EP1394866A4 - METHOD FOR PRODUCING A COMPOSED GROUP III NITRIDE SEMICONDUCTOR COMPONENT - Google Patents

METHOD FOR PRODUCING A COMPOSED GROUP III NITRIDE SEMICONDUCTOR COMPONENT

Info

Publication number
EP1394866A4
EP1394866A4 EP02730877A EP02730877A EP1394866A4 EP 1394866 A4 EP1394866 A4 EP 1394866A4 EP 02730877 A EP02730877 A EP 02730877A EP 02730877 A EP02730877 A EP 02730877A EP 1394866 A4 EP1394866 A4 EP 1394866A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
compound semiconductor
iii nitride
nitride compound
manufacturing group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02730877A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1394866A1 (en
Inventor
Toshiya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of EP1394866A1 publication Critical patent/EP1394866A1/en
Publication of EP1394866A4 publication Critical patent/EP1394866A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
EP02730877A 2001-06-04 2002-06-03 METHOD FOR PRODUCING A COMPOSED GROUP III NITRIDE SEMICONDUCTOR COMPONENT Withdrawn EP1394866A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001167835 2001-06-04
JP2001167835A JP3812366B2 (ja) 2001-06-04 2001-06-04 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
PCT/JP2002/005431 WO2002099901A1 (en) 2001-06-04 2002-06-03 Method for manufacturing group-iii nitride compound semiconductor device

Publications (2)

Publication Number Publication Date
EP1394866A1 EP1394866A1 (en) 2004-03-03
EP1394866A4 true EP1394866A4 (en) 2007-01-03

Family

ID=19010163

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02730877A Withdrawn EP1394866A4 (en) 2001-06-04 2002-06-03 METHOD FOR PRODUCING A COMPOSED GROUP III NITRIDE SEMICONDUCTOR COMPONENT

Country Status (7)

Country Link
US (1) US7101780B2 (zh)
EP (1) EP1394866A4 (zh)
JP (1) JP3812366B2 (zh)
KR (1) KR100538199B1 (zh)
CN (1) CN1263172C (zh)
TW (1) TW560088B (zh)
WO (1) WO2002099901A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3812366B2 (ja) 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR100585919B1 (ko) * 2004-01-15 2006-06-01 학교법인 포항공과대학교 질화갈륨계 ⅲ­ⅴ족 화합물 반도체 소자 및 그 제조방법
US7557380B2 (en) 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
KR100770491B1 (ko) * 2005-03-16 2007-10-25 최운용 플라즈마 처리를 통한 광반도체 투명 전극 제조
JP4952534B2 (ja) * 2007-11-20 2012-06-13 三菱電機株式会社 窒化物半導体発光素子の製造方法
JP5258275B2 (ja) * 2007-12-07 2013-08-07 三菱電機株式会社 窒化物半導体装置およびその製造方法
JP2011204959A (ja) * 2010-03-26 2011-10-13 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体発光素子
JP5554739B2 (ja) * 2011-03-23 2014-07-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP5879134B2 (ja) * 2012-01-17 2016-03-08 スタンレー電気株式会社 半導体発光素子の製造方法
US20150037917A1 (en) * 2012-04-24 2015-02-05 Panasonic Corporation Method for manufacturing light-emitting element
JP6206159B2 (ja) * 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1041650A2 (en) * 1999-03-31 2000-10-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
GB2351605A (en) * 1999-06-08 2001-01-03 Agilent Technologies Inc Method of forming light transmissive contact of a light source

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620926B2 (ja) 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
US6121127A (en) 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
US6291840B1 (en) 1996-11-29 2001-09-18 Toyoda Gosei Co., Ltd. GaN related compound semiconductor light-emitting device
JP3344257B2 (ja) 1997-01-17 2002-11-11 豊田合成株式会社 窒化ガリウム系化合物半導体及び素子の製造方法
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JP3427732B2 (ja) 1998-06-17 2003-07-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
TW386286B (en) * 1998-10-26 2000-04-01 Ind Tech Res Inst An ohmic contact of semiconductor and the manufacturing method
KR100525494B1 (ko) * 1999-04-26 2005-11-01 샤프 가부시키가이샤 Ｐ형 ⅲ족 질화물 반도체층 상의 전극 구조 및 그의 제조방법
JP3705016B2 (ja) 1999-06-28 2005-10-12 豊田合成株式会社 透光性電極用膜及びｉｉｉ族窒化物系化合物半導体素子
CN1203596C (zh) * 2000-02-16 2005-05-25 日亚化学工业株式会社 氮化物半导体激光元件
JP3812366B2 (ja) 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1041650A2 (en) * 1999-03-31 2000-10-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
GB2351605A (en) * 1999-06-08 2001-01-03 Agilent Technologies Inc Method of forming light transmissive contact of a light source
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02099901A1 *

Also Published As

Publication number Publication date
TW560088B (en) 2003-11-01
US7101780B2 (en) 2006-09-05
JP3812366B2 (ja) 2006-08-23
KR100538199B1 (ko) 2005-12-22
US20040175912A1 (en) 2004-09-09
CN1263172C (zh) 2006-07-05
JP2002368270A (ja) 2002-12-20
EP1394866A1 (en) 2004-03-03
KR20040007646A (ko) 2004-01-24
WO2002099901A1 (en) 2002-12-12
CN1513211A (zh) 2004-07-14

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