EP1554081A4 - Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques - Google Patents

Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques

Info

Publication number
EP1554081A4
EP1554081A4 EP03708894A EP03708894A EP1554081A4 EP 1554081 A4 EP1554081 A4 EP 1554081A4 EP 03708894 A EP03708894 A EP 03708894A EP 03708894 A EP03708894 A EP 03708894A EP 1554081 A4 EP1554081 A4 EP 1554081A4
Authority
EP
European Patent Office
Prior art keywords
cleaning
post
aqueous
combination
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03708894A
Other languages
German (de)
French (fr)
Other versions
EP1554081A1 (en
Inventor
Souvik Banerjee
Harlan Forrest Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RAVE N.P.
Original Assignee
BOC Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Inc filed Critical BOC Inc
Publication of EP1554081A1 publication Critical patent/EP1554081A1/en
Publication of EP1554081A4 publication Critical patent/EP1554081A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
EP03708894A 2002-08-09 2003-01-28 Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques Withdrawn EP1554081A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US215859 1988-07-06
US10/215,859 US20040029494A1 (en) 2002-08-09 2002-08-09 Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
PCT/US2003/002643 WO2004014604A1 (en) 2002-08-09 2003-01-28 Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques

Publications (2)

Publication Number Publication Date
EP1554081A1 EP1554081A1 (en) 2005-07-20
EP1554081A4 true EP1554081A4 (en) 2010-05-19

Family

ID=31494951

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03708894A Withdrawn EP1554081A4 (en) 2002-08-09 2003-01-28 Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques

Country Status (8)

Country Link
US (1) US20040029494A1 (en)
EP (1) EP1554081A4 (en)
JP (1) JP3786651B2 (en)
KR (1) KR20050055699A (en)
CN (1) CN100377836C (en)
AU (1) AU2003212854A1 (en)
TW (1) TWI249783B (en)
WO (1) WO2004014604A1 (en)

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US6764386B2 (en) * 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
US6852173B2 (en) * 2002-04-05 2005-02-08 Boc, Inc. Liquid-assisted cryogenic cleaning
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US20060124155A1 (en) * 2004-12-13 2006-06-15 Suuronen David E Technique for reducing backside particles
JP4528677B2 (en) 2005-06-24 2010-08-18 株式会社東芝 Patterned medium manufacturing method and manufacturing apparatus
JP4533809B2 (en) 2005-06-28 2010-09-01 株式会社東芝 Method for manufacturing substrate for discrete track medium and method for manufacturing discrete track medium
US8252119B2 (en) * 2008-08-20 2012-08-28 Micron Technology, Inc. Microelectronic substrate cleaning systems with polyelectrolyte and associated methods
US8636913B2 (en) 2011-12-21 2014-01-28 HGST Netherlands B.V. Removing residues in magnetic head fabrication
DE102012204169A1 (en) * 2012-03-16 2013-09-19 Bayerische Motoren Werke Aktiengesellschaft Method for mechanical cleaning of contaminated, unpainted, and class-A-painted plastic, fiber-composite surface of carbon-fiber reinforced roof of motor car, involves gap-freely providing plastic surface, and applying surface with cold jet
SG195419A1 (en) * 2012-06-05 2013-12-30 Jcs Echigo Pte Ltd Method and apparatus for cleaning articles
JP2017011225A (en) * 2015-06-25 2017-01-12 株式会社フジミインコーポレーテッド Polishing method, composition for removing impurity, and substrate and method for manufacturing the same
US9687885B2 (en) * 2015-07-17 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-cycle wafer cleaning method
CN106711018B (en) * 2015-11-16 2019-12-10 兆远科技股份有限公司 semiconductor wafer surface processing method
CN108704879A (en) * 2018-04-08 2018-10-26 苏州珮凯科技有限公司 The stainless steel parts regeneration method of 8 cun of wafer manufacture Endura IMP techniques of semiconductor
CN108672352A (en) * 2018-04-08 2018-10-19 苏州珮凯科技有限公司 The Ti material parts regeneration methods of the TiN techniques of 8 cun of wafer manufacture thin film manufacture process of semiconductor
TW202110575A (en) 2019-05-29 2021-03-16 美商應用材料股份有限公司 Steam treatment stations for chemical mechanical polishing system
US11633833B2 (en) 2019-05-29 2023-04-25 Applied Materials, Inc. Use of steam for pre-heating of CMP components
US11628478B2 (en) 2019-05-29 2023-04-18 Applied Materials, Inc. Steam cleaning of CMP components
CN111167791B (en) * 2020-01-10 2021-08-17 深圳仕上电子科技有限公司 Cleaning method of organic evaporation protection piece
JP2023518650A (en) 2020-06-29 2023-05-08 アプライド マテリアルズ インコーポレイテッド Steam generation control for chemical mechanical polishing

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JPH06196472A (en) * 1992-12-22 1994-07-15 Soltec:Kk Wet etching method and wet cleansing method
US5582650A (en) * 1995-01-13 1996-12-10 International Paper Company Process for cleaning parts soiled or encrusted with polyester resin
WO1998014985A1 (en) * 1996-09-30 1998-04-09 Verteq, Inc. Wafer cleaning system
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
WO2000061306A1 (en) * 1999-04-12 2000-10-19 Steag Microtech Gmbh Method and device for cleaning substrates
US6296716B1 (en) * 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles

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US5344494A (en) * 1993-01-21 1994-09-06 Smith & Nephew Richards, Inc. Method for cleaning porous and roughened surfaces on medical implants
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US5922136A (en) * 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
US5961732A (en) * 1997-06-11 1999-10-05 Fsi International, Inc Treating substrates by producing and controlling a cryogenic aerosol
US5935869A (en) * 1997-07-10 1999-08-10 International Business Machines Corporation Method of planarizing semiconductor wafers
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US5928434A (en) * 1998-07-13 1999-07-27 Ford Motor Company Method of mitigating electrostatic charge during cleaning of electronic circuit boards
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US6419566B1 (en) * 2000-02-11 2002-07-16 International Business Machines Corporation System for cleaning contamination from magnetic recording media rows
US6530823B1 (en) * 2000-08-10 2003-03-11 Nanoclean Technologies Inc Methods for cleaning surfaces substantially free of contaminants
US6425956B1 (en) * 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
KR100421038B1 (en) * 2001-03-28 2004-03-03 삼성전자주식회사 Cleaning apparatus for removing contaminants from surface and cleaning method using the same
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
JP3958080B2 (en) * 2002-03-18 2007-08-15 東京エレクトロン株式会社 Method for cleaning member to be cleaned in plasma processing apparatus
US6852173B2 (en) * 2002-04-05 2005-02-08 Boc, Inc. Liquid-assisted cryogenic cleaning
US6949145B2 (en) * 2002-04-05 2005-09-27 Boc, Inc. Vapor-assisted cryogenic cleaning
JP2005522056A (en) * 2002-04-05 2005-07-21 ビーオーシー・インコーポレーテッド Fluid assisted cryogenic cleaning
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JPH06196472A (en) * 1992-12-22 1994-07-15 Soltec:Kk Wet etching method and wet cleansing method
US5582650A (en) * 1995-01-13 1996-12-10 International Paper Company Process for cleaning parts soiled or encrusted with polyester resin
WO1998014985A1 (en) * 1996-09-30 1998-04-09 Verteq, Inc. Wafer cleaning system
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
WO2000061306A1 (en) * 1999-04-12 2000-10-19 Steag Microtech Gmbh Method and device for cleaning substrates
US6296716B1 (en) * 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles

Non-Patent Citations (2)

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See also references of WO2004014604A1 *

Also Published As

Publication number Publication date
JP3786651B2 (en) 2006-06-14
KR20050055699A (en) 2005-06-13
EP1554081A1 (en) 2005-07-20
TWI249783B (en) 2006-02-21
JP2004079992A (en) 2004-03-11
CN100377836C (en) 2008-04-02
WO2004014604A1 (en) 2004-02-19
CN1675028A (en) 2005-09-28
TW200405447A (en) 2004-04-01
US20040029494A1 (en) 2004-02-12
AU2003212854A1 (en) 2004-02-25

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