WO2020120578A1 - Porte-substrat destiné à être utilisé dans un réacteur cvd - Google Patents

Porte-substrat destiné à être utilisé dans un réacteur cvd Download PDF

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Publication number
WO2020120578A1
WO2020120578A1 PCT/EP2019/084649 EP2019084649W WO2020120578A1 WO 2020120578 A1 WO2020120578 A1 WO 2020120578A1 EP 2019084649 W EP2019084649 W EP 2019084649W WO 2020120578 A1 WO2020120578 A1 WO 2020120578A1
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WO
WIPO (PCT)
Prior art keywords
support
diameter
broad side
substrate holder
edge
Prior art date
Application number
PCT/EP2019/084649
Other languages
German (de)
English (en)
Inventor
Francisco Ruda Y Witt
Marcel Kollberg
Oliver SCHÖN
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of WO2020120578A1 publication Critical patent/WO2020120578A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to a device for use in a CVD reactor, comprising a substrate holder with at least three support projections originating from a broad side surface, the support surfaces lying in a common plane having a circular equivalent first diameter and which are arranged such that a central zone a substrate, which is surrounded by an edge zone supported on the wings, is at a distance from the broad side surface.
  • a substrate holder of the aforementioned type is used in a CVD reactor for holding a flat substrate, the substrate holder being heated from a lower broad side surface.
  • the upper broad side surface gives off heat to the substrate lying on the substrate holder. Since the sub strate due to thermal deformation or other bracing can not rest in a flat system on a broad side of the substrate holder, protrusions arise from the broad side surface of the substrate holder, on which an edge region of the substrate is supported. The edge area of the substrate is thus selectively supported by several support projections arranged on a circular arc line.
  • the heat transport from the broad side surface of the substrate holder to the substrate takes place via thermal radiation or heat conduction, the heat conduction depending on the heat conducting properties of the gas within the process chamber, which is located between the underside of the substrate and the broad side surface of the substrate holder. Since the area-specific heat transport via the support projections is greater than in the area between the support projections, it occurs in the area of the support projections. Jumps to higher temperatures on the substrate surface.
  • US 2003/0209326 A1 describes depressions arranged in an edge region of a bottom of a pocket of a susceptor and in which pins are inserted. The pins inserted into the recesses form support projections with a support surface with a diameter of approximately 600 mth. The distance between the underside of the substrate and the broad side surface of the susceptor is also about 600 mth here.
  • the US 6,840,767 B2 describes a susceptor with a support surface for receiving a substrate, which consists of a plurality of projections evenly distributed over the support surface, each of the plurality of jumps before forms an airfoil with a circular equivalent diameter of about 250mth.
  • US 2010/0227455 A1 describes a susceptor with pockets arranged therein, in which there are substrates that are supported at the edges.
  • Supporting projections should come into contact with the underside of the substrate, where the contact surfaces should have a circular equivalent diameter of at most 300gm.
  • the invention has for its object to provide measures with which the temperature inhomogeneities described above can be further reduced in the surface.
  • the support projection consists of at least two superimposed cylinder sections, the uppermost cylinder section forming a flat support surface.
  • the uppermost cylinder section can have the smallest circular equivalent diameter of the support projection.
  • the lowermost cylinder section can have the largest circular equivalent diameter of the supporting projection.
  • the support projection originates from a flat section of the broad side surface.
  • the lowermost cylinder section is surrounded by an annular depression, in particular with a rounded bottom. If the total height exceeds 300mth, it is provided that the support projection is designed in two stages.
  • the diameter of the second, lower stage can range between 1,200 gm and 1,500 mth.
  • the diameter of the upper step can be 300mth and in particular be smaller than the material thickness of the substrate.
  • the distance of the supporting projections from an edge of the broad side surface is a maximum of OO.OOOmhi, 3,000mth, I.OOOmhi, ⁇ qqmhi or 300mm.
  • the diameter of the broad side surface which is defined by the course of the edge edge, is preferably slightly smaller than the diameter of the substrate carried by the support projections, so that the substrates project with an edge region over the edge edge of the broad side surface.
  • a support ring which can be gripped by a finger of a gripper arm in order to be removed from the substrate holder.
  • the substrate can be handled with this support ring.
  • the supporting projections can be arranged in an edge strip of the broad side surface which has a maximum strip width of ⁇ .OOOmhi, 3,000mth, I .OOOmth, ⁇ qqmth or 300mth.
  • the support projections are preferably located directly on the edge, it being provided in particular that the edge adjoins a peripheral surface, which is a cylindrical surface. In order this peripheral surface can in turn adjoin a step, which is provided in particular for the support ring to be supported on it.
  • pect of the invention which has independent meaning, it is provided that the height of the support projections is greater than its maximum diameter.
  • the circular equivalent diameter of the supporting projections is a maximum of 300 gm and their height is at least 400 mth.
  • the support projections should spring directly from a flat section of the broad side surface.
  • the flat section of the broad side surface extends here at least in an area at a distance of 5000 mth from the support projection.
  • a device in particular according to a third aspect of the inven tion which is also a further development of a device according to DE
  • planar wings can have a circle-equivalent first diameter that can have a maximum of 600 gm, preferably a maximum times 300mhi.
  • the circular equivalent minimum diameter of the wing can be 150 gm or 300 gm.
  • the height of the support projection can be in a range between 150 and 400 gm. It can be provided that the walls of the truncated cone-like projection protrude from a ring-shaped depression without kinks.
  • the aforementioned aspects may have the following optional properties.
  • the height which can correspond to a distance of the wing from a reference plane defined by the broad side surface, is greater than the circular equivalent diameter of the flat wing.
  • the equivalent diameter corresponds to the diameter of a circle that has the same area as the wing.
  • the maximum diameter of the support projection is less than 600gm.
  • diameter is understood to mean the circle-equivalent diameter, which corresponds to the diameter of a circle which has the same cross-sectional area as the supporting projection.
  • the circle-equivalent diameter of the wing and / or the circle-equivalent diameter of the maximum cross-sectional area of the support projection are smaller than the thickness of the substrate, the substrate being a flat body.
  • the height of the supporting projection can be at least 100 gm, at least 200 or at least 400 gm.
  • the cross section of the support projection is out of round.
  • the support projection can have a polygo nal floor plan.
  • the floor plan can be hexagonal or rectangular.
  • the support projection is formed by a cylindrical body, the outline of which can be round or out of round.
  • the cross-sectional area of the support projection decreases in the direction away from the broad side surface.
  • the maximum cross-sectional area of the support projection is the foot surface of the support projection with which it is rooted in the broad side surface.
  • the minimum cross-sectional area of the support projection is then the wing.
  • the cross-sectional area of the support projection can continuously decrease from the broad side surface to the support surface.
  • the cross-sectional area will gradually decrease.
  • the support projection has two step sections, each of which has a cylindrical shape with a different cross-sectional area.
  • the flat wings are in a common plane, which corresponds to the underside of the substrate.
  • the support projections originate directly from the broad side surface.
  • the reference plane then runs through the root of the supporting projection.
  • the support projection can also be surrounded by a ring-shaped recess, as is basically known from DE
  • the reference surface runs through the radially outer edge of the depression, which can be a groove. But it can also run through the lowest point of the recess.
  • the support projection is assigned to the substrate holder using the same material.
  • the sub strathalter can consist of silicon carbide or coated graphite.
  • a blank made of graphite or particularly preferably made of silicon carbide is used, which is machined abrasively, in particular by means of a milling cutter. With the milling cutter, for example, the broad side surface is gradually deepened, with the support projections being left standing.
  • a step can also be generated on which a support ring can be placed, with which a substrate carried by the support projections can be lifted off.
  • the device can also have a susceptor, which has a pocket in which the substrate holder lies.
  • the substrate holder itself performs the function of a susceptor and has a plurality of substrate storage spaces, each of which has protruding projections have, which are arranged on a circular arc line around the center. Be preferably six support projections are provided.
  • FIG. 4 shows a second embodiment of the invention in a representation according to FIG. 3,
  • FIG. 7 shows a plan view of a substrate holder 10 to illustrate the position of the support projections 13.
  • Figure 1 shows schematically in section a CVD reactor with a reactor housing 1, in which a process chamber 4 is located.
  • a gas inlet element 2 protrudes into the process chamber 4, through which process gases, For example, organometallic compounds of elements of the III main group and hydrides of elements of the V main group can be fed into the process chamber 4 together with a carrier gas.
  • the process chamber 4 is delimited at the top by an optionally cooled process chamber ceiling 5.
  • the process chamber 4 is limited by a susceptor 3, made of graphite or a similar suitable material.
  • a heating device 9 with which heat is supplied to the susceptor 3.
  • a substrate holder 10 On the process chamber 4 facing the upper side of the susceptor 3, several pockets 6 are provided in a circular arrangement around the center of the susceptor 3, in each of which a substrate holder 10 is arranged.
  • a carrier gas on which the substrate holder 10 rests, can be fed into the pocket 6 through a gas feed line 7.
  • the gas cushion carrying the substrate holder 10 is produced in such a way that the substrate holder 10 inserts into the pocket 6 and rotates about its axis.
  • the underside 11 of the substrate holder 10 can be flat. But it can also have spatial structures.
  • the drawings are not to scale in this regard.
  • the substrate holder 10 has a radially outer step 21 on which a support ring 19 rests, which has a radially inward-pointing support step 22 and which projects with a projecting region 23 beyond the radially outer region of the substrate holder 10.
  • the top of the support ring 19 lies approximately flush with the top of the susceptor 3.
  • the substrate holder 10 has an upper broad side surface 12 opposite the lower broad side surface 11, which extends essentially in one plane. From the Randab cut the upper broad side surface 12 spring support projections 13. Die Figure 7 shows that a total of six grant in a uniform angle V vorgese around the center of the substrate holder 10 disposed support projections 13 are hen.
  • the support projections 13 each have a support surface 14, the support surfaces 14 of all support projections 13 running in a common plane. This plane is formed by the underside 17 ′ of a substrate 17, which is carried by the substrate holder 10.
  • the circular disk-shaped sub strate 17 has a central region Z, which is hollow at a distance a above the broad side surface 12.
  • the substrate 17 is carried exclusively in a Randbe area R by the support projections 13, the outermost edge of the substrate 17 being above the support shoulder 22, so that the substrate 17 can be removed from the substrate holder 10 by lifting the support ring 19.
  • the exemplary embodiments of a support projection 13 shown in FIGS. 3 and 4 are a substrate holder 10 made of silicon carbide.
  • the substrate holder 10 has been worked from a solid material by an abrasive method, for example by means of a milling cutter. Accordingly, the support projections 13 are connected to the bulk material of the substrate holder 10 in the same material.
  • the support projections 13 have a hexagonal plan.
  • the maximum cross-sectional area of the support projection 13 is located in the root region of the support projection 13, in which the support projection 13 arises from the broad side surface 12 which extends in one plane to the edge of the support projection 13.
  • the support surface 14 has essentially the same cross-sectional area as the cross-sectional surface of the root region of the support projection 13.
  • D1 denotes the circle-equivalent diameter of the support surface 14, which extends in one plane.
  • D2 denotes the circle-equivalent diameter of the root surface of the support projection 13, which extends in the broad side surface 12.
  • the equivalent circular diameters Dl and D2 are the same size in this embodiment and are about 300gm. The diameters can also be up to 600 gm.
  • the height h of the support projection 13 here is approximately 400 gm. However, the height h can also be less, but in particular greater than 100 gm.
  • the total of six support projections 13 originate from a flat section of the broad side surface 12.
  • the broad side surface plane runs at least in a region with a radius of 5 mm around the support projection. Before the entire broad side surface 12 has no steps or other ridges or depressions.
  • the broad side surface 12 extends at least approximately flat in such a way that it is only a maximum of 10 .mu.m at individual points from a reference plane extending in a mathematically exact plane.
  • Figure 3 shows an embodiment of a support projection 13, which consists of two superimposed cylinder sections 15, 16.
  • a lower section 16 has a maximum cross-sectional area with a circular equivalent diameter D2, which is approximately 600 ⁇ m.
  • the upper section 15 be sits a circular equivalent diameter Dl of about 300gm.
  • the height h is also about 400gm.
  • the two cylindrical sections 15, 16 arranged one above the other can have a non-circular, in particular polygonal, hexagonal or rectangular cross section.
  • a step surface between the upper section 15 and the lower section 16 preferably runs parallel to the broad side surface 12 or to the wing 14. Also in this embodiment, the design of the broad side surface 12 corresponds to that as has been explained for FIG. 3.
  • Figure 6 shows a third embodiment of a support projection
  • the substrate holder 10 can be made of graphite here and is coated with silicon carbide after its shaping.
  • the support projection 13 has here a lateral surface that extends along an envelope surface that is frustoconical.
  • the envelope surface can be a surface of revolution.
  • the envelope surface is in particular an inverted cone surface.
  • the supporting projection 13 originates from a recess 20 which extends along the edge of the supporting projection 13 .
  • the support projections 13 lie directly on an edge 24 of the broad side surface 12, on which the broad side surface 12 adjoins a peripheral surface 24, which is formed by a cylinder jacket wall.
  • the peripheral surface 24 merges into step 21 on which the support projection 13 lies.
  • the radially remote from the center of the substrate holder 2 side of the support projections 13 is formed from a section from a cylindrical surface. This radially outward-facing wall of the support projection 13 is spaced apart by a section A1 from the edge of the substrate 17 carried by the support projections 13, this distance being 3 to 3.5 mm.
  • the recess 20 shown in Figure 6 can extend on an arc line, the center of which is the support projection 13.
  • the outside diameter D3 of the circular contour line of the depression 20 can be in the range between 1,500 gm and 2,000 gm.
  • the depth of the channel 20 can be 50 gm.
  • the apex line 20 ′ of the channel 20 can define a reference plane 18, from which the height h is measured, which here is approximately 150 ⁇ m.
  • the circular diameter D1 of the wing 14 can also be less than 300gm here. In the exemplary embodiment, it is approximately 150 gm.
  • the distance a of the substrate underside 17 from the broad side surface 12 can be in the range of 100 mhi here.
  • the broad side surface 12 can run flat except for the annular depressions 20, a plane also being understood to mean those surfaces which are slightly concave and deviate from a thematically exact reference plane at a maximum lOgm, a maximum of 20 mhi or a maximum of 50 mhi.
  • the two steps can have the same step heights.
  • the equivalent diameter D1 of the wing 14 can be less than 400 gm, preferably less than 300 gm. However, it can also be larger than 300 gm and have a maximum value of, for example, 600 gm.
  • the diameter D2 of the lowest stage of the two-stage support projection 13 can be 1,000 gm, 1,200 gm or even 1,500 gm. In particular, it is provided that the circular equivalent diameter D2 of the lowest stage is less than 1,500 gm, less than 1,200 gm or less than 1,000 gm.
  • the Tragvor projections 13 form spacers with a height and a diameter, the diameter is less than 750gm and preferably about 300gm be.
  • the support projections 13 are, in particular, part of the substrate holder 10 that is made of the same material. In particular, they are not inserts, but are rather manufactured by an abrasive process.
  • the number of support elements is preferably less than 10. In particular, it is provided that the number of support elements is greater than or equal to 3, 4, 5 or 6, the support elements being distributed radially uniformly around a center. It can further be provided that the circular equivalent diameter of a support projection 13 is smaller than its height h.
  • the substrate holders 10 are parts of a susceptor arrangement, the susceptor 3 having a multiplicity of pockets has, which are arranged evenly distributed around a center of the susceptor 3 and a substrate holder is in each pocket.
  • the substrate holder is preferably made of graphite silicon. But it can also be made of graphite and then coated with silicon carbide.
  • the support element has a two-stage shape, a truncated cone shape or a cylindrical shape.
  • a device which is characterized in that the Tragvor jump 13 consists of at least two superimposed cylinder sections 15, 16, the uppermost cylinder section 15 is a flat support surface 14 forming the contact surface with the first circle-equivalent diameter
  • a device which is characterized in that the circular equivalent second diameter D2 of the maximum cross-sectional area of the support projection 13 is less than 600mth.
  • a device which is characterized in that the distance of the support projections 13 from an edge 25 of the broad side surface 12 is maximum 6,000gm, 3,000gm, lOOOOgm, 600gm or 300gm.
  • a device which is characterized in that the Tragvor jumps 13 are arranged directly on the edge 25 or within an edge strip with a radial extent of a maximum of 6,000gm, 3,000gm, lOOOOm, 600gm or 300mhi.
  • a device which is characterized in that the marginal edge
  • a device which is characterized in that a jacket surface 13 'of the supporting projection 13 extends at least in regions along a conical stump-like envelope surface.
  • a device which is characterized in that the height h, which corresponds to a distance of the support surface 14 from a reference plane 18 defined by the broad side surface 12, is at least 400 gm and / or that the support surface 14 has a circle-equivalent first diameter Dl of a maximum of 600 gm, in particular a maximum of 300 gm, and / or that the supporting projection 13 arises directly from a flat region of the broad side surface 12 or a depression.
  • a device which is characterized in that the cross section of the support projections 13 is non-round and in particular has a polygonal, hexagonal or rectangular plan.
  • a device which is characterized in that the support projections 13 are assigned to the substrate holder 10 in the same material, the substrate holder 10 being made of graphite or silicon carbide.
  • a method which is characterized in that the support projections 13 are machined out of the solid material of a blank made of graphite or silicon carbide by an abrasive method.
  • a device which is characterized in that the maximum circular equivalent diameter of the support projections 13 is greater than their height h.

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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif destiné à être utilisé dans un réacteur CVD (1), présentant un porte-substrat (10) comportant au moins trois saillies porteuses (13) dépassant d'une surface à côté large (12), lesquelles saillies porteuses présentent des surfaces porteuses (14) se trouvant dans un plan commun et comportant un premier diamètre (D1) équivalent à un cercle, et sont agencées de façon à ce qu'une zone centrale (Z) d'un substrat (17), qui est entourée par une zone de bord (R) reposant contre les surfaces porteuses (14), présente une distance (a) par rapport à la surface à côté large (12). Les saillies porteuses (13) peuvent être directement agencées sur le bord de la surface à côté large (12) ou dans une bande de bord comportant une extension radiale de 600 μm. En outre, les saillies porteuses (13) peuvent être formées de manière étagée.
PCT/EP2019/084649 2018-12-12 2019-12-11 Porte-substrat destiné à être utilisé dans un réacteur cvd WO2020120578A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018131987.8A DE102018131987A1 (de) 2018-12-12 2018-12-12 Substrathalter zur Verwendung in einem CVD-Reaktor
DE102018131987.8 2018-12-12

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WO2020120578A1 true WO2020120578A1 (fr) 2020-06-18

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DE (1) DE102018131987A1 (fr)
TW (1) TW202037753A (fr)
WO (1) WO2020120578A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7416864B2 (ja) 2021-06-25 2024-01-17 セメス カンパニー，リミテッド 支持ユニット、これを含むベーク装置及び基板処理装置

Citations (10)

* Cited by examiner, † Cited by third party
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