EP1620870A1 - Dispositif photoelectrochimique - Google Patents
Dispositif photoelectrochimiqueInfo
- Publication number
- EP1620870A1 EP1620870A1 EP04731114A EP04731114A EP1620870A1 EP 1620870 A1 EP1620870 A1 EP 1620870A1 EP 04731114 A EP04731114 A EP 04731114A EP 04731114 A EP04731114 A EP 04731114A EP 1620870 A1 EP1620870 A1 EP 1620870A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- metallic
- pec
- counter electrode
- substrates
- pec device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 239000003792 electrolyte Substances 0.000 claims abstract description 13
- 230000003197 catalytic effect Effects 0.000 claims abstract description 4
- 239000011241 protective layer Substances 0.000 claims abstract description 4
- 239000011532 electronic conductor Substances 0.000 claims abstract description 3
- 239000007769 metal material Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011888 foil Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 206010010144 Completed suicide Diseases 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical group B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 150000004763 sulfides Chemical class 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 150000004772 tellurides Chemical class 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 2
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 8
- 239000010935 stainless steel Substances 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910000619 316 stainless steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010411 electrocatalyst Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2081—Serial interconnection of cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Definitions
- This invention relates to photovoltaic (PV) devices and more particularly, but not exclusively, to photoelectrochemical photovoltaic devices.
- this invention relates to methods of manufacturing such devices.
- photovoltaic devices are available for conversion of energy of electromagnetic radiation to electrical energy. These include a conventional solid- state devices (see M. Green Third generation photovoltaics: concepts for high ef- ficiency at low cost, The Electrochemical Society Proceedings, Vol. 2001 -10, p. 3- 18) and more recently developed photoelectrochemical (PEC) devices
- Photoelectrochemical devices are capable of being fabricated in a laminate arrangement between two large area substrates.
- One typical arrangement involves two glass substrates, each utilising an electrically conducting coating upon the internal surface of the substrate. At least one of said first and second substrates is substantially transparent to visible light, as is the attached transparent electrically conducting (TEC) coating.
- PEC cells contain a working electrode, typically comprising a dye-sensitised, nanoporous semiconducting oxide (e.g. titanium dioxide known as titania) layer attached to one conductive coating, and a counter electrode, typically comprising a redox electrocatalyst layer attached to the other conductive coating.
- An electrolyte containing a redox mediator is located between the photoanode and cathode, and the electrolyte is sealed from the environment.
- the TEC coatings which usually comprise a metal ox- ide(s)
- the photoelectrochemical cells are connected in series, internally within a single module.
- Metallic conductors are used for such interconnection.
- choice of metallic conductors is limited to platinum and similar metals, titanium and tungsten because of chemical interactions with the typical iodide containing electrolyte of a photoelectrochemical cell.
- the invention provides for using layers of electrically conductive but chemically inert materials (e.g. diamond and electrically conducting nitrides and carbides) layers to conduct electrical current inside photoelectrochemical cell while protecting metallic components of the photoelectrochemical cell. It has been discovered that thin layers of these materials provide sufficient conductivity to electrically connect highly conductive metallic components, at the same time these materials are chemically inert towards electrolytes utilised in PEC.
- the electrical conductivity of the protecting layer can be modified by variation of composition or thickness so that the layer can be opti- mised for different applications (e.g. light conditions).
- the protective layers could be deposited using any known technology for their formation (e.g. arc deposition, sol-gel, sputtering, CVD, etc.).
- the layer is required to be sufficiently electrically conductive to enable viable electrical output while being chemically inert toward components of the photoelectrochemical cell.
- the invention also provides for these layers being formed directly on substrate (glass, polymeric materials) without an intermediate metallic component, when requirement for electrical conduc- tance are not high (e.g. - for low light conditions or small cell size).
- This invention is based on realisation that some materials such as titanium nitride form pinhole free strongly bound coatings that protect metallic conductors and, at the same time, provide electrical conductivity sufficient for successful operation of PEC device.
- Some materials such as titanium nitride form pinhole free strongly bound coatings that protect metallic conductors and, at the same time, provide electrical conductivity sufficient for successful operation of PEC device.
- Our experiments demonstrated that although unprotected 316 stainless steel substrate corrodes within several days of operation at room temperature, causing irreversible damage to electrolyte of the PEC device, a thin and dense layer of TiN coating deposited on the same substrate ensures many months of successful operations at 75 °C. Further analysis demonstrated that certain non-metallic materials satisfy requirements of corrosion protection and electrical conductivity by way of a several micron thick film.
- Still preferred materials for the purpose of this invention are: titanium nitride (TiN), zirconium nitride and boron carbide.
- Further preferred materials include suicides of niobium, molybdenum, tantalum, tungsten or vanadium.
- a TiN layer is deposited on metal foil or plate (e.g. stainless steel foil), thus protecting the foil from electrolyte of the cell.
- the foil or plate serves as a substrate for either working or counter electrode of the photoelectrochemical cell.
- a TiN layer is deposited on metallic mesh, used to conduct electrical current generated locally inside a cell to the external terminals.
- the mesh could be used in either or both working or/and counter electrodes of a photoelectrochemical cell.
- a TiN layer is deposited on metallic conductor used to interconnect photoelectrochemical cells in a series connected module.
- metallic conductor used to interconnect photoelectrochemical cells in a series connected module.
- both the working electrode and the counter electrode are divided each into electrically isolated portions, and the said metallic conductor connects at least one portion of the working electrode to a portion of the counter electrode
- Figure 1 is an enlarged cross sectional view of a PEC device formed in accordance with one example of the invention.
- Figure 2 is an enlarged cross sectional of a PEC device formed in accordance with another example of the invention
- Figure 3a is an enlarged cross sectional of a PEC device formed in accordance with further example of the invention
- Figure 3b is a diagrammatic representation of protected stainless steel mesh utilized in the previous example of the invention.
- the working electrode substrate comprises Stainless Steel foil 1 protected by TiN coating 2.
- Working electrode 3 (dye sensitised Ti0 2 ) formed on TiN coating (3 microns thick, filtered plasma deposition).
- the counter electrode 5 (thin dispersed Pt catalytic layer) of the device is formed on transpar- ent electrically conductive substrate 6 (polymeric film coated by TEC). Electrolyte 4 is placed between the two electrodes.
- the device is sealed by silicone based sealant 7. This device is to be illuminated from the counter electrode side.
- a stainless steel foil 1 protected by TiN coating 2 supports counter electrode 5 of a PEC device.
- the working electrode is supported by a transparent electrically conductive substrate 6, to which a stainless steel mesh 8 coated by TiN 2 is attached.
- the said stainless steel mesh enhances electrical connection to a working electrode 3 (dye sensitised Ti0 2 ).
- the device is sealed by silicone based sealant 7. This device is to be illuminated from the working electrode side.
- the stainless steel mesh 8 (50 ⁇ aperture, 30 ⁇ wire) is protected by TiN coating 2.
- a PEC device is formed between two transparent substrates 6.
- Each substrate is coated by a transparent electronic conductor 9 (TEC, F-doped tin oxide).
- Isolation lines 10 in TEC created with aid of laser radiation divide each electrode into small portions.
- the working electrode substrate is coated by dye sensitised Ti0 2 layer 3 and counter electrode substrate - by a catalytic layer 5.
- 3 independent cells are formed by filling spaces between the electrode with an electrolyte 4.
- a conductor is used to connect the cells in series.
- the conductor comprises stainless steel core 11 protected by TiN coating 12.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003902117A AU2003902117A0 (en) | 2003-05-05 | 2003-05-05 | Photovoltaic device |
PCT/AU2004/000590 WO2004100196A1 (fr) | 2003-05-05 | 2004-05-05 | Dispositif photoelectrochimique |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1620870A1 true EP1620870A1 (fr) | 2006-02-01 |
EP1620870A4 EP1620870A4 (fr) | 2008-07-09 |
Family
ID=31953470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04731114A Ceased EP1620870A4 (fr) | 2003-05-05 | 2004-05-05 | Dispositif photoelectrochimique |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1620870A4 (fr) |
JP (1) | JP4476278B2 (fr) |
KR (1) | KR100956366B1 (fr) |
AU (1) | AU2003902117A0 (fr) |
WO (1) | WO2004100196A1 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4812311B2 (ja) * | 2005-03-10 | 2011-11-09 | Jx日鉱日石エネルギー株式会社 | 色素増感型太陽電池 |
JP2006286534A (ja) * | 2005-04-04 | 2006-10-19 | Nippon Oil Corp | フレキシブル色素増感太陽電池 |
JP4911556B2 (ja) * | 2005-05-13 | 2012-04-04 | 日本カーリット株式会社 | 色素増感型太陽電池の触媒電極、及びそれを備えた色素増感型太陽電池 |
JP2006324111A (ja) * | 2005-05-18 | 2006-11-30 | Nippon Oil Corp | フレキシブル色素増感太陽電池 |
GB0610596D0 (en) * | 2006-05-30 | 2006-07-05 | Johnson Matthey Plc | Electrode |
JP5127330B2 (ja) * | 2007-07-12 | 2013-01-23 | 日立造船株式会社 | 光電変換素子およびその製造方法 |
JP5127329B2 (ja) * | 2007-07-12 | 2013-01-23 | 日立造船株式会社 | 光電変換素子およびその製造方法 |
JP5364999B2 (ja) * | 2007-12-28 | 2013-12-11 | 大日本印刷株式会社 | 酸化物半導体電極用積層体、酸化物半導体電極、色素増感型太陽電池、および色素増感型太陽電池モジュール |
CN101926042B (zh) * | 2008-02-06 | 2014-04-02 | 株式会社藤仓 | 色素增感太阳能电池 |
DE102008051670A1 (de) * | 2008-10-15 | 2009-11-05 | H2 Solar Gmbh | Silicide zur photoelektrochemischen Wasserspaltung und/oder Erzeugung von Elektrizität |
KR101219488B1 (ko) * | 2011-05-12 | 2013-01-11 | 재단법인대구경북과학기술원 | 염료감응 태양전지 및 그의 제조방법 |
JP6176697B2 (ja) * | 2012-12-10 | 2017-08-09 | inQs株式会社 | 2酸化ケイ素ソーラーセル |
JP6176698B2 (ja) * | 2012-12-13 | 2017-08-09 | inQs株式会社 | 色素増感タンデム2酸化ケイ素ソーラーセル |
JP6176699B2 (ja) * | 2012-12-28 | 2017-08-09 | inQs株式会社 | 色素増感タンデム2酸化ケイ素ソーラーセル |
JP2014238969A (ja) * | 2013-06-07 | 2014-12-18 | シャープ株式会社 | 太陽電池 |
JP6267035B2 (ja) * | 2014-03-28 | 2018-01-24 | 積水化学工業株式会社 | 色素増感太陽電池セルの組込構造及び発電ブラインド用スラット |
CN104505259A (zh) * | 2014-12-18 | 2015-04-08 | 中国科学院上海硅酸盐研究所 | 染料敏化太阳能电池对电极 |
JP6625260B1 (ja) * | 2018-10-18 | 2019-12-25 | 株式会社サイオクス | 構造体の製造方法および構造体の製造装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004064191A1 (fr) * | 2003-01-15 | 2004-07-29 | Sony Corporation | Element de conversion photoélectrique |
EP1548868A1 (fr) * | 2002-10-03 | 2005-06-29 | Fujikura Ltd. | Substrat d'electrode, element de conversion photoelectrique, substrat en verre conducteur et leur procede de production, et cellule solaire de sensibilisation pigmentaire |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE198387T1 (de) * | 1991-10-08 | 2001-01-15 | Unisearch Ltd | Verbessertes optisches design für photozelle. |
DE19640616A1 (de) * | 1996-10-01 | 1998-04-02 | Bernd Dr Penth | Photoelektrochemische Zelle |
SE518454C2 (sv) * | 1999-01-15 | 2002-10-08 | Forskarpatent I Uppsala Ab | Metod för framställning av en elektrokemisk cell samt elektrokemisk cell |
DE50001095D1 (de) * | 1999-02-08 | 2003-02-20 | Kurth Glas & Spiegel Ag Zuchwi | Photovoltaische zelle und verfahren zu deren herstellung |
AUPP967799A0 (en) * | 1999-04-09 | 1999-05-06 | Sustainable Technologies Australia Ltd | Methods to implement sealing and electrical connections to single cell and multi-cell regenerative photovoltaic photoelectrochemical devices |
CN1181563C (zh) * | 1999-12-27 | 2004-12-22 | 精工爱普生株式会社 | 太阳电池以及太阳电池元件 |
KR100351633B1 (ko) * | 2000-04-04 | 2002-09-11 | 한국화학연구원 | 금속염화물로 처리된 필름형 광활성물질과 이의 제조방법 |
JP2003123860A (ja) * | 2001-10-19 | 2003-04-25 | Nec Corp | 光電変換素子及び光電変換素子の製造方法 |
-
2003
- 2003-05-05 AU AU2003902117A patent/AU2003902117A0/en not_active Abandoned
-
2004
- 2004-05-05 JP JP2006504032A patent/JP4476278B2/ja not_active Expired - Fee Related
- 2004-05-05 WO PCT/AU2004/000590 patent/WO2004100196A1/fr active Application Filing
- 2004-05-05 KR KR1020057020960A patent/KR100956366B1/ko not_active IP Right Cessation
- 2004-05-05 EP EP04731114A patent/EP1620870A4/fr not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1548868A1 (fr) * | 2002-10-03 | 2005-06-29 | Fujikura Ltd. | Substrat d'electrode, element de conversion photoelectrique, substrat en verre conducteur et leur procede de production, et cellule solaire de sensibilisation pigmentaire |
WO2004064191A1 (fr) * | 2003-01-15 | 2004-07-29 | Sony Corporation | Element de conversion photoélectrique |
Non-Patent Citations (1)
Title |
---|
See also references of WO2004100196A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP1620870A4 (fr) | 2008-07-09 |
WO2004100196A1 (fr) | 2004-11-18 |
JP4476278B2 (ja) | 2010-06-09 |
KR100956366B1 (ko) | 2010-05-07 |
KR20060035598A (ko) | 2006-04-26 |
JP2006526254A (ja) | 2006-11-16 |
AU2003902117A0 (en) | 2003-05-22 |
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