EP1126470A3 - Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt - Google Patents

Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt Download PDF

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Publication number
EP1126470A3
EP1126470A3 EP01100917A EP01100917A EP1126470A3 EP 1126470 A3 EP1126470 A3 EP 1126470A3 EP 01100917 A EP01100917 A EP 01100917A EP 01100917 A EP01100917 A EP 01100917A EP 1126470 A3 EP1126470 A3 EP 1126470A3
Authority
EP
European Patent Office
Prior art keywords
memory
lines
charging line
column
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01100917A
Other languages
English (en)
French (fr)
Other versions
EP1126470B1 (de
EP1126470A2 (de
Inventor
Robert Esterl
Heinz Hönigschmid
Helmut Kandolf
Thomas Dr. Röhr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1126470A2 publication Critical patent/EP1126470A2/de
Publication of EP1126470A3 publication Critical patent/EP1126470A3/de
Application granted granted Critical
Publication of EP1126470B1 publication Critical patent/EP1126470B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

Ein integrierter Halbleiterspeicher weist Speicherzellen (MC) mit ferroelektrischem Speichereffekt auf, die zu Einheiten von Spaltenleitungen (BL1, BL2) und Zeilenleitungen (WL1, WL2) zusammengefaßt sind. Die Speicherzellen (MC) sind jeweils zwischen eine der Spaltenleitungen (BL1) und eine Ladeleitung (PL1) geschaltet. Die Spaltenleitung (BL1) ist an einen Leseverstärker (2) angeschlossen, an dem ein Ausgangssignal (S21) abgreifbar ist, die Ladeleitung (PL1) ist mit einer Treiberschaltung (3) verbunden, durch die die Ladeleitung (PL1) an einem vorgegebenen Potential (V1, GND) anliegt. Die Spaltenleitung (BL1) und die Ladeleitung (PL1) sind in einer inaktiven Betriebsart gemeinsam im Leseverstärker (2) oder in der Treiberschaltung (3) mit einem Anschluß (22) für ein gemeinsames Versorgungspotential (GND) verbunden. Dadurch ist ein relativ schneller Potentialausgleich zwischen den Leitungen (BL1, PL1) möglich. Es kann dadurch eine unbeabsichtigte Veränderung des Speicherzelleninhalts infolge von Störspannungen vergleichsweise gering gehalten werden.
EP01100917A 2000-02-09 2001-01-16 Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt Expired - Lifetime EP1126470B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10005619 2000-02-09
DE10005619A DE10005619A1 (de) 2000-02-09 2000-02-09 Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt

Publications (3)

Publication Number Publication Date
EP1126470A2 EP1126470A2 (de) 2001-08-22
EP1126470A3 true EP1126470A3 (de) 2003-02-05
EP1126470B1 EP1126470B1 (de) 2007-11-28

Family

ID=7630290

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01100917A Expired - Lifetime EP1126470B1 (de) 2000-02-09 2001-01-16 Integrierter Halbleiterspeicher mit Speicherzellen mit ferroelektrischem Speichereffekt

Country Status (7)

Country Link
US (1) US6515890B2 (de)
EP (1) EP1126470B1 (de)
JP (1) JP2001283585A (de)
KR (1) KR100796847B1 (de)
CN (1) CN1265393C (de)
DE (2) DE10005619A1 (de)
TW (1) TW512338B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100527571B1 (ko) * 2002-08-30 2005-11-09 주식회사 하이닉스반도체 불휘발성 메모리 칩의 저전압 감지 수단 및 감지 방법,그리고 그 감지 수단을 이용하는 저전압 감지 시스템
US7269048B2 (en) 2003-09-22 2007-09-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JP4672702B2 (ja) * 2003-09-22 2011-04-20 株式会社東芝 半導体集積回路装置
JP4074279B2 (ja) * 2003-09-22 2008-04-09 株式会社東芝 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変ｌｓｉ装置、ｉｃカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置
JP4901385B2 (ja) * 2006-09-14 2012-03-21 株式会社東芝 半導体記憶装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709851A2 (de) * 1994-10-27 1996-05-01 Nec Corporation Speicherdaten-Sicherung für ferroelektrischen Speicher
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
US5892706A (en) * 1994-08-29 1999-04-06 Kabushiki Kaisha Toshiba Fram, fram card, and card system using the same
DE19832994A1 (de) * 1998-07-22 2000-01-27 Siemens Ag Ferroelektrische Speicheranordnung
EP0994486A2 (de) * 1998-10-13 2000-04-19 Sharp Kabushiki Kaisha Halbleiterspeicheranordnung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892706A (en) * 1994-08-29 1999-04-06 Kabushiki Kaisha Toshiba Fram, fram card, and card system using the same
EP0709851A2 (de) * 1994-10-27 1996-05-01 Nec Corporation Speicherdaten-Sicherung für ferroelektrischen Speicher
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
DE19832994A1 (de) * 1998-07-22 2000-01-27 Siemens Ag Ferroelektrische Speicheranordnung
EP0994486A2 (de) * 1998-10-13 2000-04-19 Sharp Kabushiki Kaisha Halbleiterspeicheranordnung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HIROKI FUJISAWA ET AL: "THE CHARGE-SHARE MODIFIED PRECHARGE-LEVEL(CSM) ARCHITECTURE FOR HIGH-SPEED AND LOW-POWER FERROELECTRIC MEMORY", 1996 SYMPOSIUM ON VLSI CIRCUITS. DIGEST OF TECHNICAL PAPERS. HONOLULU, JUNE 13 - 15, 1996, SYMPOSIUM ON VLSI CIRCUITS, NEW YORK, IEEE, US, vol. SYMP. 10, 13 June 1996 (1996-06-13), pages 50 - 51, XP000639013, ISBN: 0-7803-3340-3 *

Also Published As

Publication number Publication date
US20010038561A1 (en) 2001-11-08
KR100796847B1 (ko) 2008-01-22
CN1265393C (zh) 2006-07-19
KR20010100781A (ko) 2001-11-14
DE50113306D1 (de) 2008-01-10
TW512338B (en) 2002-12-01
DE10005619A1 (de) 2001-08-30
CN1308338A (zh) 2001-08-15
JP2001283585A (ja) 2001-10-12
EP1126470B1 (de) 2007-11-28
EP1126470A2 (de) 2001-08-22
US6515890B2 (en) 2003-02-04

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