EP1434977A1 - Dispositif et procede de mesure diffusiometrique - Google Patents

Dispositif et procede de mesure diffusiometrique

Info

Publication number
EP1434977A1
EP1434977A1 EP02785122A EP02785122A EP1434977A1 EP 1434977 A1 EP1434977 A1 EP 1434977A1 EP 02785122 A EP02785122 A EP 02785122A EP 02785122 A EP02785122 A EP 02785122A EP 1434977 A1 EP1434977 A1 EP 1434977A1
Authority
EP
European Patent Office
Prior art keywords
detector
sample
optical device
measuring arrangement
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02785122A
Other languages
German (de)
English (en)
Inventor
Hans-Jürgen DOBSCHAL
Gunter Maschke
Jörg BISCHOFF
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss Microelectronic Systems GmbH
Original Assignee
Carl Zeiss Microelectronic Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Microelectronic Systems GmbH filed Critical Carl Zeiss Microelectronic Systems GmbH
Publication of EP1434977A1 publication Critical patent/EP1434977A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00Measuring polarisation of light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/211Ellipsometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection

Definitions

  • the invention relates to a measuring arrangement with an optical device into which a diverging beam of rays emanating from a sample is coupled, and further with a detector downstream of the optical device, which has a plurality of detector pixels arranged in one plane and which can be evaluated independently of one another, the Optic device spectrally split the diverging S (ray bundle in a first direction transverse to the direction of propagation of the ray bundle and direct it to the detector. Furthermore, the invention relates to a measuring method with the steps: directing a ray bundle onto a sample to be examined such that a diverging ray bundle from the sample !
  • Such a measuring arrangement is used, for example, in optical scatterometry, with both photometry (measuring the intensity of radiation coming from a sample as a function of, for example, the angle of reflection and / or the wavelength) and ellipsometry (measuring the state of polarization one of one Sample coming radiation depending on, for example, the angle of reflection and / or the wavelength) are methods of optical scatterometry. From the measured values obtained in these methods, which is also referred to as the optical signature of the sample, conclusions can be drawn about the examined sample by means of suitable methods.
  • DE 198 42 364 C 1 discloses a measuring arrangement and a measuring method of the type mentioned at the outset for ellipsometry, the sample to be examined being imaged into the detector plane by means of the optical device in order to carry out a spatially resolved measurement.
  • the object of the invention is a measuring arrangement of the type mentioned and a To further develop measurement methods of the type mentioned at the outset such that • a spectral and an angle-resolved scatterometric measurement can be carried out quickly on a sample.
  • the object is achieved in a measuring arrangement of the type mentioned at the outset in that the optical device also parallelises the beam before it hits the detector in a second direction transverse to the direction of propagation in such a way that adjacent beams of the beam incident on the detector are in the second direction Beams run parallel to each other.
  • the intensity of the radiation beam as a function of the drop angle and as a function of the wavelength can be detected simultaneously with a single measurement, which advantageously shortens the measurement time significantly.
  • a particular advantage of the measuring arrangement according to the invention is therefore that with a single measurement, angle-resolved and spectrally resolved information can be obtained without having to move parts mechanically during the measurement.
  • the measurement can thus be carried out extremely precisely and very quickly, which is particularly important with regard to process controls, e.g. in semiconductor manufacturing, is a big advantage.
  • the first and second directions are preferably perpendicular to the direction of propagation, it being particularly preferred that the first and second directions enclose an angle of 90 ° with one another. This advantageously ensures that the evaluation of the measurement data is facilitated since there is only a spectral dependency in the first direction, while there is only an angle dependency in the second direction.
  • the optical device completely parallelize the beam (and thus also in the first direction).
  • the spectral decomposition which in this case takes place in particular after the parallelization, can be carried out with great accuracy, so that the measuring accuracy of the measuring arrangement is extremely high.
  • a particularly preferred development of the measuring arrangement according to the invention consists in the fact that the optical device carries out the spectral decomposition in such a way that focusing in the plane of the detector pixels occurs in the first direction.
  • the individual spectral components are thus focused next to one another (or adjacent in the first direction) on the detector, as a result of which a very high resolution for the measurement as a function of the wavelength is achieved.
  • a cylinder mirror is particularly preferably provided in the measuring arrangement according to the invention for focusing.
  • the desired focus can thus be achieved in a simple manner and without generating color errors.
  • Cylinder mirror of the beam path are folded so that the measuring arrangement can be implemented compactly.
  • the optical device in the measuring arrangement according to the invention for spectral decomposition can be a dispersive element, such as e.g. a grating.
  • the desired spectral decomposition can only be carried out in the first direction.
  • the dispersive element is preferably designed as a reflective element, e.g. a reflective grating. This allows the beam path to be folded, making the measuring arrangement compact.
  • a combination of the cylindrical mirror for focusing with the reflective, dispersive element is of particular advantage, since a double folding of the beam path leads to a very small measuring arrangement.
  • an advantageous embodiment of the measuring arrangement according to the invention is that the optical device for parallelization comprises one, two or more mirrors, in particular one, two or more spherical mirrors.
  • the parallelization can be carried out without producing color errors which can occur when refractive elements are used for the parallelization. This leads to an improvement in measuring accuracy.
  • the dispersive element e.g. a grating is formed for spectral decomposition directly on the mirror surface of the mirror for parallelization, so that the desired functions of the optical device can be realized with a single optical element.
  • the dispersive element can be formed on one or more of the mirror surfaces of the mirrors, so that the space requirement of the measuring arrangement is less.
  • the optics device has a first optics module for parallelizing the coupled beam and a second optics module downstream of the first optics module for spectral decomposition.
  • the parallelization is carried out before the spectral division, since then the parallelization can be easily implemented without the generation of undesirable color errors (for example by using only mirror elements for parallelization).
  • the detector pixels are preferably arranged in rows and columns and the spectral decomposition takes place in the column direction, whereas the parallelization is carried out in the row direction.
  • the spectral decomposition can also be done in the row direction. In this case, the parallelization is then carried out in the column direction.
  • the detector can be preceded by a micropolarization filter which comprises a multiplicity of pixel groups, each of which has at least two (preferably three) analyzer pixels for ellipsometry with different main axis alignment and a transparent pixel for photometry.
  • a micropolarization filter which comprises a multiplicity of pixel groups, each of which has at least two (preferably three) analyzer pixels for ellipsometry with different main axis alignment and a transparent pixel for photometry.
  • exactly one pixel of the pixel groups is assigned to each detector pixel.
  • an ellipsometric measurement can also be carried out at the same time, with angle-resolved and spectrally resolved information also being able to be obtained with the ellipsometric measurement by means of a single measurement process. A large number of different measured values can thus be acquired by means of a single measuring process, which enables a very precise and fast measurement.
  • an illuminating arm can be provided in the measuring arrangement according to the invention, which generates a (preferably converging) beam for illuminating the sample to be examined and directs it in such a way that a diverging beam of rays emanates from the sample and is then coupled into the optical device for examination ,
  • a diverging beam of rays emanates from the sample and is then coupled into the optical device for examination
  • the illuminating arm can be arranged relative to the optical device as a function of the sample to be examined such that light or radiation reflected or transmitted by the sample is coupled into the optical device as a diverging beam. So you can always choose the arrangement that is best suited for the respective sample. It is also possible to arrange the illuminating arm in such a way that only one or more predetermined diffraction orders, if these occur, are coupled into the optics device only from the sample. Alternatively, of course, too the optical device can be arranged such that only the desired radiation is injected.
  • the grating vector of the sample section to be examined (the grating vector denotes the direction of the periodicity of the grating) lies in the plane of incidence (this is determined by the axis of the illuminating arm and the axis of the measuring arm, which has the optical device and the detector), there are possibly occurring ones Diffraction orders also on the plane of incidence.
  • the so-called conical diffraction takes place, in which all diffraction maxima with the exception of the zeroth order of diffraction (direct reflection) lie on an arc perpendicular to the plane of incidence.
  • Appropriate positioning of the sample e.g. by turning
  • the object is achieved by the measuring method according to the invention in that, in addition to the measuring method of the type mentioned at the outset, the diverging beam before it hits the detector is parallelized in a second direction transverse to the direction of propagation in such a way that the rays of the beams of rays striking the detector run parallel to one another.
  • An angularly resolved and spectrally resolved photometric measurement can thus be carried out by means of a single measuring process, without parts having to be moved mechanically. This increases both the measuring accuracy and the measuring speed.
  • a special embodiment of the measuring method according to the invention consists in that, depending on the sample to be examined, only a part of the detector pixels of the detector are evaluated. As a result, the measurement can be accelerated, since the detector pixels, the information of which is less meaningful, are not taken into account, so that an undesired slowdown in the measurement process can be prevented. As a result, the measuring method according to the invention becomes faster and still has a very high accuracy. This also enables fast and optimal measurement on different sample types.
  • a (preferably converging) beam with a defined polarization state can be directed onto the sample, in which case the light that strikes a part of the detector pixels is passed through analyzers, while the light that strikes the remaining detector pixels is not through the analyzers.
  • the beam is focused on the sample and then the beam reflected or transmitted by the sample is measured.
  • the size of the sample spot to be examined can then be adjusted via the focusing or possible defocusing of the incident beam.
  • FIG. 1 shows a schematic structure of a measuring arrangement according to the invention
  • FIG. 2 is a perspective view of the structure of the measuring arm of the measuring arrangement shown in FIG. 1;
  • Fig. 3 is a side view of the measuring arm of Fig. 2;
  • Fig. 4 is a view of the detector of the measuring arm
  • FIG. 5 shows an exploded view of a detail of the arrangement of the detector and micropolarization filter.
  • FIG. 1 schematically shows the structure of a measuring arrangement according to the invention for a combined angle-resolved and spectral reflection photometry.
  • An angle-resolved and spectral ellipsometry as will be described below in connection with FIG. 5, can preferably also be carried out simultaneously with the measuring arrangement.
  • the measuring arrangement comprises an illuminating arm 1 and a measuring arm 2.
  • the illuminating arm 1 contains a broadband light source 3, which emits radiation in the wavelength range from 250 to 700 nm, for example, a collimator 4 arranged downstream of the light source 3, which generates a parallel beam 5 with which one Illumination optics 6 is applied.
  • a polarizer 7 can be inserted between the collimator 4 and the illumination optics 6 (as indicated by the double arrow A), so that in this case the illumination optics 6 are exposed to polarized light.
  • the illumination optics 6 generate a converging beam 8 with which a sample 9 to be examined is illuminated.
  • the opening angle ⁇ of the beam 8 in the plane of incidence (here the plane of the drawing) is approximately 40 °, whereas the opening angle of the beam 8 in a plane perpendicular to the plane of incidence is preferably smaller (for example 10 ° to 25 °), but of course can also have the same value as the opening angle ⁇ .
  • the lighting arm 1 is tilted by approximately 50 ° (angle) with respect to the sample normal N, so that an angle of incidence range of 10 ° to 60 ° is covered with the beam 8 in the plane of incidence. As can be seen from Fig. 1, the two arms 1, 2 are arranged symmetrically to the sample normal N.
  • the converging beam 8, which impinges on the sample 9, is subject to an interaction with it (for example, it is diffracted on a periodic structure), and a diverging beam of rays emanating from the sample 9 is generated, from which the drawn, diverging beam 10 in the measuring arm 2 is coupled.
  • the measuring arm 2 is designed and arranged so that the diverging beam 10 corresponds to the beam that would be generated with a purely specular reflection (here essentially zero-order diffraction).
  • the opening angle ⁇ of the beam 10 is also about 40 ° in the plane of incidence, so that in the plane of incidence the angle of the beam of the diverging beam 10 is 10 ° to 60 °.
  • the direction of propagation C of the beam 10 is the direction of propagation of the central beam (this is the beam with the angle of reflection of 35 °).
  • the sample 9 and thus the periodic structure of the sample 9 to be examined can be oriented such that the lattice vector of the periodic structure is not in the plane of incidence. Then the conical diffraction occurs, in which only the zeroth diffraction order lies in the plane of incidence. In this way it can easily be achieved that only the zeroth diffraction order is evaluated.
  • the diverging bundle of rays 10 is coupled into an optic direction 11 of the measuring arm 2, the diverging bundle of rays 10 being parallelized on the one hand in the optic device 11 and spectrally broken down perpendicularly to the plane of the drawing on the one hand so that a dropping bundle of rays 12 is generated (the exact mode of operation of the optic device 11 will be described in detail below).
  • the beam of rays 12 generated in this way is then directed onto a flat detector 13 which comprises a multiplicity of detector pixels arranged in rows and columns, which can be evaluated or read independently of one another.
  • a CCD chip is used.
  • a micropolarization filter 14 which will be described in more detail later, can be inserted between the optical device 11 and the detector 13 (as indicated by the double arrow B).
  • FIGS. 2 and 3 An embodiment of the measuring arm 2 is shown in FIGS. 2 and 3, the plane of incidence being the plane of the drawing in FIG. 3.
  • the optical device 11 comprises an aperture 15 (which is only shown in FIG. 3), which limits the opening angle ⁇ of the beam 10 coupled into the optical device 11.
  • This is followed by a concave, spherical mirror 16 and a convex, spherical mirror 17, with which the diverging beam 10 is completely parallelized in such a way that adjacent rays of the parallelized beam 18 in the drawing plane of FIG. 3 as well as in a plane perpendicular to the drawing plane Adjacent rays of the parallelized beam 18 run parallel to one another. Due to the parallelization, the position of each beam in the drawing plane of FIG. 3 in the beam 18 is predetermined by the angle of reflection on the sample 9.
  • ⁇ 1 10 °
  • ⁇ 2 60 °
  • the two mirrors 16, 17 thus have the effect that the angle of reflection ⁇ of the beams in the diverging beam bundle 10 is converted into a position in the parallel beam bundle 18.
  • the diverging beam is therefore also parallelized in a first direction (in the plane of the drawing in FIG. 3) transverse to the direction of propagation C (the direction of the central beam).
  • the parallelized beam 18 is directed onto a reflection grating 21.
  • the reflection grating 21 is designed and arranged such that spectral decomposition takes place only perpendicular to the plane of FIG. 3 (second direction).
  • parallel beam tufts of one wavelength emanate from the grating 21 for each drop angle ⁇ , the drop angle of the parallel beam tufts having different values depending on the wavelength.
  • the detector 13 which is shown schematically in FIG. 4 and comprises the plurality of individually readable photo elements (detector pixels) 23 arranged in rows and columns, is arranged in the measuring arm 2 in such a way that the spectral decomposition in the direction of the columns (arrow Y) and the conversion of the exit angles ⁇ of the diverging beam 10 in the direction of the lines (arrow X) takes place.
  • the optical device 11 thus effects an imaging of the sample to infinity (the detector plane is not conjugated to the sample plane), the spectral decomposition being in the detector plane.
  • the detector 13 With the detector 13, an optical signature of the examined sample section is thereby detected, with an angular resolution in the row direction (X) and a wavelength resolution in the column direction (Y). Therefore, with the measuring arm 2 according to the invention, the intensity can be measured simultaneously as a function of the drop angle ⁇ and as a function of the wavelength ⁇ .
  • the elements of the measuring arm are arranged relative to one another in such a way that the following deflection angles (difference between incoming and reflected beam) occur in accordance with the guide beam principle.
  • the apex beam or central beam of the beam leaving the element serves as the input reference beam for the next component.
  • the grating 23 is a flat linear grating with a grating frequency of 500 lines / mm (one line is a complete structure period) and is arranged such that the angle of incidence on the grating is 11,824 ° with respect to the grating normal.
  • the deflection angle (in the sagittal direction) for a beam with a wavelength of 380.91 nm is 12.652 °.
  • the deflection angle of 20 ° given in table 2 on the cylinder mirror 22 is also related to the wavelength of 380.91 nm.
  • the illuminating optics 6 of the illuminating arm 1 can have two spherical mirrors (not shown) and an aperture (not shown) in an identical manner to the measuring arm 2, so that when a parallel beam 5 is applied, the desired converging beam 8 is generated.
  • the bundle diameter of the incident beam 8 on the sample 9 is preferably selected so that it illuminates at least some periods of the structure.
  • the period of such structures (such as, for example, lines spaced apart from one another, which should have a predetermined width and height and a predetermined flank angle when the process is carried out correctly) can be 150 nm, so that a bundle diameter of a few 10 ⁇ m is then sought.
  • the measured optical signature also changes, so that starting from the measured optical signature by known methods (such as neural networks) to the actual values of the desired parameters (such as line width, Line height, flank angle) can be inferred. It was found during the measurements that the sensitivity (i.e.
  • the changes in the optical signature as a function of a change in the parameter to be examined is not constant over the entire beam cross-section of the beam that strikes the detector 13 , but very much depends on the respective sample type (e.g. photoresist on silicon, etched silicon, etched aluminum) and the respective geometries (e.g. one- or two-dimensional repeat structures).
  • the individual pixel elements 23 of the detector 13 are shown as squares, the sensitivity as a function of the wavelength ⁇ and the drop angle ⁇ for a first sample type by contour lines 24, 25, 26, 27 and for a second sample type by contour lines 28, 29, 30, 31 is indicated.
  • the contour lines can be determined experimentally and / or theoretically.
  • the detector 13 When measuring the first type of sample, the detector 13 is preferably controlled such that only the pixel elements 23 lying within the contour line 24 are read out, while when measuring the second type of sample only the pixel elements 23 lying within the contour line 28 are read out. As a result, only the relevant pixel elements 23 can be detected and evaluated, so that the evaluation is not unnecessarily slowed down by the information of the remaining image pixel elements which is not so relevant.
  • Those in which individual image pixels can be selectively read out are preferably used as the detector 13. This can e.g. a CMOS image detector or also a CID image detector (charge injection device image detector).
  • the polarizer 7 is arranged in the lighting arm 1 in such a way that the beam bundle coupled into the lighting optics 6 is linearly polarized and thus has a defined or known polarization state.
  • the micropolarization filter 14 comprises a multiplicity of filter pixels 32, 33, 34, 35 arranged in rows and columns, each filter pixel 32, 33, 34, 35 being assigned to exactly one detector pixel 23, as in the schematic exploded illustration of a section of the detector 13 and Micropolarization filter 14 can be seen in FIG. 5.
  • Each 2 x 2 filter pixels form a pixel group 36, with three filter pixels 32, 33, 34 (eg fine metal grids that can be produced using known microstructuring techniques) of the pixel group 36 analyzers with different transmission or main axis directions (eg 0 °, 45 °, 90 °) for polarized radiation and the fourth filter pixel 35 is transparent.
  • the three analyzer pixels 32, 33, 34 associated detector pixels 23 can thus be detected, and the intensity can be measured with the fourth detector pixel 23, which is associated with the transparent filter pixel 35.
  • the resolution is thus reduced by a factor of 2 compared to the prescribed embodiment, but information about the changes in the polarization state is also obtained, so that spectral and angle-resolved ellipsometry can also be carried out simultaneously with a single measurement.
  • the distance between the sample 9 and the two arms 2 and 3 is preferably set such that the converging beam 8 on the sample 9 has the smallest possible diameter.
  • the converging beam 8 is thus focused as well as possible on the sample.
  • Sample 9 is further moved relative to the two arms 2 and 3, so that the measurement described in connection with the foregoing embodiments, for each point carried out>. , can be.
  • the spatial resolution is thus achieved by measuring separate points, since the individual measurements do not provide any spatially resolved information per se. This is because, in the measuring arrangement according to the invention, the measuring arm does not record an image of the examined sample location, but rather an integral optical signature (the optical signature averaged over the sample spot).
  • the movement of the sample 9 relative to the arms 2 and 3 is preferably carried out by means of a sample table (not shown) on which the sample 9 is held, with the sample table also the distance from the arms 2, 3 and thus the bundle diameter of the beam 8 on the sample 9 is adjustable.
  • both arms 2 and 3 can of course also be moved relative to sample 9, or it is also possible to combine both movements.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Spectrometry And Color Measurement (AREA)

Abstract

L'invention concerne un dispositif de mesure comprenant un dispositif optique dans lequel un faisceau de rayons (10) divergent, sortant d'un échantillon, est injecté à des fins de mesure. Ce dispositif de mesure comprend en outre un détecteur (13) monté en aval du dispositif optique et présentant une pluralité de pixels de détecteur qui sont placés sur un plan et peuvent être évalués indépendamment les uns des autres. Le dispositif optique (11) décompose spectralement le faisceau de rayons (10) divergent dans une première direction transversale à la direction de propagation du faisceau (10) et le dirige sur le détecteur (13). Le dispositif optique rend le faisceau parallèle avant même qu'il n'atteigne le détecteur (13), dans une deuxième direction transversale à la direction de propagation, de sorte que les rayons, adjacents dans la deuxième direction, du faisceau frappant le détecteur (13) sont parallèles les uns aux autres.
EP02785122A 2001-09-24 2002-09-18 Dispositif et procede de mesure diffusiometrique Withdrawn EP1434977A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10146945A DE10146945A1 (de) 2001-09-24 2001-09-24 Meßanordnung und Meßverfahren
DE10146945 2001-09-24
PCT/EP2002/010476 WO2003029770A1 (fr) 2001-09-24 2002-09-18 Dispositif et procede de mesure diffusiometrique

Publications (1)

Publication Number Publication Date
EP1434977A1 true EP1434977A1 (fr) 2004-07-07

Family

ID=7700040

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02785122A Withdrawn EP1434977A1 (fr) 2001-09-24 2002-09-18 Dispositif et procede de mesure diffusiometrique

Country Status (5)

Country Link
US (1) US20040196460A1 (fr)
EP (1) EP1434977A1 (fr)
JP (1) JP2005504314A (fr)
DE (1) DE10146945A1 (fr)
WO (1) WO2003029770A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080144036A1 (en) 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7463369B2 (en) * 2006-03-29 2008-12-09 Kla-Tencor Technologies Corp. Systems and methods for measuring one or more characteristics of patterned features on a specimen
DE102010040643B3 (de) 2010-09-13 2012-01-05 Carl Zeiss Ag Messvorrichtung zum optischen Erfassen von Eigenschaften einer Probe
DE102010041814B4 (de) 2010-09-30 2020-07-23 Carl Zeiss Ag Ellipsometer
JP6254775B2 (ja) * 2013-06-11 2017-12-27 浜松ホトニクス株式会社 エンコーダ
EP4230341A1 (fr) 2022-02-17 2023-08-23 Bystronic Laser AG Procédé et dispositif de découpage laser d'une pièce

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286843A (en) * 1979-05-14 1981-09-01 Reytblatt Zinovy V Polariscope and filter therefor
US4710642A (en) * 1985-08-20 1987-12-01 Mcneil John R Optical scatterometer having improved sensitivity and bandwidth
SE462408B (sv) * 1988-11-10 1990-06-18 Pharmacia Ab Optiskt biosensorsystem utnyttjande ytplasmonresonans foer detektering av en specific biomolekyl, saett att kalibrera sensoranordningen samt saett att korrigera foer baslinjedrift i systemet
US5166752A (en) * 1990-01-11 1992-11-24 Rudolph Research Corporation Simultaneous multiple angle/multiple wavelength ellipsometer and method
US5307210A (en) * 1990-05-03 1994-04-26 Board Of Regents, The University Of Texas System Beam alignment device and method
US5241369A (en) * 1990-10-01 1993-08-31 Mcneil John R Two-dimensional optical scatterometer apparatus and process
JPH07113533B2 (ja) * 1990-11-30 1995-12-06 浜松ホトニクス株式会社 光学的変形量測定装置
US5164790A (en) * 1991-02-27 1992-11-17 Mcneil John R Simple CD measurement of periodic structures on photomasks
EP0632256B1 (fr) * 1993-06-28 1998-08-26 International Business Machines Corporation Micropolarimètre, système à microcapteur et méthode pour caractériser des couches minces
US5412473A (en) * 1993-07-16 1995-05-02 Therma-Wave, Inc. Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices
US5608526A (en) * 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5703692A (en) * 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
CN1190702C (zh) * 1996-04-19 2005-02-23 富士写真胶片株式会社 胶片扫描器及其读出方法
US5877859A (en) * 1996-07-24 1999-03-02 Therma-Wave, Inc. Broadband spectroscopic rotating compensator ellipsometer
US5867276A (en) * 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
US5861632A (en) * 1997-08-05 1999-01-19 Advanced Micro Devices, Inc. Method for monitoring the performance of an ion implanter using reusable wafers
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
EP0950881A3 (fr) * 1998-04-17 2000-08-16 NanoPhotonics AG Méthode et dispositif pour l'ajustage automatique d'échantillons relativement à un ellipsomètre
US5989763A (en) * 1998-05-28 1999-11-23 National Semicondustor Corporation Chemical gas analysis during processing of chemically amplified photoresist systems
US6052188A (en) * 1998-07-08 2000-04-18 Verity Instruments, Inc. Spectroscopic ellipsometer
DE19842364C1 (de) * 1998-09-16 2000-04-06 Nanophotonics Ag Mikropolarimeter und Ellipsometer
WO2000035002A1 (fr) * 1998-12-04 2000-06-15 Semiconductor 300 Gmbh & Co. Kg Dispositif et procede de controle optique de processus de fabrication de surfaces microstructurees dans la production de semi-conducteurs
DE19914696C2 (de) * 1999-03-31 2002-11-28 Fraunhofer Ges Forschung Gerät zur schnellen Messung winkelabhängiger Beugungseffekte an feinstrukturierten Oberflächen
US7072034B2 (en) * 2001-06-08 2006-07-04 Kla-Tencor Corporation Systems and methods for inspection of specimen surfaces

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03029770A1 *

Also Published As

Publication number Publication date
US20040196460A1 (en) 2004-10-07
DE10146945A1 (de) 2003-04-10
WO2003029770A1 (fr) 2003-04-10
JP2005504314A (ja) 2005-02-10

Similar Documents

Publication Publication Date Title
DE69418248T2 (de) Optisches Laser-Abtastsystem mit Axikon
DE69203215T2 (de) Spektroskopisches Gerät und Verfahren.
EP0045321B1 (fr) Procédé et dispositif de mesure optique de distances
DE60030658T2 (de) Verfahren und Vorrichtung zur Überprüfung von Gegenständen
DE69033048T2 (de) System zur Positionsdetektion
DE69606450T2 (de) Wellenfrontenbestimmung mit Mikrospiegel zur Selbstreferenz und seine Justage
DE69021813T2 (de) Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen.
EP1166090B1 (fr) Dispositif permettant de mesurer rapidement la diffraction angle-dependante sur des surfaces finement structurees
DE102018205163A1 (de) Messvorrichtung zur Messung von Reflexionseigenschaften einer Probe im extremen ultravioletten Spektralbereich
DE10021378A1 (de) Optische Messanordnung mit einem Ellipsometer
DE10109929A1 (de) Vorrichtung zur Wellenfronterfassung
CH693968A5 (de) Verfahren und Vorrichtung fuer die Topographiepruefung von Oberflaechen.
WO2007051567A1 (fr) Système de mesure permettant de mesurer les zones limitrophes ou les surfaces de pièces d’usinage
DE19639939A1 (de) Optische Spektralmeßvorrichtung
DE69824021T2 (de) Spektrometer mit mehrfachdurchgang
DE19911671A1 (de) Schmalbandmodul-Prüfvorrichtung
EP1507137B1 (fr) Procédé et dispositif pour l'inspection dépendante de la polarisation et pour l'inspection par résolution spatiale d'une surface ou d'une couche
DE1964509A1 (de) Spektrophotometer
EP1434977A1 (fr) Dispositif et procede de mesure diffusiometrique
WO2024068294A1 (fr) Procédé de mesure pour réflectométrie euv, et réflectomètre euv
DE19510034B4 (de) Vorrichtung zur Bestimmung von Partikelgrößen und/oder Partikelgrößenverteilungen mittels Lichtbeugung
DE10146944A1 (de) Meßanordnung
DE1909841B2 (de) Spektrometer
DE102022110651B4 (de) Kompaktes optisches Spektrometer
DE102009021096A1 (de) Verfahren und Vorrichtung zum Bestimmen des Polarisationszustandes elektromagnetischer Strahlung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20030912

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

17Q First examination report despatched

Effective date: 20040623

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20041104