EP0921541B1 - Procédé de fabrication d'un noyau magnétique doux nanocristallin utilisable dans un disjoncteur différentiel et noyau magnétique obtenu - Google Patents
Procédé de fabrication d'un noyau magnétique doux nanocristallin utilisable dans un disjoncteur différentiel et noyau magnétique obtenu Download PDFInfo
- Publication number
- EP0921541B1 EP0921541B1 EP98402804A EP98402804A EP0921541B1 EP 0921541 B1 EP0921541 B1 EP 0921541B1 EP 98402804 A EP98402804 A EP 98402804A EP 98402804 A EP98402804 A EP 98402804A EP 0921541 B1 EP0921541 B1 EP 0921541B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- alloy
- magnetic
- heat treatment
- core
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 238000002425 crystallisation Methods 0.000 claims abstract description 18
- 230000008025 crystallization Effects 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 11
- 229910001004 magnetic alloy Inorganic materials 0.000 claims abstract description 10
- 230000005284 excitation Effects 0.000 claims abstract description 9
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 9
- 230000006698 induction Effects 0.000 claims abstract description 9
- 230000035699 permeability Effects 0.000 claims abstract description 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 9
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 229910052742 iron Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 239000010955 niobium Substances 0.000 claims description 11
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 abstract 2
- 229910000521 B alloy Inorganic materials 0.000 abstract 1
- NFCWKPUNMWPHLM-UHFFFAOYSA-N [Si].[B].[Fe] Chemical compound [Si].[B].[Fe] NFCWKPUNMWPHLM-UHFFFAOYSA-N 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000011282 treatment Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000002070 Raman circular dichroism spectroscopy Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
- H01F1/147—Alloys characterised by their composition
- H01F1/153—Amorphous metallic alloys, e.g. glassy metals
- H01F1/15341—Preparation processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
- H01F1/147—Alloys characterised by their composition
- H01F1/153—Amorphous metallic alloys, e.g. glassy metals
- H01F1/15333—Amorphous metallic alloys, e.g. glassy metals containing nanocrystallites, e.g. obtained by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0213—Manufacturing of magnetic circuits made from strip(s) or ribbon(s)
- H01F41/0226—Manufacturing of magnetic circuits made from strip(s) or ribbon(s) from amorphous ribbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H83/00—Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current
- H01H83/14—Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current operated by imbalance of two or more currents or voltages, e.g. for differential protection
- H01H83/144—Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current operated by imbalance of two or more currents or voltages, e.g. for differential protection with differential transformer
Definitions
- the present invention relates to a magnetic core of magnetic alloy soft nanocrystalline usable in particular for the manufacture of a circuit breaker Class A differential.
- Class A RCDs are self-contained RCDs sensitive not only to sinusoidal fault currents, but also to pulsed fault currents.
- These differential circuit breakers comprise a magnetic core of soft magnetic alloy having a maximum magnetic permeability of impedance ⁇ z at 50 Hertz high and a Br / Bm ratio of the residual induction to the induction at saturation of less than 0.2, and a good temperature stability of magnetic properties in the operating temperature range from - 25 ° C to + 100 ° C.
- the maximum magnetic permeability of impedance ⁇ z must be high, because the higher it is, the more it is possible to reduce the dimensions of the magnetic core and therefore to miniaturize the residual current device; ; the Br / Bm ratio must remain low to preserve the sensitivity of the circuit breaker to pulsed currents.
- the sensitivity of the circuit breaker to pulsed fault currents is all the better as the magnitudes ⁇ B stat and ⁇ B dyn are higher; ⁇ B stat and ⁇ B dyn being the amplitudes of variation of the magnetic induction generated by a half-wave rectified alternating excitation field in the first case and full wave in the second.
- Magnetic cores for class A residual current devices can be manufactured using a soft magnetic alloy of the type comprising more than 60 atoms% of iron, copper, silicon, boron and an element selected from niobium, titanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum, tungsten and manganese.
- These magnetic cores are obtained by casting the alloy in the form of an amorphous ribbon which is wound to form a torus, then subjected to a crystallization heat treatment intended to give the alloy a nanocrystalline structure, and, finally, subjected to a heat treatment under magnetic field parallel to the axis of the core applied continuously throughout the heat treatment, the heat treatment taking place at around 400 ° C.
- the magnetic cores thus obtained have a satisfactory temperature stability and a Br / Bm ratio of less than 0.2. However, they do not make it possible to obtain a magnetic permeability of ⁇ z impedance measured at 50 Hz in a maximum excitation field of 10 mA / cm (peak value) at 25 ° C greater than 170,000 nor values of ⁇ B stat and ⁇ B dyn greater than 0.19 Tesla for an excitation field with a maximum amplitude of 10 mA / cm, which limits the possibilities of miniaturization.
- DE 4,019,636 describes a process for improving the magnetic properties of amorphous ferromagnetic materials consisting in subjecting them continuously to an alternating magnetic field whose frequency is between 50 and 50 kHz, in sinusoidal form, at right angles or triangular and the current density between 10 and 500 A / cm 2 .
- the aim of the present invention is to remedy this drawback in The aim of the present invention is to remedy this drawback by proposing a means for manufacturing a magnetic core usable in a class A differential circuit breaker having both magnetic permeability impedance ⁇ z measured at 50 Hz in a maximum excitation field of 10 mA / cm (peak value) greater than 200,000 and values of ⁇ B stat and ⁇ B dyn greater than 0.2 Tesla for a field of maximum amplitude excitation of 10 mA / cm.
- the invention relates to a process for the manufacture of a core magnetic nanocrystalline soft magnetic alloy with a chemical composition contains more than 60 atom% of iron, from 10 to 20 atom% of silicon, from 0.1 to 2 atom% of copper, 5 to 20 atom% of boron, 0.1 to 10 atom% of at least minus one element taken from niobium, titanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum, tungsten and manganese, as well only impurities resulting from processing; the sum of the silicon and boron being less than 30 atom%; the nanocrystalline alloy being obtained by a heat treatment for crystallization of the alloy in an amorphous state.
- a thermal treatment is carried out on the magnetic core magnetic parallel to the axis of the core at a temperature between 250 ° C and 450 ° C, the magnetic field being applied in the form of slots.
- the heat treatment under magnetic field parallel to the axis of the core is carried out at a temperature between 300 ° C and 400 ° C.
- This process applies more particularly to soft magnetic alloys nanocrystalline whose chemical composition contains from 10 to 17 atom% of silicon, from 0.5 to 1.5 atom% of copper, from 5 to 14 atom% of boron and from 2 to 4% at least one element taken from niobium, titanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum, tungsten and manganese.
- the thermal relaxation treatment consists of maintaining at a temperature between 250 ° C and 480 ° C for a time between 0.1 and 10 hours.
- the magnetic core obtained by the process according to the invention can be used advantageously for the manufacture of a differential circuit breaker with its own current class A.
- the sum of the silicon and boron contents should preferably remain less than 30 at% and, better still, remain less than 25 at%.
- the crystallization annealing consists of maintaining at a temperature higher than the start of crystallization temperature and lower than the temperature from the onset of secondary phases which deteriorate the properties magnetic.
- the crystallization annealing temperature is understood between 500 ° C and 600 ° C, but it can be optimized for each ribbon, by example, by determining by tests the temperature which leads to permeability maximum magnetic. The crystallization annealing temperature can then be chosen equal to this temperature.
- the heat treatment carried out under magnetic field is carried out at a temperature between 250 ° C and 450 ° C, and preferably between 300 ° C and 400 ° C.
- the magnetic field is applied in the form of a succession of slots.
- a slot corresponds to a period during which the applied magnetic field is maximum, followed by a period during which it is zero or very weak (less than 10% of the magnetic field reached during treatment).
- the magnetic field applied for a period can be continuous or alternating, in the latter case, the intensity of the magnetic field is peak intensity (maximum intensity reached at each alternation).
- the intensity of magnetic field can be constant during the entire period of application of the field (rectangular slots) or variable. All slots can be from same intensity or on the contrary of variable intensity from one niche to another.
- the heat treatment can end at the end of the field application period magnetic of the last slot; the main thing is that the treatment involves at least two periods during which the applied magnetic field separated by a period during which the magnetic field is not applied.
- the the inventors have in fact found that by doing so, the temperature stability magnetic properties of the magnetic core were very noticeably improved.
- a magnetic core is obtained, the magnetic permeability of impedance ⁇ z measured at 50 Hertz in a magnetic field of maximum excitation of 10 mA / cm (peak value) at 25 ° C is greater than 200,000, and whose magnetic permeability varies by less than 25% over the temperature range between - 25 ° C and + 100 ° C.
- the Br / Bm ratio of the residual induction to the saturation induction is less than 0.2
- ⁇ B stat and ⁇ B dyn are both greater than 0.2 Tesla, the ⁇ B stat / ⁇ B dyn ratio being close to 1.
- Such a magnetic core can be used in a class A differential circuit breaker. Due to its magnetic properties, at equal sensitivity of the circuit breaker, the section of the core can be reduced significantly compared to the section of a core magnetic according to the prior art.
- the other series, B was subjected to a heat treatment of 1 hour at 350 under magnetic field parallel to the axis of the core applied in the form of slots of 5 min under magnetic field separated by periods 15 min without magnetic field.
- the magnitudes ⁇ z , ⁇ B stat and ⁇ B dyn were measured at 25 ° C for an alternating magnetic excitation field at 50 Hertz with a maximum amplitude of 10 mA / cm; the Br / Bm ratio was also measured.
- the results were as follows: series ⁇ (10 mA / cm ° ⁇ B stat (T) ⁇ B dyn (T) ⁇ B stat / ⁇ B dyn Br / Bm To compare. 153,000 0.172 0.169 1,017 0.05 B invention 230,000 0,240 0.234 1.025 0.1
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Soft Magnetic Materials (AREA)
Description
- de 0,1 à 2 at %, et de préférence, de 0,5 à 1,5 at % de cuivre ;
- de 10 à 20 at %, et de préférence, moins de 17 at % de silicium ;
- de 5 à 20 at %, et de préférence, moins de 14 at % de bore ;
- de 0,1 à 10 at % d'au moins un élément pris parmi le niobium, le titane, le zirconium, le hafnium, le vanadium, le tantale, le chrome, le molybdène, le tungstène et le manganèse; de préférence de 2 et 4 at % de niobium .
série | µ (10 mA/cm° | ΔBstat (T) | ΔBdyn (T) | ΔBstat / ΔBdyn | Br/Bm |
A compar. | 153 000 | 0,172 | 0,169 | 1,017 | 0,05 |
B invention | 230 000 | 0,240 | 0,234 | 1,025 | 0,1 |
Claims (7)
- Procédé pour la fabrication d'un noyau magnétique en alliage magnétique doux nanocristallin dont la composition chimique comprend plus de 60 atomes % de fer, de 10 à 20 atomes % de silicium, de 0,1 à 2 atomes % de cuivre, de 5 à 20 atomes % de bore, de 0,1 à 10 atomes % d'au moins un élément pris parmi le niobium, le titane, le zirconium, le hafnium, le vanadium, le tantale, le chrome, le molybdène, le tungstène et le manganèse, ainsi que des impuretés résultant de l'élaboration, la somme des teneurs en silicium et en bore étant inférieure à 30 atomes %, l'alliage nanocristallin étant obtenu par un traitement thermique de cristallisation de l'alliage à l'état amorphe, caractérisé en ce que on effectue sur le noyau magnétique un traitement thermique sous champ magnétique parallèle à l'axe du noyau à une température comprise entre 250 °C et 450 °C, le champ magnétique étant appliqué sous forme de créneaux.
- Procédé selon la revendication 1 caractérisé en ce que le traitement thermique sous champ magnétique parallèle à l'axe du noyau est effectué à une température comprise entre 300 °C et 400 °C.
- Procédé selon la revendication 1 ou la revendication 2 caractérisé en ce que la composition chimique de l'alliage magnétique doux nanocristallin comprend de 10 à 17 atomes % de silicium, de 0,5 à 1,5 atomes % de cuivre, de 5 à 14 atomes % de bore et de 2 à 4 % d'au moins un élément pris parmi le niobium, le titane, le zirconium, le hafnium, le vanadium, le tantale, le chrome, le molybdène, le tungstène et le manganèse.
- Procédé selon l'une quelconque des revendications 1 à 3 caractérisé en ce que, avant d'effectuer le traitement thermique de cristallisation de l'alliage à l'état amorphe, on effectue sur l'alliage à l'état amorphe un traitement thermique de relaxation à une température inférieure à la température de début de cristallisation de l'alliage à l'état amorphe.
- Procédé selon la revendication 4 caractérisé en ce que le traitement thermique de relaxation consiste en un maintien à une température comprise entre 250 °C et 480 °C pendant un temps compris entre 0,1 et 10 heures.
- Noyau magnétique en alliage magnétique doux nanocristallin dont la composition chimique comprend plus de 60 atomes % de fer, de 10 à 20 atomes % de silicium, de 0,1 à 2 atomes % de cuivre, de 5 à 20 atomes % de bore, de 0,1 à 10 atomes % d'au moins un élément pris parmi le niobium, le titane, le zirconium, le hafnium, le vanadium, le tantale, le chrome, le molybdène, le tungstène et le manganèse, ainsi que des impuretés résultant de l'élaboration, la somme des teneurs en silicium et en bore étant inférieure à 30 atomes %, l'alliage nanocristallin pouvant être obtenu par un traitement thermique de cristallisation sous un champ parallèle à l'axe du noyau de l'alliage à l'état amorphe, caractérisé en ce que, pour un champ magnétique d'excitation alternatif à 50 Hertz d'amplitude maximale de 10 mA/cm, à 25 °C, la perméabilité magnétique d'impédance µz est supérieure à 200 000, le rapport Br/Bm de l'induction rémanente Br à l'induction à saturation Bm inférieur à 0,2 et les grandeurs ΔBstat et ΔBdyn sont supérieures à 0,2 Tesla.
- Utilisation d'un noyau magnétique selon la revendication 6 pour la fabrication d'un disjoncteur différentiel à propre courant de la classe A.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9715273 | 1997-12-04 | ||
FR9715273A FR2772181B1 (fr) | 1997-12-04 | 1997-12-04 | Procede de fabrication d'un noyau magnetique en alliage magnetique doux nanocristallin utilisable dans un disjoncteur differentiel de la classe a et noyau magnetique obtenu |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0921541A1 EP0921541A1 (fr) | 1999-06-09 |
EP0921541B1 true EP0921541B1 (fr) | 2004-05-06 |
Family
ID=9514143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98402804A Expired - Lifetime EP0921541B1 (fr) | 1997-12-04 | 1998-11-13 | Procédé de fabrication d'un noyau magnétique doux nanocristallin utilisable dans un disjoncteur différentiel et noyau magnétique obtenu |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0921541B1 (fr) |
AT (1) | ATE266245T1 (fr) |
DE (1) | DE69823621T2 (fr) |
FR (1) | FR2772181B1 (fr) |
PL (1) | PL186806B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19948897A1 (de) * | 1999-10-11 | 2001-04-19 | Vacuumschmelze Gmbh | Schnittstellenmodule für lokale Datennetzwerke |
PL1710812T3 (pl) * | 2005-02-25 | 2008-12-31 | Magnetec Gmbh | Wyłącznik różnicowo prądowy i rdzeń magnetyczny do tego wyłącznika |
US8699190B2 (en) | 2010-11-23 | 2014-04-15 | Vacuumschmelze Gmbh & Co. Kg | Soft magnetic metal strip for electromechanical components |
CN107419200B (zh) * | 2017-06-30 | 2019-11-22 | 江苏理工学院 | 一种含锰的软磁性铁基纳米晶-非晶合金及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4881989A (en) * | 1986-12-15 | 1989-11-21 | Hitachi Metals, Ltd. | Fe-base soft magnetic alloy and method of producing same |
KR910002375B1 (ko) * | 1987-07-14 | 1991-04-20 | 히다찌 긴조꾸 가부시끼가이샤 | 자성코어 및 그 제조방법 |
DE3911480A1 (de) * | 1989-04-08 | 1990-10-11 | Vacuumschmelze Gmbh | Verwendung einer feinkristallinen eisen-basislegierung als magnetwerkstoff fuer fehlerstrom-schutzschalter |
JPH0346205A (ja) * | 1989-07-01 | 1991-02-27 | Jionkoo Kantee Guufun Yousenkonsuu | 交流ないしパルス電流による磁化特性改善方法 |
DE4210748C1 (de) * | 1992-04-01 | 1993-12-16 | Vacuumschmelze Gmbh | Stromwandler für pulsstromsensitive Fehlerstromschutzschalter, Fehlerstromschutzschalter mit einem solchen Stromwandler, und Verfahren zur Wärmebehandlung des Eisenlegierungsbandes für dessen Magnetkern |
FR2733376B1 (fr) * | 1995-04-18 | 1997-06-06 | Schneider Electric Sa | Transformateur d'intensite notamment pour declencheur par courant de defaut sensible aux courants pulses et declencheur equipe d'un tel transformateur |
-
1997
- 1997-12-04 FR FR9715273A patent/FR2772181B1/fr not_active Expired - Fee Related
-
1998
- 1998-11-13 AT AT98402804T patent/ATE266245T1/de not_active IP Right Cessation
- 1998-11-13 EP EP98402804A patent/EP0921541B1/fr not_active Expired - Lifetime
- 1998-11-13 DE DE69823621T patent/DE69823621T2/de not_active Expired - Lifetime
- 1998-12-04 PL PL98330101A patent/PL186806B1/pl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
PL186806B1 (pl) | 2004-02-27 |
PL330101A1 (en) | 1999-06-07 |
FR2772181A1 (fr) | 1999-06-11 |
DE69823621D1 (de) | 2004-06-09 |
ATE266245T1 (de) | 2004-05-15 |
EP0921541A1 (fr) | 1999-06-09 |
FR2772181B1 (fr) | 2000-01-14 |
DE69823621T2 (de) | 2005-05-19 |
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