EP1489203A4 - PROCESS FOR GALVANIC COPPER, PHOSPHOROUS ANODE FOR GLAVANIC COPPERING AND USE OF COPPER SEMICONDUCTOR WAFERS WITH LITTLE PARTICULAR MATERIALS THEREOF - Google Patents

PROCESS FOR GALVANIC COPPER, PHOSPHOROUS ANODE FOR GLAVANIC COPPERING AND USE OF COPPER SEMICONDUCTOR WAFERS WITH LITTLE PARTICULAR MATERIALS THEREOF

Info

Publication number
EP1489203A4
EP1489203A4 EP02788678A EP02788678A EP1489203A4 EP 1489203 A4 EP1489203 A4 EP 1489203A4 EP 02788678 A EP02788678 A EP 02788678A EP 02788678 A EP02788678 A EP 02788678A EP 1489203 A4 EP1489203 A4 EP 1489203A4
Authority
EP
European Patent Office
Prior art keywords
copper plating
electrolytic copper
phosphorus
semiconductor wafer
particles adhering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02788678A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1489203A1 (en
Inventor
Akihiro Aiba
Takeo Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of EP1489203A1 publication Critical patent/EP1489203A1/en
Publication of EP1489203A4 publication Critical patent/EP1489203A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
EP02788678A 2002-03-18 2002-11-28 PROCESS FOR GALVANIC COPPER, PHOSPHOROUS ANODE FOR GLAVANIC COPPERING AND USE OF COPPER SEMICONDUCTOR WAFERS WITH LITTLE PARTICULAR MATERIALS THEREOF Withdrawn EP1489203A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002074659 2002-03-18
JP2002074659A JP4034095B2 (ja) 2002-03-18 2002-03-18 電気銅めっき方法及び電気銅めっき用含リン銅アノード
PCT/JP2002/012437 WO2003078698A1 (fr) 2002-03-18 2002-11-28 Procede de depot d'une couche de cuivre par galvanoplastie, anode contenant du phosphore destinee au depot d'une couche de cuivre par galvanoplastie, et plaquette semi-conductrice sur laquelle adherent peu de particules obtenue a partir de ce procede et de cette anode

Publications (2)

Publication Number Publication Date
EP1489203A1 EP1489203A1 (en) 2004-12-22
EP1489203A4 true EP1489203A4 (en) 2006-04-05

Family

ID=28035319

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02788678A Withdrawn EP1489203A4 (en) 2002-03-18 2002-11-28 PROCESS FOR GALVANIC COPPER, PHOSPHOROUS ANODE FOR GLAVANIC COPPERING AND USE OF COPPER SEMICONDUCTOR WAFERS WITH LITTLE PARTICULAR MATERIALS THEREOF

Country Status (7)

Country Link
US (2) US7374651B2 (ko)
EP (1) EP1489203A4 (ko)
JP (1) JP4034095B2 (ko)
KR (1) KR100682270B1 (ko)
CN (1) CN1268790C (ko)
TW (1) TWI227753B (ko)
WO (1) WO2003078698A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2450474A1 (en) * 2001-08-01 2012-05-09 JX Nippon Mining & Metals Corporation High purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said sputtering target
JP4076751B2 (ja) * 2001-10-22 2008-04-16 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP4011336B2 (ja) * 2001-12-07 2007-11-21 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
US7887603B2 (en) * 2002-09-05 2011-02-15 Jx Nippon Mining & Metals Corporation High purity copper sulfate and method for production thereof
US6982030B2 (en) * 2002-11-27 2006-01-03 Technic, Inc. Reduction of surface oxidation during electroplating
WO2006113816A2 (en) * 2005-04-20 2006-10-26 Technic, Inc. Underlayer for reducing surface oxidation of plated deposits
JP5119582B2 (ja) 2005-09-16 2013-01-16 住友電気工業株式会社 超電導線材の製造方法および超電導機器
JP2007262456A (ja) * 2006-03-27 2007-10-11 Hitachi Cable Ltd 銅めっきの陽電極用銅ボール、めっき装置、銅めっき方法、及びプリント基板の製造方法
WO2009057422A1 (ja) * 2007-11-01 2009-05-07 Nippon Mining & Metals Co., Ltd. 銅アノード又は含燐銅アノード、半導体ウエハへの電気銅めっき方法及びパーティクル付着の少ない半導体ウエハ
CN102485924B (zh) * 2010-12-06 2013-12-11 有研亿金新材料股份有限公司 一种集成电路用磷铜阳极的制备方法
JP5590328B2 (ja) * 2011-01-14 2014-09-17 三菱マテリアル株式会社 電気銅めっき用含リン銅アノードおよびそれを用いた電解銅めっき方法
JP5626582B2 (ja) * 2011-01-21 2014-11-19 三菱マテリアル株式会社 電気銅めっき用含リン銅アノードおよびそれを用いた電気銅めっき方法
CN105586630A (zh) * 2015-12-23 2016-05-18 南通富士通微电子股份有限公司 半导体封装中提升铜磷阳极黑膜品质的方法
CN107641821B (zh) * 2017-09-14 2019-06-07 上海新阳半导体材料股份有限公司 一种硫酸铜电镀液、其制备方法和应用及电解槽

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315538A (en) * 1980-03-31 1982-02-16 Nielsen Thomas D Method and apparatus to effect a fine grain size in continuous cast metals

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US2264287A (en) * 1939-01-18 1941-12-02 American Smelting Refining Metallurgical product and method of making same
US2923671A (en) * 1957-03-19 1960-02-02 American Metal Climax Inc Copper electrodeposition process and anode for use in same
US3708417A (en) * 1970-11-18 1973-01-02 Lavin R & Sons Inc Method of making a cast anode with hook
US5151871A (en) * 1989-06-16 1992-09-29 Tokyo Electron Limited Method for heat-processing semiconductor device and apparatus for the same
US6113771A (en) * 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
JP3303778B2 (ja) 1998-06-16 2002-07-22 三菱マテリアル株式会社 ０．２％耐力および疲労強度の優れた熱交換器用継目無銅合金管
JP3053016B2 (ja) * 1998-10-15 2000-06-19 日本電気株式会社 銅のメッキ装置及びメッキ方法
JP2001069848A (ja) 1999-09-06 2001-03-21 Seirei Ind Co Ltd 穀粒収穫機における排塵ダクト付穀粒タンク
US6632335B2 (en) * 1999-12-24 2003-10-14 Ebara Corporation Plating apparatus
JP4394234B2 (ja) * 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
US6527920B1 (en) 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6821407B1 (en) * 2000-05-10 2004-11-23 Novellus Systems, Inc. Anode and anode chamber for copper electroplating
JP2001323265A (ja) 2000-05-12 2001-11-22 Jiro Fujimasu 粘性土等の安定固化組成物
US6689257B2 (en) * 2000-05-26 2004-02-10 Ebara Corporation Substrate processing apparatus and substrate plating apparatus
US6531039B2 (en) * 2001-02-21 2003-03-11 Nikko Materials Usa, Inc. Anode for plating a semiconductor wafer
JP4076751B2 (ja) * 2001-10-22 2008-04-16 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP4011336B2 (ja) * 2001-12-07 2007-11-21 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
US6830673B2 (en) * 2002-01-04 2004-12-14 Applied Materials, Inc. Anode assembly and method of reducing sludge formation during electroplating
US20030188975A1 (en) * 2002-04-05 2003-10-09 Nielsen Thomas D. Copper anode for semiconductor interconnects

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315538A (en) * 1980-03-31 1982-02-16 Nielsen Thomas D Method and apparatus to effect a fine grain size in continuous cast metals

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; RASHKOV, S. ET AL: "Effect of grain size and the type of intergranular boundaries in phosphorus-containing copper on anodic dissolution in electrolytes for bright acid copper plating", XP002366600, retrieved from STN Database accession no. 88:80959 *
IZVESTIYA PO KHIMIYA , 10(2), 264-76 CODEN: IZKHDX; ISSN: 0324-0401, 1977 *
See also references of WO03078698A1 *

Also Published As

Publication number Publication date
JP2003268595A (ja) 2003-09-25
KR100682270B1 (ko) 2007-02-15
KR20040093133A (ko) 2004-11-04
US20080210568A1 (en) 2008-09-04
US7374651B2 (en) 2008-05-20
CN1509351A (zh) 2004-06-30
US20040149588A1 (en) 2004-08-05
TW200304504A (en) 2003-10-01
EP1489203A1 (en) 2004-12-22
CN1268790C (zh) 2006-08-09
JP4034095B2 (ja) 2008-01-16
US8252157B2 (en) 2012-08-28
WO2003078698A1 (fr) 2003-09-25
TWI227753B (en) 2005-02-11

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 20031210

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIKKO MATERIALS CO., LTD.

A4 Supplementary search report drawn up and despatched

Effective date: 20060220

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIPPON MINING & METALS CO., LTD.

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: JX NIPPON MINING & METALS CORPORATION

17Q First examination report despatched

Effective date: 20130123

STAA Information on the status of an ep patent application or granted ep patent

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Effective date: 20161112