TWI249783B - Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques - Google Patents

Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques Download PDF

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TWI249783B
TWI249783B TW092113357A TW92113357A TWI249783B TW I249783 B TWI249783 B TW I249783B TW 092113357 A TW092113357 A TW 092113357A TW 92113357 A TW92113357 A TW 92113357A TW I249783 B TWI249783 B TW I249783B
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Taiwan
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cleaning
liquid
deionized water
wafer
contaminants
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TW092113357A
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Chinese (zh)
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TW200405447A (en
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Souvik Banerjee
Harlan Forrest Chung
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Boc Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Abstract

The present invention provides for a new and improved method of aqueous and cryogenic enhanced (ACE) cleaning for semiconductor surfaces as well as the surfaces of metals, dielectric films particularly hydrophobic low k dielectric films, and CMP etch stop films to remove post-CMP contaminants. It is particularly useful for removing contaminants which are 0.3 mum in size or smaller. The ACE cleaning process is applied to a surface which has undergone chemical-mechanical polishing (CMP). It includes the steps of cleaning the surface with an aqueous-based cleaning process, at least partially drying the surface, and, shortly thereafter, cleaning the surface with a CO2 cryogenic cleaning process. This process removes such contaminants from surfaces which are hydrophobic and hence difficult to clean with aqueous-based cleaning techniques alone.

Description

1249783 玖、發明說明： 【發明所屬之技術領域】 本發明係關於清潔半導體材料經化學機械研磨處理後之污染 物領域，尤其是關於使用結合水溶液及C〇2為主之低溫強化（ACE) 清潔技術以移除金屬及介電膜經化學機械研磨處理後的污染物。 【先前技術】 化學機械研磨（Chemical mechanical polishing ; CMP)係用於石夕 基材之裝置、光學元件及複合半導體為主之裝置製造過程中的金 屬及介電膜的整體平坦化。該CMP方法係在控制的壓力及溫度 下，及被稱為研磨漿（slurry)的化學物質存在時，在一濕研磨墊上 固定並轉動一半導體材料薄平基板；該研磨製包括各種微粒，如 Cerria、氧化鋁或矽膠，以及表面活性劑、姓刻劑及適於CMP方 法的其他添加劑。在CMP方法後，由研磨聚及其化學添加物和 反應副產物的微粒組成的污染物均留在晶圓表面，在進行1C製 造過程的任何其他步驟前，此類污染物必須移除，以避免降低裝 置的可靠性及使裝置產生缺陷；這些污染物的許多微粒均小於 0·3μιη 〇 用於移除後CMP污染物的傳統清潔技術，如結合超音波 (megasonics)及刷洗的水溶液化學清潔方法，不足以移除小尺寸的 污染物。傳統濕式技術使用液體流過晶圓表面來移除污染物，因 此，其效率受液流形成之邊界層的厚度限制；小於該邊界層的微 粒就被遮蔽不受該液流之物理拉力，因而仍留在晶圓表面；0.3μιη 以下研磨漿微粒上的凡得瓦（Van der Waals)力係離子雙層排斥 力，由濕式清潔技術中微粒與表面的zeta電位相似性產生，但不 足以充分地清潔晶圓表面。因此，使用該液流不能移除較小尺寸 的污染物。由於化學物質與氫鍵和額外產生的附著力，也使濕式 1249783 清潔技術之清潔能力進一步複雜化，並且大幅地降低了移除較小 尺寸污染物方法的效率。 超音波可與傳統濕式技術結合使用，以大幅降低邊界層的厚 度在1MHz，邊界層的厚度可減至ο.〗，但是，其仍不足以 有效移除由後CMP研磨漿組成的〇·3μπι以下尺寸的小微粒，因 此，污染物仍留在晶圓表面。 使用低k介電膜，如雙鑲嵌積體化中的含碳之氧化物 (carbon-doped oxides)或有機膜，進一步增加了僅使用水溶液為主 化學物質的後CMP清潔的難度。這些膜層以及CMp停止層，如 碳化矽、氮化矽及氧氮化矽疏水性很強，因此不能用水為主渴 清潔方法清潔。 ^ 因此，需要發明-種清潔技術，其能夠從半導體晶圓或其他金 屬或介電膜表面移除〇·3μηι以下齡的後⑽污染物，特別是 當要移除微粒的表面為疏水性時。 【發明内容】 本舍明^供-種新型並改良之清潔方法，其係可清潔半導體表 面及至屬〃私膜（斗寸別是低匕疏水介電膜）以及钱刻停止膜 表面，以移除後化學機械拋光（p勝CMp)污染物。 、 e本發明並提供-種方法，係用於從半導體、金屬、介電膜尤其 疋低k疏水介電膜及cmp |生刻彳盖止& 、"" ^ r 止朕表面以移除〇·3μιη大小或 更小的後化學機械研磨（CMp)污染物。 / 〜本，"Λ之曾ACE清潔方法包含一獨特之結合水與低溫清潔技 術’係從半導體、金屬或膜声而々 ^ 、 本發明μ _ ” =表㈣除小㈤物微粒。廣義而言， 人.接二-: 除污染物微粒之方法，其步驟包 、Ίί、過化學顧研磨（CMp)的表面，❹-水 清 >糸之方法清潔該表面，至少部 '' ，、毕0σ哀表面，之後，使用co2 1249783 =,潔方法«該表面。使用此—方法可移除表面包括 乂下小微粒及o._a下微粒的污染物微粒 · 水溶液為主«技術清潔的疏水性表面污染物。㈣難乂僅匕 【實施方式】 ' 圖係顯示織清潔方法之—般步_導此廳清潔 ,，亏:九it*:下列步驟用一水溶液為主之清潔液清潔存有CMp ::物的表面，視需要可使用超音波與/或洗刷，移除表面的大部 :Γ!用二t溫！潔方法清潔該表面。該水溶液清潔步驟最 子在低溫清潔步驟之前進行，以獲得最佳效果。 也可❹在業界廣為人知的標準濕式（水溶液）清潔方法。_ 年7月13曰核准的美國專利第5,922，136號揭露了該種方法的範 例。如-般範例，該濕式清潔方法之步驟主要包㈣去離子水清 洗半導體晶圓表面’使用-或多種水溶液為主，或以溶劑為主清 潔劑來清潔，之後再用去離子水清洗表面。若使用了—種以上水 溶液或溶劑為主之清㈣’可重複該#㈣，在每次使用清潔劑 之間也可進行清洗。該濕式（wet based)清潔方法包含使用可能含 有清潔劑的去離子水(DI)。而且，濕式清潔方法可結合超音波及/ 或刷洗，以進一步移除污染物微粒。 在说式清潔後，從晶圓表面移除大部分水，然後進行低溫清 潔；低溫清潔最好緊接在濕式清潔之後，以減少微粒黏接的可能 性。该ACE清潔方法中並可併入業界廣為人知的標準低溫清潔方 法1998年12月29日授予伊果思諾糸統公司（Ec〇-sn〇w Systems Inc)的美國專利第5,853,962號即說明了該等技術的一範例。併入 ACE清潔方法的該低溫清潔方法還可包含利用液體及/或蒸汽輔 助的新型低溫清潔技術。 C〇2低溫清潔技術之一範例為將於特定壓力（例如25。(：時 850psi)之液態C〇2從一特別設計之喷嘴擴張，液體的快速擴張使 1249783 壓力及溫度降低，因而在c〇2氣體流内形成固態co2雪狀微粒； 該固態及氣態c〇2流係直接喷射到晶圓表面，移除污染物。微粒 污染物的移除，係藉由低溫微粒的動量轉換克服晶圓表面污染物 微粒的附著力而移除。因微粒上的壓力造成低溫微粒與晶圓表面 之介面上形成一液態C〇2薄層，有機污染物薄膜可溶解於此一液 態co2薄層而被移除。 ACE清潔方法可應用於半導體晶圓及晶圓表面，但是並不僅 限於矽為主材料。CMP不僅用於矽基材為主的裝置的製造，也用 於光學元件製造及複合半導體為主的裝置的製造，而此ACE清潔 方法也可應用於從經過CMP處理的金屬表面及介電膜移除污染 物。本文使用術語「晶圓」或「晶圓表面」時表示也可使用其他 材料，本發明之方法可以類似方式應用於其他材料。 將ACE清潔方法併入了半導體行業已知的清潔技術。濕式或 水溶液清潔係清潔半導體晶圓表面之熟知方法，使用該方法係為 業界標準方法；但是，迄今為止，使用co2低溫清潔技術來清潔 半導體晶圓，從晶圚表面移除後CMP污染物，特別是移除0·3μπι 以下或甚至〇. lum以下的污染物微粒尚不為人知；使用結合水溶 液為主清潔方法，繼之以co2低溫清潔方法從晶圓表面移除後 CMP污染物微粒也還不為人知。結合水溶液為主清潔方法與C02 低溫清潔方法可移除所有後CMP污染物，包括較小尺寸的微粒； 濕式或水溶液為主的清潔不足以移除所有污染物，特別是較小尺 寸的微粒，也不足以移除疏水表面的污染物微粒；低溫清潔方法 單靠自身也不能移除所有CMP污染物。CMP中使用的添加劑包 括有機性的表面活性劑及腐蝕抑制劑，這些添加劑無法使用低溫 清潔移除，並且若其殘留在晶圓表面，還會阻礙低溫清潔移除微 粒。因此，低溫清潔與濕式清潔結合，是適合用於半導體行業從 移除晶圓表面後CMP污染物之理想清潔方法，此一發現讓人驚 1249783 喜；若與濕式清潔結合使用，低溫清潔即較單獨使用濕式清潔具 有更強移除晶圓表面上〇.3μιη以下小污染物微粒的能力，特別是 對難以清潔的疏水表面。 濕式清潔及低溫清潔方法均可分別併入各自技術熟知的步驟。在 此之前，其尚未結合用於移除晶圓表面污染物，低溫清潔尚未用 於半導體行業移除後CMP污染物。C02低溫清潔不依靠晶圓表面 的潤濕性，相反地，是依靠動量轉換，其甚至能移除低k疏水介 電膜上的CMP污染物，因此，此一清潔能力使低k銅整合方案 (copper-low々integrating scheme )能夠從傳統使用的技術節點擴 展至其他技術節點。1249783 玖, Invention Description: [Technical Field] The present invention relates to the field of contaminants after chemical mechanical polishing of clean semiconductor materials, in particular, the use of combined aqueous solution and C〇2-based low temperature strengthening (ACE) cleaning Techniques to remove contaminants from metal and dielectric films after chemical mechanical polishing. [Prior Art] Chemical mechanical polishing (CMP) is used for the overall planarization of metal and dielectric films in the fabrication of devices based on the substrate, optical components, and composite semiconductors. The CMP method fixes and rotates a thin flat substrate of a semiconductor material on a wet polishing pad under controlled pressure and temperature, and in the presence of a chemical called a slurry; the polishing system includes various particles, such as Cerria, alumina or silicone, as well as surfactants, surnames and other additives suitable for CMP processes. After the CMP process, contaminants consisting of particles that grind together with their chemical additives and reaction by-products remain on the wafer surface, and such contaminants must be removed before any other steps in the 1C manufacturing process. Avoid reducing the reliability of the device and causing defects in the device; many of these contaminants are less than 0.3 μm 传统 traditional cleaning techniques for removing post-CMP contaminants, such as chemical cleaning with megasonics and brushed aqueous solutions The method is not sufficient to remove small-sized contaminants. Conventional wet technology uses liquid to flow through the surface of the wafer to remove contaminants, so its efficiency is limited by the thickness of the boundary layer formed by the liquid flow; particles smaller than the boundary layer are shielded from the physical pull of the liquid flow, Therefore, it remains on the surface of the wafer; the Van der Waals force on the slurry particles below 0.3 μηη is based on the zeta potential similarity between the particles and the surface in the wet cleaning technique, but insufficient To adequately clean the wafer surface. Therefore, the use of this stream does not remove smaller sized contaminants. Due to the hydrogen bonding of the chemicals and the additional adhesion, the cleaning ability of the wet 1268973 cleaning technology is further complicated and the efficiency of the method of removing smaller size contaminants is greatly reduced. Ultrasonic waves can be combined with conventional wet technology to significantly reduce the thickness of the boundary layer at 1MHz, and the thickness of the boundary layer can be reduced to ο.〗, however, it is still not enough to effectively remove the 组成 consisting of the post-CMP slurry. Small particles of size below 3μπι, therefore, contaminants remain on the wafer surface. The use of low-k dielectric films, such as carbon-doped oxides or organic films in dual damascene integration, further increases the difficulty of post-CMP cleaning using only aqueous solutions as the primary chemical. These layers, as well as CMp stop layers, such as tantalum carbide, tantalum nitride, and niobium oxynitride, are highly hydrophobic and therefore cannot be cleaned by water. ^ Therefore, there is a need to invent a cleaning technique that is capable of removing post- (10) contaminants from the surface of semiconductor wafers or other metal or dielectric films, especially when the surface on which the particles are to be removed is hydrophobic. . SUMMARY OF THE INVENTION The present invention provides a novel and improved cleaning method for cleaning a semiconductor surface and to a smear film (a low-lying hydrophobic dielectric film) and a carbon film to stop the film surface. In addition to chemical mechanical polishing (p wins CMp) contaminants. The present invention provides a method for use in semiconductors, metals, dielectric films, especially low-k hydrophobic dielectric films, and cmp|scratch-capped &"" Post-Chemical Mechanical Abrasive (CMp) contaminants of 〇·3μιη size or smaller are removed. / 〜本, " Λ 曾 ACE ACE cleaning method contains a unique combination of water and low temperature cleaning technology 'from semiconductor, metal or film sound 々 ^, the invention μ _ ′ = table (four) in addition to small (five) particles. In other words, the person is connected to the second:: in addition to the method of contaminant particles, the steps of the package, Ίί, the surface of the chemical CMP (CMp), ❹-water clearing 糸 糸 method to clean the surface, at least '' After the completion of the surface, after using co2 1249783 =, clean method «the surface. Use this method to remove the surface of the particles including the small particles under the armpits and the particles under the o._a particles · aqueous solution mainly «Technical cleaning Hydrophobic surface contaminants. (4) Difficult to 乂 only [Embodiment] 'The figure shows the weaving method of cleaning - General step _ Guide this hall clean,, loss: nine it*: The following steps are cleaned with an aqueous solution-based cleaning solution The surface of the CMp: object can be used. Ultrasonic waves and/or scrubbing can be used as needed to remove most of the surface: Γ! Clean the surface with a two-degree temperature cleaning method. The aqueous cleaning step is most in the low temperature cleaning step. Execute beforehand to get the best results. A standard wet (aqueous) cleaning method is known in the art. An example of such a method is disclosed in U.S. Patent No. 5,922,136, the entire disclosure of which is incorporated herein by reference. Ionized water is used to clean the surface of the semiconductor wafer. Use - or a variety of aqueous solutions, or use a solvent-based cleaner to clean the surface. Then use deionized water to clean the surface. If more than one type of aqueous solution or solvent is used (4) The #(四) may be repeated and may be cleaned between each use of the cleaning agent. The wet based cleaning method involves the use of deionized water (DI) which may contain a cleaning agent. Moreover, the wet cleaning method may be combined. Ultrasonic and/or brushing to further remove contaminant particles. After cleaning, remove most of the water from the wafer surface and then perform low temperature cleaning; low temperature cleaning is best done after wet cleaning to reduce The possibility of particle adhesion. The ACE cleaning method can be incorporated into the industry's well-known standard cryogenic cleaning method issued to Ec〇-sn〇w Systems Inc. on December 29, 1998. An example of such techniques is illustrated in U.S. Patent No. 5,853,962. The cryogenic cleaning method incorporating the ACE cleaning method may also include a novel cryogenic cleaning technique that utilizes liquid and/or steam assistance. In order to expand a liquid C〇2 at a specific pressure (for example, 850 psi) from a specially designed nozzle, the rapid expansion of the liquid lowers the pressure and temperature of 12499738, thus forming a solid co2 snow in the c〇2 gas stream. The solid and gaseous c〇2 flow system is directly sprayed onto the surface of the wafer to remove contaminants. The removal of particulate contaminants overcomes the adhesion of contaminant particles on the wafer surface by momentum conversion of the low temperature particles. Remove. A thin layer of liquid C〇2 is formed on the interface between the low-temperature particles and the surface of the wafer due to the pressure on the particles, and the organic contaminant film can be dissolved in a thin layer of liquid CO2 to be removed. The ACE cleaning method can be applied to semiconductor wafers and wafer surfaces, but is not limited to germanium. CMP is not only used for the manufacture of germanium-based devices, but also for the manufacture of optical components and composite semiconductor-based devices. This ACE cleaning method can also be applied to CMP-treated metal surfaces and dielectric films. Remove contaminants. The use of the terms "wafer" or "wafer surface" herein means that other materials may be used as well, and the method of the present invention can be applied to other materials in a similar manner. The ACE cleaning method is incorporated into cleaning techniques known in the semiconductor industry. Wet or aqueous cleaning is a well-known method of cleaning the surface of semiconductor wafers, which is an industry standard method; however, to date, CMP contaminants have been cleaned from the wafer surface using co2 low temperature cleaning techniques to clean semiconductor wafers. In particular, remove the particles below 0·3μπι or even 〇. The contaminant particles below lum are not known; the combined cleaning method is used as the main cleaning method, followed by the co2 low temperature cleaning method to remove the CMP pollutant particles from the wafer surface. It is still unknown. Combined with aqueous solution as the primary cleaning method and CO2 low temperature cleaning method, all post CMP contaminants can be removed, including smaller sized particles; wet or aqueous based cleaning is not sufficient to remove all contaminants, especially smaller sized particles. It is also not sufficient to remove contaminant particles from hydrophobic surfaces; cryogenic cleaning methods alone cannot remove all CMP contaminants. Additives used in CMP include organic surfactants and corrosion inhibitors that cannot be removed with low temperature cleaning and, if left on the wafer surface, impede low temperature cleaning to remove the particles. Therefore, the combination of low-temperature cleaning and wet cleaning is an ideal cleaning method for CMP contaminants after removing the wafer surface in the semiconductor industry. This discovery is surprisingly 12,479,783; if combined with wet cleaning, low temperature cleaning That is, the use of wet cleaning alone has a stronger ability to remove small contaminant particles below 〇.3μηη on the wafer surface, especially for hydrophobic surfaces that are difficult to clean. Both wet cleaning and low temperature cleaning methods can be separately incorporated into steps well known in the art. Prior to this, it was not combined to remove wafer surface contaminants, and low temperature cleaning has not been used in the semiconductor industry to remove post-CMP contaminants. C02 low temperature cleaning does not depend on the wettability of the wafer surface. Instead, it relies on momentum conversion, which can even remove CMP contaminants on low-k hydrophobic dielectric films. Therefore, this cleaning capability enables low-k copper integration solutions. (copper-low々integrating scheme) can be extended from traditionally used technology nodes to other technology nodes.

ACE清潔方法併入水溶液為主與低溫清潔技術，可克服單獨 使用水溶液為主清潔技術面臨的主要問題：邊界層對有效移除晶 圓表面之0.3μπι以下甚至0· 1 μηι以下微粒的限制，及清潔疏水表 面的問題。該低溫清潔方法係依靠動量轉換起作用，其中以高速 到達晶圓表面的低溫微粒，藉由其衝擊力能夠克服污染物微粒的 附著力；一旦低溫微粒克服污染物微粒的附著力，C02氣體流的 拉力即可完全移除表面的污染物微粒。此一清潔方法不依靠潤濕 表面，因而不受表面或沈積於其上的薄膜之疏水/親水特性的限 制0 在低溫清潔過程中，流經晶圓表面的co2氣體也形成一邊界 層，但是，此一邊界層與水溶液邊界層影響不同，因為低溫清潔 中微粒移除的主要機制係動量轉換，而濕式清潔的係水力拉力。 co2低溫微粒必須穿越該邊界層以達到晶圓表面，在通過該層 時，由於作用其上的拉力，這些低溫微粒的速度下降，其下降速 度以鬆弛時間量測。鬆弛時間係低溫微粒速度下降至其初速度的 36%的時間，表示如下： τ=(2 r2 ρρ 〇/9η ιο 1249783 其中，r為低溫微粒的半徑，pp為低溫微粒的密度，Cc為 Cunningham 滑移校正因子（Cunningham slip correcti〇n fact〇r)，η 為介質黏度。上式表示，若介質黏度高，則鬆弛時間常數低，表 示該低溫微粒在經過該邊界層時受了較大拉力，使其到達晶圓表 面時的速度及動量下降較快；上式亦表明，較大的微粒可以較高 的速度及動量到達晶圓表面，以克服晶圓表面上污染物微粒的附 著力。一計算範例顯示，要移除由凡得瓦附著於於晶圓表面的 Ο.ίμιη污染物微粒，直徑大於12μηι的低溫微粒必須以大於i4m/s 的速度到達晶圓表面，一般的攻擊型噴嘴如Ec〇Sn〇wTM^潔工具 可，到該速度，能夠以至少14m/s的速度通過一 5〇μπι厚邊界層 的最小低溫微粒為〇·2μπι。前述範例顯示，邊界層不是移除小尺 寸U粒的限制目f ’因為移除小污染物微粒所需的低溫微粒的整 體尺寸分佈均可通過該叫氣體流經該晶圓表面時形成的該邊界 層。 實施例 濕式清潔方法The ACE cleaning method incorporates both aqueous and cryogenic cleaning techniques, overcoming the main problems faced by the use of aqueous solutions alone. The boundary layer is effective in removing particles below 0.3μπι or even below 0·1 μηι below the wafer surface. And the problem of cleaning the hydrophobic surface. The low-temperature cleaning method relies on momentum conversion, in which low-temperature particles reaching the surface of the wafer at a high speed can overcome the adhesion of the contaminant particles by the impact force; once the low-temperature particles overcome the adhesion of the contaminant particles, the CO 2 gas flow The tension can completely remove the contaminant particles from the surface. This cleaning method does not rely on the wetting surface and is therefore not limited by the hydrophobic/hydrophilic properties of the surface or the film deposited thereon. 0 During the low temperature cleaning process, the co2 gas flowing through the surface of the wafer also forms a boundary layer, but This boundary layer is different from the boundary layer of the aqueous solution because the main mechanism of particle removal in low temperature cleaning is momentum conversion, while the wet cleaning is hydraulic tension. The co2 low temperature particles must pass through the boundary layer to reach the surface of the wafer. When passing through the layer, the velocity of these low temperature particles decreases due to the tensile force acting thereon, and the rate of decrease is measured by the relaxation time. The relaxation time is the time when the low-temperature particle velocity drops to 36% of its initial velocity, which is expressed as follows: τ = (2 r2 ρρ 〇 / 9η ιο 1249783 where r is the radius of the low-temperature particles, pp is the density of the low-temperature particles, and Cc is Cunningham The slip correction factor (Cunningham slip correcti〇n fact〇r), η is the medium viscosity. The above formula indicates that if the medium viscosity is high, the relaxation time constant is low, indicating that the low temperature particles are subjected to a large pulling force when passing through the boundary layer. The speed and momentum decrease when it reaches the surface of the wafer. The above formula also shows that larger particles can reach the surface of the wafer at a higher speed and momentum to overcome the adhesion of contaminant particles on the surface of the wafer. A calculation example shows that to remove Ο.ίμιη contaminant particles attached to the surface of the wafer by Van der Waals, low temperature particles larger than 12μηι must reach the wafer surface at a speed greater than i4m/s. For example, the Ec〇Sn〇wTM cleaning tool can, at this speed, pass through a minimum of 50 μm μπ thick boundary layer at a speed of at least 14 m/s as 〇·2 μm. The foregoing example shows The boundary layer is not a limitation of removing small size U particles. The overall size distribution of the low temperature particles required to remove small contaminant particles can pass through the boundary layer formed when the gas flows through the surface of the wafer. Example wet cleaning method

氫氧化銨、過氧化氫及水的混合物， 剛有涿的步驟可應用於數 清洗。溶劑可為 JL業中普 ，包含但不限於SCbSCl 扮，混合比率的範圍一般 1249783 Π 1 · 1 r ”、、，…·至1:1:5 ;體積比為0 5%到2%的氫氧化銨水溶液；以 f :子水稀釋的氫氟酸濃度為〇·2至1·〇% ;適於後CMP清潔的 ，口 Μ，氧化劑（如過氧化氫）以及減少表面張力的表面活性劑。 心劑係根據待移除的污染物選擇。 、在清潔步驟中，通常使用超音波及/或PVA刷子刷洗，該技術 f業界所熱知，且業界所熟知的任何方法皆可以使用。以下是清 潔步驟的簡要制，當作可用方法之範例，但任何已知或標準技 術也都可使用。 超音波及刷洗技術 、皆；起日波μ ’糸，可使用批次清潔（batch cieaning)或單晶圓清 w方法。在超音波清潔槽内使用批次清潔方法，晶圓係垂直放置 内’超音波轉換器位於槽底；在單晶圓清潔,系統中，晶圓 係水平放置，一超音波棒（wand)掃過晶圓表面。超音波轉換器或 超音波棒的工作頻率約為8〇收112到13MHz，超音波轉換器或超 音波棒的振動導致黏性介質中之波衰減形成聲波，該聲波導致流 動波机及形成小氣穴泡沫，二者均有助於移除晶圓表面的微粒。 席J洗使用PVA刷，這類刷子由海綿狀軟材料製成，可壓性高。 刷子晶圓表面轉動，同時透過其核心導入清潔液體；刷子並不 接觸晶圓表面，而是水平懸置於晶圓表面上方，在刷子壓、推清 潔液體時透過水力拉力移動污染物微粒·，因此，晶圓表面應是親 水&的’使刷子能置於晶圓表面之上而又不接觸它。污染物微 粒但被移動彳交仍停留懸浮在液體中，直到藉由液流移除晶圓表 面0 烘乾表面 在 >然式清潔後，從晶圓表面移除大部分水，然後進行低溫清 潔。可將晶圓浸入酒精中移除大部分水，或用酒精噴灑晶圓同時 旋轉晶圓；若有需要時，可完全烘乾晶圓表面。 12 1249783 低溫清潔方法 低溫清潔最好緊接在濕式清潔之後的24小時内或更短時間内 進行，以減少微粒附著的可能性。標準低溫清潔方法在業界中廣 為人知’並可併入ACE清潔方法中。1998年12月29日授予伊 果思諾系統公司（Eco-Snow Systems Inc)的美國專利第5,853,962 5虎火明了该技術的一範例。 第一圖係％員示典型清潔系統之一範例。該清潔容器1 2提供一 超潔淨、封閉或密封清潔區；在該清潔區内，晶圓1係由真空固 定於一台板2。台板2與晶圓1保持於最高1〇〇〇c的控制溫度下； 在室溫及850Psi壓力下，一氣缸内的液態c〇2首先通過一燒結同 =過濾器4從液態氣流中過濾出非常小的微粒，使二氧化碳盡可 能純，減少氣流中的污染物；然後使該液態eh透過一小孔噴嘴 ^張^嘴直徑最好為·，至G15”；液體的快速擴張使溫度下 IV ,攸而在广母分鐘約i到3立方英尺的速度流動之氣態流 中幵v成固怨co2雪狀微粒；該固態及氣態c〇2流係以約到⑼ 度1角度（取好為約45度）流向晶圓表面；前述之喷嘴最好位於沿 的至晶圓視線約〇·375”至〇·5”的位置。在清潔過程中，台板2 在軌運9上沿丫軸方向前後移動，同時該清潔噴嘴的臂在執道1〇 f =方向線性移動，這導致晶圓表面上產生—柵格形清潔圖 二：Γ進大小及掃描速度均可按需要預先設定。並且清潔室的 保持盡可能低，例如<膏c露點。低濕度可防止清料 主工二在晶圓表面凝結及結冰，其可能因在污染物 :面=成結晶橋(c_Une brid㈣而增加二的J 由使用氮或乾淨乾空氣流保持低濕度。清潔室内伴： 的靜電電荷，因此，在整個清，之摩擦生電產生 持中和报重要，係可由雙極潔室内的靜電電荷保 私軍離子棒5執行。此系統還具有一 1249783 舒喷嘴直接安裝於該c〇2噴嘴後，以增強安裝於一電接地台板上 的日日圓的電荷中和作用。 對於微粒污染物，該移除機制主要係c〇2低溫微粒的動量轉 換，服晶圓表面污染物微粒的附著力，—旦該等微粒「鬆他」「 氣L C〇2的拉力就可將其從晶圓表面移除。有機膜污染物的清潔 機制係藉由低溫co2對晶圓表面的衝擊壓力在有機污染物與晶圓 ; 表面之間的介面上形成一層薄c〇2液體，之後，該⑶2液體可溶 - 解該有機污染物，並將之帶離晶圓表面。 W夜體辅助低溫方法中，係使用具有高蒸汽壓力的一液體在低 溫清潔中或此步驟之前噴灑於晶圓表面，前述之液體包含異Θ零 醇、乙醇、丙酮、體積比為50%的乙醇-丙酮混合液、甲醇、/甲酸 甲酯、碘甲烷及溴乙烷，2002彳4月5日提出的美國專利第 60/369,853號中請案更詳細地說明了該種方法，並經引用併入本 =。珂述液體可於晶圓表面噴灑成一薄層，用於移除微粒，或於 曰=圓表面噴灑成較厚的膜，在被低溫噴灑推壓時產生額外的拉力 移除該等微粒。前職體可使用任何標準裝置倾，如濕式清洗 =上用於向晶圓表面噴灑去離子水的聚四氟乙烯（Tefi〇n)喷霧噴 觜此外’如2002年4月5日申請的美國專利第6〇/369,852號 · 申> 請案（經引用併入本文）說明的蒸汽辅助低溫清潔一樣，液體白勺^ 洛汽可能凝結於晶圓表面，最好用該液體覆蓋該晶圓十分鐘；可 嘴2 —層液體覆蓋或可反覆噴灑多層液體覆蓋晶圓以確保晶圓 保持濕潤；在前述覆蓋時間後，即開始C02低溫噴灑（使用前述標 · 準技術）藉由減少介入媒介組成的Hammaker常數，該液體減少 - 了晶圓表面微粒污染物的附著力，因此，co2低溫微粒可較容易 地移動晶圓表面的污染物。 14 1249783 【圖式簡單說明】 第一圖係顯示先前技術及本發明ACE技術之一般方法的流 圖〇 第二圖係顯示在C〇2低溫清潔方法中使用的_ 【主要元件符號對照說明】 又衣置流裎圖。 1 ^ 晶圓 2 % 台板 3 % 噴嘴 燒結同轴過濾器A mixture of ammonium hydroxide, hydrogen peroxide and water can be applied to several cleaning steps. The solvent may be JL, including but not limited to SCbSCl, and the mixing ratio is generally 1249783 Π 1 · 1 r ”, , ..., to 1:1:5; the volume ratio is 0 5% to 2% hydrogen. Ammonium oxide aqueous solution; hydrofluoric acid diluted with f: sub-water at a concentration of 〇·2 to 1·〇%; suitable for post-CMP cleaning, hydrazine, oxidant (such as hydrogen peroxide) and surface tension reducing surfactant The heart is selected according to the contaminants to be removed. In the cleaning step, ultrasonic and/or PVA brushes are usually used for brushing. This technique is well known in the art and can be used by any method known in the art. It is a brief description of the cleaning procedure and can be used as an example of the available methods, but any known or standard technology can also be used. Ultrasonic and brushing techniques, all; day wave μ '糸, batch cieaning can be used Or a single wafer cleaning method. The batch cleaning method is used in the ultrasonic cleaning bath, the wafer is placed vertically in the 'ultrasonic converter at the bottom of the groove; in the single wafer cleaning, the system is placed horizontally, An ultrasonic rod (wand) sweeps across the surface of the wafer. The wave transducer or ultrasonic bar operates at a frequency of about 8 to 112 MHz. The vibration of the ultrasonic transducer or ultrasonic bar causes the wave in the viscous medium to attenuate to form an acoustic wave, which causes the wave machine and the formation of small air pockets. Foam, both of which help to remove particles from the surface of the wafer. The J Wash uses a PVA brush, which is made of a sponge-like soft material and has high compressibility. The surface of the brush is rotated while being introduced through its core. Cleaning the liquid; the brush does not touch the surface of the wafer, but is suspended horizontally above the surface of the wafer. When the brush presses and pushes the cleaning liquid, it moves the contaminant particles through the hydraulic pulling force. Therefore, the surface of the wafer should be hydrophilic & 'Making the brush on the surface of the wafer without touching it. The contaminant particles are still suspended in the liquid while being moved, until the wafer surface is removed by the liquid flow. 0 Dry the surface in > After cleaning, remove most of the water from the surface of the wafer and then perform low temperature cleaning. The wafer can be immersed in alcohol to remove most of the water, or the wafer can be sprayed with alcohol while rotating the wafer; if necessary, it can be completely Dry wafer surface 12 1249783 Low temperature cleaning method Low temperature cleaning is best done within 24 hours or less immediately after wet cleaning to reduce the possibility of particle adhesion. Standard low temperature cleaning methods are well known in the industry' It can be incorporated into the ACE cleaning method. An example of this technology is shown in U.S. Patent No. 5,853,962 issued to Eco-Snow Systems Inc. on December 29, 1998. An example of a typical cleaning system. The cleaning container 12 provides an ultra-clean, enclosed or sealed cleaning zone in which the wafer 1 is vacuum-fixed to a plate 2. The platen 2 is held with the wafer 1 At a temperature of up to 1 °c; at room temperature and 850 Psi, the liquid c〇2 in a cylinder is first filtered through a sintering and filter 4 from the liquid stream to remove very small particles, making carbon dioxide As pure as possible, reduce the pollutants in the airflow; then let the liquid eh pass through a small hole nozzle, the diameter of the nozzle is preferably ·, to G15"; the rapid expansion of the liquid makes the temperature IV, and in the wide mother minute About i to 3 The velocity of the flow of the foot is in the gaseous flow, and the solid and gaseous c〇2 flow is directed to the wafer surface at an angle of about (9) degrees 1 (taken about 45 degrees); It is best to be located along the line of sight of the wafer from approximately 375·375” to 〇·5”. During the cleaning process, the platen 2 moves back and forth along the x-axis direction on the rail 9 while the arm of the cleaning nozzle moves linearly in the direction of 1〇f =, which results in a grid-like cleaning diagram on the wafer surface. Two: The size and scanning speed can be preset as needed. And keep the clean room as low as possible, for example < cream c dew point. Low humidity prevents the cleaning agent from condensing and freezing on the wafer surface, which may be due to the increase in the contaminant: surface = crystal bridge (c_Une brid (4). The use of nitrogen or clean dry air flow to maintain low humidity. Clean the room with: The electrostatic charge, therefore, in the whole clear, the friction generated by the electricity generation is important, can be carried out by the electrostatic charge of the bipolar clean room in the military ion bar 5. This system also has a 1278973 Shu nozzle Directly mounted on the c〇2 nozzle to enhance the charge neutralization of the sun circle mounted on an electric ground plate. For particulate contaminants, the removal mechanism is mainly the momentum conversion of c〇2 low temperature particles. The adhesion of contaminant particles on the surface of the wafer—the particles “loose” and “the pulling force of the gas LC〇2” can be removed from the wafer surface. The cleaning mechanism of organic film contaminants is by low temperature co2 The impact pressure on the surface of the wafer forms a thin c〇2 liquid on the interface between the organic contaminant and the wafer; the surface, after which the liquid can dissolve the organic contaminant and carry it away from the wafer surface. W night body assisted low In the method, a liquid having a high vapor pressure is sprayed on the surface of the wafer during low temperature cleaning or before the step, and the liquid comprises isodecyl alcohol, ethanol, acetone, and an ethanol-acetone mixture having a volume ratio of 50%. , methanol, /methyl formate, methyl iodide and ethyl bromide, which are described in more detail in the application of U.S. Patent No. 60/369,853, issued Apr. 5, the entire disclosure of which is incorporated herein by reference. The liquid can be sprayed on the surface of the wafer as a thin layer for removing particles, or sprayed into a thicker film on the surface of the 曰= round surface, which generates additional tensile force when pressed by low temperature spray to remove the particles. The body can be tilted using any standard device, such as wet cleaning = Tefi〇n spray sneeze used to spray deionized water onto the surface of the wafer. In addition, as applied on April 5, 2002. U.S. Patent No. 6/369,852, the application of which is incorporated herein by reference, for the purpose of the steam-assisted low-temperature cleaning, the liquid may be condensed on the surface of the wafer, preferably covered with the liquid. Round for ten minutes; mouth 2 - layer liquid covered or Spraying a multi-layer liquid-covered wafer to ensure that the wafer remains wet; after the aforementioned cover time, C02 low-temperature spraying (using the aforementioned standard technology) is achieved by reducing the Hammaker constant of the intervening medium composition. Adhesion of surface particulate contaminants, therefore, co2 low temperature particles can easily move contaminants on the wafer surface. 14 1249783 [Simplified Schematic] The first figure shows the flow of the prior art and the general method of the ACE technology of the present invention. Figure 2 is a diagram showing the use of the C〇2 low-temperature cleaning method. [Main component symbol comparison description] A garment placement flow diagram. 1 ^ Wafer 2% platen 3% nozzle sintered coaxial filter

^ ^雙極電暈離子棒 超向欵率濾網（Ulpa filter) % 轨道 1()%轨道 12 %清洗容器^ ^Bipolar Corona Ion Bar Ultra-Yellow Filter (Ulpa filter) % Track 1 ()% Track 12% Cleaning Container

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Claims (1)

1249783 拾 申請專利範圍： 矛夕除化學機械研磨(CMP)污染 種用於從半導體晶圓、金屬或薄膜表面 物的方法，係包含下列步驟： a) 用去離子水及/或-水溶液或溶劑為主清潔劑濕式清潔該表面； b) 至少部分烘乾該表面；及 匀用C02低溫清潔該表面。 2.如申請專利範圍第i項所述之方法，其t前述表面係藉由移除大部分水1249783 Patent application scope: The method of chemical mechanical polishing (CMP) contamination for semiconductor wafer, metal or film surface includes the following steps: a) using deionized water and / or - aqueous solution or solvent The surface is wet cleaned with a primary cleaner; b) at least partially dried the surface; and the surface is cleaned at a low temperature with CO 2 . 2. The method of claim i, wherein the surface is removed by removing most of the water 而部分烘乾。 3·如申請專利範圍第1項所述之方法，其中前述表面實質上是乾的。 4.如申請專利範圍第1項所述之方法，其中前述步驟⑷係包含下列步驟： 用去離子水清洗該表面，用一水溶液或溶劑為主的清潔劑清潔該表面， 及再用去離子水清洗該表面。And partially dried. 3. The method of claim 1, wherein the surface is substantially dry. 4. The method of claim 1, wherein the step (4) comprises the steps of: washing the surface with deionized water, cleaning the surface with an aqueous solution or a solvent-based cleaning agent, and further deionizing the surface. Water washes the surface. 5·如申請專利範圍第4項所述之方法，其中前述步驟(a)進一步包含重複下 列步驟：用一或多種水溶液或溶劑為主清的潔劑清潔該表面，及用去離 子水清洗該表面。 6·如申請專利範圍第1項所述之方法，其中前述步驟(a)包含用去離子水及 /或一水溶液或溶劑為主的清潔劑研磨該表面。 7·如申請專利範圍第1項所述之方法，其中前述步驟(c)包含下列步驟：透 過一噴嘴用壓力擴張C02液體使其在一 C02氣體流中形成固態co2， 益將該C02氣體流導向該表面以移除污染物。 16 1249783 8·如申請專利範圍第2項所述之方法 _ . ，、令則述部分烘乾該表面係藉由將 或藉 表面浸入—酒精並將該表面緩慢移出該酒精而移除大部分的水， 由向該表面她精時旋轉該表面而移除大部分的水。 9.如申請專利範圍第7項所述之，、 ^ /〜中兩述步驟(c)係在使用一具有高 蒸汽壓力的液體噴灑該表面的、， 留在該表面上 知之則，亚在一段所需時間内讓該液體 10·如申請專利範圍第7項所述 , 、 方法’其中前述步驟(c)係在使用一液體蒸 汽覆蓋該表邮齡該雜麵崎力師驟之前，並在—段所需時間 内讓該蒸汽留在該表面。 11. -種驗從半導體⑽、金屬或薄驗面移除由後化學機械研磨處理所 產生的尺寸為0·3μηι或更小之污染物的方法包含下列步驟： a)濕式清潔該表面’係包含用去離子水清潔該表面，在去離子水 中用水洛液為主的清潔劑清潔該表面，或用去離子水及/或水溶液 清潔劑研磨該表面； b) 藉由移除大部分水至少部分烘乾該表面；及 c) 用C〇2低溫清潔該表面，係包含下列步驟：透過一喷嘴用壓力 擴張c〇2液體以在一氣態c〇2流中形成固態c〇2，並將該c〇2流導 向該表面以移除污染物。 12 •如申凊專利範圍第11項所述之方法，其中前述表面全部是乾的。 17 1249783 13. 如申請專利範圍第11項所述之方法，其中前述步驟(a)係包含下列步 驟：用去離子水清洗該表面，用一水溶液為主的清潔劑清潔該表面，及 再用去離子水清洗該表面。 14. 如申請專利範圍第11項所述之方法，其中前述步驟(c)係在使用一具有 高蒸汽壓力的液體喷灑該表面的步驟之前，並在一段所需時間内讓該液 體留在該表面。 15. 如申請專利範圍第11項所述之方法，其中前述步驟(c)係在使用一具有 高蒸汽壓力之液體蒸汽覆蓋該表面以減少該微粒表面附著力的步驟之 前，並在一段所需時間内讓該蒸汽留在該表面。 185. The method of claim 4, wherein the step (a) further comprises the step of: cleaning the surface with one or more aqueous solutions or solvents as the main cleaning agent, and washing the surface with deionized water. surface. 6. The method of claim 1, wherein the step (a) comprises grinding the surface with deionized water and/or an aqueous solution or solvent based cleaning agent. 7. The method of claim 1, wherein the step (c) comprises the steps of: expanding the CO 2 liquid through a nozzle to form a solid CO2 in a CO 2 gas stream, thereby benefiting the CO 2 gas stream The surface is directed to remove contaminants. 16 1249783 8 · The method of claim 2, wherein the method of drying the surface is to remove most of the surface by immersing or immersing the surface in the alcohol and slowly removing the surface from the alcohol. The water, by rotating the surface to the surface she removes most of the water. 9. As described in item 7 of the patent application, step (c) of the two parts of (^) is sprayed on the surface using a liquid having a high vapor pressure, and is left on the surface. The liquid 10 is provided for a period of time as described in claim 7 of the patent application, wherein the method (c) is preceded by using a liquid vapor to cover the surface of the watch, and Leave the steam on the surface for the required period of time. 11. - A method for removing contaminants of size 0. 3 μηι or less produced by post-chemical mechanical polishing treatment from a semiconductor (10), metal or thin facet comprises the following steps: a) Wet cleaning the surface' Include cleaning the surface with deionized water, cleaning the surface with a detergent based on water in deionized water, or grinding the surface with deionized water and/or aqueous detergent; b) by removing most of the water At least partially drying the surface; and c) cleaning the surface with C〇2 at a low temperature, comprising the steps of: expanding a c〇2 liquid through a nozzle to form a solid c〇2 in a gaseous c〇2 stream, and The c〇2 stream is directed to the surface to remove contaminants. The method of claim 11, wherein the aforementioned surface is all dry. The method of claim 11, wherein the step (a) comprises the steps of: washing the surface with deionized water, cleaning the surface with an aqueous solution-based cleaning agent, and reusing the surface. The surface is washed with deionized water. 14. The method of claim 11, wherein the step (c) is preceded by the step of spraying the surface with a liquid having a high vapor pressure, and leaving the liquid in a desired period of time. The surface. 15. The method of claim 11, wherein the step (c) is preceded by the step of covering the surface with a liquid vapor having a high vapor pressure to reduce the adhesion of the surface of the particle, and Leave the steam on the surface for a period of time. 18
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