EP1291989A4 - Dispositif photoemissif a semiconducteur de nitrure et appareil optique comprenant ce composant - Google Patents

Dispositif photoemissif a semiconducteur de nitrure et appareil optique comprenant ce composant

Info

Publication number
EP1291989A4
EP1291989A4 EP01926138A EP01926138A EP1291989A4 EP 1291989 A4 EP1291989 A4 EP 1291989A4 EP 01926138 A EP01926138 A EP 01926138A EP 01926138 A EP01926138 A EP 01926138A EP 1291989 A4 EP1291989 A4 EP 1291989A4
Authority
EP
European Patent Office
Prior art keywords
nitride semiconductor
emitting device
semiconductor light
same
apparatus including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01926138A
Other languages
German (de)
English (en)
Other versions
EP1291989A1 (fr
EP1291989B1 (fr
Inventor
Yuhzoh Tsuda
Takayuki Yuasa
Shigetoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of EP1291989A1 publication Critical patent/EP1291989A1/fr
Publication of EP1291989A4 publication Critical patent/EP1291989A4/fr
Application granted granted Critical
Publication of EP1291989B1 publication Critical patent/EP1291989B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Abstract

La présente invention concerne un dispositif photoémissif à semiconducteur de nitrure qui comprend une couche (106) photoémissive possédant une structure à puits quantiques multiples dans laquelle les couches de puits quantiques et les couches limite sont formées en alternance. La composition du matériau de la couche de puits quantiques est représentée par la formule suivante: XN¿1-x-y-z?AsxPySbz (0 ≤ x ≤ 0,15, 0 ≤ y ≤ 0,2, 0 ≤ z ≤ 0,05, x + y + z > 0). Dans cette formule x représente un ou plusieurs types d'éléments du groupe III, et les couches limite sont constituées d'un semiconducteur de nitrure contenant au moins A1.
EP01926138A 2000-05-29 2001-05-07 Dispositif photoemissif a semiconducteur de nitrure et appareil optique comprenant ce composant Expired - Lifetime EP1291989B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000158189A JP2001339121A (ja) 2000-05-29 2000-05-29 窒化物半導体発光素子とそれを含む光学装置
JP2000158189 2000-05-29
PCT/JP2001/003825 WO2001093388A1 (fr) 2000-05-29 2001-05-07 Dispositif photoemissif a semiconducteur de nitrure et appareil optique comprenant ce composant

Publications (3)

Publication Number Publication Date
EP1291989A1 EP1291989A1 (fr) 2003-03-12
EP1291989A4 true EP1291989A4 (fr) 2005-05-04
EP1291989B1 EP1291989B1 (fr) 2006-12-13

Family

ID=18662702

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01926138A Expired - Lifetime EP1291989B1 (fr) 2000-05-29 2001-05-07 Dispositif photoemissif a semiconducteur de nitrure et appareil optique comprenant ce composant

Country Status (5)

Country Link
US (1) US6924512B2 (fr)
EP (1) EP1291989B1 (fr)
JP (1) JP2001339121A (fr)
KR (1) KR100537711B1 (fr)
WO (1) WO2001093388A1 (fr)

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JP2003332688A (ja) * 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
JP4416648B2 (ja) * 2002-05-17 2010-02-17 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 発光素子の製造方法
JP4403067B2 (ja) * 2002-05-17 2010-01-20 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 超臨界アンモニアを用いるバルク単結晶生産設備
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KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
KR200483212Y1 (ko) 2014-06-17 2017-04-17 주식회사 어소시에이츠 엘작 중앙 분리대
JP6570702B1 (ja) 2018-05-29 2019-09-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
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Also Published As

Publication number Publication date
US6924512B2 (en) 2005-08-02
KR100537711B1 (ko) 2005-12-20
WO2001093388A1 (fr) 2001-12-06
JP2001339121A (ja) 2001-12-07
US20030136957A1 (en) 2003-07-24
EP1291989A1 (fr) 2003-03-12
EP1291989B1 (fr) 2006-12-13
KR20030007702A (ko) 2003-01-23

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