Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
  • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3642—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing a metal layer
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
  • C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/20—Conductive material dispersed in non-conductive organic material
  • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0224—Electrodes
  • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/70—Properties of coatings
  • C03C2217/73—Anti-reflective coatings with specific characteristics
  • C03C2217/734—Anti-reflective coatings with specific characteristics comprising an alternation of high and low refractive indexes
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/90—Other aspects of coatings
  • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/90—Other aspects of coatings
  • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
  • C03C2217/944—Layers comprising zinc oxide
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/90—Other aspects of coatings
  • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
  • C03C2217/948—Layers comprising indium tin oxide [ITO]
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/30—Aspects of methods for coating glass not covered above
  • C03C2218/34—Masking
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/30—Aspects of methods for coating glass not covered above
  • C03C2218/365—Coating different sides of a glass substrate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/87—Light-trapping means

Definitions

• the present invention relates to a carrier substrate intended to enter in particular into the constitution of a solar cell, and more particularly at a front electrode of a solar cell.
• the front electrode of a solar cell is that of the two electrodes which is crossed first by the light rays.
• the electrodes consist of transparent and conductive oxides (so-called TCO) such as, in particular, tin oxide doped with SnO 2: F fluorine, zinc oxide doped with aluminum ZnOiAl (called AZO), ITO (mixed tin and indium oxide).
• TCO transparent and conductive oxides
• AZO zinc oxide doped with aluminum ZnOiAl
• ITO mixed tin and indium oxide
• SnO 2 F is very stable at ambient humidity, it has the disadvantage of being reduced in the form of metallic tin when it is subjected to hydrogen plasma during the deposition operation.
• functional layers such as silicon or germanium layers.
• ITO layers have the same disadvantage.
• ZnO Al which is very stable under hydrogen plasma corrodes rapidly after the texturing step, under the effect of humidity which causes serious problems when storing the glass product.
• AZO it is known that, to be conductive, its layers must be in the crystallized state, which has the disadvantage of requiring either an annealing operation of the magnetron-deposited layers at ambient temperature, a constituent operation. an additional step increasing the cost of the operation, ie a high temperature deposit which makes the deposition process more complex and more expensive.
• TCOs such as AZO or ITO nanotexturing
• the object of the present invention is to propose a carrier substrate for a solar cell which makes it possible to avoid the abovementioned disadvantages and for which the electrode is able to perform its function of electrical conduction both in the entire visible spectrum and the near infrared, which, moreover, is insensitive to the hydrogen plasma as well as to the humidity of the ambient atmosphere, and whose constitution is such that it makes it possible to ensure a decoupling of the conduction function provided by the electrode other functions of it, giving the designer a greater freedom of choice in the materials used.
• the subject of the present invention is therefore a carrier substrate, comprising a substrate, in particular with a glass function, transparent at least in the visible and near-infrared domains and receiving a conductive electrode that is transparent at least in the visible and near-infrared domains.
• this electrode carrier substrate being intended to constitute, in combination with functional elements, a solar cell, this carrier substrate being such that: the electrode comprises one, preferably consists of a microgrid of conductive material with openings of submillimetric dimensions, - this microgrid is in contact with a coating at least slightly conductive and anti-reflective with respect to that of the functional elements with which it is intended to be in contact.
• the present invention overcomes the various disadvantages mentioned above, it will be noted that, due to the high conductivity of its electrode relative to that of the electrodes using metal oxides, the antireflection layer that it supports may only have reduced conductivity. Indeed, the present invention makes it possible to perform a decoupling, in other words a separation of the electrical conduction function provided by the electrode before the other functions assigned to it. The designer of solar cells will thus have an improved latitude of choice of materials and their arrangement in the constitution of the latter.
• the present invention thus allows the designer to use other types of absorbers than those usually used together with electrodes using metal oxides, thus allowing in particular to extend the field of photovoltaic conversion to near infrared.
• the invention makes it possible to achieve a good compromise between the transmission of radiation through the carrier substrate, at least in the visible and near infrared domains, and the conductivity of the electrode of the carrier substrate. This results in an improved photovoltaic efficiency of a solar cell in which the carrier substrate according to the invention is integrated in the front face, thanks to both good radiation transmission to the absorber elements of the solar cell in the range of lengths. Useful waveforms for these elements, and optimal charge collection from the absorber elements resulting from the conductivity of both the antireflection coating and the electrode.
• the grid may advantageously consist of a metal or a metal alloy, including silver or gold.
• the grid will comprise a stack of thin layers comprising at least a first metal layer and two dielectric material-based coatings located one below and the other above the first metal layer, and a protective metal layer placed immediately above and in contact with the first metal layer.
• the openings of the microgrid will preferably be aperiodic in at least one direction.
• the distribution of said openings of sub-millimeter dimensions will also preferably be of random type.
• the antireflection coating may consist of a stack of at least two thin layers of dielectric material whose refractive indices of the layers respectively in contact with the glass substrate and intended to be in contact with the functional element will have refractive indices close to the refractive indices of the latter.
• the stack of the antireflection coating may also consist of at least three thin layers whose refractive indices are alternately strong and weak.
• the layer of the antireflection stack in contact with the substrate will be based on mixed oxides, nitrides or oxynitride based on silicon (Si), tin (Sn), zinc (Zn), alone or in a mixture and optionally doped (fluorine, aluminum, antimony) and the layer in contact with the functional stack will be based on at least one conductive transparent oxide selected from among others titanium oxide (TiO2), zinc oxide (ZnO) , tin oxide (SnO2), mixed tin - zinc oxide (SnZnO), tin - indium oxide (ITO), mixed zinc - indium oxide (IZO), mixed zinc oxide indium and gallium (IZGO), optionally doped with Nb, Ta, Al, Sb, F.
• the first layers in contact with the substrate will have a barrier layer functionality with respect to the alkali of the substrate.
• the substrate may comprise, on its outer face, an antireflection layer.
• the resistivity of the layers of the antireflection coating is less than or equal to 500 mOhm.cm, preferably less than or equal to 50 mOhm.cm, and in particular between 0.1 and 50 mOhm.cm (inclusive), preferably between 5 and 50 mOhm.cm (limits included).
• the metal grid may be covered with an overblocking element.
• the antireflection layer which is intended to be at the interface of the functional element and the antireflection is weakly doped or undoped in order to adapt its output work to the material of the invention.
• this layer consists of a highly doped transparent conductive oxide (TCO) with a thickness preferably between 5 and 10 nanometers.
• the present invention also relates to a solar cell incorporating a carrier substrate as described above, and the use of a carrier substrate as described above to form a solar cell.
• a subject of the present invention is a method for manufacturing a carrier substrate as described above, characterized in that it comprises the steps of: depositing on the substrate a mask layer from a solution of particles colloidal agents stabilized and dispersed in a solvent,
• the coating at least slightly conductive and anti-reflective with respect to that of the functional elements with which it is intended to be in contact.
• the substrate on which the mask layer is deposited is provided on its outer face with an antireflection coating.
• FIG. 1 is a diagrammatic view in vertical section of a first example of implementation of a solar cell using a carrier substrate according to the present invention
• FIG. 2 is a representative curve of the optical spectra in transmission and absorption of a carrier substrate, respectively according to the invention and according to the prior art, namely in which the front electrode implements a TCO,
• FIG. 3 is a diagrammatic view in vertical section of an alternative embodiment of the solar cell shown in FIG. 1;
• FIG. 4 is a representative curve of the optical spectra in reflection of a carrier substrate according to the prior state of the art (curve d), and of a carrier substrate according to the invention whose antireflection coating is respectively of monolayer type ( curve b), bilayer type (curve c) and three-layer type with external antireflection layer (curve a).
• Figure 1 An example of implementation of a carrier substrate 1 according to the invention applied to the realization of a solar cell.
• This carrier substrate 1 thus comprises a substrate 2, preferably consisting of an extra-clear glass with a very low content of iron oxide (s), for example of the type marketed in the "DIAMANT" range by the company Saint-Laurent. Gobain Glazing, on the inner side of which is deposited a layer of a fastening element 3 with respect to silver and consisting in particular of Si 3 N 4 .
• An electrode is then deposited on this assembly which is capable, in known manner, of possessing qualities of both conductivity and transparency.
• this electrode consists of a conductive microgrid 4, in particular a metallic micrometer, with submillimeter-sized openings and aperiodic disposition in at least one direction.
• the strands of the microgrid 4 are of submillimetric dimensions, preferably of the order of a few hundred nanometers to a few tens of micrometers.
• the microgrid 4 is arranged, or distributed, on the substrate 2 so that it is transparent at least in the visible and near infrared domains.
• this microgrid 4 is obtained according to the teaching of patent application WO-A-2008/132397 (PCT / FR2008 / 050505). More specifically, in a first step, a mask is first formed on the layer 3 covering the substrate 2 by depositing thereon one or more layers obtained from a solution of stabilized and dispersed colloidal particles. in a solvent, then drying this mask.
• the drying causes a contraction of the layer of the latter and a friction of the nanoparticles at the level of the surface inducing a tensile stress in the layer which, by relaxation, forms interstices which constitute a two-dimensional network with a substantially straight edge and whose mesh is random, and aperiodic in at least one direction.
• the deposition is carried out in the interstices of the mask, typically by physical vapor deposition and in particular by cathodic sputtering or evaporation, of an electrically conductive gate material, and in particular based on a metal such as the silver, until filling at least a fraction of the depth of the interstices, then removing the mask layer, until revealing the grid based on the conductive gate material used.
• use is preferably made of silver, but it would be possible, of course, to use (at least) a layer of any other metal or metal alloys having good characteristics of conductivity, such as in particular gold.
• the grid 4 comprises a stack of thin layers comprising at least a first metal layer and two coatings based on oxides, transparent conductive oxides and dielectrics situated one below and the other above. of the first metal layer, as well as a protective metal layer placed immediately above and in contact with the first metal layer.
• exemplary embodiments of this stacking structure can be found in the following patent applications: EP 718 250, EP 847 965, EP 1 366 001, EP 1 412 300, EP 1 151 480 or EP 722 913, or quenchable stacks comprising at least 3 silver layers, as described in patent application EP 1 689 690.
• the thicknesses of the constituent layers of said pattern for a tri-layer stack are preferably given below, preferably : ZnO / Ag / ... ZnO / Si 3 N 4 ⁇ 7 to 15/10 to 17 / ... 7 to 15/25 to 65, nm) and preferably: ZnO / Ag / Ti / ZnO / Si 3 N 4
• the thicknesses of the layers constituting said pattern for a four-layer stack are preferably: ZnO / Ag / ... ZnO / Si 3 N 4 (7 to 15/7 to 15 / ... 7 to 15 / 23 to 65 nm) and preferably: ZnO / Ag / Ti / ZnO / Si 3 N 4
• the metal gate 4, constituting the front electrode of the carrier substrate, is then covered with an antireflection element which may be of the monolayer type, or, preferably, a stack of interference layers, constituted by transparent materials in the field of wavelengths, particularly in the visible and near infrared domains, at least in a wavelength range extending from 400 to 1100 nm.
• the antireflection coating is present at least at the openings of the microgrid, inside and / or above these openings. In one embodiment, advantageous from the point of view of the ease of manufacture of the carrier substrate, the antireflection coating covers the entire microgrid.
• the layer or layers of the antireflection element are intended to perform two functions, namely, on the one hand, to reduce the reflection at the interface with the layer of the functional element 7 with which it is in contact (in particular silicon or germanium or CdTe) and with the substrate 2 and, on the other hand, provide protection of the glass assembly against the hydrogen plasma during the step of depositing silicon or germanium and against the humidity of the ambient air.
• the stack of interference layers consists of thin layers made of slightly conductive materials, namely semiconductors such as for example slightly doped TCOs, in particular of the oxide or nitride type, whose refractive indices are alternately strong and weak.
• semiconductors such as for example slightly doped TCOs, in particular of the oxide or nitride type, whose refractive indices are alternately strong and weak.
• Such a stack may be of the type described in application WO 01/94989.
• the determination of the number, the thickness, and the indices of the intermediate layers is the knowledge of the skilled person who has at his disposal methods and software to ensure an optimization of these different parameters.
• the conductive microgrid, transparent, submillimeter-sized openings, optionally aperiodic disposition in at least one direction and random can be obtained by any other method than that described above.
• FIG. 2 shows the transmission spectrum of a carrier substrate according to the invention (curve a) and, for comparison, the transmission spectrum of a carrier substrate of the same type whose electrode consists of known way from tin oxide doped with SnO 2: F fluorine (curve b).
• curve a the transmission spectrum of a carrier substrate of the same type whose electrode consists of known way from tin oxide doped with SnO 2: F fluorine
• FIG. 2 also shows, respectively, the absorption spectra of these two carrier substrates, (curve c: absorption of the carrier substrate according to the invention and absorption curve of a carrier substrate of the same type whose electrode is formed in a known manner from tin oxide doped with SnO 2 : F), that the absorption of the carrier substrate according to the invention is much lower than that of reference substrate throughout the visible spectrum as well as in the near infrared.
• a carrier substrate whose antireflection is monolayer type and comprises niobium doped titanium dioxide TiO 2: Nb with a doping rate of 0.5% to 10%. % so as to make it weakly conductive and to avoid absorption in the near-infrared range.
• the thickness of this monolayer was determined at 60 nm by calculation. This gave a refractive index of this monolayer of 2.4.
• FIG. 4 (curve b) shows the reflection spectrum of such a carrier substrate on which a silicon layer has been deposited in order to simulate the active layer of a solar cell.
• This layer is doped with fluorine with a degree of 0, 1% so as to make it weakly conductive.
• Nb niobium TiO 2
• the respective thicknesses of the first and second layers of this antireflection stack have been determined in a known manner by the calculation at values of 70 nm and 40 nm respectively.
• FIG. 4 (curve c) shows the reflection spectrum of a carrier substrate according to the invention provided with such an antireflection bilayer, on which, as previously, a silicon layer has been deposited.
• a carrier substrate has been formed whose antireflection is formed of a three-layer stack whose end layers are respectively in contact with the substrate 2 and the silicon layer 7 and are same nature as in the previous example. Between these layers is a layer of tin dioxide doped with SnO2: F fluorine. The thicknesses of these three layers were determined in a known manner by calculation and are respectively from the first to the third of: 155 nm, 40 nm and 55 nm. As before the third layer is covered with a layer of silicon. As shown in FIG. 3, the substrate 2 is different from that used previously in that it has itself received an antireflection coating 8. The reflection spectrum of such a carrier substrate is represented on the curve a of FIG. Figure 4.
• the present invention allows a gain in light transmission both in the visible and near-infrared domains.
• This gain can reach, in the case of the embodiment shown in curve a, a rate of 10% in the visible range and 15% in the near-infrared range.
• the layer at the interface of the absorber and the anti-reflection is weakly doped or undoped in order to adapt its output work to the material of the functional layer.
• the slightly doped layer in contact with the Si is Al doped ZnO
• the layer to adapt the output work will be an undoped or slightly doped TiO 2 layer of a few nm.
• the last layer of the antireflection stack located at the interface with the absorber material will be textured to improve the antireflection effect.
• the present invention is thus particularly interesting for use in all applications where it is important to have a carrier substrate capable of optimizing transmission and reducing the absorption in the visible and near-infrared range and of which the electrode has sufficient intrinsic conductivity to release an antireflection layer disposed thereon of any constraint as to conductivity.
• the antireflection coating is semiconductor and in contact with both the conductive microgrid and with the absorber element of the solar cell in front of which the carrier substrate is integrated.
• the antireflection coating which is semiconductor, is able to collect the charges from the absorber element in the direction of the conductive microgrid.
• the antireflection coating in contact with the microgrid and intended to be in contact with the functional element of a solar cell equipped with the carrier substrate, which is semiconductive, the carrier substrate which may comprise other layers between the glass function substrate and the semiconductor layer of the antireflection coating.
• the carrier substrate which may comprise other layers between the glass function substrate and the semiconductor layer of the antireflection coating.
• This or these other layers may be arranged under the microgrid or housed in the openings of the microgrid, and are preferably also semiconductors.

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