EP1115164A2 - Dispositif magnétorésistif et mémoire magnétique à partir de ce dispositif - Google Patents

Dispositif magnétorésistif et mémoire magnétique à partir de ce dispositif Download PDF

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EP1115164A2
EP1115164A2 EP01100253A EP01100253A EP1115164A2 EP 1115164 A2 EP1115164 A2 EP 1115164A2 EP 01100253 A EP01100253 A EP 01100253A EP 01100253 A EP01100253 A EP 01100253A EP 1115164 A2 EP1115164 A2 EP 1115164A2
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magnetic
layer
magnetic layer
current lines
devices
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EP1115164A3 (fr
EP1115164B1 (fr
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Hidekazu Hayashi
Masashi Michijima
Ryoji Minakata
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Sharp Corp
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Sharp Corp
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Priority claimed from JP2000001189A external-priority patent/JP3574773B2/ja
Priority claimed from JP2000037527A external-priority patent/JP3544638B2/ja
Priority claimed from JP2000085563A external-priority patent/JP3758933B2/ja
Priority claimed from JP2000090495A external-priority patent/JP3653442B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetoresistive element or device using a magnetic layer having perpendicular magnetic anisotropy, and also to a magnetic memory using the magnetoresistive devices.
  • the invention further relates to a recording method for such magnetic memories.
  • GMR Global MagnetoResistive
  • TMR Tunnelel MagnetoResistive
  • the TMR device is made up by stacking a first magnetic layer 31, an insulating layer 32, a second magnetic layer 33 and an antiferromagnetic layer 34.
  • the first magnetic layer 31 and the second magnetic layer 33 are ferromagnetics made of Fe, Co, Ni or alloys of these
  • the antiferromagnetic layer 34 is made of FeMn, NiMn or the like
  • the insulating layer 32 is made of Al 2 O 3 .
  • a magnetoresistive device using a magnetic layer having perpendicular magnetic anisotropy is disclosed in Japanese Patent Laid-Open Publication HEI 11-213650.
  • the device structure as taught in this publication is shown in Fig. 2.
  • the magnetoresistive device is so structured that a nonmagnetic layer 42 is sandwiched between a first magnetic layer 41 formed of a perpendicularly magnetized film having a low coercive force and a second magnetic layer 43 formed of a perpendicularly magnetized film having a high coercive force.
  • the first and second magnetic layers are provided by using a ferrimagnetic film made of rare earth - transition element alloys, a garnet film, PtCo, PdCo or the like.
  • a first object of the present invention is to provide a magnetoresistive device, as well as a magnetic memory using the magnetoresistive device, which allows a magnetic layer to be maintained in a stable magnetized state without being affected by a leakage magnetic field applied from the other magnetic layer through an insulating layer.
  • the perpendicular magnetic anisotropy energy of the magnetic film be as large as possible.
  • this normally causes the coercive force to also increase concurrently. Accordingly, when a conventional magnetoresistive device having a sufficiently stabilized perpendicularly magnetized film is applied to a magnetic memory, the coercive force of the recording layer will be excessively increased, which would make it hard to perform magnetization reversal by a magnetic field generated by a recording current.
  • a second object of the present invention is to provide a magnetoresistive device, as well as a magnetic memory using the magnetoresistive device, which has a coercive force of such a magnitude as to allow the magnetization reversal to be performed and which stably holds magnetized information stored in its recording layer.
  • the device of Fig. 3 is made up of a first magnetic layer 21, a nonmagnetic layer 22 and a second magnetic layer 23.
  • the first magnetic layer 21 is a memory layer
  • information recording to the device is fulfilled by passing electric currents through write or recording lines 24, 25 provided on both sides of the device to thereby make the magnetization of the first magnetic layer 21 reversed by the magnetic fields generated from the current lines.
  • currents are passed through the recording line 24 frontward of the drawing sheet, namely toward a direction in which a front side of the drawing sheet is facing, and through the recording line 25 backward of the drawing sheet, namely toward a direction in which a reverse side of the drawing sheet is facing. Since the resultant of the magnetic fields 27 generated from these two current lines is directed upward of the device, magnetization of the first magnetic layer 21 can be directed upward of the device.
  • the recording lines are located on both sides of the device as shown in Fig. 3, with a wiring rule (F) used, the distance between the adjoining devices is 4F.
  • the distance between the adjoining devices is 2F. From the viewpoint that high integration of devices is of importance for memory fabrication, the arrangement of the magnetic memory of Fig. 3 is disadvantageous to the increase of the integration.
  • a third object of the present invention is to provide a magnetic memory having a higher level of integration than the conventional counterpart, and a recording method therefor, which memory allows information to be recorded to devices or memory cells at points of intersection in a matrix-form arrangement of devices.
  • the present invention provides a magnetoresistive device comprising a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer being interposed between the first and second magnetic layers, the first and second magnetic layers having perpendicular magnetic anisotropy, characterized in that: the magnetoresistive device has a structure such that magnetization information can be recorded thereto and that recorded magnetization information is stably maintained therein.
  • either the first magnetic layer or the second magnetic layer is made of a ferrimagnetic that has a compensation point around a room temperature.
  • the first magnetic layer is made of a ferromagnetic having a low coercive force as well as perpendicular magnetic anisotropy
  • the second magnetic layer is made of a ferromagnetic having a high coercive force as well as perpendicular magnetic anisotropy
  • the ferromagnetic forming the second magnetic layer is a rare earth metal - transition metal amorphous alloy that has a small saturation magnetization.
  • the first magnetic layer is made of a ferromagnetic having a coercive force low enough to allow magnetization reversal of the first magnetic layer and a magnetic anisotropy energy high enough to maintain the perpendicular magnetic anisotropy of the first magnetic layer.
  • magnetoresistive devices with this construction can provide a magnetic memory that is rewritable and that can stably hold recorded information.
  • the magnetoresistive device further comprises a third magnetic layer having perpendicular magnetic anisotropy and a second nonmagnetic layer which is interposed between the second and third magnetic layers.
  • the second magnetic layer is made of a ferromagnetic having a coercive force low enough to allow magnetization reversal of the second magnetic layer and a magnetic anisotropy energy high enough to maintain the perpendicular magnetic anisotropy of the second magnetic layer.
  • the present invention also provides a magnetic memory using, as memory cells, the magnetoresistive devices of any type as described above.
  • the present invention provides a magnetic memory using magnetoresistive devices, each magnetoresistive device having a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer being interposed between the first and second magnetic layers, the first and second magnetic layers having perpendicular magnetic anisotropy, characterized in that: current lines for recording information to the magnetoresistive devices are provided in planes upper and lower than a plane on which the magnetoresistive devices are located.
  • the current lines may be positioned directly above and below the magnetoresistive devices.
  • the current lines may be positioned obliquely above and below the magnetoresistive devices such that they are located in positions between mutually adjacent magnetoresistive devices.
  • the magnetoresistive devices are arranged in matrix shape, and the current lines in the upper plane extend in a direction crossing a direction in which the current lines in the lower plane extend.
  • a layer of a high permeability material may be provided on each of the current lines. In this case, due to the presence of the high permeability layer, recording to the memory can be effectively performed.
  • electric currents are passed through two current lines that are positioned in the upper plane and adjacent to a selected magnetoresistive device while electric currents are passed through two current lines that are positioned in the lower plane and adjacent to the selected magnetoresistive device so that information is recorded to the selected magnetoresistive device.
  • Fig. 4 schematically shows the structure of a magnetoresistive device according to the present-invention.
  • the magnetoresistive device of this embodiment has a first magnetic layer 111, a nonmagnetic layer 112 and a second magnetic layer 113.
  • Both the first magnetic layer 111 and the second magnetic layer 113 are ferromagnetics made of a perpendicularly magnetized film of RE and iron-group TM (Transition Metal) amorphous alloy, i.e., ferrimagnets.
  • RE and iron-group TM Transition Metal
  • the RM-TM material is exemplified by binary alloys (GdFe, TbFe, GdCo, TbCo, etc.) or ternary alloys (GdFeCo, TbFeCo, GdTbFe, GdTbCo, etc.).
  • the first magnetic layer 111 is a memory layer
  • the first magnetic layer should have a coercive force Hc low enough to enable rewrite by the write magnetic field and moreover a certain level of saturation magnetization Ms and that the second magnetic layer 113 should have a small saturation magnetization Ms and a large coercive force Hc such that the influence on the first magnetic layer 111 can be reduced and that influences of external magnetic fields are kept away.
  • Fig. 5 shows the composition dependence of the saturation magnetization Ms and coercive force Hc at a room temperature of TbCo amorphous alloy film as an example of binary alloys of RE-TM materials.
  • the second magnetic layer 113 when an amorphous alloy film having a Tb content of 20 - 23 atomic %, i.e., an amorphous alloy film having the compensation point around the room temperature is selected as the second magnetic layer 113, the second magnetic layer 113 satisfies the above conditions.
  • the Tb contents other than the above are suitable to satisfy the conditions.
  • nonmagnetic layer 112 either a nonmagnetic layer having electrical conductivity, such as Cu, used for conventional GMR devices or an Al 2 O 3 film used for conventional TMR devices may be used.
  • the nonmagnetic layer when an oxide film is used as the nonmagnetic layer, there is a risk that the rare earth metal used in the magnetic layer may be oxidized. Therefore, it is recommended to use, as the insulative nonmagnetic layer, a nitride film of AlN, BN or the like or an insulative film having covalent bonds of diamond, DLC (Diamond-Like Carbon) or the like.
  • the nonmagnetic layer 112 when implemented by an insulating layer, is enabled to have a larger rate of change of magnetoresistance.
  • the first magnetic layer 111 and the second magnetic layer 113 when too thin in film thickness, go superparamagnetic by the effect of thermal energy. Therefore, the film thickness of the magnetic layers needs to be not less than 50 ⁇ . When those magnetic layers are too thick in film thickness, it would be difficult to fabricate micro devices. Thus, the film thickness of the magnetic layers is preferably not more than 5000 ⁇ .
  • the film thickness of the nonmagnetic layer 112 is preferably 5 ⁇ or more, but 30 ⁇ or less.
  • the film thickness is preferably not more than 50 ⁇ .
  • the first magnetic layer 111 and the second magnetic layer 113 are used as the first magnetic layer 111 and the second magnetic layer 113 in the above case, it is also possible to use, as the first magnetic layer, common ferromagnetics having perpendicular magnetic anisotropy such as CoCr or CoPt.
  • the magnetoresistive devices In applications of the magnetoresistive devices to magnetic memories as memory cells, quite a large coercive force Hc would result due to the selection of a composition having its compensation point near the room temperature as the second magnetic layer 113. But, the magnetoresistive devices can easily be initialized by application of a magnetic field under heating up to near the Curie point.
  • Fig. 6 schematically shows the structure of a magnetoresistive device according to Embodiment 2 of the invention.
  • the magnetoresistive device of the embodiment is essentially made up of a first magnetic layer 211, a nonmagnetic layer 212 and a second magnetic layer 213. Both the first magnetic layer 211 and the second magnetic layer 213 are made of a perpendicularly magnetized film of RE and iron-group TM amorphous alloys.
  • the first magnetic layer 211 should have a coercive force Hc low enough to enable rewrite by the write magnetic field, and a magnetic anisotropy energy of a magnitude enough to keep the perpendicular magnetic anisotropy.
  • the second magnetic layer 113 preferably has a small saturation magnetization Ms and a large coercive force Hc such that the influence of the second magnetic layer on the first magnetic layer 211 can be reduced and that the second magnetic layer is not affected by external magnetic fields.
  • the perpendicular magnetic anisotropy energy K ⁇ and the coercive force Hc show similar tendencies. As the perpendicular magnetic anisotropy energy K ⁇ increases, the coercive force Hc tends to also increase. On the other hand, as the coercive force Hc goes smaller, the perpendicular magnetic anisotropy energy K ⁇ also goes smaller.
  • Fig. 7 shows the composition dependence of the coercive force Hc at a room temperature of a PrCo amorphous alloy film.
  • the coercive force Hc of the PrCo amorphous alloy film is around 100 Oe, which is a value permitting magnetization reversal fully by a recording current magnetic field in a magnetic memory.
  • Fig. 8 shows the Pr content dependence of the perpendicular magnetic anisotropy energy K ⁇ at the room temperature of the PrCo amorphous alloy film.
  • the perpendicular magnetic anisotropy energy K ⁇ has a value resulting from subtracting the diamagnetic field energy, 2 ⁇ Ms 2 , from the perpendicular magnetic anisotropy energy, Ku, proper to the PrCo amorphous alloy film.
  • the perpendicular magnetic anisotropy energy K ⁇ takes a positive value, the resulting magnetization of PrCo amorphous alloy film becomes stable in the perpendicular direction.
  • a perpendicularly magnetized film results with the Pr content being about 20 atomic % or higher, and that particularly with the Pr content falling in a range of about 20 - 30 atomic %, a large perpendicular magnetic anisotropy energy K ⁇ can be obtained, resulting in a stable perpendicularly magnetized film.
  • Fig. 9 shows the RE content dependence of the coercive force Hc of a TbPrCo amorphous alloy film at a room temperature.
  • Fig. 10 shows the RE content dependence of the perpendicular magnetic anisotropy energy K ⁇ at the room temperature of the TbPrCo amorphous alloy film.
  • the RE content should be 15 atomic % or more, but 35 atomic % or less.
  • the perpendicular magnetic anisotropy energy K ⁇ shows a positive value at all of the RE contents shown in Fig. 10, and that a stable perpendicularly magnetized film is provided by the RE content range of 10 - 30 atomic % in particular.
  • materials suitable for the first magnetic layer 211 are exemplified by binary alloys (PrFe, PrCo, etc.) or ternary alloys (PrGdFe, PrGdCo, PrTbFe, PrTbCo, PrFeCo etc.) containing at least a light rare earth metal such as Pr.
  • materials suitable for the second magnetic layer 213 are exemplified by binary alloys (TbFe, TbCo, GdFe, GdCo, etc.) or ternary alloys (GdTbFe, GdTbCo, TbFeCo, etc.) containing principally a heavy rare earth metals, such as Tb, Gd, as the rare earth metal.
  • both the coercive force Hc and the perpendicular magnetic anisotropy energy K ⁇ are, desirably, as large as possible from the viewpoint of stability. Accordingly, it can be understood from Figs. 9 and 10 that TbPrCo amorphous alloy film, when used, preferably should have a RE content of 13 - 32 atomic %.
  • the saturation magnetization Ms is almost all dissipated, by which the effect on the first magnetic layer 211 can be avoided. Further, the magnetization of RE and TM sublattices is maintained sufficiently large by virtue of ferrimagnetism of the RE-TM alloy material. Since the magnetoresistance effect could be attributed principally to TM, a sufficiently large magnetoresistance effect can be obtained even with the composition having around the room temperature its compensation point at which the saturation magnetization Ms is dissipated.
  • the magnetoresistive devices In application of the magnetoresistive devices to a magnetic memory as memory cells, quite a large coercive force Hc would result due to the selection of a composition whose compensation point is around the room temperature as the second magnetic layer 213.
  • the memory can easily be initialized by applying a magnetic field while heating up to near the Curie point.
  • nonmagnetic layer 212 either a nonmagnetic layer having electrical conductivity, such as Cu, used for conventional GMR devices or an insulating nonmagnetic layer such as an Al 2 O 3 film used for conventional TMR devices may be used.
  • the nonmagnetic layer when an oxide film is used as the nonmagnetic layer, there is a risk that the rare earth metal used in the magnetic layer may be oxidized. Therefore, it is preferred to use, as the insulating nonmagnetic layer, a nitride film of AlN, BN or the like or an insulative film having covalent bonds of diamond, DLC or the like.
  • the film thickness of the nonmagnetic layer 212 is preferably 5 ⁇ or more, but 30 ⁇ or less.
  • the film thickness is preferably not more than 50 ⁇ .
  • the material of the second magnetic layer 213 is not limited to the RE-TM alloy materials of this embodiment, and apparently other materials may also be used.
  • Fig. 11 schematically shows the structure of a magnetoresistive device according to Embodiment 3 of the invention.
  • the magnetoresistive device of the embodiment is essentially made up of a first magnetic layer 221, a first nonmagnetic layer 222, a second magnetic layer 223, a second nonmagnetic layer 224 and a third magnetic layer 225. All of the first magnetic layer 221, the second magnetic layer 223 and the third magnetic layer 225 are made of a perpendicularly magnetized film of an RE and iron-group TM amorphous alloy, i.e., a ferrimagnetic.
  • the second magnetic layer 223 is a memory layer
  • the second magnetic layer 223 should have such a coercive force Hc low enough to enable rewrite by the write magnetic field, and a perpendicular magnetic anisotropy energy K ⁇ of such a level as to enable the holding of perpendicular magnetic anisotropy.
  • the first magnetic layer 221 and the third magnetic layer 225 desirably have a small saturation magnetization Ms and a large coercive force Hc that their influences on the second magnetic layer 223 can be reduced and, at the same time, that the layers 221 and 225 are not affected by external magnetic fields.
  • materials suitable for the second magnetic layer 223, which serves as a memory layer are exemplified by binary alloys (PrFe, PrCo, etc.) or ternary alloys (PrGdFe, PrGdCo, PrTbFe, PrTbCo, PrFeCo etc.) containing at least a light rare earth metal such as Pr as the rare earth metal.
  • materials suitable for the first magnetic layer 221 and the third magnetic layer 225 are exemplified by binary alloys (TbFe, TbCo, GdFe, GdCo, etc.) or ternary alloys (GdTbFe, GdTbCo, PrTbCo, TbFeCo, etc.) containing principally a heavy rare earth metal, such as Tb, Gd, as the rare earth metal.
  • PrCo amorphous alloy is used as the second magnetic layer 223 and a case in which PrTbCo amorphous alloy is used as the second magnetic layer 223.
  • Fig. 12 shows the composition dependence of the coercive force Hc of a PrCo amorphous alloy film.
  • the PrCo amorphous alloy film exhibits a coercive force Hc of constantly around 100 Oe at all of the Pr contents, which indicates that the PrCo amorphous alloy film can be reversed in magnetization by a magnetic field resulting from the recording current.
  • Fig. 13 shows the Pr content dependence of the perpendicular magnetic anisotropy energy K ⁇ of the PrCo amorphous alloy film at a room temperature.
  • the perpendicular magnetic anisotropy energy K ⁇ has a value resulting from subtracting the diamagnetic field energy, 2 ⁇ Ms 2 , from the perpendicular magnetic anisotropy energy, Ku, proper to the PrCo amorphous alloy film.
  • the perpendicular magnetic anisotropy energy K ⁇ takes a positive value, the resulting magnetization of PrCo amorphous alloy film becomes stable in the perpendicular or vertical direction.
  • Fig. 14 shows the RE content dependence at room temperature of coercive force Hc of a PrTbCo amorphous alloy.
  • Fig. 15 shows the RE content dependence at room temperature of perpendicular magnetic anisotropy energy K ⁇ of PrTbCo amorphous alloy. It can be seen from Fig. 14 that if a level of coercive force Hc that does not allow the magnetization reversal of the magnetic layer against external magnetic fields is 800 Oe, then the RE content satisfying the above condition is 18 - 33 atomic %. On the other hand, it can also be understood from Fig. 15 that the perpendicular magnetic anisotropy energy K ⁇ shows a positive value at all points in the RE content range shown in Fig. 15, and that a stable perpendicularly magnetized film is provided by the RE content range of 10 - 30 atomic % in particular.
  • RE-TM materials having a compensation point around the room temperature may also be used as the first magnetic layer 221 and the third magnetic layer 225.
  • the saturation magnetization Ms is almost all dissipated at around the compensation point, but the magnetization of RE and TM sublattices is maintained sufficiently large by virtue of ferrimagnetism of the material.
  • the magnetoresistance effect could be attributed principally to TM, a sufficiently large magnetoresistance effect can be obtained even with a composition having around the room temperature its compensation point at which the saturation magnetization Ms is dissipated.
  • the magnetoresistive devices can easily be initialized by application of a magnetic field while heating up to near the Curie point.
  • nonmagnetic layers either a nonmagnetic layer having electrical conductivity, such as Cu, used for conventional GMR devices or an insulating film, such as an Al 2 O 3 film, used for conventional TMR devices may be used.
  • an insulating layer is used as the first and second nonmagnetic layers, a larger rate of change of magnetoresistance can be obtained.
  • RE-TM alloy which is a ferrimagnetic
  • common ferromagnetics having perpendicular magnetic anisotropy such as CoCr and CoPt.
  • ferrimagnetics having different coercive forces as the first, second and third magnetic layers.
  • a multi-valued memory can be implemented.
  • the magnetoresistive device of Embodiment 3 is capable of obtaining an MR ratio about twice higher than the magnetoresistive device of Embodiment 2.
  • Fig. 16 schematically shows the structure of a magnetic memory according to Embodiment 4 of the invention.
  • the magnetic memory of this embodiment has a structure that electric current lines 311 - 313, 317 - 319 for use of recording are placed above and below magnetoresistive devices, where each device is essentially made up of a first magnetic layer 314, a nonmagnetic layer 315 and a second magnetic layer 316.
  • the current lines 311, 312, 313 are placed above the devices, and the current lines 317, 318, 319 are placed below the devices. Information recording is done by using these current lines. For example, when recording information to a device 320, electric currents are passed through the current lines 311, 313 placed above the laterally adjacent devices and the current lines 317, 319 placed below the longitudinally adjacent devices 310, 330, whereby recording of the information to the memory layer of the device 320 is performed by the resultant of magnetic fields generated from these current lines. It is noted that the device is fabricated into a cylindrical configuration taking the stability of recording magnetization into consideration.
  • the structure of this embodiment is capable of higher integration, compared with the prior art.
  • the current lines 311 - 313, 317 - 319 are made of electrically conductive nonmagnetic material such as Al and Cu.
  • Both the first magnetic layer 314 and the second magnetic layer 316 are made of a perpendicularly magnetized film of RE (rare earth element)-TM (transition metal) amorphous alloy, or a perpendicularly magnetized film of CoCr-based alloy or other crystalline alloys.
  • the first magnetic layer 314 should have a coercive force Hc low enough to enable magnetization reversal by the write current lines, and also should maintain the perpendicular magnetic anisotropy.
  • Materials of the first magnetic layer 314 satisfying these conditions are exemplified by binary alloys (PrFe, PrCo, etc.) or ternary alloys (PrGdFe, PrGdCo, PrTbFe, PrTbCo, PrFeCo etc.) containing at least a light rare earth metal such as Pr.
  • the second magnetic layer 316 is required to, while maintaining the perpendicular magnetic anisotropy, have such a level of coercive force as not to cause the magnetization reversal by a magnetic field generated in writing.
  • Materials suitable for the second magnetic layer 316 satisfying these characteristics are exemplified by binary alloys (TbFe, TbCo, GdFe, GdCo, etc.) or ternary alloys (GdTbFe, GdTbCo, TbFeCo, etc.) containing principally heavy rare earth metals such as Tb and Gd as the rare earth metal, or further by common ferromagnetics having perpendicular magnetic anisotropy such as CoCr and CoPt.
  • the film thickness of the magnetic layers needs to be not less than 50 ⁇ .
  • the film thickness of the magnetic layers is preferably not more than 5000 ⁇ .
  • the nonmagnetic layer 315 either a nonmagnetic material having electrical conductivity, such as Cu, used for conventional GMR devices or an Al 2 O 3 film used for TMR devices may be used.
  • a nonmagnetic material having electrical conductivity such as Cu
  • an Al 2 O 3 film used for TMR devices may be used.
  • the film thickness of the nonmagnetic layer in the case of a TMR device, film thicknesses below 5 ⁇ would cause short-circuits of the magnetic layers, while film thicknesses above 30 ⁇ would make the electron tunneling phenomenon less likely to occur.
  • the film thickness of the nonmagnetic layer is preferably 5 ⁇ or more, but 30 ⁇ or less.
  • the film thickness is preferably not more than 50 ⁇ .
  • the current lines and the devices are insulated from each other by means of insulating nonmagnetic material such as SiO 2 .
  • magnetization information of "0" or "1" is recorded in correspondence to whether the first magnetic layer 314 is magnetized upward (Fig. 18A) or downward (Fig. 18B). Recording to a magnetoresistive device of this invention is done using the resultant of magnetic fields generated by passing electric currents through the current lines placed above the laterally adjacent devices and below the longitudinally adjacent devices.
  • Figs. 19 and 20 are sectional views showing devices arranged in the lateral direction and in the longitudinal direction, respectively, with a device to be recorded at the center. In this embodiment, recording is done by reversing the magnetization of the memory layer upward of the device.
  • recording to a memory layer 344 is done by using the resultant of magnetic fields generated from current lines 341, 343 placed above the devices adjacent in the lateral direction to the device to be recorded.
  • currents are passed through the current lines 341, 343 in directions opposite to each other.
  • information recording is done by reversing a magnetization direction 347 of the memory layer 344 of the device, currents are passed through the current line 341 frontward of the drawing sheet and through the current line 343 backward of the drawing sheet.
  • the magnetization direction 347 of the memory layer 344 is not reversed only by using magnetic fields 340 from the upper current lines 341, 343 alone.
  • Fig. 20 shows a state in which currents are passed through current lines placed below the devices. With currents passed through a current line 356 frontward of the drawing sheet and through a current line 358 backward of the drawing sheet, the resultant magnetic field is directed upward of the device (see arrow 359). Current lines 351, 352 are placed above devices located_laterally adjacent to the device to be recorded.
  • reference numeral 350 indicates a magnetic field generated
  • reference numerals 354 and 355 indicate a non-magnetic layer and the other magnetic layer, respectively
  • reference numeral 357 indicates a current line.
  • the magnetization of the memory layer can be reversed upward of the device by using at a recording point a resultant of magnetic fields generated from totally four upper and lower current lines as shown in Figs. 19 and 20.
  • the magnetoresistive device to which recording has been done in this way, shows a low resistance value when the magnetization of the first magnetic layer and the magnetization of the second magnetic layer are parallel to each other, and a high resistance value when those magnetizations are antiparallel from each other, as described above. Thus, the magnetoresistive device is distinguishable between the two recording states.
  • the write current lines which are insulated from the devices in Embodiment 4, may be used also for reading recorded information when used in magnetic memories. Alternatively, read current lines may be additionally provided to the structure of Embodiment 4.
  • the devices may be fabricated above transistors to constitute a magnetic memory, in which case one side of the devices has to be connected to a transistor.
  • current lines serving for both recording and reading may be connected to the other side of the devices, or additional current lines for reading may be added to the structure of Embodiment 4.
  • Fig. 21 schematically shows the structure of a magnetic memory according to Embodiment 5.
  • information is recorded to a magnetoresistive device using magnetic fields which are generated by passing electric currents through the recording current lines placed obliquely above and obliquely below the device.
  • the magnetoresistive device is essentially made up of a first magnetic layer 363, a nonmagnetic layer 364, and a second magnetic layer 365.
  • Current lines 361, 362 are placed obliquely above the device, while current lines 366, 367 are placed obliquely below the device.
  • the lower current lines 366 and 367 are placed between a line of the devices shown in the figure and another line of the device positioned on a side forward of the drawing sheet, and between the line of the devices shown in the figure and another line of the device positioned on a side backward of the drawing sheet.
  • Fig. 22 is a plan view.
  • the current lines 361, 362 are placed obliquely above a device 370, and the current lines 366, 367 are placed obliquely below the device 370.
  • the device is formed in a cylindrical shape as in Embodiment 4.
  • information recording to the device 370 is performed by passing currents through the current lines 361, 362 placed obliquely above the device and the current lines 366, 367 placed obliquely below the device such that magnetic fields generated from the latter current line are oriented in the same direction as the magnetic fields generated from the current lines 361, 362.
  • recording to a point of intersection in the device array pattern is performed.
  • magnetization information of "0" or "1" is recorded in correspondence to whether the memory layer is magnetized upward or downward.
  • the first magnetic layer is a memory layer and in which recording is done by reversing the magnetization of the memory layer upward of the device is explained.
  • Figs. 23 and 24 are sectional views showing devices arranged in the lateral direction and in the longitudinal direction, respectively, with a device to be recorded at the center.
  • the recording to the memory layer of the device to be recorded is done by passing currents through the four recording lines placed obliquely above and below the device, and by using the resultant of the magnetic fields 380 and 390 generated.
  • Fig. 23 shows a state in which currents are passed through current lines 381, 382 placed obliquely above the selected device. In this state, currents are passed through current lines 381, 382 in opposite directions. However, as in the case of Embodiment 4, when the recording is done by the magnetic fields 380 from the current lines 381, 382, the magnetization of the memory layer 383 is not reversed. Thus, the recording is done by combination of the magnetic fields 380 generated from the current lines 381, 382 with magnetic fields generated from current lines 386, 387 placed obliquely below the device.
  • reference numerals 384 and 385 indicate a non-magnetic layer and a magnetic layer, respectively.
  • Fig. 24 shows a state of magnetic fields 390 generated from the current lines obliquely below the device.
  • currents are also passed through current lines 396, 397 placed obliquely below the device in opposite directions.
  • reference numerals 394 and 395 indicate a non-magnetic layer and a magnetic layer, respectively.
  • the magnetic fields applied from the obliquely upper current lines and the obliquely lower current lines to the selected device are directed upward at all times as shown in Figs. 23 and 24, whereby the magnetization or magnetized state of the memory layer is reversed upward.
  • the magnetoresistive device shows a low resistance value when the magnetization of the first magnetic layer and the magnetization of the second magnetic layer are parallel to each other, and a high resistance value when those magnetizations are antiparallel from each other, as described above.
  • an insulating layer is provided between the write current lines and the magnetoresistive devices.
  • the write or recording current lines which are insulated from the devices in Embodiment 5, may be used also for reading recorded information when used in magnetic memories.
  • read current lines may be additionally provided to the structure of Embodiment 5, above and below of each device.
  • wiring to connect the recording current line to the device is required
  • the devices may be fabricated above transistors to constitute a magnetic memory, in which case one side of the devices has to be connected to a transistor.
  • current lines serving for both recording and reading may be connected to the other side of the devices, or additional current lines for reading may be added to the structure of Embodiment 5.
  • the present invention can provide a magnetic memory having higher integration and higher selectivity, as well as a recording method therefor.
  • Fig. 25 schematically shows the structure of a magnetic memory according to this embodiment.
  • the magnetic memory of this embodiment is composed of magnetoresistive devices each of which is essentially made up of a first magnetic layer 413, a nonmagnetic layer 414 and a second magnetic layer 415, and current lines 412, 416 placed above and below the respective devices.
  • high permeability layers 411, 417 are provided on an upper surface of the current lines 412 placed above the devices, and on a lower surface of the current lines 416 placed below the devices, respectively.
  • the provision of the high permeability layers 411, 417 to the current lines 412, 416 concentrates magnetic fields generated from the current lines to the recording layer of the magnetoresistive device, thus allowing an efficient recording to be achieved.
  • the distance between the adjacent devices is 2F when expressed by the minimum wiring rule F. That is, in the magnetic memory of Embodiment 6, the distance between the adjacent devices, namely the pitch of the devices. has been reduced to a half of the pitch 4F of a magnetic memory in which recording current lines are placed beside the devices as in the prior art. This indicates that according to this embodiment, high integration has been achieved.
  • the current lines 412, 416 are made of an electrically conductive nonmagnetic material such as Al or Cu. Also, as the material of the high permeability layers 411 and 417 provided on the upside of the current lines 412 and the downside of the current lines 416, NiFe, CoZrNb or the like can be used.
  • Both the first magnetic layer 412 and the second magnetic layer 415 are made of a perpendicularly magnetized film of a rare earth element (RE)-transition metal (TM) amorphous alloy, or a perpendicularly magnetized film of CoCr-based alloy or other crystalline alloys.
  • RE rare earth element
  • TM transition metal
  • the first magnetic layer 413 should have a coercive force Hc low enough to enable magnetization reversal by the current lines, and also should maintain the perpendicular magnetic anisotropy.
  • Materials of the first magnetic layer 413 satisfying these conditions are exemplified by binary alloys (CeCo, PrCo, etc.) containing a light rare earth metal such as Ce, Pr and a transition metal or ternary alloys (PrGdFe, PrGdCo, PrTbFe, PrTbCo, PrFeCo, etc.) containing a light rare earth metal, a heavy rare earth metal, and a transition metal.
  • the second magnetic layer 415 is required to, while maintaining the perpendicular magnetic anisotropy, have a coercive force large enough to resist full magnetization reversal by magnetic fields generated from the current lines.
  • Materials suitable for the second magnetic layer 415 satisfying these conditions are exemplified by binary alloys (TbFe, TbCo, GdFe, GdCo, etc.) composed principally of a transition metal and a heavy rare earth metal such as Tb and Gd as the rare earth metal, or ternary alloys (GdTbFe, GdTbCo, TbFeCo, etc.) composed of heavy rare earth metal - transition metal, or further ferromagnetics having perpendicular magnetic anisotropy such as CoCr and CoPt.
  • the first magnetic layer and the second magnetic layer have a film thickness of 50 ⁇ or more.
  • these magnetic layers have a film thickness of 5000A or less.
  • nonmagnetic layer 414 either a nonmagnetic material having electrical conductivity, such as Cu, used for conventional GMR devices or an Al 2 O 3 film used for TMR devices may be used.
  • a nonmagnetic material having electrical conductivity such as Cu
  • Al 2 O 3 film used for TMR devices may be used.
  • the film thickness of the nonmagnetic layer in the case of a TMR device, film thicknesses below 5 ⁇ would cause short-circuits of the magnetic layers, while film thicknesses above 30 ⁇ would make the electron tunneling phenomenon less likely to occur.
  • the film thickness of the nonmagnetic layer is preferably 5 ⁇ or more, but 30 ⁇ or less.
  • the film thickness is preferably not more than 50 ⁇ .
  • an insulating film is provided between the current lines and the magnetoresistive devices. This is intended to prevent a reproduction signal from deteriorating due to leakage to the recording current lines of a current that is passed through magnetic thin-film devices during a reproduction or read operation.
  • cylindrically-shaped devices are used in order to maintain the internal magnetized state of the magnetic layers stable.
  • magnetoresistive devices 421 - 425, current lines 426a - 426c, and current lines 427a - 427c are present on different planes, namely at different levels.
  • the current lines 426a, 426b, 426c are present on an upper plane which is located above a plane for the devices 421 - 425, and the current lines 427a, 427b, 427c are present on a lower plane below the plane for the devices 421 - 425.
  • the current lines 426a, 426b, 426c extend in a lateral direction above the devices 424, 422, 425, respectively, while the current lines 427a, 427b, 427c extend in a lateral direction below the devices 421, 422, 423 respectively.
  • Devices in columns are selected by passing currents through the recording current lines 426a and 426c. However, since devices in rows cannot be selected (in other words, all of the devices 421, 422, 423 will be selected), currents are passed through other two recording current lines 427a and 427c as well, by which the point 422 can be selected.
  • layers made of high permeability material are provided on the recording current lines 426a, 426b, 426c and under the recording current lines 427a, 427b, 427c.
  • a magnetoresistive device essentially made up of a first magnetic layer 431, a nonmagnetic layer 432 and a second magnetic layer 433, magnetization information of "0" or "1" is recorded in correspondence to whether the recording or memory layer (first magnetic layer 431) is magnetized upward (Fig. 27A) or downward (Fig. 27B).
  • the magnetoresistive device shows a low resistance value when the magnetization of the first magnetic layer 431 and the magnetization of the second magnetic layer 433 are parallel to each other as shown in Fig. 27A, and a high resistance value when the magnetization of the first magnetic layer 431 and the magnetization of the second magnetic layer 433 are antiparallel as shown in Fig. 27B.
  • Recording to a magnetoresistive device in this embodiment is done by using the resultant of the magnetic fields generated from current lines 443a, 443c placed above devices (each having layers 444 - 446) shown in Fig. 28 or current lines 456a, 456c placed below devices (each having layers 453 - 455) shown in Fig. 29.
  • currents are passed through the current lines 443a and 443c and through the current lines 456a and 456c in directions opposite to each other.
  • Magnetic fields 441 generated from the current lines 443a, 443c and magnetic fields 458 generated from the current lines 456a, 456c are formed elliptical thanks to the high permeability layers (442a, 442c, 457a, 457c) placed on the upside or the underside of the current lines.
  • the recording method shown above is for magnetizing the recording layers 444, 453 of the magnetoresistive device upward.
  • the recording layers 444, 453 can be magnetized downward just by reversing the directions in which the currents are passed through the recording current lines 443a, 443c, 456a and 456c shown in Figs. 28 and 29.
  • reference numerals 443b, 447, 456b, and 452 denote current lines and reference numerals 442b, 448, 457b, 451 denote high permeability layers.
  • read current lines are required.
  • the read current line needs to be connected with upper and lower sides of the device.
  • Such read current lines may be provided independently of the recording current lines, yet it is also possible to connect the recording current lines to the devices so that the recording current lines serve also as the read current lines.
  • the magnetoresistive devices For application of the magnetoresistive devices to magnetic memories, there has been discussed a structure that the devices are provided on transistors, in which case the underside of the device has to be connected to the transistor. Therefore, when the device is stacked on a transistor, the recording current line placed above the device can be used also as the read current line, but the recording current line placed below the device is present independently.
  • Fig. 30 schematically shows the structure of a magnetic memory according to Embodiment 7 of the invention.
  • the magnetic memory of this embodiment is composed of magnetoresistive devices each essentially made up of a magnetic layer 463, a nonmagnetic layer 464 and a magnetic layer 465, and current lines 462, 466 placed on a plane different from that of the devices and intermediate between the adjacent devices.
  • high permeability layers 461, 467 are provided on an upper surface of the current lines 462 placed above the devices, and on a lower surface of the current lines 466 placed below the devices, respectively.
  • the provision of the high permeability layers 461, 467 to the current lines 462, 466 concentrates magnetic fields generated from the current lines to the recording layer of the magnetoresistive device, thus allowing an efficient recording to be achieved.
  • the distance between the adjacent devices is 2F when expressed by the minimum wiring rule F. That is, in the magnetic memory of Embodiment 7 as well, the distance between the adjacent devices, namely the pitch of the devices has been reduced to a half of the pitch 4F of the prior art magnetic memory.
  • magnetoresistive devices 471 - 475 and recording current lines 476 - 479 are present on different planes, namely on different levels.
  • the current lines 476, 477 are present on an upper plane which is located above a plane for the devices 471 - 475.
  • the current line 476 is located equidistant from the devices 472 and 474 while the current line 477 is located equidistant from the devices 472 and 475.
  • the current lines 478, 479 are present on a lower plane below the plane for the devices 471 - 475.
  • the current line 478 is located equidistant from the devices 471 and 472 while the current line 479 is located equidistant from the devices 472 and 473.
  • Devices in columns are selected by passing currents through the recording current lines 476 and 477. However, since devices in rows cannot be selected (in other words, all of the devices 471, 472, 473 will be selected), currents are passed through other two recording current lines 478 and 479 as well, by which the point 472 can be selected.
  • layers made of high permeability material are provided on the recording current lines 476, 477 and under the current lines 478, 479.
  • Embodiment 7 Device structure and materials used for the magnetic memory in Embodiment 7 are the same as Embodiment 6.
  • the recording method in this embodiment will be described in detail with reference to Figs. 32 and 33.
  • Recording to a magnetoresistive device in this embodiment is done by using the resultant of the magnetic fields 482, 497 generated from current lines 483 placed above devices (each having layers 484 - 486) shown in Fig. 32 or current lines 496 placed below devices (each having layers 493 - 495) shown in Fig. 33. At this time, currents are passed through the current lines adjacent to each other in directions opposite to each other.
  • Magnetic fields 482 generated from the current lines 483 and magnetic fields 497 generated from the current lines 496 are formed elliptical thanks to the high permeability layers 481, 498 placed on the upside or the underside of the current lines.
  • high permeability material placed on the upside or the underside of the current lines like this, magnetic fields generated from the current lines are intercepted on the high permeability layer side. Therefore, the magnetic fields around the current lines become asymmetric, and apply a stronger magnetic field toward the device side. As a result, magnetization of the recording layer can be reversed more efficiently, compared with the case where no high permeability material is placed.
  • the recording method shown above is for magnetizing the recording layers 484, 493 of the magnetoresistive device upward.
  • the recording layers 484, 493 can be magnetized downward just by reversing the directions in which the currents are passed through the recording current lines 483, 496 shown in Figs. 32 and 33.
  • reference numerals 487, 492 denote current lines
  • reference numerals 488, 491 denote high permeability layers.
  • read current lines are required.
  • the read current line needs to be connected with upper and lower sides of the device.
  • Such read current lines may be provided independently of the recording current lines, yet it is also possible to connect the recording current lines to the devices so that the recording current lines serve also as the read current lines as well.
  • the magnetoresistive devices For application of the magnetoresistive devices to magnetic memories, there has been discussed a structure that the devices are superposed on transistors, in which case the underside of the device has to be connected to the transistor. Therefore, when the device is superposed on a transistor, the recording current line placed above the device can be used also as the read current line, but the recording current line placed below the device is present independently.
  • a magnetic memory as well as a method for recording to the magnetic memory, which is higher in integration and higher in recording efficiency than the prior art.
EP01100253A 2000-01-07 2001-01-03 Dispositif magnétorésistif et mémoire magnétique à partir de ce dispositif Expired - Lifetime EP1115164B1 (fr)

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JP2000001189A JP3574773B2 (ja) 2000-01-07 2000-01-07 磁気抵抗効果素子およびそれを用いた磁気メモリ
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JP2000024609 2000-02-02
JP2000024609 2000-02-02
JP2000037527A JP3544638B2 (ja) 2000-02-02 2000-02-16 磁気抵抗効果素子およびそれを用いた磁気メモリ
JP2000037527 2000-02-16
JP2000085563A JP3758933B2 (ja) 2000-03-27 2000-03-27 磁気メモリおよびその記録方法
JP2000085563 2000-03-27
JP2000090495A JP3653442B2 (ja) 2000-03-29 2000-03-29 磁気メモリおよびその記録方法
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1193778A2 (fr) * 2000-09-27 2002-04-03 Canon Kabushiki Kaisha Inversions de magnétisation pour film magnétique, films magnétorésitifs, et utilisations dans des mémoires magnétiques
EP1244118A2 (fr) * 2001-03-19 2002-09-25 Canon Kabushiki Kaisha Elément magnétorésistif et utilisation pour MRAM
FR2829868A1 (fr) * 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
EP1288958A3 (fr) * 2001-08-30 2003-07-09 Canon Kabushiki Kaisha Film magnétorésistif et mémoire utilisant ce dernier
WO2004075197A2 (fr) * 2003-01-14 2004-09-02 Infineon Technologies Ag Cellule de memoire mram
EP1514274A1 (fr) * 2002-04-23 2005-03-16 International Business Machines Corporation Dispositif de stockage memoire avec element de chauffage
WO2006055062A1 (fr) * 2004-11-18 2006-05-26 International Business Machines Corporation Element de memoire magnetique commutable a courant de spin et procede de fabrication de l’element de memoire
CN100447893C (zh) * 2002-07-29 2008-12-31 日本电气株式会社 磁随机存取存储器

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679593B2 (ja) * 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
US6713830B2 (en) * 2001-03-19 2004-03-30 Canon Kabushiki Kaisha Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
JP3592282B2 (ja) * 2001-10-01 2004-11-24 キヤノン株式会社 磁気抵抗効果膜、およびそれを用いたメモリ
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction
JP3769241B2 (ja) * 2002-03-29 2006-04-19 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US7207946B2 (en) * 2002-05-09 2007-04-24 Spiration, Inc. Automated provision of information related to air evacuation from a chest cavity
US6657890B1 (en) * 2002-06-21 2003-12-02 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7013536B2 (en) 2002-10-19 2006-03-21 General Motors Corporation Releasable fastener systems and processes
JP4015983B2 (ja) * 2002-10-19 2007-11-28 ゼネラル・モーターズ・コーポレーション 解除可能な付属品用の磁気粘性ナノ複合エラストマー
US7013538B2 (en) 2002-10-19 2006-03-21 General Motors Corporation Electroactive polymer releasable fastening system and method of use
US6944920B2 (en) * 2002-10-19 2005-09-20 General Motors Corporation Electrostatically releasable fastening system and method of use
US6983517B2 (en) * 2002-10-19 2006-01-10 General Motors Corporation Releasable fastener system
US7032282B2 (en) 2002-10-19 2006-04-25 General Motors Corporation Releasable fastener system
US6973701B2 (en) * 2002-10-19 2005-12-13 General Motors Corporation Releasable fastening system based on ionic polymer metal composites and method of use
US7140081B2 (en) * 2002-10-19 2006-11-28 General Motors Corporation Releasable fastener system
US7308738B2 (en) * 2002-10-19 2007-12-18 General Motors Corporation Releasable fastener systems and processes
US7146690B2 (en) * 2002-10-19 2006-12-12 General Motors Corporation Releasable fastener system
WO2004049344A2 (fr) * 2002-11-28 2004-06-10 Koninklijke Philips Electronics N.V. Procede et dispositif pour ameliorer la generation d'un champ magnetique au cours d'une operation d'ecriture dans une memoire magnetoresistive
FR2851668A1 (fr) * 2003-02-24 2004-08-27 St Microelectronics Sa Procede et dispositif de selection de mode de fonctionnement d'un circuit integre
US7173847B2 (en) * 2003-05-20 2007-02-06 Magsil Corporation Magnetic storage cell
US7219113B2 (en) * 2003-09-26 2007-05-15 International Business Machines Corporation Pseudo-random binary sequence checker with automatic synchronization
US6970379B2 (en) * 2003-10-14 2005-11-29 International Business Machines Corporation System and method for storing data in an unpatterned, continuous magnetic layer
JP4377751B2 (ja) * 2004-06-10 2009-12-02 シャープ株式会社 クロスポイント構造の半導体記憶装置及びその製造方法
JP2006196687A (ja) * 2005-01-13 2006-07-27 Tdk Corp 磁気メモリ
US20060261109A1 (en) * 2005-05-18 2006-11-23 Browne Alan L Cargo container including an active material based releasable fastener system
KR100695163B1 (ko) * 2005-10-06 2007-03-14 삼성전자주식회사 자기저항 효과를 이용한 상변화 메모리 소자와 그 동작 및제조 방법
US7929258B2 (en) * 2008-01-22 2011-04-19 Seagate Technology Llc Magnetic sensor including a free layer having perpendicular to the plane anisotropy
US7863700B2 (en) * 2008-06-30 2011-01-04 Qimonda Ag Magnetoresistive sensor with tunnel barrier and method
US7902616B2 (en) * 2008-06-30 2011-03-08 Qimonda Ag Integrated circuit having a magnetic tunnel junction device and method
US8790798B2 (en) 2011-04-18 2014-07-29 Alexander Mikhailovich Shukh Magnetoresistive element and method of manufacturing the same
US8758909B2 (en) 2011-04-20 2014-06-24 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US8541855B2 (en) * 2011-05-10 2013-09-24 Magic Technologies, Inc. Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
US9368176B2 (en) 2012-04-20 2016-06-14 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US9524765B2 (en) * 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion
US10128310B2 (en) * 2016-03-14 2018-11-13 Toshiba Memory Corporation Magnetoresistive memory device and manufacturing method of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5347485A (en) * 1992-03-03 1994-09-13 Mitsubishi Denki Kabushiki Kaisha Magnetic thin film memory
EP0959475A2 (fr) * 1998-05-18 1999-11-24 Canon Kabushiki Kaisha Mémoire magnétique à film mince et méthode d'enregistrement et de reproduction et appareil utilisant une telle mémoire

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09106514A (ja) 1995-10-06 1997-04-22 Fujitsu Ltd 強磁性トンネル素子及びその製造方法
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JP3351694B2 (ja) 1996-10-28 2002-12-03 日本ビクター株式会社 磁性メモリ
JP3679593B2 (ja) 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5347485A (en) * 1992-03-03 1994-09-13 Mitsubishi Denki Kabushiki Kaisha Magnetic thin film memory
EP0959475A2 (fr) * 1998-05-18 1999-11-24 Canon Kabushiki Kaisha Mémoire magnétique à film mince et méthode d'enregistrement et de reproduction et appareil utilisant une telle mémoire

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1193778A2 (fr) * 2000-09-27 2002-04-03 Canon Kabushiki Kaisha Inversions de magnétisation pour film magnétique, films magnétorésitifs, et utilisations dans des mémoires magnétiques
US7420839B2 (en) 2000-09-27 2008-09-02 Canon Kabushiki Kaisha Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film
EP1193778A3 (fr) * 2000-09-27 2006-08-16 Canon Kabushiki Kaisha Inversions de magnétisation pour film magnétique, films magnétorésitifs, et utilisations dans des mémoires magnétiques
US6853580B2 (en) 2001-03-19 2005-02-08 Canon Kabushiki Kaisha Magnetoresistive element and MRAM using the same
EP1244118A3 (fr) * 2001-03-19 2003-07-16 Canon Kabushiki Kaisha Elément magnétorésistif et utilisation pour MRAM
EP1244118A2 (fr) * 2001-03-19 2002-09-25 Canon Kabushiki Kaisha Elément magnétorésistif et utilisation pour MRAM
US6721201B2 (en) 2001-08-30 2004-04-13 Canon Kabushiki Kaisha Magnetoresistive film and memory using the same
EP1288958A3 (fr) * 2001-08-30 2003-07-09 Canon Kabushiki Kaisha Film magnétorésistif et mémoire utilisant ce dernier
FR2829868A1 (fr) * 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
WO2003025942A3 (fr) * 2001-09-20 2003-11-20 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
CN100592419C (zh) * 2001-09-20 2010-02-24 国家科研中心 使用非晶亚铁磁性合金、由自旋极化电流写入的磁存储器，及其写入方法
JP2005503669A (ja) * 2001-09-20 2005-02-03 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 非晶質フェリ磁性合金を使用してスピン偏極電流で書き込みを行なう磁気メモリ及びその書き込み方法
WO2003025942A2 (fr) * 2001-09-20 2003-03-27 Centre National De La Recherche Scientifique Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
US7332781B2 (en) 2001-09-20 2008-02-19 Centre National De La Recherche Scientifique Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
EP1514274A4 (fr) * 2002-04-23 2008-04-02 Ibm Dispositif de stockage memoire avec element de chauffage
EP1514274A1 (fr) * 2002-04-23 2005-03-16 International Business Machines Corporation Dispositif de stockage memoire avec element de chauffage
CN100447893C (zh) * 2002-07-29 2008-12-31 日本电气株式会社 磁随机存取存储器
WO2004075197A3 (fr) * 2003-01-14 2005-03-03 Infineon Technologies Ag Cellule de memoire mram
WO2004075197A2 (fr) * 2003-01-14 2004-09-02 Infineon Technologies Ag Cellule de memoire mram
WO2006055062A1 (fr) * 2004-11-18 2006-05-26 International Business Machines Corporation Element de memoire magnetique commutable a courant de spin et procede de fabrication de l’element de memoire

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CN1254870C (zh) 2006-05-03
EP1115164A3 (fr) 2002-06-12
EP1115164B1 (fr) 2005-05-25
DE60110944D1 (de) 2005-06-30
DE60110944T2 (de) 2006-04-27
US6628542B2 (en) 2003-09-30
US20010040819A1 (en) 2001-11-15
CN1310481A (zh) 2001-08-29

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