EP1333482A3 - Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens - Google Patents

Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens Download PDF

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Publication number
EP1333482A3
EP1333482A3 EP03250583A EP03250583A EP1333482A3 EP 1333482 A3 EP1333482 A3 EP 1333482A3 EP 03250583 A EP03250583 A EP 03250583A EP 03250583 A EP03250583 A EP 03250583A EP 1333482 A3 EP1333482 A3 EP 1333482A3
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EP
European Patent Office
Prior art keywords
thin film
gas
furnace
silicon carbide
soi substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03250583A
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English (en)
French (fr)
Other versions
EP1333482B1 (de
EP1333482A2 (de
Inventor
Katsutoshi Izumi
Motoi Nakao
Yoshiaki Ohbayashi
Keiji Mine
Seisaku Hirai
Fumihiko Jobe
Tomoyuki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Metropolitan University
Original Assignee
Osaka Municipal Government
Hosiden Corp
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Publication date
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Publication of EP1333482A2 publication Critical patent/EP1333482A2/de
Publication of EP1333482A3 publication Critical patent/EP1333482A3/de
Application granted granted Critical
Publication of EP1333482B1 publication Critical patent/EP1333482B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q50/00—Information and communication technology [ICT] specially adapted for implementation of business processes of specific business sectors, e.g. utilities or tourism
    • G06Q50/10—Services
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q30/00—Commerce
    • G06Q30/06—Buying, selling or leasing transactions
    • G06Q30/0601—Electronic shopping [e-shopping]
    • G06Q30/0613—Electronic shopping [e-shopping] using intermediate agents
    • G06Q30/0619—Neutral agent
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16H—HEALTHCARE INFORMATICS, i.e. INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR THE HANDLING OR PROCESSING OF MEDICAL OR HEALTHCARE DATA
    • G16H20/00—ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance
    • G16H20/30—ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance relating to physical therapies or activities, e.g. physiotherapy, acupressure or exercising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Health & Medical Sciences (AREA)
  • Economics (AREA)
  • Theoretical Computer Science (AREA)
  • Finance (AREA)
  • General Health & Medical Sciences (AREA)
  • Accounting & Taxation (AREA)
  • Primary Health Care (AREA)
  • General Physics & Mathematics (AREA)
  • General Business, Economics & Management (AREA)
  • Tourism & Hospitality (AREA)
  • Physics & Mathematics (AREA)
  • Strategic Management (AREA)
  • Marketing (AREA)
  • Human Resources & Organizations (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Public Health (AREA)
  • Physical Education & Sports Medicine (AREA)
  • Medical Informatics (AREA)
  • Epidemiology (AREA)
  • Development Economics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP03250583A 2002-01-31 2003-01-30 Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens Expired - Lifetime EP1333482B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002022631A JP3920103B2 (ja) 2002-01-31 2002-01-31 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
JP2002022631 2002-01-31

Publications (3)

Publication Number Publication Date
EP1333482A2 EP1333482A2 (de) 2003-08-06
EP1333482A3 true EP1333482A3 (de) 2006-02-01
EP1333482B1 EP1333482B1 (de) 2008-06-25

Family

ID=19192223

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03250583A Expired - Lifetime EP1333482B1 (de) 2002-01-31 2003-01-30 Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens

Country Status (7)

Country Link
US (2) US7084049B2 (de)
EP (1) EP1333482B1 (de)
JP (1) JP3920103B2 (de)
KR (1) KR100777544B1 (de)
CN (1) CN100343962C (de)
DE (1) DE60321734D1 (de)
TW (1) TWI264070B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280354A (ja) * 2001-03-19 2002-09-27 Osaka Prefecture 炭素薄膜のエッチング方法及びエッチング装置
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US20070231485A1 (en) * 2003-09-05 2007-10-04 Moffat William A Silane process chamber with double door seal
JP2005317801A (ja) * 2004-04-28 2005-11-10 Japan Science & Technology Agency 薄膜素子形成法
US7382023B2 (en) * 2004-04-28 2008-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fully depleted SOI multiple threshold voltage application
JP4690734B2 (ja) * 2005-01-28 2011-06-01 エア・ウォーター株式会社 単結晶ＳｉＣ基板の製造方法
JP4511378B2 (ja) * 2005-02-15 2010-07-28 エア・ウォーター株式会社 ＳＯＩ基板を用いた単結晶ＳｉＣ層を形成する方法
JP4563918B2 (ja) * 2005-10-31 2010-10-20 エア・ウォーター株式会社 単結晶ＳｉＣ基板の製造方法
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
WO2008111277A1 (ja) * 2007-03-15 2008-09-18 Kyushu Institute Of Technology 単結晶酸化亜鉛基板
JP5394632B2 (ja) 2007-11-19 2014-01-22 エア・ウォーター株式会社 単結晶ＳｉＣ基板の製造方法
JP2009158702A (ja) * 2007-12-26 2009-07-16 Kyushu Institute Of Technology 発光デバイス
JP5388136B2 (ja) * 2008-03-10 2014-01-15 国立大学法人東北大学 グラフェンまたはグラファイト薄膜、その製造方法、薄膜構造および電子デバイス
JP2011243640A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
JP5585268B2 (ja) 2010-07-22 2014-09-10 セイコーエプソン株式会社 単結晶炭化珪素膜付き基材及び単結晶炭化珪素膜の製造方法並びに単結晶炭化珪素膜付き基材の製造方法
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
JP6111678B2 (ja) * 2013-01-17 2017-04-12 信越半導体株式会社 ＧｅＯＩウェーハの製造方法
JP6136731B2 (ja) * 2013-08-06 2017-05-31 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
MD4280C1 (ro) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Procedeu de creştere a structurii pInP-nCdS
WO2016047534A1 (ja) * 2014-09-24 2016-03-31 エア・ウォーター株式会社 ＳｉＣ層を備えた半導体装置
RU2578104C1 (ru) * 2015-04-07 2016-03-20 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ газофазной карбидизации поверхности монокристаллического кремния ориентации (111), (100)
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454456A1 (de) * 1990-04-26 1991-10-30 Canon Kabushiki Kaisha Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält
JPH06191997A (ja) * 1992-10-07 1994-07-12 Kyushu Kogyo Univ ＳｉＣ結晶膜の形成法
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
EP1265274A2 (de) * 2001-06-06 2002-12-11 Osaka Prefecture Verfahren zur Herstellung einer dünnen einkristallinen Siliziumkarbidschicht und Herstellungsgerät

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664944A (en) * 1986-01-31 1987-05-12 The United States Of America As Represented By The United States Department Of Energy Deposition method for producing silicon carbide high-temperature semiconductors
DE19514079A1 (de) * 1995-04-13 1996-10-17 Siemens Ag Verfahren zum Passivieren einer Siliciumcarbid-Oberfläche gegenüber Sauerstoff

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454456A1 (de) * 1990-04-26 1991-10-30 Canon Kabushiki Kaisha Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält
JPH06191997A (ja) * 1992-10-07 1994-07-12 Kyushu Kogyo Univ ＳｉＣ結晶膜の形成法
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
EP1265274A2 (de) * 2001-06-06 2002-12-11 Osaka Prefecture Verfahren zur Herstellung einer dünnen einkristallinen Siliziumkarbidschicht und Herstellungsgerät

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 542 (C - 1261) 17 October 1994 (1994-10-17) *

Also Published As

Publication number Publication date
US20040173154A1 (en) 2004-09-09
TW200306627A (en) 2003-11-16
EP1333482B1 (de) 2008-06-25
US7084049B2 (en) 2006-08-01
JP3920103B2 (ja) 2007-05-30
US20030148586A1 (en) 2003-08-07
KR20030065326A (ko) 2003-08-06
TWI264070B (en) 2006-10-11
EP1333482A2 (de) 2003-08-06
US7128788B2 (en) 2006-10-31
JP2003224248A (ja) 2003-08-08
CN1435866A (zh) 2003-08-13
KR100777544B1 (ko) 2007-11-20
CN100343962C (zh) 2007-10-17
DE60321734D1 (de) 2008-08-07

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