EP1577933A3 - Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate - Google Patents
Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate Download PDFInfo
- Publication number
- EP1577933A3 EP1577933A3 EP05251462A EP05251462A EP1577933A3 EP 1577933 A3 EP1577933 A3 EP 1577933A3 EP 05251462 A EP05251462 A EP 05251462A EP 05251462 A EP05251462 A EP 05251462A EP 1577933 A3 EP1577933 A3 EP 1577933A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- starting substrate
- gan
- crystal
- gan substrate
- crystal gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
- E05B47/00—Operating or controlling locks or other fastening devices by electric or magnetic means
- E05B47/02—Movement of the bolt by electromagnetic means; Adaptation of locks, latches, or parts thereof, for movement of the bolt by electromagnetic means
- E05B47/026—Movement of the bolt by electromagnetic means; Adaptation of locks, latches, or parts thereof, for movement of the bolt by electromagnetic means the bolt moving rectilinearly
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
- E05B17/00—Accessories in connection with locks
- E05B17/20—Means independent of the locking mechanism for preventing unauthorised opening, e.g. for securing the bolt in the fastening position
- E05B17/2084—Means to prevent forced opening by attack, tampering or jimmying
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004075674 | 2004-03-17 | ||
JP2004075674 | 2004-03-17 | ||
JP2004276337 | 2004-09-24 | ||
JP2004276337A JP3888374B2 (ja) | 2004-03-17 | 2004-09-24 | GaN単結晶基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1577933A2 EP1577933A2 (en) | 2005-09-21 |
EP1577933A3 true EP1577933A3 (en) | 2009-03-04 |
Family
ID=34840249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05251462A Withdrawn EP1577933A3 (en) | 2004-03-17 | 2005-03-10 | Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate |
Country Status (6)
Country | Link |
---|---|
US (2) | US20050208687A1 (ko) |
EP (1) | EP1577933A3 (ko) |
JP (1) | JP3888374B2 (ko) |
KR (2) | KR20060043770A (ko) |
CN (1) | CN1670918A (ko) |
TW (1) | TW200532776A (ko) |
Families Citing this family (63)
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---|---|---|---|---|
JP4581490B2 (ja) | 2004-05-31 | 2010-11-17 | 日立電線株式会社 | Iii−v族窒化物系半導体自立基板の製造方法、及びiii−v族窒化物系半導体の製造方法 |
JP4691911B2 (ja) * | 2004-06-11 | 2011-06-01 | 日立電線株式会社 | Iii−v族窒化物系半導体自立基板の製造方法 |
KR100728533B1 (ko) * | 2004-11-23 | 2007-06-15 | 삼성코닝 주식회사 | 질화갈륨 단결정 후막 및 이의 제조방법 |
JP4735949B2 (ja) * | 2005-04-08 | 2011-07-27 | 日立電線株式会社 | Iii−v族窒化物半導体結晶の製造方法およびiii−v族窒化物半導体基板の製造方法 |
DE102005021099A1 (de) * | 2005-05-06 | 2006-12-07 | Universität Ulm | GaN-Schichten |
KR100707166B1 (ko) * | 2005-10-12 | 2007-04-13 | 삼성코닝 주식회사 | GaN 기판의 제조방법 |
JP2007119325A (ja) * | 2005-10-31 | 2007-05-17 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶およびその成長方法 |
KR100695118B1 (ko) * | 2005-12-27 | 2007-03-14 | 삼성코닝 주식회사 | 다중-프리스탠딩 GaN 웨이퍼의 제조방법 |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
US7803344B2 (en) * | 2006-10-25 | 2010-09-28 | The Regents Of The University Of California | Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby |
JP5656401B2 (ja) * | 2006-05-08 | 2015-01-21 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングFreiberger Compound Materials Gmbh | Iii−nバルク結晶及び自立型iii−n基板の製造方法、並びにiii−nバルク結晶及び自立型iii−n基板 |
JP4939844B2 (ja) | 2006-06-08 | 2012-05-30 | ローム株式会社 | ZnO系半導体素子 |
US8980445B2 (en) * | 2006-07-06 | 2015-03-17 | Cree, Inc. | One hundred millimeter SiC crystal grown on off-axis seed |
JP2008028259A (ja) * | 2006-07-24 | 2008-02-07 | Mitsubishi Chemicals Corp | 単結晶GaN基板の製造方法 |
EP1883103A3 (en) * | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
JP4873467B2 (ja) * | 2006-07-27 | 2012-02-08 | 独立行政法人産業技術総合研究所 | オフ角を有する単結晶基板の製造方法 |
JP5125098B2 (ja) * | 2006-12-26 | 2013-01-23 | 信越半導体株式会社 | 窒化物半導体自立基板の製造方法 |
EP2865790A1 (en) | 2006-12-28 | 2015-04-29 | Saint-Gobain Ceramics & Plastics Inc. | Sapphire substrates |
US8740670B2 (en) | 2006-12-28 | 2014-06-03 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
RU2412037C1 (ru) * | 2006-12-28 | 2011-02-20 | Сэнт-Гобэн Керамикс Энд Пластикс, Инк. | Партия сапфировых подложек и способ ее изготовления |
KR101715024B1 (ko) | 2006-12-28 | 2017-03-10 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 사파이어 기판 |
EP2003230A2 (en) | 2007-06-14 | 2008-12-17 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with an epitaxial layer, semiconductor device, and GaN substrate manufacturing method |
JP4952547B2 (ja) * | 2007-06-14 | 2012-06-13 | 住友電気工業株式会社 | GaN基板、エピタキシャル層付き基板、半導体装置、およびGaN基板の製造方法 |
EP2003696B1 (en) | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
WO2008157510A1 (en) | 2007-06-15 | 2008-12-24 | The Regents Of The University Of California | Planar nonpolar m-plane group iii nitride films grown on miscut substrates |
KR101537300B1 (ko) * | 2007-08-08 | 2015-07-16 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 미스컷 기판들 상에 성장된 평면의 무극성 m-면 Ⅲ족-질화물 막들 |
JP2009057247A (ja) * | 2007-08-31 | 2009-03-19 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の成長方法およびiii族窒化物結晶基板 |
JP5181885B2 (ja) * | 2007-10-05 | 2013-04-10 | 住友電気工業株式会社 | GaN基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ |
EP2045374A3 (en) | 2007-10-05 | 2011-02-16 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a GaN substrate and a GaN epitaxial wafer |
JP2009170798A (ja) * | 2008-01-18 | 2009-07-30 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体レーザ |
JP2009167066A (ja) * | 2008-01-18 | 2009-07-30 | Sumitomo Electric Ind Ltd | 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法 |
KR20100107054A (ko) | 2008-02-01 | 2010-10-04 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 웨이퍼 비축 절단에 의한 질화물 발광 다이오드들의 광학 편광의 강화 |
JP2010118647A (ja) * | 2008-10-17 | 2010-05-27 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、窒化物系半導体発光素子を作製する方法、及び発光装置 |
JP4730422B2 (ja) * | 2008-10-24 | 2011-07-20 | 住友電気工業株式会社 | Iii族窒化物半導体電子デバイス、iii族窒化物半導体電子デバイスを作製する方法、及びiii族窒化物半導体エピタキシャルウエハ |
JP5120285B2 (ja) * | 2009-02-05 | 2013-01-16 | 日立電線株式会社 | Iii−v族窒化物系半導体自立基板の製造方法 |
KR20120036816A (ko) * | 2009-06-01 | 2012-04-18 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 반도체 결정 및 그 제조 방법 |
WO2010141943A1 (en) * | 2009-06-05 | 2010-12-09 | The Regents Of The University Of California | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES |
JP5206699B2 (ja) | 2010-01-18 | 2013-06-12 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
US7933303B2 (en) * | 2009-06-17 | 2011-04-26 | Sumitomo Electric Industries, Ltd. | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device |
JP5212283B2 (ja) * | 2009-07-08 | 2013-06-19 | 日立電線株式会社 | Iii族窒化物半導体自立基板の製造方法、iii族窒化物半導体自立基板、iii族窒化物半導体デバイスの製造方法及びiii族窒化物半導体デバイス |
DE102009042349B4 (de) * | 2009-09-20 | 2011-06-16 | Otto-Von-Guericke-Universität Magdeburg | Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente |
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PL224995B1 (pl) * | 2010-04-06 | 2017-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Podłoże do wzrostu epitaksjalnego |
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JP6031733B2 (ja) * | 2010-09-27 | 2016-11-24 | 住友電気工業株式会社 | GaN結晶の製造方法 |
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US20130082274A1 (en) * | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
JP5382742B2 (ja) * | 2011-10-20 | 2014-01-08 | 独立行政法人産業技術総合研究所 | オフ角を有する単結晶基板の製造方法 |
US10043662B2 (en) | 2011-11-21 | 2018-08-07 | Saint-Gobain Cristaux Et Detecteurs | Method of forming semiconductor substrate |
JP2012109624A (ja) * | 2012-03-06 | 2012-06-07 | Sumitomo Electric Ind Ltd | Iii族窒化物発光素子、及びiii族窒化物系半導体発光素子を作製する方法 |
JP6655389B2 (ja) | 2012-03-21 | 2020-02-26 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングFreiberger Compound Materials Gmbh | Iii−nテンプレートの製造方法およびiii−nテンプレート |
CN103378239B (zh) * | 2012-04-25 | 2016-06-08 | 清华大学 | 外延结构体 |
US9368582B2 (en) * | 2013-11-04 | 2016-06-14 | Avogy, Inc. | High power gallium nitride electronics using miscut substrates |
GB2526078A (en) | 2014-05-07 | 2015-11-18 | Infiniled Ltd | Methods and apparatus for improving micro-LED devices |
FR3029942B1 (fr) * | 2014-12-11 | 2020-12-25 | Saint Gobain Lumilog | Procede de fabrication de plaquettes de nitrure d'element 13 a angle de troncature non nul |
US9899564B2 (en) * | 2016-03-23 | 2018-02-20 | Panasonic Intellectual Property Management Co., Ltd. | Group III nitride semiconductor and method for producing same |
KR20180069403A (ko) * | 2016-12-15 | 2018-06-25 | 삼성전자주식회사 | 질화 갈륨 기판의 제조 방법 |
JP7079683B2 (ja) * | 2018-07-11 | 2022-06-02 | 住友電気工業株式会社 | 窒化ガリウム結晶基板およびその結晶評価方法 |
CN115087767B (zh) * | 2020-03-02 | 2024-02-20 | 住友电气工业株式会社 | 砷化镓单晶衬底和砷化镓单晶衬底的制造方法 |
DE112022001212T5 (de) | 2021-02-25 | 2024-01-11 | Ngk Insulators, Ltd. | Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001068955A1 (en) * | 2000-03-13 | 2001-09-20 | Advanced Technology Materials, Inc. | Iii-v nitride substrate boule and method of making and using the same |
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JPH039515A (ja) * | 1989-06-07 | 1991-01-17 | Sharp Corp | 半導体装置 |
JP3599896B2 (ja) * | 1995-05-19 | 2004-12-08 | 三洋電機株式会社 | 半導体レーザ素子および半導体レーザ素子の製造方法 |
WO1999023693A1 (en) * | 1997-10-30 | 1999-05-14 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
US6576932B2 (en) * | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US6773504B2 (en) * | 2001-04-12 | 2004-08-10 | Sumitomo Electric Industries, Ltd. | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
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-
2004
- 2004-09-24 JP JP2004276337A patent/JP3888374B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-22 TW TW094105270A patent/TW200532776A/zh unknown
- 2005-03-10 EP EP05251462A patent/EP1577933A3/en not_active Withdrawn
- 2005-03-16 CN CNA2005100563144A patent/CN1670918A/zh active Pending
- 2005-03-17 KR KR1020050022331A patent/KR20060043770A/ko not_active Application Discontinuation
- 2005-03-17 US US10/907,033 patent/US20050208687A1/en not_active Abandoned
-
2008
- 2008-05-16 US US12/121,806 patent/US20080219910A1/en not_active Abandoned
-
2011
- 2011-07-12 KR KR1020110069032A patent/KR20110088483A/ko not_active Application Discontinuation
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WO2001068955A1 (en) * | 2000-03-13 | 2001-09-20 | Advanced Technology Materials, Inc. | Iii-v nitride substrate boule and method of making and using the same |
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GEORGAKILAS A ET AL: "MBE GROWTH OF DIFFERENT HEXAGONAL GAN CRYSTAL STRUCTURES ON VICINAL (100) GAAS SUBSTRATES", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B82, no. 1-03, 22 May 2001 (2001-05-22), pages 16 - 18, XP001150270, ISSN: 0921-5107 * |
KIRILYUK V ET AL: "Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 230, no. 3-4, 1 September 2001 (2001-09-01), pages 477 - 480, XP004296555, ISSN: 0022-0248 * |
MOTOKI K ET AL: "Preparation of large GaN substrates", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 93, no. 1-3, 30 May 2002 (2002-05-30), pages 123 - 130, XP004351260, ISSN: 0921-5107 * |
ZAUNER A R A ET AL: "Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 210, no. 4, 1 March 2000 (2000-03-01), pages 435 - 443, XP004191355, ISSN: 0022-0248 * |
ZAUNER A R A ET AL: "Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 240, no. 1-2, 1 April 2002 (2002-04-01), pages 14 - 21, XP004351387, ISSN: 0022-0248 * |
Also Published As
Publication number | Publication date |
---|---|
EP1577933A2 (en) | 2005-09-21 |
TW200532776A (en) | 2005-10-01 |
JP3888374B2 (ja) | 2007-02-28 |
US20080219910A1 (en) | 2008-09-11 |
CN1670918A (zh) | 2005-09-21 |
US20050208687A1 (en) | 2005-09-22 |
KR20110088483A (ko) | 2011-08-03 |
JP2005298319A (ja) | 2005-10-27 |
KR20060043770A (ko) | 2006-05-15 |
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