GB2384618A - A structure for thermal management in an optoelectronic device. - Google Patents
A structure for thermal management in an optoelectronic device. Download PDFInfo
- Publication number
- GB2384618A GB2384618A GB0201782A GB0201782A GB2384618A GB 2384618 A GB2384618 A GB 2384618A GB 0201782 A GB0201782 A GB 0201782A GB 0201782 A GB0201782 A GB 0201782A GB 2384618 A GB2384618 A GB 2384618A
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- GB
- United Kingdom
- Prior art keywords
- substrate
- optical device
- recess
- optoelectronic
- optoelectronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 230000001902 propagating effect Effects 0.000 claims abstract description 4
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 3
- 239000010432 diamond Substances 0.000 claims abstract description 3
- 238000009826 distribution Methods 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001256 tonic effect Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
An optical device for example, a laser diode comprises an optoelectronic device formed on a substrate. The substrate includes a recess formed beneath the optoelectronic device. A surface of the recess is coated with a layer of a thermally conducting material so that thermal energy is preferentially conducted away from the optoelectronic device by the thermally conducting material without propagating through the bulk thickness of the substrate. The thermally conducting material may be diamond. The optoelectronic device may be an optical amplifier, an optical modulator, an optical switch or a photodetector.
Description
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A STRUCTURE FOR THERMAL MANAGEMENT IN AN OPTOELEC ; TONIC DEVICE
Field of the Invention
The present invention relates to a method for enhancing heat dissipation in an optoelectronic device, and in particular by means of a structure in the device substrate.
Background to the Invention
The performance and power scaling of many optoelectronic devices is currently being limited by problems relating to the generation of heat and its effective dissipation within the active regions of the device. This is particularly true of high power laser diode devices, where optical powers in excess of tens of watts are obtained from a single small active region by the injection of a large electric current. Although electrical-to-optical conversion efficiency as high as 50% is obtained for some devices, much of the remaining energy difference manifests itself as localized heating within the active region of the device.
The rate of heat generation, together with the volume of the active region and the thermal conducting properties of the surrounding material, determine the local rise in temperature, which can be many tens of C. A rise of this order can lead to a general degradation in the performance and efficiency of the device. Furthermore, many properties of optoelectronic devices are quite temperature sensitive. For example, the lasing frequency of a laser device may drift due to temperature changes, a wavelength change of 0.3 nm/ C is typical. Thermal expansion of the laser cavity can lead to further changes in wavelength, and in particular may lead to mode hopping of the lasing frequency in single longitudinal mode devices.
The refractive index of the active region is also temperature sensitive. Thus a large non-uniform temperature distribution may lead to phase distortion of the optical beam, including thermal lensing and thermally-induced birefringence, reducing beam quality and device efficiency. A more serious problem in many devices is that of stress induced by differential thermal expansion, due to non-uniformity or mismatch in the local coefficient of thermal expansion (CTE). Thermally-induced stress can lead to beam distortion and birefringence. However, more serious is the threat to structural integrity, which at the highest power levels can lead to catastrophic failure of the device.
As a consequence of the problems described above, much effort has been directed to finding techniques for improved thermal management within the integrated
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optoelectronic chip. The integrated chip usually comprises an optoelectronic device located on a thick substrate, which conducts heat away from the active region of the device. The chip is typically mounted either p-side or n-side down on a heat-sinking submount assembly. A range of materials and structures have been investigated for use in such assemblies, concentrating particularly on those with high thermal conductivity. A p-side down mounting has the advantage that the active region of the device, where heat is generated, is in close proximity to the submount and therefore heat can be removed more quickly. However, the presence of a large thermal gradient can lead to substantial mechanical stresses in the active region of the device. In an n-side down mounting, heat dissipation is reliant on conduction through the bulk thickness of the device substrate to the n-side metallizations. This arrangement is very stable, with considerably less mechanical stress, but the rate of heat conduction is much slower.
Although the use of a submount serves to enhance the removal and spreading of heat from an optoelectronic chip, the subsequent dissipation of heat to the ambient surroundings may not be sufficiently fast or stable. Therefore, the whole chip and submount assembly is often located on a thermoelectric cooler (TEC). This approach has the twin benefits of improved heat removal and the possibility of fast, active temperature stabilization via feedback to the TEC driving circuitry from a temperature monitoring probe. A disadvantage of the TEC is that during operation it generates additional heat to that which it transports away from the optoelectronic chip. This heat has then to be removed either by dissipation to the surroundings or by water cooling, for example.
Despite development of these external techniques for removing heat, there has been less work relating to improving thermal management within the optoelectronic chip itself. The external aids to heat removal, although necessary, are generally not in close enough proximity to the source of the heat generation to have a significant effect on heat removal in the immediate vicinity of the source. Techniques for the improvement of intrachip heat management are therefore expected to contribute to an increase in the thermal handling capacity of optoelectronic chips and the continued power scaling of high power devices.
Summary of the Invention
According to one aspect of the present invention, an optical device comprises an optoelectronic device formed on a substrate, wherein the substrate includes a recess formed beneath the optoelectronic device, a surface of the recess being coated with a
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layer of a thermally conducting material so that thermal energy is preferentially conducted away from the optoelectronic device by the thermally conducting material without propagating through the bulk thickness of the substrate.
The optoelectronic device may be, but is not limited to one of the following : laser diode, optical amplifier, optical modulator, optical switch or photodetector. However, the present invention will typically be most applicable to high power devices such as the high power laser diode, or laser diode array.
Preferably, the recess extends from a lower surface of the substrate to a region close to an upper surface of the substrate, where the substrate interfaces with the structure of the optoelectronic device.
Preferably, the recess is substantially centered on, but located beneath, the active region of the device, where the heat is generated.
Preferably, the layer of thermally conducting material extends from the region of the recess in closest proximity to the optoelectronic device to a region on a lower surface of the substrate where thermal contact is made with another heat removing device, assembly or structure. In this way, heat is efficiently conducted away from the device without propagating through a large thickness of bulk substrate.
Preferably, the thermally conducting material is a metallic material, such as aluminium, gold or silver. However, other highly conducting materials, such as diamond, deposited by chemical vapour deposition, may be used.
Typically, an electrical connection to the optoelectronic device will also be located on the lower surface of the substrate. A portion of the thermally conducting layer may function as the electrical contact pad, although separate electric contact pads are also possible. Preferably, this connection is the n-side or negative connection.
The shape of the recess may take many forms, for example a deep well with curved side walls, circular lateral cross-section and a curved or domed base region in close proximity to the optoelectronic device. Another example is a trench, with a rectangular opening, flat sloping sides walls and an inner base region that is curved or arched in one transverse dimension but which is of constant depth in the other transverse dimension. However, the three dimensional shape of the recess is not limited to the above examples.
If the only opening to the recess is located at the lower surface of the substrate, an air pocket may be formed if the lower surface of the substrate is solder bonded to a submount assembly. An example of such a closed recess would be a well or trench with
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closed ends. However, a recess comprising a channel or trench extending to one or more side faces of the substrate, so that at least one end of the channel or trench is open, would not be subject to this problem as air is able to escape via the end openings. It is therefore preferred that a substrate with a closed recess also includes an air duct, running from the recess to a side face of the substrate, to allow for venting or removal of air within the recess. The air duct may have one of a range of dimensions or shapes, provided it does not impede the operation of the optical device or compromise its structural integrity.
The depth of recess that is practical will be limited by the temperature gradient and associated stress profile that is developed across the bulk substrate that remains between the inner base region of the recess and the interface with the optoelectronic device structure. For this reason the base of the recess may not be in very close proximity to the device.
Sharp geometric features, or points of inflection in the surface geometry of the recess will lead to non-uniform temperature distribution and a concentration of thermally induced stress. It is therefore preferred that the surface of the recess, and the associated conductive layer, exhibit a smooth and sufficiently slow spatial variation to avoid regions of heat concentration.
However, if the dimensions of the recess are sufficiently large, a portion of a curved base of the recess in proximity to the optoelectronic device may still be sufficiently planar to promote a relatively uniform heat flow away from the device to the thermally conducting layer.
Where a non-uniform heat flow is required the shape of the recess base may be designed to promote the desired distribution. Alternatively, the layer of thermally conducting material in proximity to the optoelectronic device may be thick and of nonuniform composition in order to provide a non-uniform thermal conductivity and thereby promote the desired non-uniform distribution. In this case, rather than a thin conforma layer, the thermally conducting material actually fills a part of the recess in close proximity to the optoelectronic device.
According to another aspect of the present invention, an optical device comprises a plurality of optoelectronic devices located on a common substrate, wherein the substrate includes at least one recess formed beneath at least one optoelectronic device in accordance with the one aspect of the present invention.
The present invention thus provides a means for promoting the desired thermal distribution in the vicinity of an individual device, or group of devices, within an array of
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devices, whilst ensuring that heat is efficiently channelled away from each device in the array. If some level of thermal coupling between devices is desired, this may be achieved by the shape, depth and proximity of neighbouring recesses and by the dimensions and thermal conductivity characteristics of the material which forms the layer covering the surfaces of the recesses.
Brief Description of the Drawings
Examples of the present invention will now be described in detail with reference to the accompanying drawings, in which:
Figure 1 shows a known optoelectronic device on an integrated chip;
Figures 2A and 2B show, respectively a schematic end view and perspective view of a typical active device, such as a laser diode;
Figures 3A and 3B show corresponding views of the device of Figures 2A and 2B with a thermal backtub structure, in accordance with the present invention; and,
Figure 4 shows the variation in maximum active region temperature with metalized film thickness, for a device both with and without a thermal backtub.
Detailed Description
Optoelectronic chips may comprise several devices integrated on a common substrate, including active devices such as-the laser diode. Figure 1 shows an example of a known structure in which a distributed feedback (DFB) laser is integrated with an optical modulator. The active parts of the device are contained within a burying layer a few microns thick, which in turn is located on a substrate that is approximately 150 um thick. At the base of the substrate is a metallized layer, which may act as both an electrical and thermal contact pad. However, there are no other intra-chip structures to aid in the dissipation of heat.
The example of Figure 1 is encompassed in the schematic of Figure 2, which shows a generic optoelectronic device chip. The active region of the device is surrounded by a passivation layer, which serves to protect much of the device structure from the ambient. However, the presence of the passivation region prevents any effective heat extraction from this side of the chip. Heat dissipation must therefore be achieved via the bulk of the chip substrate to a lower surface, usually the n-side. Here a thin metal film acts as both an electrical contact and provides a large area thermal conductor to aid in heat
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removal.
One way to improve heat flow within a chip would be to use a much thinner substrate, but this is not possible, as firstly the thick substrate provides structural integrity to the chip and secondly a chip with a thin substrate would not be able to sustain the thermally-induced stress loading. It is, however, possible to thin the substrate over a limited region to produce a recess, or"backtub"as we term it. The inner surface of the recess may be metalized, with a thin film of silver or gold for example, in addition to the usual metallization applied to the lower surface of the chip substrate.
The schematics of Figures 3A and 3B show, respectively, an end view and a perspective view of the generic device chip, shown in Figures 2A and 28, which has been modified to include a thermal backtub structure, in accordance with the present invention. In this particular example, the backtub takes the form of a wide, deep trench in the bulk of the substrate material. At the base of the trench, in closest proximity to the active region of the optoelectronic device, the structure is curved or arched. The exposed surface of the substrate, including both the lower planar surface and the inner surface of the trench, is covered in a layer of a thermally conducting metal.
At the lower surface of the substrate, the width of the trench opening may be in
the range 50-120 um, for an optoelectronic chip with a width of approximately 300 um. For a substrate that is 150 Am thick, the depth of the trench could be in the range 70-110 11m. However, the optimum dimensions will depend on the thermal loading and on the thermal and mechanical properties of the substrate material. The precise shape of the base of the backtub will also depend on the desired thermal distribution. The slowly curving shape in the example of Figure 3 provides for good conduction of heat away from the source region, whilst avoiding points of heat concentration that could lead to high levels of localized mechanical stress. Also, the slow curvature and large dimensions of the trench base encourage a relatively uniform flow of heat away from the active region.
The optimum thickness of the metallic layer will be determined by the heat loading, the shape and proximity of the backtub, and the thermal properties of the metal used for the conducting layer. Typically it will be in the range of a few microns to a few tens of microns. However, the layer may have a thickness that varies over the surface of the backtub, to promote better heat dissipation. For the same reason, the layer may comprise a material, or materials, whose thermal conductivity varies over the surface of the backtub.
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In orderto compute the optimum metal layerthickness, numerical simulations were used to compare the thermal performance of a laser diode device both with and without a thermal backtub structure. The backtub comprised a trench-like structure of the type shown in Figure 3, and the metallization comprised a single layer of gold (Au) of uniform thickness. Figure 4 shows the results of the simulations in terms of the maximum temperature Tmax recorded in the active region of the device as a function of the Au film thickness. Data is shown for the simulated device both with and without the thermal backtub. In the absence of a backtub, the maximum temperature recorded is relatively insensitive to film thickness, recording a slight rise for the thickest films simulated.
Conversely, with a backtub present, the maximum temperature shows a marked variation with film thickness, falling monotonically as the thickness is increased. At a thickness of approximately 18 um, the thermal performance of the two structures is similar. By 30 u. m the thermal performance of the device with the backtub exceeds that of the device without a backtub, recording a 2% drop in the value of T.
The present invention thus provides a simple technique that can substantially improve the intra-chip management of heat generated by active optoelectronic devices integrated on the chip. By fabricating an optoelectronic chip with one or more thermal backtub structures in the chip substrate, improved heat flow and control of the associated temperature distribution can be achieved without compromising the mechanical integrity of the chip. This will in turn lead to an increase in device lifetime and an improvement in the optical performance and efficiency of active components integrated on the chip.
Claims (15)
1. An optical device comprising an optoelectronic device formed on a substrate, wherein the substrate includes a recess formed beneath the optoelectronic device, a surface of the recess being coated with a layer of a thermally conducting material so that thermal energy is preferentially conducted away from the optoelectronic device by the thermally conducting material without propagating through the bulk thickness of the substrate.
2. An optical device according to claim 1, wherein the spatial distribution of thermal energy in the optical device is substantially uniform.
3. An optical device according to claim 1 or 2, wherein the recess extends from a lower surface of the substrate to a region close to an upper surface of the substrate, where the substrate interfaces with the structure of the optoelectronic device.
4. An optical device according to any preceding claim, wherein the recess is substantially centered on an active region of the optoelectronic device.
5. An optical device according to any preceding claim, wherein the recess extends to at least one side face of the substrate.
6. An optical device according to any preceding claim, wherein the substrate further includes at least one air duct running from the recess to a side face of the substrate.
7. An optical device according to any preceding claim, wherein the layer of thermally conducting material extends from a region of the recess in closest proximity to the optoelectronic device to a region on a lower surface of the substrate, where thermal contact is made with another heat removing device, assembly or structure.
8. An optical device according to claim 7, wherein at least a portion of the thermally conducting material is also electrically conducting so as to form part of the circuit by which electrical power is supplied to the device.
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9. An optical device according to claim 8, wherein the lower surface of the substrate is the n-side for negative electrical connection.
10. An optical device according to any preceding claim, wherein the thermally conducting material is a metallic material.
11. An optical device according to any of claims 1 to 9, wherein the thermally conducting material is diamond.
12. An optical device comprising a plurality of optoelectronic devices according to any preceding claim formed on a common substrate.
13. An optical device according to claim 12, wherein the thermal energy distribution associated with one optoelectronic device is spatially separated from the thermal energy distribution associated with at least one other optoelectronic device.
14. An optical device according to claim 12, wherein a portion of the thermal energy distribution associated with one optoelectronic device spatially overlaps with a portion of the thermal energy distribution associated with at least one other optoelectronic device.
15. An optical device according to any preceding claim, wherein the or each optoelectronic device is selected from a group consisting of a laser diode, an optical amplifier, an optical modulator, an optical switch and a photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0201782A GB2384618A (en) | 2002-01-25 | 2002-01-25 | A structure for thermal management in an optoelectronic device. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0201782A GB2384618A (en) | 2002-01-25 | 2002-01-25 | A structure for thermal management in an optoelectronic device. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0201782D0 GB0201782D0 (en) | 2002-03-13 |
| GB2384618A true GB2384618A (en) | 2003-07-30 |
Family
ID=9929784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0201782A Withdrawn GB2384618A (en) | 2002-01-25 | 2002-01-25 | A structure for thermal management in an optoelectronic device. |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2384618A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546028A (en) * | 1982-04-27 | 1985-10-08 | Compagnie D'informatique Militaire Spatiale & Aeronautique | Composite substrate with high heat conduction |
| GB2256526A (en) * | 1991-06-07 | 1992-12-09 | De Beers Ind Diamond | Embedded diamond heat sinks |
| JPH08204072A (en) * | 1995-01-24 | 1996-08-09 | Mitsutoyo Corp | Device for cooling electronic parts |
| US6043986A (en) * | 1995-09-19 | 2000-03-28 | Nippondenso Co., Ltd. | Printed circuit board having a plurality of via-holes |
| WO2002017390A2 (en) * | 2000-08-25 | 2002-02-28 | N F T Nanofiltertechnik Gmbh | Refrigeration device and a method for producing the same |
-
2002
- 2002-01-25 GB GB0201782A patent/GB2384618A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546028A (en) * | 1982-04-27 | 1985-10-08 | Compagnie D'informatique Militaire Spatiale & Aeronautique | Composite substrate with high heat conduction |
| GB2256526A (en) * | 1991-06-07 | 1992-12-09 | De Beers Ind Diamond | Embedded diamond heat sinks |
| JPH08204072A (en) * | 1995-01-24 | 1996-08-09 | Mitsutoyo Corp | Device for cooling electronic parts |
| US6043986A (en) * | 1995-09-19 | 2000-03-28 | Nippondenso Co., Ltd. | Printed circuit board having a plurality of via-holes |
| WO2002017390A2 (en) * | 2000-08-25 | 2002-02-28 | N F T Nanofiltertechnik Gmbh | Refrigeration device and a method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0201782D0 (en) | 2002-03-13 |
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