EP1547245A2 - Montage filtrant - Google Patents

Montage filtrant

Info

Publication number
EP1547245A2
EP1547245A2 EP03792167A EP03792167A EP1547245A2 EP 1547245 A2 EP1547245 A2 EP 1547245A2 EP 03792167 A EP03792167 A EP 03792167A EP 03792167 A EP03792167 A EP 03792167A EP 1547245 A2 EP1547245 A2 EP 1547245A2
Authority
EP
European Patent Office
Prior art keywords
filter
gate
symmetrical
asymmetrical
filter stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03792167A
Other languages
German (de)
English (en)
Inventor
Juha Sakari ELLÄ
Hans-Jörg TIMME
Robert Aigner
Stephan Marksteiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Nokia Oyj
Original Assignee
Infineon Technologies AG
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Nokia Oyj filed Critical Infineon Technologies AG
Publication of EP1547245A2 publication Critical patent/EP1547245A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0023Balance-unbalance or balance-balance networks
    • H03H9/0095Balance-unbalance or balance-balance networks using bulk acoustic wave devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58Multiple crystal filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F17/0006Printed inductances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00Variable inductances or transformers of the signal type
    • H01F21/12Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125Printed variable inductor with taps, e.g. for VCO
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42Balance/unbalance networks

Definitions

  • RF filters based on resonators such as BAW filters
  • BAW filters have two basic topologies, which are explained in more detail with reference to FIGS. 1 and 2.
  • the first topology (see FIG. 1) is the so-called "ladder filter” (ladder filter).
  • the ladder filter 100 comprises an input port 102 with a first input port 104 and a second input port 106. Furthermore, the filter 100 comprises an output port 108 with a first output connection 110 and a second output connection 112. An input signal ON is present at the first input connection 104 of the input gate 102, and an output signal OFF is present at the first output connection 110 of the output gate 108.
  • two series resonators R sl and R s2 are connected in series to the first input connection 104 and the first output connection 110.
  • the first parallel resonator R p ⁇ is parallel to the input port 102 and parallel to the first series resonator R sl
  • the second parallel resonator R p2 is parallel to the output gate 108 and parallel to the second serial number esonator R s2 switched.
  • the second input port 106 and the second output port 106 circuit 112 are with a reference potential 114, z. B. ground connected.
  • the parallel resonators R pl and R p2 are also connected to the reference potential.
  • the conventional filter shown in FIG. 1 is a ladder filter with two stages with a single input ON and a single output OFF for the transmission of asymmetrical signals.
  • FIG. 2 A known lattice filter (bridge filter) with one stage (two series resonators and two parallel resonators) is explained in more detail in FIG. 2.
  • bridge filter with one stage (two series resonators and two parallel resonators) is explained in more detail in FIG. 2.
  • FIG. 2 Similar or identical components that have already been described with reference to FIG. 1 are provided with the same reference symbols.
  • the lattice filter 120 receives a symmetrical input signal IN at the first input connection 104 and at the second input connection 106 of the input gate 102.
  • a symmetrical output connection OUT is output at the output signal 108 at the connections 110 and 112.
  • a series resonator R s ⁇ is provided between the first input connection 104 and the first output connection 110.
  • a series resonator R s2 is likewise provided between the second input connection 106 and the second output connection 112.
  • a first parallel resonator R p ⁇ is connected between the first input connection 104 and the second output connection 112.
  • a second parallel resonator R p2 is connected between the second input connection 106 and the first output connection 110.
  • the filter 120 shown in FIG. 2 is completely differential, ie both input gates 102 and 110 are symmetrical (balanced).
  • Filters with good selectivity and low insertion losses can be made using BAW resonators, which are used to build individual blocks or stages of impedance element filters.
  • This fil- ter have two basic topologies, which are explained in more detail with reference to FIGS. 1 and 2.
  • the series resonators and parallel resonators are preferably BAW resonators, the series resonators and the parallel resonators each being produced with a predetermined resonance frequency.
  • the resonance frequencies of the parallel resonators are preferably detuned from the resonance frequencies of the series resonators in order to achieve the desired filter effect.
  • the series resonators and parallel resonators used in the ladder filter 100 differ from the series resonators and parallel resonators used in the Lattice filter 120, in particular in filter circuits with essentially the same filter characteristics but different topology.
  • the lattice filter 120 only enables the reception of a symmetrical input signal and the output of a symmetrical output signal.
  • a conventional method for carrying out a corresponding conversion / transformation consists in providing an additional component, which is referred to as a balun.
  • the balun may be either a magnetic transmitter (magnetic transformer), an LC circuit or a stripline structure, the balun being arranged on a printed circuit board before or after one of the filter circuits shown in FIGS. 1 and 2. While the use of discrete balancing devices before or after the filters is one option, it increases the number of components and space required on the printed circuit board.
  • SAW filters surface acoustic wave filters
  • an acoustic balancing function can be implemented without additional components, but this significantly deteriorates the behavior of the overall filter.
  • this balancing function means that these filters are very sensitive to electrostatic discharges and, furthermore, the capabilities in the handling of powers are drastically limited, i. H. the transferable power through such a filter structure is very low.
  • An example of such a SAW filter is described in JP 2000-114917A.
  • Another disadvantage of the coupled SAW filters is that the response of these filters is generally worse than that of impedance element filters, in particular the so-called roll-off or the selectivity in the vicinity of the pass band.
  • the present invention has for its object to provide an improved filter circuit which enables a conversion of symmetrical / asymmetrical to asymmetrical / symmetrical signals in a simple manner, the filter stage and the balancing member being formed on the substrate ,
  • the present invention provides a filter circuit with a symmetrical gate, an asymmetrical gate, a substrate and a series circuit.
  • the series connection consists of a filter stage and a balun and is arranged between the symmetrical gate and the asymmetrical gate.
  • the filter stage of the series circuit preferably comprises a plurality of BAW resonators, and here at least one series BAW resonator and at least one parallel BAW resonator.
  • the filter stage is an asymmetrical filter stage which is connected to the asymmetrical gate, and the balancing member is connected to the symmetrical gate.
  • the filter stage is a symmetrical filter stage which is connected to the symmetrical gate is connected, and the balancing member is connected to the asymmetrical gate.
  • the filter stage is a symmetrical filter stage which is connected to the symmetrical gate, and furthermore the series circuit comprises an asymmetrical filter stage which is connected to the asymmetrical gate.
  • the balun is connected between the symmetrical filter stage and the asymmetrical filter stage. All filter stages and the balun are also formed on the same substrate.
  • adaptation elements in the series circuit which are connected between the filter stage and the asymmetrical gate or the symmetrical gate and which are formed on the substrate together with the elements of the filter stage and the elements of the balancing member.
  • the balun is preferably a transmitter element that has at least two coils that are formed on the substrate.
  • the coils of the balun are selected in such a way that they have different numbers of turns, so that an impedance transformation between the two gates of the filter circuit is brought about due to the resulting winding ratio.
  • the substrate is preferably a substrate with a high resistance value, on which the coils are formed, for example by metal tracks.
  • the coil can be arranged on the substrate in an area in which an acoustic reflector is provided.
  • the present invention thus creates RF filters, and in particular RF filters, which are implemented using BAW technology, which include additional monolithic passive elements, such as converters (balancing components), but additionally also coils, capacitors or resistance elements.
  • the present invention is based on the knowledge that a combination of the desirable features of impedance filters with the possibility of converting asymmetrical / symmetrical signals into symmetrical / asymmetrical signals can be achieved by modifying a basic manufacturing process of the BAW resonators in such a way that In addition, monolithic baluners (baluns) can be produced on the filter chips (substrates). This also opens up the possibility of an impedance level transformation between the input gates of the filters.
  • impedance element filters it is possible to use impedance element filters and at the same time to carry out a transformation of symmetrical / asymmetrical signals into asymmetrical / symmetrical signals and, if appropriate, additionally an impedance level transformation within the filter chip in monolithic form, that is to say without external components.
  • the symmetry elements are preferably two spiral coils which are arranged on top of one another and are magnetically coupled to one another.
  • An advantage of the present invention is that a process which is used to manufacture the symmetry elements also opens up the possibility of producing monolithic coils (spiral inductors) with high quality factors (high Q factor), which are then used as elements of the symmetry element or additional can be used as matching elements.
  • these adaptation elements are currently still used as external elements. realized outside the filter chip, which brings with it the problems mentioned above.
  • capacitors can also be produced in a simple manner, and also as monolithic elements on the filter chip, since different layers of dielectric material are used to manufacture the BAW resonators be used.
  • the capacitors produced in this way can be used as matching capacitors or as coupling capacitors.
  • 1 shows a known ladder filter with two stages consisting of two series resonators and two parallel resonators
  • FIG. 3 shows a first exemplary embodiment of the filter circuit according to the invention with an asymmetrical filter stage at an asymmetrical input gate and a balancing element at a symmetrical output
  • 4 shows a second exemplary embodiment of the filter circuit according to the invention with a symmetrical filter stage on a symmetrical gate and a balancing member on an asymmetrical gate
  • FIG. 5 shows a third exemplary embodiment of the filter circuit according to the invention with a symmetrical filter stage at the symmetrical gate, an asymmetrical filter stage at the asymmetrical gate and a balancing member arranged between the two filter stages;
  • FIG. 6 shows a fourth exemplary embodiment of the filter circuit according to the invention, similar to that shown in FIG. 4, which additionally comprises matching elements;
  • FIG. 7 shows a schematic, exemplary representation for a planar symmetry member structure.
  • the filter circuit 200 comprises an asymmetrical connection 202 and a symmetrical connection 204 with the two symmetrical gates 204a and 204b.
  • a series circuit comprising a filter stage 206 and a balun 208 is connected between the unbalanced connection 202 and the balanced connection 204.
  • the filter stage 206 is an asymmetrical filter stage in the form of a ladder filter, as was described by way of example with reference to FIG. 1.
  • the filter stage 206 summarizes two series resonators R si and R s2 and two parallel resonators R p ⁇ and R p2 .
  • the unbalanced connection 202 comprises a first node 210 and a second node 212.
  • the second node 212 is connected to a reference potential 214, e.g. B. ground connected.
  • the filter stage 206 comprises a series circuit consisting of the two series resonators R sl and R s2 , which are connected between the first node 210 and a third node 216.
  • the first parallel resonator R p ⁇ is connected between the reference potential 214 and a node 218 between the first series resonator R s ⁇ and the second series resonator R s2 .
  • the second parallel resonator R p2 is connected between the third node 216 and the reference potential 214.
  • the balancing member 208 is formed by two coupled coils 220a and 222a, a first connection 220b of the first coil 220a being connected to the third node 216. A second connection 220c of the first coil 220a is connected to the reference potential 214.
  • the first gate 204a of the symmetrical connection 204 comprises a first node 224 and a second node 226, which is connected to the reference potential 214.
  • the second port 204b includes a first port 228 and also the node 226 used in common with the first port 204a.
  • the symmetrical signals are tapped or received between nodes 224 and 226 or nodes 228 and 226.
  • a first connection 222b of the second coil 222a of the balancing member 208 is connected to the first node 224 of the first symmetrical gate 204a.
  • a second terminal 222c of the second coil 222a is connected to the first node of the second symmetrical gate 204b.
  • 3 thus shows a topology of a ladder filter which is combined with a balun.
  • the filter itself has a ladder structure and can have more than the two stages shown there in order to improve the selectivity.
  • the stages can additionally have series and parallel resonators of different sizes in order to further improve the selectivity.
  • the symmetrizing members are essentially two spiral coils that are magnetically coupled to one another.
  • the metals used to manufacture the coil elements In order to keep the resistive losses and parasitic capacitance low, it is desirable to produce the metals used to manufacture the coil elements with a sufficient thickness using a modified BAW manufacturing process.
  • the thickness of the metal tracks or metal surfaces used should be such that it is in the range from 800 nm to 10 ⁇ m, or is greater by a factor of 2 to 20 compared to the thicknesses of the electrode metals used in the BAW resonators.
  • the elements of the filter stage 206 shown in FIG. 3 and the elements of the balancing member 208 are jointly formed on a chip or substrate S, as is schematically indicated in FIG. 3. As already explained above, this only requires a slight modification of the manufacturing processes for the BAW resonators, which is only associated with slightly higher costs, but has the advantage that external components are avoided on a circuit board on which the chip S is arranged become. This also makes the entire manufacturing process easier.
  • the substrate S is preferably a substrate with a high resistance, and the coils are preferably separated from the substrate by dielectric layers, one or more. According to a preferred embodiment of the In the present invention, this can be implemented in a simple manner, since here the required acoustic reflector for the BAW resonators is formed in the substrate S, and the extension of the resonator is selected such that the symmetry member 208 can also be formed above it.
  • the balun has a 1: 1 winding ratio, but the number of turns in the primary and secondary windings can be varied to provide a desired impedance level transformation between terminals 202 and 204.
  • the present invention has the advantage that the integration of the balancing member 208 as well as the integration of further coils and capacitors within a filter structure based on BAW resonators can be achieved on the same substrate S, only a few additional mask steps being required.
  • the combination of symmetry element and filter stage can have different topologies, it being possible in principle to choose whether the filtering should be carried out before or after the transformation. In the former case the filter stage would contain a ladder filter structure and in the latter case a lattice filter structure. The lattice filter structure is preferred because of the improved attenuation outside the pass band compared to ladder filter structures.
  • FIG. 4 showing a second exemplary embodiment in which, instead of the ladder filter structure used in FIG. 3, a lattice filter structure is used, which has the symmetrical input 204 of the filter circuit is connected.
  • the balun 208 is connected between the filter stage 206 and the unbalanced input 202.
  • a first series resonator R si is connected in the filter stage 206 between the first connection 222b of the second coil 222a of the balancing member 208 and the connection 224 of the balanced output 204.
  • a second series resonator R s2 is connected between the second connection 222c of the second coil 222a of the balancing member 208 and the second connection 228 of the balanced output 204.
  • a first parallel resonator R pi is connected between the first connection 222b of the second coil 222a and the second node 228 of the symmetrical connection 204, and a second parallel resonator R p2 is connected between the second connection 222c of the second coil 222a and the first node 224 of the symmetrical connection 204 switched.
  • the first node 210 of the unbalanced connection 202 is connected to the first connection 220b of the first coil 220a of the balancing member 208, and the second node 220c of the first coil 220a is connected to the reference potential 214, as is the first node 212 of the unbalanced connection 202.
  • the BAW resonators R s ⁇ , R s2 are also here.
  • R p2 is formed together with the elements of the balancing member 208 on a common substrate or chip.
  • FIG. 5 shows a further exemplary embodiment of the present invention, which differs from the exemplary embodiment shown in FIG. 4 in that a further filter stage 230 was connected between the asymmetrical connection 202 and the balancing member 208, in the exemplary embodiment shown an asymmetrical filter stage in the form of a single-stage ladder filter.
  • the filter stage 230 comprises a series resonator R s ⁇ , which is between the first node 210 of the unbalanced connection 202 and the first Connection 220b of the first coil 220a of the balancing member 208 is connected.
  • a parallel resonator R pl is also provided, which is connected between the first connection 220b of the first coil 220a and the reference potential 214.
  • all BAW resonators and all elements of the balancing member are formed on a common substrate.
  • FIG. 6 shows a further exemplary embodiment in which, in addition to the exemplary embodiment shown in FIG. 4, an adaptation block 232 is connected between the filter stage 206 and the symmetrical output 204.
  • Block 232 comprises an inductive component L and two capacitive components Ci and C 2 . Both the capacitive components and the inductive component are formed on the filter chip together with the elements of the balancing element 208 and the BAW resonators of the filter stage 206.
  • the capacitive component Ci is connected between the first series resonator R s ⁇ of the filter stage 206 and the first node 224 of the symmetrical output 204.
  • the second capacitive component C 2 is connected between the second series resonator R s2 of the filter stage 206 and the second node 228 of the symmetrical connection 204.
  • the inductive component L is connected in parallel to the symmetrical output connection 204, between a node between the first series resonator R s ⁇ and the first capacitive component Ci and a node between the second resonator R s2 and the second capacitive component C 2 .
  • FIG. 7 A planar structure is shown in FIG. 7, which is formed from a plurality of metallic conductor tracks.
  • the coils are formed by a plurality of spirally arranged metallic conductor tracks 300, 302 and 304. Det, wherein the conductor tracks 302 and 304 are connected to the reference potential 214 and the electrical connection 306.
  • the second coil 222a of the balancing member 208 is formed by the conductor tracks 302 and 304, which are connected in the manner described above, and the connections 222b and 222c are shown in FIG. 7.
  • the first coil 220a is formed by the conductor track 300, and its connections 220b and 222c are also shown.
  • the advantage of the present invention is that, in contrast to the prior art, it comprises a miniaturized magnetic transformer as an additional element, which was produced monolithically together with the elements of the filter stage.
  • the filter circuits according to the invention can have one or more stages on the input side and / or on the output side. LIST OF REFERENCE NUMBERS

Abstract

La présente invention concerne un montage filtrant comprenant une porte symétrique (204), une porte asymétrique (202) et un substrat (S). Un montage série d'un étage filtrant (206) et d'un élément d'équilibrage (208) est disposé entre la porte symétrique (204) et la porte asymétrique (202). L'élément d'équilibrage (208) et l'étage filtrant (206) sont formés sur le substrat (S).
EP03792167A 2002-07-30 2003-07-01 Montage filtrant Withdrawn EP1547245A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10234685 2002-07-30
DE10234685A DE10234685A1 (de) 2002-07-30 2002-07-30 Filterschaltung
PCT/EP2003/007015 WO2004019491A2 (fr) 2002-07-30 2003-07-01 Montage filtrant

Publications (1)

Publication Number Publication Date
EP1547245A2 true EP1547245A2 (fr) 2005-06-29

Family

ID=30469197

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03792167A Withdrawn EP1547245A2 (fr) 2002-07-30 2003-07-01 Montage filtrant

Country Status (8)

Country Link
US (1) US7199684B2 (fr)
EP (1) EP1547245A2 (fr)
JP (1) JP2005535264A (fr)
KR (1) KR100687076B1 (fr)
CN (1) CN100525099C (fr)
AU (1) AU2003257428A1 (fr)
DE (2) DE10234685A1 (fr)
WO (1) WO2004019491A2 (fr)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2864733A1 (fr) 2003-12-29 2005-07-01 St Microelectronics Sa Boucle a verrouillage de phase integrable dotee d'un resonateur acoustique
FR2864729B1 (fr) 2003-12-29 2006-05-05 St Microelectronics Sa Resonateur acoustique integrable , et procede d'integration d'un tel resonateur
FR2864727B1 (fr) 2003-12-29 2007-05-11 St Microelectronics Sa Circuit electronique comportant un resonateur destine a etre integre dans un produit semi-conducteur
EP1764918A4 (fr) * 2004-06-17 2008-01-16 Matsushita Electric Ind Co Ltd Filtre de résonateur fbar
WO2006018788A1 (fr) * 2004-08-20 2006-02-23 Philips Intellectual Property & Standards Gmbh Filtre d'ondes acoustiques en volume a bande etroite
KR100649497B1 (ko) * 2004-09-23 2006-11-28 삼성전기주식회사 불평형-평형 입출력 구조의 fbar필터
US7187255B2 (en) * 2004-10-26 2007-03-06 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Arrangement of lattice filter
FR2883432B1 (fr) 2005-03-18 2008-02-22 St Microelectronics Sa Circuit de filtrage accordable en frequence integrable, comportant un jeu de resonateurs baw
KR100656335B1 (ko) * 2005-04-14 2006-12-13 한국과학기술원 전송선 변압기
FR2888060A1 (fr) 2005-07-01 2007-01-05 St Microelectronics Sa Circuit de filtrage passe-bande dote de resonateurs acoustiques
US7479850B2 (en) * 2006-04-05 2009-01-20 Tdk Corporation Miniaturised half-wave balun
FR2904492A1 (fr) 2006-07-28 2008-02-01 St Microelectronics Sa Circuit de filtrage dote de resonateurs acoustiques
US8103224B1 (en) * 2006-09-19 2012-01-24 Rf Micro Devices, Inc. Method and apparatus for the integration of a high efficiency power amplifier with an integrated transceiver for wireless communication
US20080101263A1 (en) * 2006-10-30 2008-05-01 Skyworks Solutions, Inc. Single-ended to differential duplexer filter
KR101523403B1 (ko) * 2007-08-29 2015-05-27 스카이워크스 솔루션즈, 인코포레이티드 밸룬 시그널 스플리터
FR2920612B1 (fr) 2007-09-03 2009-12-04 St Microelectronics Sa Circuit d'accord en frequence pour filtre treillis
US8576026B2 (en) * 2007-12-28 2013-11-05 Stats Chippac, Ltd. Semiconductor device having balanced band-pass filter implemented with LC resonator
US7795889B2 (en) 2008-01-25 2010-09-14 Infineon Technologies Ag Probe device
JP4871966B2 (ja) 2009-01-30 2012-02-08 太陽誘電株式会社 高周波デバイス、フィルタ、デュープレクサ、通信モジュール、通信装置
JP5210253B2 (ja) * 2009-07-01 2013-06-12 太陽誘電株式会社 弾性波デバイス
KR101565995B1 (ko) * 2009-07-16 2015-11-05 삼성전자주식회사 듀얼-입력 듀얼-출력의 필터를 이용한 멀티-대역의 라디오 주파수 신호 송수신 시스템
US8791775B2 (en) 2010-03-30 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming high-attenuation balanced band-pass filter
DE102011100468B4 (de) * 2011-05-04 2013-07-04 Epcos Ag Mit akustischen Volumenwellen arbeitendes BAW-Filter, Herstellungsverfahren hierfür und Duplexer
KR101919115B1 (ko) 2012-02-29 2018-11-15 삼성전자주식회사 Bawr 을 이용한 필터
CN103716010B (zh) * 2013-12-30 2017-11-17 宇龙计算机通信科技(深圳)有限公司 一种巴伦电路及终端
US11769949B2 (en) 2016-08-29 2023-09-26 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11764749B2 (en) 2016-08-29 2023-09-19 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11764473B2 (en) 2016-08-29 2023-09-19 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11894622B2 (en) 2016-08-29 2024-02-06 Silicon Laboratories Inc. Antenna structure with double-slotted loop and associated methods
US11749893B2 (en) 2016-08-29 2023-09-05 Silicon Laboratories Inc. Apparatus for antenna impedance-matching and associated methods
US11894621B2 (en) 2017-12-18 2024-02-06 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band balun with improved performance and associated methods
US11894826B2 (en) 2017-12-18 2024-02-06 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band balun and associated methods
US11916514B2 (en) 2017-11-27 2024-02-27 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band wideband balun and associated methods
US11750167B2 (en) 2017-11-27 2023-09-05 Silicon Laboratories Inc. Apparatus for radio-frequency matching networks and associated methods
CN109217836B (zh) * 2018-09-03 2022-05-31 南京邮电大学 四端口低反射式双工滤波器
CN110971209B (zh) * 2019-11-04 2023-10-20 天津大学 提高体声波滤波器功率容量的方法及滤波元件
US11581853B2 (en) * 2021-01-27 2023-02-14 Avago Technologies International Sales Pte. Limited Wideband filter for direct connection to differential power amplifier
US20230093885A1 (en) * 2021-09-24 2023-03-30 RF360 Europe GmbH Harmonic Reduction with Filtering
US11862872B2 (en) 2021-09-30 2024-01-02 Silicon Laboratories Inc. Apparatus for antenna optimization and associated methods
US20230353117A1 (en) * 2022-04-28 2023-11-02 RF360 Europe GmbH Bridge Filters

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374448A (en) * 1964-05-25 1968-03-19 Damon Eng Inc High efficiency contiguous comb filter
US4623894A (en) * 1984-06-22 1986-11-18 Hughes Aircraft Company Interleaved waveguide and dipole dual band array antenna
FI93679C (fi) * 1991-10-23 1995-05-10 Nokia Mobile Phones Ltd Taajuusselektiivinen mikroliuskamuuntaja sekä diodisekoitin
JPH08148968A (ja) * 1994-11-24 1996-06-07 Mitsubishi Electric Corp 薄膜圧電素子
CA2178438C (fr) * 1995-06-16 2001-11-20 Ji-Dong Dai Filtres en cascade pour dispositifs a ondes de surface
JP3186604B2 (ja) * 1996-10-09 2001-07-11 株式会社村田製作所 弾性表面波フィルタ装置
WO1998034345A1 (fr) * 1997-01-31 1998-08-06 Motorola Inc. Resonateur couple en ligne comportant un filtre en treillis et procede afferent
JP2000114917A (ja) * 1998-09-30 2000-04-21 Kyocera Corp バランス型弾性表面波フィルタ
JP2000244337A (ja) * 1999-02-19 2000-09-08 Matsushita Electric Ind Co Ltd 送信モジュール
DE19962028A1 (de) * 1999-12-22 2001-06-28 Philips Corp Intellectual Pty Filteranordnung
US6542055B1 (en) * 2000-10-31 2003-04-01 Agilent Technologies, Inc. Integrated filter balun
US6407649B1 (en) * 2001-01-05 2002-06-18 Nokia Corporation Monolithic FBAR duplexer and method of making the same
US6803835B2 (en) * 2001-08-30 2004-10-12 Agilent Technologies, Inc. Integrated filter balun
US6670866B2 (en) * 2002-01-09 2003-12-30 Nokia Corporation Bulk acoustic wave resonator with two piezoelectric layers as balun in filters and duplexers
DE20221966U1 (de) * 2002-06-06 2010-02-25 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement mit einem Anpaßnetzwerk

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004019491A2 *

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CN1672326A (zh) 2005-09-21
US20050212619A1 (en) 2005-09-29
DE10392971D2 (de) 2005-07-21
KR100687076B1 (ko) 2007-02-26
AU2003257428A8 (en) 2004-03-11
JP2005535264A (ja) 2005-11-17
DE10392971B4 (de) 2010-07-08
DE10234685A1 (de) 2004-02-19
WO2004019491A2 (fr) 2004-03-04
AU2003257428A1 (en) 2004-03-11
CN100525099C (zh) 2009-08-05
WO2004019491A3 (fr) 2005-05-06
KR20050089957A (ko) 2005-09-09
US7199684B2 (en) 2007-04-03

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