EP1334406A2 - Masque photolithographique - Google Patents

Masque photolithographique

Info

Publication number
EP1334406A2
EP1334406A2 EP01996769A EP01996769A EP1334406A2 EP 1334406 A2 EP1334406 A2 EP 1334406A2 EP 01996769 A EP01996769 A EP 01996769A EP 01996769 A EP01996769 A EP 01996769A EP 1334406 A2 EP1334406 A2 EP 1334406A2
Authority
EP
European Patent Office
Prior art keywords
opening
auxiliary
openings
mask according
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01996769A
Other languages
German (de)
English (en)
Inventor
Uwe Griesinger
Mario Hennig
Jürgen KNOBLOCH
Rainer Pforr
Manuel Vorwerk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1334406A2 publication Critical patent/EP1334406A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Definitions

  • the present invention relates to photolithographic masks.
  • the present invention relates in particular to photolithographic masks for structuring radiation-sensitive resist layers on semiconductor substrates for producing highly integrated semiconductor components.
  • Projection devices working with optical light - usually in the ultraviolet length range - are widely used in the manufacture of semiconductor products as so-called wafer steppers or scanners.
  • transparent or radiopaque i.e. Structures defined by opaque areas, which are typically formed as a mask on a quartz plate, are illuminated with coherent, monochromatic light and imaged via a lens system on a wafer coated with a light-sensitive lacquer.
  • b m i n is the minimum feature line width
  • ⁇ is the wavelength of the monochromatic light
  • NA is the numerical aperture of the imaging lens system.
  • radiation - for example ultraviolet light - passes through the openings 1 in the radiation-opaque layer 52 and, due to interference effects, leads to the distribution of the electric field E shown in the photoresist layer on the wafer.
  • Layer 52 is subjected to a phase shift, for example by etching the glass substrate 51, in such a way that a phase difference between adjacent openings 1 and 4 is achieved. As a rule, 180 ° is set as the phase difference.
  • the structure resolution can be increased by a factor of 2 compared to the conventional technique in the case of highly periodic, lattice-like structures.
  • a photolithographic mask for exposing radiation-sensitive resist layers to semiconductor substrates is provided, the mask
  • a) has at least one radiation-impermeable layer on a transparent carrier material
  • At least one opening is provided in the radiation-opaque layer, the at least one opening being designed such that the pattern formed by the at least one opening is transferred into the resist layer when exposed, and
  • At least one auxiliary opening is provided in the radiation-opaque layer, - the at least one auxiliary opening being designed such that the pattern formed by the at least one auxiliary opening is not transferred into the resist layer upon exposure to light, and - wherein when the radiation passes through the at least one auxiliary opening to produce a phase difference with respect to the radiation through an adjacent opening or an adjacent auxiliary opening.
  • the photolithographic mask according to the invention provides for the addition of auxiliary openings in addition to the actual openings which determine the structure.
  • the opening is also referred to below as the mother structure.
  • the auxiliary openings have a phase shift matched to the adjacent openings.
  • two openings are referred to as adjacent if there is radiation through the two openings occurs, there are significant interference effects.
  • the auxiliary openings it is possible to achieve a significant improvement 'of the aerial image contrast, especially outside the image plane and thus to ensure a significantly increased depth of field. Since the auxiliary openings are designed so that they do not develop in the photoresist, they can also be called sub-resolution phase assist structures (SPAS).
  • SPAS sub-resolution phase assist structures
  • auxiliary openings leads to a significant enlargement of the process window, especially in the case of insulated or semi-insulated structures, and a reduction in the difference in line widths to densely packed structures. It also enables circuit-typical layouts to be exposed in single exposure instead of - as in the prior art - in double exposure, and thus with double productivity.
  • the openings often have a rectangular shape, the openings generally being significantly longer than they are wide.
  • the auxiliary openings are preferably formed parallel to the actual openings.
  • the width of the auxiliary openings is chosen to be less than 0.3 ⁇ / NA.
  • ⁇ denotes the wavelength with which the exposure is made and NA the numerical aperture.
  • At least one auxiliary opening is provided for a semi-insulated opening.
  • an opening is referred to as semi-insulated if it has an adjacent opening only in one direction.
  • at least one auxiliary opening is therefore provided which replaces the “missing” adjacent opening in the opposite direction.
  • auxiliary openings are provided for an insulated opening.
  • an opening is said to be isolated if it does not have an adjacent opening.
  • at least two auxiliary openings are therefore provided, which replace the “missing” adjacent openings.
  • a phase difference of 180 ° to each other is generated when the radiation passes through adjacent openings. Furthermore, it is preferred if when the radiation passes through a
  • the openings and / or the auxiliary openings form a grid-like pattern. It is preferred if the auxiliary openings are arranged at a distance which is approximately 0.3 to 0.7 times the period of the grating from the adjacent opening or auxiliary opening.
  • the at least one opening has a rectangular structure, while the at least one auxiliary opening
  • each case is arranged at a distance from the at least one opening, the distance a) being greater than the resolution limit of the projection apparatus used for the exposure in relation to the wafer scale, and b) being less than the coherence length of the light used in the projection apparatus , and -
  • the distance a) being greater than the resolution limit of the projection apparatus used for the exposure in relation to the wafer scale, and b) being less than the coherence length of the light used in the projection apparatus , and -
  • the substrate contacting level can be mentioned here as an example.
  • the contact holes which are conventionally square in shape, are designed as rectangular openings on the mask, the longitudinal axis of all rectangles having the same coordinate direction. Accordingly, ellipses with an analog length extension are to be formed on the wafer.
  • H rt rt P ⁇ li ü Hi PP 3 tr ii ⁇ Hi ⁇ - ⁇ ⁇ Q p ⁇ rt CQ 01 cr Hi ⁇ H Hi ⁇ 01 ⁇ ⁇ ⁇ P. LQ 3 ⁇ - 3 P tr tr
  • P td P TJ ⁇ P Pi £ 01 tr P ⁇ oi tr ⁇ ⁇ tr ⁇ l ⁇ 01 ⁇ ⁇ ⁇ ⁇ P- ⁇ rt rt
  • Hi P CQ O et ra ONP> ⁇ . ⁇ LQ P CQ P Pi Pi rt ⁇ P • ⁇ ⁇ - Hi ⁇ - li P ⁇ - LQ ⁇ 0 ⁇ - 0 Pi li ⁇ CQ r P LQ ü Hl ⁇ P 4 ⁇ PP tr P 3 ⁇ rt Pi
  • the present invention proves to be particularly advantageous in the production of elliptical structures on the wafer from essentially square structures on the mask.
  • the aerial image on the axis mother structure - auxiliary opening is influenced in such a way that the dimension of the lacquer structure produced in this coordinate differs from that in the vertical coordinate.
  • the structure to be imaged will therefore expand in length in this direction, while its width in the direction of the auxiliary openings remains limited when imaging on the wafer.
  • the ellipticity, i.e. H. the length to width ratio can thus be controlled by deliberately shaping the auxiliary openings.
  • the rectangular structures to be imaged can be set up as structures on alternating phase masks.
  • An application of the auxiliary openings according to the invention on halftone phase masks is also conceivable.
  • Another advantage of the present invention is the significant enlargement of the process window for the projection. Areas must be specified for the parameters dose and focus of the exposure or projection, within which a predetermined quality of the image is achieved, the areas being dependent on the other. A combination of both areas for the projection is selected, which on the one hand contains the best possible image, and on the other hand allows the parameters to be as wide as possible. overall straight these margins are advantageously increased by the present invention given the quality limit for the image. In particular, the depth of field (focus) z. B. for imaging a substrate contact level in memory products by almost double compared to conventional chrome masks.
  • a particularly effective area for the phase difference according to the auxiliary opening with respect to the rectangular structure to be imaged has been found, which is embedded between 160 ° and 200 °.
  • auxiliary opening in order to achieve a possibly homogeneous effect, e.g. B. assumed in a coordinate direction for the auxiliary opening a length of at least the length of the rectangular structure to be imaged. Since the cross section, e.g. For example, if the width is in the range of the resolution limit of the projection apparatus, which is given by 0.25 * ⁇ / NA, the auxiliary opening is not printed on the wafer despite this large length extension.
  • a further auxiliary opening is provided in mirror symmetry about the axis of symmetry of the at least one rectangular structure to the previous auxiliary opening. This also ensures a symmetrical elongation of the rectangular structure - or a square structure as a subset of the rectangular structures - on the wafer.
  • an auxiliary opening can consist of interrupted elongated holes. These in turn form rectangles or lines, which are interrupted from each other with a distance below the resolution limit. The effect of such relief gene is insignificantly limited compared to the uninterrupted case.
  • the arrangement of the auxiliary opening relative to the rectangular structure is not limited to the highlighting of a coordinate direction.
  • a rectangular frame also leads as an auxiliary opening - or as a set of auxiliary openings - arranged around the rectangular structure to be imaged to advantageously enlarge the process window.
  • Auxiliary openings which are assigned to the rectangular structures to be imaged, together with these form a regular pattern on the mask.
  • the length of the individual auxiliary openings can be combined into elongated structures.
  • the cross section of the auxiliary opening fulfills the criterion of a so-called sub-resolution structure.
  • the rectangular structure to be imaged is essentially square.
  • the main advantage here is that in order to achieve any regular rectangular pattern on the wafer, no more rectangular structures need to be provided on the mask, which are equipped with an even greater length to width ratio. Rather, they can be provided as squares on the mask , which creates more space between the structures on the mask, especially in the case of conventionally critical distances. An example is presented below.
  • the rectangular structure and the at least one auxiliary opening are each formed with different transparency for the light passing through.
  • a suitable choice of the transparency of the auxiliary opening a further enlargement of the process window for the projection can advantageously be achieved.
  • a restricted light permeability of the auxiliary opening allows a larger cross-section to be selected in the design, since the limit dimension for printing then also increases.
  • the cross section of the auxiliary opening is chosen to be smaller than the resolution limit of the optical projection system itself.
  • This size essentially depends only on the lens system or its openings and can be specified immediately. Of course, printing on the wafer cannot take place below this limit.
  • the narrow range between the minimally necessary limit dimension for printing as the upper limit and the resolution limit as the lower limit also depends on the resist on the wafer or the type of processes following the exposure, e.g. developing or etching.
  • the ellipticity can also be controlled by adapting the numerical aperture of the projection system, it also being possible to enlarge the process window further.
  • FIG. 1 shows a photolithographic mask according to the prior art
  • FIG. 2 shows another photolithographic mask according to the prior art
  • FIG. 3 shows a photolithographic mask according to an embodiment of the present invention
  • FIG. 4 schematically shows a section along the line AA in FIG. 3,
  • FIG. 5 shows a photolithographic mask according to a further embodiment of the present invention.
  • Figure 6 schematically shows a section along the line A - A in Fig. 5, and
  • FIG. 7 shows a section of a regular pattern of contact holes in a substrate contacting plane with openings on the mask, or, on an adapted scale, the exposed ellipses formed therefrom on the wafer according to the prior art
  • Figure 8 shows the detail of the regular pattern
  • FIG. 9 shows an example according to the invention of a square opening on the mask with two associated auxiliary openings, each consisting of four interrupted elongated holes,
  • FIG. 10 shows a square rectangular structure according to the invention as an opening, enclosed by four auxiliary openings according to the invention.
  • FIG. 3 schematically shows a photolithographic mask according to a first embodiment of the present invention.
  • the mask has a group of five openings 1 and 4 with a width of 0.35 * ⁇ / NA (wafer-related). They are grouped as grids of the period 0.7 * ⁇ / NA, with adjacent openings 1 and 4 having a relative phase difference of 180 °.
  • An auxiliary opening 2 with a width of 0.27 * ⁇ / NA is applied parallel to the outer openings 1 at a distance D of 0.7 * ⁇ / NA, the phase shift differing from the adjacent opening by 180 °.
  • the auxiliary openings 2 have the effect that the semi-insulated openings 1 are imaged with a significantly higher air image contrast and the exposure method has a significantly improved lithographic process window.
  • the auxiliary openings 2 are due to their low intensity. Do not transfer the aerial photo into the resist layer.
  • the openings 1 supported by auxiliary openings 2 are given a width adjustment, in particular a widening, so that the openings 1 under nominal exposure conditions (best focus, nominal exposure) are of the same width as the adjacent closely packed openings 4 are transferred into the resist layer.
  • the openings 1 supported by auxiliary openings 2 can be widened in a range of up to 20%.
  • the insulated opening 1 protruding from the central structure is made on both sides by auxiliary openings 2 of the width ÜJ LO to DO ⁇ > ⁇ 1 in O L ⁇ O L ⁇ o L ⁇
  • PPP 23 ⁇ tr 0 td ⁇ ⁇ ( Q 3 tsi tr ii ⁇ S ⁇ PP et ⁇ ⁇ ⁇ > PPH ⁇ - ⁇
  • Hi 0 ⁇ ⁇ - rt P 3 ⁇ ii .. P P. P ⁇ P P-. X 01 01 ⁇ P LQ tQ ti

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Les orifices (1) d'un masque, à transférer sur une plaquette, sont associés à des orifices auxiliaires (2). Ces derniers ont, par rapport aux orifices (1), une propriété de glissement de phase située, de préférence, entre 160 DEG et 200 DEG , et une section (21) inférieure à la dimension limite (31) de l'impression de l'appareil de projection de telle façon que les orifices auxiliaires (2) ne soient pas imprimés sur la plaquette. Simultanément, ils renforcent le contraste de la photographie, notamment d'un orifice isolé ou semi-isolé (1) associé sur la plaquette. Dans un mode de réalisation, les orifices auxiliaires (2) se trouvent à une certaine distance de l'orifice (1), cette distance étant supérieure de la limite de résolution de l'appareil de projection mais inférieure à la longueur de cohérence de la lumière utilisée pour la projection. Leur action consiste en une utilisation liée à la phase de l'effet de proximité optique qui, lors de l'installation des orifices auxiliaires (2), peut être appliqué aux orifices carrés (1) du masque dans une direction préférentielle pour la production de structures elliptiques (1') sur une plaquette. Il en résulte un agrandissement considérable de la fenêtre de processus pour la projection, notamment de plans de contact de substrat sur une plaquette.
EP01996769A 2000-11-14 2001-11-14 Masque photolithographique Withdrawn EP1334406A2 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10056262 2000-11-14
DE10056262 2000-11-14
DE10126838 2001-06-01
DE10126838 2001-06-01
PCT/DE2001/004263 WO2002041076A2 (fr) 2000-11-14 2001-11-14 Masque photolithographique

Publications (1)

Publication Number Publication Date
EP1334406A2 true EP1334406A2 (fr) 2003-08-13

Family

ID=26007651

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01996769A Withdrawn EP1334406A2 (fr) 2000-11-14 2001-11-14 Masque photolithographique

Country Status (6)

Country Link
US (1) US6838216B2 (fr)
EP (1) EP1334406A2 (fr)
JP (1) JP3943020B2 (fr)
KR (1) KR100564171B1 (fr)
TW (1) TW574602B (fr)
WO (1) WO2002041076A2 (fr)

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JP3943020B2 (ja) * 2000-11-14 2007-07-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト フォトリソグラフィーマスク
DE10136291B4 (de) 2001-07-25 2008-05-08 Qimonda Ag Photolithographische Maske
DE10203358A1 (de) * 2001-08-31 2003-04-03 Infineon Technologies Ag Photolithographische Maske
DE10327613B4 (de) * 2003-06-18 2007-10-31 Infineon Technologies Ag Verfahren zur Bildung einer Öffnung auf einer alternierenden Phasenmaske
US6905975B2 (en) * 2003-07-03 2005-06-14 Micron Technology, Inc. Methods of forming patterned compositions
KR100546119B1 (ko) * 2003-10-23 2006-01-24 주식회사 하이닉스반도체 어레이 콘텍의 일정성과 정렬 정확성을 향상시킬 수 있는ｅｄｇｅ ｃｏｒｒｅｃｔｉｏｎ 방법
JP4585197B2 (ja) * 2003-12-22 2010-11-24 ルネサスエレクトロニクス株式会社 レイアウト設計方法およびフォトマスク
US7575852B2 (en) * 2004-08-20 2009-08-18 Macronix International Co., Ltd. Method of optically transferring a pattern from a mask having advanced oriented assist features for integrated circuit hole patterns
DE102004058813A1 (de) * 2004-12-07 2006-06-08 Infineon Technologies Ag Maske und Belichtungseinrichtung
US20080305409A1 (en) * 2007-06-08 2008-12-11 Palmer Shane R Lithographic mask and method for printing features using the mask
US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
US20090250760A1 (en) * 2008-04-02 2009-10-08 International Business Machines Corporation Methods of forming high-k/metal gates for nfets and pfets
US7975246B2 (en) * 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
EP2562599B1 (fr) 2009-01-29 2014-12-10 Digiflex Ltd. Procédé de production d'un photomasque sur une surface photopolymérique
US8765329B2 (en) * 2010-11-05 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution rod in the transition region
USD776664S1 (en) * 2015-05-20 2017-01-17 Chaya Coleena Hendrick Smart card
TWI704647B (zh) * 2015-10-22 2020-09-11 聯華電子股份有限公司 積體電路及其製程
CN112946993B (zh) * 2019-11-26 2024-07-16 中芯国际集成电路制造(上海)有限公司 光学邻近修正、光掩膜版制作及图形化方法
CN112631068B (zh) * 2020-12-25 2024-01-09 上海华力集成电路制造有限公司 版图Dense-3Bar-Dense结构的修正方法

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JPH04216548A (ja) * 1990-12-18 1992-08-06 Mitsubishi Electric Corp フォトマスク
JP3179520B2 (ja) * 1991-07-11 2001-06-25 株式会社日立製作所 半導体装置の製造方法
JP3943020B2 (ja) * 2000-11-14 2007-07-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト フォトリソグラフィーマスク

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Also Published As

Publication number Publication date
WO2002041076A2 (fr) 2002-05-23
JP3943020B2 (ja) 2007-07-11
KR20040005859A (ko) 2004-01-16
US6838216B2 (en) 2005-01-04
US20040038135A1 (en) 2004-02-26
WO2002041076A3 (fr) 2003-01-03
JP2004514171A (ja) 2004-05-13
KR100564171B1 (ko) 2006-03-27
TW574602B (en) 2004-02-01

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