EP1620947A2 - Fonctionnement d'un demi-pont, en particulier un demi-pont de transistor a effet de champ - Google Patents

Fonctionnement d'un demi-pont, en particulier un demi-pont de transistor a effet de champ

Info

Publication number
EP1620947A2
EP1620947A2 EP04711361A EP04711361A EP1620947A2 EP 1620947 A2 EP1620947 A2 EP 1620947A2 EP 04711361 A EP04711361 A EP 04711361A EP 04711361 A EP04711361 A EP 04711361A EP 1620947 A2 EP1620947 A2 EP 1620947A2
Authority
EP
European Patent Office
Prior art keywords
electrical
connection
bridge
valve
way valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04711361A
Other languages
German (de)
English (en)
Inventor
Martin GÖTZENBERGER
Michael Kirchberger
Wolfgang Speigl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Continental Automotive GmbH
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1620947A2 publication Critical patent/EP1620947A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Definitions

  • the invention relates to a circuit arrangement and a method for controlling operation of a half-bridge by pulse width modulation, in particular in synchronous rectification operation.
  • the half-bridge has at least one controllable bridge valve which has a control connection which is electrically insulated from current-carrying connections of the bridge valve.
  • Field effect transistor half bridges and others e.g. B. IGBTs having half bridges are used in particular in power converters and DC / DC converters, for. B. in automotive engineering.
  • Partial electrical systems are coupled to one another via a DC voltage converter with a MOSFET half bridge.
  • a current generator is connected to the partial electrical system with a nominal voltage of 36 volts. It is therefore a task of the direct voltage converter to supply electrical energy to the sub-electrical system with 12
  • both bridge valves of the half-bridge are activated to reduce losses and to enable an effective energy flow into the partial electrical system with the higher nominal voltage.
  • charge must be discharged from the isolated control connection of the bridge valve or fed there, depending on the type of the bridge valve.
  • a current must flow out of the positively charged control connection in the sense of the conventional current direction (eg gate of an n-channel MOSFET).
  • the reverse case for. B. a p-channel MOSFET.
  • the alignment of any directionally selective circuit components would have to be adjusted, e.g. B. reverse the blocking and flow direction of diodes.
  • a further possibility is to design the driver area involved in the current flow to and from the control connection in such a way that it has a particularly low inductance. This makes it possible to counteract undesired charging of the control connection by removing the charge in a short time, i. H. the required large currents flow out of the control connection. This requires a direct spatial proximity of the driver area to the control connection and a driver which is designed to be correspondingly complex for the control measures.
  • a circuit arrangement for controlling operation of a half bridge by pulse width modulation, in particular in synchronous rectification operation which has the following: a first connection for electrically connecting the circuit arrangement to an insulated control connection (in particular one) of a bridge valve of the half bridge, a second connection for electrical Connecting the circuit arrangement to a further connection, in particular a source connection, of the bridge valve, an electrical line which electrically connects the first connection and the second connection to one another, and an electrical valve which can be switched on and off by pulse-width-modulated signals, the electrical valve is arranged in the electrical line, so that a current flow through the line can be released and blocked.
  • the circuit arrangement is characterized by at least one inductive component in the line mentioned, so that a time profile of an electrical current flow in the line is influenced by an inductance of the inductive component in addition to an influence of any parasitic inductance that may be present.
  • connection is also understood to mean that a corresponding electrical connection has already been established by a continuous electrical line.
  • the circuit arrangement can form a circuitry unit together with the half-bridge.
  • the inductance counteracts a reverse current flow due to an increasing voltage in the bridge valve.
  • the opposite path is taken. Instead of counteracting undesired charging of the control connection by active measures, the current flow out of the control connection is stabilized.
  • the size of the inductance can be selected so that the switching time is acceptable.
  • the size of the additional inductance should therefore be adapted to the respective application. In spite of a small additional inductance, as will be described in more detail below, further measures can be taken to maintain the stabilizing effect of the inductor over a longer period of time.
  • inductivities are achieved which are generally much smaller than 100 nH.
  • the inductance of the one inductive component or the plurality of inductive components in the line is a total of at least 500 nH, preferably at least 2 ⁇ H.
  • the at least one component has a region consisting of ferromagnetic and / or ferromagnetic material and / or soft magnetic material (e.g. made of ferrite), in particular entirely made of ferromagnetic and / or ferromagnetic material - chemical or soft magnetic material.
  • a substrate such as a substrate or a circuit board
  • teardrop-like region be applied from this material '.
  • an electrical one-way valve is connected between the first connection and the second connection, so that the electrical valve that can be switched on and off corresponds to the at least one inductive component electrically connecting sections of the line and the electrical one-way valve form a mesh.
  • the electrical one-way valve is switched so that a direct current flow from the first connection through the electrical one-way valve to the second connection is blocked, but a current flow in the opposite direction is possible through the electrical one-way valve.
  • the one-way valve is a semiconductor diode
  • the sign of the voltage is finally reversed. The process then continues until a value corresponding to the breakdown voltage of the diode is reached. This value can be maintained over a long period of time since the inertia of the inductance maintains a corresponding current flow through the mesh.
  • the mesh forms an oscillating circuit damped by the ohmic resistances involved.
  • the electrical one-way valve it is not necessary to choose large ohmic resistances and thereby prevent the current direction from being reversed.
  • an electrical one-way valve (for distinction: a second one-way valve) is connected in parallel to the inductive component (35, 37) or to at least one of the inductive components.
  • a resistor is also connected in parallel to the inductive component in series with the second one-way valve.
  • the second electrical one-way valve is connected such that a flow of current from the first connection through the second electrical one-way valve to the second connection is blocked, but a current flow in the opposite direction is possible through the second electrical one-way valve. If the control connection is discharged, the second one-way valve is therefore blocked. If, on the other hand, the control connection is charged, a current can flow in parallel through the branch with the second one-way valve and through the inductance into the control connection.
  • a resistor (possibly with a plurality of partial resistors) is connected in series to the at least one inductive component in the line via which the charge is discharged from the control connection. If the bridge valve is connected to the circuit arrangement, the capacitance inherent in the bridge valve between the first and the second connection, the inductance and the resistance form an oscillating circuit.
  • the resistance is dimensioned such that the threshold voltage of the bridge valve is not reached again after it is switched off due to the damping of the vibration by the resistance.
  • the resistance is preferably selected so that the sign of the voltage present between the first and the second connection is reversed and then approaches the value zero without reversing its sign again before the bridge valve is subsequently switched on, if at the two current-carrying ones Connections of the bridge valve no voltage edge occurs, which leads to an increase in voltage above zero.
  • the half-bridge is preferably operated in such a way and / or the circuit arrangement is designed in such a way that a voltage flank that occurs after switching off at the two current-carrying connections of the bridge valve does not appear until the voltage present between the first and the second connection of the circuit arrangement Reversed sign.
  • the inductance Due to the inductance, however, it is achieved that the current through the inductance (and thus out of the control connection) continues to flow in the same direction even after the voltage has reversed its sign u.
  • the size of the resistor and the earliest possible time of switching on again are preferably coordinated with one another in such a way that the current through the inductance has dropped to a predetermined minimum value or to zero at this time. If the resistance was greater, the current flow from the control connection would unnecessarily be braked when the bridge valve was switched off and the switch-off would be delayed.
  • a second electrical valve which can be switched on and off can be connected in series, which is switched on when the bridge valve is switched on and switched off when switched off becomes.
  • an electrical one-way valve eg a diode
  • the first connection e.g to gate
  • the second Connection e.g. to source
  • At least one electrical one-way valve is connected between the first connection and the higher potential of a DC voltage source, the electrical one-way valve being connected such that a flow of current from the higher potential to the first connection through the electrical one-way valve is blocked a current flow in the opposite direction is possible through the electrical one-way valve.
  • the DC voltage source supplies the charge required for switching on the bridge valve
  • the electrical one-way valve can prevent a too large one due to the inductance Voltage at the first switched on and off valve drops, the mono- and could destroy the disengageable 'valve.
  • a method for controlling operation of a half-bridge by pulse width modulation, in particular in synchronous rectification operation is proposed.
  • this method when a bridge valve of the half-bridge is switched off, an electrical current flow between an insulated control connection of the bridge valve on the one hand and a further connection, in particular a source connection, of the bridge valve or a component electrically connected to the further connection of the half-bridge on the other via an inductive component conducted, so that a time course of the electrical current flow is influenced by an inductance of the inductive component in addition to an influence of any parasitic inductance that may be present.
  • FIG. 1 shows a first, particularly preferred embodiment of a circuit arrangement with a connected field effect transistor half bridge
  • FIG. 2 shows a second embodiment of a circuit arrangement with a connected field effect transistor half bridge
  • FIG. 3 shows a time profile of a voltage between a gate connection and a source connection during and after switching off a field effect transistor of the half-bridge in the circuit arrangement according to FIG. 2 and
  • FIG. 4 shows a time profile of a voltage between a gate connection and a source connection during and after switching off a field effect transistor of the half-bridge in the circuit arrangement according to FIG. 1.
  • FIG. 1 shows a circuit arrangement 1 with a connected field-effect transistor half-bridge 13, which has two n-channel MOSFETs (metal oxide semiconductor field-effect transistors) 15, 17 and in each case one free-wheeling diode 19, 21 connected in parallel with the MOSFET 15, 17 ,
  • a ground connection 7 is connected to a source connection 29 of the field-effect transistor 17 referred to below as the “lower” MOSFET.
  • a drain terminal 33 of the lower MOSFET 17 is connected to a half-bridge output 5, the z. B. is connected via a power choke, not shown, to a partial vehicle electrical system of a motor vehicle with a nominal voltage of 12 volts.
  • a source connection 27 of the field-effect transistor 15 referred to below as the “upper” MOSFET is also connected to the half-bridge output 5.
  • a drain connection 31 of the upper MOSFET 15 is connected to a DC voltage connection 3.
  • the DC voltage connection 3 can e.g. B. a partial electrical system of a motor vehicle with a nominal voltage of 36 volts.
  • the gate of the lower MOSFET 17 is connected to a gate terminal 25 of a first driver circuit 11.
  • the gate of the upper MOSFET 15 is connected to a gate terminal 23 of a second driver circuit 9.
  • a source connection 22 of the first driver circuit 11 is connected to the ground connection 7.
  • a source connection 20 of the second driver circuit 9 is connected to the half-bridge output 5.
  • the first driver circuit 11 and the second driver circuit 9 have the same structure. The structure is therefore described below, with reference to the reference numerals of components of both driver circuits 9, 11.
  • the lower potential of a DC voltage source 32, 34 is connected to the source connection 20, 22.
  • a series connection of two switching transistors 43 and 47 or 45 and 49 is connected between the higher and the lower potential of the DC voltage source 32, 34, the emitters of the two transistors 43 and 47 or 45 and 49 being connected to one another via a common emitter path 36, 38 are connected.
  • the base of the two transistors 43 and 47 or 45 and 49 is likewise connected to one another and connected via a resistor 28, 30 to a positive pole of a generator 24, 26 for generating pulse-width-modulated signals.
  • the negative pole of the generator 24, 26 is connected to the source connection 20, 22. Since the two transistors 43 and 47 or 45 and 49 are transistors of different types, the same signal from the generator 24, 26 switches on one of the two transistors 43 and 47 or 45 and 49 and the respective one other of the two transistors 43 and 47 or 45 and 49 turned off simultaneously.
  • the source connection 20, 22 is connected to the gate connection 23, 25 via a first diode 39, 41.
  • the first diode 39, 41 is polarized so that a current flow from the source Connection 20, 22 to the gate connection 23, 25 is possible, but a current flow in the opposite direction is blocked by the first diode 39, 41.
  • the common emitter path 36, 38 is connected to the gate connection 23, 25 via an inductor 35, 37 formed by an inductive component.
  • the inductance lies e.g. B. in the range 10 + 2 ⁇ H.
  • a series circuit with a first resistor 55, 57 and with a second diode 51, 53 is connected in parallel with the inductance 35, 37.
  • the gate connection 23, 25 is connected via a third diode 59, 61 to the higher potential of the DC voltage source 32, 34.
  • the third diode 59, 61 is polarized so that a current flow from the gate connection 23, 25 to the higher potential of the DC voltage source 32, 34 is possible, but a current flow in the opposite direction is blocked by the third diode 59, 61 ,
  • a current path forms via the inductance 35, 37, via part of the common emitter path 36, 38, via the switching transistor 43, 45 connected to the lower potential of the DC voltage source 32, 34 and via the connection between a line 16, 18 to the switching transistor 43, 45 to the source connection 20, 22. At least over part of this line 16, 18, when the MOSFET 15, 17 is switched off, charge is derived from the gate of the MOSFET 15, 17.
  • MOSFET 15, 17 Processes when the MOSFET 15, 17 are switched off are also described below with reference to FIG. 4.
  • the components of the two driver circuits 9, 11 and the respective ones connected to them are again used simultaneously MOSFET 15, 17 is referred to, although the MOSFET 15, 17 of the half-bridge 13 are turned on and off in opposite directions, and in practice a dead time is observed even before one of the two MOSFETs 15, 17 is turned on, in which neither 17 is switched on.
  • the source connection 27, 29 and the drain connection 31, 33 of the MOSFET 15, 17 are connected to one another in an electrically conductive manner.
  • the switching transistor 47, 49 connected to the higher potential of the DC voltage source 32, 34 is switched on and the switching transistor 43, 45 connected to the lower potential of the DC voltage source 32, 34 is switched off.
  • the gate is therefore connected to the higher potential of the DC voltage source 32, 34 via the switching transistor 47, 49 and via the inductor 35, 37 and via the series circuit 55 and 51 or 57 and 53 connected in parallel.
  • the switching off of the MOSFET 15, 17 is now initiated in that the switching transistor 47, 49 is switched off via a signal from the generator 24, 26 and, at the same time, the switching transistor 43, 45 connected to the lower potential of the DC voltage source 32, 34 is switched on.
  • the gate is connected to the lower potential of the DC voltage source 32, 34 via the inductance 35, 37 and via the switching transistor 43, 45. Because of the inductance 35, 37, a high current does not immediately flow out of the gate, but rather the current begins to rise approximately in accordance with the shape of a sine curve. Accordingly takes the voltage U GS similar to a cosine curve (Fig. 4).
  • Stretch drain-source becomes non-conductive. From this point in time, the voltage between drain and source can rise steeply and the effect described at the outset can occur, which can lead to the gate being recharged again. When the voltage edge occurs depends in particular on the direction of current at the half-bridge output 5.
  • the third diode 59, 61 is, as already described in the general part of the description, serve, after switching of the MOSFET 15, 17 to prevent a too high voltage to the switched-off 'switch transistor 43, 45th If the potential at the gate connection 23, 25 assumes higher values than the higher potential of the DC voltage source 32, 34, a current begins to flow through the third diode 59, 61 and reduces the excessively high voltage.
  • the circuit arrangement 91 shown in FIG. 2 with the field-effect transistor half-bridge 13 connected to it has extensive similarities with the arrangement shown in FIG. 1. It also has a first driver switch device 69 and a second driver circuit 71. Identical and functionally identical features are designated with the same reference symbols as in FIG. 1 and are not explained again. This applies in particular to the construction of the half-bridge 13. The differences are discussed below.
  • the common emitter path 16, 18 of the two switching transistors 43 and 47 or 45 and 49 is connected to the gate connection 23, 25 via the inductance 35, 37 and a resistor 83, 85 connected in series therewith. Both sides of the resistor 83, 85 are each connected via a diode 87, 89 or 79, 81 to the higher potential of the DC voltage source 32, 34, a current flow from the resistor 83, 85 to the higher potential of the DC voltage source 32, 34 being possible is, however, a current flow in the opposite direction through the diode 87, 89 and 79, 81 is blocked.
  • the diodes 87, 89 and 79, 81 serve the same purpose as the diode 59, 61 from FIG. 1.
  • a further diode 75, 77 is connected between the lower potential of the DC voltage source 32, 34 and the common emitter path 16, 18, whereby a current flow from the lower potential of the DC voltage source 32, 34 to the common emitter path 36, 38 is possible, however Current flow in the opposite direction is blocked by the further diode 75, 77.
  • the further diode 75, 77 serves to ensure that the
  • the resistor 83, 85 dampens an oscillation, inter alia, by the inductance 35, 37 and by that in the
  • MOSFET 15, 17 existing capacitance between the gate and source formed resonant circuit in the sense that the voltage U GS does not return to positive values after reaching negative values and before the MOSFET 15, 17 is switched on again, but gradually approaches zero. This applies in any case if, when the MOSFET 15, 17 is switched off, there is no or only a small span between source and drain. flank occurs. If a large voltage edge occurs, the voltage U GS can again assume positive values, which, however, turn out to be lower than without the measures described.
  • the current through the inductor 35, 37 continues to flow away from the gate due to its stabilizing effect, even after the voltage U GS has assumed negative values. Only when the voltage U GS has reached its minimum does the current direction reverse again. The current decreases to zero over a long period of time until the MOSFET 15, 17 is switched on again.
  • an inductance in the gate line can effectively prevent charging of the gate before the field effect transistor is switched on again.

Abstract

L'invention concerne un circuit (1) destiné à commander le fonctionnement d'un demi-pont (13) par modulation d'impulsions en largeur, en particulier dans un mode de rectification synchrone. Ledit circuit comprend une première connexion (23, 25) destinée à connecter électriquement le circuit (1) à une borne de gâchette isolée d'une vanne de pont (15, 17) du demi-pont (13), une seconde connexion (20, 22) destinée à connecter électriquement ledit circuit (1) à un terminal supplémentaire de la vanne de pont (15, 17), une ligne électrique (16, 18), qui relie électriquement la première connexion (23, 25) et la seconde connexion (20, 22), et une électrovanne (43, 45) qui peut être commutée ou non par des signaux à impulsions modulés en largeur. Ladite électrovanne (43, 45) est disposée dans la ligne électrique (16, 18), de sorte qu'un flux de courant peut être libéré ou bloqué à travers ladite ligne électrique (16, 18). L'invention est caractérisée en ce qu'au moins un composant (35, 37) inductif est disposé dans la ligne électrique (16, 18), de sorte que la course temporelle d'un flux de courant électrique dans la ligne électrique (16, 18) est influencée par l'inductance du composant (35, 37) inductif, et de plus par l'influence d'une inductance parasite pouvant être présente.
EP04711361A 2003-02-18 2004-02-16 Fonctionnement d'un demi-pont, en particulier un demi-pont de transistor a effet de champ Withdrawn EP1620947A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10306809A DE10306809A1 (de) 2003-02-18 2003-02-18 Betrieb einer Halbbrücke, insbesondere einer Feldeffekttransistor-Halbbrücke
PCT/EP2004/001443 WO2004075405A2 (fr) 2003-02-18 2004-02-16 Fonctionnement d'un demi-pont, en particulier un demi-pont de transistor a effet de champ

Publications (1)

Publication Number Publication Date
EP1620947A2 true EP1620947A2 (fr) 2006-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP04711361A Withdrawn EP1620947A2 (fr) 2003-02-18 2004-02-16 Fonctionnement d'un demi-pont, en particulier un demi-pont de transistor a effet de champ

Country Status (4)

Country Link
US (1) US7332942B2 (fr)
EP (1) EP1620947A2 (fr)
DE (1) DE10306809A1 (fr)
WO (1) WO2004075405A2 (fr)

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US20070115705A1 (en) 2007-05-24
WO2004075405A3 (fr) 2006-09-14
WO2004075405A2 (fr) 2004-09-02
DE10306809A1 (de) 2004-09-02
US7332942B2 (en) 2008-02-19

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