EP1328968A1 - Verfahren und vorrichtung zum reinigen einer halbleiterscheibe - Google Patents
Verfahren und vorrichtung zum reinigen einer halbleiterscheibeInfo
- Publication number
- EP1328968A1 EP1328968A1 EP01988947A EP01988947A EP1328968A1 EP 1328968 A1 EP1328968 A1 EP 1328968A1 EP 01988947 A EP01988947 A EP 01988947A EP 01988947 A EP01988947 A EP 01988947A EP 1328968 A1 EP1328968 A1 EP 1328968A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- cleaning
- semiconductor wafer
- mechanical polishing
- chemical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004140 cleaning Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims description 46
- 238000007517 polishing process Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 47
- 238000005498 polishing Methods 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000012153 distilled water Substances 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 238000011437 continuous method Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GTMKMPPCXPEXLP-UHFFFAOYSA-N [N].CC(C)O Chemical compound [N].CC(C)O GTMKMPPCXPEXLP-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the invention relates to a method for cleaning a surface of a semiconductor wafer after a chemical-mechanical polishing step and a device for carrying out such a method.
- chemical mechanical polishing is increasingly being used to planarize the topography on the semiconductor wafer that occurs during the production processes.
- the chemical mechanical polishing mainly serves to level trench fillings, metal plugs, e.g. made of tungsten in contact holes and vias and of intermediate oxides and intermetallic dielectrics.
- the semiconductor wafer to be processed is pressed by a wafer carrier against a rotatably arranged polishing table on which there is an elastic perforated pad, a so-called pad, which contains a polishing agent, a so-called slurry.
- the semiconductor wafer and the polishing table rotate in opposite directions, as a result of which the surface of the semiconductor wafer is polished off at the protruding points until a completely flat wafer surface is reached.
- the polishing agents generally contain further active chemical additives which enable selective removal of the layers on the semiconductor wafer.
- a so-called blind polishing process ie a polishing process that is stopped within the layer to be polished
- a so-called stop-ayer polishing process in which the polishing process is selective to another one lying below the polishing layer Layer
- slurry impurities generally remain on the surface of the semiconductor wafer and have to be removed in a subsequent cleaning process.
- the semiconductor wafers are first stored in a water bath after the polishing process and then freed from the surface contamination with a brush apparatus, a so-called brush cleaner.
- the semiconductor wafer is continuously rinsed with distilled water and / or ammonia.
- the semiconductor wafer is then dried in a drying station by rapid rotation.
- the brush cleaning process shown is a single disk process so that the disk throughput remains severely restricted.
- the necessary loading and unloading of the brush cleaner and the spin dryer also make the cleaning process very time-consuming. There is also a high consumption of distilled water or ammonia during the brush cleaning process.
- a wet cleaning process with the aid of chemical baths is also used, in which the semiconductor wafer is drawn through several successive cleaning baths, in particular the chemically bound slurry residues on the semiconductor surface being removed.
- a rinsing with distilled water and then a disk drying is carried out, the so-called Marangoni drying process preferably being used here, in which the semiconductor wafers are pulled through an isopropanol solution and then dried in hot nitrogen.
- the wet chemical cleaning process shown it is possible to clean several semiconductor wafers at the same time, which enables a high throughput of writing to be achieved.
- the problem here remains the high consumption of chemicals in the cleaning process and the high equipment costs.
- the object of the invention is therefore to provide a method and apparatus can remove with which remaining on a semiconductor wafer in chemical mechanical polishing, impurities quickly and effectively with little effort apparati ⁇ ven.
- the semiconductor wafer is first rinsed in succession with an etching liquid, then preferably rinsed with distilled water and then preferably dried with an isopropanol-nitrogen mixture.
- This integrated process control makes it possible to summarize the process steps previously carried out separately during cleaning, which saves process time and at the same time significantly increases the throughput of the disks.
- etching chemistry and distilled water can be saved to a great extent, in particular by carrying out the cleaning process with constant disk rotation.
- an HF solution, a buffered HF solution or a solution of H 2 SO 4 , H 2 O 2 and HF is used as the etching liquid.
- Such etching solutions can be used to reliably remove slurry impurities, such as those that occur in particular in the case of oxide or metal planarization with the aid of a chemical-mechanical polishing process.
- the cleaning device according to the invention has a process chamber which has a loading and unloading station for the semiconductor wafers, a turntable for holding and rotating the semiconductor wafer and feed and return lines for the process media for cleaning the semiconductor wafers.
- the process chamber for the cleaning and drying process is connected directly to the device for chemical mechanical polishing via a wet handler. This enables an integrated polishing and cleaning process with which a minimum defect density on the semiconductor wafer is guaranteed.
- Figure 1 shows schematically a combination system consisting of a chemical mechanical polishing system and a cleaning station according to the invention.
- 2A shows a blind polishing process
- 2B shows a stop layer polishing process
- Fig. 4 shows a cleaning station according to the invention in a sectional view.
- the combination system shown in FIG. 1 sits down on a polishing system 1, a wet handler 2 and a cleaning station.
- Nes layer structure consisting of a silicon layer 41 with trenches, a thin Si 2 N 3 layer 43 arranged thereon and a thick SiO 2 layer 44 is shown, the polishing process is stopped when the Si 2 N lying under the SiO 2 layer 44 3 layer 42 is exposed.
- the endpoint detection can z. B. done by measuring the current consumption of the rotating disc carrier, since the current changes during the transition of the layer materials.
- the problem with chemical mechanical polishing is that slurry residues adhering to the semiconductor surface have to be removed after the polishing process.
- This cleaning takes place according to the invention in the cleaning system 3, the essential elements of which are shown in more detail in a sectional view in FIG. 4.
- the semiconductor wafer 4 to be cleaned is transferred directly from the polishing system 1 into the cleaning station 3 with the aid of the wet handler 2.
- the wet handler 2 comprises a water bath 21 in which the semiconductor wafer to be cleaned is temporarily stored in order to then move it to the cleaning station 3.
- This coherent structure of the polishing system 1 and cleaning station 3 considerably simplifies the process implementation and significantly reduces the risk of defects forming on the semiconductor surface during the transition from the polishing system to the cleaning station.
- the cleaning station 3 has a loading and unloading station 31 which is connected to the wet handler 2 and to which a cleaning chamber 32 is connected.
- This cleaning chamber 32 is designed essentially cylindrical and divided into a plurality of vertically arranged subchambers, in the embodiment shown four stations, between which a rotatably mounted table 33 can be moved.
- the semiconductor wafer 4 to be cleaned is arranged on this turntable 33, the semiconductor wafer being held only at the edge, so that front and rear side cleaning is possible at the same time.
- F- tQ s co co P- ⁇ ⁇ tQ (D C ⁇ ⁇ ⁇ 3 tQ F. 3 J ⁇ 3 ⁇ to iQ TJ d iQ TJ D do rr Di F D-.
- slurry residues which occur during the planarization of tungsten with the aid of chemical mechanical polishing are to be removed, this is preferably carried out using the following process sequence.
- rinsing with distilled water and then etching off the slurry residues with HF or dilute sulfuric acid with small amounts of HF and H 2 O 2 are carried out in the individual subchambers.
- the semiconductor wafer is then rinsed again with distilled water and then dried in the fourth subchamber with an isopropanol / nitrogen gas mixture at high speed.
- This process sequence also ensures effective and quick removal of slurry residues that remain in a tungsten planarization by means of mechanical-chemical polishing.
- the process sequence according to the invention can in principle be adapted to all impurities which can occur during mechanical-chemical polishing. It is therefore within the scope of the invention to modify the specified materials and processes in a suitable manner in addition to the exemplary embodiments shown in order to remove residues which remain on a semiconductor wafer during mechanical-chemical polishing.
- the features of the invention disclosed in the above description, the drawings and the claims can be of importance both individually and in any combination for realizing the invention in its various configurations.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10052762 | 2000-10-25 | ||
| DE10052762A DE10052762A1 (de) | 2000-10-25 | 2000-10-25 | Verfahren und Vorrichtung zum Reinigen einer Halbleiterscheibe |
| PCT/EP2001/011582 WO2002035598A1 (de) | 2000-10-25 | 2001-10-08 | Verfahren und vorrichtung zum reinigen einer halbleiterscheibe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1328968A1 true EP1328968A1 (de) | 2003-07-23 |
Family
ID=7660932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP01988947A Withdrawn EP1328968A1 (de) | 2000-10-25 | 2001-10-08 | Verfahren und vorrichtung zum reinigen einer halbleiterscheibe |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6833324B2 (enrdf_load_stackoverflow) |
| EP (1) | EP1328968A1 (enrdf_load_stackoverflow) |
| JP (1) | JP2004512693A (enrdf_load_stackoverflow) |
| KR (1) | KR100543928B1 (enrdf_load_stackoverflow) |
| DE (1) | DE10052762A1 (enrdf_load_stackoverflow) |
| WO (1) | WO2002035598A1 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6881675B2 (en) * | 2002-05-15 | 2005-04-19 | Taiwan Semiconductor Manufacturing Co, Ltd. | Method and system for reducing wafer edge tungsten residue utilizing a spin etch |
| KR100604051B1 (ko) * | 2004-06-30 | 2006-07-24 | 동부일렉트로닉스 주식회사 | 게이트 산화막의 전세정방법 |
| KR100644054B1 (ko) * | 2004-12-29 | 2006-11-10 | 동부일렉트로닉스 주식회사 | 세정 장치 및 게이트 산화막의 전세정 방법 |
| KR100829376B1 (ko) * | 2006-12-20 | 2008-05-13 | 동부일렉트로닉스 주식회사 | 반도체 소자의 세정방법 |
| US20080289660A1 (en) * | 2007-05-23 | 2008-11-27 | Air Products And Chemicals, Inc. | Semiconductor Manufacture Employing Isopropanol Drying |
| CN101217108B (zh) * | 2008-01-02 | 2010-06-09 | 株洲南车时代电气股份有限公司 | 一种芯片台面腐蚀装置 |
| EP4152393A4 (en) * | 2021-08-04 | 2024-01-03 | Changxin Memory Technologies, Inc. | SEMICONDUCTOR STRUCTURE AND PRODUCTION PROCESS THEREOF |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT389959B (de) * | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
| US5442828A (en) * | 1992-11-30 | 1995-08-22 | Ontrak Systems, Inc. | Double-sided wafer scrubber with a wet submersing silicon wafer indexer |
| JP3326642B2 (ja) * | 1993-11-09 | 2002-09-24 | ソニー株式会社 | 基板の研磨後処理方法およびこれに用いる研磨装置 |
| US5996594A (en) * | 1994-11-30 | 1999-12-07 | Texas Instruments Incorporated | Post-chemical mechanical planarization clean-up process using post-polish scrubbing |
| TW386235B (en) * | 1995-05-23 | 2000-04-01 | Tokyo Electron Ltd | Method for spin rinsing |
| JPH09270412A (ja) * | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
| EP0805000A1 (en) * | 1996-05-02 | 1997-11-05 | MEMC Electronic Materials, Inc. | Semiconductor wafer post-polish clean and dry method and apparatus |
| TW357406B (en) * | 1996-10-07 | 1999-05-01 | Tokyo Electron Ltd | Method and apparatus for cleaning and drying a substrate |
| US5922136A (en) * | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
| US6017437A (en) * | 1997-08-22 | 2000-01-25 | Cutek Research, Inc. | Process chamber and method for depositing and/or removing material on a substrate |
| ATE311665T1 (de) * | 1997-09-24 | 2005-12-15 | Imec Inter Uni Micro Electr | Verfahren und vorrichtung zum entfernen von einer flüssigkeit von der oberfläche eines rotierenden substrats |
| US5807439A (en) * | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
| DE19801360A1 (de) * | 1998-01-16 | 1999-07-22 | Sez Semiconduct Equip Zubehoer | Verfahren und Vorrichtung zum Behandeln von Halbleiter-Oberflächen |
| DE19806406C1 (de) * | 1998-02-17 | 1999-07-29 | Sez Semiconduct Equip Zubehoer | Verfahren zum Rauhätzen einer Halbleiter-Oberfläche |
| US6172848B1 (en) * | 1998-04-10 | 2001-01-09 | International Business Machines Corporation | Write head with self aligned pedestal shaped pole tips that are separated by a zero throat height defining layer |
| US5964953A (en) * | 1998-05-26 | 1999-10-12 | Memc Electronics Materials, Inc. | Post-etching alkaline treatment process |
| JP2000003897A (ja) | 1998-06-16 | 2000-01-07 | Sony Corp | 基板洗浄方法及び基板洗浄装置 |
| US6099662A (en) * | 1999-02-11 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | Process for cleaning a semiconductor substrate after chemical-mechanical polishing |
-
2000
- 2000-10-25 DE DE10052762A patent/DE10052762A1/de not_active Withdrawn
-
2001
- 2001-10-08 WO PCT/EP2001/011582 patent/WO2002035598A1/de active IP Right Grant
- 2001-10-08 EP EP01988947A patent/EP1328968A1/de not_active Withdrawn
- 2001-10-08 JP JP2002538478A patent/JP2004512693A/ja active Pending
- 2001-10-08 KR KR1020037005115A patent/KR100543928B1/ko not_active Expired - Fee Related
-
2003
- 2003-04-25 US US10/424,173 patent/US6833324B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| None * |
| See also references of WO0235598A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002035598A1 (de) | 2002-05-02 |
| KR100543928B1 (ko) | 2006-01-20 |
| DE10052762A1 (de) | 2002-05-16 |
| US20030186553A1 (en) | 2003-10-02 |
| JP2004512693A (ja) | 2004-04-22 |
| US6833324B2 (en) | 2004-12-21 |
| KR20040004400A (ko) | 2004-01-13 |
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