JPH02301138A - Apparatus and method for cleaning semiconductor wafer - Google Patents
Apparatus and method for cleaning semiconductor waferInfo
- Publication number
- JPH02301138A JPH02301138A JP12036389A JP12036389A JPH02301138A JP H02301138 A JPH02301138 A JP H02301138A JP 12036389 A JP12036389 A JP 12036389A JP 12036389 A JP12036389 A JP 12036389A JP H02301138 A JPH02301138 A JP H02301138A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- water
- pure water
- supply
- cleaning tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 36
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 18
- 125000003158 alcohol group Chemical group 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 238000001035 drying Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、半導体ウェーハ表面の異物を除去する半導体
ウェーへの洗浄装置および洗浄方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor wafer cleaning apparatus and cleaning method for removing foreign matter from the surface of a semiconductor wafer.
(従来の技術) /
半導体素子の微細化に伴ない半導体ウェーハ表面に形成
されるパターンは、高密度となり、また、その段差も大
きくなっている。これに伴ない、半導体ウェーハの洗浄
、乾燥工程が重要な工程となってきた。(Prior Art) / With the miniaturization of semiconductor elements, patterns formed on the surface of semiconductor wafers have become denser and their steps have become larger. Along with this, cleaning and drying processes for semiconductor wafers have become important processes.
従来の半導体ウェーへの洗浄装置およびその洗浄方法に
ついて第2図により説明する。A conventional semiconductor wafer cleaning apparatus and its cleaning method will be explained with reference to FIG.
第2図は、従来の洗浄装置の側面断面図で、上端周辺に
排水溝1aを巡らした洗浄槽1の底面近傍に、給水弁2
を設けた供給管3を設けたもので。FIG. 2 is a side sectional view of a conventional cleaning device, in which a water supply valve 2 is installed near the bottom of the cleaning tank 1, which has a drainage groove 1a around the upper end.
A supply pipe 3 is provided.
搬送篭4に搭載したウェーハ5を純水の流水中で洗浄す
る。The wafer 5 mounted on the transport basket 4 is washed in running pure water.
このように構成された洗浄装置を用いた洗浄方法につい
て説明する。A cleaning method using the cleaning device configured in this way will be described.
まず、給水弁2を開き、供給管3.から純水を供給し、
洗浄槽1の上端からあふれさせる0次に、給水弁2は開
けたまま、搬送篭4に、ウェーバ5を載せ、純水中に浸
漬する。排水の比抵抗を連続して測定し、例えば、16
MΩ・口の規定値に達するか、あるいは、例えば60分
間の規定時間経過した時に、搬送篭4を引き上げ乾燥さ
せる。First, open the water supply valve 2, and open the supply pipe 3. Supply pure water from
Next, the weber 5 is placed on the transport basket 4 and immersed in pure water with the water supply valve 2 left open. Continuously measure the specific resistance of the wastewater, e.g.
When a specified value of MΩ is reached or a specified time of, for example, 60 minutes has elapsed, the transport basket 4 is pulled up and dried.
(発明が解決しようとする課題)
しかしながら、上記の洗浄装置と洗浄方法では、ウェー
ハ5の表面が疎水性の場合には、洗浄槽1から取り出さ
れたウェーハ5の表面には多数の水滴が付着する。この
水滴は、ウェーハ5の表面に形成されたパターン段差が
大きい場所はど付着しやすく例えば、スピン乾燥のよう
に遠心力を利用した脱水法を採用しても完全に除去され
得ない場合がある。(Problem to be Solved by the Invention) However, in the above cleaning apparatus and cleaning method, when the surface of the wafer 5 is hydrophobic, many water droplets adhere to the surface of the wafer 5 taken out from the cleaning tank 1. do. These water droplets tend to adhere to areas where there are large pattern steps formed on the surface of the wafer 5, and may not be completely removed even if a dehydration method using centrifugal force such as spin drying is employed. .
ウェーハ5の表面に残った水滴は、ウェーハ5と反応し
て染み状の異物を形成し、これが半導体素子の不良の原
因となるという問題があった。染み状異物ができる条件
は水滴の乾燥までの時間によって決まり、乾燥までの時
間が長ければ発生の可能性は極めて大きくなる。There is a problem in that the water droplets remaining on the surface of the wafer 5 react with the wafer 5 to form stain-like foreign matter, which causes defects in semiconductor devices. The conditions for the formation of stain-like foreign matter are determined by the time it takes for the water droplets to dry, and the longer it takes for the water droplets to dry, the greater the possibility of their occurrence.
本発明は上記の問題を解決するもので、染み状異物の発
生しない洗浄装置および洗浄方法を提供するものである
。The present invention solves the above problems and provides a cleaning device and a cleaning method that do not generate stain-like foreign matter.
(課題を解決するための手段)
上記の課題を解決するため1本発明は、洗浄槽の底に、
大口径の排水管を、また、底面近傍にアルコールの供給
管をそれぞれ設置し、純水による洗浄が終了すれば、短
時間で純水を排出してアルコールに入れ換えるものであ
る。(Means for Solving the Problems) In order to solve the above problems, the present invention provides:
A large-diameter drain pipe and an alcohol supply pipe are installed near the bottom, and when cleaning with pure water is completed, the pure water can be drained and replaced with alcohol in a short time.
(作 用)
上記の構成によれば、ウェーハの表面に水滴が付着して
いる時間は極めて短時間となるばかりでなく、付着した
水滴はアルコールに溶解して消滅する。(Function) According to the above configuration, not only does the time that water droplets remain attached to the surface of the wafer become extremely short, but also the attached water droplets are dissolved in alcohol and disappear.
(実施例)
本発明の一実施例について第1図により説明する。同図
において、本実施例が第2図に示した従来例と異なる点
は、洗浄槽1の底面を漏斗状にしてその末端に大口径の
排水管6を設け、排水弁7で開閉できるようにした点と
、底面近傍にアルコールを供給する供給弁8を備えた供
給管9を設けた点である。その他は従来例と変わらない
ので、同じ構成部品には同一符号を付してその説明を省
略する。(Example) An example of the present invention will be described with reference to FIG. In the same figure, the difference between this embodiment and the conventional example shown in FIG. and that a supply pipe 9 equipped with a supply valve 8 for supplying alcohol is provided near the bottom. Since the rest is the same as the conventional example, the same components are given the same reference numerals and their explanations will be omitted.
このように構成された洗浄装置を用いるウェーハの洗浄
方法について説明する。A wafer cleaning method using the cleaning apparatus configured as described above will be described.
まず、給水弁2を開き、純水を洗浄槽1に入れ上端から
排水槽1aにあふれさせる。次にウェーハ5を載せた搬
送篭4を浸漬し、流量約1511/winで約20分水
洗する。比抵抗が16MΩ・1以上(20℃)となって
いるのを確認して、給水弁2を閉じ、排水弁7を開いて
洗浄槽1内の純水を一気に排出する。First, the water supply valve 2 is opened, and pure water is poured into the cleaning tank 1 and overflows from the upper end into the drain tank 1a. Next, the transport basket 4 carrying the wafer 5 is immersed and washed with water for about 20 minutes at a flow rate of about 1511/win. After confirming that the specific resistance is 16 MΩ·1 or more (at 20° C.), the water supply valve 2 is closed, the drain valve 7 is opened, and the pure water in the cleaning tank 1 is discharged all at once.
純水の排出が終了すると同時に供給弁8を開き、イソプ
ロピルアルコール液を供給する。イソプロピルアルコー
ルの供給速度は、ウェーハ5の上部に達する時間を、約
10秒程度にする。イソプロピルアルコール液が、洗浄
槽1を完全に満たしたことを確認して搬送篭4を取り出
す。At the same time as the discharge of pure water is completed, the supply valve 8 is opened to supply isopropyl alcohol solution. The supply rate of isopropyl alcohol is such that the time required for it to reach the upper part of the wafer 5 is about 10 seconds. After confirming that the cleaning tank 1 is completely filled with the isopropyl alcohol solution, the transport basket 4 is taken out.
この方法によりウェーハ5の表面に水滴が残らなくなり
、乾燥までの時間を要しても染み状異物の発生はなくな
る。By this method, no water droplets remain on the surface of the wafer 5, and no stain-like foreign matter is generated even if it takes a long time to dry.
(発明の効果)
以上説明したように、本発明によれば、染み状異物が発
生しないウェーハの洗浄が可能となり、高歩留りで信頼
性の高い半導体素子の製造を可能とする。(Effects of the Invention) As described above, according to the present invention, it is possible to clean a wafer without generating stain-like foreign matter, and it is possible to manufacture semiconductor devices with high yield and high reliability.
第1図および第2図は本発明による実施例および従来例
をそれぞれ示す半導体ウェーハの洗浄装置の側面断面図
である。
1・・・洗浄槽、 la・・・排水溝、 2・・給水
弁、3.9・・・供給管、 4・・・搬送篭、 5・・
ウェーハ、 6・・・排水管、 7・・・排水弁、8・
・・供給弁。
特許出願人 松下電子工業株式会社
第1図
第2図1 and 2 are side sectional views of a semiconductor wafer cleaning apparatus showing an embodiment according to the present invention and a conventional example, respectively. 1...Cleaning tank, la...Drainage ditch, 2...Water supply valve, 3.9...Supply pipe, 4...Transport basket, 5...
wafer, 6...drain pipe, 7...drain valve, 8...
...Supply valve. Patent applicant: Matsushita Electronics Co., Ltd. Figure 1 Figure 2
Claims (2)
傍に設けたそれぞれ開閉弁を備えた2個の供給口と、そ
の底面に設けた排水弁を備えた大口径の排水口とからな
る半導体ウェーハの洗浄装置。(1) A cleaning tank with an overflow at the top, two supply ports each equipped with an on-off valve near its bottom, and a large-diameter drain port equipped with a drain valve located at the bottom. Semiconductor wafer cleaning equipment consisting of:
あふれぜきからあふれさせる流水の中に、半導体ウェー
ハを浸漬し、純水による洗浄が終了した時点で、排水弁
を開いて純水を一気に排出した後、他の供給口からアル
コール液を供給し、半導体ウェーハを浸漬してから取り
出す半導体ウェーハの洗浄方法。(2) Supply pure water from one of the above supply ports, immerse the semiconductor wafer in the flowing water that overflows from the overflow at the top end, and open the drain valve when cleaning with pure water is finished. A method of cleaning semiconductor wafers in which the pure water is discharged all at once, and then an alcohol solution is supplied from another supply port to immerse the semiconductor wafer and then taken out.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12036389A JPH02301138A (en) | 1989-05-16 | 1989-05-16 | Apparatus and method for cleaning semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12036389A JPH02301138A (en) | 1989-05-16 | 1989-05-16 | Apparatus and method for cleaning semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02301138A true JPH02301138A (en) | 1990-12-13 |
Family
ID=14784345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12036389A Pending JPH02301138A (en) | 1989-05-16 | 1989-05-16 | Apparatus and method for cleaning semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02301138A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004079992A (en) * | 2002-08-09 | 2004-03-11 | Eco-Snow Systems Inc | Method of removing post-cmp contaminants |
-
1989
- 1989-05-16 JP JP12036389A patent/JPH02301138A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004079992A (en) * | 2002-08-09 | 2004-03-11 | Eco-Snow Systems Inc | Method of removing post-cmp contaminants |
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