MY166615A - Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method - Google Patents
Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating methodInfo
- Publication number
- MY166615A MY166615A MYPI2012700718A MYPI2012700718A MY166615A MY 166615 A MY166615 A MY 166615A MY PI2012700718 A MYPI2012700718 A MY PI2012700718A MY PI2012700718 A MYPI2012700718 A MY PI2012700718A MY 166615 A MY166615 A MY 166615A
- Authority
- MY
- Malaysia
- Prior art keywords
- electrolytic copper
- copper plating
- highly pure
- anode
- plating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrolytic Production Of Metals (AREA)
Abstract
PROVIDED ARE A HIGHLY PURE COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, A METHOD FOR MANUFACTURING THE SAME, AND AN ELECTROLYTIC COPPER PLATING METHOD USING THE HIGHLY PURE COPPER ANODE. THE HIGHLY PURE COPPER ANODE OBTAINS A CRYSTAL GRAIN BOUNDARY STRUCTURE HAVING A SPECIAL GRAIN BOUNDARY RATIO LσN/LN OF 0.35 OR MORE. LN IS A UNIT TOTAL SPECIAL GRAIN BOUNDARY LENGTH. LσN IS A UNIT TOTAL SPECIAL BOUNDARY LENGTH. BY HAVING THE CONFIGURATION DESCRIBED ABOVE, PLATING DEFECT CAN BE REDUCED BY SUPPRESSING THE OCCURRENCE OF THE PARTICLES, SUCH AS THE SLIME OR THE LIKE, WHICH ARE GENERATED ON THE ANODE SIDE IN THE PLATING BATH.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010077215A JP5376168B2 (en) | 2010-03-30 | 2010-03-30 | High purity copper anode for electrolytic copper plating, manufacturing method thereof, and electrolytic copper plating method |
Publications (1)
Publication Number | Publication Date |
---|---|
MY166615A true MY166615A (en) | 2018-07-17 |
Family
ID=44712199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2012700718A MY166615A (en) | 2010-03-30 | 2011-03-25 | Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130075272A1 (en) |
JP (1) | JP5376168B2 (en) |
KR (1) | KR20130018655A (en) |
CN (1) | CN102844472B (en) |
MY (1) | MY166615A (en) |
TW (1) | TWI534303B (en) |
WO (1) | WO2011122493A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5752736B2 (en) * | 2013-04-08 | 2015-07-22 | 三菱マテリアル株式会社 | Sputtering target |
JP5783293B1 (en) * | 2014-04-22 | 2015-09-24 | 三菱マテリアル株式会社 | Material for cylindrical sputtering target |
EP3506332B1 (en) * | 2017-12-29 | 2020-12-23 | Jeol Ltd. | Scanning electron microscope and analysis method |
TWI749818B (en) * | 2020-10-22 | 2021-12-11 | 元智大學 | Method for microstructure modification of conducting lines |
JP7315120B1 (en) * | 2021-09-02 | 2023-07-26 | 三菱マテリアル株式会社 | Terminal material with plated film and copper sheet for terminal material |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3403918B2 (en) * | 1997-06-02 | 2003-05-06 | 株式会社ジャパンエナジー | High purity copper sputtering target and thin film |
JP3859384B2 (en) * | 1999-03-08 | 2006-12-20 | 日鉱金属株式会社 | Rolled copper foil for flexible printed circuit board having excellent flexibility and manufacturing method thereof |
JP2001240949A (en) * | 2000-02-29 | 2001-09-04 | Mitsubishi Materials Corp | Method of manufacturing for worked billet of high- purity copper having fine crystal grain |
JP4123330B2 (en) * | 2001-03-13 | 2008-07-23 | 三菱マテリアル株式会社 | Phosphorus copper anode for electroplating |
KR100877923B1 (en) * | 2001-06-07 | 2009-01-12 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | Electrolytic copper plating method |
JP4076751B2 (en) * | 2001-10-22 | 2008-04-16 | 日鉱金属株式会社 | Electro-copper plating method, phosphor-containing copper anode for electrolytic copper plating, and semiconductor wafer plated with these and having less particle adhesion |
JP4011336B2 (en) * | 2001-12-07 | 2007-11-21 | 日鉱金属株式会社 | Electro-copper plating method, pure copper anode for electro-copper plating, and semiconductor wafer plated with these with less particle adhesion |
JP4064121B2 (en) * | 2002-02-13 | 2008-03-19 | 日鉱金属株式会社 | Electro-copper plating method using phosphorous copper anode |
US20030188975A1 (en) * | 2002-04-05 | 2003-10-09 | Nielsen Thomas D. | Copper anode for semiconductor interconnects |
CN101796224B (en) * | 2007-11-01 | 2014-06-18 | Jx日矿日石金属株式会社 | Copper anode or phosphorus-containing copper anode, method for electroplating copper on semiconductor wafer, and semiconductor wafer with particle not significantly deposited thereon |
JP4607165B2 (en) * | 2007-11-20 | 2011-01-05 | Jx日鉱日石金属株式会社 | Electro copper plating method |
CA2674403C (en) * | 2007-12-18 | 2012-06-05 | Integran Technologies Inc. | Method for preparing polycrystalline structures having improved mechanical and physical properties |
-
2010
- 2010-03-30 JP JP2010077215A patent/JP5376168B2/en active Active
-
2011
- 2011-03-25 US US13/637,842 patent/US20130075272A1/en not_active Abandoned
- 2011-03-25 CN CN201180018264.4A patent/CN102844472B/en active Active
- 2011-03-25 KR KR1020127021980A patent/KR20130018655A/en not_active Application Discontinuation
- 2011-03-25 WO PCT/JP2011/057450 patent/WO2011122493A1/en active Application Filing
- 2011-03-25 MY MYPI2012700718A patent/MY166615A/en unknown
- 2011-03-29 TW TW100110780A patent/TWI534303B/en active
Also Published As
Publication number | Publication date |
---|---|
US20130075272A1 (en) | 2013-03-28 |
TWI534303B (en) | 2016-05-21 |
JP2011208224A (en) | 2011-10-20 |
JP5376168B2 (en) | 2013-12-25 |
WO2011122493A1 (en) | 2011-10-06 |
KR20130018655A (en) | 2013-02-25 |
CN102844472A (en) | 2012-12-26 |
CN102844472B (en) | 2015-11-25 |
TW201202487A (en) | 2012-01-16 |
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