EP1354352A2 - Dispositif de refroidissement et son procede de production - Google Patents

Dispositif de refroidissement et son procede de production

Info

Publication number
EP1354352A2
EP1354352A2 EP01971879A EP01971879A EP1354352A2 EP 1354352 A2 EP1354352 A2 EP 1354352A2 EP 01971879 A EP01971879 A EP 01971879A EP 01971879 A EP01971879 A EP 01971879A EP 1354352 A2 EP1354352 A2 EP 1354352A2
Authority
EP
European Patent Office
Prior art keywords
cooling device
substrate
heat
channels
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01971879A
Other languages
German (de)
English (en)
Inventor
Wilfried Hofmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NFT Nanofiltertechnik GmbH
Original Assignee
NFT Nanofiltertechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10041829A external-priority patent/DE10041829B4/de
Application filed by NFT Nanofiltertechnik GmbH filed Critical NFT Nanofiltertechnik GmbH
Publication of EP1354352A2 publication Critical patent/EP1354352A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0077—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements
    • F28D2021/0078—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements in the form of cooling walls

Definitions

  • the invention relates to a cooling device and a method for its production, and in particular to a passive cooling device for cooling electrical and electronic components.
  • electrical and electronic components such as Microprocessors
  • a loss of power occurs that limits or deteriorates the performance of such units.
  • the clock frequency can be increased by more than 30%.
  • failures occur due to overheating. Overheating such components also significantly reduces their lifespan.
  • passive and active cooling devices e.g. Heatsink with fins and / or fan with motors.
  • blower should be as low as possible Weight so that the circuit board is not mechanically loaded, which can lead to cracks in fine conductor tracks.
  • Active cooling devices such as blowers, have several disadvantages. For example, they need electrical energy, take up more space, cause noise and cause relatively high acquisition and later also operating costs. If the active cooling device fails, the component (eg the processor) heats up quickly and unnoticed, so that it is damaged or even destroyed.
  • Heat pipe structures are devices that are used to dissipate heat from one place of production to another.
  • a liquid with high latent heat of vaporization evaporates in the hot area of the arrangement.
  • the pressure created during evaporation drives the steam to the cold part of the arrangement. There the steam condenses into the liquid phase and releases the transported heat again.
  • DE 197 44 281 AI describes a cooling device for cooling semiconductor components according to the heat pipe principle, that is also a heat pipe structure with a housing which has a plurality of capillary structures saturated with cooling liquid, the permeability, cross-sectional area and effective pore diameter of which is set such that a high capillary pressure arises. Additional channels are provided within the housing, which have a larger cross-sectional area than the capillary structure, so that the channels have a significantly lower capillary pressure than the capillary structure.
  • DE 19641731 AI describes a device for cooling at least two electrodes having arc generators, of which at least one electrode is assigned a porous heat sink.
  • the porous heat sink is designed as a sintered body, which is either pressed into a mold and inserted into the anode, or is machined. Inside the sponge-like porous heat sink are fine channels, within which a gas flows. The heat sink is used there so that the heat is supplied to the combustion process, so that the
  • Tungsten is proposed as a particularly suitable material for this heat sink.
  • the object of the invention is to provide a cooling device which avoids the above disadvantages of the prior art and is inexpensive to produce with good cooling performance. It is a further object of the invention to provide a method for producing such a cooling device.
  • the basic principle of the invention is that the cooling device is a substrate with a predetermined structuring and with a large surface in relation to its projection surface.
  • a heat-conducting layer is preferably applied to at least part of the surface of the structured substrate.
  • the predetermined structuring of the substrate preferably includes a multiplicity of channels with a suitable geometry, which preferably extend through the thickness of the substrate, so that the heat dissipation area is greatly enlarged in relation to the heat introduction area and can certainly take orders of magnitude up to a factor of 700 and more .
  • the specified structuring relates to the shape, size, number and spatial distribution of the channels, which, in contrast to the sintered body of the prior art, is clearly predetermined and reproducible, so that all the cooling devices of the invention also reproducible
  • the master patent solves this problem in that the heat dissipation area is significantly larger than the heat introduction area due to a predetermined structuring.
  • Structuring is preferably formed there by channels which extend through the substrate. Some or all of the surfaces there can preferably be provided with a heat-conducting coating.
  • the present additional application improves the solution according to the parent patent in that the heat dissipation area is further increased by the fact that it has a rough surface.
  • This is preferably done by applying small particles made of a material with a good thermal conductivity coefficient, which can be done directly on the structured substrate or on the thermally conductive coating.
  • the particles are on the order of a few ⁇ m or smaller down to the range of a few nanometers (nm).
  • Such particles with heat conduction properties can
  • AI Cu, Ag, Au or also consist of metal oxides, such as Iron oxide. Instead of individual particles, a porous, sponge-like thin oxide layer can also be applied.
  • the manufacturing process includes the step:
  • the substrate is made of silicon or similar material.
  • the structuring of the substrate is carried out using etching methods as are known within the semiconductor industry.
  • the structuring and in particular the formation of channels is carried out in a precisely defined manner, for example by specifying the number, dimensions, geometry and spatial arrangement or spatial distribution of the channels.
  • a ratio of the heat dissipation area to the heat introduction area of 400 to 700 and more can be achieved, i.e. for an area of 1 cm 2 of a heat source (heat introduction area) there is an area of 400 to 700 cm 2 and more for the radiation of the heat available. This allows a very large amount of heat to be dissipated very easily from a heat source.
  • the heat-conducting layer is made of material with high thermal conductivity, e.g. Silver, copper, aluminum or the like. This layer is thin in relation to the thickness of the substrate, and preferably the ratio is less than 50%.
  • the heat introduction surface is also structured, preferably in the form of channels running parallel to this surface, which can be in flow connection with the channels extending through the thickness of the substrate.
  • FIG. 1 shows a perspective view of a cooling device according to a first exemplary embodiment of the invention
  • FIG. 3 is a perspective view similar to Figure 1 according to a second embodiment of the invention.
  • FIG. 4a and 4b show a perspective view similar to FIG. 3 with vertical channels with different cross sections;
  • FIG. 5 is a perspective view of a cooling device according to the invention.
  • Fig. 6 is a schematic cross section of a substrate according to the invention with inclined channel walls.
  • the substrate 1 shows a substrate 1 which has a multiplicity of channels 2 which extend through the thickness of the substrate 1.
  • the substrate here is a cuboid body, one surface of which has a layer 3 of thermally conductive material. This area is referred to below as the heat introduction area. It is in direct contact with an object 6 to be cooled, which can be, for example, a microprocessor, a chip, another electronic or electrical component or else another body to be cooled.
  • the substrate 1 consists, for example, of silicon or a similar material.
  • the structuring of the substrate in this case the production of the channels 2, is carried out with the aid of suitable lithography and etching processes, as are used in the semiconductor industry.
  • the structure formation can take place in a precisely defined manner, for example by specifying the number, dimensions and arrangement or spatial distribution of the channels 2. By choosing the parameters, a ratio of heat dissipation area to heat introduction area of 400 to 700 and more can be achieved.
  • the heat dissipation surface here is not only the surface 4 of the substrate, but primarily the much larger inner surface of the channels 2. These inner surfaces, the surface 4 and the side surfaces with the exception of the heat introduction surface form the heat dissipation surface.
  • the substrate provided with the thermally conductive layer 3 is preferably attached to the heat source 6 using a thermally conductive connection, for example with a thermally conductive adhesive.
  • the heat-conducting connection can, but does not have to be formed with the same material as the heat-conducting layer.
  • the diameter of the channels 2 is very small in relation to the heat introduction area and is preferably in the order of 10-50 ⁇ .
  • the ratio of the heat dissipation area to the heat introduction area is significantly greater than 1 and preferably significantly greater than 100.
  • the thermally conductive layer 3 has a high coefficient of thermal conductivity. Copper, for example, is suitable as the thermally conductive layer 3, which has a far higher thermal conductivity than aluminum. However, copper has a significantly higher specific weight than aluminum, which is why a heat sink made entirely of copper has a relatively high weight and therefore a circuit board, e.g. a motherboard of a computer would be exposed to considerable mechanical stress.
  • the thermally conductive layer 3 in relation to the thickness of the
  • Substrate 1 thin, and preferably the layer 3 has only a thickness of ⁇ 10 microns, while the thickness of the substrate 1st is on the order of 1mm.
  • This very thin layer of heat-conducting material such as copper, eliminates the problems of mechanical stress, since the total weight of the cooling device is very low.
  • the contact between the heat source 6 and the cooling device must exist completely, ie over the entire base area of the cooling device.
  • the heat-conducting layer 3 can be applied in a liquid or semi-liquid manner and then actively or passively solidified. By applying the heat-conducting layer in liquid or semi-liquid form, an optimal contact between the substrate and the heat source can be created.
  • any unevenness in the surface of a heat source which would only lead to selective contact between the substrate and the heat source and thus poor heat coupling between them, is caused by the liquid or semi-liquid balanced thermal layer.
  • Numerous materials are suitable as the material for the heat-conducting layer, such as silicone, heat-conducting paste, aluminum, copper, silver, etc.
  • the overall dimensions of the cooling device are relatively small.
  • the surface corresponds essentially to the radiating surface of the object to be cooled 6.
  • Thickness is significantly smaller than the length of the longer edge of the base area and is preferably in the range of 1 mm, which makes the heat conduction distance very short. Good heat coupling between the heat source or the heat introduction surface and the entire heat dissipation surface, which is extremely large in comparison, is thus achieved. The heat is therefore transported very quickly and the cooling performance is excellent.
  • the heat is derived from the heat source 6 by transferring the heat absorbed in the heat-conducting layer 3 of the structured substrate 1 Energy on the surrounding medium, for example air.
  • the ambient medium is heated and flows through the structured substrate into the ambient air.
  • the convection flow begins gradually because the heat source also only gradually warms up after it has been put into operation.
  • a further improvement is obtained if the entire heat dissipation surface is covered with the heat-conducting layer, that is to say also the inner walls of the channels 2, the surface 4 and the side surfaces.
  • FIGS. 2a to 2f Various variants are possible here, some of which are shown in FIGS. 2a to 2f.
  • all surfaces of the substrate 1 are coated with the thermally conductive layer, that is to say the underside with the layer 3, the inner walls of the channels 2 with the layer 7 and the surface with the layer 8.
  • the underside is coated with the layer 3 and the inner walls of the channels 2 with the layer 7, while the surface 4 is uncoated.
  • the entire underside of the substrate 1 is covered with the layer 3, i.e. the underside of the channels 2 is also closed by the layer 3. Otherwise, as in FIG. 2a, all other surfaces are also coated.
  • the channels 2 are in turn closed with the layer 3, but the surface 4 is not coated.
  • the entire underside of the substrate 1 is coated in such a way that the channels 2 are also closed at the bottom by the layer 3. The remaining areas have no coating.
  • the channels have a rectangular cross section.
  • other cross sections can also be used, e.g. Cylindrical shape or any other shape.
  • the cross section of the channels can - as shown in Fig. 4a - also taper, i.e. for example, have a decreasing diameter in the direction from the heat introduction surface to the surface.
  • This geometry in conjunction with the speed of the cooling medium (e.g. air), can create a pressure drop in the duct.
  • the lower pressure in the upper area of the channel supports the removal of the heated medium and thus the cooling efficiency of the cooling device.
  • the convection flow will also be particularly supported in that the channel dimensions are designed to decrease in the desired direction of flow over the entire path of the fluid.
  • 4a shows the preferred flow direction from the object 6 to be cooled through the channels 2 to the surface 4 of the substrate 1.
  • the Bernoulli equation provides the following relationship:
  • V is the flow rate of the fluid in the channel.
  • the direction of flow does not necessarily have to run vertically, but can also run laterally coming from above.
  • the structured substrate can be produced in various ways.
  • a first possibility is the formation of the structures in the substrate by different
  • Etching process Another possible method for forming the structures in the substrate is the use of embossing methods (hot or cold) to transfer structures onto a substrate.
  • embossing methods hot or cold
  • these two fundamentally different methods can also be used in combination.
  • the substructures provided with continuous pores or channels can be produced with the aid of etching processes and a structured substrate which is possibly placed between this structure and the heat source can be produced with the aid of embossing processes.
  • Another method for forming the structure in the substrate is the well-known LIGA method (lithography and electroplating).
  • a carrier layer made of a material coated with a heat-conducting material eg plastic
  • no etching steps are required.
  • the resulting benefits are obvious.
  • the only ones required Partial steps of this process variant are: mask production, lithography (eg X-ray lithography), electroplating, demolding, filling with eg plastic, demolding.
  • the plastic shape is identical to the mask.
  • This plastic form can then be coated with the heat-conducting material.
  • the shape created by electroplating then forms the production template for further cooling devices made of plastic with a thermally conductive coating.
  • the application of the heat-conducting layer or layers can e.g. done by vapor deposition. This creates an excellent contact between the heat source and the
  • Cooling device created because the formation of voids between them is avoided.
  • tapered channels can moreover be carried out, for example, by anisotropic wet-chemical etching solutions, it being possible, for example, to form V-shaped recesses in [100] silicon and U-shaped recesses in [110] silicon.
  • the heat introduction surface of the substrate has grooves or furrows 9 which are in flow connection with the channels 2.
  • Cooling medium e.g. Air with ambient temperature flows in these grooves 9 and conducts and dissipates heat from the surface of the object to be cooled to the channels 2.
  • the cooling device has a two-part structure, the first part of which is the structured substrate 1 described above, while the second part of the cooling device of this embodiment is a second substrate 10 which is between the heat source and the first substrate 1 is arranged and has a channel structure with the grooves or furrows 9. These grooves 9 run parallel to one another and parallel to the surface of the heat source and of course also parallel to the underside of the first substrate. Of course, other designs of the structure are also possible.
  • the second substrate 10 has the task of improving the supply of the ambient medium for heat dissipation. In stationary operation, a type of chimney fume is formed, in which heat is removed from the heat source by means of continuous convection.
  • the second substrate 10 is preferably made thinner than the first substrate 1 and also carries the heat-conducting layer 3 on its underside.
  • basically two variants are conceivable, namely one in which the grooves or furrows 9 are in flow connection with the channels 2, What is illustrated by the groove 9 'and the channel 2' in Fig. 3, the second substrate 10 also has vertically extending openings or pores and a second variant in which there is no flow connection between the grooves 9 and the channels 2, which can be seen at channel 2 "in Fig. 3.
  • the entire cooling device with the channels 2 and the grooves 9 can also be formed in one piece, which in turn by
  • the two substrates 1 and 10 are to be structured separately and then connected in a heat-conducting and aligned manner, for example with a heat-conducting adhesive. Coating can be done analogously to
  • Embodiments of FIG. 2 are performed. If the heat source is a microprocessor or another electronic component, the cooling device of the present invention can be provided on the microprocessor during the manufacture thereof. Especially if the heat source is a microprocessor or another electronic component, the cooling device of the present invention can be provided on the microprocessor during the manufacture thereof. Especially if the
  • the cooling device can be integrated in the microprocessor. This reduces the number of production steps, reduces the adjustment effort when attaching the cooling device to the microprocessor, speeds up production, increases the yield in processor production and lowers the overall costs. If the cooling device is integrated into the heat source, such as a microprocessor, this can be implemented in a simple manner known to the person skilled in the art, such as, for example, the above-mentioned etching and lithography processing, over the entire surface of the heat source. If desired, the cooling device can even be “embedded” in the microprocessor, ie the top of the cooling device is flush with the top of the microprocessor.
  • the substrate 11 which has a multiplicity of channels 12 which extend through the thickness of the substrate 11.
  • the substrate here is a cuboid body, the surface of which has a layer 13 of thermally conductive material. This area is referred to below as the heat introduction area. It is in direct contact with an object 16 to be cooled, which can be, for example, a microprocessor, a chip, another electronic or electrical component or else another body to be cooled.
  • the substrate 11 consists, for example, of silicon or a similar material.
  • the structuring of the substrate in this case the production of the channels 12, is carried out with the aid of suitable lithography and etching processes, as are used in the semiconductor industry.
  • the structure can be formed in a precisely defined manner, for example by specifying the number, dimensions and arrangement or spatial distribution of the channels 12. By choosing the parameters, a ratio of heat dissipation area to arm introduction area of, for example, 400 to 700 and more can be achieved.
  • the heat dissipation surface here is not only the surface 14 of the substrate, but primarily the much larger inner surface of the channels 12. These inner surfaces, the surface 14 and the side surfaces with the exception of the heat introduction surface form the heat dissipation surface.
  • all other embodiments of the structured substrate set out in the parent patent are also possible and are hereby included.
  • At least one surface of the heat dissipation surface is provided with a rough surface.
  • This roughening is e.g. by applying thermally conductive particles 21 to the already structured substrate. These particles can be applied directly to the substrate. If some surfaces of the substrate are provided with a heat-conducting layer 13, these particles 21 are applied to the heat-conducting layer 13. This roughening of the surface further increases the heat dissipation area.
  • the magnification factor compared to the exemplary embodiments in FIGS. 1 to 4 is at least 2, preferably more than 10 or higher. As a result, the ratio of the heat dissipation area to the heat introduction area can be 1000 to 7000 or more.
  • the dimensions of the particles 21 are of the order of a few micrometers or smaller, in particular up to a few nanometers.
  • Such particles can e.g. consist of metal oxides, such as iron oxide.
  • Other materials are of course also possible.
  • a porous, sponge-like thin oxide layer can also be applied.
  • the radiated power is proportional to the radiation area, here the heat dissipation surface, and the fourth power of the temperature (T 4 ). Accordingly, the net radiation power of a body with temperature T at an ambient temperature of T 0 is as follows:
  • the material properties of the coating are included in the emissivity e.
  • a good emissivity e is obtained with metals (AL, CU etc.) or oxide compounds that are applied by vapor deposition processes.
  • FIG. 6 schematically shows an enlarged section of a cross section of the substrate 11, in which channels 12 also run through the substrate, but whose side walls are inclined with respect to the vertical.
  • the channel walls form a trapezoidal shape directed away from the heat source 16.
  • the "slope angle" of this trapezoidal structure can be e.g. Be 54.76 °. This angle can be varied by changing the position of the crystal planes accordingly.
  • the channel walls are coated with particles 21, as a result of which the heat-radiating surface is enlarged. If the channel walls are coated with a heat-conducting layer 17, this is provided with the part no 21. This also applies to the surface 14 with the heat-conducting layer 8 and the underside with the heat-conducting layer 13.
  • the cooling device can of course be applied over the entire surface in one of the ways described above, for example with a small distance between the individual ones Cooling devices or partially adjoining each other.
  • cooling device according to the invention can also be used for other sources of heat than microprocessors.
  • fans or other ventilation devices can of course also be arranged. It is also possible to arrange the cooling device separately from the heat source after the invention and then to couple it to it by a heat conductor.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

Le dispositif de refroidissement destiné notamment à des composants électroniques, tels des microprocesseurs. Ce dispositif se compose d'un substrat (1) qui présente une surface d'introduction de chaleur en contact thermique avec l'objet à refroidir (6) et une surface de dissipation de chaleur. La surface de dissipation de chaleur a une structure définie, de préférence, sous forme de canaux continus (2), sa surface étant ainsi sensiblement supérieure à celle de la surface d'introduction de chaleur. Au moins la surface d'introduction de chaleur mais, de préférence, aussi toutes ou les principales parties de la surface de dissipation de chaleur sont pourvues d'une mince couche (3) de matériau thermoconducteur. On peut améliorer davantage le dispositif en dotant sa surface d'une couche de fines particules (21), par exemple de métal ou d oxyde de métal, ce qui augmente davantage cette surface.
EP01971879A 2000-08-25 2001-08-07 Dispositif de refroidissement et son procede de production Withdrawn EP1354352A2 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10041829 2000-08-25
DE10041829A DE10041829B4 (de) 2000-08-25 2000-08-25 Kühlvorrichtung
DE10049274 2000-09-28
DE10049274A DE10049274B4 (de) 2000-08-25 2000-09-28 Kühlvorrichtung und Verfahren zu deren Herstellung
PCT/EP2001/009089 WO2002017390A2 (fr) 2000-08-25 2001-08-07 Dispositif de refroidissement et son procede de production

Publications (1)

Publication Number Publication Date
EP1354352A2 true EP1354352A2 (fr) 2003-10-22

Family

ID=26006813

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01971879A Withdrawn EP1354352A2 (fr) 2000-08-25 2001-08-07 Dispositif de refroidissement et son procede de production

Country Status (7)

Country Link
US (1) US7044212B1 (fr)
EP (1) EP1354352A2 (fr)
JP (1) JP2004518269A (fr)
KR (1) KR20030024916A (fr)
DE (1) DE10049274B4 (fr)
TW (1) TW507520B (fr)
WO (1) WO2002017390A2 (fr)

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DE10049274B4 (de) 2008-07-24
DE10049274A1 (de) 2002-05-29
WO2002017390A2 (fr) 2002-02-28
TW507520B (en) 2002-10-21
US7044212B1 (en) 2006-05-16
KR20030024916A (ko) 2003-03-26
WO2002017390A3 (fr) 2003-08-21
JP2004518269A (ja) 2004-06-17

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