EP1554081A4 - Nettoyage post-cmp de la surface de tranches de semi-conducteurs par une combinaison de techniques aqueuses et cryogeniques - Google Patents

Nettoyage post-cmp de la surface de tranches de semi-conducteurs par une combinaison de techniques aqueuses et cryogeniques

Info

Publication number
EP1554081A4
EP1554081A4 EP03708894A EP03708894A EP1554081A4 EP 1554081 A4 EP1554081 A4 EP 1554081A4 EP 03708894 A EP03708894 A EP 03708894A EP 03708894 A EP03708894 A EP 03708894A EP 1554081 A4 EP1554081 A4 EP 1554081A4
Authority
EP
European Patent Office
Prior art keywords
cleaning
post
aqueous
combination
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03708894A
Other languages
German (de)
English (en)
Other versions
EP1554081A1 (fr
Inventor
Souvik Banerjee
Harlan Forrest Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RAVE N.P.
Original Assignee
BOC Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Inc filed Critical BOC Inc
Publication of EP1554081A1 publication Critical patent/EP1554081A1/fr
Publication of EP1554081A4 publication Critical patent/EP1554081A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
EP03708894A 2002-08-09 2003-01-28 Nettoyage post-cmp de la surface de tranches de semi-conducteurs par une combinaison de techniques aqueuses et cryogeniques Withdrawn EP1554081A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US215859 1988-07-06
US10/215,859 US20040029494A1 (en) 2002-08-09 2002-08-09 Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
PCT/US2003/002643 WO2004014604A1 (fr) 2002-08-09 2003-01-28 Nettoyage post-cmp de la surface de tranches de semi-conducteurs par une combinaison de techniques aqueuses et cryogeniques

Publications (2)

Publication Number Publication Date
EP1554081A1 EP1554081A1 (fr) 2005-07-20
EP1554081A4 true EP1554081A4 (fr) 2010-05-19

Family

ID=31494951

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03708894A Withdrawn EP1554081A4 (fr) 2002-08-09 2003-01-28 Nettoyage post-cmp de la surface de tranches de semi-conducteurs par une combinaison de techniques aqueuses et cryogeniques

Country Status (8)

Country Link
US (1) US20040029494A1 (fr)
EP (1) EP1554081A4 (fr)
JP (1) JP3786651B2 (fr)
KR (1) KR20050055699A (fr)
CN (1) CN100377836C (fr)
AU (1) AU2003212854A1 (fr)
TW (1) TWI249783B (fr)
WO (1) WO2004014604A1 (fr)

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US6852173B2 (en) * 2002-04-05 2005-02-08 Boc, Inc. Liquid-assisted cryogenic cleaning
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US20060124155A1 (en) * 2004-12-13 2006-06-15 Suuronen David E Technique for reducing backside particles
JP4528677B2 (ja) 2005-06-24 2010-08-18 株式会社東芝 パターンド媒体の製造方法及び製造装置
JP4533809B2 (ja) 2005-06-28 2010-09-01 株式会社東芝 ディスクリートトラック媒体用基板の製造方法およびディスクリートトラック媒体の製造方法
US8252119B2 (en) * 2008-08-20 2012-08-28 Micron Technology, Inc. Microelectronic substrate cleaning systems with polyelectrolyte and associated methods
US8636913B2 (en) 2011-12-21 2014-01-28 HGST Netherlands B.V. Removing residues in magnetic head fabrication
DE102012204169A1 (de) * 2012-03-16 2013-09-19 Bayerische Motoren Werke Aktiengesellschaft Verfahren und Vorrichtung zur maschinellen Reinigung
SG195419A1 (en) * 2012-06-05 2013-12-30 Jcs Echigo Pte Ltd Method and apparatus for cleaning articles
JP2017011225A (ja) * 2015-06-25 2017-01-12 株式会社フジミインコーポレーテッド 研磨方法及び不純物除去用組成物並びに基板及びその製造方法
US9687885B2 (en) * 2015-07-17 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-cycle wafer cleaning method
CN106711018B (zh) * 2015-11-16 2019-12-10 兆远科技股份有限公司 半导体晶圆表面加工方法
CN108704879A (zh) * 2018-04-08 2018-10-26 苏州珮凯科技有限公司 半导体8寸晶元制造Endura IMP工艺的不锈钢零部件再生方法
CN108672352A (zh) * 2018-04-08 2018-10-19 苏州珮凯科技有限公司 半导体8寸晶圆制造薄膜制程的TiN工艺的Ti材质零部件再生方法
US11633833B2 (en) 2019-05-29 2023-04-25 Applied Materials, Inc. Use of steam for pre-heating of CMP components
US11628478B2 (en) 2019-05-29 2023-04-18 Applied Materials, Inc. Steam cleaning of CMP components
TW202110575A (zh) 2019-05-29 2021-03-16 美商應用材料股份有限公司 用於化學機械研磨系統的蒸氣處置站
CN111167791B (zh) * 2020-01-10 2021-08-17 深圳仕上电子科技有限公司 有机蒸镀保护件的清洗方法
WO2022006008A1 (fr) 2020-06-29 2022-01-06 Applied Materials, Inc. Commande de génération de vapeur pour polissage mécano-chimique

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JPH06196472A (ja) * 1992-12-22 1994-07-15 Soltec:Kk ウェットエッチング方法及びウェット洗浄方法
US5582650A (en) * 1995-01-13 1996-12-10 International Paper Company Process for cleaning parts soiled or encrusted with polyester resin
WO1998014985A1 (fr) * 1996-09-30 1998-04-09 Verteq, Inc. Systeme de nettoyage de plaquettes
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
WO2000061306A1 (fr) * 1999-04-12 2000-10-19 Steag Microtech Gmbh Procede et dispositif de nettoyage de substrats
US6296716B1 (en) * 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles

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KR20010089722A (ko) * 1999-10-28 2001-10-08 롤페스 요하네스 게라투스 알베르투스 반도체 웨이퍼 세정 방법 및 장치
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US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
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* Cited by examiner, † Cited by third party
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JPH06196472A (ja) * 1992-12-22 1994-07-15 Soltec:Kk ウェットエッチング方法及びウェット洗浄方法
US5582650A (en) * 1995-01-13 1996-12-10 International Paper Company Process for cleaning parts soiled or encrusted with polyester resin
WO1998014985A1 (fr) * 1996-09-30 1998-04-09 Verteq, Inc. Systeme de nettoyage de plaquettes
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
WO2000061306A1 (fr) * 1999-04-12 2000-10-19 Steag Microtech Gmbh Procede et dispositif de nettoyage de substrats
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Non-Patent Citations (2)

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See also references of WO2004014604A1 *

Also Published As

Publication number Publication date
CN100377836C (zh) 2008-04-02
US20040029494A1 (en) 2004-02-12
KR20050055699A (ko) 2005-06-13
JP2004079992A (ja) 2004-03-11
WO2004014604A1 (fr) 2004-02-19
TW200405447A (en) 2004-04-01
CN1675028A (zh) 2005-09-28
AU2003212854A1 (en) 2004-02-25
JP3786651B2 (ja) 2006-06-14
EP1554081A1 (fr) 2005-07-20
TWI249783B (en) 2006-02-21

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