WO2021209578A1 - Cvd process and cvd reactor with exchangeable bodies that exchange heat with the substrate - Google Patents

Cvd process and cvd reactor with exchangeable bodies that exchange heat with the substrate Download PDF

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Publication number
WO2021209578A1
WO2021209578A1 PCT/EP2021/059848 EP2021059848W WO2021209578A1 WO 2021209578 A1 WO2021209578 A1 WO 2021209578A1 EP 2021059848 W EP2021059848 W EP 2021059848W WO 2021209578 A1 WO2021209578 A1 WO 2021209578A1
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WIPO (PCT)
Prior art keywords
substrate
process chamber
bodies
process step
storage device
Prior art date
Application number
PCT/EP2021/059848
Other languages
German (de)
French (fr)
Inventor
Georg Quartier
Original Assignee
Aixtron Se
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Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of WO2021209578A1 publication Critical patent/WO2021209578A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to a method for the thermal treatment of at least one substrate or for the deposition of a plurality of layers on at least one substrate in a process chamber of a CVD reactor, wherein several process steps are carried out successively at different temperatures, total gas and / or flow speeds, wherein at least one first body is arranged in the process chamber during at least one first process step, which body influences the treatment result or the growth of the layer deposited in a process step due to its position in the process chamber, its external shape or nature.
  • the invention also relates to a device for performing the method with a CVD reactor having a process chamber, a susceptor arranged in the process chamber for receiving at least one substrate, a heating device to heat the susceptor and the substrate to an elevated temperature , at least one first body arranged in the process chamber, which is arranged in such proximity to the substrate that it influences a heat flow to or from the substrate, and with a transport device to insert at least the first body at a predetermined point in the process chamber and to be taken from the process chamber.
  • a CVD reactor having a process chamber, a susceptor arranged in the process chamber for receiving at least one substrate, a heating device to heat the susceptor and the substrate to an elevated temperature , at least one first body arranged in the process chamber, which is arranged in such proximity to the substrate that it influences a heat flow to or from the substrate, and with a transport device to insert at least the first body at a predetermined point in the process chamber and to be taken from the process chamber.
  • Methods and CVD reactors of the type described above are used in the prior art in order to deposit layers on, in particular, single-crystal semiconductor substrates in successive process steps.
  • the layers are deposited with process parameters that differ from one another, the process parameters being able to differ, among other things, by the process temperature and the total pressure in the process chamber as well as a flow rate through the process chamber.
  • the process temperatures are usually in a range between 600 ° C and 800 ° C.
  • US Pat. No. 5,431,737 describes a substrate carrier which can be exchanged for another substrate carrier of the same configuration. In each process step, although not the same, there is an identically designed substrate carrier in the process chamber.
  • US 2018/0019107 A1 discloses a method for depositing layers in a plasma coating system. Bodies can be brought into and out of the process chamber with a gripper device.
  • US 2019/0088531 A1 describes a device for arranging annular bodies in a process chamber.
  • the positioning of a centering ring in a process chamber is known from WO 2019/152751 A2.
  • a generic method for the thermal treatment of substrates in particular for the deposition of a sequence of layers on substrates, in which at least two layers are carried out with different process parameters, have different bodies in the process chamber an influence on the temperature profile and in particular the lateral temperature profile of the surface of the substrate.
  • a uniform temperature profile is required for the deposition of homogeneous layers.
  • the bodies can be disk-shaped substrate holders on which the substrate rests, or support rings that are used to handle the substrate with a gripper. Such rings are known, for example, from DE 102005 018162 A1 or DE 102018113400 A1.
  • the transport rings have a radially outer edge that engages over a substrate holder so that fingers of a gripper can grip under this edge.
  • the bodies can also be cover rings which are carried by a transport ring, for example, and which surround the substrate.
  • This body is heated by a heating device, which also has a susceptor that heats the substrate or the substrate holder carrying the substrate.
  • a temperature profile that is individually dependent on the process parameters is established within the process chamber. This includes different temperatures or temperature differences between the substrate and the body, for example the substrate holder, the support ring or the cover ring.
  • the substrate is locally cooled or heated in different ways in the different process steps.
  • the heat flow from the substrate or to the substrate of one of the bodies is different for the various process parameters, with the result that the temperature profile, in particular of the surface of the substrate, is not optimal.
  • the invention is based on the object of eliminating the disadvantages described above and, in particular, of taking measures with which the temperature profile of the surface of the substrate is as homogeneous as possible in the various process parameters of different process steps.
  • the object is achieved by the invention specified in the claims, the subclaims not only representing advantageous developments of the independent claims, but also independent solutions to the problem.
  • a second body corresponds to a first body, for example a substrate holder, a transport ring or a cover ring. After the first body has been removed from the process chamber, the second body can be brought into the process chamber and positioned there at the same point at which the first body was positioned during the first process step. It is essential that the two bodies differ with regard to their influence on the temperature distribution on the substrate.
  • the bodies can differ in terms of their surface, for example the surfaces can have different reflectivities.
  • the bodies can also differ in their material, for example the bodies can have different heat capacities or heat conductivities from one another.
  • the bodies can differ in their geometry, for example two bodies, which each form a cover ring, can differ in their material thickness or in their wall thickness. Two bodies, each forming a support ring, can become also differ by their material thickness or by a wall thickness. Two bodies, which each form a substrate holder, can also differ in terms of material thickness or diameter. Two substrate holders can also differ in the design of the surface facing the substrate carried by the substrate holder. This surface can have a different roughness. However, it is also possible that support projections which protrude from the surface of the substrate holder in order to reach under the substrate at points or in a linear manner have a different height or a different geometry. Furthermore, it can be provided that the surface above which the substrate is mounted is curved inwards or outwards.
  • the degree of curvature can be different.
  • the first body and the second body, which can be exchanged for the first body differ in terms of their properties which influence the temperature profile of the substrate when installed in the process chamber.
  • the two bodies are in particular different in such a way that, under otherwise identical conditions, such as temperatures, gas pressures and gas flows in particular, they differ with regard to their heat exchange to the substrate.
  • the bodies which differ from one another are used in such a way that, given the given process parameters, the body in each case has the optimal properties for achieving a uniform temperature profile on the substrate surface.
  • the body that interacts optimally with the substrate is used in each case. It can be provided that a different body is used together with the substrate in each process step.
  • cover rings or transport rings can be used, the use of which leads to a relative temperature reduction in the edge region of the substrate or, alternatively, cover rings or transport rings, the use of which leads to a relative temperature increase in the edge region of the substrate.
  • either those substrate holders can be used whose use leads to a relative temperature reduction in the central region of the substrate leads or, alternatively, substrate holders, the use of which leads to a relative temperature increase in the central region of the substrate.
  • the body that is to say in particular the substrate holder, the transport ring or a cover ring, is removed from the process chamber together with the substrate. This can be done automatically with a transport device, for example with a gripper.
  • one wall of the process chamber has a loading and unloading opening through which the gripper can reach in order to grip the ensemble comprising the substrate.
  • the ensemble can consist of the substrate holder, the transport ring and the cover ring and the substrate.
  • the ensemble preferably only consists of a transport ring and substrate or a transport ring, substrate and cover ring.
  • at least one of these bodies that is to say sub strathalter, transport ring or cover ring, is replaced by another body that performs the same function but has different physical properties.
  • the device according to the invention has a storage device in which one or more of the bodies, for example substrate holder, transport ring and cover ring, are stored.
  • This storage device can be heated. Their temperature can be in the range of the process temperature, i.e. in the range between 600 ° C and 800 ° C.
  • the body removed from the process chamber is placed in the storage facility.
  • a functionally identical body, but which has different properties influencing the heat flow to the substrate, is removed from the storage device and brought together with the substrate into the same or another process chamber, where a further process step is carried out.
  • the substrate can be temporarily stored in a buffer. This can also be done at elevated temperatures.
  • a body for example a substrate holder, transport ring or cover ring, is repeatedly exchanged for another body fulfilling the same function, with at least one process step being carried out with the body.
  • Fig. 1 in the representation of a cross section through an axis cal cally a CVD reactor 1 with a susceptor 2 arranged therein, which is heated by a heating device 9,
  • Fig. 2 in the manner of a section, the plan view of the susceptor 2, which stores a plurality of substrate holders 3, each carrying a substrate to be coated,
  • FIG. 3 enlarges the detail III in FIG. 2 without the substrate
  • FIG. 4 shows a section along the line IV-IV in FIG. 2,
  • FIG. 5 shows a substrate holder 3, a transport ring 4 and a cover ring 5 in the manner of a perspective
  • Fig. 6 schematically shows the components of a Vorrich device according to the invention, namely a CVD reactor 1, a Vorratungseinrich device 10 for substrate holder 3, transport rings 4 and heat transfer rings 5 and a transport device 13 designed as a gripper. Description of the embodiments
  • the CVD reactor 1 has an outwardly gas-tight housing which can be evacuated by a pump, not shown. With a gas mixing system not shown, a process gas can be provided which, for example, organometallic compounds of III. Has main group and hydrides of main group V. This process gas is fed together with a carrier gas through a gas inlet element 22 into a process chamber 8 which extends around the gas inlet element 22 arranged in its center.
  • the bottom of the process chamber 8 is formed by an upper side of a susceptor 2 and the ceiling of the process chamber 8 by a ceiling plate extending parallel to it and with a distance from it.
  • a gas outlet element 23 extends around the process chamber 8.
  • a gas nozzle (not shown) in the area of the bottom 25 of the pocket 24, a flushing gas can be brought into the space between the underside of a substrate holder 3 arranged in the pocket 24 and the pocket bottom 25, which forms a gas cushion that supports the substrate holder 3 and drives.
  • a heating device 9 for example an RF heater, IR heater or some other, for example se lamp heater, with which the susceptor 2 can be heated.
  • the heat generated by the heating device 9 flows through the susceptor 2 into the substrate holder 3 and from the substrate holder 3 into a substrate 7 carried by the substrate holder 3 in order to bring its surface to a temperature at which the growth of a layer, in particular a III- V-shift takes place.
  • the substrate holder 3 forms a circumferential step 15 on which a transport ring 4 is mounted.
  • the transport ring 4 surrounds the substrate 7, be seated however a portion that extends below the edge of the substrate 7, so that lifting the transport ring 4 leads to the fact that the sub strate 7 at the edge of a support surface 21 'of an angular recess 21 under attacked will. It can thus be removed from the process chamber 8 by means of the gripper 13 shown schematically in FIG.
  • the ring can be a heat transfer ring.
  • the substrate holder 3 has a circular disk-shaped outline and an upper side facing the substrate 7, which forms a slightly curved base 17. At the edge of the bottom 17, several support projections 18 are vorgese hen that protrude beyond the bottom 17 and carry the substrate 7 at a distance from the bottom 17.
  • the temperature profile or the lateral temperature distribution on the surface of the substrate 7 depends on the heat flow from the heating device 9 to the process chamber 8. Since the ceiling of the process chamber 8 has a lower temperature than the susceptor 2, a steady flow of heat forms between the susceptor 2 and the process chamber ceiling during the deposition process.
  • the heat flow changes when the process parameters, for example the process temperature, the total gas pressure in the process chamber 8, but also a gas flow through the process chamber 8, change.
  • the temperature of more distant bodies for example that of a cover plate 6, can change by the transport ring 4 or the heat transfer ring 5 is arranged.
  • the heat transport properties which are given for example by the geometry and the material, of the transport ring 4 and the heat transfer ring 5 are adapted to the respective process parameters in such a way that the surface temperature on the surface of the Substrate 7 is essentially the same over the entire area.
  • a set consisting of a substrate holder 3, a transport ring 4 and a heat transfer ring 5 one or more first process steps are carried out in which the aforementioned bodies 3, 4, 5 ensure that the temperature profile above the substrate 7 is as flat as possible.
  • the second process step differs from the first process step in that the process parameters are so different that the set of bodies 3, 4, 5 used in the first process step does not result in a flat temperature profile above the substrate 7.
  • At least the transport ring 4 is therefore removed from the process using the gripper 13 together with the substrate 7. chamber 8 removed.
  • the substrate holder 3 can also be removed from the process chamber 8.
  • the substrate 7 is separated from the bodies 3, 4, 5 outside the process chamber and temporarily stored in a buffer 14.
  • the bodies 3, 4, 5 or at least one of them used in the first process step is brought into a storage device 10.
  • This upstream storage device 10 can be heated. It can be tempered to 600 ° C to 800 ° C.
  • bodies 3, 4, 5 are stored, which can be brought to the same stand at which the above-mentioned bodies 3, 4, 5 were in the first process step.
  • a second set of bodies 3, 4, 5 is removed from the storage device 10 and brought into connection with the substrate 7 instead of the first set.
  • the bodies 3, 4, 5 are then inserted together with the substrate 7 into the process chamber 8 with the aid of the gripper 13.
  • the bodies 3, 4, 5 or at least some of them are designed in such a way that they ensure that a flat temperature profile is formed above the substrate 7 with the process parameters of the second process step.
  • a similar exchange of at least one of the bodies 3, 4, 5 for another of the bodies 3, 4, 5 can take place between several process steps, so that each process step is carried out with a set of bodies 3, 4, 5 ophmated for it .
  • the above explanations serve to explain the inventions covered by the application as a whole, which further develop the state of the art at least through the following combinations of features, in which case two, more or all of these combinations of features can also be combined, namely:
  • a method which is characterized in that in a first process step with first process parameters in the process chamber 8, a first layer or layer sequence is deposited on the substrate, the substrate 7 at least one first body 3, 4, 5 in a predetermined spatial relationship is adjacent, the body 3, 4, 5 is removed together with the substrate after the first process step from the process chamber 8, the body 3, 4, 5 is separated from the substrate 7, the substrate 7 in an intermediate storage 14 and the body 3, 4, 5 are temporarily stored in a storage device 10, the second body 3, 4, 5, which is different from the first body 3, 4, 5, is provided from the storage device 10 and the second body 3, 4, 5 is brought into the same spatial relationship to the substrate 7 in the process chamber 8 and in a second process step with two th process parameters in the process chamber 8, a second layer or layer sequence is deposited on the substrate 7.
  • a device for carrying out the method which is characterized by a storage device 10 for the intermediate storage of the first body 3, 4, 5 and a second body which can be used interchangeably with the first body 3, 4, 5 at the predetermined location in the process chamber 8 Body 3, 4,
  • a method or a device which is characterized or which is characterized in that the first or second body is a substrate holder 3, which holds the substrate 7 during the process step, and / or a transport ring 4 is the edge of the Substrate 7 engages under the substrate 7 during the process step or during transport and / or is a cover ring 5 which engages around the edge of the substrate.

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Abstract

The invention relates to a process for thermally treating at least one substrate (7) or for depositing a plurality of layers on at least one substrate (7) in a process chamber (8) of a CVD reactor (1), wherein a number of process steps are carried out one after the other at different temperatures, total gas pressures and/or flow rates, wherein, during at least a first process step, the process chamber (8) contains at least a first body (3, 4, 5) which, on account of its position in the process chamber (8), its outer shape or its characteristics, influences the result of the treatment or the growth of the layer deposited in a process step. In each of the number of process steps, the body influences the temperature profile of the surface of the substrate differently. To avoid this disadvantage, the invention provides that a number of such bodies, each optimized for one of the process steps, are used and are exchanged between the process steps.

Description

Beschreibung description
CVD- Verfahren und CVD-Reaktor mit austauschbaren mit dem Substrat Wärme austauschenden Körpern CVD process and CVD reactor with bodies that can be exchanged with the substrate and exchange heat
Gebiet der Technik Field of technology
[0001] Die Erfindung betrifft ein Verfahren zum thermischen Behandeln mindestens eines Substrates oder zum Abscheiden einer Mehrzahl von Schichten auf mindestens einem Substrat in einer Prozesskammer eines CVD- Reaktors, wobei nacheinander bei verschiedenen Temperaturen, Totalgas drucken und/ oder Strömungsgeschwindigkeiten mehrere Prozessschritte durchgeführt werden, wobei während zumindest eines ersten Prozessschrittes zumindest ein erster Körper in der Prozesskammer angeordnet ist, der aufgrund seiner Position in der Prozesskammer, seiner äußeren Gestalt oder Beschaffenheit das Behandlungsergebnis oder das Wachstum der in einem Prozessschritt abgeschiedenen Schicht beeinflusst. The invention relates to a method for the thermal treatment of at least one substrate or for the deposition of a plurality of layers on at least one substrate in a process chamber of a CVD reactor, wherein several process steps are carried out successively at different temperatures, total gas and / or flow speeds, wherein at least one first body is arranged in the process chamber during at least one first process step, which body influences the treatment result or the growth of the layer deposited in a process step due to its position in the process chamber, its external shape or nature.
[0002] Die Erfindung betrifft darüber hinaus eine Vorrichtung zur Durchfüh rung des Verfahrens mit einem eine Prozesskammer aufweisenden CVD- Reaktor, einem in der Prozesskammer angeordneten Suszeptor zur Aufnahme mindestens eines Substrates, einer Heizeinrichtung, um den Suszeptor und das Substrat auf eine erhöhte Temperatur aufzuheizen, zumindest einem in der Prozesskammer angeordneten ersten Körper, der in einer derartigen Nähe zum Substrat angeordnet ist, dass er einen Wärmefluss zum oder vom Substrat be- einflusst, und mit einer Transporteinrichtung, um zumindest den ersten Körper an einer vorbestimmten Stelle in die Prozesskammer einzusetzen und aus der Prozesskammer zu entnehmen. Stand der Technik The invention also relates to a device for performing the method with a CVD reactor having a process chamber, a susceptor arranged in the process chamber for receiving at least one substrate, a heating device to heat the susceptor and the substrate to an elevated temperature , at least one first body arranged in the process chamber, which is arranged in such proximity to the substrate that it influences a heat flow to or from the substrate, and with a transport device to insert at least the first body at a predetermined point in the process chamber and to be taken from the process chamber. State of the art
[0003] Verfahren und CVD-Reaktoren der zuvor beschriebenen Art werden im Stand der Technik verwendet, um auf insbesondere einkristallinen Halbleiter substraten in aufeinanderfolgenden Prozessschritten Schichten abzuscheiden. Die Schichten werden bei voneinander verschiedenen Prozessparametern abge- schieden, wobei sich die Prozessparameter unter anderem durch die Prozess temperatur und den Totaldruck in der Prozesskammer sowie eine Strömungs geschwindigkeit durch die Prozesskammer unterscheiden können. Die Prozess temperaturen liegen üblicherweise in einem Bereich zwischen 600°C und 800°C. Methods and CVD reactors of the type described above are used in the prior art in order to deposit layers on, in particular, single-crystal semiconductor substrates in successive process steps. The layers are deposited with process parameters that differ from one another, the process parameters being able to differ, among other things, by the process temperature and the total pressure in the process chamber as well as a flow rate through the process chamber. The process temperatures are usually in a range between 600 ° C and 800 ° C.
[0004] Die US 5431737 beschreibt einen Substratträger, der gegen einen ande- ren gleichgestalteten Substratträger ausgetauscht werden kann. In jedem Pro zessschritt ist zwar nicht derselbe aber ein gleichgestalteter Substratträger in der Prozesskammer. [0004] US Pat. No. 5,431,737 describes a substrate carrier which can be exchanged for another substrate carrier of the same configuration. In each process step, although not the same, there is an identically designed substrate carrier in the process chamber.
[0005] Die US 2018/ 0019107 Al offenbart ein Verfahren zum Abscheiden von Schichten in einer Plasmabeschichtungsanlage. Mit einer Greifereinrichtung können Körper in und aus der Prozesskammer gebracht werden. US 2018/0019107 A1 discloses a method for depositing layers in a plasma coating system. Bodies can be brought into and out of the process chamber with a gripper device.
[0006] Die US 2019/ 0088531 Al beschreibt eine Vorrichtung zum Anordnen von ringförmigen Körpern in einer Prozesskammer. US 2019/0088531 A1 describes a device for arranging annular bodies in a process chamber.
[0007] Aus der WO 2019/ 152751 A2 ist die PosiÜonierung eines Zentrierrings in einer Prozesskammer bekannt. [0008] Bei einem gattungsgemäßen Verfahren zum thermischen Behandeln von Substraten, insbesondere zum Abscheiden einer Schichtenfolge auf Sub straten, bei dem zumindest zwei Schichten bei verschiedenen Prozessparame tern durchgeführt werden, haben verschiedene Körper in der Prozesskammer einen Einfluss auf das Temper aturprofil und insbesondere das laterale Tempe raturprofil der Oberfläche des Substrates. Ein gleichmäßiges Temper aturprofil ist für das Abscheiden homogener Schichten erforderlich. Bei den Körpern kann es sich um scheibenförmige Substrathalter handeln, auf denen das Substrat auf liegt oder um Tragringe, die verwendet werden, um das Substrat mit einem Greifer zu handhaben. Derartige Ringe sind beispielsweise bekannt aus der DE 102005 018162 Al oder der DE 102018113400 Al. Die Transportringe ha ben einen radial äußeren Rand, der einen Substrathalter übergreift, sodass die ser Rand von Fingern eines Greifers Untergriffen werden kann. Bei den Körpern kann es sich darüber hinaus auch um Abdeckringe handeln, die beispielsweise von einem Transportring getragen sind und das Substrat umgeben. Diese Kör per werden von einer Heizeinrichtung aufgeheizt, die auch einen Suszeptor, der das Substrat oder den das Substrat tragenden Substrathalter aufheizt. Bei den voneinander verschiedenen Prozessparametern stellt sich innerhalb der Prozesskammer ein individuell von den Prozessparametern abhängiges Tempe raturprofil ein. Dies schließt unterschiedliche Temperaturen oder Temperatur differenzen zwischen Substrat und dem Körper, beispielsweise dem Substrat halter, dem Tragring oder dem Abdeckring ein. Als Folge dessen wird das Sub strat bei den voneinander verschiedenen Prozessschritten in unterschiedlicher Weise lokal gekühlt oder beheizt. Der Wärmefluss vom Substrat bzw. zum Sub strat von einem der Körper ist bei den verschiedenen Prozessparametern ver schieden, was zur Folge hat, dass das Temperaturprofil insbesondere der Ober fläche des Substrates nicht optimal ist. The positioning of a centering ring in a process chamber is known from WO 2019/152751 A2. In a generic method for the thermal treatment of substrates, in particular for the deposition of a sequence of layers on substrates, in which at least two layers are carried out with different process parameters, have different bodies in the process chamber an influence on the temperature profile and in particular the lateral temperature profile of the surface of the substrate. A uniform temperature profile is required for the deposition of homogeneous layers. The bodies can be disk-shaped substrate holders on which the substrate rests, or support rings that are used to handle the substrate with a gripper. Such rings are known, for example, from DE 102005 018162 A1 or DE 102018113400 A1. The transport rings have a radially outer edge that engages over a substrate holder so that fingers of a gripper can grip under this edge. In addition, the bodies can also be cover rings which are carried by a transport ring, for example, and which surround the substrate. This body is heated by a heating device, which also has a susceptor that heats the substrate or the substrate holder carrying the substrate. In the case of the mutually different process parameters, a temperature profile that is individually dependent on the process parameters is established within the process chamber. This includes different temperatures or temperature differences between the substrate and the body, for example the substrate holder, the support ring or the cover ring. As a result, the substrate is locally cooled or heated in different ways in the different process steps. The heat flow from the substrate or to the substrate of one of the bodies is different for the various process parameters, with the result that the temperature profile, in particular of the surface of the substrate, is not optimal.
[0009] Vorrichtungen zum thermischen Behandeln von Substraten mit Bevor ratungskammern zur Bevorratung der Substrate oder anderen bei der Beschich tung innerhalb der Prozesskammer verwendeten Hilfsmittel werden beschrie ben in den US 6,176,667 Bl, US 2012/0247671 Al, US 2015/0340209 Al,Devices for the thermal treatment of substrates with storage chambers for storing the substrates or other aids used in the coating within the process chamber are described in US 6,176,667 B1, US 2012/0247671 A1, US 2015/0340209 A1,
US 2017/0200588 Al und US 2020/0373190 Al. Zusammenfassung der Erfindung US 2017/0200588 Al and US 2020/0373190 Al. Summary of the invention
[0010] Der Erfindung liegt die Aufgabe zugrunde, die zuvor beschriebenen Nachteile zu beheben und insbesondere Maßnahmen zu ergreifen, mit denen das Temper aturprofil der Oberfläche des Substrates bei den verschiedenen Pro zessparametern unterschiedlicher Prozessschritte möglichst homogen ist. [0011] Gelöst wird die Aufgabe durch die in den Ansprüchen angegebene Er findung, wobei die Unteransprüche nicht nur vorteilhafte Weiterbildungen der nebengeordneten Ansprüche, sondern auch eigenständige Lösungen der Auf gabe darstellen. The invention is based on the object of eliminating the disadvantages described above and, in particular, of taking measures with which the temperature profile of the surface of the substrate is as homogeneous as possible in the various process parameters of different process steps. The object is achieved by the invention specified in the claims, the subclaims not only representing advantageous developments of the independent claims, but also independent solutions to the problem.
[0012] Zunächst und im Wesentlichen wird vorgeschlagen, dass zumindest einer der Prozessschritte mit einem ersten Körper und zumindest ein weiterer der Prozessschritte ohne den ersten Körper durchgeführt wird. Dabei kann vorgesehen sein, dass zu einem ersten Körper, beispielsweise einem Substrat halter, einem Transportring oder einem Abdeckring ein zweiter Körper korres pondiert. Der zweite Körper kann nach der Entnahme des ersten Körpers aus der Prozesskammer in die Prozesskammer gebracht werden und dort an der selben Stelle positioniert werden, an der während des ersten Prozessschrittes der erste Körper positioniert war. Wesentlich ist, dass sich die beiden Körper hinsichtlich ihrer Beeinflussung der Temperaturverteilung auf dem Substrat unterscheiden. Die Körper können sich durch ihre Oberfläche unterscheiden, beispielsweise können die Oberflächen andere Reflexivitäten aufweisen. Die Körper können sich auch durch ihren Werkstoff unterscheiden, beispielsweise können die Körper voneinander verschiedene Wärmekapazitäten oder Wärme leitfähigkeiten aufweisen. Ferner können sich die Körper durch ihre Geometrie unterscheiden, beispielsweise können sich zwei Körper, die jeweils einen Ab- deckring ausbilden, durch ihre Materialstärke oder durch ihre Wandungsdicke unterscheiden. Zwei Körper, die jeweils einen Tragring ausbilden, können sich ebenfalls durch ihre Materialstärke oder durch eine Wandungsstärke unter scheiden. Zwei Körper, die jeweils eine Substrathalter ausbilden, können sich ebenfalls durch eine Materialstärke oder durch einen Durchmesser unterschei den. Zwei Substrathalter können sich zudem durch die Gestaltung der zum vom Substrathalter getragenen Substrat weisenden Oberfläche unterscheiden. Diese Oberfläche kann eine andere Rauheit aufweisen. Es ist aber auch möglich, dass Tragvorsprünge, die aus der Oberfläche des Substrathalters hervorragen den, um das Substrat punktuell oder linienförmig zu untergreifen, eine andere Höhe oder eine andere Geometrie aufweisen. Ferner kann vorgesehen sein, dass die Oberfläche, oberhalb der das Substrat gelagert ist, einwärts oder aus wärts gewölbt ist. Der Grad der Wölbung kann verschieden sein. Im Wesentli chen ist vorgesehen, dass sich der erste Körper und der gegen den ersten Kör per austauschbare zweite Körper sich hinsichtlich ihrer im in der Prozesskam mer eingebauten Zustand das Temper aturprofil des Substrates beeinflussende Eigenschaften unterscheiden. Die beiden Körper sind insbesondere derart ver schieden, dass sie sich unter ansonsten gleichen Bedingungen, wie insbesonde re Temperaturen, Gasdrucken und Gasflüssen hinsichtlich ihres Wärmeaustau sches zum Substrat unterscheiden. Der Einsatz der voneinander verschiedenen Körper erfolgt derart, dass jeweils der Körper bei den gegebenen Prozesspara metern die zur Erreichung eines gleichförmigen Temperaturprofils auf der Sub stratoberfläche optimalen Eigenschaften aufweist. Es wird jeweils der mit dem Substrat in optimaler Weise zusammen wirkende Körper verwendet. Es kann vorgesehen sein, dass bei jedem Prozessschritt ein anderer Körper zusammen mit dem Substrat verwendet wird. Es können somit Abdeckringe oder Trans portringe verwendet werden, deren Verwendung zu einer relativen Tempera turverminderung im Randbereich des Substrates führt oder alternativ dazu Abdeckringe oder Transportringe, deren Verwendung zu einer relativen Tem peraturerhöhung im Randbereich des Substrates führt. In analoger Weise kön nen entweder solche Substrathalter verwendet werden, deren Verwendung zu einer relativen Temperaturverminderung im Zentralbereich des Substrates führt oder alternativ dazu Substrathalter, deren Verwendung zu einer relativen Temperaturerhöhung im Zentralbereich des Substrates führt. In einer bevor zugten Ausgestaltung wird der Körper, also insbesondere der Substrathalter, der Transportring oder ein Abdeckring zusammen mit dem Substrat aus der Prozesskammer entnommen. Dies kann mit einer Transporteinrichtung, bei spielsweise mit einem Greifer, automatisiert erfolgen. Eine Wand der Prozess kammer hat hierzu eine Be- und Entladeöffnung, durch die der Greifer hin durchgreifen kann, um das das Substrat aufweisende Ensemble zu greifen. Das Ensemble kann aus dem Substrathalter, dem Transportring und dem Abdeck ring sowie dem Substrat bestehen. Bevorzugt besteht das Ensemble aber nur aus Transportring und Substrat oder Transportring, Substrat und Abdeckring. Außerhalb der Prozesskammer wird zumindest einer dieser Körper, also Sub strathalter, Transportring oder Abdeckring gegen einen anderen, dieselbe Funktion entfaltenden, aber andere körperliche Eigenschaften aufweisenden Körper ersetzt. First and foremost, it is proposed that at least one of the process steps is carried out with a first body and at least one other of the process steps is carried out without the first body. It can be provided that a second body corresponds to a first body, for example a substrate holder, a transport ring or a cover ring. After the first body has been removed from the process chamber, the second body can be brought into the process chamber and positioned there at the same point at which the first body was positioned during the first process step. It is essential that the two bodies differ with regard to their influence on the temperature distribution on the substrate. The bodies can differ in terms of their surface, for example the surfaces can have different reflectivities. The bodies can also differ in their material, for example the bodies can have different heat capacities or heat conductivities from one another. Furthermore, the bodies can differ in their geometry, for example two bodies, which each form a cover ring, can differ in their material thickness or in their wall thickness. Two bodies, each forming a support ring, can become also differ by their material thickness or by a wall thickness. Two bodies, which each form a substrate holder, can also differ in terms of material thickness or diameter. Two substrate holders can also differ in the design of the surface facing the substrate carried by the substrate holder. This surface can have a different roughness. However, it is also possible that support projections which protrude from the surface of the substrate holder in order to reach under the substrate at points or in a linear manner have a different height or a different geometry. Furthermore, it can be provided that the surface above which the substrate is mounted is curved inwards or outwards. The degree of curvature can be different. Essentially, it is provided that the first body and the second body, which can be exchanged for the first body, differ in terms of their properties which influence the temperature profile of the substrate when installed in the process chamber. The two bodies are in particular different in such a way that, under otherwise identical conditions, such as temperatures, gas pressures and gas flows in particular, they differ with regard to their heat exchange to the substrate. The bodies which differ from one another are used in such a way that, given the given process parameters, the body in each case has the optimal properties for achieving a uniform temperature profile on the substrate surface. The body that interacts optimally with the substrate is used in each case. It can be provided that a different body is used together with the substrate in each process step. Thus, cover rings or transport rings can be used, the use of which leads to a relative temperature reduction in the edge region of the substrate or, alternatively, cover rings or transport rings, the use of which leads to a relative temperature increase in the edge region of the substrate. In an analogous manner, either those substrate holders can be used whose use leads to a relative temperature reduction in the central region of the substrate leads or, alternatively, substrate holders, the use of which leads to a relative temperature increase in the central region of the substrate. In a preferred embodiment, the body, that is to say in particular the substrate holder, the transport ring or a cover ring, is removed from the process chamber together with the substrate. This can be done automatically with a transport device, for example with a gripper. For this purpose, one wall of the process chamber has a loading and unloading opening through which the gripper can reach in order to grip the ensemble comprising the substrate. The ensemble can consist of the substrate holder, the transport ring and the cover ring and the substrate. However, the ensemble preferably only consists of a transport ring and substrate or a transport ring, substrate and cover ring. Outside the process chamber, at least one of these bodies, that is to say sub strathalter, transport ring or cover ring, is replaced by another body that performs the same function but has different physical properties.
[0013] Die erfindungs gemäße Vorrichtung besitzt eine Bevorratungseinrich- tung, in der ein oder mehrere der Körper, also beispielsweise Substrathalter, Transportring und Abdeckring, bevorratet werden. Diese Bevorratungseinrich- tung kann beheizt sein. Ihre Temperatur kann im Bereich der Prozesstempera tur, also etwa im Bereich zwischen 600 °C bis 800 °C, liegen. Der aus der Pro zesskammer entnommene Körper wird in die Bevorratungseinrichtung ge bracht. Ein funktio ns gleicher Körper, der aber andere den Wärmefluss zum Substrat beeinflussende Eigenschaften aufweist, wird der Bevorratungseinrich- tung entnommen und zusammen mit dem Substrat in dieselbe oder eine andere Prozesskammer gebracht, wo ein weiterer Prozessschritt durchgeführt wird. Während des Wechsels bzw. Austausches des ersten Körpers gegen den zwei ten Körper kann das Substrat in einem Zwischenspeicher zwischengespeichert werden. Auch dies kann bei erhöhten Temperaturen erfolgen. Es ist vorgese hen, dass während eines Verfahren zum Abscheiden einer Mehrzahl von Schichten wiederholt ein Körper, beispielsweise ein Substrathalter, Transport ring oder Abdeckring mehrfach gegen einen anderen, dieselbe Funktion erfül lenden Körper ausgetauscht wird, wobei mit dem Körper jeweils zumindest ein Prozessschritt durchgeführt wird. The device according to the invention has a storage device in which one or more of the bodies, for example substrate holder, transport ring and cover ring, are stored. This storage device can be heated. Their temperature can be in the range of the process temperature, i.e. in the range between 600 ° C and 800 ° C. The body removed from the process chamber is placed in the storage facility. A functionally identical body, but which has different properties influencing the heat flow to the substrate, is removed from the storage device and brought together with the substrate into the same or another process chamber, where a further process step is carried out. During the change or exchange of the first body for the second body, the substrate can be temporarily stored in a buffer. This can also be done at elevated temperatures. It is envisaged that during a process for depositing a plurality of Layers, a body, for example a substrate holder, transport ring or cover ring, is repeatedly exchanged for another body fulfilling the same function, with at least one process step being carried out with the body.
Kurze Beschreibung der Zeichnungen [0014] Ein Ausführungsbeispiel der Erfindung wird nachfolgend anhand bei gefügter Zeichnungen erläutert. Es zeigen: BRIEF DESCRIPTION OF THE DRAWINGS [0014] An exemplary embodiment of the invention is explained below with reference to the attached drawings. Show it:
Fig. 1 in der Darstellung eines Querschnittes durch eine Achse sche matisch einen CVD-Reaktor 1 mit einem darin angeordneten Suszeptor 2, der von einer Heizeinrichtung 9 beheizt wird, Fig. 1 in the representation of a cross section through an axis cal cally a CVD reactor 1 with a susceptor 2 arranged therein, which is heated by a heating device 9,
Fig. 2 in der Art eines Schnitts die Draufsicht auf den Suszeptor 2, der eine Vielzahl von Substrathaltern 3 lagert, die jeweils ein zu be schichtendes Substrat tragen, Fig. 2 in the manner of a section, the plan view of the susceptor 2, which stores a plurality of substrate holders 3, each carrying a substrate to be coated,
Fig. 3 vergrößert den Ausschnitt III in Figur 2 ohne Substrat, FIG. 3 enlarges the detail III in FIG. 2 without the substrate,
Fig. 4 einen Schnitt gemäß der Linie IV-IV in Figur 2, FIG. 4 shows a section along the line IV-IV in FIG. 2,
Fig. 5 in der Art einer Perspektive einen Substrathalter 3, einen Transportring 4 und einen Abdeckring 5, 5 shows a substrate holder 3, a transport ring 4 and a cover ring 5 in the manner of a perspective,
Fig. 6 schematisch die Bestandteile einer erfindungsgemäßen Vorrich tung, nämlich einen CVD-Reaktor 1, eine Bevorratungseinrich tung 10 für Substrathalter 3, Transportringe 4 und Wärmeüber tragungsringe 5 sowie eine als Greifer gestaltete Transportein richtung 13. Beschreibung der Ausführungsformen Fig. 6 schematically shows the components of a Vorrich device according to the invention, namely a CVD reactor 1, a Vorratungseinrich device 10 for substrate holder 3, transport rings 4 and heat transfer rings 5 and a transport device 13 designed as a gripper. Description of the embodiments
[0015] Der CVD-Reaktor 1 besitzt ein nach außen gasdichtes Gehäuse, welches von einer nicht dargestellten Pumpe evakuierbar ist. Mit einem nicht dargestell ten Gasmischsystem kann ein Prozessgas bereitgestellt werden, welches bei spielsweise metallorganische Verbindungen der III. Hauptgruppe und Hydride der V. Hauptgruppe aufweist. Dieses Prozessgas wird zusammen mit einem Trägergas durch ein Gaseinlassorgan 22 in eine Prozesskammer 8 eingespeist, die sich um das in ihrem Zentrum angeordnete Gaseinlassorgan 22 erstreckt. Der Boden der Prozesskammer 8 wird von einer Oberseite eines Suszeptors 2 und die Decke der Prozesskammer 8 von einer sich parallel und mit einem Ab stand dazu erstreckenden Deckenplatte gebildet. Rings um die Prozesskam mer 8 erstreckt sich ein Gasauslassorgan 23. The CVD reactor 1 has an outwardly gas-tight housing which can be evacuated by a pump, not shown. With a gas mixing system not shown, a process gas can be provided which, for example, organometallic compounds of III. Has main group and hydrides of main group V. This process gas is fed together with a carrier gas through a gas inlet element 22 into a process chamber 8 which extends around the gas inlet element 22 arranged in its center. The bottom of the process chamber 8 is formed by an upper side of a susceptor 2 and the ceiling of the process chamber 8 by a ceiling plate extending parallel to it and with a distance from it. A gas outlet element 23 extends around the process chamber 8.
[0016] In der zur Prozesskammer 8 weisenden Oberseite des Suszeptors 2 be finden sich, angeordnet auf einer Kreisbogenlinie um das Zentrum der Prozess kammer 8, eine Vielzahl von Taschen 24, in denen jeweils ein Substrathalter 3 angeordnet ist. Mittels einer nicht dargestellten Gasdüse im Bereich des Bo dens 25 der Tasche 24 kann ein Spülgas in den Zwischenraum zwischen Unter seite eines in der Tasche 24 angeordneten Substrathalters 3 und den Taschen boden 25 gebracht werden, welches ein Gaspolster ausbildet, das den Substrat halter 3 lagert und drehantreibt. In the top of the susceptor 2 facing the process chamber 8, a plurality of pockets 24, in each of which a substrate holder 3 is arranged, are arranged on a circular arc line around the center of the process chamber 8. By means of a gas nozzle (not shown) in the area of the bottom 25 of the pocket 24, a flushing gas can be brought into the space between the underside of a substrate holder 3 arranged in the pocket 24 and the pocket bottom 25, which forms a gas cushion that supports the substrate holder 3 and drives.
[0017] Unterhalb des Suszeptors 2 erstreckt sich eine Heizeinrichtung 9, bei spielsweise eine RF-Heizung, IR-Heizung oder eine anderweitige, beispielswei se Lampenheizung, mit der der Suszeptor 2 aufgeheizt werden kann. Die von der Heizeinrichtung 9 erzeugte Wärme fließt durch den Suszeptor 2 in den Sub strathalter 3 und vom Substrathalter 3 in ein vom Substrathalter 3 getragenes Substrat 7, um dessen Oberfläche auf eine Temperatur zu bringen, bei der das Wachstum einer Schicht, insbesondere einer III-V-Schicht stattfindet. [0018] Der Substrathalter 3 bildet eine ringsumlaufende Stufe 15 aus, auf der ein Transportring 4 gelagert ist. Der Transportring 4 umgibt das Substrat 7, be sitzt allerdings einen Abschnitt, der sich unterhalb des Randes des Substrates 7 erstreckt, sodass ein Anheben des Transportrings 4 dazu führt, dass das Sub strat 7 am Rande von einer Auflagefläche 21' einer Winkelaussparung 21 Unter griffen wird. Es kann somit mittels des in der Figur 6 schematisch dargestellten Greifers 13, dessen Arme einen Umfangs vor sprung 19 des Transportrings 4 un tergreifen, aus der Prozesskammer 8 entnommen werden. Below the susceptor 2 extends a heating device 9, for example an RF heater, IR heater or some other, for example se lamp heater, with which the susceptor 2 can be heated. The heat generated by the heating device 9 flows through the susceptor 2 into the substrate holder 3 and from the substrate holder 3 into a substrate 7 carried by the substrate holder 3 in order to bring its surface to a temperature at which the growth of a layer, in particular a III- V-shift takes place. The substrate holder 3 forms a circumferential step 15 on which a transport ring 4 is mounted. The transport ring 4 surrounds the substrate 7, be seated however a portion that extends below the edge of the substrate 7, so that lifting the transport ring 4 leads to the fact that the sub strate 7 at the edge of a support surface 21 'of an angular recess 21 under attacked will. It can thus be removed from the process chamber 8 by means of the gripper 13 shown schematically in FIG.
[0019] Eine beim Ausführungsbeispiel vom Umfangs vor sprung 19 ausgebilde te Stufe 19' bildet eine Lagerfläche für einen Ring 5. Bei dem Ring kann es sich um einen Wärmeübertragungsring handeln. Zwischen dem Ring 5 und dem Rand des Substrates 7 erstreckt sich ein Steg 20, mit dem der Ring 5 fixiert ist. One in the exemplary embodiment from the circumference before jump 19 te step 19 'forms a bearing surface for a ring 5. The ring can be a heat transfer ring. A web 20, with which the ring 5 is fixed, extends between the ring 5 and the edge of the substrate 7.
[0020] Der Substrathalter 3 besitzt einen kreisscheibenförmigen Grundriss und eine zum Substrat 7 weisende Oberseite, die einen leicht gewölbten Boden 17 ausbildet. Am Rande des Bodens 17 sind mehrere Tragvorsprünge 18 vorgese hen, die über den Boden 17 hinausragen und das Substrat 7 in einem Abstand zum Boden 17 tragen. The substrate holder 3 has a circular disk-shaped outline and an upper side facing the substrate 7, which forms a slightly curved base 17. At the edge of the bottom 17, several support projections 18 are vorgese hen that protrude beyond the bottom 17 and carry the substrate 7 at a distance from the bottom 17.
[0021] Das Temperaturprofil bzw. die laterale Temperaturverteilung auf der Oberfläche des Substrates 7 hängt vom Wärmefluss von der Heizeinrichtung 9 zur Prozesskammer 8 ab. Da die Decke der Prozesskammer 8 eine geringere Temperatur aufweist als der Suszeptor 2, bildet sich während des Abschei deprozesses ein stetiger Wärmefluss zwischen Suszeptor 2 und Prozesskam merdecke aus. Der Wärmefluss ändert sich, wenn sich die Prozessparameter, beispielsweise die Prozesstemperatur, der Totalgasdruck in der Prozesskam mer 8, aber auch ein Gasstrom durch die Prozesskammer 8 ändern. Einherge hend damit ändern sich auch die lokalen Temperaturen des Suszeptors 2, des Substrathalters 3 und insbesondere die laterale Temperaturverteilung des Bo dens 17, und die Temperaturen bzw. Temperaturverteilungen des Transport rings 4 und des von ihm getragenen Wärmeübertragungsring 5. Es kann sich darüber hinaus auch die Temperatur entfernterer Körper, beispielsweise die einer Abdeckplatte 6 ändern, die um den Transportring 4 bzw. den Wärme übertragungsring 5 angeordnet ist. The temperature profile or the lateral temperature distribution on the surface of the substrate 7 depends on the heat flow from the heating device 9 to the process chamber 8. Since the ceiling of the process chamber 8 has a lower temperature than the susceptor 2, a steady flow of heat forms between the susceptor 2 and the process chamber ceiling during the deposition process. The heat flow changes when the process parameters, for example the process temperature, the total gas pressure in the process chamber 8, but also a gas flow through the process chamber 8, change. As a result, the local temperatures of the susceptor 2, des Substrate holder 3 and in particular the lateral temperature distribution of the Bo dens 17, and the temperatures or temperature distributions of the transport ring 4 and the heat transfer ring 5 carried by it. In addition, the temperature of more distant bodies, for example that of a cover plate 6, can change by the transport ring 4 or the heat transfer ring 5 is arranged.
[0022] Der Verlauf der Wölbung des Bodens 17, die Wärmetransporteigen schaften, die beispielsweise durch die Geometrie und den Werkstoff gegeben sind, des Transportrings 4 und des Wärmeübertragungsrings 5 sind an die je- weiligen Prozessparameter derart angepasst, dass die Oberflächentemperatur auf der Oberfläche des Substrates 7 im Wesentlichen über die gesamte Fläche dieselbe ist. Mit einem derartigen Satz bestehend aus einem Substrathalter 3, einem Transportring 4 und einem Wärmeübertragungsring 5 werden ein oder mehrere erste Prozessschritte durchgeführt, bei denen die zuvor erwähnten Körper 3, 4, 5 für ein möglichst flaches Temper aturprofil oberhalb des Substra tes 7 sorgen. The course of the curvature of the bottom 17, the heat transport properties, which are given for example by the geometry and the material, of the transport ring 4 and the heat transfer ring 5 are adapted to the respective process parameters in such a way that the surface temperature on the surface of the Substrate 7 is essentially the same over the entire area. With such a set consisting of a substrate holder 3, a transport ring 4 and a heat transfer ring 5, one or more first process steps are carried out in which the aforementioned bodies 3, 4, 5 ensure that the temperature profile above the substrate 7 is as flat as possible.
[0023] Zwischen dem mindestens einen ersten Prozessschritt und mindestens einem zweiten Prozessschritt werden zumindest einige oder nur einer der Kör per 3, 4, 5 gegen andere Körper 3, 4, 5 ausgetauscht. Der zweite Prozessschritt unterscheidet sich vom ersten Prozessschritt dadurch, dass die Prozessparame ter derart verschieden sind, dass sich mit dem im ersten Prozessschritt verwen deten Satz der Körper 3, 4, 5 kein flaches Temperaturprofil oberhalb des Sub strates 7 einstellt. Between the at least one first process step and at least one second process step, at least some or only one of the bodies 3, 4, 5 are exchanged for other bodies 3, 4, 5. The second process step differs from the first process step in that the process parameters are so different that the set of bodies 3, 4, 5 used in the first process step does not result in a flat temperature profile above the substrate 7.
[0024] Nach dem ersten Prozessschritt wird deshalb zumindest der Transport- ring 4 mithilfe des Greifers 13 zusammen mit dem Substrat 7 aus der Prozess- kammer 8 entnommen. Es kann zusätzlich auch der Substrathalter 3 aus der Prozesskammer 8 entnommen werden. After the first process step, at least the transport ring 4 is therefore removed from the process using the gripper 13 together with the substrate 7. chamber 8 removed. In addition, the substrate holder 3 can also be removed from the process chamber 8.
[0025] Das Substrat 7 wird von den Körpern 3, 4, 5 außerhalb der Prozess kammer getrennt und in einem Zwischenspeicher 14 zwischengespeichert. Die im ersten Prozessschritt verwendeten Körper 3, 4, 5 oder zumindest einer da von wird in eine Bevorratungseinrichtung 10 gebracht. Diese vor Bevorratungs einrichtung 10 kann beheizt sein. Sie kann auf 600 °C bis 800 °C temperiert sein. In der Bevorratungseinrichtung 10 werden Körper 3, 4, 5 bevorratet, die an die selbe Stehe gebracht werden können, an der im ersten Prozessschritt die oben genannten Körper 3, 4, 5 gewesen sind. Die dort bevorrateten Körper unter scheiden sich allerdings hinsichtlich ihrer den Wärmefluss zum Substrat oder vom Substrat beeinflussenden Eigenschaften. The substrate 7 is separated from the bodies 3, 4, 5 outside the process chamber and temporarily stored in a buffer 14. The bodies 3, 4, 5 or at least one of them used in the first process step is brought into a storage device 10. This upstream storage device 10 can be heated. It can be tempered to 600 ° C to 800 ° C. In the storage device 10, bodies 3, 4, 5 are stored, which can be brought to the same stand at which the above-mentioned bodies 3, 4, 5 were in the first process step. The bodies stored there differ, however, with regard to their properties which influence the heat flow to the substrate or from the substrate.
[0026] Aus der Bevorratungseinrichtung 10 wird zur Durchführung des zwei ten Prozessschrittes ein zweiter Satz Körper 3, 4, 5 entnommen und anstelle des ersten Satzes mit dem Substrat 7 in Verbindung gebracht. Die Körper 3, 4, 5 werden dann zusammen mit dem Substrat 7 in die Prozesskammer 8 mithilfe des Greifers 13 eingesetzt. Die Körper 3, 4, 5 oder zumindest einige davon sind derart ausgestaltet, dass sie bei den Prozessparametern des zweiten Prozess schrittes für ein sich Ausbilden eines flachen Temper aturprofils oberhalb des Substrates 7 sorgen. To carry out the second process step, a second set of bodies 3, 4, 5 is removed from the storage device 10 and brought into connection with the substrate 7 instead of the first set. The bodies 3, 4, 5 are then inserted together with the substrate 7 into the process chamber 8 with the aid of the gripper 13. The bodies 3, 4, 5 or at least some of them are designed in such a way that they ensure that a flat temperature profile is formed above the substrate 7 with the process parameters of the second process step.
[0027] Ein derarhger Austausch von zumindest einem der Körper 3, 4, 5 gegen eine anderen der Körper 3, 4, 5 kann zwischen mehreren Prozessschritten statt finden, sodass jeder Prozessschritt mit einem für ihn ophmierten Satz Körper 3, 4, 5 durchgeführt wird. [0028] Die vorstehenden Ausführungen dienen der Erläuterung der von der Anmeldung insgesamt erfassten Erfindungen, die den Stand der Technik zu mindest durch die folgenden Merkmalskombinationen jeweils auch eigenstän dig weiterbilden, wobei zwei, mehrere oder alle dieser Merkmalskombinatio nen auch kombiniert sein können, nämlich: A similar exchange of at least one of the bodies 3, 4, 5 for another of the bodies 3, 4, 5 can take place between several process steps, so that each process step is carried out with a set of bodies 3, 4, 5 ophmated for it . The above explanations serve to explain the inventions covered by the application as a whole, which further develop the state of the art at least through the following combinations of features, in which case two, more or all of these combinations of features can also be combined, namely:
[0029] Ein Verfahren, das dadurch gekennzeichnet ist, dass der erste Körper 3, 4, 5 in zumindest einem zweiten Prozessschritt nicht in der Prozesskammer 8 angeordnet ist. A method which is characterized in that the first body 3, 4, 5 is not arranged in the process chamber 8 in at least one second process step.
[0030] Ein Verfahren, das dadurch gekennzeichnet ist, dass der zumindest ei ne erste Körper 3, 4, 5 zwischen dem ersten Prozess-schritt und dem zweiten Prozessschritt gegen einen zweiten Körper 3, 4, 5 ausgetauscht wird, wobei der zweite Körper 3, 4, 5 an derselben Position in der Prozesskammer 8 angeordnet wird und sich durch seine äußere Gestalt oder Beschaffenheit vom ersten Kör per 3, 4, 5 unterscheidet und/ oder dass eine Heizeinrichtung 9 zur Temperie rung des Substrates 7 vorgesehen ist, die auch die ersten und zweiten Körper 3, 4, 5 temperiert, wobei die ersten und zweiten Körper 3, 4, 5 derart in der Pro zesskammer 8 angeordnet sind, dass ein erster Wärmeaustausch zwischen dem Substrat 7 und dem ersten Körper 3, 4, 5 sich von einem zweiten Wärmeaus tausch zwischen dem Substrat 7 und dem zweiten Körper 3, 4, 5 unterscheidet. A method which is characterized in that the at least one first body 3, 4, 5 is exchanged for a second body 3, 4, 5 between the first process step and the second process step, the second body 3 , 4, 5 is arranged in the same position in the process chamber 8 and differs from the first body 3, 4, 5 by its external shape or nature and / or that a heating device 9 is provided for tempering the substrate 7, which also the first and second bodies 3, 4, 5 tempered, the first and second bodies 3, 4, 5 being arranged in the process chamber 8 in such a way that a first heat exchange between the substrate 7 and the first body 3, 4, 5 differs from a second heat exchange between the substrate 7 and the second body 3, 4, 5 differs.
[0031] Ein Verfahren, das dadurch gekennzeichnet ist, dass die Körper 3, 4, 5 bei der Durchführung des Prozessschrittes einen körperlichen Kontakt zum Substrat 7 haben oder in unmittelbarer Nähe des Substrates 7 angeordnet sind. A method which is characterized in that the bodies 3, 4, 5 are in physical contact with the substrate 7 when the process step is carried out or are arranged in the immediate vicinity of the substrate 7.
[0032] Ein Verfahren, das dadurch gekennzeichnet ist, dass der erste Körper 3, 4, 5 nach Durchführung des ersten Prozessschrittes zusammen mit dem Sub strat 7 aus dem CVD-Reaktor 1 entnommen wird und gegen den zweiten Kör- per 3, 4, 5 außerhalb des CVD-Reaktors 1 gegen den zweiten Körper 3, 4, 5 aus getauscht wird und das Substrat 7 zusammen mit dem zweiten Körper 3, 4, 5 in denselben oder einen anderen CVD-Reaktor 1 gebracht wird und/ oder, dass in den voneinander verschiedenen Prozessschritten jeweils der bei den gegebenen Prozessparametern die zur Erreichung eines gleichförmigen Temper aturprofils auf der Substratoberfläche optimalen Eigenschaften aufweisende Körper ver wendet wird. A method which is characterized in that the first body 3, 4, 5, after the first process step has been carried out, is removed from the CVD reactor 1 together with the substrate 7 and pressed against the second body. by 3, 4, 5 outside the CVD reactor 1 is exchanged for the second body 3, 4, 5 and the substrate 7 is brought together with the second body 3, 4, 5 into the same or a different CVD reactor 1 and / or that in the process steps which are different from one another, the body having the optimum properties for achieving a uniform temperature profile on the substrate surface for the given process parameters is used.
[0033] Ein Verfahren, das dadurch gekennzeichnet ist, dass der erste Körper 3, 4, 5 nach seiner Entnahme aus der Prozesskammer 8 in eine Bevorratungsein richtung 10 gebracht wird, in welcher der zweite Körper 3, 4, 5 bevorratet wird, und dass der zweite Körper 3, 4, 5 aus der Bevorratungseinrichtung 10 ent nommen und in die Prozesskammer 8 eingesetzt wird, und/ oder dass eine Transporteinrichtung 13 vorgesehen ist, mit der der erste und zweite Körper 3, 4, 5 zwischen einer Bevorratungseinrichtung 10 und der Prozesskammer 8 transportiert wird. A method which is characterized in that the first body 3, 4, 5 is brought after its removal from the process chamber 8 in a storage device 10, in which the second body 3, 4, 5 is stored, and that the second body 3, 4, 5 is taken ent from the storage device 10 and inserted into the process chamber 8, and / or that a transport device 13 is provided with which the first and second body 3, 4, 5 between a storage device 10 and the Process chamber 8 is transported.
[0034] Ein Verfahren, das dadurch gekennzeichnet ist, dass in einem ersten Prozessschritt bei ersten Prozessparametern in der Prozesskammer 8 eine erste Schicht oder Schichtenfolge auf das Substrat abgeschieden wird, wobei dem Substrat 7 mindestens ein erster Körper 3, 4, 5 in einer vorgegebenen räumli chen Beziehung benachbart ist, der Körper 3, 4, 5 zusammen mit dem Substrat nach dem ersten Prozessschritt aus der Prozesskammer 8 entnommen wird, der Körper 3, 4, 5 vom Substrat 7 getrennt wird, das Substrat 7 in einem Zwischen speicher 14 und der Körper 3, 4, 5 in einer Bevorratungseinrichtung 10 zwi schengespeichert werden, der zweite Körper 3, 4, 5, der vom ersten Körper 3, 4, 5 verschieden ist, aus der Bevorratungseinrichtung 10 bereitgestellt wird und der zweite Körper 3, 4, 5 in dieselbe räumliche Beziehung zum Substrat 7 in der Prozesskammer 8 gebracht wird und in einem zweiten Prozessschritt bei zwei- ten Prozessparametern in der Prozesskammer 8 eine zweite Schicht oder Schichtenfolge auf das Substrat 7 abgeschieden wird. A method, which is characterized in that in a first process step with first process parameters in the process chamber 8, a first layer or layer sequence is deposited on the substrate, the substrate 7 at least one first body 3, 4, 5 in a predetermined spatial relationship is adjacent, the body 3, 4, 5 is removed together with the substrate after the first process step from the process chamber 8, the body 3, 4, 5 is separated from the substrate 7, the substrate 7 in an intermediate storage 14 and the body 3, 4, 5 are temporarily stored in a storage device 10, the second body 3, 4, 5, which is different from the first body 3, 4, 5, is provided from the storage device 10 and the second body 3, 4, 5 is brought into the same spatial relationship to the substrate 7 in the process chamber 8 and in a second process step with two th process parameters in the process chamber 8, a second layer or layer sequence is deposited on the substrate 7.
[0035] Eine Vorrichtung zur Durchführung des Verfahrens, die gekennzeich net ist durch eine Bevorratungseinrichtung 10 zur Zwischenlagerung des ersten Körpers 3, 4, 5 und einen gegen den ersten Körper 3, 4, 5 austauschbar an der vorbestimmten Stelle in der Prozesskammer 8 einsetzbaren zweiten Körper 3, 4,A device for carrying out the method, which is characterized by a storage device 10 for the intermediate storage of the first body 3, 4, 5 and a second body which can be used interchangeably with the first body 3, 4, 5 at the predetermined location in the process chamber 8 Body 3, 4,
5. 5.
[0036] Eine Vorrichtung, die dadurch gekennzeichnet ist, dass die Transport einrichtung 13 eine Greifereinrichtung aufweist, mit der der erste Körper 3, 4, 5 und/ oder der zweite Körper 3, 4, 5 zusammen mit dem Substrat 7 aus der Pro zesskammer 8 heraus und in die Bevorratungseinrichtung 10 gebracht werden kann. A device which is characterized in that the transport device 13 has a gripper device with which the first body 3, 4, 5 and / or the second body 3, 4, 5 together with the substrate 7 from the process chamber 8 can be brought out and into the storage device 10.
[0037] Ein Verfahren oder eine Vorrichtung, das oder die dadurch gekenn zeichnet ist, dass der erste oder zweite Körper ein Substrathalter 3 ist, der wäh rend des Prozessschrittes das Substrat 7 haltert, und/ oder ein Transportring 4 ist, der den Rand des Substrates 7 während des Prozessschrittes oder während eines Transportes des Substrates 7 untergreift und/ oder ein Abdeckring 5 ist, der den Rand des Substrates um greift. A method or a device, which is characterized or which is characterized in that the first or second body is a substrate holder 3, which holds the substrate 7 during the process step, and / or a transport ring 4 is the edge of the Substrate 7 engages under the substrate 7 during the process step or during transport and / or is a cover ring 5 which engages around the edge of the substrate.
[0038] Alle offenbarten Merkmale sind (für sich, aber auch in Kombination untereinander) erfindungswesentlich. In die Offenbarung der Anmeldung wird hiermit auch der Offenbarungsinhalt der zugehörigen/ beigefügten Prioritäts unterlagen (Abschrift der Voranmeldung) vollinhaltlich mit einbezogen, auch zu dem Zweck, Merkmale dieser Unterlagen in Ansprüche vorliegender An meldung mit aufzunehmen. Die Unteransprüche charakterisieren, auch ohne die Merkmale eines in Bezug genommenen Anspruchs, mit ihren Merkmalen eigenständige erfinderische Weiterbildungen des Standes der Technik, insbe sondere um auf Basis dieser Ansprüche Teilanmeldungen vorzunehmen. Die in jedem Anspruch angegebene Erfindung kann zusätzlich ein oder mehrere der in der vorstehenden Beschreibung, insbesondere mit Bezugsziffern versehene und/ oder in der Bezugsziffernliste angegebene Merkmale aufweisen. Die Er findung betrifft auch Gestaltungsformen, bei denen einzelne der in der vorste henden Beschreibung genannten Merkmale nicht verwirklicht sind, insbeson dere soweit sie erkennbar für den jeweiligen Verwendungszweck entbehrlich sind oder durch andere technisch gleichwirkende Mittel ersetzt werden kön- nen. All the features disclosed are essential to the invention (individually, but also in combination with one another). In the disclosure of the application, the disclosure content of the associated / attached priority documents (copy of the previous application) is hereby fully included, also for the purpose of including features of these documents in the claims of the present application. The subclaims characterize with their features, even without the features of a referenced claim independent inventive developments of the prior art, in particular special to make divisional applications on the basis of these claims. The invention specified in each claim can additionally have one or more of the features provided in the above description, in particular provided with reference numbers and / or specified in the list of reference numbers. The invention also relates to design forms in which some of the features mentioned in the preceding description are not implemented, in particular if they are recognizable for the respective purpose or can be replaced by other technically equivalent means.
Liste der Bezugszeichen List of reference signs
1 CVD-Reaktor 24 Tasche1 CVD reactor 24 pocket
2 Suszeptor 25 Taschenboden2 susceptor 25 pocket bottom
3 Substrathalter 3 substrate holders
4 Transportring 4 transport ring
5 Wärmeübertragungsring 5 heat transfer ring
6 Abdeckplatte 6 cover plate
7 Substrat 7 substrate
8 Prozesskammer 8 process chamber
9 Heizeinrichtung 9 heating device
10 Bevorratungseinrichtung 10 Storage facility
11 Beladeöffnung 11 Loading opening
12 Tor 12 gate
13 Transporteinrichtung 13 Transport device
14 Zwischenspeicher 14 buffers
15 Stufe 15 stage
16 Sockel 16 sockets
17 Boden 17 floor
18 Tragvorsprung 18 support projection
19 Umfangs vor sprung 19' Stufe 19 circumference before jump 19 'step
20 Steg 20 bridge
21 Winkelaussparung 21' Auflagefläche 21 Angle recess 21 'support surface
22 Gaseinlassorgan 22 gas inlet device
23 Gasauslassorgan 23 gas outlet device

Claims

Ansprüche Expectations
Verfahren zum thermischen Behandeln mindestens eines Substrates (7) oder zum Abscheiden einer Mehrzahl von Schichten auf mindestens einem Substrat (7) in einer Prozesskammer (8) eines CVD-Reaktors (1), wobei nacheinander bei verschiedenen Temperaturen, Totalgasdrucken und/ oder Strömungsgeschwindigkeiten mehrere Prozessschritte durch geführt werden, wobei während zumindest eines ersten Prozessschrittes zumindest ein erster Körper (3, 4, 5) in der Prozesskammer (8) angeordnet ist, der aufgrund seiner Position in der Prozesskammer (8), seiner äußeren Gestalt oder Beschaffenheit das Behandlungsergebnis oder das Wachstum der in einem Prozessschritt abgeschiedenen Schicht beeinflusst, dadurch gekennzeichnet, dass der erste Körper (3, 4, 5) in zumindest einem zweiten Prozessschritt nicht in der Prozesskammer (8) angeordnet ist. Method for the thermal treatment of at least one substrate (7) or for the deposition of a plurality of layers on at least one substrate (7) in a process chamber (8) of a CVD reactor (1), with several successively at different temperatures, total gas pressures and / or flow rates Process steps are carried out, with at least one first body (3, 4, 5) being arranged in the process chamber (8) during at least one first process step, which due to its position in the process chamber (8), its external shape or nature, the treatment result or influences the growth of the layer deposited in a process step, characterized in that the first body (3, 4, 5) is not arranged in the process chamber (8) in at least a second process step.
Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass der zumindest eine erste Körper (3, 4, 5) zwischen dem ersten Prozessschritt und dem zweiten Prozessschritt gegen einen zweiten Körper (3, 4, 5) ausgetauscht wird, wobei der zweite Körper (3, 4, 5) an derselben Position in der Pro zesskammer (8) angeordnet wird und sich durch seine äußere Gestalt oder Beschaffenheit vom ersten Körper (3, 4, 5) unterscheidet und/ oder dass eine Heizeinrichtung (9) zur Temperierung des Substrates (7) vorgesehen ist, die auch die ersten und zweiten Körper (3, 4, 5) temperiert, wobei die ersten und zweiten Körper (3, 4, 5) derart in der Prozesskammer (8) ange ordnet sind, dass ein erster Wärmeaustausch zwischen dem Substrat (7) und dem ersten Körper (3, 4, 5) sich von einem zweiten Wärmeaustausch zwischen dem Substrat (7) und dem zweiten Körper (3, 4, 5) unterscheidet. Method according to Claim 1, characterized in that the at least one first body (3, 4, 5) is exchanged for a second body (3, 4, 5) between the first process step and the second process step, the second body (3, 4, 5) is arranged in the same position in the process chamber (8) and differs from the first body (3, 4, 5) by its external shape or nature and / or that a heating device (9) for temperature control of the substrate (7 ) is provided, which also controls the temperature of the first and second bodies (3, 4, 5), the first and second bodies (3, 4, 5) being arranged in the process chamber (8) in such a way that a first heat exchange between the Substrate (7) and the first body (3, 4, 5) differs from a second heat exchange between the substrate (7) and the second body (3, 4, 5).
Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, dass die Körper (3, 4, 5) bei der Durchführung des Prozessschrit- tes einen körperlichen Kontakt zum Substrat (7) haben oder in unmittelba rer Nähe des Substrates (7) angeordnet sind. Method according to one of the preceding claims, characterized in that the bodies (3, 4, 5) when performing the process step tes have physical contact with the substrate (7) or are arranged in the immediate vicinity of the substrate (7).
4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, dass der erste Körper (3, 4, 5) nach Durchführung des ersten Prozessschrittes zusammen mit dem Substrat (7) aus dem CVD Reaktor (1) entnommen wird und gegen den zweiten Körper (3, 4, 5) außerhalb des CVD-Reaktors (1) gegen den zweiten Körper (3, 4, 5) ausgetauscht wird und das Substrat (7) zusammen mit dem zweiten Körper (3, 4, 5) in den selben oder einen anderen CVD-Reaktor (1) gebracht wird. 5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, dass in den voneinander verschiedenen Prozessschritten jeweils der bei den gegebenen Prozessparametern die zur Erreichung eines gleichförmigen Temper aturprofils auf der Substratoberfläche optimalen Eigenschaften aufweisende Körper verwendet wird. 6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, dass der erste Körper (3, 4, 5) nach seiner Entnahme aus der Pro zesskammer (8) in eine Bevorratungseinrichtung (10) gebracht wird, in welcher der zweite Körper (3, 4, 5) bevorratet wird, und dass der zweite Körper (3, 4, 5) aus der Bevorratungseinrichtung (10) entnommen und in die Prozesskammer (8) eingesetzt wird. 4. The method according to any one of the preceding claims, characterized in that the first body (3, 4, 5) after performing the first process step together with the substrate (7) is removed from the CVD reactor (1) and against the second body (3, 4, 5) outside the CVD reactor (1) is exchanged for the second body (3, 4, 5) and the substrate (7) together with the second body (3, 4, 5) in the same or another CVD reactor (1) is brought. 5. The method according to any one of the preceding claims, characterized in that in the mutually different process steps in each case the body having optimal properties for the given process parameters to achieve a uniform temperature profile on the substrate surface is used. 6. The method according to any one of the preceding claims, characterized in that the first body (3, 4, 5) after its removal from the process chamber (8) is brought into a storage device (10) in which the second body (3 , 4, 5) is stored, and that the second body (3, 4, 5) is removed from the storage device (10) and inserted into the process chamber (8).
7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, dass eine Transporteinrichtung (13) vorgesehen ist, mit der der erste und zweite Körper (3, 4, 5) zwischen einer Bevorratungseinrich tung (10) und der Prozesskammer (8) transportiert wird. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, dass in einem ersten Prozessschritt bei ersten Prozessparametern in der Prozesskammer (8) eine erste Schicht oder Schichtenfolge auf das Substrat abgeschieden wird, wobei dem Substrat (7) mindestens ein erster Körper (3, 4, 5) in einer vorgegebenen räumlichen Beziehung benachbart ist, der Körper (3, 4, 5) zusammen mit dem Substrat nach dem ersten Pro zessschritt aus der Prozesskammer (8) entnommen wird, der Körper (3, 4, 5) vom Substrat (7) getrennt wird, das Substrat (7) in einem Zwischenspei cher (14) und der Körper (3, 4, 5) in einer Bevorratungseinrichtung (10) zwischengespeichert werden, der zweite Körper (3, 4, 5), der vom ersten Körper (3, 4, 5) verschieden ist, aus der Bevorratungseinrichtung (10) be reitgestellt wird und der zweite Körper (3, 4, 5) in dieselbe räumliche Be ziehung zum Substrat (7) in der Prozesskammer (8) gebracht wird und in einem zweiten Prozessschritt bei zweiten Prozessparametern in der Pro zesskammer (8) eine zweite Schicht oder Schichtenfolge auf das Sub strat (7) abgeschieden wird. 7. The method according to any one of the preceding claims, characterized in that a transport device (13) is provided with which the first and second bodies (3, 4, 5) are transported between a Vorratungseinrich device (10) and the process chamber (8) will. Method according to one of the preceding claims, characterized in that in a first process step with first process parameters in the process chamber (8) a first layer or layer sequence is deposited on the substrate, the substrate (7) at least one first body (3, 4 , 5) is adjacent in a predetermined spatial relationship, the body (3, 4, 5) together with the substrate is removed from the process chamber (8) after the first process step, the body (3, 4, 5) from the substrate ( 7) is separated, the substrate (7) in an intermediate storage device (14) and the body (3, 4, 5) are temporarily stored in a storage device (10), the second body (3, 4, 5) from the first Body (3, 4, 5) is different, is provided from the storage device (10) and the second body (3, 4, 5) is brought into the same spatial relationship to the substrate (7) in the process chamber (8) and in a second process step with second process parameters i In the process chamber (8) a second layer or layer sequence is deposited on the substrate (7).
Vorrichtung zur Durchführung des Verfahrens gemäß einem der vorher gehenden Ansprüche, mit einem eine Prozesskammer (8) aufweisenden CVD-Reaktor (1), einem in der Prozesskammer (8) angeordneten Suszep- tor (2) zur Aufnahme mindestens eines Substrates (7), einer Heizeinrich- tung (9), um den Suszeptor (2) und das Substrat (7) auf eine erhöhte Tem peratur aufzuheizen, zumindest einem in der Prozesskammer (8) ange ordneten ersten Körper (3, 4, 5), der in einer derartigen Nähe zum Sub strat (7) angeordnet ist, dass er einen Wärmefluss zum oder vom Sub strat (7) beeinflusst, und mit einer Transporteinrichtung (13), um zumin dest den ersten Körper (3, 4, 5) an einer vorbestimmten Stelle in die Pro zesskammer (8) einzusetzen und aus der Prozesskammer (8) zu entneh men, und mit einer Bevorratungseinrichtung (10) zur Zwischenlagerung des ersten Körpers (3, 4, 5), in der ein gegen den ersten Körper (3, 4, 5) austauschbarer an derselben vorbestimmten Stelle in der Prozesskam mer (8) einsetzbarer zweiter Körper (3, 4, 5) bevorratet wird, dadurch ge kennzeichnet, dass sich die beiden Körper durch den Wärmefluss zum Substrat beeinflussenden Eigenschaften unterscheiden. 10. Vorrichtung nach Anspruch 9, dadurch gekennzeichnet, dass die Trans porteinrichtung (13) eine Greifereinrichtung aufweist, mit der der erste Körper (3, 4, 5). Device for carrying out the method according to one of the preceding claims, with a CVD reactor (1) having a process chamber (8), a susceptor (2) arranged in the process chamber (8) for receiving at least one substrate (7), a heating device (9) to heat the susceptor (2) and the substrate (7) to an elevated temperature, at least one in the process chamber (8) arranged first body (3, 4, 5), which is in a such proximity to the substrate (7) is arranged that it influences a heat flow to or from the substrate (7), and with a transport device (13) to at least the first body (3, 4, 5) at a predetermined point to be inserted into the process chamber (8) and to be removed from the process chamber (8), and with a storage device (10) for the intermediate storage of the first body (3, 4, 5), in which one against the first body (3, 4 , 5) exchangeable at the same predetermined point in the process chamber (8) insertable second body (3, 4, 5) is stored, characterized in that the two bodies differ by the heat flow to the substrate influencing properties. 10. The device according to claim 9, characterized in that the trans port device (13) has a gripper device with which the first body (3, 4, 5).
11. Vorrichtung nach Anspruch 9 oder 10, dadurch gekennzeichnet, dass der zweite Körper (3, 4, 5) zusammen mit dem Substrat (7) aus der Prozess- kammer (8) heraus und in die Bevorratungseinrichtung (10) gebracht werden kann. 11. The device according to claim 9 or 10, characterized in that the second body (3, 4, 5) together with the substrate (7) can be brought out of the process chamber (8) and into the storage device (10).
12 Verfahren oder Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der erste oder zweite Körper ein Substiat- halter (3) ist, der während des Prozessschrittes das Substrat (7) haltert. 13. Verfahren oder Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der erste oder zweite Körper ein Transport ring (4) ist, der den Rand des Substrates (7) während des Prozessschrittes oder während eines Transportes des Substrates (7) untergreift. 12. Method or device according to one of the preceding claims, characterized in that the first or second body is a substrate holder (3) which holds the substrate (7) during the process step. 13. The method or device according to any one of the preceding claims, characterized in that the first or second body is a transport ring (4) which engages under the edge of the substrate (7) during the process step or during transport of the substrate (7).
14. Verfahren oder Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der erste oder zweite Körper ein Abdeck ring (5) ist, der den Rand des Substrates um greift. 14. The method or device according to any one of the preceding claims, characterized in that the first or second body is a cover ring (5) which engages around the edge of the substrate.
15. Verfahren oder Vorrichtung, gekennzeichnet durch eines oder mehrere der kennzeichnenden Merkmale eines der vorhergehenden Ansprüche. 15. The method or device, characterized by one or more of the characterizing features of one of the preceding claims.
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