EP1858071A1 - Verfahren zur Herstellung eines Halbleitermaterial-auf-Isolator Wafer und Halbleitermaterial-auf-Isolator Wafer - Google Patents

Verfahren zur Herstellung eines Halbleitermaterial-auf-Isolator Wafer und Halbleitermaterial-auf-Isolator Wafer Download PDF

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Publication number
EP1858071A1
EP1858071A1 EP06290815A EP06290815A EP1858071A1 EP 1858071 A1 EP1858071 A1 EP 1858071A1 EP 06290815 A EP06290815 A EP 06290815A EP 06290815 A EP06290815 A EP 06290815A EP 1858071 A1 EP1858071 A1 EP 1858071A1
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EP
European Patent Office
Prior art keywords
layer
diffusion barrier
semiconductor
barrier layer
insulator
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06290815A
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English (en)
French (fr)
Inventor
Takeshi Akatsu
Thomas Signmarcheix
Hubert Moriceau
Chrystel Deguet
Loic Sanchez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
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Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP06290815A priority Critical patent/EP1858071A1/de
Priority to US11/746,297 priority patent/US7776716B2/en
Priority to JP2007127190A priority patent/JP5088729B2/ja
Publication of EP1858071A1 publication Critical patent/EP1858071A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Definitions

  • the invention relates to a method for fabricating a semiconductor on insulator type wafer which comprises the steps of providing a semiconductor substrate or a substrate comprising an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle compound and detaching a main part of the source substrate at a predetermined splitting area, provided inside the source substate and being essentially parallel to the main surface, from the source handle compound to thereby create the semiconductor on insulator type wafer.
  • the invention also relates to a corresponding semiconductor on insulator wafer.
  • the interface state density between the semiconductor and the underlying insulator layer often is not good enough to achieve satisfying electric characteristics.
  • the semiconductor layer and/or the the interface with the oxide deteriorate due to oxidation.
  • Si 3 N 4 , Ge 3 N 4 or Ge x O y N z layers it has been proposed to modify the insulating layer by using Si 3 N 4 , Ge 3 N 4 or Ge x O y N z layers.
  • SEOl semiconductor on insulator wafer
  • a diffusion barrier layer in particular an oxygen diffusion barrier layer, on one main surface of the source substrate, a deterioration of the semiconductor/insulator interface can be advantageously prevented, particularly the deterioration of the electrical quality of the interface. Thereby the object of improving the electrical characteristics of the SEOI wafer is achieved.
  • the diffusion barrier layer can be a metal nitride layer, in particular, an aluminum nitride AIN x layer.
  • this type of layer can be deposited on all kinds of different layers.
  • step b) of the inventive method can further comprise providing a dielectric layer or the deposition of a layer which could be transformed into a dielectric layer, in particular an oxide layer, a silicon dioxide layer, a high kk dielectric layer, like a HfO 2 or ZrO 2 layer, a silicon nitride layer, a carbon layer, an alumina layer or a diamond layer on the diffusion barrier layer.
  • the advantageous method can be combined with all sorts of different insulating layers and is not limited to one particular insulating material.
  • the invention provides a high flexibility concerning the choice of the materials to be used in the SEOI wafer.
  • a modified diffusion barrier layer could be obtained by modifying the chemical composition, preferably by reaction with at least oxygen and/or nitrogen of at least a part of the diffusion barrier layer. It is even possible to modify the entire diffusion barrier layer. Due to the formation of the modified layer, the negative impact of diffusion can be further reduced so that the interface properties can be improved and in turn also the electric and morphological characteristics of the SEOI wafer are improved.
  • the modified diffusion barrier layer can be obtained by a thermal treatment.
  • the necessary thermal treatment step can be either a dedicated thermal treatment step to modify the diffusion barrier layer or the modified layer can be a result of a thermal treatment step which is part of the subsequent fabrication process, e.g. a thermal treatment step to achieve the detachment of the SEOI wafer from the remainder of the source substrate.
  • the thermal treatments have the advantage that they are easy to control so that they can be adapted to the material used.
  • the modified diffusion barrier layer can be obtained by a thermal treatment after providing the dielectric layer or the layer to be transformed into the dielectric layer.
  • the thermal treatment is at least one of a rapid thermal treatment, a thermal treatment under vacuum, a thermal treatment under controlled atmosphere, in particular, an oxidizing atmosphere, a treatment under an oxygen and /or nitrogen plasma, and an ozone treatment, under UV or not.
  • the thermal treatment is realized in an atmosphere containing at least oxygen and/or nitrogen.
  • the best suited thermal treatment can be applied to further improve the interface properties.
  • the modified diffusion barrier layer is an aluminum oxinitride (AlO x N y ) layer or a silicon aluminum oxinitride layer (Si x Al y N z O t ) or a Ge x Al y O z N t layer after reaction with diffusing Ge or with GeO 2 layer. It is the formation of this mixed layer which allows the improvement of the interface properties. Furthermore, it has been found out that for this specific type of material, a modified layer could be obtained over the entire thickness of the diffusion barrier layer.
  • the diffusion barrier layer can be provided by a surface treatment like plasma, UV or ozone treatment.
  • a second diffusion barrier layer can be provided on the modified diffusion barrier layer. Thereby the negative impact of the insulating layer on the semiconductor layer can be further reduced.
  • a third diffusion barrier layer can be provided on the surface of the handle substrate which is going to be attached to the source substrate, In this case, the diffusion barrier layer itself can also play the role of the insulating layer.
  • the first, and/or second and/or third diffusion barrier layer is/are provided with at least one mono layer to 2 ⁇ m, in particular 2 nm up to 20 nm, and more particularly, with a thickness of 3 nm and/or when the dielectric layer can be provided with a thickness of 200 nm to 500 nm, in particular with a thickness of 300 nm.
  • the desired improvement of the electric characteristics can be achieved, and this even for dielectric layers which are several orders of magnitude thicker than the diffusion barrier layer.
  • the first and second and/or third delimiting layer can be of the same material-
  • the fabrication process is simplified and in all the different cases, the creation of defects at the interfaces can be limited.
  • the method can further comprise the step of creating the predetermined splitting area inside the source substrate, preferably by implanting or co-implanting atomic species prior to step c), in particular, prior to step b).
  • a well defined predetermined splitting area can be achieved which subsequently allows the re-use of the remainder of the source substrate.
  • the implantation step is either carried out before or after providing the diffusion barrier layer.
  • the method can further comprises, prior to step b), the step of cleaning the main surface, in particular, by using fluoric acid, buffered acid, cyclic fluoric acid, water and/or ozone and/or brushing.
  • the step of cleaning the main surface in particular, by using fluoric acid, buffered acid, cyclic fluoric acid, water and/or ozone and/or brushing.
  • the semiconductor of the source substrate can be one of germanium, silicon, gallium nitride, indium phosphide, or gallium arsenide and/or the material of the handle substrate can be one of germanium, silicon, thermally grown silicon dioxide on silicon, silicon carbide, gallium arsenide, gallium nitride,quartz or sapphire.
  • the invention is particularly advantageous for semiconductor on insulator wafers of the type germanium on insulator, as the germanium oxide is instable and that, furthermore, germanium / silicon dioxide interfaces present bad interface state densities leading to bad electrical characteristics.
  • the invention also relates to a semiconductor on insulator wafer according to claim 16.
  • Advantageous embodiments of the semiconductor on insulator wafer are according to the dependent claims. The advantages achieved with the semiconductor on insulator wafer according to the invention and its advantageous embodiments have already been discussed in detail above in the description of the inventive method. Their description is thus not repeated again but is incorporated herewith by reference.
  • the invention is applicable not only for the transfer of the entire surface of a source substrate but also for a partial transfer in case of patterned surfaces.
  • a method for fabricating a semiconductor on insulator type wafer according to the invention will be described using the Smart Cut TM technology.
  • other semiconductor on insulator manufacturing methods are also suitable and could be adapted to the invention.
  • the invention will be described for a germanium type wafer as semiconductor on insulator type wafer.
  • the invention is also applicable to other types of semiconductors, in particular, pure germanium or germanium compounds doped or not, with Si from 0% to 100%gallium nitride, indium phosphide or gallium arsenide.
  • Fig. 1a illustrates a germanium (Ge) substrate 1, or, as a variant, a substrate with an epitaxial germanium layer provided on one of its main surfaces.
  • the surface 3 of the source substrate 1 may be cleaned for instance using cyclic fluoric acid (CHF), fluoric acid (HF), water and/or ozone with or without a brushing step, prior to further processing.
  • CHF cyclic fluoric acid
  • HF fluoric acid
  • Fig. 1b illustrates a handle substrate 5 which can be, for example, a germanium wafer, a silicon wafer, a silicon wafer with a thermally formed silicon dioxide layer, a silicon carbide wafer, a wafer presenting a silicon germanium front surface or a gallium arsenide wafer.
  • a quartz type wafer or sapphire could be used.
  • Both the source substrate 1 as well as the handle substrate 5 may have any suitable size or form such as, for example, 200 mm or 300 mm type wafers.
  • the handle substrate 5 is illustrated with a thermally formed insulating layer 7 around the base material 9 of the handle substrate 5.
  • the dielectric layer 7, can, in particular, be an oxide layer, like for example, a silicon dioxide layer, in case a silicon handle substrate is used, a high k dielectric layer, a silicon nitride layer, a carbon layer, an alumina layer or a diamond layer.
  • Fig. 1c) illustrates step b) of the inventive method for fabricating a semiconductor on insulator wafer which consists in providing a diffusion barrier layer, in particular, an oxygen diffusion barrier layer, on surface 3 of the source substrate 1.
  • the diffusion barrier layer is an aluminum nitride AlN x layer 11.
  • other metal nitride layers are also suitable and according to the invention.
  • the AIN x layer is deposited with a thickness of 3 nm. However, thicknesses of 1 mono layer up to 2 ⁇ m, in particular 2 nm to up to 20 nm are also suitable.
  • the layer can be deposited using standard deposition techniques, like physical vapour deposition (PVD) or atomic layer deposition (ALD) in particular, molecular beam epitaxy (MBE).
  • PVD physical vapour deposition
  • ALD atomic layer deposition
  • MBE molecular beam epitaxy
  • the AIN x layer 11 is then subjected to one or several additional treatments, like, for example, a treatment under an oxygen plasma and/or nitrogen plasma, a UV ozone treatment or a thermal treatment under oxygen to form a modified layer 13 of the type Al x O y N z (see Fig. 1 d).
  • the sources have to contain at least oxygen and nitrogen.
  • the thermal treatment can be a rapid thermal treatment.
  • only part of the AlN x layer 11 is modified by such treatment to form a modified layer 13.
  • a predetermined splitting area 15, being essentially parallel to the main surface 3, which is provided with the AlN x layer 11 is created inside the source substrate 1.
  • this is achieved by implanting atomic species 17, for example, hydrogen ions, with a predetermined energy and dose into the source substrate 1.
  • Co-impiantation using different species like helium for example represents an alternative.
  • the implantation usually occurs through the previously provided AlN x layer 11 and the modified layer 13.
  • the implantation step could be carried out prior to providing the AIN x layer 11, or prior to carrying out the heat treatment to obtain the modified layer 13.
  • the handle substrate 5 and the source substrate 1 with the AIN x layer 11 and the modified layer 13 on top are bonded together to create the source handle compound 19.
  • Bonding occurs between the main surfaces 21 of the oxide layer 7 on the handle substrate 5 and the surface 23 of the modified layer 13.
  • the surface qualities of both layers fulfill the bonding criteria with respect to surface roughness, nano topology, side flatness, particle density and wafer deformation (bow and warp)
  • bonding between the two substrates can be achieved even without previously polishing the surface 23 of the modified layer 13.
  • the temperature of the thermal treatment step shall be chosen such that the bonding step, illustrated in Fig. 1f), can be carried out.
  • Fig. 1g illustrates the result of the detachment step, which in the SmartCut TM technology consists for instance of a thermal annealing of the source handle compound 19.
  • the predetermined splitting area 15 is weakened until complete detachment between the remainder of the source substrate 25 and the germanium on insulator wafer 27, being composed of the handle substrate 5, the modified layer 13, the AlN x layer 11 and a transferred germanium layer 29 which have been transferred from the original source substrate 1 onto the handle substrate 5, occurs.
  • the remainder of the original source substrate 25 is removed and can be re-utilized as source substrate 1 in a subsequent germanium on insulator manufacturing process, after reclaiming it like during the SOI Smart Cut TM process.
  • the detachment step can be achieved applying mechanical constraints or the combination of thermal and mechanical contstraints.
  • the transferred germanium layer 29 is not transferred over the entire area of the surface of the handle substrate, but only partial.
  • the surface of the transferred layer is subjected to a polishing step e.g. a CMP step.
  • a polishing step e.g. a CMP step.
  • a thermal treatment under oxygen can be carried out, to reduce the thickness of the germanium layer 29.
  • the above described inventive process it is therefore possible to provide a germanium on insulator wafer 27 which has a superior quality with respect to its electrical characteristics due to the fact that by providing the AlN x layer 11 and the modified layer 13, the interface properties between the semiconductor layer, e.g. the germanium layer 29 and the dielectric layers 7, 11, 13 are improved.
  • This interface stabilization is attributed to the nitrogen atoms in the AiN x layer and the modified layer which form an oxygen diffusion barrier, thereby preventing the oxidation of the germanium layer 29.
  • Figure 2 illustrates a second embodiment of the inventive method for fabricating a semiconductor on insulator type wafer.
  • the steps illustrated by figures 2a) and 2b) replace the step illustrated in figure 1d) of the first embodiment.
  • the other steps described with respect to the first embodiment are the same or at least similar in the second embodiment. Their description will thus not be repeated again, but is incorporated herewith by reference.
  • the method according to the second embodiment continues with a deposition step during which a silicon dioxide layer 41 with a thickness of 200 to 500 nm, preferably 300 nm, is deposited onto the AlN x layer 11.
  • a silicon dioxide layer 41 with a thickness of 200 to 500 nm, preferably 300 nm, is deposited onto the AlN x layer 11.
  • This can, for example, be realized using plasma enhanced chemical vapour deposition (PECVD).
  • a silicon dioxide layer instead of a silicon dioxide layer, also other suitable dielectric layers, e.g. other types of oxides, a high k dielectric layer, like a HfO 2 or ZrO 2 layer, a silicon nitride layer, a carbon layer, an alumina layer or a diamond layer could also be deposited on the AlN x layer 11.
  • a thermal treatment is carried out to create a modified layer of the type Si x Al y O z N t at the interface between the silicon dioxide layer 41 and the AlN x layer 11.
  • This thermal treatment is typically carried out at 300°C to 600°C for about 1 to 150 minutes.
  • a further densification step at about 600°C for about 30 to 60 minutes depending on the deposition technique used is carried out.
  • the method then continues with the step illustrated in Fig. 1e, namely, the implantation of ions to create the predetermined splitting area 15.
  • the implantation step could also be carried out prior to the deposition of the AIN x layer 11, prior to the deposition of the SiO 2 layer 41 or just prior to the creation of the modified layer 43.
  • Figure 3 illustrates a part of a third inventive embodiment of the method for fabricating a semiconductor on insulator wafer.
  • the first steps correspond to the ones of the first embodiment, namely, the steps corresponding to figures 1a) to 1d). The description of these steps is not repeated again in detail but is incorporated herewith by reference.
  • a dielectric layer in this embodiment, a silicon dioxide layer 51 is deposited in the same way as described in the second embodiment (Fig. 2A).
  • the ion implantation can also be carried out prior to the deposition of the silicon dioxide layer 51.
  • a silicon dioxide layer like in the second embodiment, also other types of dielectric layers, in particular, another oxide layer, a high k dielectric layer, a silicon nitride layer, a carbon layer, or a diamond layer could also be provided on the modified layer 13.
  • the deposition of the AIN x layer could be continued using the same deposition technique as for the first AlN x layer 11, thereby creating a second AiN x layer 51'.
  • Another possibility consists in, right from the beginning, depositing a thick AIN x layer, thus in one growth step, and to create the modified layer during a thermal treatment in the subsequent process steps e.g. during the detachment step,
  • Figures 4a) and 4b) illustrate a part of the steps of a fourth embodiment of the inventive method for fabricating a semiconductor on insulator wafer.
  • the difference in the fourth embodiment is that instead of using a handle substrate 5 as shown in Fig. 1b) or using a handle substrate 5 without dielectric layer 7, a handle substrate 61 is used on which a third AlN x layer 63 is deposited using one of the deposition methods as described for the first AlN x layer 11 deposition illustrated in Fig. 1c). The description of this deposition is not repeated again, but incorporated herewith by reference.
  • the bonding step illustrated in Fig. 1f) is slightly different.
  • bonding has to occur between the third AlN x layer 63 and either the modified layer 13, the silicon dioxide layer 41, or 51 or the second AlN x layer 51'.
  • a dedicated thermal treatment step As, due to the presence of water molecules on the surface, oxygen is present at the interface between the two layers.
  • the transformation of the AlN x layers into a modified layer 13 then can occur during a thermal treatment which is carried out in one of the subsequent steps, in particular, the detachment step illustrated in figure 1g).
  • FIGs 5a) to 5c) illustrate the germanium on insulator wafers 71, 81 and 91 which can be achieved by the methods according to the second, third or fourth, embodiment.
  • the germanium on insulator wafer 71 illustrated in Figure 5a) comprises the handle substrate 5 with the dielectric layer 7, the dielectric layer, e.g. the SiO 2 layer 51 or the second/third AlN x layer 51', 63, the modified layer 13, the first AlN x layer 11 and finally the germanium layer 29 transferred from the original source substrate 1.
  • the first Al x N layer 11 could be transformed totally into the modified layer 13.
  • the final substrate does not comprises the layer 11 anymore.
  • just parts of the surface of the first layer 11 are transformed into the modified layer 13 leading to a structure 81 as shown in Figure 5b).
  • the area of the modified layer 13 represents only a part of the surface area of the handle substrate 5.
  • Figure 5c illustrates an alternative inventive germanium on insulator wafer 91, wherein no dielectric layer 7 is provided on the handle substrate 5.
  • the handle substrate illustrated in Figure 1b) has been prepared such that no dielectric layer, like the natural oxide, is present thereon.
  • the structure of germanium on insulator wafer 91 correspond to the one of the embodiment shown in figure 5a).
  • the wafer 91 could of course also have a modified layer 13, like illustrated in Fig. 5b).
  • the handle substrate 5 can be one of germanium, silicon, thermally grown silicone dioxide, silicon carbide, gallium arsenide, gallium nitride, sapphire or quartz.
  • a silicon dioxide dielectric layer 51 a high k dielectric layer, silicon nitride layer, or diamond layer can also be used.
  • germanium 29 instead of germanium 29, also pure germanium or germanium compounds doped or not, with Si from 0% to 100%, a gallium nitride, an indium phosphide or a gallium arsenide semiconductor layer could be used.
  • All embodiments have in common that the improved electrical and morphological characteristics are achieved due to the presence of the AIN x layer 11 and advantageously the modified layer 13 wherein the nitrogen atoms play the role of inhibitors for the oxygen diffusion so that the interface properties and, as a consequence, the electric characteristics, can be improved.
  • AIN x is used as the buried oxide (BOX) in the germanium on insulator wafer or the other types of semiconductor on insulator wafers according to the invention.
  • the modified layer reacts with the adjacent layers and forms further types of anti-diffusion barriers.

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EP06290815A 2006-05-18 2006-05-18 Verfahren zur Herstellung eines Halbleitermaterial-auf-Isolator Wafer und Halbleitermaterial-auf-Isolator Wafer Withdrawn EP1858071A1 (de)

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Application Number Priority Date Filing Date Title
EP06290815A EP1858071A1 (de) 2006-05-18 2006-05-18 Verfahren zur Herstellung eines Halbleitermaterial-auf-Isolator Wafer und Halbleitermaterial-auf-Isolator Wafer
US11/746,297 US7776716B2 (en) 2006-05-18 2007-05-09 Method for fabricating a semiconductor on insulator wafer
JP2007127190A JP5088729B2 (ja) 2006-05-18 2007-05-11 半導体オンインシュレータ型ウエハを製造する方法

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EP06290815A EP1858071A1 (de) 2006-05-18 2006-05-18 Verfahren zur Herstellung eines Halbleitermaterial-auf-Isolator Wafer und Halbleitermaterial-auf-Isolator Wafer

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FR2923079A1 (fr) * 2007-10-26 2009-05-01 Soitec Silicon On Insulator Substrats soi avec couche fine isolante enterree
FR2993703A1 (fr) * 2012-07-23 2014-01-24 Soitec Silicon On Insulator Procede de transfert d'une couche de semi-conducteur
EP2822026A4 (de) * 2012-02-29 2015-09-30 Kyocera Corp Verbundsubstrat
FR3027451A1 (fr) * 2014-10-21 2016-04-22 Soitec Silicon On Insulator Substrat et procede de fabrication d'un substrat

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GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
EP2728608A4 (de) * 2011-06-30 2014-11-19 Kyocera Corp Verbundsubstrat und verfahren zu seiner herstellung
US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
CN103872184B (zh) * 2014-04-03 2016-04-13 苏州阿特斯阳光电力科技有限公司 一种抗pid晶体硅太阳能电池制作方法
US10312134B2 (en) * 2014-09-04 2019-06-04 Globalwafers Co., Ltd. High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
EP3378094B1 (de) * 2015-11-20 2021-09-15 Globalwafers Co., Ltd. Herstellungsverfahren zum glätten einer halbleiteroberfläche
TWI732925B (zh) * 2016-08-23 2021-07-11 美商克若密斯股份有限公司 與工程基板整合之電力元件

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
FR2923079A1 (fr) * 2007-10-26 2009-05-01 Soitec Silicon On Insulator Substrats soi avec couche fine isolante enterree
US7892951B2 (en) 2007-10-26 2011-02-22 S.O.I.Tec Silicon On Insulator Technologies SOI substrates with a fine buried insulating layer
EP2822026A4 (de) * 2012-02-29 2015-09-30 Kyocera Corp Verbundsubstrat
US9496279B2 (en) 2012-02-29 2016-11-15 Kyocera Corporation Composite substrate
FR2993703A1 (fr) * 2012-07-23 2014-01-24 Soitec Silicon On Insulator Procede de transfert d'une couche de semi-conducteur
FR3027451A1 (fr) * 2014-10-21 2016-04-22 Soitec Silicon On Insulator Substrat et procede de fabrication d'un substrat
WO2016062674A1 (en) * 2014-10-21 2016-04-28 Soitec Substrate and method for producing a substrate

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