WO2021209578A1 - Procédé de dépôt chimique en phase vapeur et réacteur de dépôt chimique en phase vapeur faisant intervenir des corps remplaçables effectuant un échange de chaleur avec le substrat - Google Patents

Procédé de dépôt chimique en phase vapeur et réacteur de dépôt chimique en phase vapeur faisant intervenir des corps remplaçables effectuant un échange de chaleur avec le substrat Download PDF

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Publication number
WO2021209578A1
WO2021209578A1 PCT/EP2021/059848 EP2021059848W WO2021209578A1 WO 2021209578 A1 WO2021209578 A1 WO 2021209578A1 EP 2021059848 W EP2021059848 W EP 2021059848W WO 2021209578 A1 WO2021209578 A1 WO 2021209578A1
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WIPO (PCT)
Prior art keywords
substrate
process chamber
bodies
process step
storage device
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PCT/EP2021/059848
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German (de)
English (en)
Inventor
Georg Quartier
Original Assignee
Aixtron Se
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Publication date
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Publication of WO2021209578A1 publication Critical patent/WO2021209578A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to a method for the thermal treatment of at least one substrate or for the deposition of a plurality of layers on at least one substrate in a process chamber of a CVD reactor, wherein several process steps are carried out successively at different temperatures, total gas and / or flow speeds, wherein at least one first body is arranged in the process chamber during at least one first process step, which body influences the treatment result or the growth of the layer deposited in a process step due to its position in the process chamber, its external shape or nature.
  • the invention also relates to a device for performing the method with a CVD reactor having a process chamber, a susceptor arranged in the process chamber for receiving at least one substrate, a heating device to heat the susceptor and the substrate to an elevated temperature , at least one first body arranged in the process chamber, which is arranged in such proximity to the substrate that it influences a heat flow to or from the substrate, and with a transport device to insert at least the first body at a predetermined point in the process chamber and to be taken from the process chamber.
  • a CVD reactor having a process chamber, a susceptor arranged in the process chamber for receiving at least one substrate, a heating device to heat the susceptor and the substrate to an elevated temperature , at least one first body arranged in the process chamber, which is arranged in such proximity to the substrate that it influences a heat flow to or from the substrate, and with a transport device to insert at least the first body at a predetermined point in the process chamber and to be taken from the process chamber.
  • Methods and CVD reactors of the type described above are used in the prior art in order to deposit layers on, in particular, single-crystal semiconductor substrates in successive process steps.
  • the layers are deposited with process parameters that differ from one another, the process parameters being able to differ, among other things, by the process temperature and the total pressure in the process chamber as well as a flow rate through the process chamber.
  • the process temperatures are usually in a range between 600 ° C and 800 ° C.
  • US Pat. No. 5,431,737 describes a substrate carrier which can be exchanged for another substrate carrier of the same configuration. In each process step, although not the same, there is an identically designed substrate carrier in the process chamber.
  • US 2018/0019107 A1 discloses a method for depositing layers in a plasma coating system. Bodies can be brought into and out of the process chamber with a gripper device.
  • US 2019/0088531 A1 describes a device for arranging annular bodies in a process chamber.
  • the positioning of a centering ring in a process chamber is known from WO 2019/152751 A2.
  • a generic method for the thermal treatment of substrates in particular for the deposition of a sequence of layers on substrates, in which at least two layers are carried out with different process parameters, have different bodies in the process chamber an influence on the temperature profile and in particular the lateral temperature profile of the surface of the substrate.
  • a uniform temperature profile is required for the deposition of homogeneous layers.
  • the bodies can be disk-shaped substrate holders on which the substrate rests, or support rings that are used to handle the substrate with a gripper. Such rings are known, for example, from DE 102005 018162 A1 or DE 102018113400 A1.
  • the transport rings have a radially outer edge that engages over a substrate holder so that fingers of a gripper can grip under this edge.
  • the bodies can also be cover rings which are carried by a transport ring, for example, and which surround the substrate.
  • This body is heated by a heating device, which also has a susceptor that heats the substrate or the substrate holder carrying the substrate.
  • a temperature profile that is individually dependent on the process parameters is established within the process chamber. This includes different temperatures or temperature differences between the substrate and the body, for example the substrate holder, the support ring or the cover ring.
  • the substrate is locally cooled or heated in different ways in the different process steps.
  • the heat flow from the substrate or to the substrate of one of the bodies is different for the various process parameters, with the result that the temperature profile, in particular of the surface of the substrate, is not optimal.
  • the invention is based on the object of eliminating the disadvantages described above and, in particular, of taking measures with which the temperature profile of the surface of the substrate is as homogeneous as possible in the various process parameters of different process steps.
  • the object is achieved by the invention specified in the claims, the subclaims not only representing advantageous developments of the independent claims, but also independent solutions to the problem.
  • a second body corresponds to a first body, for example a substrate holder, a transport ring or a cover ring. After the first body has been removed from the process chamber, the second body can be brought into the process chamber and positioned there at the same point at which the first body was positioned during the first process step. It is essential that the two bodies differ with regard to their influence on the temperature distribution on the substrate.
  • the bodies can differ in terms of their surface, for example the surfaces can have different reflectivities.
  • the bodies can also differ in their material, for example the bodies can have different heat capacities or heat conductivities from one another.
  • the bodies can differ in their geometry, for example two bodies, which each form a cover ring, can differ in their material thickness or in their wall thickness. Two bodies, each forming a support ring, can become also differ by their material thickness or by a wall thickness. Two bodies, which each form a substrate holder, can also differ in terms of material thickness or diameter. Two substrate holders can also differ in the design of the surface facing the substrate carried by the substrate holder. This surface can have a different roughness. However, it is also possible that support projections which protrude from the surface of the substrate holder in order to reach under the substrate at points or in a linear manner have a different height or a different geometry. Furthermore, it can be provided that the surface above which the substrate is mounted is curved inwards or outwards.
  • the degree of curvature can be different.
  • the first body and the second body, which can be exchanged for the first body differ in terms of their properties which influence the temperature profile of the substrate when installed in the process chamber.
  • the two bodies are in particular different in such a way that, under otherwise identical conditions, such as temperatures, gas pressures and gas flows in particular, they differ with regard to their heat exchange to the substrate.
  • the bodies which differ from one another are used in such a way that, given the given process parameters, the body in each case has the optimal properties for achieving a uniform temperature profile on the substrate surface.
  • the body that interacts optimally with the substrate is used in each case. It can be provided that a different body is used together with the substrate in each process step.
  • cover rings or transport rings can be used, the use of which leads to a relative temperature reduction in the edge region of the substrate or, alternatively, cover rings or transport rings, the use of which leads to a relative temperature increase in the edge region of the substrate.
  • either those substrate holders can be used whose use leads to a relative temperature reduction in the central region of the substrate leads or, alternatively, substrate holders, the use of which leads to a relative temperature increase in the central region of the substrate.
  • the body that is to say in particular the substrate holder, the transport ring or a cover ring, is removed from the process chamber together with the substrate. This can be done automatically with a transport device, for example with a gripper.
  • one wall of the process chamber has a loading and unloading opening through which the gripper can reach in order to grip the ensemble comprising the substrate.
  • the ensemble can consist of the substrate holder, the transport ring and the cover ring and the substrate.
  • the ensemble preferably only consists of a transport ring and substrate or a transport ring, substrate and cover ring.
  • at least one of these bodies that is to say sub strathalter, transport ring or cover ring, is replaced by another body that performs the same function but has different physical properties.
  • the device according to the invention has a storage device in which one or more of the bodies, for example substrate holder, transport ring and cover ring, are stored.
  • This storage device can be heated. Their temperature can be in the range of the process temperature, i.e. in the range between 600 ° C and 800 ° C.
  • the body removed from the process chamber is placed in the storage facility.
  • a functionally identical body, but which has different properties influencing the heat flow to the substrate, is removed from the storage device and brought together with the substrate into the same or another process chamber, where a further process step is carried out.
  • the substrate can be temporarily stored in a buffer. This can also be done at elevated temperatures.
  • a body for example a substrate holder, transport ring or cover ring, is repeatedly exchanged for another body fulfilling the same function, with at least one process step being carried out with the body.
  • Fig. 1 in the representation of a cross section through an axis cal cally a CVD reactor 1 with a susceptor 2 arranged therein, which is heated by a heating device 9,
  • Fig. 2 in the manner of a section, the plan view of the susceptor 2, which stores a plurality of substrate holders 3, each carrying a substrate to be coated,
  • FIG. 3 enlarges the detail III in FIG. 2 without the substrate
  • FIG. 4 shows a section along the line IV-IV in FIG. 2,
  • FIG. 5 shows a substrate holder 3, a transport ring 4 and a cover ring 5 in the manner of a perspective
  • Fig. 6 schematically shows the components of a Vorrich device according to the invention, namely a CVD reactor 1, a Vorratungseinrich device 10 for substrate holder 3, transport rings 4 and heat transfer rings 5 and a transport device 13 designed as a gripper. Description of the embodiments
  • the CVD reactor 1 has an outwardly gas-tight housing which can be evacuated by a pump, not shown. With a gas mixing system not shown, a process gas can be provided which, for example, organometallic compounds of III. Has main group and hydrides of main group V. This process gas is fed together with a carrier gas through a gas inlet element 22 into a process chamber 8 which extends around the gas inlet element 22 arranged in its center.
  • the bottom of the process chamber 8 is formed by an upper side of a susceptor 2 and the ceiling of the process chamber 8 by a ceiling plate extending parallel to it and with a distance from it.
  • a gas outlet element 23 extends around the process chamber 8.
  • a gas nozzle (not shown) in the area of the bottom 25 of the pocket 24, a flushing gas can be brought into the space between the underside of a substrate holder 3 arranged in the pocket 24 and the pocket bottom 25, which forms a gas cushion that supports the substrate holder 3 and drives.
  • a heating device 9 for example an RF heater, IR heater or some other, for example se lamp heater, with which the susceptor 2 can be heated.
  • the heat generated by the heating device 9 flows through the susceptor 2 into the substrate holder 3 and from the substrate holder 3 into a substrate 7 carried by the substrate holder 3 in order to bring its surface to a temperature at which the growth of a layer, in particular a III- V-shift takes place.
  • the substrate holder 3 forms a circumferential step 15 on which a transport ring 4 is mounted.
  • the transport ring 4 surrounds the substrate 7, be seated however a portion that extends below the edge of the substrate 7, so that lifting the transport ring 4 leads to the fact that the sub strate 7 at the edge of a support surface 21 'of an angular recess 21 under attacked will. It can thus be removed from the process chamber 8 by means of the gripper 13 shown schematically in FIG.
  • the ring can be a heat transfer ring.
  • the substrate holder 3 has a circular disk-shaped outline and an upper side facing the substrate 7, which forms a slightly curved base 17. At the edge of the bottom 17, several support projections 18 are vorgese hen that protrude beyond the bottom 17 and carry the substrate 7 at a distance from the bottom 17.
  • the temperature profile or the lateral temperature distribution on the surface of the substrate 7 depends on the heat flow from the heating device 9 to the process chamber 8. Since the ceiling of the process chamber 8 has a lower temperature than the susceptor 2, a steady flow of heat forms between the susceptor 2 and the process chamber ceiling during the deposition process.
  • the heat flow changes when the process parameters, for example the process temperature, the total gas pressure in the process chamber 8, but also a gas flow through the process chamber 8, change.
  • the temperature of more distant bodies for example that of a cover plate 6, can change by the transport ring 4 or the heat transfer ring 5 is arranged.
  • the heat transport properties which are given for example by the geometry and the material, of the transport ring 4 and the heat transfer ring 5 are adapted to the respective process parameters in such a way that the surface temperature on the surface of the Substrate 7 is essentially the same over the entire area.
  • a set consisting of a substrate holder 3, a transport ring 4 and a heat transfer ring 5 one or more first process steps are carried out in which the aforementioned bodies 3, 4, 5 ensure that the temperature profile above the substrate 7 is as flat as possible.
  • the second process step differs from the first process step in that the process parameters are so different that the set of bodies 3, 4, 5 used in the first process step does not result in a flat temperature profile above the substrate 7.
  • At least the transport ring 4 is therefore removed from the process using the gripper 13 together with the substrate 7. chamber 8 removed.
  • the substrate holder 3 can also be removed from the process chamber 8.
  • the substrate 7 is separated from the bodies 3, 4, 5 outside the process chamber and temporarily stored in a buffer 14.
  • the bodies 3, 4, 5 or at least one of them used in the first process step is brought into a storage device 10.
  • This upstream storage device 10 can be heated. It can be tempered to 600 ° C to 800 ° C.
  • bodies 3, 4, 5 are stored, which can be brought to the same stand at which the above-mentioned bodies 3, 4, 5 were in the first process step.
  • a second set of bodies 3, 4, 5 is removed from the storage device 10 and brought into connection with the substrate 7 instead of the first set.
  • the bodies 3, 4, 5 are then inserted together with the substrate 7 into the process chamber 8 with the aid of the gripper 13.
  • the bodies 3, 4, 5 or at least some of them are designed in such a way that they ensure that a flat temperature profile is formed above the substrate 7 with the process parameters of the second process step.
  • a similar exchange of at least one of the bodies 3, 4, 5 for another of the bodies 3, 4, 5 can take place between several process steps, so that each process step is carried out with a set of bodies 3, 4, 5 ophmated for it .
  • the above explanations serve to explain the inventions covered by the application as a whole, which further develop the state of the art at least through the following combinations of features, in which case two, more or all of these combinations of features can also be combined, namely:
  • a method which is characterized in that in a first process step with first process parameters in the process chamber 8, a first layer or layer sequence is deposited on the substrate, the substrate 7 at least one first body 3, 4, 5 in a predetermined spatial relationship is adjacent, the body 3, 4, 5 is removed together with the substrate after the first process step from the process chamber 8, the body 3, 4, 5 is separated from the substrate 7, the substrate 7 in an intermediate storage 14 and the body 3, 4, 5 are temporarily stored in a storage device 10, the second body 3, 4, 5, which is different from the first body 3, 4, 5, is provided from the storage device 10 and the second body 3, 4, 5 is brought into the same spatial relationship to the substrate 7 in the process chamber 8 and in a second process step with two th process parameters in the process chamber 8, a second layer or layer sequence is deposited on the substrate 7.
  • a device for carrying out the method which is characterized by a storage device 10 for the intermediate storage of the first body 3, 4, 5 and a second body which can be used interchangeably with the first body 3, 4, 5 at the predetermined location in the process chamber 8 Body 3, 4,
  • a method or a device which is characterized or which is characterized in that the first or second body is a substrate holder 3, which holds the substrate 7 during the process step, and / or a transport ring 4 is the edge of the Substrate 7 engages under the substrate 7 during the process step or during transport and / or is a cover ring 5 which engages around the edge of the substrate.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un procédé pour traiter thermiquement au moins un substrat (7) ou pour déposer une pluralité de couches sur au moins un substrat (7) dans une chambre de traitement (8) d'un réacteur de dépôt chimique en phase vapeur (1), plusieurs étapes de traitement étant effectuées à la suite les unes des autres à différentes températures, pressions gazeuses totales et/ou vitesses d'écoulement. Pendant au moins une première étape de traitement, au moins un premier corps (3, 4, 5) agencé dans la chambre de traitement (8) influe, de par sa position dans la chambre de traitement (8), sa forme extérieure ou sa nature, sur le résultat du traitement ou la croissance de la couche déposée lors de l'étape de traitement. Lors de chacune des plusieurs étapes de traitement, les corps influent différemment sur le profil des températures des surfaces de substrat. Pour empêcher cet inconvénient, plusieurs corps de ce type sont utilisés, ces corps étant respectivement optimalisés pour une des étapes de traitement et sont remplacés entre les étapes de procédé.
PCT/EP2021/059848 2020-04-17 2021-04-16 Procédé de dépôt chimique en phase vapeur et réacteur de dépôt chimique en phase vapeur faisant intervenir des corps remplaçables effectuant un échange de chaleur avec le substrat WO2021209578A1 (fr)

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DE102020110570.3A DE102020110570A1 (de) 2020-04-17 2020-04-17 CVD-Verfahren und CVD-Reaktor mit austauschbaren mit dem Substrat Wärme austauschenden Körpern
DE102020110570.3 2020-04-17

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DE102020123326A1 (de) * 2020-09-07 2022-03-10 Aixtron Se CVD-Reaktor mit temperierbarem Gaseinlassbereich

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WO2019152751A2 (fr) 2018-02-01 2019-08-08 Yield Engineering Systems Anneaux de bord interchangeables pour stabiliser le placement de plaquette et système utilisant ceux-ci
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US20200373190A1 (en) 2019-05-20 2020-11-26 Applied Materials, Inc. Process kit enclosure system

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US5431737A (en) 1992-02-04 1995-07-11 Genus, Inc. Interchangeable CVD chuck surface
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
DE102005018162A1 (de) 2005-04-19 2006-10-26 Aixtron Ag Halbleiterbehandlungsvorrichtung für ein CVD-Verfahren
US20120231558A1 (en) * 2005-07-05 2012-09-13 Mattson Technology, Inc Method and system for determining optical properties of semiconductor wafers
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US20120070577A1 (en) * 2010-09-22 2012-03-22 Deura Kaori Film-forming apparatus and film-forming method
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US20150340209A1 (en) 2014-05-20 2015-11-26 Micron Technology, Inc. Focus ring replacement method for a plasma reactor, and associated systems and methods
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WO2018236201A1 (fr) * 2017-06-23 2018-12-27 주성엔지니어링(주) Appareil de support de substrat
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WO2019152751A2 (fr) 2018-02-01 2019-08-08 Yield Engineering Systems Anneaux de bord interchangeables pour stabiliser le placement de plaquette et système utilisant ceux-ci
DE102018113400A1 (de) 2018-06-06 2019-12-12 Aixtron Se CVD Reaktor mit Tragring zum Substrathandhaben
US20200373190A1 (en) 2019-05-20 2020-11-26 Applied Materials, Inc. Process kit enclosure system

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