EP3810827A1 - Ensemble pour la mesure de la température de surface d'un suscepteur dans un réacteur de dépôt physique en phase vapeur - Google Patents

Ensemble pour la mesure de la température de surface d'un suscepteur dans un réacteur de dépôt physique en phase vapeur

Info

Publication number
EP3810827A1
EP3810827A1 EP19731699.5A EP19731699A EP3810827A1 EP 3810827 A1 EP3810827 A1 EP 3810827A1 EP 19731699 A EP19731699 A EP 19731699A EP 3810827 A1 EP3810827 A1 EP 3810827A1
Authority
EP
European Patent Office
Prior art keywords
susceptor
opening
cover plate
edge
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19731699.5A
Other languages
German (de)
English (en)
Inventor
Peter Sebald Lauffer
Francisco Ruda Y Witt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP3810827A1 publication Critical patent/EP3810827A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the invention relates to a device for separating in particular elements of III. and V. main group contain layers on substrates carried by a side of a susceptor facing a process chamber and arranged in free spaces between cover plates, means being provided for optically measuring the temperature of the susceptor.
  • the invention further relates to a susceptor arrangement consisting of a susceptor and a plurality of cover plates, and a cover plate for use in a device or susceptor arrangement.
  • Devices of the type described above are known in the prior art as CVD reactors and in particular MOCVD reactors for chemical vapor deposition, in particular using metal-organic gaseous starting materials, in order to coat III-V semiconductors on substrates in a process chamber of an MOCVD Separating the reactor.
  • the composition of the layer or layer sequence deposited on the substrate and the crystalline or electrical quality of the deposited layers depend to a large extent on the temperature inside the process chamber or on the surface of the substrate.
  • the substrates lie on substrate holders, which in turn by one
  • the substrate holder can be rotated around its own axis.
  • the circular susceptor can also can be driven in rotation.
  • the heating of the susceptor or the process chamber to the process temperature takes place by means of a heating device, which is usually arranged below the susceptor, while the substrates are arranged above the susceptor.
  • a temperature control device is used to control the heating power, which measures the temperature of the susceptor on the underside of the susceptor. The measurement is carried out optically, for example via an optical fiber and a pyrometer.
  • the pyrometer for measuring the surface temperature of the substrate With the pyrometer for measuring the surface temperature of the substrate, regulation of the substrate temperature is only possible if a sufficient signal is present, which is not the case in particular if the substrate or the layer deposited on the substrate for the wavelength used by the pyrometer is transparent. Because of the heat flow through the susceptor from the back facing the heating device to the top carrying the substrates, there is a temperature difference between the susceptor top and the susceptor bottom. This temperature difference depends on the thermal radiation properties of the susceptor top or the cover plate arranged on the susceptor.
  • the invention has for its object to provide measures with which the temperature of the susceptor can be regulated more precisely, especially in the vicinity of a substrate.
  • At least one of the cover plates arranged on the susceptor upper side has an opening through which the upper side of the Susceptor is visible.
  • the beam path of a means for measuring the temperature can pass through this particularly small opening.
  • the means for temperature measurement can be a pyrometer, which is arranged outside the process chamber and in particular above the process chamber ceiling.
  • the beam path of the pyrometer can pass through an opening in the process chamber ceiling and the opening in the cover plate.
  • Embodiments of the inventions can have a plurality of substrates which lie spaced apart from one another on the side of the susceptor facing the process chamber.
  • the substrates can be spatially separated from one another.
  • cover plates can be provided for substrates. However, it can also be provided that only one cover plate is provided. This can have a circular opening in which a substrate lies. However, a single cover plate can also have a plurality of circular openings, in each of which there is a substrate.
  • the opening in the process chamber ceiling and the opening of the cover plate are arranged or aligned with one another in such a way that the beam path of the optical means, for example a pyrometer, passes through both openings and hits the surface of the susceptor.
  • the one-part or multi-part cover plate has an edge on a circular arc line
  • the single-part or multi-part cover plate has an edge running on a circular arc line.
  • the edges of several cover plates can add up to a full circle. This forms an outer edge which limits the outside of a bearing surface on which a multiplicity of substrates are stored, the substrates extend in a circular area around a center of the susceptor.
  • the circular area is delimited by an outer circular arc line and an inner circular arc line.
  • the area on which the substrates are located is therefore in particular an annular surface.
  • This circular surface can have a center line running on a circular arc, on which lie the centers of the substrates or the centers of substrate holders, which each carry one or more substrates.
  • the openings of the cover plate preferably lie in the circular region.
  • the cover plates can be segments of a circular cover body.
  • the opening can be arranged between two inner edges of the cover plate each extending on circular arc lines.
  • the opening can lie on an axis of symmetry extending in the radial direction with respect to the circular body.
  • the opening can also lie on an arcuate strip which extends over the center points of the substrates arranged on an arcuate line.
  • Each segment or cover plate can be in one piece. However, it is also possible to construct a cover plate or a segment of the cover plate in a sandwich-like manner, for example from a plurality of flat bodies lying one above the other.
  • the opening of the cover plate is open towards an edge of the cover plate. It can also be provided that the opening is arranged on an edge adjacent to the substrate. The opening can be directly adjacent to the edge of the substrate. It can be provided that the cover plate adjoins an outer edge of the susceptor. Radially outer cover plates and radially inner cover plates can be provided. The opening can be assigned to the radially inner cover plate or the radially outer cover plate. In a preferred variant, the opening is assigned to the radially outer cover plate. A plurality of radially outer cover plates can be provided, which are arranged in the circumferential direction along the edge of the susceptor running on a circular arc line.
  • cover plates has an opening, preferably all cover plates lying next to one another in the circumferential direction and in particular radially outer cover plates have at least one, preferably two openings, it being provided in particular that all openings are arranged on a circular arc line, which extends around a figure axis of the susceptor, about which figure axis the susceptor can be rotated.
  • the susceptor can also consist of graphite, in particular coated graphite.
  • the cover plates can also consist of graphite, in particular coated graphite.
  • the cover plates can also be made of a different material, for example quartz or another temperature-resistant material. In particular, it is provided that several, in particular inner and outer cover plates surround a circular free space.
  • the cover plates have inner edges running on a circular arc line, within which at least one substrate is arranged.
  • Circular substrate holders can be arranged within the free spaces between the cover plates.
  • These substrate holders which can consist of graphite or a similar suitable material, can be driven in rotation about their figure axis. This can be done using a gas rotary bearing.
  • gas flows can emerge from the top of the susceptor, which form a gas cushion on which the substrate holder rests.
  • the substrate holder can be rotated by a suitable direction of the gas flows emerging from the openings.
  • Each substrate holder can carry a support ring which rests on the edge of the substrate holder.
  • the support ring can have a radially inner support shoulder on which the edge of the substrate rests.
  • a radially outwardly protruding projection of the support ring can be gripped by a fork prong of a fork-shaped gripper in order to load or unload the CVD reactor or the susceptor arrangement with substrates.
  • the cover plates To engage the prongs of the gripper, the cover plates form channels which are open to the radially outer edge of the susceptor arrangement.
  • the two channels run parallel to one another and in the tangential direction to the substrates.
  • the channels have a floor. In the area of the edge of the substrate or the inner edge of the cover plate, the channels are open to the free space.
  • the bottom of the channel has the opening through which the beam path of the optical means for temperature measurement passes.
  • the opening can be assigned to the area of the base which is directly adjacent to the inner edge of the cover plate.
  • each of the plurality of cover plates forms pairs of parallel channels which are open to the radially outer edge of the cover plate.
  • the means for temperature measurement can be a pyrometer, with which the surface temperature of the substrate can also be measured. The temperature measurement takes place while the susceptor is rotating about its axis of rotation, the beam path of the optical measuring device remaining stationary and as Following the rotation of the susceptor, it moves over the substrates in order to determine their surface temperature.
  • the beam path has a radial distance from the axis of rotation of the susceptor that corresponds to the radial distance of the center of each substrate from the center of the susceptor.
  • the substrates are preferably equally spaced from the center of the susceptor.
  • the openings for the passage of the beam path can lie on the same or a similar circular arc line around the center of rotation of the susceptor on which the centers of the substrates also lie. As a result, the beam path, after it has traveled over a respective substrate, passes through the opening provided in the cover plate for measuring the susceptor surface.
  • the pyrometer is controlled by an electronic measuring device and is able to deliver measured values at a sufficiently high frequency so that a small opening area is sufficient to obtain temperature measured values of the susceptor surface.
  • the radius of the susceptor is approximately 300 mm.
  • the radius of a substrate holder is approximately 100 mm.
  • the width of a channel is approximately between 10 mm and 15 mm.
  • the area of the opening in the cover plate can be between 10 mm 2 and 100 mm 2. It is preferably a maximum of 80 mm 2 .
  • the opening can have a rounding with a rounding radius of 4 mm.
  • the apex of the curve can be located approximately 7 mm - 8 mm from the open edge of the channel.
  • a further development of the invention provides that the surface of the susceptor is provided with a suitable coating in order to protect the surface of the susceptor.
  • the coating consists of a resistant material, for example silicon carbide (SiC).
  • SiC silicon carbide
  • the unprotected places below the opening are etched measures specified below are taken. These measures also prevent residues, for example, from forming inside the opening metallic gallium accumulates. These, in particular drop-shaped, gallium accumulations could attack the SiC coating.
  • the susceptor surface has an opening into which an insert is inserted, the upper side of the insert then forming the surface visible from the pyrometer.
  • the inserts can be made of SiC.
  • the inserts can rest loosely on the susceptor, lie loosely in openings, but can also be positively connected to the susceptor.
  • the inserts can be spaced apart from cover plates.
  • the inserts can also carry the cover plates. In this case, it is advantageous if the cover plates lie gas-tight on the inserts. As a result, the areas outside the inserts are protected by an etching gas used to clean the CVD reactor.
  • FIG. 1 is a plan view of a susceptor arrangement
  • FIG. 2 shows a section through the susceptor arrangement shown in FIG. 1 along the line II-II, additional parts of a CVD reactor housing 1 being additionally shown schematically,
  • FIG. 4 is a perspective view of a radially outer cover plate 4,
  • FIG. 7 shows a representation according to FIG. 3 of a third exemplary embodiment
  • FIG. 8 shows a representation according to FIG. 3 of a fourth exemplary embodiment
  • FIG. 9 shows a representation according to FIG. 3 of a fifth exemplary embodiment
  • FIG. 10 shows a representation similar to FIG. 1 of a sixth exemplary embodiment
  • FIG. 11 shows the section along the line XI-XI in FIG. 10,
  • FIG. 12 shows a representation according to FIG. 11 of a seventh exemplary embodiment
  • FIG. 13 shows a representation according to FIG. 10 of an eighth exemplary embodiment
  • FIG. 14 shows a further exemplary embodiment in a representation according to FIG.
  • FIG. 4 the opening extending centrally between two circular boundary lines 25,
  • 15 shows a further exemplary embodiment
  • 16 shows a plan view of the further exemplary embodiment, in which the opening 15 runs in an axis of symmetry 5
  • FIG. 17 shows a section along the line XVI - XVI in FIG. 16.
  • the CVD reactor 1 shown only schematically in the drawings has a gas-tight housing made of stainless steel, which can be evacuated. Inside the CVD reactor housing 1 there is a circular disk-shaped susceptor 2 made of graphite or a similar suitable material, the edge 2 'of which runs on a circular arc line. The top 3 of the susceptor 2 faces a process chamber 7, which is delimited at the top by a process chamber ceiling 6. A gas inlet 8 is located approximately in the area of the center point of the susceptor 2, which corresponds to an axis of rotation 22 about which the susceptor 2 can be driven in rotation. The gas feed through the gas inlet member 8 can be seen from above, through an opening in the process chamber. ceiling 6. But it is also provided that the gas feed from th through a central opening of the susceptor 2 takes place.
  • a heating device 9 in order to heat the susceptor 2 to a susceptor temperature which is sufficiently high that a process temperature is set in the process chamber 7 at which gaseous starting materials fed into the process chamber 7 through the gas inlet 8 disassemble.
  • the gaseous starting materials can be metal-organic compounds of III.
  • Main group and hydrides of the fifth main group act.
  • a gallium-containing metal organic compound and ammonia can be fed in together with a carrier gas through the gas inlet in order to deposit GaN on a substrate.
  • substrate holders 12 On the upper side 3 of the susceptor 2 facing the process chamber 7 there are substrate holders 12 which have a circular disk shape and which are arranged on a circular arc line around the axis of rotation 22.
  • Each circular disk-shaped substrate holder 12 carries a support ring 11 which has a radially outer projection 19 and a radially inner support shoulder 23.
  • the edge of the substrate 10 lies on the carrying shoulder 23 at least or only during transport.
  • Channels and gas nozzles are provided, which are located below the substrate holder 12 in the upper side 3 of the susceptor 2 in order to produce a gas cushion below the substrate holder 12, which is able to surround the substrate holder 12 to drive his figure axis.
  • the arrangement consisting of substrate holder 12 and support ring 11 is in each case in a window which is framed by cover plates 4, 5.
  • At least one inner cover plate 5 is provided which has radially outer edges which extend along an arcuate line. The edges of the substrate 10, the support ring 11 or the substrate holder 12 adjoin these edges.
  • a plurality of inner cover flaps 5 are arranged around an inner opening.
  • the number of radially outer cover plates 4 and radially inner cover plates 5 can correspond to the number of substrates 10. In the exemplary embodiment, the number is 5.
  • a plurality of radially outer cover plates 4 are provided, the radially outer edge 24 of which extends along the radially outer edge 2 'of the susceptor 2.
  • the outer cover plates 4 have radially inner edges 25 which run on a circular arc line and which, together with the radially outer edges of the inner cover plate 5, form an arc.
  • the radially inner edge 25 of the outer cover plate 4 can extend over a larger radius than the radially outer edge of the inner cover plate 5.
  • the radially inner edges 25 of the outer cover plates 4 can form a step 26.
  • An outer cover plate 4 forms at least one channel 17 which is open to the radially outer edge 24 of the cover plate 4 and which forms a bottom 18 which is spaced from an upper side of the outer cover plate 4 which faces the process chamber 7.
  • the width a of the channel 17 is approximately 10 mm - 15 mm.
  • the radius RI of the susceptor 2 is approximately 300 mm - 350 mm in the exemplary embodiment.
  • the radius R2 of the substrate holder 12 is approximately 100 mm-120 mm in the exemplary embodiment.
  • each substrate 10 there can be two channels 17 running parallel to one another, which run tangentially to the substrate 10.
  • Forks of a fork-shaped gripper can engage in the channels 17 in order to engage under the overhang 19 of the support ring 11 in order to raise the support ring 11 together with the substrate 10.
  • the outer cover plate has no channels 17.
  • At least one of the cover plates 4, 5 forms an opening 15 through which a section of the top 3 of the susceptor 2 is visible.
  • the opening 15 thus forms a region of the cover plate arrangement which does not cover the top of the substrate.
  • the opening 15 is provided in an outer cover plate 4.
  • the openings 15 are arranged directly adjacent to the edge 25, so that the openings 15 form cuts in the edge 25 of the outer cover plate.
  • the openings 15 are each in the Area of a bottom 18 of a channel 17 are arranged.
  • the openings 15 are arranged in the radially inner end region of a channel 17, that is to say where the substrates 10 have their greatest circumferential extent around the axis of rotation 22.
  • the openings 15 can be arranged on an arc line about the axis of rotation 22, on which the centers of the substrates 10 or the support rings 11 and the substrate carrier 12 are also arranged.
  • Each of the channels 17 assigned in pairs to a substrate carrier 12 or support ring 11 preferably has an opening 15.
  • FIG. 1 shows a circular arc line denoted by a around the center of the susceptor arrangement shown there.
  • Line a forms an outer boundary line of an annular surface on which the substrates 10 lie.
  • the line a touches the radially outward-pointing sections of the edges of the substrate 10.
  • a line b that touches the radially inner regions of the edges of the substrate 10 and is also a circular arc line around the center of the susceptor arrangement, limits the circular area in the radial inward direction.
  • the openings 15 preferably lie in the circular surface, the openings 15 being closer to an arc line c than the circular lines a, b delimiting the circular surface.
  • the circular arc line c forms a center line of the circular surface. It can run through the centers of the substrates 10.
  • the opening 15 can thus lie on a central circular strip of the circular ring surface which has a width which is approximately half the radial distance between the two edge lines a and b.
  • the opening 15 is open towards the edge 25 of the cover plate 4.
  • the opening width b is approximately 7 mm - 10 mm, preferably 8 mm.
  • the U-shaped edge of the opening 15 has a rounded section which runs on a semicircular line and has a radius of curvature of 4 mm. Overall, the opening 15 extends about 5 mm - 10 mm away from Edge 25.
  • the apex of the rounded line has a distance c of approximately 7 mm - 8 mm from edge 25.
  • the area of the opening 15 is a maximum of 80 mm 2 .
  • the upper side of the susceptor 2 is coated with a coating made of silicon carbide.
  • the coating 27 is formed thickened in the region of the opening.
  • a thickened section 27 ′′ of the coating 27 forms, as it were, an elevation that extends into the opening 15.
  • the edge of the opening 15 can also rest on the thickened area 27 ′′ of the coating 27.
  • the surface of the susceptor 2 visible through the opening 15 is formed from the top 28 "of an elevation 29.
  • an insert 28 is inserted in a recess in the top of the susceptor 3 A section of the insert 28 forms the elevation 29.
  • the insert 29 consists of a resistant material, for example silicon carbide, and is inserted into the recess of the susceptor 2, which consists, for example, of graphite and has a silicon carbide coating 27 is provided.
  • the insert piece 28 which also here in a recess of the susceptor 2 a surface 28 ′ is used, which runs flush in the surface of the coating 27.
  • the coating 27 and the insert 28 are made of SiC.
  • the opening 15 can not only be provided at the edge of an outer cover plate 4 or an inner cover plate 5. It is also provided that the opening 15 is arranged in an outer or inner cover plate 4, 5, so that the opening 15 is enclosed all around
  • the sixth embodiment shown in Figure 10 shows an inner cover plate 5 which is provided with the opening 15.
  • Figure 11 shows that the cover plate 5 through a gap from the
  • top of the susceptor 2 is spaced. It rests on an elevation 29, which here is formed from an insert piece 28 similarly to the embodiment shown in FIG. 8.
  • the upper side T of the elevation 29 or the insert 28, which points away from the susceptor 2 closes the opening 15 towards the bottom, so that when the CVD reactor is cleaned by introducing an etching gas, it can only pass through the opening 15 to a reduced extent through the opening 15.
  • the sixth exemplary embodiment shown in FIG. 12 shows an elevation 29 which is also formed here by an insert 28 which extends into the opening 15.
  • the top of the elevation 29 or the insert 28 can be flush here in the broadside plane of the cover plate 4 or 5.
  • the eighth embodiment shown in Figure 13 shows an opening 15 in the outer cover plate 4, which is also encircled here. Below the opening 15 there can be a coating according to FIG. 6, a thickened coating according to FIG. 7 or an insert according to FIGS. 8, 9, 11 and 12.
  • the surface of the susceptor 2 is protected during an etching of the CVD reactor.
  • a defined heat transport path is formed between the underside of the susceptor 2 and the surface 28 ′′ visible from the beam path 14, which is formed by the top 28 ′′ of the elevation 29 or by the coating 27, 27 ′′.
  • the insert pieces 28 can be positively connected to the susceptor 2. However, they can also be detachably placed in a recess in the top of the susceptor 2. To a certain extent, they can then rest loosely on the susceptor.
  • the openings 15 can have an opening depth in the range between 6 and 8 mm.
  • the opening width can also be between 6 and 8 mm.
  • the openings have an oval outline.
  • Two opposite narrow sides of the opening 15 can run on a semicircle.
  • the diameter of the semicircle can be between 4 and 7 mm. It is preferably 5 mm.
  • the vertices of the two semicircles can be spaced 6-10 mm apart, a value between 8 and 9 mm being preferred.
  • Figures 14 to 16 show such an embodiment. These are segment-shaped cover plates 4 which are designed such that a plurality of such cover plates 4 can be joined together to form a circle. Then circular free spaces that serve to store a substrate.
  • the cover plates 4 shown in FIGS. 14 to 16 have an axis of symmetry S.
  • the axis of symmetry S runs centrally between two circular-shaped edges 25.
  • the opening 15 is located on an imaginary circular surface which extends over the centers of the bearing surfaces.
  • the openings 15 lie within this narrow circular-arc-shaped strip. This area is delimited in FIG. 1 by the lines a and b.
  • the cover plates 4 can be designed in one piece. However, as FIG. 15 shows in particular, it is also provided that a plurality of cover plates 4, 4 ′ are arranged one above the other in a sandwich-like manner.
  • the susceptor 2 is heated to a susceptor temperature by means of the heating device 9. This is chosen such that the surface of the substrate 10 assumes a process-specific substrate temperature.
  • the susceptor 2 and the substrate holder 12 are driven in rotation about their respective figure axes.
  • the process gases described above are fed into the process chamber 7 through the gas inlet element 8, so that they decompose pyrolytically there and in particular on the surface of the substrate 10.
  • the decomposition products are, for example, gallium and nitrogen. These decomposition products form a layer on the surface of the substrate 10.
  • the substrate temperature is optically measured using an optical measuring device, for example a pyrometer 13.
  • the relevant optical beam path 14 runs from the pyrometer 13 parallel to the axis of rotation 22 through an opening 21 in the process chamber ceiling 6.
  • the beam path 14 also passes through the opening 15 in the outer cover plate 4, so that the surface temperature of the susceptor 2 can be optically measured at a measuring point 16 on the upper side 3 of the susceptor 2.
  • the temperature value measured at the measuring point 16 can be used in order to supply the heating device 9 with heating power in order to control the susceptor temperature to a desired value.
  • the surface temperature of the substrate 10 can also be measured with the optical measuring device 13. If this is measurable, the substrate temperature can also be used for control.
  • a device which is characterized in that the at least one cover plate 4, 5 has an opening 15 through which a section of the upper side 3 of the susceptor 2 is visible and through which the temperature measurement is carried out.
  • a susceptor arrangement for a device comprising a susceptor and cover plates 4, 5, characterized in that the opening 15 lies in the circular surface.
  • a cover plate which is characterized in that the opening 15 is arranged in the region of the annular surface.
  • a device which is characterized in that the opening 15 is open to an edge 25 of the cover plate 4 and / or that the opening 15 is closer to an arcuate line 10 which runs through the centers of circular surfaces which are at least partially encompassed by an edge 25 of the cover plate 4, as on a circular arc line a which tangentially touches the circular surfaces outside or on a circular arc line b which tangentially touches the circular surfaces radially on the inside.
  • a device which is characterized in that the cover plate 4 has a circular peripheral edge or is a segment of a body having a circular peripheral edge, the cover plate having an inner edge 25 which extends along a circular arc line, and the opening 15 is arranged between two inner edges 25 or adjacent to an inner edge 25.
  • a device which is characterized in that the area of the opening (5) is at most 100 mm 2 , preferably at most 80 mm 2 or at most 60 mm 2 .
  • a device which is characterized in that the cover plate 4 has a channel 17 open to the process chamber 7, the bottom 18 of which Forms opening 15 and / or that the cover plate 4 adjoins an outer edge 2 'of the susceptor 2.
  • a device which is characterized in that the means for measuring the temperature of the susceptor 2 comprise a pyrometer 13 arranged above a process chamber ceiling 6, a beam path 14 through the opening 15 and an opening arranged above it in the process chamber ceiling 6 21 runs.
  • a device which is characterized in that a plurality of cover plates 4 are arranged along an edge 2 'of the circular disc-shaped susceptor 2, each of which has an inner edge 25 to which an edge of a substrate 10, a support ring 11 or a substrate holder 12, it being provided in particular that the plurality of cover plates 4 each form pairs of parallel channels 17 which are open to the radially outer edge 24 of cover plate 4 and which extend in a tangential direction to substrates 10.
  • a device which is characterized in that the portion of the upper side which is visible through the opening 15 has a coating 27, is formed by an elevation 29 or is formed by an insert 28 which is inserted in a recess of the susceptor 2, an end face che 28 "of the insert 28 or the elevation 29 protrudes flush in the upper side 3 or beyond the upper side 3, it being provided in particular that an underside 5" of a cover plate 5 is located on an elevation in the region of the opening 15 19, which closes the opening 15, and / or that a cover plate 4, 5 forms a window in which the substrate 10 is located. All of the features disclosed are essential to the invention (by themselves, but also in combination with one another).

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Abstract

L'invention concerne une plaque de recouvrement (4, 5) destinée à être utilisée dans un réacteur de dépôt physique en phase vapeur, la plaque de recouvrement présentant un bord périphérique s'étendant sur une ligne d'arc de cercle ou plusieurs plaques de recouvrement (4, 5) de conception identique pouvant être disposées selon une forme circulaire, de sorte que leurs bords périphériques s'étendant le long d'arcs de cercle se complètent pour former un cercle entier. Des emplacements de stockage pour des substrats (10) ou des porte-substrat portant des substrats (10) se trouvent à l'intérieur de la surface de la plaque de recouvrement. Selon l'invention, la plaque de recouvrement possède une ouverture (15) ouverte en direction de ses deux grands côtés orientés dans la direction opposée l'un à l'autre, à travers laquelle la face supérieure (3) du suscepteur (2) est visible, de sorte qu'une mesure de température optique peut être réalisée à travers l'ouverture (15).
EP19731699.5A 2018-06-19 2019-06-14 Ensemble pour la mesure de la température de surface d'un suscepteur dans un réacteur de dépôt physique en phase vapeur Pending EP3810827A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018114706 2018-06-19
DE102019114249.0A DE102019114249A1 (de) 2018-06-19 2019-05-28 Anordnung zum Messen der Oberflächentemperatur eines Suszeptors in einem CVD-Reaktor
PCT/EP2019/065721 WO2019243196A1 (fr) 2018-06-19 2019-06-14 Ensemble pour la mesure de la température de surface d'un suscepteur dans un réacteur de dépôt physique en phase vapeur

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EP3810827A1 true EP3810827A1 (fr) 2021-04-28

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US (1) US20210262087A1 (fr)
EP (1) EP3810827A1 (fr)
JP (1) JP7377824B2 (fr)
KR (1) KR20210022066A (fr)
CN (1) CN112513327B (fr)
DE (1) DE102019114249A1 (fr)
TW (1) TWI838379B (fr)
WO (1) WO2019243196A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019105913A1 (de) * 2019-03-08 2020-09-10 Aixtron Se Suszeptoranordnung eines CVD-Reaktors
CN111536911B (zh) * 2020-04-03 2021-11-23 河北普兴电子科技股份有限公司 多片外延炉装偏监测方法
DE102020117645A1 (de) 2020-07-03 2022-01-05 Aixtron Se Transportring für einen CVD-Reaktor
DE102020122198A1 (de) 2020-08-25 2022-03-03 Aixtron Se Substrathalter für einen CVD-Reaktor
DE102020123326A1 (de) * 2020-09-07 2022-03-10 Aixtron Se CVD-Reaktor mit temperierbarem Gaseinlassbereich
CN118073167B9 (zh) * 2024-04-19 2024-09-03 南京原磊纳米材料有限公司 一种多片式防绕镀自动取放腔机构

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2648638B2 (ja) * 1990-11-30 1997-09-03 三菱マテリアル株式会社 ウェーハの接着方法およびその装置
JPH04364719A (ja) * 1991-06-12 1992-12-17 Hitachi Ltd 半導体成膜装置
JP2001525997A (ja) * 1997-05-20 2001-12-11 東京エレクトロン株式会社 処理装置
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
DE10232731A1 (de) * 2002-07-19 2004-02-05 Aixtron Ag Be- und Entladevorrichtung für eine Beschichtungseinrichtung
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
JP2006173560A (ja) 2004-11-16 2006-06-29 Sumitomo Electric Ind Ltd ウエハガイド、有機金属気相成長装置および窒化物系半導体を堆積する方法
DE102004058521A1 (de) * 2004-12-04 2006-06-14 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
TW200952115A (en) 2008-06-13 2009-12-16 Huga Optotech Inc Wafer carrier and epitaxy machine using the same
DE102009010555A1 (de) 2009-02-25 2010-09-02 Siltronic Ag Verfahren zum Erkennen einer Fehllage einer Halbleiterscheibe während einer thermischen Behandlung
KR101383283B1 (ko) * 2009-11-02 2014-04-08 엘아이지에이디피 주식회사 화학기상증착장치 및 화학기상증착장치의 온도제어방법
KR101062460B1 (ko) 2009-12-16 2011-09-05 엘아이지에이디피 주식회사 화학기상증착장치의 온도제어방법
US9449858B2 (en) * 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
DE102011053498A1 (de) * 2011-09-12 2013-03-14 Aixtron Se Verfahren und Vorrichtung zur Ermittlung der Verformung eines Substrates
EP2756276A2 (fr) * 2011-09-15 2014-07-23 Oerlikon Trading AG, Trübbach Procédé pour la mesure de la température de substrats dans une chambre à vide
CN104040703B (zh) * 2012-01-26 2016-11-09 应用材料公司 具有顶部基板支撑组件的热处理腔室
DE102013111165A1 (de) * 2013-10-09 2015-04-09 Aixtron Se Vorrichtung und Verfahren zur Bestimmung der Drehlage eines Suszeptors in einer Prozesskammer
DE102013114412A1 (de) * 2013-12-18 2015-06-18 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
TWI650832B (zh) * 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
KR20150077109A (ko) * 2013-12-27 2015-07-07 엘아이지인베니아 주식회사 화학기상증착장치 및 이의 온도제어방법
JP2016035080A (ja) 2014-08-01 2016-03-17 大陽日酸株式会社 サセプタカバーおよび該サセプタカバーを備えた気相成長装置
DE102014117388A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors
KR101951136B1 (ko) * 2015-03-24 2019-02-21 쇼와 덴코 가부시키가이샤 탄화규소 단결정의 제조 방법
US9748113B2 (en) 2015-07-30 2017-08-29 Veeco Intruments Inc. Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
JP6478872B2 (ja) * 2015-08-21 2019-03-06 東京エレクトロン株式会社 成膜装置
DE102018113400A1 (de) * 2018-06-06 2019-12-12 Aixtron Se CVD Reaktor mit Tragring zum Substrathandhaben
DE102018114208A1 (de) * 2018-06-14 2019-12-19 Aixtron Se Abdeckplatte zur Abdeckung der zur Prozesskammer weisenden Seite eines Suszeptors einer Vorrichtung zum Abscheiden von SiC-Schichten
DE102019105913A1 (de) * 2019-03-08 2020-09-10 Aixtron Se Suszeptoranordnung eines CVD-Reaktors

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KR20210022066A (ko) 2021-03-02
TW202006184A (zh) 2020-02-01
DE102019114249A1 (de) 2019-12-19
US20210262087A1 (en) 2021-08-26
JP7377824B2 (ja) 2023-11-10
CN112513327B (zh) 2023-08-29
JP2021527963A (ja) 2021-10-14
CN112513327A (zh) 2021-03-16
TWI838379B (zh) 2024-04-11
WO2019243196A1 (fr) 2019-12-26

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