EP1293032A1 - Composants demi-pont - Google Patents

Composants demi-pont

Info

Publication number
EP1293032A1
EP1293032A1 EP01943515A EP01943515A EP1293032A1 EP 1293032 A1 EP1293032 A1 EP 1293032A1 EP 01943515 A EP01943515 A EP 01943515A EP 01943515 A EP01943515 A EP 01943515A EP 1293032 A1 EP1293032 A1 EP 1293032A1
Authority
EP
European Patent Office
Prior art keywords
diode
semiconductor switch
schottky diode
heat sink
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01943515A
Other languages
German (de)
English (en)
Inventor
Andreas GRÜNDL
Bernhard Hoffmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compact Dynamics GmbH
Original Assignee
Compact Dynamics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compact Dynamics GmbH filed Critical Compact Dynamics GmbH
Publication of EP1293032A1 publication Critical patent/EP1293032A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/5388—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with asymmetrical configuration of switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a half-bridge assembly for switching electrical powers, in which at least two semiconductor switches are connected in series to form a half-bridge.
  • Each semiconductor switch has a control input.
  • each first semiconductor switch has a first power connection that can be connected to a high voltage potential and every second semiconductor switch has a second power connection that can be connected to a low voltage potential.
  • a second power connection of each first semiconductor switch is connected to a first power connection of the respective second semiconductor switch;
  • each of the semiconductor switches has a free-wheeling diode which is parallel to the two power connections of the respective semiconductor switch.
  • Such a half-bridge assembly is known from DE-A-42 30 510.
  • Such half-bridge arrangements are used to form inverters for a wide variety of applications, e.g. for feeding induction machines, permanent magnet motors and the like. in use (see e.g. DE-A-40 27 969).
  • the free-wheeling diode is usually integrated with the semiconductor switch, in particular in the case of FET power semiconductor switches.
  • the integrated free-wheeling diode is designed as a silicon junction diode.
  • such an integrated free-wheeling diode has a relatively long switching time (in the range from 10 nanoseconds to a few microseconds). This leads to a significant electrical power loss occurring in the integrated free-wheeling diode, which has to be converted into heat and dissipated.
  • Half-bridge arrangements are at least for high electrical switching capacities liquid cooled. Since the integrated free-wheeling diodes must have a noticeable current stability, they also require considerable semiconductor areas and thus space.
  • Schottky diodes have very short switching times because, instead of a pn junction, they have a metal-semiconductor junction which also has a rectifying effect. In the case of the metal-semiconductor transition, however, the stored charge is very small, so that the switching time is very short.
  • Another feature of Schottky diodes is the lower forward voltage of about 0.3 volts compared to silicon junction diodes.
  • the integrated free-wheeling diode is a silicon junction diode with a forward voltage of approximately 0.7 volts. This means that practically all of the current flows through the Schottky diode in the freewheeling operation of the half-bridge arrangement, since its forward voltage is lower.
  • the Schottky diode has switching times in the order of 10 to 100 picoseconds. The power loss to be converted into heat is thus considerably reduced. Nevertheless, the Schottky diode is also cooled in the same way as the power semiconductor switch with the integrated free-wheeling diode, since otherwise overheating (over 175 degrees Celsius) and thermal destruction are expected.
  • US Pat. No. 5,661,644 discloses a half-bridge assembly with two semiconductor switches connected in series. A free-wheeling diode is connected in parallel with each semiconductor switch and a Schottky diode is connected in parallel with each free-wheeling diode. Furthermore, the arrangement of semiconductor switches and free-wheeling diodes on a heat sink is known from this publication.
  • DE 195 32 992 AI discloses a printed circuit board equipped on one side with electrical or electronic components, on the back of which a cooling plate is applied with the insertion of an intermediate layer.
  • a thermally highly resilient component is connected to the cooling plate by a thermal bridge.
  • a semiconductor assembly with a first semiconductor component arranged on a base plate is known from US Pat. No. 6,055,148.
  • a Schottky diode is attached to the first semiconductor component by means of an adhesive layer.
  • a device for tempering electronic components which are arranged on a carrier built into a housing.
  • a body is arranged between the carrier and a housing wall, which has a closed elastic covering with heat-conducting material located therein and is largely airtight on the carrier and
  • Housing wall abuts.
  • the invention is based on the problem, the power density
  • the "thermal coupling to a cooling medium” can be both the coupling to a (metallic) heat sink and the coupling to a cooling liquid surrounding the semiconductor components.
  • the diode characteristic curve of a Schottky diode is more temperature-dependent than the diode characteristic curve of an integrated free-wheeling diode with silicon junction diodes -Characteristics.
  • the characteristic of a Schottky diode has a relatively high ohmic component. When the Schottky diode is energized, it heats up more due to the poorer cooling, so that the forward voltage of the Schottky diode increases with increasing temperature
  • the construction of the half-bridge assembly according to the invention achieves a particularly compact arrangement that enables a packing density that is not comparable with previous solutions.
  • the semiconductor area of the Schottky diodes can be reduced by about 66%.
  • the required volume of cooling medium or cooling liquid, based on the total volume can be kept low, and miniaturization of the overall arrangement can be achieved, which makes the use of the invention particularly economical in mobile applications.
  • a ceramic plate or a plastic layer is arranged between the Schottky diode and a heat sink for the Schottky diode, a copper coating being provided on both sides, while the semiconductor switch with its integrated free-wheeling diode is thermally coupled directly to the heat sink is.
  • a heat sink for the Schottky diode which (although in rather how the semiconductor switch with its integrated free-wheeling diode) is directly thermally connected to the Schottky diode, but in turn has a higher thermal resistance to its surroundings (liquid or air flow) than the heat sink for the semiconductor switch with its integrated free-wheeling diode.
  • the half-bridge arrangement Since for the operation of the half-bridge arrangement or the control of the load connected to the half-bridge arrangement (for example an asynchronous machine) a control circuit with a control computer is required anyway in order to energize the individual phases accordingly, a program can be run in the control computer for this warm-up phase be filed. Through this control computer program for the warm-up phase, the half-bridge arrangement is operated in such a way that the current through the Schottky diode in freewheeling operation is reduced until the Schottky diode has heated up relative to the semiconductor switch and its integrated freewheeling diode to such an extent that the forward voltage of the integrated freewheeling diode also under load is always above the forward voltage of the Schottky diode.
  • the semiconductor switches are formed by fast-switching, low-loss field-effect transistors (FETs). Several pairs of semiconductor switches connected in series can be connected in parallel. In addition, the semiconductor switches can be formed by a large number of individual semiconductor switch components, each with low switching powers. Good cooling can be achieved by using many semiconductor switch elements, each with a relatively low switching capacity, but which can easily be connected in parallel, since the many individual components can be easily reached by the cooling medium.
  • FETs fast-switching, low-loss field-effect transistors
  • the invention also relates to a power output stage of a control device for a multi-phase electric motor, in which a half-bridge arrangement is provided for each phase of the electric motor.
  • FIG. 1 shows an electrical circuit diagram of a half-bridge arrangement according to the invention.
  • Fig. 2 shows a semiconductor switch with an integrated free-wheeling diode and a parallel Schottky diode of a half-bridge arrangement according to the invention shown in FIG. 1 arranged on a heat sink in a schematic side view.
  • FIG. 1 shows a half bridge 10 which has a pair of N-channel MOSFETs 12, 14 connected in series.
  • one control input G1, G2 is provided for the two MOSFETs 12, 14, which are controlled by a control circuit ECU via gate resistors (not shown further).
  • a support capacitor (not shown) is provided between the high and low voltage potentials V55 and V DD .
  • the 12, 14 takes place with a (pulse-width-coded) control signal with a switching frequency of more than 20 kHz.
  • the switching frequency is preferably 100 kHz and more.
  • the two MOSFETs 12, 14 have integrated free-wheeling diodes, which have silicon junction diode properties.
  • Schottky diodes 16, 18 are connected in parallel with the integrated free-wheeling diodes of the two MOSFETs 12, 14, the Schottky diodes 16, 18 having the same orientation as the integrated free-wheeling diodes.
  • each MOSFET 12 is coupled with its integrated free-wheeling diode directly to a heat sink 22 in a heat-conducting manner.
  • the associated parallel-connected Schottky diode 16 is also connected to the heat sink 22, but there is a ceramic plate 20 between the Schottky diode 16 and the heat sink 22, so that the heat conduction between the MOSFET 12 with its integrated free-wheeling diode and the heat sink 22 is better than that between Schottky diode 16 and heat sink 22.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un composant demi-pont permettant de commuter des puissances électriques et comportant au moins deux commutateurs à semi-conducteurs montés en série en formant un demi-pont. Chaque commutateur à semi-conducteurs présente une entrée de commande. Le premier commutateur à semi-conducteurs présente une première connexion électrique qui est reliée à un potentiel de tension élevé. Le deuxième commutateur à semi-conducteurs présente une deuxième connexion électrique qui est reliée à un potentiel de tension moins élevé. Une deuxième connexion électrique de chaque premier commutateur à semi-conducteurs est reliée à une première connexion électrique du deuxième commutateur à semi-conducteurs respectif. Chaque commutateur à semi-conducteurs présente une diode de marche à vide qui est parallèle aux deux connexions électriques du commutateur à semi-conducteurs respectif et une diode de Schottky est montée en parallèle à chaque diode de marche à vide. Chaque commutateur à semi-conducteurs est relié à sa diode de marche à vide et chaque diode de Schottky est reliée de façon thermoconductrice à un dissipateur thermique. La résistance thermique entre chaque diode de Schottky et le dissipateur thermique a une dimension supérieure à la résistance thermique entre chaque diode de marche à vide et le dissipateur thermique.
EP01943515A 2000-06-23 2001-06-15 Composants demi-pont Withdrawn EP1293032A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10030875A DE10030875C1 (de) 2000-06-23 2000-06-23 Halbbrückenbaugruppe
DE10030875 2000-06-23
PCT/EP2001/006817 WO2001099266A1 (fr) 2000-06-23 2001-06-15 Composants demi-pont

Publications (1)

Publication Number Publication Date
EP1293032A1 true EP1293032A1 (fr) 2003-03-19

Family

ID=7646701

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01943515A Withdrawn EP1293032A1 (fr) 2000-06-23 2001-06-15 Composants demi-pont

Country Status (7)

Country Link
US (1) US6753674B2 (fr)
EP (1) EP1293032A1 (fr)
JP (1) JP2003536363A (fr)
KR (1) KR20030020890A (fr)
AU (1) AU2001266073A1 (fr)
DE (1) DE10030875C1 (fr)
WO (1) WO2001099266A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3608553B2 (ja) * 2002-01-23 2005-01-12 トヨタ自動車株式会社 交流発電電動機用インバータ
KR101194040B1 (ko) * 2005-11-22 2012-10-24 페어차일드코리아반도체 주식회사 트랜지스터에 프리휠링 다이오드가 구현된 고집적회로
TWI396268B (zh) * 2006-05-25 2013-05-11 Taiwan Semiconductor Mfg 複合連結線與其製造方法
JP2007325325A (ja) * 2006-05-30 2007-12-13 Matsushita Electric Ind Co Ltd ブラシレスモータ駆動回路
JP2009159184A (ja) * 2007-12-26 2009-07-16 Hitachi Ltd フリーホイールダイオードとを有する回路装置、及び、ダイオードを用いた回路装置とそれを用いた電力変換器
JP5169373B2 (ja) * 2008-03-26 2013-03-27 三菱電機株式会社 半導体スイッチング装置及びその使用方法
US7649237B2 (en) * 2008-05-15 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode for high speed and radio frequency application
WO2010106062A1 (fr) * 2009-03-16 2010-09-23 Micropos Medical Ab Electrode de suivi de rayonnement dotée d'un dispositif de positionnement et d'une unité d'identification
US8344544B2 (en) * 2010-05-19 2013-01-01 Hamilton Sundstrand Corporation Bus-tie SSPCS for DC power distribution system
JP5525917B2 (ja) * 2010-05-27 2014-06-18 ローム株式会社 電子回路
US8619438B2 (en) * 2011-05-19 2013-12-31 Infineon Technologies Ag Resonant converter
US20170062410A1 (en) * 2015-08-31 2017-03-02 Semiconductor Components Industries, Llc Circuit including a rectifying element, an electronic device including a diode and a process of forming the same
CN105226973A (zh) * 2015-09-24 2016-01-06 中国南方电网有限责任公司超高压输电公司检修试验中心 可关断子模块以及可切除直流故障的改进型半桥mmc-hvdc拓扑
JP6490017B2 (ja) * 2016-01-19 2019-03-27 三菱電機株式会社 パワーモジュール、３相インバータシステム、およびパワーモジュールの検査方法
JP6583119B2 (ja) * 2016-04-19 2019-10-02 株式会社デンソー 電力変換装置
WO2021215103A1 (fr) * 2020-04-21 2021-10-28 富士電機株式会社 Circuit électronique et module à semi-conducteur
JP2023006250A (ja) * 2021-06-30 2023-01-18 富士電機株式会社 集積回路、及びパワーモジュール

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903189A (en) 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5544038A (en) * 1992-09-21 1996-08-06 General Electric Company Synchronous rectifier package for high-efficiency operation
EP2325889B1 (fr) * 1995-04-12 2015-06-10 Fuji Electric Co., Ltd. Circuit intégré à haute tension, structure de jonction de terminaison à haute tension et transistor MIS à haute tension
SE9502249D0 (sv) * 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
DE19624475A1 (de) * 1996-06-19 1998-01-02 Kontron Elektronik Vorrichtung zum Temperieren elektronischer Bauteile
US5814884C1 (en) 1996-10-24 2002-01-29 Int Rectifier Corp Commonly housed diverse semiconductor die
DE19645636C1 (de) * 1996-11-06 1998-03-12 Telefunken Microelectron Leistungsmodul zur Ansteuerung von Elektromotoren
US5925910A (en) 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
EP0927433B1 (fr) * 1997-07-19 2005-11-16 Koninklijke Philips Electronics N.V. Ensembles et circuits de dispositif a semi conducteur
DE19932992A1 (de) * 1999-07-14 2001-02-22 Ali Selimoglu Prinzip zur Weiterverwendung von Abwässern in privaten Haushalten
DE50115341D1 (de) * 2000-04-13 2010-03-25 Infineon Technologies Ag Spannungswandler

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0199266A1 *

Also Published As

Publication number Publication date
US6753674B2 (en) 2004-06-22
JP2003536363A (ja) 2003-12-02
WO2001099266A1 (fr) 2001-12-27
KR20030020890A (ko) 2003-03-10
AU2001266073A1 (en) 2002-01-02
US20030137320A1 (en) 2003-07-24
DE10030875C1 (de) 2002-03-07

Similar Documents

Publication Publication Date Title
DE10030875C1 (de) Halbbrückenbaugruppe
DE19939933B4 (de) Elektronische Leistungs-Moduleinheit
DE102005007373B4 (de) Leistungshalbleiterbaugruppe
EP2532084B1 (fr) Composant électronique pour commuter une puissance électrique
DE69715214T2 (de) Stromwandlermodul zur gleich-/wechselspannungsumwandlung mit niedriger anschlussstreuinduktivität und verfahren dazu
DE10004196A1 (de) Elektronische Halbbrücken-Moduleinheit
EP1088386B1 (fr) Bloc de composants a demi-pont
EP1083599B1 (fr) Dispositif semiconducteur de puissance
DE102008047028B4 (de) Schaltungsanordnung zur Ansteuerung eines Leistungshalbleiterschalters und Halbleitermodul
DE102021203144A1 (de) Leistungsmodul für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Inverter mit einem solchen Leistungsmodul
DE102020132919A1 (de) Halbleitervorrichtung
DE102009002732B4 (de) Schaltungsanordnung mit zwei Halbleiterschaltelementen und einem Freilaufelement sowie zugehöriger Schaltwandler
DE102020102927A1 (de) Halbleiter mit integrierten elektrisch leitfähigen kühlkanälen
DE102020204358A1 (de) Halbbrückenmodul für einen Inverter eines elektrischen Antriebs eines Elektrofahrzeugs oder eines Hybridfahrzeugs und Inverter für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs
DE102019200965A1 (de) Leistungsmodul, das eine aktive miller-clamp-funktion aufweist
DE10054489A1 (de) Leistungs-Umrichtermodul
DE10326321A1 (de) Elektronische Baugruppe zum Schalten elektrischer Leistung
DE102021203704A1 (de) Halbbrücke, Leistungsmodul und Inverter für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs
DE10204882A1 (de) Halbbrückenschaltung
DE3411712C2 (fr)
WO2002013260A2 (fr) Circuit comprenant au moins deux corps semi-conducteurs et un corps de refroidissement
DE102020216506A1 (de) Halbbrücke mit einer U- oder V-förmigen Anordnung von Halbleiterschaltelementen für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter
DE102020207709A1 (de) Steuergerät zum Betreiben eines Elektroantriebs für ein Fahrzeug und Verfahren zum Herstellen eines deratigen Steuergeräts
DE102021209725A1 (de) Schaltermodul für eine Inverteranordnung, Inverteranordnung mit dem Schaltermodul sowie Fahrzeug mit der Inverteranordnung
DE102021209724A1 (de) Inverteranordnung für ein Fahrzeug sowie Fahrzeug mit der Inverteranordnung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20021206

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

RBV Designated contracting states (corrected)

Designated state(s): AT BE CH CY DE DK ES FR GB IT LI SE

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20090414