EP1525334A1 - Procede et systeme pour traiter un materiau support par irradiation aux ions lourds et gravure successive - Google Patents

Procede et systeme pour traiter un materiau support par irradiation aux ions lourds et gravure successive

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Publication number
EP1525334A1
EP1525334A1 EP03783928A EP03783928A EP1525334A1 EP 1525334 A1 EP1525334 A1 EP 1525334A1 EP 03783928 A EP03783928 A EP 03783928A EP 03783928 A EP03783928 A EP 03783928A EP 1525334 A1 EP1525334 A1 EP 1525334A1
Authority
EP
European Patent Office
Prior art keywords
energy
carrier
ion
heavy
heavy ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03783928A
Other languages
German (de)
English (en)
Inventor
Manfred Danziger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fractal AG
IST Ionenstrahltechnologie GmbH
Original Assignee
Fractal AG
IST Ionenstrahltechnologie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fractal AG, IST Ionenstrahltechnologie GmbH filed Critical Fractal AG
Publication of EP1525334A1 publication Critical patent/EP1525334A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0002—Organic membrane manufacture
    • B01D67/0023—Organic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/0032—Organic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/06—Organic material
    • B01D71/48—Polyesters
    • B01D71/481—Polyarylates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F1/00—Perforating; Punching; Cutting-out; Stamping-out; Apparatus therefor
    • B26F1/26—Perforating by non-mechanical means, e.g. by fluid jet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/66—Current collectors
    • H01G11/70—Current collectors characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/055—Etched foil electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2323/00—Details relating to membrane preparation
    • B01D2323/34—Use of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Definitions

  • the invention relates to a method and an arrangement for processing dielectric carrier material by heavy ion irradiation and subsequent etching, as a result of which a surface depth relief can be impressed on the carrier material, which forms the basis for passive or active layers adhered to the carrier material.
  • latent traces With a diameter arise in the nanometer range (10 to a few 10 nm). The length of these tracks depends on the entry energy of the ions. Within these latent traces, the material is radiation modified and has different physical and chemical properties than the surrounding dielectric.
  • the shape of the recesses formed depends on the etching speed of the unchanged material (material etching rate VB) and that of the modified material in the latent ion track (track etching rate vs ). These two parameters can be selected by the choice of the etchant Concentration and temperature can be varied. Since the material etching rate VB can be changed in addition to the irradiation conditions by sensitization (UV irradiation before etching, influence of oxygen, solvent effects), targeted material processing can be carried out by selecting the irradiation, etching and possibly sensitization conditions.
  • ion trace membranes for filter purposes, i.a.
  • Polymer films for example made of polyesters or polyimides, are irradiated with heavy ions in such a way that the ions hit the film surface perpendicularly.
  • the selected bullet energy must ensure complete penetration of the film and the energy transfer per path (dE / dx) should be as constant as possible during the entire ion trajectory.
  • the subsequent etching process is optimized so that the resulting recesses have the shape of cylindrical channels of a defined diameter. An exact cylinder shape ensures that the channels of the filter membrane are not blocked during use and that the initial filtering speed is reached again after backwashing the filter residue.
  • EP 0583 605 A1 describes a method for producing such micropores by etching particle traces.
  • the documents DE 2916006 A1 and EP 0583605 A1 show the above-mentioned combination of heavy ion irradiation, subsequent etching and subsequent Coating of the carrier surface.
  • the following process steps for the production of adhesive metal layers on non-conductors without adhesion-promoting intermediate layers are disclosed: Irradiation of various dielectrics with heavy ions (mass> 10 and bullet energy> 0.1 MeV / amu), in particular under an oblique direction of incidence of the radiation until an undefined fluence is reached , The subsequent etching is carried out until the desired size of the holes is reached, thus leading to a defined surface roughening.
  • a "so-called zipper effect" of etched depressions reaching obliquely into the surface leads to an increase in the adhesive strength of a metal layer subsequently applied by conventional methods.
  • Extensive in-house investigations have shown that, although composites of carrier foil and metal layer with the desired adhesive strength (It. DIN> 0.8 N / mm) can be produced under laboratory conditions using the state-of-the-art methods, these have practical requirements, particularly insensitivity to the effects of moisture, not hold up. The reason for this is that the influence of moisture on the backing film loosens the existing "anchors" between the backing film and metal layer (moisture-induced sliding effects; "soft soap effect”) and therefore only provides a stable connection of the two components that is necessary for practical use.
  • the material to be irradiated is guided over a roller system with a deflection roller, a removal roller, a take-up roller and two fixing rollers during the irradiation.
  • the deflection roller is arranged on a rail in a height-adjustable manner in parallel in the direction of the spread of the ion beam.
  • the carrier foils can be aligned at two different angles to the direction of propagation of the ion beams in such a way that a surface-depth relief of latent ion traces results from the irradiation with heavy ions.
  • Material parts of the functional layer to be applied engage in these ion traces etched into recesses and thus anchor the functional layer in the carrier film.
  • the method described here represents the first imperfect beginnings of irradiation of carrier foils, in which the heavy ions can strike at different angles of incidence.
  • a method is known from US Pat. No. 4,416,724 with which the surface of a nonconductor is to be enlarged by irradiation with heavy ions, the latent ion traces which are created in this way being widened by an etching process following the irradiation.
  • the radiation takes place in a vacuum, the collimated heavy ion beam being partially influenced in its beam direction by a rotating grating and a magnetic deflection device. This allows the surface area of the non-conductor to be enlarged up to 1000 times its original surface area.
  • the radiation energy, the radiation density and the radiation medium are mentioned as parameters for generating a suitable surface porosity.
  • the object of the invention is therefore to develop a solution with which carrier foils can be processed in such a way that it is possible to apply passive or active layers to them in an extremely adhesive manner.
  • the technology to be developed is intended to replace the use of adhesion promoters and the mechanical or thermal surface treatment during or before the coating of the carrier films.
  • Irradiation and etching are carried out in such a way that recesses (pores and the like) are formed that do not penetrate a carrier film. In this way, a surface structure can be achieved which enables a subsequent adhesive coating.
  • the heavy ions must penetrate into the carrier material at at least two different angles of incidence.
  • the range of the ions, i.e. their penetration depth is changed according to the requirements by varying their bullet energy.
  • the different irradiation directions and sufficiently long etching ensure that a wide variety of surface depth reliefs can be created.
  • surface depth relief means that the structuring from the surface to a certain depth of the material means that the differences between surface and volume are blurred to a certain extent in the structured area.
  • the resulting relief is reminiscent of a fractal structure, which is characterized by the fractal dimension D with 2 ⁇ D ⁇ 3, where D grows from the surface and reaches the value 3 in volume when the volume is no longer influenced by the structuring.
  • the desired adhesive strength is not only brought about by mechanical action, but also by surface-physical forces, for example polarizations, dipole-dipole effects, van der Waals forces, etc. The latter are greatly reduced by the influence of moisture, but the mechanical adhesion remains unchanged.
  • An increase in the permanent adhesive strength in the above sense can be achieved by creating common intersections of recesses. A common intersection is to be understood as the meeting or crossing of two recesses.
  • radiation of the carrier material must also be provided here at least two different angles of incidence.
  • the fluence and direction of incidence of the heavy ions are selected so that a maximum number of overlapping or meeting volume units is created, inside which the latent ion traces are located.
  • the recesses which are formed by an etching process following the irradiation have what are known as common intersections.
  • Particularly high adhesive strength values are achieved if the irradiation and etching parameters are selected so that after the etching process Surface depth relief has formed, which has the fractal surface structure already described in the area near the surface and has recesses with frequently occurring common intersections in areas distant from the surface.
  • the required high-energy heavy ions are generated by accelerators.
  • Accelerators are usually designed so that high-energy heavy ions with discrete energy values are available. It is therefore normally necessary to use an additional device which is located in the beam guiding channel of the irradiation system, ie in front of the carrier material to be irradiated. With the aid of this device, it is possible to adjust the beam to a fixed energy value, which represents the ion entry energy value for the solid body to be irradiated (for example a polymer film).
  • a fixed energy value which represents the ion entry energy value for the solid body to be irradiated (for example a polymer film).
  • Such a device is referred to below as the braking module and can e.g. B. consist of thin metal foils.
  • this braking module is arranged in the direction of the propagation of the heavy ion beams in front of the roller system and thus also in front of the carrier material to be irradiated.
  • the entry energy which must be less than the energy value of the ions after leaving the accelerator, is achieved by the energy-rich ones Heavy ions lose energy during the penetration of thin metal foils.
  • a discrete, defined entry energy can be generated, which corresponds to the desired energy value for the solid to be irradiated.
  • the radiation technology there are two variants for implementing the above-mentioned method:
  • the angle of incidence with respect to the surfaces and the radiation relative to one another is kept constant, so that only the fluence and range of the heavy ion radiation have to be coordinated with one another to generate a maximum of intersections in a certain area of the carrier material.
  • the etching conditions of the irradiated material must be chosen so that an optimal shape of the recesses is formed.
  • An aspect ratio A i.e. the ratio of pore length to pore diameter should be aimed at> 3.
  • the present invention enables the production of composites from carrier material and cover layers without any adhesion promoter.
  • the composites are characterized by permanently high adhesive strength values, especially under the conditions of their contact with water or with aqueous solutions or with an atmosphere of high moisture content.
  • the adhesive strength of the applied layers can be further increased by overetching.
  • a preferred embodiment for an irradiation arrangement of the new method is characterized in that an ion track film is transported as a carrier film over a guide system and is arranged with an adjustable inclination angle + ⁇ or + ⁇ / - ⁇ 2 to the incident ion beams and thereby the ones guided with this inclination angle Flanks of the film web run symmetrically or asymmetrically to the longitudinal direction of the ion beams.
  • the symmetrically or asymmetrically constructed guide system can be designed as a roller system with a pre-positioned braking module for setting the ion entry energy and from a removal roller for the carrier film at the beginning of the processing path of the carrier film, a receiving roller for the irradiated carrier film at the end of the processing path, 2 indented and centered there are fixing rollers arranged above the level of the removal / and receiving roller and one deflection roller positioned above the level of the two fixing rollers and preferably centrally between the fixing rollers.
  • the deflection roller is arranged to be height-adjustable along a region of the axis of symmetry or parallel to the axis of symmetry of the roller system.
  • the braking module can be used in such a way that a corresponding entry energy value of the penetrating ions can be set for each special angle of incidence (e.g. for + ⁇ or for - ⁇ 2 ), in which the module consists of subcomponents with different thick braking foils is built up.
  • the braking module has films of different thicknesses over its longitudinal extent in order to ensure a desired entry value of the ions penetrating into the carrier material (2) for each angle of incidence + ⁇ der - ⁇ 2 .
  • the deflection roller is adjusted in height, for example, by its guidance on the rail.
  • FIG. 4 shows the schematic structure of an arrangement with a braking module for carrying out the irradiation process of a film
  • FIG. 5 shows an electron micrograph of a typical profile of a strongly jagged surface with a pronounced depth relief of a polyester ion trace film in a plan view.
  • FIG. 1.2 additionally shows the spatial representation of an intersection 4.1
  • a common intersection 4 includes the meeting or the crossing of two Understand recesses.
  • 2.1 contains the schematic representation of an irradiation mask 5.
  • the film 2 unwound or wound on the rollers 6 and 7 is passed twice under the mask 5; the ions 1.2. are blasted for each film pass under the entry angle ⁇ ⁇ .
  • Fig. 2.3 shows, based on a sectional plane, the schematic representation of the ion trajectories 1.1 with penetration of the mask 5 and penetration into the solid body 2.
  • the latent ion traces 3 arise before the subsequent etching process.
  • the subject of Fig. 2.3 is the schematic representation of the common intersection formation for a section plane.
  • FIG. 3 illustrates the graphical evaluation of an adhesive strength test of composites made of ion trace films 2 (polyimide) and copper as a function of Pore diameter of the ion trace foil.
  • the pull test was carried out immediately after taking the samples from an aqueous solution.
  • the relative porosity the ratio of etched to non-etched surface
  • the relative porosity the ratio of etched to non-etched surface
  • the greater the porosity the greater the number of common intersections and thus the adhesive strength. Since the diameter of the recesses also increases with increasing porosity, the probability for the formation of common intersections also increases. If the porosity is very large, caused by strong overetching, a reduction in the adhesive strength is again observed when certain porosity values are obtained, because recesses are also destroyed by the overetching effect.
  • FIG. 4 shows the schematic representation of an arrangement with a braking module for carrying out the irradiation process of a polyester film which is to be used as a carrier film of a flexible printed circuit board.
  • an ion trace foil 2 is carried out as a carrier foil of an adhesive layer made of copper for use as a starting material for flexible printed circuit boards.
  • the starting material which is in the form of a roll (width 50 cm), is guided through the ion beam 1 via a roll system of 5 rolls.
  • a braking module 13 is arranged in the direction of the propagation of the heavy ion beams 1.1, which is arranged orthogonally in front of the roller system 6, 7, 8, 9, 10, 12 in the direction of the propagation of the heavy ion beams 1.1 is provided, which is penetrated by the beam 1 and determines the entry energy of the ions into the film material.
  • the roller system constructed here symmetrically contains a removal roller 6 with the polyester film 2 and a recording roller 7 for the polyester film 2 after the irradiation has taken place. In between there are a first fixing roller 8, a deflecting roller 9 and a second fixing roller 10.
  • the ion beam 1 sweeps over the area between the two fixing rollers 8 and 10, it being possible for a partial area of the ion beam 1 to be masked out by an aperture 11.
  • the deflection roller 9 is displaceably arranged on a rail 12 parallel to the direction of the ion beam 1 and thereby makes it possible to vary the angle of incidence ⁇ of the ions relative to the surface normal between -70 ° and + 70 °.
  • the angle of incidence is set at 45 °.
  • the partial area in which the deflection roller 9 is located is hidden from the ion beam 1.
  • the angles of incidence -45 ° and +45 ° can be assigned.
  • the total radiation density (fluence) is 5 "10 7 cm " 2
  • the entry energy of the ions is 1.2 MeV / amu, which leads to an average range of 20 ⁇ m.
  • the irradiated foils 2 are then subjected to a 10 to 30 minute etching with 3 molar NaOH solution at a temperature of 80 ° C. This results in an etching of the latent ion traces 3 into cylindrical blind hole recesses with a diameter of 2 ⁇ m and a length of approximately 18-19 ⁇ m. This length is somewhat less than the penetration depth of the ions, since at the end of the ion trace the energy transfer to the polyester film 11 becomes so small that the trace can no longer be etched.
  • the length of this non-etchable section is approximately 5-10% of the total length of the ion track.
  • the actual copper layer with a thickness of 5 to 140 ⁇ m is then electrodeposited.
  • the copper-coated polyester film produced in this way is characterized by a high adhesive strength of the top layer (> 2 N / cm), achieved by mechanically anchoring it in the pores of the base material. It is well suited for use as a flexible printed circuit board with high mechanical alternating loads.
  • the processing is carried out using an ion track film with a high specific surface area as a carrier of an aluminum coating
  • a polyester film 2 consisting of polyethylene terephthalate (PETP), 23 ⁇ m thick, is subjected to irradiation with 40 Ar + ions 1.
  • PETP polyethylene terephthalate
  • the starting material in roll form width 50 cm
  • the angle of incidence ⁇ is set to ⁇ 30 °, ie the radiation is carried out successively at the angles + 30 ° and -30 ° relative to the surface normal of the film 2, the total radiation density being 5 »10 7 cm " 2
  • Entry energy of the ions is increased by means of the braking module 0.11 MeV / amu, which results in latent ion traces 3, the effective (etchable) length of which is approximately 7 ⁇ m.
  • the surface of the irradiated film 2 is then subjected to etching with a 5 molar NaOH solution at a temperature of 90 ° C. for 6 to 8 minutes, whereby the latent ion traces 3 form frustoconical caverns or blind holes with a depth of about 7 ⁇ m, resulting from the above-mentioned effective length.
  • the total area covered by recesses which is given by the product of the recess area and the total radiation density, is therefore approx.
  • etching process is continued until the through Recesses covered area arithmetically exceeds the available area by about 50%.
  • This process is called overetching and is characterized by a strong mutual overlap / overlap of the recesses.
  • a film is formed with a strongly jagged, surface and a pronounced A typical example is shown in Fig. 5.
  • the film 2 has an extremely high e specific surface. Their mechanical stability is preserved because the thickness of the formed area is only about a third of their total thickness.
  • the film formed in this way is steamed with aluminum at a working pressure of ⁇ 1 • 10 "1 mbar.
  • the duration of the steaming required to achieve a certain layer thickness must be determined experimentally.
  • the aluminum layer deposited in this way becomes not only adhesively bonded to the substrate, but also mechanically anchored in the recesses of the same.
  • Many practical applications of such Al-coated polymer films require a subsequent oxidation of the surface, whereby mechanical stresses arise in the Al2 ⁇ 3-Al ⁇ Oy-Al polymer layer system.
  • Al ⁇ Oy refers to a non-stoichiometric transition layer between the metal and the oxide, which is characterized by a continuous change in the oxygen content.
  • the oxide-transition layer-metal system is very adhesive, however the mechanical stresses are transferred to the metal-polymer composite. In conventional coated films, this leads to the layer peeling off the substrate (polymer). Due to the mechanical anchoring implemented here, the adhesive strength of the layer is increased so much that peeling due to surface oxidation is avoided. Likewise, the flexural strength of the product is improved so that it can be wound into a roll with a very small inner radius of curvature.
  • Such Al-vapor-coated and surface-oxidized foils can be used as the starting material for the production of electrolytic capacitors.

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  • Engineering & Computer Science (AREA)
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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne un procédé et un système pour traiter un matériau support par irradiation aux ions lourds et gravure successive, l'irradiation aux ions lourds étant effectuée de telle sorte qu'un faisceau (1) de rayonnement d'ions lourds (1.1) à grande énergie soit incident sur une surface porteuse (2) selon au moins deux angles différents. Selon l'invention, la fluence, l'énergie et la direction d'incidence des rayons d'ions lourds (1.1) sont choisies de telle sorte que l'on obtienne un maximum de traces d'ions latentes (3) se croisant ou se rencontrant et d'intersections des évidements (4) produits par un processus de gravure chimique consécutif à l'irradiation aux ions lourds.
EP03783928A 2002-07-24 2003-07-23 Procede et systeme pour traiter un materiau support par irradiation aux ions lourds et gravure successive Withdrawn EP1525334A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10234614A DE10234614B3 (de) 2002-07-24 2002-07-24 Verfahren zur Bearbeitung von Trägermaterial durch Schwerionenbestrahlung und nachfolgenden Ätzprozess
DE10234614 2002-07-24
PCT/DE2003/002533 WO2004015161A1 (fr) 2002-07-24 2003-07-23 Procede et systeme pour traiter un materiau support par irradiation aux ions lourds et gravure successive

Publications (1)

Publication Number Publication Date
EP1525334A1 true EP1525334A1 (fr) 2005-04-27

Family

ID=31196886

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03783928A Withdrawn EP1525334A1 (fr) 2002-07-24 2003-07-23 Procede et systeme pour traiter un materiau support par irradiation aux ions lourds et gravure successive

Country Status (5)

Country Link
US (1) US20050230353A1 (fr)
EP (1) EP1525334A1 (fr)
AU (1) AU2003258471A1 (fr)
DE (1) DE10234614B3 (fr)
WO (1) WO2004015161A1 (fr)

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AU2003258471A1 (en) 2004-02-25
WO2004015161A1 (fr) 2004-02-19
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US20050230353A1 (en) 2005-10-20
AU2003258471A8 (en) 2004-02-25

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