EP1554081A4 - Post-cmp-reinigung von halbleiterwaferflüchen unter verwendung von wässrigen und kryogenen reinigungstechniken - Google Patents
Post-cmp-reinigung von halbleiterwaferflüchen unter verwendung von wässrigen und kryogenen reinigungstechnikenInfo
- Publication number
- EP1554081A4 EP1554081A4 EP03708894A EP03708894A EP1554081A4 EP 1554081 A4 EP1554081 A4 EP 1554081A4 EP 03708894 A EP03708894 A EP 03708894A EP 03708894 A EP03708894 A EP 03708894A EP 1554081 A4 EP1554081 A4 EP 1554081A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- cleaning
- post
- aqueous
- combination
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US215859 | 1988-07-06 | ||
US10/215,859 US20040029494A1 (en) | 2002-08-09 | 2002-08-09 | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
PCT/US2003/002643 WO2004014604A1 (en) | 2002-08-09 | 2003-01-28 | Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1554081A1 EP1554081A1 (de) | 2005-07-20 |
EP1554081A4 true EP1554081A4 (de) | 2010-05-19 |
Family
ID=31494951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03708894A Withdrawn EP1554081A4 (de) | 2002-08-09 | 2003-01-28 | Post-cmp-reinigung von halbleiterwaferflüchen unter verwendung von wässrigen und kryogenen reinigungstechniken |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040029494A1 (de) |
EP (1) | EP1554081A4 (de) |
JP (1) | JP3786651B2 (de) |
KR (1) | KR20050055699A (de) |
CN (1) | CN100377836C (de) |
AU (1) | AU2003212854A1 (de) |
TW (1) | TWI249783B (de) |
WO (1) | WO2004014604A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
US6852173B2 (en) * | 2002-04-05 | 2005-02-08 | Boc, Inc. | Liquid-assisted cryogenic cleaning |
US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
US20060124155A1 (en) * | 2004-12-13 | 2006-06-15 | Suuronen David E | Technique for reducing backside particles |
JP4528677B2 (ja) | 2005-06-24 | 2010-08-18 | 株式会社東芝 | パターンド媒体の製造方法及び製造装置 |
JP4533809B2 (ja) | 2005-06-28 | 2010-09-01 | 株式会社東芝 | ディスクリートトラック媒体用基板の製造方法およびディスクリートトラック媒体の製造方法 |
US8252119B2 (en) * | 2008-08-20 | 2012-08-28 | Micron Technology, Inc. | Microelectronic substrate cleaning systems with polyelectrolyte and associated methods |
US8636913B2 (en) | 2011-12-21 | 2014-01-28 | HGST Netherlands B.V. | Removing residues in magnetic head fabrication |
DE102012204169A1 (de) * | 2012-03-16 | 2013-09-19 | Bayerische Motoren Werke Aktiengesellschaft | Verfahren und Vorrichtung zur maschinellen Reinigung |
SG195419A1 (en) * | 2012-06-05 | 2013-12-30 | Jcs Echigo Pte Ltd | Method and apparatus for cleaning articles |
JP2017011225A (ja) * | 2015-06-25 | 2017-01-12 | 株式会社フジミインコーポレーテッド | 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 |
US9687885B2 (en) * | 2015-07-17 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-cycle wafer cleaning method |
CN106711018B (zh) * | 2015-11-16 | 2019-12-10 | 兆远科技股份有限公司 | 半导体晶圆表面加工方法 |
CN108704879A (zh) * | 2018-04-08 | 2018-10-26 | 苏州珮凯科技有限公司 | 半导体8寸晶元制造Endura IMP工艺的不锈钢零部件再生方法 |
CN108672352A (zh) * | 2018-04-08 | 2018-10-19 | 苏州珮凯科技有限公司 | 半导体8寸晶圆制造薄膜制程的TiN工艺的Ti材质零部件再生方法 |
US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
CN111167791B (zh) * | 2020-01-10 | 2021-08-17 | 深圳仕上电子科技有限公司 | 有机蒸镀保护件的清洗方法 |
WO2022006008A1 (en) | 2020-06-29 | 2022-01-06 | Applied Materials, Inc. | Control of steam generation for chemical mechanical polishing |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196472A (ja) * | 1992-12-22 | 1994-07-15 | Soltec:Kk | ウェットエッチング方法及びウェット洗浄方法 |
US5582650A (en) * | 1995-01-13 | 1996-12-10 | International Paper Company | Process for cleaning parts soiled or encrusted with polyester resin |
WO1998014985A1 (en) * | 1996-09-30 | 1998-04-09 | Verteq, Inc. | Wafer cleaning system |
US6004400A (en) * | 1997-07-09 | 1999-12-21 | Phillip W. Bishop | Carbon dioxide cleaning process |
WO2000061306A1 (de) * | 1999-04-12 | 2000-10-19 | Steag Microtech Gmbh | Verfahren und vorrichtung zum reinigen von substraten |
US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4050954A (en) * | 1976-03-25 | 1977-09-27 | International Business Machines Corporation | Surface treatment of semiconductor substrates |
JPH02301138A (ja) * | 1989-05-16 | 1990-12-13 | Matsushita Electron Corp | 半導体ウェーハの洗浄装置および洗浄方法 |
US5315793A (en) * | 1991-10-01 | 1994-05-31 | Hughes Aircraft Company | System for precision cleaning by jet spray |
EP0647170B1 (de) * | 1992-06-22 | 2000-05-17 | Minnesota Mining And Manufacturing Company | Verfahren und vorrichtung zum entfernen von abfallstoffen von optischen floppy-disk-medien |
US5344494A (en) * | 1993-01-21 | 1994-09-06 | Smith & Nephew Richards, Inc. | Method for cleaning porous and roughened surfaces on medical implants |
US5354384A (en) * | 1993-04-30 | 1994-10-11 | Hughes Aircraft Company | Method for cleaning surface by heating and a stream of snow |
JP3351082B2 (ja) * | 1994-01-14 | 2002-11-25 | ソニー株式会社 | 基板乾燥方法と、基板乾燥槽と、ウェーハ洗浄装置および半導体装置の製造方法 |
US5651723A (en) * | 1994-04-13 | 1997-07-29 | Viratec Thin Films, Inc. | Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings |
DE19522525A1 (de) * | 1994-10-04 | 1996-04-11 | Kunze Concewitz Horst Dipl Phy | Verfahren und Vorrichtung zum Feinstreinigen von Oberflächen |
US5931721A (en) * | 1994-11-07 | 1999-08-03 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
US5967156A (en) * | 1994-11-07 | 1999-10-19 | Krytek Corporation | Processing a surface |
US5651834A (en) * | 1995-08-30 | 1997-07-29 | Lucent Technologies Inc. | Method and apparatus for CO2 cleaning with mitigated ESD |
US5853962A (en) * | 1996-10-04 | 1998-12-29 | Eco-Snow Systems, Inc. | Photoresist and redeposition removal using carbon dioxide jet spray |
US5922136A (en) * | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
US5961732A (en) * | 1997-06-11 | 1999-10-05 | Fsi International, Inc | Treating substrates by producing and controlling a cryogenic aerosol |
US5935869A (en) * | 1997-07-10 | 1999-08-10 | International Business Machines Corporation | Method of planarizing semiconductor wafers |
US5837662A (en) * | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
US5928434A (en) * | 1998-07-13 | 1999-07-27 | Ford Motor Company | Method of mitigating electrostatic charge during cleaning of electronic circuit boards |
CN1310860A (zh) * | 1999-03-30 | 2001-08-29 | 皇家菲利浦电子有限公司 | 半导体晶片清洗装置和方法 |
WO2000072363A1 (en) * | 1999-05-26 | 2000-11-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
KR20010089722A (ko) * | 1999-10-28 | 2001-10-08 | 롤페스 요하네스 게라투스 알베르투스 | 반도체 웨이퍼 세정 방법 및 장치 |
US6419566B1 (en) * | 2000-02-11 | 2002-07-16 | International Business Machines Corporation | System for cleaning contamination from magnetic recording media rows |
US6530823B1 (en) * | 2000-08-10 | 2003-03-11 | Nanoclean Technologies Inc | Methods for cleaning surfaces substantially free of contaminants |
US6425956B1 (en) * | 2001-01-05 | 2002-07-30 | International Business Machines Corporation | Process for removing chemical mechanical polishing residual slurry |
KR100421038B1 (ko) * | 2001-03-28 | 2004-03-03 | 삼성전자주식회사 | 표면으로부터 오염물을 제거하는 세정 장비 및 이를이용한 세정 방법 |
US6554909B1 (en) * | 2001-11-08 | 2003-04-29 | Saint-Gobain Ceramics & Plastics, Inc. | Process for cleaning components using cleaning media |
JP3958080B2 (ja) * | 2002-03-18 | 2007-08-15 | 東京エレクトロン株式会社 | プラズマ処理装置内の被洗浄部材の洗浄方法 |
US6852173B2 (en) * | 2002-04-05 | 2005-02-08 | Boc, Inc. | Liquid-assisted cryogenic cleaning |
WO2003086668A1 (en) * | 2002-04-05 | 2003-10-23 | Boc, Inc. | Fluid assisted cryogenic cleaning |
US6949145B2 (en) * | 2002-04-05 | 2005-09-27 | Boc, Inc. | Vapor-assisted cryogenic cleaning |
US20030221702A1 (en) * | 2002-05-28 | 2003-12-04 | Peebles Henry C. | Process for cleaning and repassivating semiconductor equipment parts |
US6764385B2 (en) * | 2002-07-29 | 2004-07-20 | Nanoclean Technologies, Inc. | Methods for resist stripping and cleaning surfaces substantially free of contaminants |
DE112010005734B4 (de) | 2010-07-13 | 2018-01-11 | Aisin Seiki Kabushiki Kaisha | Rohrleitungseinheit für eine Brennstoffzelle, mit Rohrleitungseinheit ausgestattete Brennstoffzelleneinheit und Brennstoffzellensystem |
-
2002
- 2002-08-09 US US10/215,859 patent/US20040029494A1/en not_active Abandoned
-
2003
- 2003-01-28 WO PCT/US2003/002643 patent/WO2004014604A1/en not_active Application Discontinuation
- 2003-01-28 KR KR1020057002096A patent/KR20050055699A/ko not_active Application Discontinuation
- 2003-01-28 CN CNB038194201A patent/CN100377836C/zh not_active Expired - Lifetime
- 2003-01-28 EP EP03708894A patent/EP1554081A4/de not_active Withdrawn
- 2003-01-28 AU AU2003212854A patent/AU2003212854A1/en not_active Abandoned
- 2003-05-02 JP JP2003127199A patent/JP3786651B2/ja not_active Expired - Lifetime
- 2003-05-16 TW TW092113357A patent/TWI249783B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196472A (ja) * | 1992-12-22 | 1994-07-15 | Soltec:Kk | ウェットエッチング方法及びウェット洗浄方法 |
US5582650A (en) * | 1995-01-13 | 1996-12-10 | International Paper Company | Process for cleaning parts soiled or encrusted with polyester resin |
WO1998014985A1 (en) * | 1996-09-30 | 1998-04-09 | Verteq, Inc. | Wafer cleaning system |
US6004400A (en) * | 1997-07-09 | 1999-12-21 | Phillip W. Bishop | Carbon dioxide cleaning process |
WO2000061306A1 (de) * | 1999-04-12 | 2000-10-19 | Steag Microtech Gmbh | Verfahren und vorrichtung zum reinigen von substraten |
US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
Non-Patent Citations (2)
Title |
---|
HOENIG S A ET AL: "USE OF DRY ICE AND VARIOUS SOLVENTS FOR REMOVING FLUX - CONTAMINANTS FROM PRINTED CIRCUIT BOARDS", PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, XX, XX, vol. 1847, 19 October 1992 (1992-10-19), pages 29 - 34, XP000921023 * |
See also references of WO2004014604A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN100377836C (zh) | 2008-04-02 |
US20040029494A1 (en) | 2004-02-12 |
KR20050055699A (ko) | 2005-06-13 |
JP2004079992A (ja) | 2004-03-11 |
WO2004014604A1 (en) | 2004-02-19 |
TW200405447A (en) | 2004-04-01 |
CN1675028A (zh) | 2005-09-28 |
AU2003212854A1 (en) | 2004-02-25 |
JP3786651B2 (ja) | 2006-06-14 |
EP1554081A1 (de) | 2005-07-20 |
TWI249783B (en) | 2006-02-21 |
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Ipc: H01L 21/02 20060101ALI20100415BHEP Ipc: B08B 3/08 20060101ALI20100415BHEP Ipc: B24B 1/00 20060101AFI20040301BHEP |
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