WO2008111277A1 - 単結晶酸化亜鉛基板 - Google Patents

単結晶酸化亜鉛基板 Download PDF

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Publication number
WO2008111277A1
WO2008111277A1 PCT/JP2007/074379 JP2007074379W WO2008111277A1 WO 2008111277 A1 WO2008111277 A1 WO 2008111277A1 JP 2007074379 W JP2007074379 W JP 2007074379W WO 2008111277 A1 WO2008111277 A1 WO 2008111277A1
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Prior art keywords
single crystal
layer
zno
crystal silicon
crystal zno
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PCT/JP2007/074379
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English (en)
French (fr)
Inventor
Motoi Nakao
Kiyoshi Ishitani
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Kyushu Institute Of Technology
Nihon Colmo Co., Ltd.
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Priority claimed from JP2007201553A external-priority patent/JP4300264B2/ja
Application filed by Kyushu Institute Of Technology, Nihon Colmo Co., Ltd. filed Critical Kyushu Institute Of Technology
Publication of WO2008111277A1 publication Critical patent/WO2008111277A1/ja

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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • C—CHEMISTRY; METALLURGY
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    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02439—Materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
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    • H01L21/02612—Formation types
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　高品質の単結晶ＺｎＯ基板を従来に比して安価に製造する方法が開示されている。該方法は，単結晶ＺｎＯ基板の製造方法であって、(a) ＳｉＯ2絶縁層と、その上に設けられた、表面を構成する単結晶シリコン層とを含む、半導体基板を準備するステップと、(b)単結晶シリコン層を表面側から、絶縁層上に３～７ｎｍの厚みだけ残して酸化するステップと、(c)生じたＳｉＯ2 層を除去するステップと、(d)残った単結晶シリコン層に、加熱しつつキャリアガスと炭化水素ガスを供給して全層を単結晶ＳｉＣ層へと変換するステップと、(e)単結晶ＳｉＣ層の表面に化学気相成長により厚み０．１～５μｍの単結晶ＺｎＯ層を形成するステップと、(f)単結晶ＺｎＯ層をアニールするステップと、 (g)アニールされた単結晶ＺｎＯ層の表面に化学気相成長により単結晶ＺｎＯ層を形成して単結晶ＺｎＯ層の層厚を増加させるステップとを含む。
PCT/JP2007/074379 2007-03-15 2007-12-19 単結晶酸化亜鉛基板 WO2008111277A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-066045 2007-03-15
JP2007066045 2007-03-15
JP2007201553A JP4300264B2 (ja) 2007-03-15 2007-08-02 単結晶ＺｎＯ基板の製造方法
JP2007-201553 2007-08-02

Publications (1)

Publication Number Publication Date
WO2008111277A1 true WO2008111277A1 (ja) 2008-09-18

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PCT/JP2007/074379 WO2008111277A1 (ja) 2007-03-15 2007-12-19 単結晶酸化亜鉛基板

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05294795A (ja) * 1992-04-15 1993-11-09 Sharp Corp 酸化亜鉛単結晶薄膜の製造方法
JP2002326895A (ja) * 2001-05-01 2002-11-12 Stanley Electric Co Ltd 半導体結晶とその成長方法及び光半導体素子
JP2003224248A (ja) * 2002-01-31 2003-08-08 Osaka Prefecture 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
JP2004296821A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd ＺｎＯ系半導体素子およびその製造方法
JP2005335985A (ja) * 2004-05-25 2005-12-08 Yuho Chin 単結晶育成装置及び酸化亜鉛単結晶育成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05294795A (ja) * 1992-04-15 1993-11-09 Sharp Corp 酸化亜鉛単結晶薄膜の製造方法
JP2002326895A (ja) * 2001-05-01 2002-11-12 Stanley Electric Co Ltd 半導体結晶とその成長方法及び光半導体素子
JP2003224248A (ja) * 2002-01-31 2003-08-08 Osaka Prefecture 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
JP2004296821A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd ＺｎＯ系半導体素子およびその製造方法
JP2005335985A (ja) * 2004-05-25 2005-12-08 Yuho Chin 単結晶育成装置及び酸化亜鉛単結晶育成方法

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