EP1579528B1 - Übergang von einem rechteckigen hohlleiter auf eine mikrostreifenleitung - Google Patents

Übergang von einem rechteckigen hohlleiter auf eine mikrostreifenleitung Download PDF

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Publication number
EP1579528B1
EP1579528B1 EP03810852A EP03810852A EP1579528B1 EP 1579528 B1 EP1579528 B1 EP 1579528B1 EP 03810852 A EP03810852 A EP 03810852A EP 03810852 A EP03810852 A EP 03810852A EP 1579528 B1 EP1579528 B1 EP 1579528B1
Authority
EP
European Patent Office
Prior art keywords
microstrip line
waveguide
substrate
transition
rib
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03810852A
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English (en)
French (fr)
Other versions
EP1579528A1 (de
Inventor
Ali Louzir
Dominique Lo Hine Tong
Christian Person
Jean-Philippe Coupez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Licensing SAS
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Thomson Licensing SAS
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Filing date
Publication date
Application filed by Thomson Licensing SAS filed Critical Thomson Licensing SAS
Publication of EP1579528A1 publication Critical patent/EP1579528A1/de
Application granted granted Critical
Publication of EP1579528B1 publication Critical patent/EP1579528B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107Hollow-waveguide/strip-line transitions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49016Antenna or wave energy "plumbing" making

Definitions

  • the invention relates to a transition between a rectangular waveguide and a microstrip line.
  • the waveguide structures are often well suited for the realization of passive functions with low losses and high performance (antenna source such as corrugated cones, polarizers, filters, diplexers) more particularly at very high frequencies (centimetric bands and millimeter).
  • the planar structures are on their side very well adapted for the low cost and large volume production of devices incorporating passive and active functions using conventional printed circuit manufacturing processes at frequencies up to the millimetric bands.
  • the antenna source, the filter and the polarizer, if any are made in waveguide technology while the rest of the signal processing functions (weak amplification noise, mixing and intermediate filtering) are performed in conventional printed circuit technology.
  • European Patent No. 0350324 discloses a transition between a waveguide structure and a microstrip transmission line in which a conductive line is supported within the waveguide perpendicularly to its axis and the microstrip transmission line. extends transversely across the wall of the waveguide in a position producing an energy coupling between the microstrip transmission line and the conductive line.
  • a guided structure is formed on a microwave substrate.
  • the rectangular waveguide is made by a double-sided metallization of the microwave substrate associated with metallized holes to make the lateral faces of the rectangular waveguide.
  • the object of the invention is to propose a transition between a rectangular waveguide and a microstrip line that can be manufactured at low cost without assembling several parts.
  • the transition is characterized in that it consists of a ribbed rectangular waveguide made in a bar of synthetic material whose metallized base under the rib is extended in the form of a plate of synthetic material constituting a substrate for the microstrip line, the rib having a bottom extending between the upper plane of the ribbed waveguide and the upper plane of the substrate and the microstrip line being disposed on the upper plane of the substrate in the extension of the bottom of the rib.
  • FIG. 1 shows a block diagram of a transition according to the invention between a rectangular waveguide and a microstrip line.
  • Figures 2 to 4 illustrate the process of manufacturing a transition according to the invention.
  • a transition between a rectangular waveguide and a microstrip line is constituted by a ribbed rectangular waveguide G made in a plastic foam bar which also serves as a substrate for the microstrip line.
  • the foam bar made of synthetic material, for example a polymethacryl imide foam known for its electrical characteristics close to those of air, for its mechanical characteristics of rigidity and lightness and for its weakness. cost, extends in a longitudinal direction A between two ends 1.2 between which is formed a shoulder 3 which extends perpendicular to the longitudinal direction A.
  • This shoulder 3 defines an upper plane 4 of the ribbed waveguide and a top plane 5 of the substrate.
  • the upper plane 5 of the substrate is offset perpendicularly to the longitudinal direction of the bar with a height H relative to the upper plane 4 of the ribbed waveguide, the height H corresponding to the height of the rib of the ribbed waveguide.
  • the bottom of the rib 6 of the waveguide G extends between the upper plane 4 of the waveguide and the upper plane 5 of the substrate through the shoulder 3.
  • the bottom and the lateral walls of the rib 6 are metallized, the metallization of the bottom of the rib 6 continuing on the upper plane 5 of the substrate to form the microstrip line 7.
  • the metallized base 8 of the ribbed waveguide which extends under the rib 6 thus extends in the form of a foam plate constituting the substrate for the microstrip line.
  • This metallized base thus serves as a ground plane for the microstrip line 7.
  • the lateral faces 9 and 10 of the foam bar defining the ribbed rectangular waveguide are also metallized to the limit of the shoulder 3, although the metallization of the lateral flanks of the plate constituting the substrate of the microstrip line may not not degrade the electrical behavior of the microstrip line.
  • the bottom of the rib 6, at the junction with the microstrip line 7, is at a distance E from the ground plane of the microstrip line, this distance E corresponding to the thickness of the substrate at the junction with the ribbed waveguide.
  • the bottom of the rib 6 has a linear profile which allows to achieve simply by machining, stamping, hot pressing or cutting the foam bar.
  • the rib 6 is centered in the width of the foam bar and its dimensions can be adjusted according to the desired working frequency range by ensuring an adequate stepwise transition from the quasi-TEM propagation mode of the microstrip line to the fundamental mode of the microstrip. guide. Such a gradual transition is made according to a given profile, linear, exponential or otherwise. And as a general rule, the minimum length of the profile obtained to ensure correct adaptation over the entire operating range must be of the order of a fraction of the wavelength (for example a quarter of the wavelength) corresponding to the lowest frequency.
  • the microstrip line 7 may have a width identical to that of the rib or larger but it is well known that the width of a microstrip line depends on the thickness of the substrate on which it is arranged as well as its permittivity. Thus, it is possible to adjust the height of the substrate in the junction plane so as to obtain an identical width, or as close as possible to that of the rib. Then, to return to the thickness of the most suitable substrate, for the microstrip line 7, it is sufficient to gradually vary the thickness of the foam plate constituting the substrate in the longitudinal direction A.
  • This thickness variation is made at quasi-constant characteristic impedance simultaneously modifying the width of the microstrip line which avoids passing through quarter-wave-type impedance transformers with discontinuous variation of line width which are at the origin of performance degradations ( losses, reduction of bandwidth).
  • the impedance matching of the microstrip line is illustrated by a continuous linear decrease (represented in dashed line by 11) of the thickness of the substrate in the direction A and by a continuous linear decrease (represented as a line interrupted by 12) the width of the microstrip line over a certain length L of the microstrip line.
  • Figures 2 to 4 illustrate a method of manufacturing the transition according to the invention in foam technology.
  • a foam bar 20 is previously formed into a rectangular cross-sectional shape with dimensions that correspond to the inner dimensions of a rectangular waveguide for mono modal prior operation in the desired frequency range. Then, the foam bar is worked by machining, thermoforming, stamping or other to form the rib 6. The delimiting operation of the rib 6 in the section of the waveguide G can be extended at the section of the microstrip line 7.
  • a complete metallization of the foam block 20 can then to be carried out, the metallization of the rib and the formation of the microstrip line being done simultaneously. Non-directive metallization by projection or brushing may be used.
  • the foam block is cut transversely at the end of the rib 6 to form the plate-like substrate 5 of the microstrip line.
  • the transition according to the invention is therefore carried out in one piece using a material of low permittivity, generating low losses and having good mechanical strength which contributes to obtaining a microstrip line whose dimensions are in agreement with those of the waveguide section. Furthermore, the realization of the transition according to the invention makes it possible to obtain an electrical and physical continuity between the waveguide and the microstrip line without the use of impedance transformers of the discontinuous change in line width type.

Landscapes

  • Waveguides (AREA)
  • Waveguide Aerials (AREA)

Claims (5)

  1. Übergang von einem rechteckigen Hohlleiter auf eine Mikrostreifenleitung, dadurch gekennzeichnet, dass er aus einem Stab (20) aus Kunststoff besteht, der einen ersten Teil, dessen Seitenflächen metallisiert sind, um einen Hohlleiter (G) zu bilden, und einen zweiten Teil umfasst, der den ersten Teil verlängert und ein Substrat für eine Mikrostreifenleitung bildet, wobei der Stab zwischen dem den Hohlleiter bildenden Teil und dem das Substrat bildenden Teil einen Absatz (3) aufweist, der eine obere Ebene (4) des den Hohlleiter bildenden Teils und eine obere Ebene (5) des das Substrat bildenden Teils definiert, und wobei der Stab zwischen den zwei oberen Ebenen eine Rippe (6) mit einem metallisierten Boden und mit metallisierten wänden aufweist, wobei sich der Boden zwischen den zwei oberen Ebenen erstreckt, wobei die Metallisierung des Bodens durch die auf dem Substrat realisierte Mikrostreifenleitung (7) verlängert wird, wobei die gemeinsame Basis (8) des ersten und des zweiten Teils vollständig metallisiert ist.
  2. Übergang nach Anspruch 1, bei dem der Boden der Rippe (6) ein lineares Profil aufweist.
  3. Übergang nach Anspruch 1 oder 2, bei dem der zweite, das Substrat bildender Teil eine Dicke aufweist, die in einer den ersten Teil verlängernden Richtung variiert, um die Breite der Mikrostreifenleitung (7) zu verändern und dabei deren charakteristische Impedanz quasi konstant zu halten.
  4. Übergang nach einem der Ansprüche 1 bis 3, bei dem der Kunststoff ein dielektrischer Schaum ist.
  5. Übergang nach Anspruch 4, bei dem der dielektrische Schaum ein Polymetacrylat-Imid-Schaum ist.
EP03810852A 2003-01-03 2003-12-22 Übergang von einem rechteckigen hohlleiter auf eine mikrostreifenleitung Expired - Lifetime EP1579528B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0300045 2003-01-03
FR0300045A FR2849720B1 (fr) 2003-01-03 2003-01-03 Transition entre un guide d'onde rectangulaire et une ligne microruban
PCT/FR2003/050201 WO2004066432A1 (fr) 2003-01-03 2003-12-22 Transition entre un guide d'onde rectangulaire et une ligne microruban

Publications (2)

Publication Number Publication Date
EP1579528A1 EP1579528A1 (de) 2005-09-28
EP1579528B1 true EP1579528B1 (de) 2006-05-17

Family

ID=32524679

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03810852A Expired - Lifetime EP1579528B1 (de) 2003-01-03 2003-12-22 Übergang von einem rechteckigen hohlleiter auf eine mikrostreifenleitung

Country Status (11)

Country Link
US (1) US7382212B2 (de)
EP (1) EP1579528B1 (de)
JP (1) JP4263176B2 (de)
KR (1) KR100998207B1 (de)
CN (1) CN1322628C (de)
AU (1) AU2003302294A1 (de)
BR (1) BR0317729A (de)
DE (1) DE60305349T2 (de)
FR (1) FR2849720B1 (de)
MX (1) MXPA05007249A (de)
WO (1) WO2004066432A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8305280B2 (en) * 2009-11-04 2012-11-06 Raytheon Company Low loss broadband planar transmission line to waveguide transition
KR101902558B1 (ko) 2010-07-02 2018-10-01 누보트로닉스, 인크. 3차원 마이크로구조체
US8552813B2 (en) 2011-11-23 2013-10-08 Raytheon Company High frequency, high bandwidth, low loss microstrip to waveguide transition
US9065163B1 (en) 2011-12-23 2015-06-23 Nuvotronics, Llc High frequency power combiner/divider
US9405064B2 (en) * 2012-04-04 2016-08-02 Texas Instruments Incorporated Microstrip line of different widths, ground planes of different distances
US8952752B1 (en) 2012-12-12 2015-02-10 Nuvotronics, Llc Smart power combiner
FR3010835B1 (fr) 2013-09-19 2015-09-11 Inst Mines Telecom Telecom Bretagne Dispositif de jonction entre une ligne de transmission imprimee et un guide d'ondes dielectrique
DE102015221142A1 (de) 2014-10-31 2016-05-19 Anritsu Corporation Übertragungsleitungs-Umwandlungsstruktur für ein Millimeterwellenband
CN106024921B (zh) * 2016-06-30 2017-09-15 浙江大学 悬挂型可见光及近红外波段硅基光波导集成光电探测器
CN106061093B (zh) * 2016-08-04 2019-08-23 同方威视技术股份有限公司 用于电子直线加速器的波导系统以及电子直线加速器
KR102674456B1 (ko) 2017-01-26 2024-06-13 주식회사 케이엠더블유 전송선로-도파관 전이 장치
US11664568B2 (en) * 2019-06-11 2023-05-30 Intel Corporation Waveguides including at least one ridge associated with at least one dielectric core and the waveguides are surrounded by a conductive shell
JP2024064072A (ja) * 2022-10-27 2024-05-14 古野電気株式会社 高周波回路、および、レーダ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2897461A (en) * 1953-09-14 1959-07-28 Boeing Co Wave guide construction
US3265995A (en) * 1964-03-18 1966-08-09 Bell Telephone Labor Inc Transmission line to waveguide junction
US3932823A (en) * 1975-04-23 1976-01-13 The United States Of America As Represented By The Secretary Of The Navy Microstrip to waveguide adapter
JPH0435203A (ja) * 1990-05-25 1992-02-06 Sumitomo Electric Ind Ltd マイクロ波デバイス
JPH05335816A (ja) * 1992-06-03 1993-12-17 Japan Radio Co Ltd 導波管−マイクロストリップ線路変換器
DE19636890C1 (de) * 1996-09-11 1998-02-12 Bosch Gmbh Robert Übergang von einem Hohlleiter auf eine Streifenleitung
US6242984B1 (en) * 1998-05-18 2001-06-05 Trw Inc. Monolithic 3D radial power combiner and splitter
DK1055264T3 (da) 1998-12-10 2007-04-30 Raytheon Co Overgang fra bredbåndsmikrostrip til parallel-plade-bölgeleder

Also Published As

Publication number Publication date
KR100998207B1 (ko) 2010-12-07
AU2003302294A1 (en) 2004-08-13
CN1322628C (zh) 2007-06-20
BR0317729A (pt) 2005-11-22
FR2849720B1 (fr) 2005-04-15
FR2849720A1 (fr) 2004-07-09
US7382212B2 (en) 2008-06-03
MXPA05007249A (es) 2005-09-08
JP4263176B2 (ja) 2009-05-13
KR20050089078A (ko) 2005-09-07
DE60305349D1 (de) 2006-06-22
DE60305349T2 (de) 2007-05-10
CN1735995A (zh) 2006-02-15
WO2004066432A1 (fr) 2004-08-05
US20060152298A1 (en) 2006-07-13
JP2006513655A (ja) 2006-04-20
EP1579528A1 (de) 2005-09-28

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