EP1428288B1 - Element de couplage pour une structure en ligne triplaque hf - Google Patents

Element de couplage pour une structure en ligne triplaque hf Download PDF

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Publication number
EP1428288B1
EP1428288B1 EP02742718A EP02742718A EP1428288B1 EP 1428288 B1 EP1428288 B1 EP 1428288B1 EP 02742718 A EP02742718 A EP 02742718A EP 02742718 A EP02742718 A EP 02742718A EP 1428288 B1 EP1428288 B1 EP 1428288B1
Authority
EP
European Patent Office
Prior art keywords
coupling element
stripline
finger
element according
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP02742718A
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German (de)
English (en)
Other versions
EP1428288A2 (fr
Inventor
Thomas Walter
Markus Ulm
Stefan Keith
Dirk Steinbuch
Mathias Reimann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1428288A2 publication Critical patent/EP1428288A2/fr
Application granted granted Critical
Publication of EP1428288B1 publication Critical patent/EP1428288B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters

Definitions

  • the invention is based on a coupling element for an HF stripline structure on an HF substrate.
  • finger couplers For DC decoupling of components in HF technology, in particular radar technology, so-called finger couplers or DC blocks are used. These elements are part of the stripline circuit, that is etched as a structure. The overlapping fingers pass the RF signal through a bandpass characteristic, but DC is blocked. This bandpass characteristic is essential for the function of the radar, since this prevents that low-frequency components of the drive pulse are forwarded. A simple serial capacity is therefore not sufficient.
  • the finger width of a coupler 1 is a function of the substrate and the line impedance.
  • the standard line impedance is 50 ohms by default, this is determined by the conductor width. Under the given parameters, for example, one would have a finger width of 90 ⁇ m and a gap of 60 ⁇ m. These dimensions, in FIG. 1 can not in a mass production process will be realized. Nevertheless, in order to realize this coupler, how FIG. 2 shows before and after the coupler 1, a line transformation 2 to a lower complex impedance performed, with the effect that finger width and gap increase to 200 microns and 120 microns and thus, as FIG. 2 shows are suitable for production.
  • an etched finger coupling structure is realized on the RF substrate by a discrete component on a silicon carrier and contacted via metallizations to the strip conductors of the RF stripline structure.
  • the solution according to the invention requires only a small additional expenditure and can be advantageously compatible with Pick & Place technologies, which are provided for other RF components on the stripline structure anyway designed.
  • the measures of the invention enable a meandering design of the finger coupler structure according to claim 2.
  • the contacting of the metallizations to the strip conductors is advantageously realized by spacers according to claim 3, which ensure a predetermined air gap between the silicon carrier and the RF substrate.
  • This embodiment can create more accurate processable conditions that can be taken into account in the dimensioning of the finger coupler structure.
  • FIG. 1 Known coupling element shown has a finger coupler structure 1, with two mutually parallel overlapping strip conductors in finger shape, each ending in pads 20.
  • the coupling takes place here essentially capacitively.
  • the overlapping fingers ensure a band characteristic for high-frequency signals, whereas DC components and low-frequency components are blocked.
  • the length of such a coupling element is 2.75 mm with a pad width of 0.638 mm.
  • FIG. 3 Fig. 12 shows a fragmentary layout of such a finger coupler structure within an RF stripline structure. As indicated above, a line transformation is necessary for the realization of such a coupling element in a mass production process.
  • FIG. 2 shows such a structure with line transformations 2. The total length thereby increases to 6.15 mm.
  • a stripline structure 4 is applied to a conventional RF substrate 5.
  • the finger coupler structure 1 which ensures the band-pass characteristic for RF signals, is implemented as a discrete component as a thin-film structure 6 on an HF-capable silicon carrier 7 per se. Because of the higher dielectric constant of silicon, for example, now results in a gap width of 50 microns and a finger thickness of 20 microns. Due to the thin film processes used in silicon wafers, conductor and gap dimensions of the order of 1 to 2 ⁇ m can be realized.
  • the finger length is shortened by the root of this amount and space is already saved hereby. Furthermore, since it remains in the 50 ohm system and no impedance transformations are required, the omission of the line transformations saves an additional 2.6 mm. Effectively, this reduced the coupler from 6.15 mm to 2 mm ( Fig. 5 ).
  • the simple structure of the coupling element which consists only of the carrier 7 and two simple metallizations (structure 6 and bumps 2) is to realize extremely inexpensive with a simple semiconductor process. These components are pulled on a reel and are equipped with regular machines for fitting with other components 10 are required anyway, automatically placed.
  • FIGS. 7 and 8 show the frequency response (frequency in GHz over attenuation in dB) of the coupling element in conventional implementation as well as realization according to the invention.
  • FIG. 7 is denoted by reference numeral 11 of the S11 parameters and 12 of the S21 parameters of the structure FIG. 2 shown.
  • reference numeral 13 the S11 parameter of the structure is after FIG. 1 and with 14 of the S21 parameters.
  • FIG. 8 shows by reference numeral 15 the S11 parameter of the structure according to the invention FIG. 5 and with 16 the S21 parameter.
  • the improved bandpass performance namely the higher bandwidth in the passband of the inventive structure, is evident.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Led Device Packages (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguide Connection Structure (AREA)

Claims (6)

  1. Elément de couplage pour une structure en ligne triplaque HF (4) sur un substrat HF (5) composé d'une structure de couplage inter-digitée (1), réalisée sous la forme d'une structure en couche mince (6) sur un support en silicium (7) et mise en contact par des métallisations (8) avec les chemins conducteurs en ligne de la structure en ligne triplaque HF (4).
  2. Elément de couplage selon la revendication 1,
    caractérisé en ce que
    la structure de couplage inter-digitée (1) est réalisée sous la forme de méandres.
  3. Elément de couplage selon l'une des revendications 1 ou 2,
    caractérisé en ce que
    les métallisations (8) sont prévues pour les chemins conducteurs en bande sous la forme d'organes d'écartement (9) assurant notamment, lors de l'application du support en silicium (7) sur les chemins conducteur en bande, un intervalle d'air prédéfini entre le support en silicium (7) et le substrat HF.
  4. Elément de couplage selon l'une des revendications 1 à 3,
    caractérisé par
    des pattes étalées pour réaliser le contact entre la structure de couplage inter-digitée (1) et les métallisations (8), à l'intérieur de la structure en couche mince (6).
  5. Elément de couplage selon l'une des revendications 1 à 4,
    caractérisé en ce que
    la structure en couche mince (6) est réalisée de façon compatible sur le support en silicium (7) pour des techniques de fabrication dites Pick & Place
  6. Application de l'élément de couplage capacitif selon l'une des revendications 1 à 5 comme filtre passe-bande pour des signaux haute-fréquence avec blocage simultané des composantes continues et basses fréquences, notamment pour des applications radar.
EP02742718A 2001-07-20 2002-05-07 Element de couplage pour une structure en ligne triplaque hf Expired - Lifetime EP1428288B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10134685 2001-07-20
DE10134685A DE10134685A1 (de) 2001-07-20 2001-07-20 Koppelelement für eine HF-Streifenleiterstruktur
PCT/DE2002/001639 WO2003012914A2 (fr) 2001-07-20 2002-05-07 Element de couplage pour une structure en ligne triplaque hf

Publications (2)

Publication Number Publication Date
EP1428288A2 EP1428288A2 (fr) 2004-06-16
EP1428288B1 true EP1428288B1 (fr) 2008-10-08

Family

ID=7692055

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02742718A Expired - Lifetime EP1428288B1 (fr) 2001-07-20 2002-05-07 Element de couplage pour une structure en ligne triplaque hf

Country Status (5)

Country Link
US (1) US6876268B2 (fr)
EP (1) EP1428288B1 (fr)
JP (1) JP2004537234A (fr)
DE (2) DE10134685A1 (fr)
WO (1) WO2003012914A2 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263701A (ja) * 1986-05-09 1987-11-16 Murata Mfg Co Ltd Ｄｃカツト回路
JPH0195601A (ja) * 1987-10-08 1989-04-13 Anritsu Corp ストリップ線路の直流阻止回路
US5216395A (en) * 1992-06-03 1993-06-01 The United States Of America As Represented By The Secretary Of The Army Quarter wave high voltage DC block covered with a polyurethane insulating layer
JPH06216613A (ja) * 1993-01-19 1994-08-05 Nippon Telegr & Teleph Corp <Ntt> マイクロ波結合線路
JP3331967B2 (ja) * 1998-06-02 2002-10-07 松下電器産業株式会社 ミリ波モジュール

Also Published As

Publication number Publication date
DE10134685A1 (de) 2003-02-06
US20040036549A1 (en) 2004-02-26
US6876268B2 (en) 2005-04-05
EP1428288A2 (fr) 2004-06-16
DE50212873D1 (de) 2008-11-20
JP2004537234A (ja) 2004-12-09
WO2003012914A3 (fr) 2003-04-24
WO2003012914A2 (fr) 2003-02-13

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