EP2214210A3 - Eine Wafer-Ebenen-Verpackung verwendender Lichtsensor - Google Patents
Eine Wafer-Ebenen-Verpackung verwendender Lichtsensor Download PDFInfo
- Publication number
- EP2214210A3 EP2214210A3 EP20100000334 EP10000334A EP2214210A3 EP 2214210 A3 EP2214210 A3 EP 2214210A3 EP 20100000334 EP20100000334 EP 20100000334 EP 10000334 A EP10000334 A EP 10000334A EP 2214210 A3 EP2214210 A3 EP 2214210A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- wafer
- present
- sensors
- light sensor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Light Receiving Elements (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/361,426 US8405115B2 (en) | 2009-01-28 | 2009-01-28 | Light sensor using wafer-level packaging |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2214210A2 EP2214210A2 (de) | 2010-08-04 |
EP2214210A3 true EP2214210A3 (de) | 2013-04-10 |
EP2214210B1 EP2214210B1 (de) | 2017-03-15 |
Family
ID=42224320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10000334.2A Active EP2214210B1 (de) | 2009-01-28 | 2010-01-15 | Eine Wafer-Ebenen-Verpackung verwendender Lichtsensor |
Country Status (3)
Country | Link |
---|---|
US (1) | US8405115B2 (de) |
EP (1) | EP2214210B1 (de) |
CN (2) | CN101882625A (de) |
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US8773018B2 (en) * | 2011-01-25 | 2014-07-08 | Paul F. Hensley | Tuning a dielectric barrier discharge cleaning system |
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US8624341B2 (en) | 2011-01-26 | 2014-01-07 | Maxim Integrated Products, Inc. | Light sensor having IR cut and color pass interference filter integrated on-chip |
US8598672B2 (en) | 2011-01-26 | 2013-12-03 | Maxim Integrated Products, Inc | Light sensor having IR cut interference filter with color filter integrated on-chip |
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US9640683B2 (en) | 2013-11-07 | 2017-05-02 | Xintec Inc. | Electrical contact structure with a redistribution layer connected to a stud |
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US9984888B2 (en) * | 2014-08-13 | 2018-05-29 | Newport Fab, Llc | Method of fabricating a semiconductor wafer including a through substrate via (TSV) and a stepped support ring on a back side of the wafer |
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US9898645B2 (en) | 2015-11-17 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fingerprint sensor device and method |
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Also Published As
Publication number | Publication date |
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US8405115B2 (en) | 2013-03-26 |
EP2214210A2 (de) | 2010-08-04 |
US20100187557A1 (en) | 2010-07-29 |
EP2214210B1 (de) | 2017-03-15 |
CN105185795B (zh) | 2018-10-09 |
CN101882625A (zh) | 2010-11-10 |
CN105185795A (zh) | 2015-12-23 |
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