EP1979271A2 - Procédé et dispositif de préparation et de traitement de matériau de silicium - Google Patents
Procédé et dispositif de préparation et de traitement de matériau de siliciumInfo
- Publication number
- EP1979271A2 EP1979271A2 EP07711375A EP07711375A EP1979271A2 EP 1979271 A2 EP1979271 A2 EP 1979271A2 EP 07711375 A EP07711375 A EP 07711375A EP 07711375 A EP07711375 A EP 07711375A EP 1979271 A2 EP1979271 A2 EP 1979271A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon material
- conveyor
- wetting
- orientation
- process medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 146
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 138
- 238000004140 cleaning Methods 0.000 claims abstract description 64
- 238000009736 wetting Methods 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 238000000746 purification Methods 0.000 claims abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 10
- 230000001154 acute effect Effects 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
Definitions
- the invention relates to a method and a device for processing silicon material.
- Such a treatment process known from the prior art and a device suitable for carrying out the process are used for purification of silicon raw material.
- the silicon raw material which may be in the form of silicon fragments or chunks of different sizes in particular, is prepared for further processing by the processing method, for example to produce silicon wafers for semiconductor production or silicon plates for solar cell production.
- the silicon material is transported into a process chamber and treated there with one or more liquid and / or gaseous process media or process medium combinations in order to eliminate superficial contaminants such as metal residues and / or oxide layers.
- a liquid process medium can not be guaranteed that all surface areas of the silicon material are wetted with the process medium.
- residues of the liquid process medium or impurities detached from the process medium may remain on the surface of the silicon material despite a subsequent rinsing process.
- the invention has for its object to provide an aforementioned device and an aforementioned method with which problems of the prior art can be avoided and In particular, an improved cleaning effect for the silicon material can be achieved.
- a method of processing silicon material with a cleaning process comprising the steps of: wetting silicon material aligned in a first spatial orientation with a first, liquid process medium, automated change of the orientation of the silicon material by means of a turning device, wetting of the silicon material in the changed orientation with the first, liquid process medium.
- the silicon material which is present in particular in the form of irregular fragments with a typical edge length of less than 10 cm and a typical volume of less than 1000 cm 3 , that is in approximately fist-sized and smaller chunks or pieces, is first in a first spatial alignment with a first wetted liquid process medium.
- the spatial orientation of the silicon material results arbitrarily by transporting the chunks into the process chamber in which the cleaning process is carried out.
- the chunks are for example with a contact surface or with multiple contact points on a substrate and are wetted in this spatial orientation with the liquid process medium, in particular sprayed.
- the preferred takes place from several spatial directions with multiple spray nozzles, which can apply in particular sprays or spray on the silicon material is due to the contour of the individual chunks not guaranteed that all surface portions of the typically irregularly shaped fragments of silicon material are wetted with the liquid process medium.
- the orientation of the silicon material after the first wetting with process medium is advantageously automatically changed by means of a turning device, so that the silicon material now rests on another surface or other contact points on the base and thus assumes a changed spatial orientation, So different lies.
- the turning device is designed such that at least 50 percent of the silicon material undergoes a change in position of at least 20 degrees during the turning process. In a particularly preferred embodiment of the invention it is provided that at least 75 percent of the silicon material undergoes a change in position of at least 20 degrees during the turning process.
- At least two orientation changes take place during the cleaning process between at least three wetting processes.
- at least three cleaning operations that is to say with a chronological sequence of three wetting processes for the silicon material and the orientation changes respectively provided between the individual cleaning processes, it is possible with high reliability to achieve at least almost complete wetting of all outer surfaces of the silicon material with the process medium.
- wetting of the silicon material with process medium also takes place at least during one of the orientation changes.
- the orientation change which is equivalent to a relative movement of the individual chunks of the silicon material relative to the substrate, surface portions of the silicon material can be wetted with the process medium, which may be wetted with process medium in either the first or in a further spatial orientation.
- a particularly advantageous cleaning effect can be achieved with a small number of orientation changes, in particular with only one orientation change.
- a first cleaning process at least one or more, in particular similar running cleaning processes are followed by different process media, in which at least a first wetting of the silicon material with process medium, at least one orientation change of the silicon material and at least one further wetting of the silicon material are provided with process medium.
- HF hydrofluoric acid
- HCl Hydrochloric acid
- HNO 3 nitric acid
- NaOH potassium hydroxide
- oxide layers, metal ions and other contaminants can be removed from the outer surface of the silicon material.
- the substances are used in particular in an aqueous solution in order to be able to produce a defined, not too aggressive cleaning effect.
- the substances can also be mixed together and brought into aqueous solution in order to achieve a combined cleaning effect.
- a rinsing process in particular with deionized water, is carried out with a rinsing device.
- a rinsing process which can be realized with or without orientation change for the silicon material, the contaminants removed from the external surface by the process medium and also the process medium itself can be removed and thus do not hinder further purification of the silicon material in a subsequent cleaning process.
- residues of process medium of an upstream purification step in a subsequent cleaning step react undesirably with the process medium used there.
- the rinsing process can take place in the same process chamber as the cleaning process, it can also be provided that the silicon material for the rinsing process is transported into a separate rinsing chamber with dosing openings for the rinsing medium.
- an annular arrangement of spray nozzles is provided, which allows at least almost all-sided application of the flushing medium to the silicon material.
- the cleaning process or processes with a substantially continuous, in particular automated, promotion of silicon material with a substantially continuous wetting of the silicon material with process medium and with at least one orientation change for the silicon material, in particular in a cleaning chamber, be performed.
- the continuous conveyance of the silicon material means that the silicon material is moved by means of a conveying device in at least one spatial direction, thereby passing at least a first wetting device, a turning device and a second wetting device. While the wetting devices are designed for the substantially continuous delivery of process medium to the outer surface of the silicon material, the turning device is designed for a substantially continuous orientation change of the silicon material.
- the silicon material for a change of the spatial orientation is conveyed from a first conveyor to a spaced second conveyor, which is arranged below the first conveyor, so that the silicon material from the first conveyor under changing the spatial Orientation on the second conveyor falls.
- the silicon material between the conveying devices returns a path section in which, at least for a short time, it is not in contact with a base, that is, with one of the conveying devices.
- the conveyors are spaced apart in the vertical direction, ie arranged one above the other, so that the silicon material falls from the first conveyor to the second conveyor and thereby changes its spatial orientation or position.
- the orientation change can also be promoted by different speeds of the conveyor devices arranged one after the other, in particular by a higher speed of the respectively downstream conveyor device.
- a drying process for the silicon material is performed. This can prevent moisture residues of the process medium or of the flushing medium from again adhering to the outer surfaces of the silicon material soiling. In addition, in particular in the case of residues of process medium, a progression of the reaction of the respective process medium with the outer surface of the silicon can take place. silicon material can be reduced or stopped.
- the drying process is preferably provided as hot-air drying or infrared drying, in which the silicon material is transported continuously through a drying chamber in which the drying process takes place.
- an apparatus for processing silicon material in particular for carrying out the above method, which comprises at least one conveying device for conveying silicon material in at least one transport direction, with at least one turning device associated with the conveying device for changing a spatial orientation of the silicon material and each having at least one in the transport direction before the turning device and a arranged in the transport direction after the turning device wetting device for wetting the silicon material with a process medium.
- the particular automatic conveyor allows a continuous promotion of the silicon material in the at least one transport direction.
- the promotion of the silicon material can be carried out in particular along a rectilinear or curved space line.
- Automated conveying can be realized, in particular, by means of an externally powered conveyor, for example with an electromotive drive.
- the turning device can be active or passive.
- a change in orientation for the silicon material is caused by means of a cyclic or acyclic force application, for example by a gripping arm which grips the silicon material and actively alters the spatial orientation.
- a passive turning device for example, the kinetic energy already present by the transport and / or the potential positional energy of the silicon material is used for a change in orientation, whereby a structurally simple turning device can be realized.
- the conveyor has a revolving, endless conveyor belt with an upper run and a lower run, wherein the upper run is aligned at an acute angle to a horizontal and provided for the transport of the silicon material.
- the upper strand and the lower strand are formed by an endless, annular, made of flexible material, circulating belt.
- the upper run of the conveyor belt is the surface area pointing upwards away from the conveyor and movable in the transport direction, the surface normal of which is directed substantially vertically upwards.
- This surface area serves the silicon material as a base without further aids.
- the surface normal can assume an acute angle with a vertical, that is, the silicon material overcomes a difference in height during conveying.
- the conveyor belt consists of a permeable material for process medium, in particular a mesh material. This ensures that the process medium can drip onto the outer surface of the silicon material after application, without collecting between the underside of the silicon material and a substrate designed as a closed surface. This can be avoided in particular that accumulate on the underside of the silicon material removed from the process medium impurities.
- a wetting device for process medium arranged below the upper strand, it is also possible for the underside of the silicon material to be wetted by spray jets directed essentially vertically upwards. Due to the permeable design of the conveyor belt can thus both an accumulation of impurities on the underside the silicon material as well as an advantageous wetting of the underside of the silicon material can be effected.
- a turning device at least one, arranged at an acute angle to the transport direction, orthogonal and adjacent to a surface of the upper run oriented guide rail is formed for a change in orientation of the silicon material.
- This is a passive turning device which, in the manner of a baffle, exerts a force directed essentially perpendicularly to the transport direction on the silicon material and can thus bring about a change in orientation.
- the guide rail is arranged adjacent to a surface of the upper strand, so that it can detect at least almost all lying on the upper strand chunks of silicon material.
- the guide rail has a deflection surface which occupies an acute angle with the transport direction and whose surface normal is oriented substantially horizontally.
- the turning device formed by an arrangement of at least two, in particular in the transport direction overlapping arranged conveyor belts is to effect a change of orientation.
- the at least two conveyor belts may in particular be arranged at a distance from one another, so that the silicon material covers a free path section between the conveyor belts, in which it is not in contact, at least for a short time, with a support, that is with one of the conveyors.
- the silicon material moves away from the first conveyor belt and impinges on the second conveyor belt, causing the desired orientation change.
- the conveyor belts are spaced apart in the vertical direction, so that the silicon material from the first conveyor belt falls in at least almost free fall on the second conveyor belt and thereby changes its spatial orientation.
- the orientation change can also be promoted by different speeds of the successively arranged conveyor belts, in particular by a higher speed of the downstream conveyor belt.
- the successive conveyor belts are aligned at an angle to each other, that is, that the transport directions are different, especially in opposite directions, are selected.
- the at least one automatic conveying device, at least one turning device and at least two wetting devices are accommodated in an at least almost complete cleaning chamber in order to prevent the escape of process medium.
- the typically aggressive process medium can also be applied to the silicon material with great pressure, in particular it can be nebulized.
- an advantageous cleaning effect can be achieved without an environment being exposed to the process medium.
- a sealing device provided in particular in the form of flexible strips of material and / or in the form of an air or water curtain, with which a leakage of atomized process medium from the cleaning chamber can be almost completely prevented.
- a flushing device is integrated into the cleaning chamber. In this way, a completely integrated wet-chemical cleaning of the silicon material with a process medium and immediately downstream rinsing process in a cleaning chamber can be realized.
- the flushing device is designed as a separate flushing module and arranged in the transport direction behind the cleaning chamber. This allows the separate processing of the process medium and the flushing medium, which can be collected in the separate modules, so that in each case a specific adapted treatment of the respective media can be made. In addition, in such an arrangement of cleaning chamber and purging the respective running cleaning and purging processes do not influence each other in an undesirable manner.
- the rinsing device, a drying device and the cleaning chamber are modular and in any order coupled to each other. In this way, a freely definable sequence of cleaning processes with different process media and optionally rinsing and / or drying processes provided therebetween can be realized. This allows an advantageous adaptation to different cleaning requirements for the silicon material to be reprocessed.
- the conveyor are associated with a receiving station and / or a dispensing station, which are formed for a supply and / or removal of the silicon material.
- the receiving station and the discharge station can be designed as conveyor belts and allow a continuous transport of the silicon material into the at least one cleaning chamber and a removal of the treated silicon material from the cleaning chamber or the downstream rinsing device or the drying device.
- Fig. 1 is a schematic representation of a cleaning chamber with a downstream purging device and a plurality of conveyor belts designed as conveyors.
- a device 1 for the preparation of silicon material 3 has a plurality of successive sections overlapping in the vertical direction arranged automatic conveyors, which are designed as conveyor belts 2.1 to 2.7 and which are provided for the promotion of silicon material 3 in at least one transport direction 4.
- the silicon material 3 can be conveyed through a cleaning chamber 5 and a downstream rinsing chamber 6 and supplied with process medium 7 and with rinsing medium 8.
- a first conveyor belt 2.1 is designed as a receiving station and is provided for the transport of the silicon material 3 in the cleaning chamber 5.
- the first conveyor belt 2.1 is arranged in the vertical direction above and overlapping a second conveyor belt 2.2 so that silicon material 3 can fall from the first conveyor belt 2.1 along a short free fall path to the second conveyor belt 2.2. It is common to all conveyor belts 2.1 to 2.7 that the silicon material 3 can be conveyed on a surface of an upper run 9 of a flexible, mesh-like and thus liquid-permeable belt 10 facing away from the conveyor belt 2.1 to 2.7.
- a surface normal 11 of the surface of the upper strand 9 is aligned at least substantially in the vertical direction 14, so that a transport of the silicon material 3 in at least predominantly horizontal direction can take place through the circulating belt 10.
- the conveyor belts 2.2 to 2.6 are aligned parallel to each other and the surface normals 11 take an acute angle with the vertical 14 a For example, an angle of 5 degrees to 30 degrees.
- the second conveyor belt 2.2 as well as the other conveyor belts 2.3 and 2.4 are each assigned a wetting device.
- the wetting arrangements designed as spray nozzle arrangements 12 which are partly in the vertical direction above the upper run 9 and partially are arranged in the vertical direction below the upper run 9, an at least almost all-round wetting of the silicon material 3 can be made with a process medium 7.
- the process medium 7 is supplied to the spray nozzle assemblies 12 via medium lines 13, discharged by means of pressurization through nozzle orifices not shown in detail as a misted spray cone in the direction of the upper strand 9 and thus in the direction of the silicon material 3 and sprayed onto the silicon material 3.
- the spray nozzle assemblies 12 are respectively associated with the conveyor belts 2.2, 2.3 and 2.4, wherein the spray cone of the spray nozzle devices 12 also detects the end regions of the conveyor belts 2.2 and 2.3. This ensures that the silicon material 3 is also wetted with process medium 7 during the orientation changes caused by the cascade-like arrangement of the conveyor belts.
- Excess process medium 7 and provided with detached contaminants of the silicon material process medium 7 can drip down in the vertical direction and thus be included in a collection or treatment tank not shown in detail for disposal or treatment of the spent process medium 7.
- the spray nozzle arrangements 12 are provided for a continuous delivery of process medium 7, so that the silicon material conveyed on the conveyor belts 2.2 to 2.4 is likewise exposed to a virtually continuous wetting with process medium.
- the silicon material 3 rests with a first spatial orientation on the first conveyor belt 2.1 and is transported in the transport direction 4 onto the second conveyor belt 2.2. Due to the vertically downwardly offset, overlapping arrangement of the second conveyor belt 2.2 falls Silicon material 3 upon reaching an end region of the conveyor belt 2.1 in the vertical direction on the second conveyor belt 2.2, wherein a change in the spatial orientation of the silicon material 3 occurs, so a rotation takes place.
- overlapping conveyor belts 2.1 to 2.7 form a turning device for the silicon material 3.
- the conveyor belt 2.5 is provided for transferring the silicon material 3 from the cleaning chamber 5 into the rinsing chamber 6, in which a spray nozzle arrangement 12 is likewise provided which wets the silicon material at least almost on all sides with rinsing medium 8, in particular with deionized water.
- a sorter which sorts the treated silicon material during or after a cleaning step in terms of the size of the individual chunks.
- the sorting device is assigned to the dispensing station, so that sorting takes place after complete cleaning of the silicon material.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
L'invention concerne un procédé de préparation et de traitement de matériau de silicium (3) pour réaliser un processus de nettoyage, ce procédé comprenant les opérations suivantes: humidifier le matériau de silicium (3) dirigé selon une première orientation spatiale au moyen d'un premier agent de traitement liquide (7), modifier automatiquement l'orientation du matériau de silicium (3) au moyen d'un dispositif d'inversion, humidifier le matériau de silicium (3) à orientation modifiée au moyen du premier agent de traitement liquide (7). Ce procédé est réalisé au moyen d'un dispositif de nettoyage (1) correspondant.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006003990A DE102006003990A1 (de) | 2006-01-23 | 2006-01-23 | Verfahren und Vorrichtung zum Aufbereiten bzw. Bearbeiten von Siliziummaterial |
| PCT/EP2007/000523 WO2007082772A2 (fr) | 2006-01-23 | 2007-01-23 | Procédé et dispositif de préparation et de traitement de matériau de silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1979271A2 true EP1979271A2 (fr) | 2008-10-15 |
Family
ID=38268168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07711375A Withdrawn EP1979271A2 (fr) | 2006-01-23 | 2007-01-23 | Procédé et dispositif de préparation et de traitement de matériau de silicium |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US20080295863A1 (fr) |
| EP (1) | EP1979271A2 (fr) |
| JP (1) | JP2009523601A (fr) |
| KR (1) | KR20080087173A (fr) |
| CN (1) | CN101374763A (fr) |
| AU (1) | AU2007207104A1 (fr) |
| CA (1) | CA2639972A1 (fr) |
| DE (1) | DE102006003990A1 (fr) |
| IL (1) | IL192939A0 (fr) |
| MX (1) | MX2008009298A (fr) |
| NO (1) | NO20083666L (fr) |
| WO (1) | WO2007082772A2 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007063169A1 (de) * | 2007-12-19 | 2009-06-25 | Gebr. Schmid Gmbh & Co. | Verfahren und Anlage zum Bearbeiten bzw. Reinigen von Si-Blöcken |
| FR2943286B3 (fr) * | 2009-03-23 | 2011-02-25 | Air New Zealand Ltd | Ameliorations de ou concernant des sieges de passagers dans un vehicule |
| JP2013248550A (ja) * | 2012-05-30 | 2013-12-12 | Hamada Kousyou Co Ltd | スタットボルト(ボルト、tナット、ナット、又は加工製品等を含む、以下同じ)清掃装置 |
| CN102873046A (zh) * | 2012-09-29 | 2013-01-16 | 苏州鑫捷顺五金机电有限公司 | 一种冲压件清洗系统 |
| CN111468444A (zh) * | 2020-04-20 | 2020-07-31 | 新沂市新润电子有限公司 | 一种高频电子变压器生产用引线自动清洗装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1661912A (en) * | 1926-01-12 | 1928-03-06 | Dansk Pressefabrik As | Machine for manufacturing bottle caps, so called crown caps |
| US3869313A (en) * | 1973-05-21 | 1975-03-04 | Allied Chem | Apparatus for automatic chemical processing of workpieces, especially semi-conductors |
| DE7815889U1 (de) * | 1978-05-26 | 1980-04-03 | Industrie- Und Handelszentrale Walcker & Co Kg, 2854 Loxstedt | Waschvorrichtung fuer steigen o.dgl. |
| DE4121079A1 (de) * | 1991-06-26 | 1993-01-07 | Schmid Gmbh & Co Geb | Vorrichtung zum behandeln von plattenfoermigen gegenstaenden |
| JPH0513398A (ja) * | 1991-07-05 | 1993-01-22 | Hitachi Zosen Corp | 基板洗浄方法 |
| DE4244880C2 (de) * | 1992-08-21 | 1999-05-20 | Alois Mueller | Vorrichtung zum Waschen und Trocknen von mehreren Transportkästen |
| JP3123695B2 (ja) * | 1993-01-22 | 2001-01-15 | キヤノン株式会社 | 混合溶剤組成物、及びそれを利用する洗浄方法と洗浄処理装置 |
| JP2680783B2 (ja) * | 1994-07-14 | 1997-11-19 | 昭和金属工業株式会社 | コインの洗浄装置 |
| DE4446590A1 (de) * | 1994-12-24 | 1996-06-27 | Ipsen Ind Int Gmbh | Verfahren zur Reinigung metallischer Werkstücke |
| DE19509645B4 (de) * | 1995-03-17 | 2005-08-18 | Meissner, Werner | Waschanlage zum Reinigen von Gegenständen |
| DE19643532A1 (de) * | 1996-10-23 | 1998-04-30 | Schenck Process Gmbh | Verfahren und Schwingförderrinne zum Behandeln von Reinigungsgut |
| JPH1128430A (ja) * | 1996-12-29 | 1999-02-02 | Yoshiya Okazaki | 物品洗浄方法及び装置並びに洗浄材チップス |
| US5970599A (en) * | 1997-07-14 | 1999-10-26 | The Olofsson Corporation | Milling machine |
| US6251551B1 (en) * | 1997-07-17 | 2001-06-26 | Horst Kunze-Concewitz | Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components |
| DE19805597C2 (de) * | 1998-02-12 | 2002-02-07 | Cae Beyss Gmbh | Vorrichtung zum Waschen und/oder Trocknen von Werkstücken |
| KR100572295B1 (ko) * | 1998-04-16 | 2006-04-24 | 세미툴 인코포레이티드 | 반도체 웨이퍼와 같은 작업편을 가공하는 공정 및 장치 |
| ES2186448B1 (es) * | 1999-04-07 | 2004-08-16 | Tevesa Tessuti Vetro Española, S.A. | Dispositivo aplicable al lavado de recortes de fibra de vidrio, fibra de carbono, poliamida o similares preimpregnados con resina. |
| WO2002020845A2 (fr) * | 2000-09-08 | 2002-03-14 | Thomas Jefferson University | Reaction d'amplification a ultra haut rendement |
| DE10202124B4 (de) * | 2002-01-22 | 2011-03-17 | Meissner, Werner | Durchlaufreinigungseinrichtung |
| JP4341472B2 (ja) * | 2004-06-01 | 2009-10-07 | 信越半導体株式会社 | 物品の自動搬送水切り装置および自動搬送水切り方法、並びに物品の自動洗浄装置及び自動洗浄方法 |
-
2006
- 2006-01-23 DE DE102006003990A patent/DE102006003990A1/de not_active Ceased
-
2007
- 2007-01-23 CN CNA2007800033037A patent/CN101374763A/zh active Pending
- 2007-01-23 KR KR1020087020478A patent/KR20080087173A/ko not_active Withdrawn
- 2007-01-23 JP JP2008550698A patent/JP2009523601A/ja not_active Withdrawn
- 2007-01-23 WO PCT/EP2007/000523 patent/WO2007082772A2/fr not_active Ceased
- 2007-01-23 MX MX2008009298A patent/MX2008009298A/es unknown
- 2007-01-23 EP EP07711375A patent/EP1979271A2/fr not_active Withdrawn
- 2007-01-23 CA CA002639972A patent/CA2639972A1/fr not_active Abandoned
- 2007-01-23 AU AU2007207104A patent/AU2007207104A1/en not_active Abandoned
-
2008
- 2008-07-21 IL IL192939A patent/IL192939A0/en unknown
- 2008-07-22 US US12/177,741 patent/US20080295863A1/en not_active Abandoned
- 2008-08-25 NO NO20083666A patent/NO20083666L/no not_active Application Discontinuation
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2007082772A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009523601A (ja) | 2009-06-25 |
| IL192939A0 (en) | 2009-02-11 |
| CN101374763A (zh) | 2009-02-25 |
| AU2007207104A1 (en) | 2007-07-26 |
| KR20080087173A (ko) | 2008-09-30 |
| WO2007082772A3 (fr) | 2007-11-08 |
| CA2639972A1 (fr) | 2007-07-26 |
| US20080295863A1 (en) | 2008-12-04 |
| NO20083666L (no) | 2008-08-25 |
| DE102006003990A1 (de) | 2007-08-02 |
| WO2007082772A2 (fr) | 2007-07-26 |
| MX2008009298A (es) | 2008-12-12 |
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