EP1428288A2 - Element de couplage pour une structure en ligne triplaque hf - Google Patents

Element de couplage pour une structure en ligne triplaque hf

Info

Publication number
EP1428288A2
EP1428288A2 EP02742718A EP02742718A EP1428288A2 EP 1428288 A2 EP1428288 A2 EP 1428288A2 EP 02742718 A EP02742718 A EP 02742718A EP 02742718 A EP02742718 A EP 02742718A EP 1428288 A2 EP1428288 A2 EP 1428288A2
Authority
EP
European Patent Office
Prior art keywords
coupling element
element according
finger
substrate
stripline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02742718A
Other languages
German (de)
English (en)
Other versions
EP1428288B1 (fr
Inventor
Thomas Walter
Markus Ulm
Stefan Keith
Dirk Steinbuch
Mathias Reimann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1428288A2 publication Critical patent/EP1428288A2/fr
Application granted granted Critical
Publication of EP1428288B1 publication Critical patent/EP1428288B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters

Definitions

  • the invention is based on a coupling element for an HF stripline structure on an HF substrate.
  • So-called finger couplers or DC blocks are used for the DC decoupling of components in HF technology, in particular radar technology. These elements are part of the stripline circuit, that is, etched as a structure.
  • the HF signal is passed through a bandpass characteristic due to the overlapping fingers, but DC voltage is blocked. This bandpass characteristic is essential for the function of the radar, since it prevents low-frequency components of the drive pulse from being passed on. A simple series capacity is therefore not sufficient.
  • the finger width of a coupler 1 is a function of the substrate and the line impedance.
  • the standard line impedance is 50 Ohm as standard, this is determined by the wire width. Given the given parameters, one would come up with a finger width of 90 ⁇ m and a gap of 60 ⁇ m, for example. These dimensions, shown in Figure 1, cannot in a mass production process will be realized.
  • a line transformation 2 to a lower, complex impedance is carried out before and after the coupler 1, with the effect that the finger width and gap increase to 200 ⁇ m and 120 ⁇ m, and thus how Figure 2 shows are suitable for production.
  • an etched finger coupling structure is realized on the HF substrate by a discrete component on a silicon carrier and contacted via metallizations to the strip conductors of the HF strip conductor structure.
  • the solution according to the invention requires only a slight additional effort and can advantageously be compatible Pick & place technologies that are intended for other HF components on the stripline structure anyway are designed.
  • the measures of the invention enable a meandering design of the finger coupler structure according to claim 2.
  • the contacting of the metallizations to the strip conductors is advantageously realized by spacers, which ensure a predetermined air gap between the silicon carrier and the HF substrate. This configuration allows more precise processable conditions to be created, which can also be taken into account when dimensioning the finger coupler structure.
  • FIG. 1 shows a known coupling element for an HF stripline structure
  • FIG. 2 shows a known coupling element for an HF stripline structure with line transformation
  • FIG. 3 shows the layout of an HF stripline structure with integrated finger coupler structure
  • FIG. 4 shows a section through a coupling element according to the invention
  • FIG. 5 shows a coupling element according to the invention in plan view
  • FIG. 6 shows a coupling element according to the invention in a meandering structure
  • the known coupling element shown in FIG. 1 has a finger coupler structure 1, with two overlapping strip conductors in the shape of a finger that run parallel to one another and each end in pads 20.
  • the coupling is essentially capacitive.
  • the overlapping fingers guarantee a band characteristic for high-frequency signals, where on the other hand DC components and low-frequency components are blocked.
  • the length of such a coupling element is 2.75 mm with a pad width of 0.638 mm.
  • FIG. 3 shows sections of the layout of such a finger coupler structure within an HF stripline structure. As shown at the beginning, a line transformation is necessary for the implementation of such a coupling element in a mass production process.
  • FIG. 2 shows such a structure with line transformations 2. The overall length thereby increases to 6.15 mm.
  • a stripline structure 4 is applied to a conventional HF substrate 5.
  • the finger coupler structure 1 which ensures the bandpass characteristic for RF signals, is in itself a discrete component as a thin-layer structure 6.
  • an HF-compatible silicon carrier 7 realized. Because of the higher dielectric constant of silicon, there is now, for example, a gap width of 50 ⁇ m and a finger thickness of 20 ⁇ m. Due to the thin-film processes used in silicon wafers, conductor and gap dimensions of the order of 1 to 2 ⁇ m can be realized.
  • the strip conductors of the HF strip conductor structure 4 are contacted with the finger coupler structure 1 via metallizations 8, which are in the form of spacers 9, so-called busses, between flat pads 20 of the component and the strip conductors 4 are provided.
  • These spacers 9 are seated on the strip conductor during gluing and set a defined distance of the discrete component with the finger coupler structure 1 from the HF substrate 5. This is important since the dimensions of the fingers are no longer dependent solely on the HF substrate and the line impedance, but also on the properties of the silicon and the air gap between the HF substrate 5 and the component. These dimensions and data are to be included in the 'development. The height of the air gap proves to be critical here. This is reproducibly set by the spacers.
  • the simple structure of the coupling element which consists only of the carrier 7 and two simple metallizations (structure 6 and bumps 2), can be implemented extremely inexpensively using a simple semiconductor process. These components are pulled on a reel and are with regular machines that to be equipped with additional components 10 are required anyway, can be placed automatically.
  • FIGS. 7 and 8 show the frequency behavior (frequency in GHz via attenuation in dB) of the coupling element in the case of a conventional implementation and in the implementation according to the invention.
  • FIG. 7 shows the S11 parameter with reference number 11 and the S21 parameter of the structure according to FIG. 2 with 12.
  • the Sll parameter of the structure according to FIG. 1 is shown with reference number 13 and the S21 parameter with 14.
  • FIG. 8 shows the SU parameter of the structure according to the invention according to FIG. 5 with reference number 15 and the S21 parameter with 16.
  • the improved bandpass behavior namely the higher bandwidth in the pass band of the structure according to the invention, is obvious.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguide Connection Structure (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un élément de couplage pour une structure en ligne triplaque HF (4) sur un substrat HF (5). Cet élément est réalisé sur un support de silicium (7) en tant que structure de couplage en forme de doigt (1) en technologie des couches minces. La mise en contact des bandes de ladite structure en ligne triplaque HF (4) est réalisée par des métallisations (8) en particulier sous forme d'entretoises (9).
EP02742718A 2001-07-20 2002-05-07 Element de couplage pour une structure en ligne triplaque hf Expired - Lifetime EP1428288B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10134685 2001-07-20
DE10134685A DE10134685A1 (de) 2001-07-20 2001-07-20 Koppelelement für eine HF-Streifenleiterstruktur
PCT/DE2002/001639 WO2003012914A2 (fr) 2001-07-20 2002-05-07 Element de couplage pour une structure en ligne triplaque hf

Publications (2)

Publication Number Publication Date
EP1428288A2 true EP1428288A2 (fr) 2004-06-16
EP1428288B1 EP1428288B1 (fr) 2008-10-08

Family

ID=7692055

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02742718A Expired - Lifetime EP1428288B1 (fr) 2001-07-20 2002-05-07 Element de couplage pour une structure en ligne triplaque hf

Country Status (5)

Country Link
US (1) US6876268B2 (fr)
EP (1) EP1428288B1 (fr)
JP (1) JP2004537234A (fr)
DE (2) DE10134685A1 (fr)
WO (1) WO2003012914A2 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263701A (ja) * 1986-05-09 1987-11-16 Murata Mfg Co Ltd Dcカツト回路
JPH0195601A (ja) * 1987-10-08 1989-04-13 Anritsu Corp ストリップ線路の直流阻止回路
US5216395A (en) * 1992-06-03 1993-06-01 The United States Of America As Represented By The Secretary Of The Army Quarter wave high voltage DC block covered with a polyurethane insulating layer
JPH06216613A (ja) * 1993-01-19 1994-08-05 Nippon Telegr & Teleph Corp <Ntt> マイクロ波結合線路
JP3331967B2 (ja) * 1998-06-02 2002-10-07 松下電器産業株式会社 ミリ波モジュール

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03012914A2 *

Also Published As

Publication number Publication date
WO2003012914A3 (fr) 2003-04-24
WO2003012914A2 (fr) 2003-02-13
US6876268B2 (en) 2005-04-05
US20040036549A1 (en) 2004-02-26
JP2004537234A (ja) 2004-12-09
EP1428288B1 (fr) 2008-10-08
DE50212873D1 (de) 2008-11-20
DE10134685A1 (de) 2003-02-06

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