EP1399949A2 - Dispositif de nettoyage par voie humide de substrats en forme de disque - Google Patents

Dispositif de nettoyage par voie humide de substrats en forme de disque

Info

Publication number
EP1399949A2
EP1399949A2 EP02727587A EP02727587A EP1399949A2 EP 1399949 A2 EP1399949 A2 EP 1399949A2 EP 02727587 A EP02727587 A EP 02727587A EP 02727587 A EP02727587 A EP 02727587A EP 1399949 A2 EP1399949 A2 EP 1399949A2
Authority
EP
European Patent Office
Prior art keywords
guide
treatment
receiving
container
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02727587A
Other languages
German (de)
English (en)
Inventor
David Henson
Laurence Kohler
Jürgen LOHMÜLLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Wet Products GmbH
Original Assignee
Mattson Wet Products GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Wet Products GmbH filed Critical Mattson Wet Products GmbH
Publication of EP1399949A2 publication Critical patent/EP1399949A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the present invention relates to a device for wet cleaning disk-shaped substrates, in particular semiconductor wafers.
  • This device has the disadvantage that the wafers have to be collected into one batch each before their fine cleaning, as a result of which the continuous processing process of the wafers and thus the throughput are impaired.
  • the integration of the cleaning device in a CMP system which usually works in the single wafer process, is difficult.
  • the present invention is therefore based on the object of providing a device of the type mentioned at the outset which enables continuous cleaning of individual wafers in a simple and inexpensive manner.
  • this object is achieved by a device for wet cleaning of disk-shaped substrates, in particular semiconductor wafers, in that the device has at least one treatment container which can be filled with treatment fluid and has a guide for guiding at least one substrate in the container, a lifting device in the treatment container for inserting and removing a substrate, and a receiving device arranged above the treatment container with at least two separate advise guide means for respectively receiving a substrate on ⁇ has, wherein the guide means are slidable such that they are aligned with the guide in the treatment tank.
  • the receiving device arranged above the container has at least two separate guide devices for the respective receiving of a substrate, as a result of which one of the guide devices can be used in each case for guiding the substrates before wet cleaning and the other guide device in each case for guiding the substrates after wet cleaning. This ensures that the substrates are each inserted in a clean guide after wet cleaning.
  • the two separate guides increase the throughput of the device, since the rail for receiving the uncleaned wafers can be reloaded during the wet cleaning of a previous wafer in the treatment container, so that after the treated wafer has been lifted out of the treatment container and the guide devices have been displaced sideways a new wafer to be treated can be loaded into the treatment container immediately.
  • the wafer that has just been treated can be removed from the one guide device.
  • the guide devices can be displaced in such a way that they can be aligned with the guides in the treatment container in order to ensure problem-free loading and unloading of the wafers.
  • the receiving device has a bottom wall having at least one slot to form a chamber between an underside of the bottom wall and the treatment fluid, as a result of which the treatment area is separated from the receiving area.
  • the wafers can be dried in the chamber formed between the underside of the bottom wall and the treatment fluid.
  • a device for introducing a drying gas into the is preferably for good drying of the substrates Chamber provided.
  • the drying gas is preferably a gas which reduces the surface tension of the treatment fluid in order to achieve drying in accordance with the Marangoni effect. For a particularly good and rapid drying of the substrates, the drying gas is directed onto a meniscus formed between the substrate and the treatment fluid when the substrates are lifted out.
  • the chamber preferably has a low height of two to ten millimeters, which results in a very small chamber volume into which the drying gas is introduced. Due to the small chamber volume, the consumption of the drying gas can be greatly reduced.
  • the bottom wall is stationary with respect to the treatment container and the slot is aligned with the guide in the treatment container.
  • the treatment container is essentially permanently covered by the stationary bottom wall and protected against external contamination.
  • the receiving device advantageously has side walls which surround the guide devices in order to form an upwardly open chamber.
  • the side walls provide protection of the guide devices and the substrates accommodated therein against contamination and damage.
  • the chamber is open at the top to allow loading and unloading of the guiding devices.
  • a cover is provided which is arranged above the guide devices and can be moved laterally to enable access to the guide devices.
  • the cover protects the guide devices and the substrates arranged therein still further against contamination.
  • the lateral mobility of the access is strate to the guide means for loading and unloading the sub ⁇ possible.
  • the cover is preferably controllable in such a way that it is closed across the device when transporting objects, in particular wet substrates.
  • the lid is controlled such that when loading a not yet cleaned substrate the Füh ⁇ approximating means for receiving a cleaned substrate is covered to prevent contamination to said guide means.
  • the top of the lid is advantageously inclined with respect to the horizontal in order to promote the drainage of liquids located thereon.
  • a partition is provided between the guide devices.
  • the partition preferably has an alignment opening in order to be able to align a large number of devices for wet cleaning of disk-shaped substrates in a line.
  • the treatment fluid in the treatment container is preferably interchangeable.
  • FIG. 1 is a schematic perspective view of a cleaning system that includes a cleaning device according to the present invention
  • FIG. 2 shows a schematic sectional view through a cleaning device according to the present invention
  • FIG. 3 is a perspective view of a treatment basin according to the present invention
  • Fig. 4 is a plan view of a treatment tank according to the vorlie ⁇ constricting invention
  • FIG. 5 is a perspective view of a receiving device according to the present invention
  • 6 shows a plan view of a receiving device according to the present invention
  • Fig. 7 is a perspective view of the receiving device according to
  • FIG. 8 shows a perspective view from below of the receiving device according to FIG. 7; 9 is a perspective view of an alignment unit according to the present invention.
  • FIG. 1 shows a cleaning system 1 for semiconductor wafers 2, which adjoins a CMP system, for example, or forms a polishing and cleaning system together with the latter.
  • the cleaning system 1 has an input station 4, a coarse cleaning station 6, a fine cleaning station 8 and an output station 10.
  • the input station 4 has a receiving basin 12 which is filled, for example, with a liquid and is suitable for receiving at least one semiconductor wafer 2.
  • a handling device (not shown) is provided in order to pick up semiconductor wafers 2, for example from a CMP system, and to place them in the basin 12.
  • the semiconductor wafer is generally brought from a horizontal orientation to a vertical orientation, since the wafers 2 in the cleaning system 1 are continuously cleaned and held in a vertical orientation.
  • the coarse cleaning station 6 has first and second brush cleaning devices 14 and 15 which are arranged in series with respect to the receiving basin 12.
  • the brush cleaning devices 14, 15 have a structure as is known, for example, from DE-A-198 30 162, which goes back to the same applicant, to which reference is made in order to avoid repetitions.
  • a handling device is provided with a wafer gripper 19 eighteenth
  • the wafer gripper 19 is attached to a vertically extending rail 22 via a bracket 21, and can be moved vertically along the rail 22 by means of a suitable drive.
  • the verti ⁇ kale rail 22 is attached by suitable means to a horizontally extending rail 23 and horizontally through a suitable, not further shown driving movable along the rail 23rd
  • the substrate gripper 109 can be moved both horizontally and vertically via the bracket 21 and the rails 22, 23.
  • the fine cleaning station 8 has three wet cleaning devices 26 according to the invention, which are described in more detail below.
  • a further handling device 28 is provided for transporting the wafers 2 between the coarse cleaning station 6 and the fine cleaning station 8, which has essentially the same structure as the handling device 18.
  • the output station 10 has a wafer receptacle 30 in the form of a wafer cassette which is suitable for accommodating a large number of wafers. After cleaning, the wafers 2 are loaded one after the other into the wafer cassette 30 and then removed as a batch via a handling mechanism (not shown in more detail). Alternatively, it is of course also possible for the wafers 2 to be fed directly to another process after they have been cleaned, without having previously been collected as a batch.
  • a handling device 32 is provided for transporting the wafers 2 between the fine cleaning station 8 and the dispensing station 10, which again has essentially the same structure as the handling device 18.
  • Figure 2 shows a schematic sectional view by the wet cleaning device 26 according to the present invention, the section lying in the plane of a wafer 2 accommodated in the device 26.
  • the wafer 2 is shown once in the device 26 in a lowered position in the device and in a partially raised position, the raised position of the wafer being shown in dashed lines.
  • the wet cleaning device 25 has a lower wet treatment part 34 and a receiving part 36 arranged above it.
  • a drying section 38 is defined between the wet treatment part 34 and the receiving part 36, as will be described in more detail below.
  • the wet treatment part 34 has a treatment container 40 which can be filled with treatment fluid and has a bottom wall 41 and side walls 42. In the bottom wall 41 there is an inlet opening 43 for introducing treatment fluid, which is led via a line 44 to the treatment container 40. An adjustable valve unit 45 is arranged in line 44. The upper end of the side walls 42 serves as an overflow edge 46 for the treatment fluid located in the treatment container 40. An overflow 47, which is connected to a line 48, is arranged adjacent to the side walls 42 in order to discharge overflowing treatment fluid in a suitable manner. The treatment fluid can be exchanged during a treatment or between successive treatments. On the side walls 42, two opposite and mutually aligned guide rails 50 are provided, which can best be seen in FIGS. 3 and 4.
  • the guide rails 50 are arranged such that they vertically accommodated therein a wafer 2 in an orientation to the side walls 42 and run parallel to ⁇ against opposite side walls 52 of the specialistssbenzoiters 40th Alternatively, several guide rails can be provided in order to accommodate more than one substrate.
  • the treatment tank 40 is further hen 55 vorgese ⁇ having a so-called vertically movable knife 56 has a stroke device.
  • One of the ⁇ type lifting device is generally known in the art and is therefore not described in detail.
  • the receiving part 36 has a receiving hood 60 with an essentially rectangular box shape, as can best be seen in FIG. 5.
  • the hood 60 has end walls 62, side walls 64 and a cover 66.
  • gas inlet and outlet connections 68 are provided, via which, for example, a protective gas can be introduced or discharged into the hood 60.
  • the cover 66 is attached to the end walls 62 via suitable rails 70 and is displaceable parallel to the end walls 62 in order to selectively enable or block access to the interior of the hood 60 from above.
  • An upper surface 72 of the cover 66 is inclined with respect to the horizontal in order to allow liquid located thereon to drain off.
  • the incline is designed such that liquid is conducted away from an upper opening in the hood 60.
  • the hood 60 is received on a base element 76 of the receiving part 36, as can best be seen in FIG. 5.
  • the base element 76 itself can best be seen in FIGS. 7 and 8.
  • the base element 76 has a rectangular frame 78, in which a horizontally extending partition 80 is arranged.
  • the dividing wall 80 is arranged in the frame 78 such that a space 82 or 84 which is open upwards or downwards is formed above and below the dividing wall 80 by the frame 78 and the dividing wall 80, as best shown in FIGS Figures 7 and 8 can be seen.
  • the partition wall 80 has a slot 86 which is dimensioned such that it enables a semiconductor wafer to be passed through the slot, as indicated in FIG. 8 It can be seen in which a semiconductor wafer 2 partially shown through the slot 86 is shown.
  • the base element 76 can be fastened to the treatment basin 40 via corresponding fastening elements 88 and screws (not shown in more detail).
  • the fastening elements 88 each have elongated holes which allow the base element 76 to be precisely aligned with respect to the treatment basin.
  • the base element 76 is attached to the treatment container 40 such that the slot 86 in the partition 80 and the lateral guides 50 in the treatment basin 40 are aligned vertically, i.e. that a wafer 2 guided vertically through the slot 86 is received directly in the guides 50.
  • a wafer holding device 90 Arranged above the partition 80 is a wafer holding device 90, which is arranged at least partially in the space 82 which is open at the top. When the hood 60 is attached to the base element 76, the receiving device 90 is located inside the hood 60.
  • the receiving device 90 has first and second guide devices 92, 93, which are each formed by a pair of guide rails 94 and 95, respectively.
  • a partition 98 is arranged between the guide devices 92, 93 and is received in guide rails 99.
  • the guide rails 94, 95 and 99 are each attached to a common frame 100.
  • the frame 100 is formed from an upper U-shaped frame 102, a lower U-shaped frame 104 and vertical struts 106 extending therebetween.
  • the guide rails 94, 95, and 99 are each attached to the lower and upper U-frames 102, 104 by means of fastening screws.
  • the lower U-shaped frame 104 of the frame 100 has a flange 106, 107 on the side legs in the U-shape, which flange extends outward from the frame 104.
  • the flanges 106, 107 extend through respective recesses 110, 111 in the frame 78 of the base element 76.
  • the flange 106 is connected via a coupling element 114 and a sliding element 115 to a rail 117 which is attached to the outside of the frame 78 of the base element 76 ,
  • the flange 107 is similarly coupled to a rail attached to the base element 76, on which a drive (not shown in detail) is provided in order to displace the frame 100 within the base element 76.
  • the displacement of the frame 100 with respect to the base element 76 enables the first or second guide device 92 or 93 to be aligned with the slot 86 in the partition 80 of the base element 76.
  • FIGS. 5 and 7 show a sensor element 120 which is able to sense the presence of a wafer 2 in the guide device 92.
  • the sensor element 120 is attached to an inside of a side wall 64 of the hood 60.
  • a corresponding sensor element can also be provided on the opposite side wall 64 in order to sense the presence of a wafer 2 in the second guide device 93.
  • a gas line 122 is provided on opposite sides of the slot 86.
  • the lines 122 have a plurality of nozzles 124, via which - as will be explained in more detail below - a drying gas can be introduced into the chamber 84.
  • the gas is introduced into the respective gas lines 122 initiated.
  • the chamber 84 has a small height of 2-10 mm and preferably 5 mm.
  • FIG. 9 shows an alignment element 142 which can be inserted into the guide devices 92, 93 in order to align them.
  • the alignment element 142 has a main body part 144 which is rounded at the lower end like a semiconductor wafer.
  • the guide elements 145 are rounded in the lower area like a wafer and then extend straight up to allow long guidance within the guide rails 94 and 95, respectively.
  • a plate 146 extending perpendicular to the plane of the main body part 144 is fastened on an upper side of the plate-shaped main body 144.
  • the plate 146 carries two spaced flanges 147, 148 which extend parallel to the plane of the main body part 144.
  • Alignment openings 150 and 151 are respectively provided in the flanges 147, 148 and extend through the flange 147 and 148 exactly perpendicular to the plane of the main body part 144.
  • the two openings 150, 151 serve as a rear sight and grain and can be used in conjunction with a laser beam to align the guide rails 94, 95.
  • the wet treatment side 34 of the cleaning devices 26 are attached to a frame of the cleaning system 1, specifically in such a way that the respective guide rails in the different treatment basins define parallel receiving planes. Moreover ⁇ the wet treatment members 34 are arranged such that the treatment tank at an end wall 40 arranged ⁇ receiving rails 50 in one plane, are thereby gebil ⁇ between the receiving rails 50 Deten receiving spaces in a row.
  • a base element is in each case mounted on a wet treatment portion 34 76, in such a way that the slot verti cal ⁇ aligned 86 in the partition wall 80 with the respective guide rails 50 in the underlying treatment tank 40th
  • the respective frame frames 100 are then attached to the base elements 76.
  • the frame frames 100 can also be attached to the base element 76 beforehand.
  • the guide rails 94, 95 and 99 are pre-assembled on the frame.
  • alignment elements 142 are now inserted into the guide rails 94 and 95 in order to align them exactly with respect to a line which runs perpendicular to the plane of the guide rails 94 and 95. In this way it can be ensured that the guide rails of all holding devices are aligned evenly.
  • the alignment elements 142 can be removed. Finally, the hood 60 is attached to the base elements 76.
  • a semiconductor wafer 2 is loaded into the receiving container 12 of the input states 4 via a handling device, not shown. From there, the wafer 2 is picked up via the handling device 18 and loaded into the coarse cleaning device 14, where the wafer 2 is roughly pre-cleaned. After the rough cleaning, the wafer is picked up by the handling device 28 and either directly to one of the wet cleaning devices. lines conveyed or first loaded into the coarse cleaning device 15. That is, the coarse cleaning devices 14, 15 can be used sequentially or in parallel. The same applies to the wet cleaning devices 26, which can also be used sequentially or in parallel.
  • the respective cover 66 of the hood 60 of the wet treatment device 26 is controlled so that it is closed during the crossing.
  • the lids 66 can each be controlled to be in a closed state as long as access to the hood for loading or unloading wafers 2 is not necessary.
  • One of the hoods 60 of the wet treatment devices 26 moves.
  • the cover 66 of the hood 60 is partially open and the frame 100 is moved into a position in which the first guide device 92 lies below the opening.
  • the first guide device 92 is thus in In this receiving position of the first guide device 92, the second guide device 93 is in a position below the cover 66 of the hood 60.
  • the guide rails 95 of the second guide device 93 are in this position with the slot 86 of the partition wall 80 in the base element 76 aligned.
  • the wafer 2 is now loaded into the first guide device 92 and held therein by a suitable holding device, not shown in any more detail.
  • the handling device 28 is removed and the cover 66 of the hood 60 can be closed.
  • the in the benzoph ⁇ ter 40 meter 56 located located in an uppermost position, and is located directly below the wafer 2.
  • the retaining elements of the first Leonsein ⁇ 92 are released so that the wafer 2 in the guide rails 94 slides down and the knife 56 comes to rest.
  • the knife 56 is now lowered in the treatment container 40, as a result of which the wafer 2 moves through the slot 86 in the dividing wall 80 and is then received in the guide rails 50 in the treatment container 40.
  • the treatment container is filled with treatment fluid and is constantly flowed through from below with treatment fluid in order to clean the wafer 2.
  • treatment fluid for example, dionized water is used for cleaning.
  • the water flows out of the treatment tank 40 via the overflow edge 46 and is discharged through the lines 48.
  • the cleaning can be supported by various known measures, such as the application of megasound to the wafer 2.
  • other treatment fluids or cleaning fluids that are different in succession can also be introduced into the treatment container 40. After a specified cleaning time has elapsed, the liquid supply is stopped.
  • the wafers 2 are now slowly raised by the knife 56 and thereby lifted out of the treatment liquid.
  • a gas which reduces the surface tension of the treatment liquid is introduced into the space between the partition 80 and the surface of the treatment liquid via the gas lines 122 on the base part 76 and the nozzles 124 arranged therein.
  • the nozzles 124 are oriented such that they are directed towards a meniscus formed between the substrate 2 and the treatment liquid when it is lifted out.
  • the gas causes the wafers 2 to be dried according to the Marangoni principle when they are lifted out of the treatment liquid.
  • the wafer can be at a rate of examples play as 4 millimeters per second to be lifted from the treatment liquid out ⁇ .
  • the excavation speed is much slower.
  • the wafer 2 is completely lifted out of the treatment liquid and moved into the receiving part 36 while it is being dried in the above manner.
  • the frame 100 has the receiving part 36 displaced laterally in such a manner is that now the second guide means 93 wall with the slot 86 in the separation ⁇ aligned 80 and the first guide means 92 in turn is located in the receiving position. That is, another wafer 2 can be loaded into the first receiving device 92 during the wet treatment.
  • the wafer 2 When the wafer 2 is lifted out, the wafer 2 is therefore now inserted into the guide rails 95 of the second receiving device 93. Since these were not previously in contact with a wet yet contaminated wafer, there is no fear of contamination of the cleaned wafer 2.
  • the frame assembly 100 When the wafer 2 is completely accommodated in the second guide rails 95, it is fixed by holding devices (not shown in more detail).
  • the frame assembly 100 is again laterally displaced in order to align the first holding device 92 with the slot 86 in order to enable the loading of a new wafer 2 to be cleaned into the treatment container 40.
  • the cover 66 of the hood 60 is opened so far that the handling device 32 can remove the cleaned wafer from the guide device 93 and move it to the output station 10.
  • the provision of the two separate guide devices 92, 93 increases the throughput of the device, since during the wet treatment of a first wafer a second wafer can be loaded into the receiving device 90, which after removal of the first wafer and a lateral displacement of the receiving devices 92, 93 can be loaded into the treatment container 40.
  • the two separate Guide means that uncleaned wafer 2 is always approximately device 92 are loaded into the first Füh ⁇ , while the cleaned wafers are always loaded in the second guide means 93rd This results in a ⁇ Ver impurity, the wafer 2 is prevented by the guide rails 95, as they only come into contact with purified wafers 2. Any impurities present on the guide rails 94 do not interfere, since the wafers 2 are each cleaned in the treatment container 40 after contact with the guide rails 94.
  • the handling mechanism 28 is used to transport the only roughly cleaned substrates 2 - and can therefore be contaminated - the handling mechanism 32 only serves to transport the cleaned wafers 2, thereby contaminating the handling mechanism 32 and one of them outgoing contamination of the wafer 2 is prevented.
  • the cleaning devices 26 can also be used on their own and not in combination with the coarse cleaning devices shown. It is also possible, for example, to attach the hood 60 directly to a treatment container 40 without a base element 26 located in between. In this case, a partition wall of the partition wall could similarly extend between the side and end walls 80 of the hood 60, a skillet- on ⁇ and to form a drying chamber in the hood.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un dispositif de nettoyage par voie humide de substrats en forme de disque, notamment de plaquettes semi-conductrices, ledit dispositif étant conçu pour permettre un nettoyage en continu de plaquettes individuelles présentant l'avantage d'être simple et économique. Ce dispositif de nettoyage comporte au moins un récipient de traitement (40) pouvant contenir un fluide de traitement et pourvu d'un élément de guidage latéral (50) conçu pour recevoir un substrat (2) individuel dans ledit récipient (40), un dispositif de levage (55) se trouvant dans le récipient de traitement (40) et destiné à libérer ou introduire un substrat (2), ainsi qu'un dispositif de réception (36) disposé au-dessus du récipient de traitement et comportant aux moins deux dispositifs de guidage distincts (92, 93), chacun conçu pour loger un substrat (2), lesdits dispositifs de guidage (92, 93) pouvant coulisser de manière à être alignés avec l'élément de guidage (50) se trouvant dans le récipient de traitement (40).
EP02727587A 2001-05-10 2002-05-02 Dispositif de nettoyage par voie humide de substrats en forme de disque Withdrawn EP1399949A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2001122669 DE10122669A1 (de) 2001-05-10 2001-05-10 Vorrichtung zum Nassreinigen von scheibenförmigen Substraten
DE10122669 2001-05-10
PCT/EP2002/004781 WO2002091435A2 (fr) 2001-05-10 2002-05-02 Dispositif de nettoyage par voie humide de substrats en forme de disque

Publications (1)

Publication Number Publication Date
EP1399949A2 true EP1399949A2 (fr) 2004-03-24

Family

ID=7684259

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02727587A Withdrawn EP1399949A2 (fr) 2001-05-10 2002-05-02 Dispositif de nettoyage par voie humide de substrats en forme de disque

Country Status (3)

Country Link
EP (1) EP1399949A2 (fr)
DE (1) DE10122669A1 (fr)
WO (1) WO2002091435A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4300556A1 (fr) * 2022-06-27 2024-01-03 Siltronic AG Couvercle pour un module de nettoyage permettant de nettoyer un disque à semi-conducteur et procédé de nettoyage d'un disque à semi-conducteur dans une ligne de nettoyage

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Publication number Priority date Publication date Assignee Title
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH03116731A (ja) * 1989-09-28 1991-05-17 Dan Kagaku:Kk 半導体ウエハ用移送装置
KR100241292B1 (ko) * 1993-08-05 2000-02-01 다카시마 히로시 반도체 처리 시스템 및 그 실어옮김기구를 위한 위치맞춤방법 및 장치
DE19549487C2 (de) * 1995-01-05 2000-11-16 Steag Micro Tech Gmbh Anlage zur chemischen Naßbehandlung
DE19706072C1 (de) * 1997-02-17 1998-06-04 Steag Microtech Gmbh Pliezhaus Vorrichtung und Verfahren zum Behandeln von Substraten in einem Fluid-Behälter
DE19830162A1 (de) * 1998-07-06 2000-01-20 Steag Electronic Systems Gmbh Verfahren und Vorrichtung zum Reinigen von Substraten
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates

Non-Patent Citations (1)

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Title
See references of WO02091435A3 *

Also Published As

Publication number Publication date
WO2002091435A3 (fr) 2003-03-27
DE10122669A1 (de) 2002-12-12
WO2002091435A2 (fr) 2002-11-14

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