Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
  • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
  • B23K20/023—Thermo-compression bonding
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
  • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
  • B23K20/227—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded with ferrous layer
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45572—Cooled nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/04—Tubular or hollow articles
  • B23K2101/045—Hollow panels
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/18—Sheet panels
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2103/00—Materials to be soldered, welded or cut
  • B23K2103/02—Iron or ferrous alloys
  • B23K2103/04—Steel or steel alloys
  • B23K2103/05—Stainless steel

Definitions

• the invention relates to a gas distributor for a CVD reactor with two or five chambers, each lead into the feed lines, wherein at least one of the chambers forms a gas volume and connected by a plurality of at least one other chamber crossing tube with the bottom of the gas distributor associated gas outlet openings is.
• the invention further relates to a method for manufacturing such a gas distributor s.
• the plates have a vertical distance from each other, which form the bottom and the ceiling of each chamber.
• the edges of the chambers are formed by annular edge parts made of steel.
• the downwardly facing bottom of the gas distributor has a plurality of gas outlet openings.
• the overlying chamber is
• a cooling chamber which is traversed by a liquid coolant, such as water.
• a liquid coolant such as water.
• Each of the gas volumes is connected to the bottom of the gas manifold with a plurality of up to more than 15,000 tubes.
• the tubes open in the gas outlet openings and cross
• EP 1 381 078 A1 and US Pat. No. 6,444,042 B1 disclose gas inlet manifolds which are sandwiched by a plurality of disks, wherein the individual disks are structured so that a gas distribution can take place within the disk plane.
• cross and transverse channels are provided. They form block-like elevations, which have a central opening through which a gas can flow and which can be flowed around by another gas.
• the invention has for its object to provide a simplified to manufacture and improved gas distributor.
• the gas distributor consists of a plurality of structured, successive disks, which are connected to one another and in particular are diffusion welded together by pressure and temperature.
• the tubes can be formed by a majority of these discs.
• the tubes are then formed from a plurality of superimposed annular discs, the annular discs are substantially congruent to each other.
• the tubes are built from these discs.
• the disks are preferably made of stainless steel and have, in the area of the free spaces or openings formed by them, the said annular disks which are connected to one another via webs.
• the superimposed annular disks then form the tubes in the welded state, which intersect the corresponding chamber.
• the chamber volume is formed by the spaces between the webs.
• the webs In order to ensure improved flow through the chambers with their associated fluids, such as a gas or a liquid, the webs have a lower material thickness than the discs themselves or the tubes forming annular discs.
• the material thickness of the discs can be between 0.2mm and 2mm. Preferably, the material thickness is in the range between 0.3mm and 1mm.
• the webs Based on the He stretching plane of the individual discs, the webs have a material thickness which is less than the outer diameter of the annular discs.
• the annular discs can have a circular outline contour. The outline contour of the annular discs can also deviate from it. Measures are provided so that the preferably substantially congruent superposed webs are permeable to gas.
• the webs of interconnected discs form gas-permeable walls.
• the gas distributor according to the invention consists of a plurality of differently shaped discs, as is also the case in the prior art.
• each axial zone of the gas distributor is formed from a multiplicity of identically designed disks which are merely stacked for production, whereby differently shaped disks can alternate with one another.
• the inner diameter of the tubes, so the flow channels, can be 0.4mm to 1mm.
• the surface density of the tubes or the surface density of the gas outlet openings can be between 10 and 20 per cm 2 .
• the additionally claimed method makes it possible to produce a gas distributor with a diameter of at least 180 mm.
• the diameter can also be at least 380mm or at least 500mm. It is even possible to produce gas distributors with diameters of more than 700mm.
• the gas distributor has a total of two gas volumes. One of these gas volumes can be made of a solid component.
• the other gas volume may be part of the diffusion-welded plate structure.
• the diffusion-welded plate structure may further comprise the above-mentioned cooling chamber crossed by tubes connecting both gas volumes separately from each other with the gas outlets of the bottom of the gas distributor.
• plates alternate in the area of a chamber in which the annular discs lie in the center of the bridge of intersecting webs and in which the annular discs lie on the intersection points of intersecting webs.
• the invention also relates to a method for manufacturing such a gas distributor.
• the manufacturing method essentially relates to the plate structure of the gas distributor, which is formed by a plurality of structured discs of metal, preferably stainless steel. These are each made of sheet metal forms. The sheets are first cut or punched to their outer shape. Then the slices are structured. As far as the discs are arranged between individual chambers, they only have holes.
• the discs which form a chamber have a web structure, wherein the webs connect the annular discs with each other. This web structure can be produced by an etching process.
• the cut to contour sheets are first masked photolithographically. In this case, a photosensitive photoresist is first applied over a large area to the broad side surface of the plate.
• the unexposed or exposed zones of the photoresist layer are removed again. After that, the areas freed from the photoresist are etched. Preferably, an anisotropic etching process is used. In a second etching process in which only the annular disc surfaces and the edge are masked, the material thickness of the webs can be reduced. The so structured plates are superimposed so that the washers complement each other to tubes and the chambers of broad side surfaces have only holes. Finally, the plate stack is compressed in an oven and brought to a temperature which is slightly below the melting temperature of the metal, especially stainless steel. The plate stack is exposed to this pressure and this temperature until the overlapping broad surfaces have intimately bonded to one another.
• each plate in the form of an edge projection has a marking tab on which a label is attached.
• the plates which essentially have a circular outline, can moreover have adjusting tabs projecting from their edge and having adjusting openings.
• An adjusting device can have a plurality of adjusting pins, via which the adjusting straps can be placed such that the adjusting pins protrude through the adjusting openings.
• Figure 1 upside down a gas distributor in perspective view
• Figure 2 is a section along the line II - II in Figure 1, in which the zones A, B, C, D, E of the gas distributor are shown.
• Fig. 2a is an enlarged detail of Fig. 2;
• Fig. 3 is a plan view of a, the zone A forming disc 3;
• Fig. 4 is a plan view of a first, the zone B forming disc 4;
• FIG. 4b shows a section along the line IVb-IVb in FIG. 4a;
• Fig. 5 is a plan view of a second, the zone B forming disc 4 1 ;
• FIG. 5a shows an enlarged section of the grid structure of the pane according to FIG. 5;
• Fig. 6 is a plan view of a disc 5 of the zones C, E;
• Fig. 7 is a plan view of a disc 6 of the zone D;
• FIG. 7 a shows an enlarged section of the grid structure of the pane 6 and 7 illustrated in FIG Fig. 8 is a plan view of a stacked by the discs 3, 4, 5, 6 formed disc package, which is fixed by means of adjusting pin 24 and adjusted in the direction of the bottom 2 1 .
• the exemplary embodiment relates to a gas distributor for a CVD reactor.
• the use of such a gas distributor is described in particular in EP 0 687 749 A1.
• the gas distributor is part of a CVD reactor and is located vertically above a susceptor for receiving substrates to be coated. The substrates rest on a horizontal surface of the susceptor. Above the susceptor is the so-called process chamber into which the process gases are introduced from the bottom 2 1 of the gas distributor 1, 2.
• the process gases contain components that form a layer to be deposited on the substrate.
• the process gases may contain aerosols which merely condense on the substrates.
• the susceptor is cooled.
• the process gases may also contain reaction gases which decompose in a heated process chamber, the decomposition products then growing in layers on the substrate.
• the bottom surface of the gas distributor can also be cooled by means of a cooling medium flowing through a cooling chamber 14. If the susceptor carrying one or more substrates is heated in this configuration, the reaction gases emerging from the outlet openings can flow or diffuse almost undressed into the region of the surface, in order to decompose pyrolytically there during surface contact. Here, too, the layer builds up on the substrates from the decomposition products of the reaction gases.
• the process chamber is encapsulated in a reactor housing, which is gas and pressure tight against the environment. is closing.
• the reaction gases or aerosols are fed from outside the reactor by means of supply lines to the gas distributor. If different process gases or aerosols are used, then each process gas or each aerosol can be assigned its own chamber in the form of a gas volume 8, 9.
• FIG. 2 shows in cross section, standing upside down the structure of such a gas distributor s.
• the gas distributor consists of an upper part 1 formed by an optional, solid plate, which forms a first gas volume 8 in the form of a recess.
• the gas volume 8 is closed by the broad side of a gas distributor lower part 2.
• This broad side of the gas distributor lower part is connected by means of a plurality, for example, 10,000 to 20,000 gas outlet channels 7 with the bottom 2 1 of the gas distributor. There open the gas outlet channels 7 in outlet openings 23rd
• the gas distributor 2 also has a second gas volume 9, which is fed with separate supply lines. This gas volume 9 is crossed by tubes 11, which form the gas outlet channel 7 of the upper gas volume 8.
• the gas distributor lower part 2 moreover has a bottom chamber 2 1 adjacent cooling chamber 14, which is also crossed by tubes 12, 13, wherein the tubes 12, 13 on the one hand the gas outlet channel 7 of the volume 8 and on the other the gas outlet channel 10 of the gas volume 9.
• the lower gas part 2 is formed by a plurality of approximately 1 mm thick, structured disks 3, 4, 5, 6, which are first patterned in a corresponding manner, then stacked on one another and finally diffusion welded together under pressure and temperature.
• the disk structure illustrated in FIGS. 2 and 2a consists of five differently structured disks 3, 4, 4, 1 , 5 and 6. With these disks, the zones A, B, C, D, E shown in FIG. 2 are formed.
• the zone A is formed by a plurality of disks 3, which are shown in FIG. It is a circular disc having a plurality of uniformly arranged openings 7, which have a diameter between 0.4mm and 1mm.
• the area density of these gas outlet channels 7 can be between 10 and 20 per cm 2 .
• the openings can be drilled.
• the openings are etched.
• the entire broad side surface of the disc 3 is coated with a photoresist.
• the unexposed or exposed photoresist is removed and the openings are etched.
• Figures 4, 4a show the top view of a disc 4 of zone B.
• the disc has a solid, continuous edge and within the edge with webs 15 interconnected annular discs 16.
• the annular discs 16 have a central opening, which is associated with the gas outlet channel 7 are.
• the annular discs 16 are located at the middle of the bridge, the bars 15 crossing each other. From Figure 4b it can be seen that the webs 15 have a relation to the annular discs 16 reduced material thickness.
• Figures 5, 5b show the top view of a variant of a slice 4 1 of the zone B, which can be arranged alternately with a disc 4.
• the annular discs 16 are located at the intersections of the intersecting webs 15.
• the webs 15 of the disc 4 1 extend diagonally to the webs of the disc 4. Again, the webs 15 have a reduced material thickness.
• the disks 4, 4 1 like the disk 3 or the disks 5 and 6 to be explained below, can be patterned by etching, the web-ring disk structure also being produced photolithographically here, and then the unmasked region of the disks being etched away anisotropically.
• FIG. 6 shows a disk 5 with which zones C and E can be formed by the juxtaposition of several disks.
• the disc differs from the disc 3 essentially only by a twice as high number of openings.
• FIGS. 7, 7a show a disk 5 associated with the zone D, which has a structure similar to the disks 4, 4 1 already discussed above.
• the number of annular discs 17, 18 is twice as large, since they the channels of the two outlet channels 7, 10 forms.
• the web intermediate zones between the webs 15, 15 ' form the volumes, wherein the space between the webs 15 forms a gas volume 9 and the space between the webs 15' a cooling water chamber 14. Because of the reduced material thickness of the webs 15, 15 'are the individual Bridge interstices fluidly connected to each other.
• the discs 3, 4, 4 1 , 5 and 6 each form from its edge projecting, arranged in a uniform angular distribution centering tabs 20 from. These centering tabs 20 are connected to the edge of the disc 3, 4, 4 1 , 5, 6 with perforated webs.
• An adjusting device is provided which forms four adjusting pins 24, which run parallel to one another and whose diameter corresponds to the inner diameter of the adjusting openings 21.
• FIG. 8 shows a stack of discs placed one on top of the other, wherein the respective adjusting straps 20 are slipped over the adjusting pins 24.
• Each of the Zones A, B, C, D and E associated disc 3, 4, 4 1 , 5 and 6 has at its edge beyond an identification tab 26 on which a label is, so that the plates can not be confused.
• the identification tabs 22 of the different zones, A, B, C, D, E assigned discs are also attached to different angular positions.
• the broad side surfaces of adjacent plates touch.
• This plate stack is then pressurized in an oven.
• the broad side surfaces of the disks 3, 4, 4 1 , 5, 6 are pressed against one another at about 1.5 MPa.
• the disk stack is heated to a temperature slightly below the melting temperature of the metal from which the disks are made.
• a preferred temperature is 1100 ° C.
• the plate stack is treated under vacuum or in a protective gas atmosphere until the superimposed broad side sections of the individual discs 3, 4, 4 1 , 5, 6 intimately connected, so that a solid structured solid is formed, which is the gas distributor base 2 trains.
• the treatment time can be about 4 hours.
• the treatment temperature is increased by 50 ° during the treatment.
• the treatment temperature can be in a window between 1000 and 1200 ° C.
• connection of the gas distributor lower part 2 with the gas distributor upper part 1 can be effected by conventional welding.
• the gas distributor upper part 1 is also formed by a part of a wall of a reactor housing, as shown, for example, by FIG. 2 of EP 0 687 749 A1. Moreover, it is also possible to produce the gas distributor according to the invention without a solid upper part 1.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Chemical Vapour Deposition (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)

Applications Claiming Priority (2)

Publications (2)

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Family Applications (1)

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• 2007
  • 2007-06-06 DE DE102007026349A patent/DE102007026349A1/de not_active Withdrawn
• 2008
  • 2008-06-04 AT AT08760456T patent/ATE551145T1/de active
  • 2008-06-04 KR KR1020107000209A patent/KR20100035157A/ko not_active Application Discontinuation
  • 2008-06-04 US US12/663,272 patent/US20100170438A1/en not_active Abandoned
  • 2008-06-04 EP EP08760456A patent/EP2167270B1/fr not_active Not-in-force
  • 2008-06-04 CN CN200880019034.8A patent/CN101678497B/zh not_active Expired - Fee Related
  • 2008-06-04 WO PCT/EP2008/056873 patent/WO2008148773A1/fr active Application Filing
  • 2008-06-06 TW TW097121046A patent/TWI503441B/zh not_active IP Right Cessation

Non-Patent Citations (1)

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