TW202140845A - 具有雙重前置區板的cvd反應器 - Google Patents

具有雙重前置區板的cvd反應器 Download PDF

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TW202140845A
TW202140845A TW110100905A TW110100905A TW202140845A TW 202140845 A TW202140845 A TW 202140845A TW 110100905 A TW110100905 A TW 110100905A TW 110100905 A TW110100905 A TW 110100905A TW 202140845 A TW202140845 A TW 202140845A
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substrate
temperature
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additional
process chamber
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弗朗西斯科 布蒂塔
伊利歐 米科利
威廉 約瑟夫 湯瑪斯 克呂肯
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德商愛思強歐洲公司
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Abstract

本發明係有關於一種裝置，其中在反應器殼體(1)中設有氣體入口構件(5)、在下方界定製程室(8)的基板座、對基板座(2)進行加熱的加熱裝置(6)、以及在上方界定製程室(8)的製程室頂部(7)，其中，基板座(2)形成用於容置待塗佈之基板(4)的基板支承區(S)，以及在基板座(2)之位於氣體入口構件(5)與基板支承區(S)之間的區域內設有前置區板(10)，使得在基板座(2)之頂側(2')與前置區板(10)之底側(10')之間留有自由空間(12、13)，在此自由空間中設有附加板(11)。本發明亦有關於一種沉積Ⅲ-Ⅴ族半導體層的方法。為將就光電子器件而言影響器件之波長的參數保持在較窄之公差範圍內，提出將前置區板(10、11)倍增，使得前置區之溫度比基板溫度低10至40℃。

Description

具有雙重前置區板的CVD反應器
本發明係有關於用於在基板上沉積Ⅲ-V族層的一種裝置及一種方法，特別是有關於一種MOCVD反應器以及一種MOCVD方法。
本發明特別是有關於一種裝置，其中在反應器殼體中設有氣體入口構件、在下方界定製程室的基板座、對該基板座進行加熱的加熱裝置、以及在上方界定該製程室的製程室頂部，其中，該基板座形成用於容置待塗佈之基板的基板支承區，以及在基板座之位於該氣體入口構件與該基板支承區之間的區域內設有前置區板，使得在基板座之頂側與該前置區板之底側之間留有自由空間，在該自由空間中設有附加板。
本發明特別是有關於一種在裝置中沉積Ⅲ-Ⅴ族半導體層的方法，其中在反應器殼體中設有氣體入口構件、在下方界定製程室的基板座、對該基板座進行加熱的加熱裝置、以及在上方界定該製程室的製程室頂部，其中，該基板座形成用於容置待塗佈之基板的基板支承區，以及在基板座之位於該氣體入口構件與該基板支承區之間的區域內設有前置區板，使得在基板座之頂側與該前置區板之底側之間留有自由空間，在該自由空間中可設有附加板，具有下列步驟： -藉由該加熱裝置對該基板座進行加熱，並在製程室中產生豎向溫度梯度，使得該製程室頂部之溫度小於基板座，該基板支承區具有介於500℃與800℃之間的溫度，且該前置區具有更低的溫度； -透過該氣體入口構件將製程氣體饋送入前置區，其中，該製程氣體包含至少一個含有第Ⅲ主族之元素的第一反應氣體、至少一個含有第Ⅴ主族之元素的第二反應氣體、以及載氣。
DE 10 2014 104 218 A1揭示過一種同類型的方法以及一種同類型的裝置。具有圓形基本輪廓的基板座在下方界定製程室。在圓形製程室之中心處設有氣體入口構件，藉由此氣體入口構件將第Ⅴ主族之元素之氫化物以及第Ⅲ主族之元素之有機金屬化合物與載氣一起饋送入製程室。經加熱裝置加熱之基板座較在上方界定製程室之製程室頂部更熱。基於此溫差，在製程室中形成豎向溫度梯度。熱自基板座流動至製程室頂部。基板座係經氣體出口構件包圍。在與氣體出口構件相鄰之區域內，基板座形成基板支承區。在此基板支承區中設有數個基板，其以與氣體入口構件間隔均勻距離的方式圍繞氣體入口構件設置。一前置區在基板支承區與氣體入口構件之間延伸。在前置區中，前置板位於基板座之朝上側上。在位於前置板之底側與基板座之朝上側之間的自由空間中，設有環形的中間板。將調溫氣體饋送入位於前置板與中間板之間以及中間板與基板座之間的中間腔。透過改變氣體之組成，能夠調節其導熱特性。透過改變調溫氣體之導熱特性，改變自前置區至製程室頂部的熱流，進而改變前置區之表面溫度。
此外，在US 2004/ 0003779中描述過一種MOCVD反應器。DE 100 56 029 A1描述過一種對基板之表面溫度進行溫度控制的方法，此等基板係支承在基板架上，此等基板架又位於基板座之腔槽中，並在該處經氣墊承載。透過氣墊之高度能夠對基板之表面溫度進行均衡，使得所有基板之表面溫度大體具有同一值。
本發明之目的在於：特別是以利於使用的方式對同類型之裝置以及同類型之方法進行改進，以便更加有效地個別調節基板之表面溫度。本發明之目的還在於：提供一種裝置以及一種方法，藉此能夠製造針對光電子器件之層，其影響波長的參數處於較窄之公差範圍內。
該目的透過申請專利範圍所給出之發明而達成，其中，附屬項不僅為並列請求項所給出之發明的改良方案，亦為該目的之獨創解決方案。
在藉由同類型之方法製造針對光電子器件之層的過程中，在一製程室中在一運行期間同時製造之數個層的層特性僅允許具有最小程度的區別。要求三元及四元Ⅲ-Ⅴ族層之層厚及層組成具有較窄之公差，使得藉由層序列製造之光電子器件、雷射器或LED之波長僅具有微小區別。生長溫度對影響波長之層參數有巨大影響。藉由在DE 100 56 029 A1中描述的方法，期望透過對氣墊之高度之個別控制將基板之表面溫度保持在平均值。在本申請前之研究表明，為了確保此方法之有效性，前置區之表面之溫度必須低於基板上之溫度。若前置區之溫度與基板支承區相同甚或更高，則無法在需要的範圍內個別地調整基板溫度。本發明提出：將前置區溫度降低至一低於基板溫度的溫度。較佳地，以10℃至40℃或20℃至40℃的範圍降低該溫度。較佳地，該前置區溫度較基板溫度低約25℃。後者較佳落在介於500℃與800℃之間的範圍內。可透過個別的能量流改變基板之表面溫度。例如可採用以下方案：在設有基板之區域內對基板座進行局部加熱或冷卻。例如可以透過添加輻射熱、例如藉由雷射束來實現局部升溫。但亦可對設有將基板承載之基板架的氣墊進行修改，藉此個別地改變基板之表面溫度。此舉可透過改變氣墊之高度實現。但亦可如下改變構成氣墊之氣體之導熱性：例如用兩個氣體之混合物產生該氣墊，其中一氣體具有高導熱性，而另一氣體具有低導熱性。基於自加熱裝置起經過基板座、經過氣墊、經過基板架、經過基板以及經過製程室直至製程室頂部的熱流，能夠藉由熱阻之變化個別地改變基板之溫度。為了在處於基板支承區中之基板上沉積Ⅲ-Ⅴ族層，透過該氣體入口構件將製程氣體饋送入製程室。該製程氣體具有至少一個第一反應氣體，其包含第Ⅲ主族之元素，例如鎵、銦或鋁，並且特別是為有機金屬化合物。該製程氣體具有至少一個第二反應氣體，其包含第Ⅴ主族之元素，例如砷、磷或氮。該第二反應氣體可為氫化物。將該二反應氣體與諸如氫氣的載氣一起輸送。在前置區內發生預分解，該預分解根據本發明在低於基板之表面溫度的溫度下進行。此外，在該前置區中亦發生透過氣體入口構件饋送入製程室之起始材料的活化。該活化遵循指數函數，故將前置區中之溫度較基板支承區中之溫度例如如上文所述降低10至40℃便已足夠。透過改變氣墊之高度，或者透過局部的能量輸入，或者透過改變構成氣墊之氣體的組成，能夠使基板之表面溫度改變例如+/-3或+/-5℃。本發明之裝置之特徵在於：該附加板與該前置區板係全等地交疊。因此，本發明採用雙重的前置區板。該附加板與該前置區板較佳具有相同的基本輪廓。該前置區板可具備導電性。該前置區板例如可由石墨構成。該前置區板之表面可經塗佈。該附加板可電絕緣。該附加板可由石英或陶瓷材料構成。在一較佳技術方案中，該前置區板與該附加板分別具有一中央開口。居中設於製程室中之氣體入口構件可插在該中央開口中，該氣體入口構件具有較佳呈渾圓形的基本輪廓。在此情形下，前置區板以及附加板之中央開口亦呈圓形。根據另一較佳技術方案，該前置區板以及該附加板分別為一體式組件。其各自為扁平體。附加板以及前置區板之周緣可與圓盤形基板架直接鄰接。就此而言，附加板以及前置區板之周緣構成數個並排的凹部，其中，每個凹部皆沿一圓弧線延伸。根據本發明之一較佳技術方案，該附加板係透過一間隙與該基板座之面向製程室的頂側間隔開。該間隙高度可為約0.8 mm +/-10%。該附加板之材料厚度可為3.2 mm +/-10%。該基板座之頂側與該前置區板之頂側的距離可為9.6 mm +/-10%。故可採用以下方案：該二間隙之高度相同。還可採用以下方案：該間隙高度落在介於附加板之材料厚度之五分之一與三分之一之間的範圍內。該二間隙中之任一個的間隙高度皆較佳＜1 mm。該前置區板之材料厚度可大於該附加板之材料厚度。該材料厚度可至少為間隙高度之五倍。為了調節基板座之頂側與前置區板之底側之間的自由空間、即間隙高度，可使用間隔元件。可設有第一間隔元件，該前置區板藉由該等第一間隔元件支撐在基板座之頂側上。此等第一間隔元件可穿過附加板之開口。該附加板可具有第二間隔元件，其支撐在基板座之頂側上。由此產生之兩個間隙在其整個在水平平面中延伸之面的範圍內具有相同的豎向間隙距離，故附加板以及前置區板之所有寬側皆相互平行延伸。該等間隔元件可固定在附加板或前置區板上。藉由CVD反應器之基板座配置之根據本發明的技術方案，毋需將諸如調溫氣體的氣體饋送入自由空間或間隙。透過使用基本輪廓與前置區板相同的附加板，形成數個具有較小之間隙寬度的間隙。在沉積製程期間，氣體無法穿過此間隙流動。由於間隙寬度較小，製程氣體中僅少量擴散入位於前置區板下方之自由空間，致使在該處發生可容許的寄生沉積。該二相互平行延伸之間隙與特別是由石英或陶瓷材料構成之附加板一起實現位於前置區板下方的隔熱區。該前置區板之導熱性較佳高於充當絕緣板的附加板。在俯視圖中，前置區板與附加板具有星形外觀。
圖2示意性示出本發明之CVD反應器之結構。在氣密之殼體1內設有由石墨以及特別是由包覆石墨構成之圓盤狀的基板座2，藉由加熱裝置6透過熱輻射，或透過產生高頻交變電磁場對該基板座進行加熱。藉由桿部19對基板座2進行支撐，該桿部亦可構成一旋轉軸，藉由該旋轉軸能夠將基板座2圍繞其圖形軸旋轉驅動。在基板座2之中心之上方設有大體呈圓柱形的氣體入口構件5，透過該氣體入口構件能夠將製程氣體饋送入製程室8。製程室8自氣體入口構件5起在基板座2與製程室頂部7之間沿徑向向外方向延伸至氣體出口構件20。氣體出口構件20係藉由未繪示之氣體管線與一真空泵連接，該真空泵用於將殼體1之內部抽真空。
製程室8具有兩個周區。與氣體入口構件5鄰接之徑向內周區構成前置區V。沿徑向向外方向與前置區V鄰接之區構成基板支承區S。基板支承區S與呈圓形將基板座2包圍的氣體出口構件20鄰接。
在基板支承區S中以圍繞基板架3之中心均勻分佈的方式設有數個(在本實施例中為十二個)基板架3。每個基板架3皆由圓盤狀扁平體構成，例如由石墨構成。基板架3之底側可以是平整或拱曲的。基板架3之頂側可具有用於容置基板4的凹口。在位於基板座2之設有基板架3的腔槽的底部之間的中間腔中，可藉由未繪示之氣體輸送管線饋送沖洗氣體，藉由該沖洗氣體將基板架3抬升並使得基板架圍繞其圖形軸旋轉。透過由此產生之氣墊21的高度，能夠改變設於基板架3上之基板4的溫度Ts。為此，該等氣墊係可個別地調節。
如圖4所示之前置區板10在前置區V中延伸。前置區板10由石墨、特別是包覆石墨構成，並且在其中心處具有開口15，氣體入口構件5插在該開口中。前置區板10將位於氣體入口構件5與沿圓弧線圍繞基板座2之中心延伸的基板架3之間的區域完全填滿。該前置區板具有若干凹部，其沿圓弧線延伸。該等凹部與基板架3鄰接。位於該等凹部之間的中間腔延伸至一徑向高度，在該徑向高度上，兩個相鄰之基板架3之間的距離係最小。該等凹部使得前置區板10具有星形造型。在前置區板10徑向外部可設有補充性的蓋板。
在前置區板10下方設有由石英或陶瓷材料構成之附加板11。附加板11為絕緣板，並且具有與前置區板10相同的基本輪廓。氣體入口構件5同樣插在該附加板之中央開口17中。附加板11具有與前置區板10相同的凹部，並藉由其凹部以相同的方式與基板架3鄰接。
前置區板10藉由間隔元件14支撐在基板座2之頂側2'上。附加板11具有開口16，間隔元件14穿過該等開口伸出。附加板11亦具有間隔元件18，附加板藉由該等間隔元件支撐在基板座2之頂側2'上。間隔元件14、18係以均勻的角度分佈圍繞前置區板10或附加板11之中心設置。
基板座2之頂側2'與前置區板10之面向製程室8之頂側的距離a為約10 mm，較佳為約9.6 mm。前置區板10與附加板11之間的間隙12的距離b較佳為約0.8 mm。基板座2之頂側2'與附加板11之底側之間的間隙13的距離c較佳為0.8 mm。前置區板10之底側10'與基板座2之頂側2'之距離較佳為約4.8 mm。
基於前置區板10以及附加板11之根據本發明的佈局，能夠實施一種方法，其中將Ⅲ-Ⅴ族層沉積在基板上，以便由此製造光電子器件，其中透過個別地改變基板4之溫度Ts，層之能帶躍遷的波長近乎相同。藉由適合的進入管線以及未繪示之氣體混合系統，將反應氣體輸送至氣體入口構件5。第一反應氣體可為砷、磷或氮元素之氫化物。第二反應氣體可為鎵、銦或鋁之有機金屬化合物。較佳地，同時將總共三個反應氣體或四個反應氣體與載氣一起透過氣體入口構件5饋送入製程室8，從而在基板上沉積三元或四元層。層組成係與基板座之溫度Ts以及與反應氣體之分壓相關。就透過該方法沉積層的光學器件而言，其波長係與層組成相關。因此，需要每個基板架或每個基板在沉積製程期間具有相同的基板溫度Ts。在調節基板溫度Ts的過程中，圍繞介於500℃與800℃之間的平均溫度略微地改變此基板溫度。其中，較佳透過影響氣墊21來改變溫度Ts。為此，重要之處在於：透過設置前置區板10以及附加板11，與基板之溫度Ts相比，前置區板10之面向製程室8的一側上的溫度Tv低10至40℃。較佳地，前置區V之溫度Tv與基板4或基板支承區S之溫度Ts之間的溫差為25℃，特別是至少為25℃。由於前置區溫度Tv較基板溫度Ts更低，能夠透過改變間隙高度來改變溫度。較佳不經沖洗氣體沖洗之間隙12、13構成怠體積。但由於間隙高度較小，在該處發生可容許的寄生生長。
圖5示意性示出前置區板10以及基板4之表面溫度之沿徑向R的特性曲線。前置區溫度Tv係低於基板溫度Ts。前置區溫度Tv可處於介於上限溫度T1與下限溫度T2之間的範圍內，其中，上限溫度T1例如較基板溫度Ts低10或20℃，以及下限溫度T2例如較基板溫度Ts低50℃。
在前置區板10或中間板11與基板架3之間，亦有如圖1所示之氣隙22延伸。在此氣隙22中，前置區溫度Tv近乎驟然變為基板溫度Ts。
前述實施方案係用於說明本申請整體所包含之發明，該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案，其中，此等特徵組合中的兩項、數項或其全部亦可相互組合，即：
一種裝置，其特徵在於：附加板11與前置區板10係全等地交疊。
一種裝置，其特徵在於：自由空間12、13之豎向高度係選擇以使前置區V之溫度比基板支承區S之溫度低10至40℃或20℃至40℃。
一種裝置或一種方法，其特徵在於：在自由空間12、13中設有附加板11，其特別是具有與前置區板10一致的基本輪廓，以及/或者，前置區板10具備導電性及/或由石墨構成，以及/或者，附加板11之導熱性低於前置區板10。
一種裝置或一種方法，其特徵在於：附加板11係電絕緣以及/或者由石英及/或陶瓷材料構成。
一種裝置或一種方法，其特徵在於：前置區板10與附加板11分別具有中央開口15、17，氣體入口構件5插在該開口中，以及/或者，前置區板與附加板分別為一體式組件。
一種裝置或一種方法，其特徵在於第一間隔元件14以及第二間隔元件18，透過該等第一間隔元件以與基板座2之頂側2'間隔預定之第一距離d的方式保持前置區板10，透過該等第二間隔元件以與基板座2之頂側間隔預定之第二距離c的方式保持附加板11，其中，附加板11具有開口16，第一間隔元件14穿過該等開口。
一種裝置或一種方法，其特徵在於：前置區板10與附加板11分別為具有平整的寬側面的扁平件，以及前置區板10與附加板11以相互平行並且平行於基板座2之平整頂側2'的方式延伸。
一種裝置或一種方法，其特徵在於：附加板11與基板座2之在水平平面中延伸之頂側2'的豎向距離為0.8 mm +/-10%，且前置區板10與附加板11的豎向距離為0.8 mm +/-10%，以及/或者，前置區板10之頂側與基板座2之頂側的豎向距離為9.6 mm +/-10 %，以及/或者，附加板11之材料厚度為3.2 mm +/-10%。
一種方法，其特徵在於：前置區V之溫度Tv與基板4之溫度Ts之間的溫差大於25℃，以及/或者，不將調溫氣體饋送入自由空間12、13，以及/或者，分別對設於基板支承區S中之數個基板4之基板溫度進行個別調節，以及/或者，透過改變能量流或透過承載基板架3之氣墊的高度或組成來改變每個基板4之基板溫度，以及/或者，該第Ⅴ主族之元素為砷或磷。
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容，該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明(即使不含相關請求項之特徵)，其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一或數項。本發明亦有關於如下設計形式：前述說明中所述及之個別特徵不實現，特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。
1:殼體 2:基板座 2':頂側 3:基板架 4:基板 5:氣體入口構件 6:加熱裝置 7:製程室頂部 8:製程室 9:出氣開口 10:前置區板 10':底側 11:附加板 12:間隙，自由空間 13:間隙，自由空間 14:間隔元件 15:中央開口 16:開口 17:中央開口 18:間隔元件 19:桿部 20:氣體出口構件 21:氣墊 22:氣隙 a:距離 b:距離 c:距離 d:距離 R:徑向 S:基板支承區 T1:上限溫度 T2:下限溫度 Ts:基板溫度 Tv:前置區溫度 V:前置區
下面結合附圖對本發明之一實施例進行詳細說明。其中： 圖1為CVD反應器之基板座2之俯視圖，例如根據圖2中之剖面線Ⅰ-Ⅰ， 圖2為CVD反應器之沿圖1中之剖面線Ⅱ-Ⅱ的示意性剖視圖， 圖3為圖2中之局部Ⅲ的放大圖， 圖4為本發明之前置區板10以及本發明之附加板11的透視圖， 圖5為類似於圖2或圖3的示意圖，並且額外地示出製程室中之前置區板10及基板4之表面沿徑向R的溫度特性曲線。
2:基板座
3:基板架
4:基板
5:氣體入口構件
7:製程室頂部
8:製程室
9:出氣開口
10:前置區板
11:附加板
14:間隔元件
18:間隔元件
21:氣墊
22:氣隙
R:徑向
S:基板支承區
T1:上限溫度
T2:下限溫度
Ts:基板溫度
Tv:前置區溫度
V:前置區

Claims (15)

  1. 一種裝置，其中在反應器殼體(1)中設有氣體入口構件(5)、在下方界定製程室(8)的基板座、對該基板座(2)進行加熱的加熱裝置(6)、以及在上方界定該製程室(8)的製程室頂部(7)，其中，該基板座(2)形成用於容置待塗佈之基板(4)的基板支承區(S)，以及在基板座(2)之位於該氣體入口構件(5)與該基板支承區(S)之間的區域內設有前置區板(10)，使得在基板座(2)之頂側(2')與該前置區板(10)之底側(10')之間留有自由空間(12、13)，在該自由空間中設有附加板(11)，其特徵在於：該附加板(11)與該前置區板(10)係全等地交疊。
  2. 一種在裝置中沉積Ⅲ-Ⅴ族層的方法，其中，在反應器殼體(1)中設有氣體入口構件(5)、在下方界定製程室(8)的基板座、對該基板座(2)進行加熱的加熱裝置(6)、以及在上方界定該製程室(8)的製程室頂部(7)，其中，該基板座(2)形成用於容置待塗佈之基板(4)的基板支承區(S)，以及在基板座(2)之位於該氣體入口構件(5)與該基板支承區(S)之間的區域內設有前置區板(10)，使得在基板座(2)之頂側(2')與該前置區板(10)之底側(10')之間留有自由空間(12、13)， 具有下列步驟： 藉由該加熱裝置(6)對該基板座(2)進行加熱，並在該製程室(8)中產生豎向溫度梯度，使得製程室或製程室頂部(7)之溫度小於基板座(2)，該基板支承區(S)具有介於500℃與800℃之間的溫度(Ts)，且該前置區(V)具有更低的溫度(Tv)； 透過該氣體入口構件(5)將製程氣體饋送入該前置區(V)，其中，該製程氣體包含至少一個含有第Ⅲ主族之元素的第一反應氣體、至少一個含有第Ⅴ主族之元素的第二反應氣體、以及載氣； 其特徵在於：該自由空間(12、13)之豎向高度係選擇以使前置區(V)之溫度比基板支承區(S)之溫度低10至40℃或20℃至40℃。
  3. 如請求項1之裝置，其中，該附加板(11)具有與該前置區板(10)一致的基本輪廓，以及/或者，前置區板(10)具備導電性及/或由石墨構成，以及/或者，附加板(11)之導熱性低於前置區板(10)。
  4. 如請求項1之裝置，其中，該附加板(11)係電絕緣以及/或者由石英及/或陶瓷材料構成。
  5. 如請求項1之裝置，其中，該前置區板(10)與該附加板(11)分別具有一中央開口(15、17)，該氣體入口構件(5)插在該中央開口中。
  6. 如請求項1之裝置，其中，該前置區板(10)與該附加板(11)分別為一體式組件。
  7. 如請求項1之裝置，其中，具有第一間隔元件(14)以及第二間隔元件(18)，透過該等第一間隔元件以與該基板座(2)之頂側(2')間隔預定之第一距離(d)的方式保持該前置區板(10)，透過該等第二間隔元件以與該基板座(2)之頂側間隔預定之第二距離(c)的方式保持該附加板(11)，其中，附加板(11)具有開口(16)，該等第一間隔元件(14)穿過該等開口。
  8. 如請求項1之裝置，其中，該前置區板(10)與該附加板(11)分別為具有平整的寬側面的扁平件，以及前置區板(10)與附加板(11)以相互平行並且平行於基板座(2)之平整頂側(2')的方式延伸。
  9. 如請求項1之裝置，其中，該附加板(11)與該基板座(2)之在水平平面中延伸之頂側(2')的豎向距離為0.8 mm +/-10%，以及該前置區板(10)與該附加板(11)之豎向距離為0.8 mm +/-10%。
  10. 如請求項1之裝置，其中，該前置區板(10)之頂側與該基板座(2)之頂側的豎向距離為9.6 mm +/-10%。
  11. 如請求項1之裝置，其中，該附加板(11)之材料厚度為3.2 mm +/-10 %。
  12. 如請求項2之方法，其中，該前置區(V)之溫度(Tv)與該基板(4)之溫度(Ts)之間的溫差大於25℃。
  13. 如請求項2之方法，其中，不將調溫氣體饋送入該自由空間(12、13)。
  14. 如請求項2之方法，其中，分別對設於該基板支承區(S)中之數個基板(4)的基板溫度進行個別調節，以及/或者，透過改變能量流或透過承載基板架(3)之氣墊的高度或組成來改變每個基板(4)之基板溫度。
  15. 如請求項2之方法，其中，該第Ⅴ主族之元素為砷或磷。
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