WO2004014604A1 - Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques - Google Patents
Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques Download PDFInfo
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- WO2004014604A1 WO2004014604A1 PCT/US2003/002643 US0302643W WO2004014604A1 WO 2004014604 A1 WO2004014604 A1 WO 2004014604A1 US 0302643 W US0302643 W US 0302643W WO 2004014604 A1 WO2004014604 A1 WO 2004014604A1
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- Prior art keywords
- cleaning
- aqueous
- contaminants
- cryogenic
- steps
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- 238000004140 cleaning Methods 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000000356 contaminant Substances 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 28
- 239000008367 deionised water Substances 0.000 claims description 17
- 229910021641 deionized water Inorganic materials 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 abstract description 8
- 150000002739 metals Chemical class 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 75
- 239000002245 particle Substances 0.000 description 64
- 229910002092 carbon dioxide Inorganic materials 0.000 description 28
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 25
- 239000010408 film Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 3
- 230000005661 hydrophobic surface Effects 0.000 description 3
- 238000005201 scrubbing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- -1 etchants Substances 0.000 description 1
- XTLNYNMNUCLWEZ-UHFFFAOYSA-N ethanol;propan-2-one Chemical compound CCO.CC(C)=O XTLNYNMNUCLWEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- the present invention relates to the field of cleaning contaminants from post- chemical mechanical polishing of semiconductor materials and, in particular, to the removal of contaminants after chemical mechanical polishing of metals and dielectric films using a combination of aqueous-based and cryogenic enhanced (ACE) cleaning technologies.
- ACE cryogenic enhanced
- CMP Chemical mechanical polishing
- the CMP process involves holding and rotating a thin, flat substrate of the semiconductor material against a wetted polishing pad under controlled pressure and temperature in the presence of chemicals known as slurries.
- the slurry contains particles such as Cerria, alumina, or fumed or colloidal silica, along with surfactants, etchants, and other additives as appropriate to the CMP process.
- contaminants consisting of particles from the polishing slurry, chemicals added to the slurry, and reaction by-products of the polishing slurry are left behind on the wafer surface.
- the Nan der Waals force on sub-O.3 ⁇ m slurry particles is such that ionic double layer repulsion, brought about by the similarity of the zeta potential of particles and surfaces in wet cleaning, is not sufficient to adequately clean the wafer of particles and surfaces in wet cleaning, is not sufficient to adequately clean the wafer surface.
- the fluid flow does not remove these smaller sized contaminants. Additional adhesion, due to chemical and hydrogen bonding, further complicates the cleaning capabilities of wet cleaning techniques and significantly reduces the efficiency of these processes for removing smaller sized contaminants.
- the boundary layer may be decreased in thickness to 0.5 ⁇ m at 1 MHz. However, it is still not sufficient to efficiently remove these small sub-0.3 ⁇ m sized particles of which post-CMP slurry is composed. As such, these contaminants remain on the wafer surface.
- low k dielectric films such as carbon-doped oxides or organic films in dual damascene integration has added a further challenge to the post-CMP cleaning in which only aqueous-based chemistries are used.
- the present invention provides for a new and improved method of cleaning semiconductor surfaces as well as the surfaces of metals, dielectric films particularly hydrophobic low k dielectric films, and CMP etch stop films to remove post-CMP contaminants.
- the present invention also provides for a process for the removal of post-chemical mechanical polishing (CMP) contaminants from the surface of semiconductors, metals, dielectric films particularly hydroph.obic low k dielectric films, and CMP etch stop films where such contaminants are 0.3 ⁇ in size or smaller.
- CMP post-chemical mechanical polishing
- the ACE cleaning process of the present invention comprises a unique combination of aqueous and cryogenic cleaning to remove these small contaminant particles from the surface of the semiconductor, metal, or film.
- the present invention comprises a process for cleaning such surfaces to remove contaminant particles wherein the process includes the steps Qf providing a surface which has undergone chemical-mechanical polishing (CMP), cleaning the surface with an aqueous-based cleaning process, at least partially drying the surface, and, shortly thereafter, cleaning the surface with a CO 2 cryogenic cleaning process.
- CMP chemical-mechanical polishing
- contaminant particles including small sub-0.3 ⁇ m particles as well as sub-0.1 ⁇ m particles are removed from the surface.
- the present invention also removes such contaminants from surfaces which are hydrophobic and hence difficult to clean with aqueous-based cleaning techniques alone.
- FIGURES Figure 1 is a flow chart outlining the general steps of the prior art as well as the process of the present invention.
- Figure 2 is a flow chart outlining the general apparatus used in CO 2 cryogenic cleaning.
- the ACE cleaning process comprises the steps of cleaning the surface having CMP contaminants with an aqueous-based cleaning solution, optionally using megasonics and/or brushing, removing the bulk water from the surface, and cleaning the surface with a CO 2 cryogenic cleaning process.
- the step of aqueous cleaning preferably occurs prior to the step of cryogenic cleaning to obtain the best results.
- Standard wet (aqueous) cleaning processes are well known in the industry and these may be used.
- An example of such a process is described in U.S. Patent No. 5,922,136 which issued to patent on July 13, 1999.
- the wet cleaning process consists broadly of the steps of rinsing the semiconductor wafer surface with deionized water, using one or more aqueous-based or solvent-based cleaners, and re- rinsing the surface with deionized water. These steps may be repeated where more than one aqueous or solvent based cleaner is used and rinsing would occur between each use of cleaner.
- the wet based cleaning comprises the use of deionized (DI) water which may also include cleaning agents. Further, the wet based cleaning process may incorporate megasonics and/or brush scrubbing to further remove contaminant particles.
- DI deionized
- cryogenic cleaning occurs shortly after the wet cleaning to reduce the possibility of particle . adhesion.
- Standard cryogenic cleaning processes are well known in the industry and may be incorporated into the ACE cleaning process. An example of these techniques is described in U.S. Patent No. 5,853,962 issued December 29, 1998 to Eco-Snow Systems Ltic The cryogenic cleaning process incorporated into the ACE cleaning process may also include newer forms of cryogenic cleaning utilizing liquid and/or vapour assistance.
- liquid CO 2 under pressure (for example, at 850 psi and 25°C) is expanded through a specially designed nozzle.
- the rapid expansion of the liquid causes the pressure and temperature to drop resulting in the formation of solid CO 2 snow particles entrained in a gaseous C0 2 stream.
- the stream of solid and gaseous CO 2 is directed at the wafer surface removing the contaminants.
- Particulate contaminants are removed by momentum transfer by the cryogenic particles overcoming the force of adhesion of the contaminant particles on the wafer surface.
- Thin films of organic contaminants are removed by the dissolution of the film in liquid CO 2 formed at the interface of the cryogenic particles and the wafer surface due to the pressure on the particles.
- the ACE cleaning process may be applied to semiconductor wafers and wafer surfaces but is not limited to silicon based materials only. CMP is used in the fabrication of not only silicon based devices but also in optics fabrication, and compound semiconductor-based device fabrication.
- the ACE cleaning process may also be used to remove contaminants from metal surfaces and dielectric films which have undergone CMP. Whenever the terms "wafer” or "wafer surface” are used herein, it is intended that these other materials may also be used and that the process of the present invention may be applied to them in a similar manner.
- the ACE cleaning process incorporates cleaning techniques known in the semiconductor industry. Wet or aqueous cleaning is a well known method for cleaning semiconductor wafer surfaces. Its use is standard in the industry.
- Cryogenic cleaning by itself will also not remove all CMP contaminants.
- Additives used in CMP include surfactants and corrosion inhibitors which are organic in nature. These additives will not be removed with cryogenic cleaning and will impede the particle removal by cryogenic cleaning if left on the wafer surface. It has therefore been surprisingly found that cryogenic cleaning along with wet cleaning is suitable and desirable for use in the semiconductor industry to remove post-CMP contaminants from wafer surfaces and, when used in combination with wet cleaning, provides for the enhanced removal of these small sub-0.3 ⁇ m contaminants from the wafer surface, especially hard to clean hydrophobic surfaces, than that obtained through the use of wet cleaning alone.
- Each of the wet and cryogenic cleaning processes may incorporate steps ell- known in their respective art. They have not however, prior to this, been used in combination to remove contaminants from wafer surfaces and cryogenic cleaning has not been used in the semiconductor industry to remove post-CMP contaminants. CO 2 cryogenic cleaning does not depend on the wetting of the wafer surface but, rather, on momentum transfer. Hence, it is able to remove CMP contaminants even from hydrophobic low k dielectric films. This, therefore, enables the copper-low k integration scheme to be extended to further technology nodes from those in which it is traditionally used.
- the ACE cleaning process combines aqueous-based and cryogenic cleaning technologies to overcome the major problems faced with the use of aqueous-based cleaning technologies alone: the limitation of the boundary layer in effectively removing sub-0.3 ⁇ m particles, or even sub-0.1 ⁇ m particles, from the wafer surface, and cleaning hydrophobic surfaces.
- the cryogenic cleaning process works by momentum transfer wherein the cryogenic particles arriving at high velocities on the wafer surface are able to overcome the force of adhesion of the contaminant particles by their impact. Once the particles have overcome their force of adhesion, the drag force due to the gaseous CO 2 flow removes the particles completely off the surface.
- the cleaning does not depend on wetting the surface and hence is not limited by the hydrophobic/hydrophilic properties of the surface or a film deposited on it.
- cryogenic cleaning there is .also a boundary layer formed due to the flow of the C0 2 gas over the wafer surface.
- the boundary layer manifests itself differently since the major mechanism of particle removal in cryogenic cleaning is momentum transfer as compared to hydrodynamic drag in wet cleaning.
- cryogenic particles have to cross this boundary layer to arrive at the wafer surface. During their passage through this layer, the velocity of the cryogenic particles decreases due to the drag force on them. The decrease in velocity of the cryogenic particles is measured in terms of its relaxation time.
- r is the radius of the cryogenic particle
- p P is the cryogenic particle density
- C c is the Cunningham slip correction factor
- ⁇ is the viscosity of the medium.
- cryogenic particles larger than 1.2 ⁇ m in diameter must arrive at the wafer surface with a velocity greater than 14 m/s. This velocity is achievable with typical aggressive nozzles such as an EcoSnowTM cleaning tool.
- the wafer is placed in a flowing water bath and rinsed for up to one minute with deionized water. Aqueous-based cleaners are then applied to the wafer for up to approximately two minutes to clean it. After this step, the wafer is rinsed again in a flowing water bath with deionized water for approximately one minute. It is then dried in a spin rinse dryer at approximately 1500 rpm for approximately three minutes.
- solvents include any of those solvents generally used in the industry to clean contaminants from wafer surfaces. These include but are not limited to SCI, which is a combination of ammonium hydroxide, hydrogen peroxide, and water generally mixed at a ratio in the range of from 0.2:1:5 to 1:1 :5; a solution of 0.5%-2% by volume ammonium hydroxide in water; dilute hydrofluoric acid in deionized water of concentration 0.2 to 1.0%; chelating agents suitable for use in post-CMP cleaning; oxidizing agents such as hydrogen peroxide; and surfactants to reduce the surface tension. Solvents are chosen depending upon the contaminants to be removed.
- megasonic cleaning either batch cleaning or single wafer cleaning processes may be used.
- the wafers are placed vertically in the tank with the megasonic transducer at the bottom of the tank.
- the wafer is placed horizontally and a megasonic wand moved in a sweeping motion over the wafer surface.
- the megasonic transducer or wand operates at a frequency of about 800 kHz to about 1.3 MHz.
- the vibrations of the megasonic transducer or wand results in the formation of acoustic waves caused by wave attenuation in a viscous medium.
- a PNA brush is used.
- the brush is comprised of a soft spongelike material and is highly compressible. It rotates across the wafer surface with cleaning liquids simultaneously being directed through its core. The brush does not come in contact with the wafer surface. Instead, it hydroplanes over it, dislodging the contaminant particles by hydrodynamic drag forces as the liquid is both compressed and pushed along by the brush. It is therefore important that the wafer surface be hydrophilic so that the brush hydroplanes over the wafer surface and does not touch it. Once the contaminant particles are dislodged, they remain suspended in the liquid until they are removed from the wafer surface by the fluid flow.
- the bulk water is removed from the wafer surface and it then undergoes cryogenic cleaning.
- the bulk water may be removed by dipping the wafer in alcohol to displace the water or spraying it with alcohol while spinning the wafer. If desired, the surface may be completely dried.
- cryogenic cleaning occurs shortly after the wet cleaning to reduce the possibility of particle adhesion.
- the cryogenic cleaning will occur within 24 hours or less after wet cleaning.
- Standard cryogenic cleaning processes are well known in the industry and may be incorporated into the ACE cleaning process. An example of these techniques is described in U.S. Patent No. 5,853,962 issued December 29, 1998 to Eco- Snow Systems Inc.
- the typical cleaning system is shown in Figure 2.
- the cleaning container 12 provides an ultra clean, enclosed or sealed cleaning zone. Within this cleaning zone is the wafer 1 held on a platen 2 by vacuum. The platen with wafer is kept at a controlled temperature of up to 100°C.
- Liquid CO 2 from a cylinder at room temperature and 850 psi, is first passed through a sintered in-line filter 4 to filter out very small particles from the liquid stream to render the carbon dioxide as pure as possible and reduce contaminants in the stream.
- the liquid CO 2 is then made to expand through a small aperture nozzle, preferably of from 0.05" to 0.15" in diameter.
- the rapid expansion of the liquid causes the temperature to drop resulting in the formation of solid CO 2 snow particles entrained in a gaseous CO 2 stream flowing at a rate of approximately 1-3 cubic feet per minute.
- the stream of solid and gaseous CO is directed at the wafer surface at an angle of about 30 to about 60 degrees, preferably at an angle of about 45 degrees.
- the nozzle is preferably positioned at a distance of approximately 0.375" to 0.5" measured along the line of sight of the nozzle to the wafer.
- the humidity in the cleaning chamber is preferably maintained as low as possible, for example ⁇ -40°C dew point.
- the low humidity is present to prevent the condensation and freezing of water on the wafer surface from the atmosphere during the cleaning process which would increase the force of adhesion between the contaminant particles and the wafer surface by forming crystalline bridges between them.
- the low humidity can be maintained by the flow of nitrogen or clean dry air.
- the system also has a polonium nozzle mounted directly behind the CO 2 nozzle for enhancing the charge neutralization of the wafer which is mounted on an electrically ground platen.
- the electrostatic charge develops by triboelectrification due to the flow of CO through the nozzle and across the wafer surface and is aided by the low humidity maintained in the cleaning chamber.
- the removal mechanism is primarily by momentum transfer of the C0 2 cryogenic particles to overcome the force of adhesion of the contaminant particles on the wafer surface. Once the particles are "loosened", the drag force of the gaseous CO removes it from the surface of the wafer.
- the cleaning mechanism for organic film contaminants is by the formation of a thin layer of liquid C0 2 at the interface of the organic contaminant and the surface due to the impact pressure of the cryogenic CO on the wafer surface. The liquid CO 2 can then dissolve the organic contaminants and carry it away from the wafer surface.
- a liquid- assisted cryogenic process described in more detail in U.S.
- a liquid having a high vapour pressure such as but not limited to isopropyl alcohol, ethanol, acetone, ethanol-acetone mixtures of 50%v/v, methanol, methyl formate, methyl iodide, and ethyl bromide, is sprayed on the wafer .surface either during the cryogenic cleaning or prior to it.
- the liquid may be sprayed on the surface either as a thin layer for particle removal or as a thicker fihn which, when pushed by the cryogenic spray, would introduce additional drag forces to remove the particles.
- the liquid may be sprayed using any standard apparatus such as a Teflon misting nozzle used in wet benches for spraying deionized water on wafer surfaces. Additionally, a vapour of the liquid may be condensed on the wafer surface as in the vapour assisted cryogenic cleaning as described in U.S. patent application 60/369,852 filed April 5, 2002, incorporated herein by reference.
- the wafer is covered with the liquid preferably for up to ten minutes. It may be covered by one layer of spraying of the liquid or the wafer may be repeatedly sprayed with layers to ensure that the wafer remains wetted. After this time period, the CO 2 cryogenic spray is initiated. Standard techniques are used such as those described above.
- the liquid reduces the force of adhesion of the particle contaminants on the wafer surface by reducing the Hammaker constant component of the intervening medium. Therefore, the CO 2 cryogenic particles can easily dislodge the contaminants from the surface.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003212854A AU2003212854A1 (en) | 2002-08-09 | 2003-01-28 | Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques |
EP03708894A EP1554081A4 (en) | 2002-08-09 | 2003-01-28 | Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/215,859 US20040029494A1 (en) | 2002-08-09 | 2002-08-09 | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
US10/215,859 | 2002-08-09 |
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WO2004014604A1 true WO2004014604A1 (en) | 2004-02-19 |
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PCT/US2003/002643 WO2004014604A1 (en) | 2002-08-09 | 2003-01-28 | Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques |
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US (1) | US20040029494A1 (en) |
EP (1) | EP1554081A4 (en) |
JP (1) | JP3786651B2 (en) |
KR (1) | KR20050055699A (en) |
CN (1) | CN100377836C (en) |
AU (1) | AU2003212854A1 (en) |
TW (1) | TWI249783B (en) |
WO (1) | WO2004014604A1 (en) |
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JP2017011225A (en) * | 2015-06-25 | 2017-01-12 | 株式会社フジミインコーポレーテッド | Polishing method, composition for removing impurity, and substrate and method for manufacturing the same |
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Also Published As
Publication number | Publication date |
---|---|
KR20050055699A (en) | 2005-06-13 |
TW200405447A (en) | 2004-04-01 |
AU2003212854A1 (en) | 2004-02-25 |
EP1554081A1 (en) | 2005-07-20 |
CN100377836C (en) | 2008-04-02 |
EP1554081A4 (en) | 2010-05-19 |
JP3786651B2 (en) | 2006-06-14 |
TWI249783B (en) | 2006-02-21 |
CN1675028A (en) | 2005-09-28 |
JP2004079992A (en) | 2004-03-11 |
US20040029494A1 (en) | 2004-02-12 |
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