EP0887105B1 - Dispositif et procédé de fragmentation de matériaux semiconducteur - Google Patents

Dispositif et procédé de fragmentation de matériaux semiconducteur Download PDF

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Publication number
EP0887105B1
EP0887105B1 EP98110151A EP98110151A EP0887105B1 EP 0887105 B1 EP0887105 B1 EP 0887105B1 EP 98110151 A EP98110151 A EP 98110151A EP 98110151 A EP98110151 A EP 98110151A EP 0887105 B1 EP0887105 B1 EP 0887105B1
Authority
EP
European Patent Office
Prior art keywords
semiconductor material
electrodes
silicon
size
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98110151A
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German (de)
English (en)
Other versions
EP0887105A1 (fr
Inventor
Franz Dr. Köppl
Paul Fuchs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
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Wacker Chemie AG
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Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of EP0887105A1 publication Critical patent/EP0887105A1/fr
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/0056—Other disintegrating devices or methods specially adapted for specific materials not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • B02C2019/183—Crushing by discharge of high electrical energy

Definitions

  • the invention relates to an apparatus and a method for Shredding semiconductor material.
  • High purity Silicon is obtained, for example, by thermal decomposition more volatile and therefore simple via distillation processes silicon compounds to be cleaned, such as Trichlorosilane. It falls polycrystalline in the form of rods with typical diameters from 70 to 300 mm and lengths of 500 up to 2500 mm. A large part of the bars becomes production of crucible-drawn single crystals, of ribbons and foils or for the production of polycrystalline solar cell base material used. Because these products are made from high purity, molten Silicon are manufactured, it is necessary to use solid silicon to melt in crucibles.
  • the invention relates to a device for comminuting of semiconductor material, which is characterized in that it has at least two spaced electrodes, which from the same material as the semiconductor material to be shredded exist and each have a heater.
  • electrodes can also be made from semiconductor material use while electrodes made of a different material a substantial entry of foreign material from the electrodes or from that used for contacting Have water.
  • FIG. 1 shows a device for comminuting according to the invention shown schematically in cross section.
  • the device according to the invention is preferably used to brittle hard semiconductor material 1, such as germanium or To crush gallium arsenide and preferably silicon. It it does not matter whether there are fragments or semiconductor rods should be crushed.
  • the electrodes 3 are movably connected so that they can be pushed axially out of the heating cassette 6 with the electric heaters 5 and can thus be pushed onto the semiconductor material to be comminuted, such as preferably a silicon rod, so that they are in contact with the semiconductor material .
  • the electrodes can also be movable by being rigidly connected to the heating device, by moving the electrodes together with the heating device on a displaceable holder 7, which is preferably made of metal.
  • a base 2 which consists of wear-resistant plastic or preferably of the same material as the semiconductor material to be comminuted, preferably silicon, in order to reduce contamination with foreign atoms.
  • the device preferably works under ambient air, at normal pressure, but it can also be operated in an atmosphere with increased dielectric strength, such as under increased pressure or under an electronegative gas such as CO 2 , or a mixture of corresponding gases.
  • Electrodes 3 are arranged so that, for example, a Rod made of semiconductor material can be shredded at once.
  • the electrodes can be placed at intervals of preferably 1 cm to 20 cm depending on the length of the semiconductor material that to be crushed in one operation become.
  • Another object of the invention is a method for comminution of semiconductor material, which is characterized is that the crushing of the semiconductor material by direct Current passage with high voltage pulses takes place as Electrodes made of the same material as the material to be shredded Semiconductor material can be used at a temperature brought in which they are conductive.
  • semiconductor material such as preferably germanium, gallium arsenide and preferred Silicon
  • a base preferably made of plastic or particularly preferably of the same material how the semiconductor material to be shredded is made up of contamination with foreign atoms is reduced.
  • the rod-shaped semiconductor material preferably a silicon rod of 60 mm to 250 mm in diameter and a length of 100 mm to 250 mm, successively the pad at intervals of preferably 1 cm to 20 cm, especially preferably from 3 cm to 8 cm, pushed. This sets up also depends on how large the grain size is during crushing should be. This can be continuously adjusted from 5 mm to 180 mm become.
  • the semiconductor material depending on what grain size is desired is, preferably between 3 cm to 8 cm over at least two electrodes pushed out. Then the two Electrodes 3 moved towards the semiconductor material so that they in Contact with this, taking the two electrodes 3 that are out the same material as the semiconductor material to be shredded exist, and are provided with a heater that a heating cassette 6 and preferably an electric heater 5, which heats the electrodes to a temperature at which they are conductive. This temperature is preferably 400 ° C to 1200 ° C.
  • a high voltage pulse generator 8 emitted at least one surge, preferably a voltage of 20 kV to 300 kV, particularly preferably of 30 kV to 150 kV, a current of kA to 20 kA, especially preferably from 3 kA to 10 kA, a pulse duration of 10 nsec to 50 msec, particularly preferably from 1 msec to 30 msec and one Pulse frequency from 0.1 Hz to 10 Hz, particularly preferably from 0.5 Hz, with a rod diameter of 60 mm.
  • An advantage of the method according to the invention is that it depends on the number of pulses, the level of voltage, the pulse duration and the geometric distance between the contact points large disks up to fine breakage are produced on the semiconductor material can be.
  • a silicon break with one is preferred largest dimension of 100 mm.
  • this is the invention This makes the process cost-effective and extremely environmentally friendly, because there is no waste water.

Landscapes

  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Disintegrating Or Milling (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Claims (4)

  1. Dispositif de fragmentation de matériau semiconducteur, caractérisé en ce qu'il présente au moins deux électrodes espacées qui se composent du même matériau que le matériau semiconducteur à fragmenter et qui présentent chacune un dispositif de chauffage.
  2. Dispositif selon la revendication 1, caractérisé en ce que les électrodes se composent de silicium.
  3. Procédé de fragmentation de matériau semiconducteur, caractérisé en ce que la fragmentation du matériau semiconducteur s'effectue par passage direct de courant avec des impulsions de haute tension, les électrodes utilisées se composant du même matériau que le matériau semiconducteur à fragmenter, lesquelles électrodes sont portées à une température à laquelle elles conduisent le courant.
  4. Procédé selon la revendication 3, caractérisé en ce que l'on utilise du silicium en tant que matériau semiconducteur pour les électrodes.
EP98110151A 1997-06-27 1998-06-04 Dispositif et procédé de fragmentation de matériaux semiconducteur Expired - Lifetime EP0887105B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19727441 1997-06-27
DE19727441A DE19727441A1 (de) 1997-06-27 1997-06-27 Vorrichtung und Verfahren zum Zerkleinern von Halbleitermaterial

Publications (2)

Publication Number Publication Date
EP0887105A1 EP0887105A1 (fr) 1998-12-30
EP0887105B1 true EP0887105B1 (fr) 2001-09-05

Family

ID=7833881

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98110151A Expired - Lifetime EP0887105B1 (fr) 1997-06-27 1998-06-04 Dispositif et procédé de fragmentation de matériaux semiconducteur

Country Status (7)

Country Link
US (1) US6024306A (fr)
EP (1) EP0887105B1 (fr)
JP (1) JP2961694B2 (fr)
KR (1) KR19990006851A (fr)
CN (1) CN1209034A (fr)
DE (2) DE19727441A1 (fr)
TW (1) TW387823B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167786A (ja) * 1997-08-25 1999-03-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE10009569C2 (de) * 2000-02-29 2003-03-27 Schott Glas Verfahren und Vorrichtung zum Zerkleinern von Glaskörpern mittels Mikrowellenerwärmung
DE10062419A1 (de) * 2000-12-14 2002-08-01 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US6874713B2 (en) * 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
DE102004048948A1 (de) * 2004-10-07 2006-04-20 Wacker Chemie Ag Vorrichtung und Verfahren zum kontaminationsarmen, automatischen Brechen von Siliciumbruch
DE102005019873B4 (de) * 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
WO2007019494A2 (fr) * 2005-08-05 2007-02-15 Reveo, Inc. Ruban en si, ruban en sio2, et rubans ultra-purs a base d'autres substances
DE102007061427B4 (de) * 2007-12-20 2009-11-12 Airbus Deutschland Gmbh Vorrichtung zum Zuschneiden und Handhaben eines im Wesentlichen flächenhaften Zuschnittes aus einem CFK-Halbzeug und Verfahren
CN102836765B (zh) * 2012-09-18 2014-12-31 新特能源股份有限公司 一种破碎多晶硅的方法及其装置
WO2015058312A1 (fr) * 2013-10-25 2015-04-30 Selfrag Ag Procédé de fragmentation et/ou de pré-fragilisation de matériau à l'aide de décharges à haute tension
CN106132550B (zh) * 2014-03-26 2020-02-21 泽尔弗拉格股份公司 用于将棒状材料片段化的方法和设备以及设备的应用
CN107160567A (zh) * 2017-07-04 2017-09-15 广东工业大学 一种微细针状石墨电极加工方法
JP6947126B2 (ja) * 2018-06-12 2021-10-13 株式会社Sumco シリコンロッドの破砕方法及び装置並びにシリコン塊の製造方法
JP7074192B2 (ja) * 2018-07-04 2022-05-24 三菱マテリアル株式会社 半導体原料の破砕方法又はクラック発生方法、及び半導体原料塊の製造方法
CN111632994A (zh) * 2020-05-28 2020-09-08 西安交通大学 基于高压脉冲水中放电的废弃太阳能电池板的回收方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU554866B2 (en) * 1982-05-21 1986-09-04 De Beers Industrial Diamond Division (Proprietary) Limited High voltage disintegration
US4653697A (en) * 1985-05-03 1987-03-31 Ceee Corporation Method and apparatus for fragmenting a substance by the discharge of pulsed electrical energy
DE3811091A1 (de) * 1988-03-31 1989-10-12 Heliotronic Gmbh Verfahren zum kontaminationsarmen zerkleinern von massivem stueckigem silicium
SU1741900A1 (ru) * 1990-12-19 1992-06-23 Научно-исследовательский институт высоких напряжений при Томском политехническом институте им.С.М.Кирова Высоковольтный электрод дл электроимпульсного разрушени твердых материалов
DE4218283A1 (de) * 1992-05-27 1993-12-02 Wacker Chemitronic Verfahren zum kontaminationsfreien Zerkleinern von Halbleitermaterial, insbesondere Silicium

Also Published As

Publication number Publication date
US6024306A (en) 2000-02-15
JPH1142635A (ja) 1999-02-16
CN1209034A (zh) 1999-02-24
DE59801370D1 (de) 2001-10-11
DE19727441A1 (de) 1999-01-07
TW387823B (en) 2000-04-21
EP0887105A1 (fr) 1998-12-30
KR19990006851A (ko) 1999-01-25
JP2961694B2 (ja) 1999-10-12

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