EP1954852A1 - Reacteur de depot chimique en phase vapeur comportant un couvercle de chambre de traitement interchangeable - Google Patents

Reacteur de depot chimique en phase vapeur comportant un couvercle de chambre de traitement interchangeable

Info

Publication number
EP1954852A1
EP1954852A1 EP06819598A EP06819598A EP1954852A1 EP 1954852 A1 EP1954852 A1 EP 1954852A1 EP 06819598 A EP06819598 A EP 06819598A EP 06819598 A EP06819598 A EP 06819598A EP 1954852 A1 EP1954852 A1 EP 1954852A1
Authority
EP
European Patent Office
Prior art keywords
process chamber
ceiling
ceiling plate
reactor housing
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06819598A
Other languages
German (de)
English (en)
Inventor
Johannes KÄPPELER
Walter Franken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP1954852A1 publication Critical patent/EP1954852A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas

Definitions

  • the invention relates to a device for depositing at least one layer on at least one substrate with a process chamber arranged in a reactor housing, which has a process chamber bottom formed by a substrate holder, a process chamber ceiling opposite this and a gas inlet element for admitting a process gas containing layer-forming components, the process chamber Process chamber ceiling has a ceiling panel arranged below a ceiling panel support, which essentially extends over the entire horizontal surface extent of the substrate holder.
  • Such a device is known from DE 102 11 442 A1.
  • This device is used to deposit layers on substrate surfaces, the substrates resting in a process chamber on a substrate holder which is heated from below.
  • the ceiling of the process chamber is formed by the lower wall of a gas inlet element which has a large number of gas outlet openings opening into the process chamber.
  • a diffuser plate which forms the actual ceiling of the process chamber, extends below the underside of this gas inlet element.
  • a CVD reactor is also known from DE 103 20 597 A1.
  • the substrates rest on a substrate holder which forms the process chamber floor and is heated from below.
  • a process gas component is additionally introduced into the process chamber through a central opening in the substrate holder, ie from below.
  • DE 4037580 describes a dusting device.
  • a device is provided there for changing a target.
  • the target is directed towards ner area extension shifted into an exchange chamber.
  • means are provided to displace the target transversely to this direction.
  • EP 0869199 describes a process chamber that can be closed by a plate valve. If the plate valve is closed, the ceiling of the process chamber can be opened to remove a target located there.
  • a cluster tool is known from US 5769952, which comprises a plurality of process chambers.
  • One of the process chambers has an opening through which a substrate can be introduced into the process chamber.
  • the substrate is held with a border.
  • JP 05195218 A describes a sputtering device in which the ceiling is provided with a protective plate.
  • JP 07228970 A also describes a sputtering device in which a target can be exchanged.
  • JP 05230625 A describes a device for depositing thin layers in a vacuum chamber.
  • the layer material is removed from a target using a laser beam.
  • the latter can be removed from the vacuum chamber through a vacuum lock.
  • DE 102004045046 A1 describes a method and a device for applying an electrically conductive transparent coating to a substrate.
  • US 6321680 B2 describes a CVD device in which layer deposition is supported by a plasma. The substrates are combined in a magazine, which can be brought into the deposition chamber by a manipulator.
  • the invention has for its object to improve the device mentioned operationally.
  • the gas inlet element arranged in the lateral center of the process chamber is fed through an opening in the substrate holder.
  • All process gases can be introduced into the process chamber from below.
  • the gas inlet element projects through the opening of the substrate holder.
  • two different process gases are introduced into the process chamber, a first process gas being an organometallic compound and a second process gas being a metal hydride, so that depending on the choice of
  • Process gases mixed crystals of the third and fifth or the second and sixth main group can be separated.
  • the releasable assignment of the ceiling tile to the ceiling tile support is important.
  • the ceiling panel can be attached to the ceiling panel support with suitable hooks or quick-release fasteners.
  • the reactor housing also has a lateral opening through which the ceiling plate can be replaced.
  • the ceiling tile support can be cooled. While the ceiling tile support consists of a metal, the ceiling tile itself can consist of graphite or preferably quartz or sapphire.
  • the exchange of the ceiling plate is facilitated by the fact that the ceiling plate extends essentially without interruption over the entire cross-sectional extent of the underside of the ceiling plate carrier, so that There is a free space between the ceiling plate and the end face of the gas inlet element.
  • the ceiling plate carrier can be displaced vertically. It can be lowered from a process position to a ceiling plate replacement position. In this ceiling panel replacement position, the ceiling panel support is located approximately in the middle of the side opening, i.e. below its upper edge, so that a robot arm can reach into the process chamber in order to grip the ceiling panel and remove it from the process chamber and replace it with a new one.
  • the quick-release fasteners with which the ceiling panel is attached to the ceiling panel support are released.
  • the substrate holder In the process position, which can also correspond to a loading and unloading position, the substrate holder can be accessed in a known manner with a robot arm.
  • the substrates arranged there can be removed and exchanged for substrates to be coated.
  • the substrate holder preferably has an annular shape.
  • Several substrates are arranged in a ring on the periphery around the gas inlet element.
  • the substrate holder is driven in rotation from below, for which purpose the gas inlet element forms a hollow shaft which can be driven in rotation.
  • a plurality of gas supply channels can be arranged in the hollow shaft in order to transport the process gases to the gas outlet openings from which the process gases emerge in the horizontal direction.
  • the gas outlet openings preferably extend one above the other in the circumferential direction.
  • the openings are thus in the area of a cylindrical surface.
  • the substrate holder is heated from below.
  • not only the ceiling tile support can be moved vertically together with the ceiling tile, but also the substrate holder arrangement including the gas inlet element.
  • the side opening can be closed gas-tight by means of a gate.
  • the ceiling plate support preferably hangs on the ceiling of the reactor housing. ses. The suspension is able to lower the ceiling tile support. A coolant can flow through the holder.
  • the invention also relates to a method for depositing at least one layer on at least one substrate in a previously described process chamber. It is essential that after each process step the ceiling tiles, on which an undesired deposition has taken place, are removed from the process chamber.
  • the robot arm that removes the ceiling panel from the process chamber first brings this ceiling panel into a storage cassette in order to store it temporarily.
  • a cleaned ceiling plate is then removed from an etching chamber, which is likewise arranged outside the reactor housing, and introduced into the process chamber. There it is then attached under the ceiling tile support.
  • the etching chamber is a hermetically sealed reaction chamber in which a dry etching process can take place, for example by introducing gaseous HCl.
  • the introduced HCl etches off a parasitic metal coating from the ceiling plate.
  • the ceiling plate cleaned in this way can remain in the etched chamber in the cleaned state until it is needed. If the etching step is shorter than the process step carried out parallel to the etching step in the reactor, the cleaned ceiling plate can be stored there under a protective gas atmosphere. However, it is also possible to first bring the parasitically coated ceiling panel into the etching chamber and then to store the cleaned ceiling panels in a cassette.
  • the bracket with which the ceiling plate is attached to the ceiling support preferably engages on the edge of the ceiling plate.
  • the holder can engage under the essentially circular ceiling plate, each with a hook-shaped extension, at several, in particular three, locations arranged in a uniform angular distribution.
  • the brackets can be formed by rods which protrude from above through the process chamber ceiling and extend in the vertical direction. are available. The rods can also be rotated to bring the hook-shaped extensions under the edge of the ceiling plate or to release the ceiling plate for removal.
  • FIG. 1 shows the cross section of a reactor housing with the details necessary for explaining the inventive concept in a process position which also corresponds to a loading and unloading position
  • FIG. 2 is an illustration of FIG. 1 in a ceiling panel replacement position
  • Fig. 3 is a schematic representation of a device consisting of reactor housing 1, etching chamber 22 and cassette 21.
  • the reactor housing 1 consists of a metal housing which is gas-tight to the environment.
  • the ceiling of the reactor housing 1 can be removed for maintenance purposes.
  • a ceiling plate support 5 is attached to the ceiling of the reactor housing 1.
  • brackets 18, 19 are used, which at the same time serve as supply or discharge of a coolant in order to cool the ceiling panel support 5.
  • the ceiling panel support 5 has a coolant chamber 16.
  • the brackets 18, 19 are designed such that the vertical distance of the ceiling plate support 5 from the ceiling of the reactor housing 1 can be varied.
  • the supply line 18 or discharge line 19 for the coolant can be telescopic, for example.
  • the underside of the ceiling panel support 5 forms a substantially circular disk-shaped flat contact surface for a ceiling panel 6.
  • the ceiling tile support 5 is made of a metal, for example aluminum or stainless steel.
  • the ceiling panel 6 has essentially the same contour as the underside of the ceiling panel support 5.
  • the ceiling plate 6 of the exemplary embodiment extending uninterruptedly over the entire surface of the underside of the ceiling plate support. There are therefore no openings in the ceiling plate 6. Also, no components of the reactor protrude through the ceiling plate 6.
  • the ceiling plate 6 is, however, attached to the ceiling plate support 5 with detachable brackets.
  • the holding means can be formed by hooks. However, it is also conceivable to connect the ceiling panel 6 to the ceiling panel support 5 by means of a bayonet catch.
  • the process chamber 3 extends below the ceiling plate 6, so that the ceiling plate 6 forms the ceiling thereof.
  • the process chamber 3 also has a rotationally symmetrical design.
  • a gas inlet element 7 with which the process gases can be introduced into the process chamber 3.
  • the essentially cylindrical gas inlet element 7 projects through a central opening 8 of a substrate holder 4 from below.
  • the cover plate 6 consists of an essentially thermally and electrically insulating material, for example quartz or sapphire
  • the substrate holder 4 preferably consists of graphite.
  • the ceiling plate 6 can also consist of graphite.
  • the annular disk-shaped substrate holder 4 has a plurality of pockets arranged in the circumferential direction.
  • pockets are open at the top and have a pot-shaped shape.
  • pockets are circular disc-shaped susceptors 15, which can rotate in the pockets on a gas rotary bearing.
  • a substrate 2 to be coated is located on each of the susceptors 15.
  • a heating spiral 11 is located below the substrate holder 4. This can be a resistance heating. However, it is preferably an RF transmitter coil that induces eddy currents in the electrically conductive substrate holder 4, which lead to the heating of the substrate holder 4.
  • the gas inlet member 7 is formed by a hollow shaft 12.
  • This hollow shaft 12 can protrude through the bottom of the reactor housing 1.
  • the hollow shaft 12 is preferably driven in rotation.
  • the hollow shaft 12 carries the substrate holder 4, so that the rotational movement of the hollow shaft 12 is transmitted to the substrate holder 4.
  • the gas forming the above-described gas rotary bearing can be fed through the hollow shaft 12.
  • the process gas which is a hydride of an element of III. or IL main group on the one hand and around an organometallic compound of an element of V. or VI. Main group, on the other hand, can act. Both the hydride and the organometallic compound are introduced into the process chamber together with a carrier gas. Separate flow channels 13, 14 are used for this purpose.
  • the hydride which can be AsH 3 , PH 3 or NH 3 , is passed through a central flow channel 14 into the area under the end plate 7 ′ of the gas inlet element 7. There the initially vertical flow of the process gas is diverted into a horizontal flow.
  • the process gas flows in the radial direction from outlet openings 14 ', which extends over a circumferential surface zone into the process chamber 3. Below the outlet opening 14' of the flow channel 14, there is an outlet opening 13 'for the metal-organic connection which is in the form of a cylinder jacket.
  • This outlet opening 13 ' from which the organometallic compound flows out together with the carrier gas carrying it in the horizontal direction, forms the end of a flow channel 13, through which the organometallic compound is likewise fed through the underside of the reactor housing 1.
  • the lower gas outlet opening 13 ′ extends directly above the surface of the substrate holder 4 facing the process chamber 3.
  • the outlet opening 14 ′ opens into the process chamber 3 below the axial center of the process chamber 3.
  • the ceiling panel support 5 it is not only possible to lower the ceiling panel support 5 together with the ceiling panel 6 releasably attached to its underside in the direction of the arrow labeled A in FIG. 1.
  • the surface of the substrate holder 4 facing the process chamber 3 lies in the access area through the lateral opening 9 of the reactor housing 1.
  • the surface of the substrate holder 4 facing the process chamber 3 is here above the height of the lower edge of the Opening 9 and below the upper edge of opening 9. If the gate 17 which closes the opening 9 in a gas-tight manner, a robot arm can reach into the process chamber 3 in order to remove the coated substrates 2 and exchange them for substrates 2 to be coated.
  • the substrate holder 4 is always rotated through a corresponding circumferential angle.
  • the ceiling tile is exchanged between individual coating processes in order to clean the ceiling tile. Since the ceiling panels in the process have a considerably lower temperature than the substrate holder 4, a parasitic coating of the ceiling panel 6 cannot be avoided. Such a parasitic coating of the ceiling plate 6 generally leads to disadvantages because material particles deposited on the surface of the ceiling plate 6 can form and can fall down onto the substrates. By regularly changing the ceiling plate 6, the mass of the material deposited there is kept within tolerable limits.
  • the ceiling plate support 5 can be rigidly connected to the substrate holder 4 via suitable rigid connections, in particular arranged outside the process chamber 3. With this arrangement, ceiling tile support 5 and substrate holder 4 do not need to be driven separately in the vertical direction.
  • the vertical drive can then engage, for example, in the hollow shaft 12 which is led out of the reactor housing 1 through a bottom opening.
  • the rotary drive can also act on this hollow axis 12 in order to drive the substrate holder 4 around its own axis during the deposition process. However, it is also possible to accommodate the rotary drive and / or the vertical drive within the reactor housing 1.
  • the reference numeral 20 designates swivel hooks which can be rotated from the outside. These Swivel hooks reach under the ceiling plate 6 with a hook extension in order to hold it firmly on the ceiling plate holder.
  • FIG. 3 shows, roughly schematically, an overall device with a reactor housing 1, an etching chamber 22 and a cassette 21. Between these three chambers 1, 21 and 22 there is a multi-articulated robot arm 23 1 Retract the process chamber 3 shown.
  • the gripper then lies in the free space 10 below the ceiling plate 6.
  • the gripper can then be displaced vertically upwards until it comes into contact with the system on the ceiling plate 6.
  • the swivel hook 20 is rotated so that the ceiling plate 6 is free.
  • the ceiling plate is removed from the ceiling plate support 5 by vertically lowering the gripper.
  • the gripper then leaves the process chamber 3 together with the cover plate 6 and places the cover plate in a cassette 21.
  • the gripping arm 23 has subsequently removed a cleaned ceiling plate 6 from an etching chamber 22, it brings it into the process chamber 3, where it is attached to the ceiling plate support 5 by means of the swivel hook 20.
  • the swivel hook 20 has a bend at its end which projects into the process chamber 10. This angled portion can engage underneath the ceiling plate 6, which has an essentially circular disk shape. Three or more swivel hooks can be provided, each of which protrude into the interior of the reactor through openings in the reactor housing. The swivel hooks 20 can not only be rotated in order to bring the holding projections into the base position. The swivel hooks 20 can also shift in the vertical direction if it is necessary to lower the ceiling plate 6.
  • the etching chamber 22 is a reaction vessel hermetically sealed off from the outside world. It can be tempered. It can be brought to a process temperature with suitable heating elements, at which a dry etching process can take place within the etching chamber 22.
  • an etchable gas is introduced into the etching chamber 22. It can be dry HCl.
  • an inert gas can also be introduced into the etching chamber 22 in order to purge the etching chamber 22.
  • the cleaned ceiling plate 6 can also remain under this protective gas atmosphere within the etching chamber 22 until it is removed there with the reactor arm 23 in order to be inserted into the reactor housing after the gate 17 has been opened in the manner described above.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de dépôt d'au moins une couche sur au moins un substrat (2), comportant une chambre de traitement disposée dans un boîtier de réacteur (1), présentant une base de chambre de traitement formée par un porte-substrat (4), un couvercle de chambre de traitement (5, 6) opposé à la base et un organe d'entrée de gaz (7) destiné à l'entrée d'un gaz de traitement contenant des composants de formation de couche. Le couvercle de chambre de traitement (5, 6) présente une plaque de couvercle (6) disposée en-dessous d'un support de couvercle (5), s'étendant essentiellement sur toute l'extension de surface horizontale du porte-substrat (4). L'invention vise à améliorer l'utilisation dudit dispositif. A cet effet, l'organe d'entrée de gaz (7) disposé dans le centre latéral de la chambre de traitement (3) est alimenté par une ouverture du porte-substrat (4) et la plaque de couvercle (6) affectée de façon amovible au support de couvercle (5) peut être remplacée au travers d'une ouverture latérale (9) du boîtier de réacteur (1).
EP06819598A 2005-11-25 2006-11-20 Reacteur de depot chimique en phase vapeur comportant un couvercle de chambre de traitement interchangeable Withdrawn EP1954852A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200510056324 DE102005056324A1 (de) 2005-11-25 2005-11-25 CVD-Reaktor mit auswechselbarer Prozesskammerdecke
PCT/EP2006/068642 WO2007060143A1 (fr) 2005-11-25 2006-11-20 Reacteur de depot chimique en phase vapeur comportant un couvercle de chambre de traitement interchangeable

Publications (1)

Publication Number Publication Date
EP1954852A1 true EP1954852A1 (fr) 2008-08-13

Family

ID=37728344

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06819598A Withdrawn EP1954852A1 (fr) 2005-11-25 2006-11-20 Reacteur de depot chimique en phase vapeur comportant un couvercle de chambre de traitement interchangeable

Country Status (4)

Country Link
EP (1) EP1954852A1 (fr)
DE (1) DE102005056324A1 (fr)
TW (1) TWI402373B (fr)
WO (1) WO2007060143A1 (fr)

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TW200728496A (en) 2007-08-01
DE102005056324A1 (de) 2007-06-06

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