EP1689907A4 - METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR - Google Patents

METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR

Info

Publication number
EP1689907A4
EP1689907A4 EP04755834A EP04755834A EP1689907A4 EP 1689907 A4 EP1689907 A4 EP 1689907A4 EP 04755834 A EP04755834 A EP 04755834A EP 04755834 A EP04755834 A EP 04755834A EP 1689907 A4 EP1689907 A4 EP 1689907A4
Authority
EP
European Patent Office
Prior art keywords
driver circuit
duty cycle
production device
plasma production
adjustable duty
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP04755834A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1689907A2 (en
Inventor
Patrick Pribyl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plasma Control Systems LLC
Original Assignee
Plasma Control Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasma Control Systems LLC filed Critical Plasma Control Systems LLC
Publication of EP1689907A2 publication Critical patent/EP1689907A2/en
Publication of EP1689907A4 publication Critical patent/EP1689907A4/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/26—Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B31/00—Electric arc lamps
    • H05B31/02—Details
    • H05B31/26—Influencing the shape of arc discharge by gas blowing devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
EP04755834A 2003-06-19 2004-06-21 METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR Ceased EP1689907A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48033803P 2003-06-19 2003-06-19
PCT/US2004/019931 WO2004114461A2 (en) 2003-06-19 2004-06-21 Plasma production device and method and rf driver circuit with adjustable duty cycle

Publications (2)

Publication Number Publication Date
EP1689907A2 EP1689907A2 (en) 2006-08-16
EP1689907A4 true EP1689907A4 (en) 2008-07-23

Family

ID=33539287

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04755834A Ceased EP1689907A4 (en) 2003-06-19 2004-06-21 METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR

Country Status (6)

Country Link
EP (1) EP1689907A4 (ja)
JP (1) JP2007524963A (ja)
KR (1) KR20060029621A (ja)
CN (1) CN1871373A (ja)
CA (1) CA2529794A1 (ja)
WO (1) WO2004114461A2 (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4773165B2 (ja) * 2005-08-31 2011-09-14 株式会社ダイヘン 高周波電源装置
CN100411496C (zh) * 2005-09-21 2008-08-13 大连理工大学 一种实现脉冲电源与等离子体负载间匹配的方法
JP5241578B2 (ja) * 2009-03-19 2013-07-17 株式会社日清製粉グループ本社 誘導熱プラズマ発生方法及び装置
JP5757710B2 (ja) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9313872B2 (en) 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
KR101757922B1 (ko) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5957816B2 (ja) * 2011-02-23 2016-07-27 株式会社村田製作所 インピーダンス変換デバイス、アンテナ装置および通信端末装置
CN103456591B (zh) * 2012-05-31 2016-04-06 中微半导体设备(上海)有限公司 自动频率调谐源和偏置射频电源的电感耦合等离子处理室
JP6267989B2 (ja) * 2013-02-18 2018-01-24 東京エレクトロン株式会社 プラズマ処理方法及び容量結合型プラズマ処理装置
CN103311648B (zh) * 2013-06-18 2015-04-29 浙江大学 一种超宽带等离子发射天线装置
JP2016046391A (ja) * 2014-08-22 2016-04-04 株式会社アルバック プラズマエッチング装置
CN107710869B (zh) * 2015-07-03 2021-08-31 东洋制罐集团控股株式会社 高频感应加热装置
CN105228330B (zh) * 2015-09-01 2018-09-14 沈阳拓荆科技有限公司 一种射频等离子体设备匹配器
US10211522B2 (en) 2016-07-26 2019-02-19 Smartsky Networks LLC Density and power controlled plasma antenna
US10734195B2 (en) * 2017-06-08 2020-08-04 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching
US20190108976A1 (en) * 2017-10-11 2019-04-11 Advanced Energy Industries, Inc. Matched source impedance driving system and method of operating the same
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
TW202329762A (zh) 2017-11-17 2023-07-16 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
US10672590B2 (en) * 2018-03-14 2020-06-02 Lam Research Corporation Frequency tuning for a matchless plasma source
WO2021257374A1 (en) * 2020-06-17 2021-12-23 Lam Research Corporation Protection system for switches in direct drive circuits of substrate processing systems
WO2022173626A1 (en) * 2021-02-09 2022-08-18 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654679A (en) * 1996-06-13 1997-08-05 Rf Power Products, Inc. Apparatus for matching a variable load impedance with an RF power generator impedance
US5747935A (en) * 1992-04-16 1998-05-05 Advanced Energy Industries, Inc. Method and apparatus for stabilizing switch-mode powered RF plasma processing
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
WO2003032434A1 (en) * 2001-10-09 2003-04-17 Plasma Devices And Instrumentation, Llc Plasma production device and method and rf driver circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0773105B2 (ja) * 1987-02-16 1995-08-02 日電アネルバ株式会社 プラズマ処理装置
JP3283476B2 (ja) * 1989-09-22 2002-05-20 株式会社日立製作所 放電状態変動量モニタ
US5473291A (en) * 1994-11-16 1995-12-05 Brounley Associates, Inc. Solid state plasma chamber tuner
JP2884056B2 (ja) * 1995-12-07 1999-04-19 パール工業株式会社 放電プラズマ発生用高周波電源装置及び半導体製造装置
JP2001073149A (ja) * 1999-09-01 2001-03-21 Shimadzu Corp Ｅｃｒ成膜装置
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP4711543B2 (ja) * 2001-05-22 2011-06-29 キヤノンアネルバ株式会社 放電を利用した処理装置における放電検出の方法と装置
JP3574104B2 (ja) * 2001-11-27 2004-10-06 三容真空工業株式会社 プラズマ発生のためのマッチング回路を利用したプラズマ発生駆動装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747935A (en) * 1992-04-16 1998-05-05 Advanced Energy Industries, Inc. Method and apparatus for stabilizing switch-mode powered RF plasma processing
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5654679A (en) * 1996-06-13 1997-08-05 Rf Power Products, Inc. Apparatus for matching a variable load impedance with an RF power generator impedance
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
WO2003032434A1 (en) * 2001-10-09 2003-04-17 Plasma Devices And Instrumentation, Llc Plasma production device and method and rf driver circuit

Also Published As

Publication number Publication date
KR20060029621A (ko) 2006-04-06
WO2004114461A2 (en) 2004-12-29
CA2529794A1 (en) 2004-12-29
JP2007524963A (ja) 2007-08-30
EP1689907A2 (en) 2006-08-16
CN1871373A (zh) 2006-11-29
WO2004114461A3 (en) 2006-07-06

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