EP1687831B1 - Functional paste - Google Patents
Functional paste Download PDFInfo
- Publication number
- EP1687831B1 EP1687831B1 EP04790738A EP04790738A EP1687831B1 EP 1687831 B1 EP1687831 B1 EP 1687831B1 EP 04790738 A EP04790738 A EP 04790738A EP 04790738 A EP04790738 A EP 04790738A EP 1687831 B1 EP1687831 B1 EP 1687831B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- functional paste
- powder
- weight
- etching agent
- functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
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- 239000000843 powder Substances 0.000 claims abstract description 50
- 238000005530 etching Methods 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 239000011230 binding agent Substances 0.000 claims abstract description 17
- 239000003960 organic solvent Substances 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 16
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 42
- 239000000203 mixture Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- 235000011187 glycerol Nutrition 0.000 claims description 14
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical group CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000003085 diluting agent Substances 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 150000005846 sugar alcohols Polymers 0.000 claims description 5
- 229910017665 NH4HF2 Inorganic materials 0.000 claims description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 9
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 9
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 9
- 239000005642 Oleic acid Substances 0.000 description 9
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 9
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 9
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XMTQQYYKAHVGBJ-UHFFFAOYSA-N 3-(3,4-DICHLOROPHENYL)-1,1-DIMETHYLUREA Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XMTQQYYKAHVGBJ-UHFFFAOYSA-N 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 2
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007970 homogeneous dispersion Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to functional paste having an etching function and conductivity.
- an antireflection layer formed on a semiconductor layer is patterned using photoresist, then a surface electrode is fabricated (patent reference 1).
- this method is very complicated because it requires two steps: patterning of an antireflection layer, and fabrication of an electrode.
- a method was proposed, wherein an antireflection layer is formed only on an light absorption side by masking the semiconductor layer during the formation of the antireflection layer which is the process prior to the patterning process.
- this method of direct patterning of antireflection layers has technological difficulties, and is not yet sufficient for practical application in this case, although the application of printable pastes is also known.
- WO/003381 A printable compositions and processes are disclosed for applying them to temperature-sensitive substrates and curing them to traces of high electrical conductivity at temperatures which the substrate can withstand, the essential constituents of these compositions are a metal powder mixture of specified characteristics and a Reactive Organic Medium (ROM) in which the consolidation of the metal powder mixture to a solid conductor takes place. All these paste compositions are not applicable for this special purpose.
- Patent reference 1 Patent Application JP 2000-49368 A
- Patent reference 2 Patent Application JP 2002-176186 A
- the invention was performed under the above circumstances, and it provides functional paste which has etching activity and good electrical properties.
- Inventors of the invention made extensive examinations to resolve the above issues, and found that during the fabrication process of paste by mixing a metal powder, a binder and an organic solvent, the mixture of an etching agent into the paste enables stable etching of an antireflection layer at a low temperature of approximately 200°C in the fabrication of a surface electrode of a solar cell.
- the invention was achieved based on this finding.
- the invention relates to functional paste comprising a metal powder, an etching agent, a binder and an organic solvent.
- the invention also relates to the functional paste which further comprises a diluent.
- the invention also relates to the functional paste wherein the diluent is butylcarbitol.
- the invention also relates to the functional paste wherein the etching agent has removal activity of oxidation layers on the surface of the metal powders.
- the invention also relates to the functional paste wherein the etching agent has etching activity for antireflection layers of solar cells.
- the invention also relates to the functional paste wherein the etching agent has removal activity of oxidation layers and/or nitride layers of Si.
- the invention also relates to the functional paste wherein the etching agent is NH 4 HF 2 or NH 4 F.
- the invention also relates to the functional paste wherein the binder contains a thermosetting resin.
- the invention also relates to the functional paste wherein the thermosetting resin is an epoxy resin and/or phenol resin.
- the invention also relates to the functional paste wherein the organic solvent is polyhydric alcohol or its mixture.
- the invention also relates to the functional paste wherein the polyhydric alcohol is glycerin and/or ethylene glycol.
- the invention relates to a solar cell comprising a semiconductor layer, an antireflection layer above the semiconductor layer, and a surface electrode which penetrates through the antireflection layer to bring the semiconductor layer into conduction, wherein the solar cell is fabricated by coating and baking the functional paste comprising a metal powder, an etching agent having etching activity for antireflection layers, a binder and an organic solvent, on the antireflection layer in a desired electrode shape.
- the invention also relates to an electric circuit formed by coating and baking the functional paste comprising a metal powder, an etching agent having removal activity of oxidation layers on the surface of the metal powders, a binder and an organic solvent, on a substrate in a desired pattern.
- the invention relates to a method of fabricating a solar cell comprising a semiconductor layer, an antireflection layer above the semiconductor layer, and a surface electrode which penetrates through the antireflection layer to bring the semiconductor layer into conduction, wherein the method comprises coating and baking the functional paste comprising a metal powder, an etching agent having etching activity for antireflection layers, a binder and an organic solvent, on the antireflection layer in a desired electrode shape.
- the invention also relates to a method of forming electric circuits, which comprises coating and baking the functional paste comprising a metal powder, an etching agent having removal activity of oxidation layers on the surface of the metal powders, a binder and an organic solvent, on a substrate in a desired pattern.
- an etching agent contained in the paste enables stable removal of an antireflection layer under a low temperature without penetrating the n-layer for the fabrication of electrodes of solar cells, thus achieving easy, single-step fabrication of surface electrodes with a low interface resistance.
- the invention also enables stable and single-step fabrication of surface electrodes at a low temperature of approximately 200°C, thus significantly simplifying the fabrication process. Therefore, by the simple replacement of conventional materials with the functional paste of the invention, the cost and yield can be markedly improved, which provides significant contribution to the art. Furthermore, because a thin natural oxidation layer is formed on the surface of metal powders of paste due to water or oxygen, sometimes stable electric conduction may not be obtained. However, with the functional paste according to this invention, the etching agent also removes such oxidation layers, and thus, the formation of an electric circuit with extremely small resistance is achieved.
- a metal powder of the functional paste of the invention a Ag-coated Ni powder, Cu powder, Ag powder, Ni powder and Al power are used. Among them, a Ag-coated Ni powder, Cu powder and Ag powder are preferred from the viewpoint of soldering characteristics.
- the contents of the metal powder relative to the total weight of the functional paste are, preferably 60-99 wt.%, and more preferably 65-90 wt.%.
- etching agent of the functional paste of the invention bifluoride such as NH 4 HF 2 and NH 4 F is used; among them, NH 4 HF 2 is preferred from the viewpoint of reactivity.
- the contents of the etching agent relative to the total weight of the functional paste are, preferably 0.1-20 wt.%, and more preferably 1-10 wt.%.
- thermosetting resin contained in the binder of the functional paste of the invention an epoxy resin, phenol resin, polyimide resin and polycarbonate resin are used. Among them, an epoxy resin and phenol resin are preferred from the viewpoint of coating characteristics.
- the contents of the thermosetting resin relative to the total weight of the functional paste are, preferably 0.1-30 wt.%, and more preferably 1-10 wt.%. relative to the total weight of the functional paste are, preferably 0.1-30 wt. %, and more preferably 1-10 wt.%.
- a hardener such as dicyandiamide and fatty polyamine is added; among them, dicyandiamide is preferred.
- the contents of the harderner relative to the total weight of the functional paste are, preferably 0.1-30 wt.%, and more preferably 1-20 wt.%.
- a hardening accelerator such as 3-(3,4-dichlorophenyl)-1,1-dimethylurea and tertiary amine is further added; among them, 3-(3,4-dichlorophenyl)-1,1-dimethylurea is preferred.
- the contents of the hardening accelerator relative to the total weight of the functional paste are, preferably 0.01-10 wt.%, and more preferably 0.1-7.0 wt.%.
- any organic solvent which can homogeneously disperse the bifluoride, i.e., an inorganic salt, in the functional paste can be used, for example, polyhydric alcohol such as glycerin, ethylene glycol, glucitol and mannitol, or their mixture. Among them, glycerin and ethylene glycol are preferred from the viewpoint of reactivity.
- the contents of the organic solvent relative to the total weight of the functional paste are, preferably 0.1-30 wt.%, and more preferably 1-20 wt. %.
- a diluent such as butyl carbitol or methyl carbitol may be added to adjust the viscosity to be applicable to screen printing (approximately 200-500 poise).
- a diluent such as butyl carbitol or methyl carbitol is preferred.
- the contents of the diluent relative to the total weight of the functional paste are, preferably 0.1-10 wt.%, and more preferably 0.5-7 wt.%.
- a colloidal solution such as a silver colloidal solution AgE-102 (Nippon Paint Co., Ltd.) and DCG (Sumitomo Metal Mining Co., Ltd.) may be added to the functional paste of the invention.
- the contents of the colloidal solution in terms of Ag-converted amount relative to the total weight of the functional paste are, preferably 1.0-20 wt.%, and more preferably 1.5-15 wt.%.
- unsaturated fatty acid such as oleic acid and linoleic acid may be diluted in the functional paste of the invention.
- the contents of the unsaturated fatty acid relative to the total weight of the functional paste are, preferably 0.1-5.0 wt. %, and more preferably 0.5-3.0 wt. %.
- the functional paste of the invention with the above composition can be, after thorough mixture of the paste using, e.g., a hybrid mixer until homogeneous dispersion is achieved, painted in a desired shape using various methods including printing, spraying and brush painting. Subsequently, after drying at a temperature of 30-80°C, an electric circuit can be easily formed by baking at a temperature of 150-250°C for 5-20 min.
- n-type impurities are dispersed on a p-type silicon substrate to form an n-type region (n + layer).
- an antireflection layer SiO 2 , SiN x
- SiO 2 , SiN x is formed on the n-type region, which becomes an acceptance surface, using, e.g., a CVD device; then a p + layer, which is a region for the dispersion of high-concentration p-type impurities, is formed on the opposite surface of the acceptance surface.
- the paste is baked on the antireflection layer, so that a surface electrode which achieves good electric conduction with the n-layer silicon can be fabricated while etching the antireflection layer.
- the functional paste of the invention has both functions of the etching reaction for antireflection layers and the electric conduction; therefore, surface electrodes can be easily fabricated by a single step.
- the functional paste of the invention can be used for the fabrication of surface electrodes of solar cells and for the formation of electric circuits.
- Figure 1 shows a method for the fabrication of electrodes of solar cells.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Paints Or Removers (AREA)
- Glass Compositions (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003388424A JP4549655B2 (ja) | 2003-11-18 | 2003-11-18 | 機能性塗料 |
PCT/EP2004/011941 WO2005050673A1 (en) | 2003-11-18 | 2004-10-22 | Functional paste |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1687831A1 EP1687831A1 (en) | 2006-08-09 |
EP1687831B1 true EP1687831B1 (en) | 2007-09-26 |
Family
ID=34616193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04790738A Not-in-force EP1687831B1 (en) | 2003-11-18 | 2004-10-22 | Functional paste |
Country Status (11)
Country | Link |
---|---|
US (1) | US8257617B2 (es) |
EP (1) | EP1687831B1 (es) |
JP (1) | JP4549655B2 (es) |
KR (1) | KR101285461B1 (es) |
CN (1) | CN1883012B (es) |
AT (1) | ATE374426T1 (es) |
DE (1) | DE602004009213T2 (es) |
ES (1) | ES2294554T3 (es) |
HK (1) | HK1096196A1 (es) |
TW (1) | TWI263697B (es) |
WO (1) | WO2005050673A1 (es) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202011000518U1 (de) | 2011-03-09 | 2012-01-18 | Deutsche Cell Gmbh | Elektrisch leitfähige Kontaktstrukturen auf einer Substratoberfläche |
EP2498296A1 (de) | 2011-03-09 | 2012-09-12 | Deutsche Solar AG | Verfahren zur Erzeugung von elektrisch leitfähigen Kontaktstrukturen auf einer Substratoberfläche |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006028213A (ja) * | 2004-07-12 | 2006-02-02 | Toyama Prefecture | 機能性導電塗料並びにそれを用いた電子回路とその形成方法 |
DE102005007743A1 (de) * | 2005-01-11 | 2006-07-20 | Merck Patent Gmbh | Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten |
DE102005033724A1 (de) | 2005-07-15 | 2007-01-18 | Merck Patent Gmbh | Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten |
US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
US7888168B2 (en) * | 2007-11-19 | 2011-02-15 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
US8101231B2 (en) | 2007-12-07 | 2012-01-24 | Cabot Corporation | Processes for forming photovoltaic conductive features from multiple inks |
DE102009009840A1 (de) * | 2008-10-31 | 2010-05-27 | Bosch Solar Energy Ag | Verfahren, Vorrichtung und Drucksubstanz zur Herstellung einer metallischen Kontaktstruktur |
MY161189A (en) * | 2009-09-18 | 2017-04-14 | Merck Patent Gmbh | Ink jet printable etching inks and associated process |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
KR20110139941A (ko) * | 2010-06-24 | 2011-12-30 | 삼성전기주식회사 | 금속 잉크 조성물 및 이를 이용한 금속 배선 형성 방법, 그리고 상기 금속 잉크 조성물로 형성된 도전성 패턴 |
DE102011016335B4 (de) * | 2011-04-07 | 2013-10-02 | Universität Konstanz | Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle |
DE102011056087B4 (de) * | 2011-12-06 | 2018-08-30 | Solarworld Industries Gmbh | Solarzellen-Wafer und Verfahren zum Metallisieren einer Solarzelle |
US10158032B2 (en) | 2012-10-12 | 2018-12-18 | Heraeus Deutschland GmbH & Co. KG | Solar cells produced from high Ohmic wafers and halogen containing paste |
WO2014146306A1 (zh) * | 2013-03-22 | 2014-09-25 | 深圳首创光伏有限公司 | 太阳能电池正面电极导电浆料及其制备方法 |
WO2014117409A1 (zh) * | 2013-02-04 | 2014-08-07 | 深圳首创光伏有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
CN103545016B (zh) * | 2013-10-21 | 2016-06-29 | 深圳市首骋新材料科技有限公司 | 晶体硅太阳能电池正面电极导电浆料及其制备方法 |
JP6371099B2 (ja) * | 2014-04-18 | 2018-08-08 | ナミックス株式会社 | 導電性ペースト及び結晶系シリコン太陽電池 |
JP6425927B2 (ja) * | 2014-07-03 | 2018-11-21 | 国立研究開発法人産業技術総合研究所 | シリコン窒化膜用エッチング剤、エッチング方法 |
EP3202866B1 (en) * | 2014-09-30 | 2018-12-05 | Tatsuta Electric Wire & Cable Co., Ltd. | Conductive coating material and method for producing shield package using same |
JP6887293B2 (ja) | 2016-04-28 | 2021-06-16 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
WO2017188206A1 (ja) * | 2016-04-28 | 2017-11-02 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
CN113035408B (zh) * | 2020-03-17 | 2024-02-02 | 深圳市百柔新材料技术有限公司 | 太阳能电池栅线浆料及其制备方法,太阳能电池 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3915729A (en) * | 1974-04-09 | 1975-10-28 | Du Pont | High temperature solder pastes |
US4293451A (en) * | 1978-06-08 | 1981-10-06 | Bernd Ross | Screenable contact structure and method for semiconductor devices |
US4273593A (en) * | 1979-06-25 | 1981-06-16 | Scm Corporation | Metal-joining paste and vehicle therefor |
DD153360A1 (de) | 1980-10-01 | 1982-01-06 | Heinz Schicht | Mattierungspaste fuer glas |
US4388346A (en) * | 1981-11-25 | 1983-06-14 | Beggs James M Administrator Of | Electrodes for solid state devices |
US4475682A (en) * | 1982-05-04 | 1984-10-09 | The United States Of America As Represented By The United States Department Of Energy | Process for reducing series resistance of solar cell metal contact systems with a soldering flux etchant |
US4564563A (en) * | 1983-09-30 | 1986-01-14 | Electro Materials Corp. Of America | Solderable conductor |
US4732702A (en) * | 1986-02-13 | 1988-03-22 | Hitachi Chemical Company, Ltd. | Electroconductive resin paste |
US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
US5698451A (en) * | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
JP2619289B2 (ja) * | 1989-06-20 | 1997-06-11 | 三井金属鉱業株式会社 | 銅導電性組成物 |
JPH0821254B2 (ja) * | 1991-02-22 | 1996-03-04 | 旭化成工業株式会社 | 銅合金系組成物、それを用いて印刷された成形物、ペーストおよび接着剤 |
JPH0790204A (ja) * | 1993-09-27 | 1995-04-04 | Asahi Chem Ind Co Ltd | 太陽電池外部電極用導体ペースト |
AU701213B2 (en) * | 1995-10-05 | 1999-01-21 | Suniva, Inc. | Self-aligned locally deep-diffused emitter solar cell |
US5922403A (en) * | 1996-03-12 | 1999-07-13 | Tecle; Berhan | Method for isolating ultrafine and fine particles |
EP0961809B1 (en) * | 1997-02-20 | 2007-02-07 | Partnerships Limited, Inc. | Low temperature method and compositions for producing electrical conductors |
US6379745B1 (en) * | 1997-02-20 | 2002-04-30 | Parelec, Inc. | Low temperature method and compositions for producing electrical conductors |
JPH11217522A (ja) * | 1998-02-04 | 1999-08-10 | Sumitomo Rubber Ind Ltd | 導電性ペーストとそれを用いたプリント基板、ならびにその製造方法 |
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
AU4251001A (en) * | 2000-04-28 | 2001-11-12 | Merck Patent Gmbh | Etching pastes for inorganic surfaces |
KR100856905B1 (ko) | 2001-06-28 | 2008-09-05 | 파레렉 인코포레이션 | 전도체 제조를 위한 합성물과 그 저온제조방법 |
JP3928558B2 (ja) * | 2002-01-30 | 2007-06-13 | 株式会社村田製作所 | 導電性ペースト |
-
2003
- 2003-11-18 JP JP2003388424A patent/JP4549655B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-22 EP EP04790738A patent/EP1687831B1/en not_active Not-in-force
- 2004-10-22 WO PCT/EP2004/011941 patent/WO2005050673A1/en active IP Right Grant
- 2004-10-22 KR KR1020067006318A patent/KR101285461B1/ko not_active IP Right Cessation
- 2004-10-22 DE DE602004009213T patent/DE602004009213T2/de active Active
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- 2004-10-22 CN CN2004800338559A patent/CN1883012B/zh not_active Expired - Fee Related
- 2004-10-22 AT AT04790738T patent/ATE374426T1/de not_active IP Right Cessation
- 2004-10-22 ES ES04790738T patent/ES2294554T3/es active Active
- 2004-11-16 TW TW093135122A patent/TWI263697B/zh not_active IP Right Cessation
-
2007
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Non-Patent Citations (1)
Title |
---|
None * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202011000518U1 (de) | 2011-03-09 | 2012-01-18 | Deutsche Cell Gmbh | Elektrisch leitfähige Kontaktstrukturen auf einer Substratoberfläche |
EP2498296A1 (de) | 2011-03-09 | 2012-09-12 | Deutsche Solar AG | Verfahren zur Erzeugung von elektrisch leitfähigen Kontaktstrukturen auf einer Substratoberfläche |
Also Published As
Publication number | Publication date |
---|---|
WO2005050673A1 (en) | 2005-06-02 |
TW200523397A (en) | 2005-07-16 |
KR20060119992A (ko) | 2006-11-24 |
CN1883012B (zh) | 2012-08-08 |
ES2294554T3 (es) | 2008-04-01 |
TWI263697B (en) | 2006-10-11 |
US20070148810A1 (en) | 2007-06-28 |
EP1687831A1 (en) | 2006-08-09 |
CN1883012A (zh) | 2006-12-20 |
ATE374426T1 (de) | 2007-10-15 |
KR101285461B1 (ko) | 2013-07-12 |
JP4549655B2 (ja) | 2010-09-22 |
DE602004009213D1 (de) | 2007-11-08 |
DE602004009213T2 (de) | 2008-06-26 |
JP2005146181A (ja) | 2005-06-09 |
US8257617B2 (en) | 2012-09-04 |
HK1096196A1 (en) | 2007-05-25 |
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