ATE374426T1 - Funktionale paste - Google Patents

Funktionale paste

Info

Publication number
ATE374426T1
ATE374426T1 AT04790738T AT04790738T ATE374426T1 AT E374426 T1 ATE374426 T1 AT E374426T1 AT 04790738 T AT04790738 T AT 04790738T AT 04790738 T AT04790738 T AT 04790738T AT E374426 T1 ATE374426 T1 AT E374426T1
Authority
AT
Austria
Prior art keywords
functional paste
paste
functional
etching
binder
Prior art date
Application number
AT04790738T
Other languages
English (en)
Inventor
Sylke Klein
Armin Kuebelbeck
Werner Stockum
Jun Nakanowatari
Kiyohiko Kawamoto
Katsumi Tanino
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Application granted granted Critical
Publication of ATE374426T1 publication Critical patent/ATE374426T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Glass Compositions (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
AT04790738T 2003-11-18 2004-10-22 Funktionale paste ATE374426T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003388424A JP4549655B2 (ja) 2003-11-18 2003-11-18 機能性塗料

Publications (1)

Publication Number Publication Date
ATE374426T1 true ATE374426T1 (de) 2007-10-15

Family

ID=34616193

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04790738T ATE374426T1 (de) 2003-11-18 2004-10-22 Funktionale paste

Country Status (11)

Country Link
US (1) US8257617B2 (de)
EP (1) EP1687831B1 (de)
JP (1) JP4549655B2 (de)
KR (1) KR101285461B1 (de)
CN (1) CN1883012B (de)
AT (1) ATE374426T1 (de)
DE (1) DE602004009213T2 (de)
ES (1) ES2294554T3 (de)
HK (1) HK1096196A1 (de)
TW (1) TWI263697B (de)
WO (1) WO2005050673A1 (de)

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* Cited by examiner, † Cited by third party
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JP2006028213A (ja) * 2004-07-12 2006-02-02 Toyama Prefecture 機能性導電塗料並びにそれを用いた電子回路とその形成方法
DE102005007743A1 (de) * 2005-01-11 2006-07-20 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
DE102005033724A1 (de) 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
WO2009067475A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Crystalline solar cell metallization methods
WO2009067483A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US8101231B2 (en) * 2007-12-07 2012-01-24 Cabot Corporation Processes for forming photovoltaic conductive features from multiple inks
DE102009009840A1 (de) * 2008-10-31 2010-05-27 Bosch Solar Energy Ag Verfahren, Vorrichtung und Drucksubstanz zur Herstellung einer metallischen Kontaktstruktur
WO2011032629A1 (en) * 2009-09-18 2011-03-24 Merck Patent Gmbh Ink jet printable etching inks and associated process
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
KR20110139941A (ko) * 2010-06-24 2011-12-30 삼성전기주식회사 금속 잉크 조성물 및 이를 이용한 금속 배선 형성 방법, 그리고 상기 금속 잉크 조성물로 형성된 도전성 패턴
EP2498296A1 (de) 2011-03-09 2012-09-12 Deutsche Solar AG Verfahren zur Erzeugung von elektrisch leitfähigen Kontaktstrukturen auf einer Substratoberfläche
DE202011000518U1 (de) 2011-03-09 2012-01-18 Deutsche Cell Gmbh Elektrisch leitfähige Kontaktstrukturen auf einer Substratoberfläche
DE102011016335B4 (de) * 2011-04-07 2013-10-02 Universität Konstanz Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle
DE102011056087B4 (de) 2011-12-06 2018-08-30 Solarworld Industries Gmbh Solarzellen-Wafer und Verfahren zum Metallisieren einer Solarzelle
US10158032B2 (en) 2012-10-12 2018-12-18 Heraeus Deutschland GmbH & Co. KG Solar cells produced from high Ohmic wafers and halogen containing paste
WO2014146306A1 (zh) * 2013-03-22 2014-09-25 深圳首创光伏有限公司 太阳能电池正面电极导电浆料及其制备方法
CN103596648B (zh) * 2013-02-04 2017-03-15 深圳市首骋新材料科技有限公司 晶体硅太阳能电池正面电极导电浆料及其制备方法
CN103545016B (zh) * 2013-10-21 2016-06-29 深圳市首骋新材料科技有限公司 晶体硅太阳能电池正面电极导电浆料及其制备方法
JP6371099B2 (ja) * 2014-04-18 2018-08-08 ナミックス株式会社 導電性ペースト及び結晶系シリコン太陽電池
JP6425927B2 (ja) * 2014-07-03 2018-11-21 国立研究開発法人産業技術総合研究所 シリコン窒化膜用エッチング剤、エッチング方法
JP5985785B1 (ja) * 2014-09-30 2016-09-06 タツタ電線株式会社 電子部品のパッケージのシールド用導電性塗料及びそれを用いたシールドパッケージの製造方法
JP6887293B2 (ja) * 2016-04-28 2021-06-16 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
WO2017188206A1 (ja) * 2016-04-28 2017-11-02 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
CN113035408B (zh) * 2020-03-17 2024-02-02 深圳市百柔新材料技术有限公司 太阳能电池栅线浆料及其制备方法，太阳能电池

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US3915729A (en) * 1974-04-09 1975-10-28 Du Pont High temperature solder pastes
US4293451A (en) * 1978-06-08 1981-10-06 Bernd Ross Screenable contact structure and method for semiconductor devices
US4273593A (en) * 1979-06-25 1981-06-16 Scm Corporation Metal-joining paste and vehicle therefor
DD153360A1 (de) 1980-10-01 1982-01-06 Heinz Schicht Mattierungspaste fuer glas
US4388346A (en) * 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
US4475682A (en) * 1982-05-04 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Process for reducing series resistance of solar cell metal contact systems with a soldering flux etchant
US4564563A (en) * 1983-09-30 1986-01-14 Electro Materials Corp. Of America Solderable conductor
US4732702A (en) * 1986-02-13 1988-03-22 Hitachi Chemical Company, Ltd. Electroconductive resin paste
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
US5698451A (en) * 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
JP2619289B2 (ja) * 1989-06-20 1997-06-11 三井金属鉱業株式会社 銅導電性組成物
JPH0821254B2 (ja) * 1991-02-22 1996-03-04 旭化成工業株式会社 銅合金系組成物、それを用いて印刷された成形物、ペーストおよび接着剤
JPH0790204A (ja) * 1993-09-27 1995-04-04 Asahi Chem Ind Co Ltd 太陽電池外部電極用導体ペースト
CA2232857C (en) * 1995-10-05 2003-05-13 Jalal Salami Structure and fabrication process for self-aligned locally deep-diffused emitter (salde) solar cell
US5922403A (en) * 1996-03-12 1999-07-13 Tecle; Berhan Method for isolating ultrafine and fine particles
US6379745B1 (en) 1997-02-20 2002-04-30 Parelec, Inc. Low temperature method and compositions for producing electrical conductors
ATE353536T1 (de) * 1997-02-20 2007-02-15 Partnerships Ltd Inc Niedertemperaturverfahren und zusammensetzungen zur herstellung elektischer leiter
JPH11217522A (ja) * 1998-02-04 1999-08-10 Sumitomo Rubber Ind Ltd 導電性ペーストとそれを用いたプリント基板、ならびにその製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
CN100343189C (zh) * 2000-04-28 2007-10-17 默克专利有限公司 用于无机表面的蚀刻糊
CA2451636A1 (en) 2001-06-28 2003-01-09 Parelec, Inc. Low temperature method and compositions for producing electrical conductors
JP3928558B2 (ja) * 2002-01-30 2007-06-13 株式会社村田製作所 導電性ペースト

Also Published As

Publication number Publication date
US20070148810A1 (en) 2007-06-28
EP1687831A1 (de) 2006-08-09
KR101285461B1 (ko) 2013-07-12
DE602004009213T2 (de) 2008-06-26
JP2005146181A (ja) 2005-06-09
WO2005050673A1 (en) 2005-06-02
CN1883012B (zh) 2012-08-08
ES2294554T3 (es) 2008-04-01
JP4549655B2 (ja) 2010-09-22
CN1883012A (zh) 2006-12-20
DE602004009213D1 (de) 2007-11-08
EP1687831B1 (de) 2007-09-26
TW200523397A (en) 2005-07-16
HK1096196A1 (en) 2007-05-25
TWI263697B (en) 2006-10-11
US8257617B2 (en) 2012-09-04
KR20060119992A (ko) 2006-11-24

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Legal Events

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