WO2012148231A3 - Micro led bundle and method for manufacturing same - Google Patents

Micro led bundle and method for manufacturing same Download PDF

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Publication number
WO2012148231A3
WO2012148231A3 PCT/KR2012/003319 KR2012003319W WO2012148231A3 WO 2012148231 A3 WO2012148231 A3 WO 2012148231A3 KR 2012003319 W KR2012003319 W KR 2012003319W WO 2012148231 A3 WO2012148231 A3 WO 2012148231A3
Authority
WO
WIPO (PCT)
Prior art keywords
micro
leds
semiconductor layer
conductive semiconductor
micro led
Prior art date
Application number
PCT/KR2012/003319
Other languages
French (fr)
Korean (ko)
Other versions
WO2012148231A2 (en
Inventor
도영락
성연국
Original Assignee
국민대학교 산학협력단
피에스아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 국민대학교 산학협력단, 피에스아이 주식회사 filed Critical 국민대학교 산학협력단
Publication of WO2012148231A2 publication Critical patent/WO2012148231A2/en
Publication of WO2012148231A3 publication Critical patent/WO2012148231A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a micro LED bundle and to a method for manufacturing same, and more specifically, to a micro LED bundle, comprising: a first conductive semiconductor layer; an active layer which is formed on the first conductive semiconductor layer; and a plurality of micro LEDs having a diameter which is micro- or nano-sized and including a second conductive layer that is formed on the active layer, wherein the plurality of micro LEDs are provided with a binder on the outer circumferential surfaces thereof to form one bundle, and to a method for manufacturing the micro LED comprising the following steps: 1) sequentially forming the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, on a substrate; 2) forming the plurality of micro LEDs by etching the LEDs comprising the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer so that the diameters of the LEDs are in the nano or micro size range; and 3) forming a plurality of bundles by forming the binder on the outer circumferential surfaces of the plurality of LEDs. According to the present invention, the nano- or micro-sized micro LED can be effectively produced by combining a top-down method and a bottom-up method, and the light emitting efficiency can be improved by preventing surface defects on the micro LEDs that are produced.
PCT/KR2012/003319 2011-04-28 2012-04-27 Micro led bundle and method for manufacturing same WO2012148231A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0040175 2011-04-28
KR1020110040175A KR101209446B1 (en) 2011-04-28 2011-04-28 Micro LED device bundle and manufacturing method thereof

Publications (2)

Publication Number Publication Date
WO2012148231A2 WO2012148231A2 (en) 2012-11-01
WO2012148231A3 true WO2012148231A3 (en) 2012-12-20

Family

ID=47072953

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/003319 WO2012148231A2 (en) 2011-04-28 2012-04-27 Micro led bundle and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR101209446B1 (en)
WO (1) WO2012148231A2 (en)

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KR101713818B1 (en) 2014-11-18 2017-03-10 피에스아이 주식회사 Electrode assembly comprising nano-scale LED and method for manufacturing thereof
KR101672781B1 (en) 2014-11-18 2016-11-07 피에스아이 주식회사 Nano-scale LED for horizontal arrayed assembly, method for manufacturing thereof and horizontal arrayed assembly comprising the same
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
KR101730977B1 (en) 2016-01-14 2017-04-28 피에스아이 주식회사 Nano-scale LED electrode assembly
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
KR102707509B1 (en) * 2016-12-19 2024-09-23 삼성디스플레이 주식회사 Light emitting device and fabricating method thereof
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
KR101992342B1 (en) * 2017-01-26 2019-06-24 주식회사 엘지화학 Micro led and display device comprising the same
KR102448104B1 (en) * 2018-02-08 2022-09-29 삼성디스플레이 주식회사 Light emitting device and fabricating method thereof
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
KR102606922B1 (en) 2018-07-06 2023-11-27 삼성디스플레이 주식회사 Display device and Method of manufacturing the same
KR102557754B1 (en) * 2018-08-03 2023-07-20 삼성디스플레이 주식회사 Light emitting element, Method of manufacturing the same and Display device comprising the Light emitting element
KR102568353B1 (en) * 2018-08-16 2023-08-18 삼성디스플레이 주식회사 Light emitting element, Method of manufacturing the same and Display device comprising the Light emitting element
KR102581666B1 (en) * 2018-08-24 2023-09-22 삼성디스플레이 주식회사 Light emitting element, Display device comprising the same and Method of manufacturing the display device
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
KR102590984B1 (en) * 2018-10-30 2023-10-18 삼성디스플레이 주식회사 Light emitting element structure and method of fabricating a light emitting element
KR102651789B1 (en) * 2018-11-06 2024-03-27 삼성디스플레이 주식회사 Light emitting element structure and method of fabricating the same
KR102626452B1 (en) * 2019-01-15 2024-01-18 삼성디스플레이 주식회사 Method for fabricating light emitting diode and display device comprising the light emitting diodes
KR20200102615A (en) * 2019-02-21 2020-09-01 삼성디스플레이 주식회사 Light emitting element and display device having the same
KR102712725B1 (en) * 2019-07-10 2024-10-02 삼성디스플레이 주식회사 Light emitting element, method for fabricating the same and display device
KR20210010694A (en) * 2019-07-17 2021-01-28 삼성디스플레이 주식회사 Light emitting element, method for fabricating the same and display device
KR20210031588A (en) * 2019-09-11 2021-03-22 삼성디스플레이 주식회사 Light emitting element, method for fabricating the same and display device comprising the same
KR20210099681A (en) 2020-02-04 2021-08-13 삼성전자주식회사 Three dimension stuructured semiconductor light emitting diode and display apparatus
KR20210134103A (en) * 2020-04-29 2021-11-09 삼성디스플레이 주식회사 Light emitting element and display device comprising the same
KR20220031833A (en) * 2020-09-04 2022-03-14 삼성디스플레이 주식회사 Light emitting element and display device including the same
KR20220056898A (en) * 2020-10-28 2022-05-09 삼성디스플레이 주식회사 Light-emitting element unit and display device including the same
KR20220059847A (en) 2020-11-03 2022-05-10 삼성전자주식회사 Nanorod light emitting device, method of manufacturing the same, and display apparatus including the same
KR102532677B1 (en) * 2021-02-05 2023-05-17 전북대학교산학협력단 Micro LED array body, manufacturing method thereof and Micro LED array module manufacturing method
CN114005912B (en) * 2021-10-29 2023-08-11 嘉兴学院 Oval nano rod, preparation method of light-emitting diode and display device
KR102628266B1 (en) * 2021-12-20 2024-01-23 고려대학교 산학협력단 Led rod vertical alignment structure, and led rod vertical alignment method
KR20230130184A (en) * 2022-03-02 2023-09-12 삼성디스플레이 주식회사 Light emitting element and display device including the same

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Patent Citations (3)

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KR20110014521A (en) * 2009-08-05 2011-02-11 순천대학교 산학협력단 Light emitting diode and method for manufacturing the same
JP2011249772A (en) * 2010-05-24 2011-12-08 Lg Innotek Co Ltd Light emitting device array and light emitting device package

Also Published As

Publication number Publication date
KR101209446B1 (en) 2012-12-07
KR20120122160A (en) 2012-11-07
WO2012148231A2 (en) 2012-11-01

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