WO2021144161A1 - Réacteur de dépôt chimique en phase vapeur à plaque de zone d'entrée double - Google Patents

Réacteur de dépôt chimique en phase vapeur à plaque de zone d'entrée double Download PDF

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Publication number
WO2021144161A1
WO2021144161A1 PCT/EP2021/050038 EP2021050038W WO2021144161A1 WO 2021144161 A1 WO2021144161 A1 WO 2021144161A1 EP 2021050038 W EP2021050038 W EP 2021050038W WO 2021144161 A1 WO2021144161 A1 WO 2021144161A1
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Prior art keywords
plate
susceptor
substrate
temperature
flow zone
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PCT/EP2021/050038
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German (de)
English (en)
Inventor
Francesco BUTTITTA
Ilio Miccoli
Wilhelm Josef Thomas KRÜCKEN
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Aixtron Se
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Publication of WO2021144161A1 publication Critical patent/WO2021144161A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to an apparatus and a method for the deposition of III-IV layers on a substrate, in particular an MOCVD reactor and an MOCVD process.
  • the invention relates in particular to a device in which in a
  • Reactor housing a gas inlet element, a susceptor delimiting a process chamber downwards, a heating device heating the susceptor and a process chamber ceiling delimiting the process chamber upwards are arranged, the susceptor forming a substrate storage zone for receiving a substrate to be coated and on a between the gas inlet organ and the area of the susceptor arranged in the substrate storage zone, a feed zone plate rests in such a way that a free space remains between the top of the susceptor and the underside of the feed zone plate, in which there is an additional plate.
  • the invention particularly relates to a method for depositing
  • III-V semiconductor layers in a device in which in a reactor housing a gas inlet element, a susceptor delimiting a process chamber downwards, a heating device heating the susceptor and a process chamber ceiling delimiting the process chamber upwards are arranged, the susceptor being a Substrate storage zone for receiving a substrate to be coated is formed and a feed zone plate rests on an area of the susceptor arranged between the gas inlet element and the substrate storage zone in such a way that a free space remains between the top of the susceptor and the underside of the feed zone plate, in which an additional plate can be located, with the following steps:
  • the substrate storage zone has a temperature between 500 ° C. and 800 ° C. and the flow zone has a lower temperature
  • a susceptor with a circular floor plan delimits a process chamber at the bottom.
  • a gas inlet element with which hydrides of elements of main group V and organometallic compounds of elements of III.
  • Main group can be fed into the process chamber together with a carrier gas.
  • the susceptor heated by a heating device is hotter than a process chamber ceiling that delimits the process chamber at the top. As a result of this temperature difference, a vertical temperature gradient forms in the process chamber. Heat flows from the susceptor to the process chamber ceiling.
  • the susceptor is surrounded by a gas outlet element.
  • the susceptor In an area adjacent to the gas outlet element, the susceptor forms a substrate storage zone. In this substrate storage zone there is a multiplicity of substrates which are arranged around the gas inlet element at a uniform distance from the gas inlet element. A flow zone extends between the sub stratlagerzone and the gas inlet member. In the advance zone, on the upward-facing side of the susceptor, there is a running plate. An annular intermediate plate is located in a free space between the underside of the feed plate and the upwardly facing side of the susceptor. A temperature control gas is fed into the spaces between the flow plate and the intermediate plate as well as the intermediate plate and the susceptor. By varying the composition of the gas, its thermal conductivity can be adjusted. By changing the thermal conductivity of the tempering gas, the heat flow from the flow zone to the process chamber ceiling is varied, and thus the surface temperature of the flow zone.
  • a MOCVD reactor is also described in US 2004/0003779.
  • DE 10056029 A1 describes a method for temperature control of the surface temperatures of substrates which are stored on substrate holders which in turn lie in pockets of a susceptor and are carried there by a gas cushion. Due to the height of the gas cushion, the surface temperature of a substrate can be adjusted in such a way that the surface temperatures of all substrates have essentially the same value.
  • the invention is based on the object of further developing the generic device and the generic ate method in particular to the effect that the surface temperatures of the substrates can be varied more effectively individually.
  • Another object of the invention is to provide a device and a method with which layers for optoelectronic components can be manufactured, the parameters of which influencing the wavelength lie within narrow tolerances.
  • the layer properties of the layers of the plurality of layers produced simultaneously in a process chamber during a run may have only minimal differences. Tight tolerances on layer thickness and layer composition of ternary and quaternary III-V layers are required so that the wavelengths of the optoelectronic components, lasers or LEDs produced with the layer sequences differ only slightly.
  • the growth temperature has a significant influence on the layer parameters influencing the wavelength. With the method described in DE 10056029 A1, the surface temperature of the substrates is to be kept at an average value by an individual control of the height of the gas cushion.
  • the temperature of the surface of the advance zone must be lower than the temperature on the substrates. If the feed zone has the same temperature as the substrate storage zone or even a higher temperature, the substrate temperatures cannot be individually influenced to the required extent. According to the invention, it is proposed to lower the flow zone temperature to a temperature below the substrate temperature.
  • the temperature is preferably lowered in a range from 10 ° C to 40 ° C or 20 ° C to 40 ° C.
  • the pre-run zone temperature is preferably about 25 ° C. below the substrate temperature. The latter is preferably in a range between 500 ° C and 800 ° C.
  • the surface temperatures of the substrates can be varied by an individual energy flow.
  • the susceptor is locally heated or cooled in the areas in which a substrate is located.
  • Local heating is possible, for example, by adding radiant heat, for example with a laser beam.
  • Surface temperatures of the substrates can be changed individually by modifying a gas cushion on which a substrate holder carrying a substrate rests. This can be done by changing the height of the gas cushion.
  • it is also possible to change the thermal conductivity of the gas forming the gas cushion for example by creating the gas cushion from a mixture of two gases, one of which has a high thermal conductivity and the other has a low thermal conductivity.
  • a process gas is fed into the process chamber through the gas inlet element.
  • the process gas has at least one first reactive gas, wel Ches an element of III. Main group, for example gallium, indium or aluminum and in particular is an organometallic compound.
  • It has at least one second reactive gas, which is an element of main group V, for example arsenic, phosphorus or nitrogen.
  • the second reactive gas can be a hydride.
  • the two reactive gases are conveyed together with a carrier gas, for example hydrogen.
  • Pre-decomposition takes place within a lead zone, which according to the invention takes place at a temperature which is lower than the surface temperature of the substrate.
  • activation of the starting materials fed into the process chamber through the gas inlet element also takes place in the flow zone. The activation obeys an exponential function, so that it is sufficient to lower the temperature in the flow zone to the above-mentioned, for example, 10 to 40 ° C compared to the temperature in the substrate storage zone.
  • the surface temperature of the substrates can be varied by, for example, +/- 3 or +/- 5 ° C.
  • the inven- The device according to the invention is characterized in that the additional plate and the flow zone plate are congruent on top of one another.
  • the invention thus provides for a doubling of the flow zone plate.
  • the additional plate and the flow zone plate preferably have the same floor plan.
  • the lead zone plate can be electrically conductive. You can for example consist of graphite.
  • the surface of the advance zone plate can be coated.
  • the additional plate can be electrically insulating. It can consist of quartz or a ceramic material.
  • the Vorlaufzo nenplatte and the additional plate each have a central opening.
  • the gas inlet element which is arranged centrally in the process chamber and has a preferably circular outline can be inserted in the central opening.
  • the central opening of the flow zone plate and additional plate then also has a circular shape.
  • the flow zone plate and the additional plate each consist of one piece. It is each a flat body.
  • the peripheral edges of the additional plate and the flow zone plate can directly adjoin the circular disk-shaped substrate holder. In this respect, the peripheral edge of the additional plate and flow zone plate forms a plurality of juxtaposed indentations, each indentation extending along a circular arc line.
  • the additional plate is spaced from the top of the susceptor facing the process chamber by a gap.
  • the gap height can be around 0.8 mm +/- 10 percent.
  • the material thickness of the additional plate can be 3.2 mm +/- 10 percent.
  • the distance from the top of the susceptor to the top of the lead zone plate can be 9.6 mm +/- 10 percent. It can thus be provided that the height of the gaps is the same. It can also be provided that the gap height is in the range between a fifth and a third of the material thickness of the additional plate.
  • the gap height of each of the two gaps is preferably ⁇ 1 mm.
  • the material thickness of the flow zone plate can be greater than the material thickness of the additional plate.
  • the material thickness can be at least five times as large as the gap be high.
  • spacer elements can be used. First spacer elements can be provided with which the advance zone plate is supported on the upper side of the susceptor. These first spacer elements can reach through openings in the additional plate.
  • the additional plate can have second spacer elements which are supported on the upper side of the susceptor. The resulting two gaps have the same vertical gap spacing over their entire surface extending in a horizontal plane, so that all the broad sides of the additional plate and the advance zone plate run parallel to one another.
  • the spacer elements can be attached to the additional plate or the flow zone plate.
  • a gas for example temperature control gas
  • an additional plate which has the same layout as the flow zone plate, several gaps with a small gap width are formed. During a deposition process, no gas can flow through these gaps. Due to the small gap width, only a small amount of the process gas diffuses into the free space below the flow zone plate, so that an acceptable parasitic deposition takes place there.
  • the two extending parallel to each other create the column together with the additional plate consisting in particular of quartz or a ceramic material, a thermal insulation zone below the flow zone plate.
  • the flow zone plate preferably has a greater thermal conductivity than the additional plate which fulfills the task of an insulation plate. In the plan view, the flow zone plate and the additional plate have a star-shaped appearance.
  • FIG. 1 shows a plan view of a susceptor 2 of a CVD reactor, approximately according to section line II in FIG. 2,
  • FIG. 2 shows a section through a CVD reactor along the section line II-II in FIG. 1 in a schematic representation
  • FIG. 3 enlarges the detail III from FIG. 2,
  • FIG. 4 is a perspective view of a flow zone plate 10 according to the invention and an additional plate 11 according to the invention,
  • FIG. 5 shows a representation similar to FIGS. 2 or 3 and additionally the temperature profile of the surface of the flow zone plate 10 and of the substrate 4 in the radial direction R in the process chamber.
  • FIG. 2 shows schematically the structure of a CVD reactor according to the invention.
  • a gas-tight housing 1 Inside a gas-tight housing 1 is a circular disk-shaped susceptor 2 made of graphite and in particular coated graphite, which is heated from below with a heating device 6 by heat radiation or by generating a high-frequency alternating electromagnetic field.
  • the susceptor 2 is supported by a shaft 19 which can also form an axis of rotation with which the susceptor 2 can be driven in rotation about its figure axis.
  • Above the center of the susceptor 2 Above the center of the susceptor 2 is a substantially cylindrical gas inlet gate 5, through which a process gas can be fed into a process chamber 8.
  • the process chamber 8 extends from the gas inlet element 5 between susceptor 2 and a process chamber ceiling 7 in a radially outward direction to towards a gas outlet element 20.
  • the gas outlet element 20 is connected to a gas line (not shown) with a vacuum pump with which the interior of the housing 1 can be evacuated.
  • the process chamber 8 has two peripheral zones.
  • a radially inner circumferential zone adjoining the gas inlet element 5 forms a flow zone V.
  • a zone adjoining the flow zone V in a radially outward direction forms a substrate storage zone S.
  • the substrate storage zone S is followed by the gas outlet element 20, which surrounds the susceptor 2 in a circular manner .
  • Each substrate holder 3 consists of a circular disk-shaped flat body, for example made of graphite.
  • the underside of the substrate holder 3 can be flat or curved.
  • the top of the substrate holder 3 can have a recess for receiving a substrate 4.
  • a purge gas can be fed in by means of a gas supply line, not shown, with which the substrate holder 3 is raised and rotated about its figure axis. Due to the height of the gas cushion 21 thus generated, the temperature Ts of the substrate 4 resting on the sub strathalter 3 can be varied.
  • the gas cushions can be individually adjusted for this purpose.
  • a flow zone plate 10 which is shown in FIG. 4, extends in the flow zone V.
  • the flow zone plate 10 is made of graphite, in particular special coated graphite and has an opening 15 in its center, in which the gas inlet element 5 is inserted.
  • the flow zone plate 10 completely fills the area between the gas inlet element 5 and the substrate holders 3 extending on a circular arc line around the center of the susceptor 2. you has indentations that run on a circular arc line. The indentations adjoin the substrate holder 3. The spaces between the indentations extend up to the radial height at which the distance between two adjacent substrate holders 3 is minimal. They give the flow zone plate 10 a star-shaped shape. Additional cover plates can be provided radially outside the flow zone plate 10.
  • the additional plate 11 is an insulation plate and has the same outline as the flow zone plate 10.
  • the gas inlet element 5 is also inserted in its central opening 17.
  • the additional plate 11 has the same indentations as the flow zone plate 10 and adjoins the substrate holder 3 in the same way with its indentations on.
  • the flow zone plate 10 is supported with spacer elements 14 on the upper side 2 ′ of the susceptor 2.
  • the additional plate 11 has openings 14 through which the spacer elements 14 protrude.
  • the additional plate 11 also has spacer elements 18 with which it is supported on the top 2 'of the Sus 2 receptor.
  • the spacer elements 14, 18 are evenly distributed Winkelver around the center of the flow zone plate 10 or additional plate 11 is arranged.
  • a distance a of the top 2 'of the susceptor 2 from the top of the flow zone plate 10 facing the process chamber 8 is approximately 10 mm, preferably approximately 9.6 mm.
  • a distance b of a gap 12 between Vorlaufzo nenplatte 10 and additional plate 11 is preferably about 0.8 mm.
  • a distance c of a gap 13 between the top 2 'of the susceptor 2 and the bottom of the additional plate 11 is preferably 0.8 mm.
  • the distance between the bottom 10 'of the lead zone plate 10 and the top 2' of the susceptor 2 is about 4.8 mm before given.
  • the fiction, contemporary arrangement of flow zone plate 10 and additional plate 11 enables a method to be carried out in which III-V layers are deposited on a substrate in order to produce optoelectronic components in which the temperatures Ts by an individual variation Substrates 4 the wavelengths of the band transitions of the layers are almost identical.
  • reactive gases are conveyed to the gas inlet element 5.
  • the first reactive gases can be hydrides of the elements arsenic, phosphorus or nitrogen.
  • Second reactive gases can be organometallic compounds of gallium, indium or aluminum.
  • a total of three reactive gases or four reactive gases are preferably fed simultaneously together with a carrier gas through the gas inlet element 5 into the process chamber 8, so that ternary or quaternary layers are deposited on the substrates.
  • the layer composition depends on the temperature Ts of the susceptor and on the partial pressures of the reactive gases.
  • the wavelengths of optical components whose layers are deposited using the method depend on the layer composition. It is therefore necessary that each substrate holder or each substrate has the same substrate temperature Ts during the deposition process.
  • the substrate temperature Ts is regulated, it is varied slightly by a middle temperature which is between 500 ° C. and 800 ° C.
  • the temperature Ts is preferably varied by influencing the gas cushion 21.
  • the arrangement of the flow zone plate 10 and the additional plate 11 reduce the temperature Tv on the side of the flow zone plate 10 facing the process chamber 8 by 10 to 40 ° C is lower than the temperature Ts of the substrate.
  • the temperature difference between the temperature Tv of the flow zone V and the temperature Ts of the substrate 4 or the substrate storage zone S is preferably 25 ° C, in particular at least 25 ° C. Due to the lower flow zone temperature Tv compared to the substrate temperature Ts, a temperature variation due to gap height perform hen variation.
  • FIG. 5 shows schematically the course of the surface temperature of the flow zone plate 10 and the substrate 4 in the radial direction R.
  • the flow zone temperature Tv is lower than the substrate temperature Ts.
  • the flow zone temperature Tv can be in a range between an upper temperature TI and a lower temperature T2, the lower tempera ture TI is about 10 or 20 ° C lower than the substrate temperature Ts and the lower temperature T2 is, for example, 50 ° C lower than the substrate temperature Ts.
  • a device which is characterized in that the additional plate 11 and the lead zone plate 10 are congruent one above the other.
  • a device which is characterized in that the vertical height of the free space 12, 13 is chosen so that the temperature of the Vorlaufzo- ne V is 10 to 40 ° C or 20 ° C to 40 ° C lower than the temperature of the substrate storage zone S.
  • a device or a method which is characterized in that there is an additional plate 11 in the free space 12, 13, which in particular has a plan that matches the flow zone plate 10 and / or that the flow zone plate 10 is electrically conductive and / or off There is graphite and / or that the additional plate 11 has a lower thermal conductivity than the flow zone plate 10.
  • a device or a method which is characterized in that the additional plate 11 is electrically insulating and / or consists of quartz and / or a ceramic material.
  • a device or a method which is characterized by first spacer elements 14 with which the flow zone plate 10 is held at a predetermined first distance d from the top 2 'of the substrate holder 2 and by second spacer elements 18 with which the additional plate 11 is held at a predetermined second distance c from the top of the substrate holder 3, the additional plate 11 having openings 16 through which the first distance elements 14 reach.
  • a device or a method which is characterized in that the flow zone plate 10 and the additional plate 11 are each a flat piece with flat broad side surfaces and the flow zone plate 10 and the inlet Set plate 11 extend parallel to one another and parallel to the flat upper side 2 'of the susceptor 2.
  • a device or a method which is characterized in that the vertical distance of the additional plate 11 compared to the top 21 of the susceptor extending in a horizontal plane is 20.8 mm +/- 10% and the vertical distance of the lead zone plate 10 opposite of the additional plate 11 is 0.8 mm +/- 10% and / or that the vertical distance between the top of the lead zone plate 10 and the top of the susceptor is 29.6 mm +/- 10% and / or that the material thickness of the additional plate is 113.2 mm +/- 10%.

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Abstract

L'invention concerne un dispositif dans lequel un élément d'entrée de gaz (5), un suscepteur délimitant une chambre de traitement (8) vers le bas, un dispositif de chauffage (6) chauffant le suscepteur (2) et un couvercle de chambre de traitement (7) délimitant la chambre de traitement (8) vers le haut, sont montés dans un boîtier de réacteur (1), le suscepteur (2) formant une zone de support de substrat (5) destinée à recevoir un substrat (4) à munir d'un revêtement et une plaque de zone d'entrée (10) reposant sur une zone du suscepteur (2) agencée entre l'élément d'entrée de gaz (5) et la zone de support de substrat (S), de sorte qu'un espace dégagé (12, 13), dans lequel se situe une plaque additionnelle (11), subsiste entre la face supérieure (2') du suscepteur (2) et une face inférieure (10') de la plaque de zone d'entrée (10). L'invention concerne en outre un procédé de dépôt de couches de semi-conducteurs des groupes III-V. Selon l'invention, une plaque de zone d'entrée (10, 11) double destinée à maintenir dans une plage de tolérance étroite les paramètres, qui dans le cas de composants optoélectroniques influent sur leurs longueurs d'onde, de sorte que la température de la zone d'entrée est inférieure de 10 à 40°C, comparativement à la température du substrat.
PCT/EP2021/050038 2020-01-17 2021-01-05 Réacteur de dépôt chimique en phase vapeur à plaque de zone d'entrée double WO2021144161A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020101066.4 2020-01-17
DE102020101066.4A DE102020101066A1 (de) 2020-01-17 2020-01-17 CVD-Reaktor mit doppelter Vorlaufzonenplatte

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WO2021144161A1 true WO2021144161A1 (fr) 2021-07-22

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021103368A1 (de) 2021-02-12 2022-08-18 Aixtron Se CVD-Reaktor mit einem ein Gaseinlassorgan umgebenden Temperrierring

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10056029A1 (de) 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US20040003779A1 (en) 2000-09-01 2004-01-08 Holger Jurgensen Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
DE10323085A1 (de) * 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
EP2398047A2 (fr) * 2010-06-15 2011-12-21 Samsung LED Co., Ltd. Suscepteur et appareil de dépôt de vapeur chimique l'incluant
DE102014114099A1 (de) * 2013-10-04 2015-04-09 Hermes Epitek Corporation Gasphasen-Schichtabscheidung-Vorrichtung
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040003779A1 (en) 2000-09-01 2004-01-08 Holger Jurgensen Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
DE10056029A1 (de) 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
DE10323085A1 (de) * 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
EP2398047A2 (fr) * 2010-06-15 2011-12-21 Samsung LED Co., Ltd. Suscepteur et appareil de dépôt de vapeur chimique l'incluant
DE102014114099A1 (de) * 2013-10-04 2015-04-09 Hermes Epitek Corporation Gasphasen-Schichtabscheidung-Vorrichtung
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung

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TW202140845A (zh) 2021-11-01

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