EP1407541A2 - Circuit d'amplification a faible bruit - Google Patents

Circuit d'amplification a faible bruit

Info

Publication number
EP1407541A2
EP1407541A2 EP02782431A EP02782431A EP1407541A2 EP 1407541 A2 EP1407541 A2 EP 1407541A2 EP 02782431 A EP02782431 A EP 02782431A EP 02782431 A EP02782431 A EP 02782431A EP 1407541 A2 EP1407541 A2 EP 1407541A2
Authority
EP
European Patent Office
Prior art keywords
transistor
circuit
current path
emitter
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02782431A
Other languages
German (de)
English (en)
Inventor
Robert-Grant Irvine
Harald Pretl
Claus STÖGER
Wolfgang Thomann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1407541A2 publication Critical patent/EP1407541A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45386—Indexing scheme relating to differential amplifiers the AAC comprising one or more coils in the source circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45616—Indexing scheme relating to differential amplifiers the IC comprising more than one switch, which are not cross coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Definitions

  • Mobile radio standards using code multiple access methods such as -CDMA, ide-band code division multiple access, use high-frequency signals with a large dynamic range of, for example, 80 dB.
  • signals with low input levels have to be amplified with low-noise amplifiers before a frequency conversion.
  • a possible circuit implementation to achieve a switchable amplification by deriving part of the output current against supply voltage only leads to an insignificant increase in linearity, whereas the noise in the amplifier increases sharply.
  • a circuit with a transistor in an emitter circuit with a high desired amplification of the LNA could be used and a small amplification of the LNA with a separately constructed amplifier stage with a transistor in a basic circuit could be implemented.
  • the object of the present invention is to provide a low-noise amplifier which, because of the adjustability of the gain, is suitable for code multiple access methods and which offers a good possibility of noise and power adjustment.
  • the object is achieved with a low-noise amplifier circuit
  • a signal output for providing an amplified signal derived from the high-frequency signal, a first current path which connects the signal input to the
  • a switching device for activating the first or second signal path depending on a desired gain.
  • the described LNA (Low Noise Amplifier) structure offers switchability between two fixed amplification ratios and is therefore in principle suitable for amplifying W-CDMA signals with a high dynamic range.
  • the LNA can therefore be used in receivers in accordance with the UMTS mobile radio standard.
  • the signal branch with the transistor in the emitter circuit works with high amplification with very good efficiency and thus fulfills the linearity, amplification and noise requirements valid in this amplification range.
  • the current branch with the transistor in the base circuit is provided, in which a high linearity with low amplification can be achieved with a low current requirement.
  • the input impedance is almost real and corresponds to the reciprocal slope value, and the backward isolation is also very good.
  • the relatively poor noise characteristics of the basic circuit have little effect, since the basic circuit is used for low amplification and therefore there are high input levels at the signal input anyway. This reduces the signal-to-noise ratio, SNR, signal-to-noise ratio, only slightly.
  • the feedback between the collector and base connection of the transistor in the emitter circuit in the second current path causes a transconductance, that is to say compensation for the otherwise highly capacitive input impedance of the emitter circuit.
  • the series resistor, which is also provided, for coupling the cascode transistor to the transistor in the emitter circuit additionally effects voltage amplification, which further improves the circuit with regard to linearity, noise and efficiency. Since the emitter circuit has an inverting behavior, the feedback between the collector and the base of the transistor can be designed as a capacitive feedback, which acts like an inductor and thus compensates the actually capacitive input impedance to an almost real input impedance.
  • both the first and second current paths with the transistor in the base circuit and the one in the emitter circuit each have almost a real input impedance, which enables noise and power adaptation to a preceding stage in a simple manner.
  • the feedback branch of the transistor in the emitter circuit comprises a series circuit of resistance and capacitance.
  • any combination of resistors, capacitors and inductors can be used in the capacitive feedback branch, but a series connection of resistors and capacitors leads to particularly good results in terms of noise properties and amplification.
  • the first current path has a cascode stage which is connected downstream of the transistor in the basic circuit. In this way an increase in backward insulation can be achieved.
  • the current sources which supply the current paths are preferably designed to be switchable on and off. In this way, in addition to improved noise shadows, a lower power requirement can be achieved.
  • an oscillating circuit is provided which couples the two current paths on the signal output side to a supply potential connection and which can be designed to be narrowband.
  • the tunable coupling via an oscillatory system, English tank, leads to avoidance of a DC voltage drop in the supply voltage and thus to better voltage utilization of the amplifiers, and on the other hand the resonant circuit enables adaptation to usually capacitive loads without additional effort.
  • the narrow-band resonant circuit can be constructed, for example, with a coil with a center tap for connection to the supply voltage and capacitors. In addition, the narrow-band resonant circuit results in a slight gain in selectivity in the amplifier.
  • the transistor in the emitter circuit of the second current path is provided with an inductance which couples the emitter connection of the transistor to a reference potential connection.
  • inductive degeneration leads to improved linearity properties and to an improved adaptability of the input impedance with regard to power and noise.
  • the current mirror transistor can preferably be connected via resistors to the base connections of the transistors in the emitter circuit.
  • Figure 1 shows a first embodiment of a low noise amplifier according to the invention constructed in symmetrical circuitry
  • the first current branch 3 comprises the two bipolar transistors 5, 6, the base connections of which are connected to one another and can be connected to a fixed bias voltage source by means of a switch 9.
  • the connection for feeding in the bias voltage is designated by 10.
  • the emitter connections of the transistors 5, 6 are each coupled to the symmetrical signal input 1 via a series circuit comprising a capacitor 11, 12 and a resistor 13, 14, the capacitors 11, 12 being connected upstream of the resistors 13, 14 in the signal transmission direction.
  • a current source 15, 16, which is connected to reference potential, is also connected to the emitter terminals of transistors 5, 6 via a further switch 17, 18.
  • the collector connections of the transistors 5, 6 are coupled to the signal output 2, the signal lines for carrying the differential signal being crossed in the second current path in order to rule out a phase jump when switching between the first and second current paths.
  • a cascode stage 19 is optionally provided between the collector connections of the transistors 5, 6 and the signal output 2.
  • the second current branch 4 comprises a differential amplifier with a cascode circuit, which includes the two transistors 7, 8 operated in the emitter circuit and two further transistors 20, 21 operated in the base circuit.
  • the emitter connections of the transistors 20, 21 are each coupled to a collector connection of the transistors 7, 8.
  • the base connections of the transistors 7, 8, which are operated in an emitter circuit, are connected to the symmetrical signal input 1.
  • narrow-band radio frequency signals coded with code multiple access methods with a large dynamic range can be pre-amplified before downmixing with low noise, large amplification with a low signal level and overall good linearity properties.
  • the described LNA has good backward isolation and is therefore also suitable for the suppression of local oscillator leakage frequencies in homodyne receivers which do not have an image frequency suppressing filter.
  • the symmetrical structure of the LNA shown offers great immunity to interference.
  • the circuit according to FIG. 1 can be operated with a low power requirement. This enables use in mobile devices, for example mobile stations that work according to the UMTS standard.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un circuit d'amplification à faible bruit qui présente un rapport d'amplification réversible. A cet effet, il est prévu entre une entrée et une sortie de signaux (1, 2), un circuit parallèle comprenant un premier et un second parcours du courant (3, 4). Le premier parcours du courant (3) présente, pour amplifier les signaux, un transistor en montage à base commune et le second parcours du courant (4) présente, pour amplifier les signaux, un transistor en montage en émetteur commun, avec une adaptation d'impédance d'entrée (25, 27). En raison des bonnes propriétés qu'il présente en termes de bruit et de linéarité, le circuit d'amplification à faible bruit décrit est approprié pour être utilisé dans des récepteurs haute fréquence, dans lesquels la vaste plage dynamique du signal d'entrée, comme par exemple le SUTM, requiert toujours une préamplification adaptative avant un convertisseur de fréquence, c'est-à-dire dans la gamme de hautes fréquences.
EP02782431A 2001-07-06 2002-06-19 Circuit d'amplification a faible bruit Withdrawn EP1407541A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10132800 2001-07-06
DE10132800A DE10132800C1 (de) 2001-07-06 2001-07-06 Rauscharme Verstärkerschaltung
PCT/DE2002/002233 WO2003005566A2 (fr) 2001-07-06 2002-06-19 Circuit d'amplification à faible bruit

Publications (1)

Publication Number Publication Date
EP1407541A2 true EP1407541A2 (fr) 2004-04-14

Family

ID=7690836

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02782431A Withdrawn EP1407541A2 (fr) 2001-07-06 2002-06-19 Circuit d'amplification a faible bruit

Country Status (5)

Country Link
US (1) US7057457B2 (fr)
EP (1) EP1407541A2 (fr)
JP (1) JP2004534470A (fr)
DE (1) DE10132800C1 (fr)
WO (1) WO2003005566A2 (fr)

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US7298205B2 (en) * 2003-09-24 2007-11-20 Matsushita Electric Industrial Co., Ltd. Amplifier and frequency converter
US7071779B2 (en) * 2004-06-17 2006-07-04 Winbond Electronics, Corp. Monolithic CMOS differential LNA with enhanced linearity
US7454190B2 (en) * 2004-10-28 2008-11-18 Infineon Technologies Ag Receiver circuit for a receiving element
DE102005008372B4 (de) * 2005-02-23 2016-08-18 Intel Deutschland Gmbh Steuerbarer Verstärker und dessen Verwendung
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US8004365B2 (en) 2006-10-26 2011-08-23 Nxp B.V. Amplifier circuit
US7622989B2 (en) * 2007-04-30 2009-11-24 The Regents Of The University Of California Multi-band, inductor re-use low noise amplifier
US7592870B2 (en) * 2007-08-13 2009-09-22 Newport Media, Inc. Low noise, low power, high linearity differential amplifier with a capacitive input impedance
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US8427239B2 (en) 2011-09-02 2013-04-23 Renesas Mobile Corporation Apparatus and method for low noise amplification
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US8378748B2 (en) 2011-05-19 2013-02-19 Renesas Mobile Corporation Amplifier
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GB2490976A (en) * 2011-05-19 2012-11-21 Renesas Mobile Corp LNAs adaptable between inductively degenerated and internal impedance matching configurations
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CN103138725A (zh) * 2013-01-11 2013-06-05 华为技术有限公司 具有金属板电容的电路及射频开关、低噪声放大器
CN104639046A (zh) * 2013-11-06 2015-05-20 国基电子（上海）有限公司 低噪音放大器
CN104035105A (zh) * 2014-05-30 2014-09-10 深圳贝特莱电子科技有限公司 低噪声放大器及gnss系统接收机前端的射频系统
CN105281680B (zh) * 2015-10-19 2019-03-26 江苏卓胜微电子股份有限公司 带有开关的低噪声放大器及射频信号放大方法
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Also Published As

Publication number Publication date
DE10132800C1 (de) 2003-01-30
US20050068106A1 (en) 2005-03-31
WO2003005566A2 (fr) 2003-01-16
US7057457B2 (en) 2006-06-06
JP2004534470A (ja) 2004-11-11
WO2003005566A3 (fr) 2004-01-22

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