EP0784345A3 - Circuit de commutation comprenant des transistors à effet de champ - Google Patents
Circuit de commutation comprenant des transistors à effet de champ Download PDFInfo
- Publication number
- EP0784345A3 EP0784345A3 EP96120817A EP96120817A EP0784345A3 EP 0784345 A3 EP0784345 A3 EP 0784345A3 EP 96120817 A EP96120817 A EP 96120817A EP 96120817 A EP96120817 A EP 96120817A EP 0784345 A3 EP0784345 A3 EP 0784345A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- fet
- switching circuit
- fets
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP342566/95 | 1995-12-28 | ||
JP34256695 | 1995-12-28 | ||
JP34256695A JP3439290B2 (ja) | 1995-12-28 | 1995-12-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0784345A2 EP0784345A2 (fr) | 1997-07-16 |
EP0784345A3 true EP0784345A3 (fr) | 1999-12-29 |
Family
ID=18354758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96120817A Withdrawn EP0784345A3 (fr) | 1995-12-28 | 1996-12-23 | Circuit de commutation comprenant des transistors à effet de champ |
Country Status (4)
Country | Link |
---|---|
US (1) | US5973377A (fr) |
EP (1) | EP0784345A3 (fr) |
JP (1) | JP3439290B2 (fr) |
KR (1) | KR100260329B1 (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002289790A (ja) * | 2001-03-27 | 2002-10-04 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
JP2002353411A (ja) * | 2001-05-25 | 2002-12-06 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
JP2005101565A (ja) * | 2003-08-20 | 2005-04-14 | Matsushita Electric Ind Co Ltd | スイッチ用半導体装置及びスイッチ回路 |
EP1508919A1 (fr) * | 2003-08-22 | 2005-02-23 | Dialog Semiconductor GmbH | Transistors en cascade dans un puits commun |
JP4024762B2 (ja) * | 2004-01-16 | 2007-12-19 | ユーディナデバイス株式会社 | 高周波スイッチ |
US7550781B2 (en) * | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
CN100563106C (zh) * | 2005-01-14 | 2009-11-25 | 优迪那半导体有限公司 | 射频开关 |
USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
JP2009231583A (ja) * | 2008-03-24 | 2009-10-08 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
JP2010074027A (ja) * | 2008-09-22 | 2010-04-02 | Nippon Telegr & Teleph Corp <Ntt> | Fetスイッチ |
JP2010074025A (ja) * | 2008-09-22 | 2010-04-02 | Nippon Telegr & Teleph Corp <Ntt> | 多端子半導体スイッチ |
US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
JP2024082342A (ja) * | 2022-12-08 | 2024-06-20 | 国立大学法人東海国立大学機構 | 電界効果トランジスタ |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6367802A (ja) * | 1986-09-09 | 1988-03-26 | Nec Corp | スイツチ回路 |
EP0292913A2 (fr) * | 1987-05-27 | 1988-11-30 | Sgs-Thomson Microelectronics Gmbh | Dispositif de commutation en circuit intégré |
EP0373803A2 (fr) * | 1988-12-16 | 1990-06-20 | Raytheon Company | Circuits commutateurs en R.F. |
EP0445725A1 (fr) * | 1990-03-07 | 1991-09-11 | Kabushiki Kaisha Toshiba | FET ayant une électrode de grille en forme de U |
EP0480611A2 (fr) * | 1990-10-09 | 1992-04-15 | Mitsubishi Denki Kabushiki Kaisha | Dispositif de transistor à effet de champ pour la commutation d'un signal |
JPH0774185A (ja) * | 1993-08-31 | 1995-03-17 | Japan Energy Corp | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS47464Y1 (fr) * | 1968-08-26 | 1972-01-10 | ||
JPS5360155A (en) * | 1976-11-10 | 1978-05-30 | Fujitsu Ltd | Analog fet switch |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
JPS63238716A (ja) * | 1986-11-14 | 1988-10-04 | Nec Corp | スイッチ回路 |
JP2852051B2 (ja) * | 1988-07-06 | 1999-01-27 | 日本電気アイシーマイコンシステム株式会社 | 相補型クロックドナンド回路 |
JPH0717247B2 (ja) * | 1989-10-03 | 1995-03-01 | 三井造船株式会社 | オーダピッキングシステム |
JPH04214665A (ja) * | 1990-12-12 | 1992-08-05 | Sharp Corp | 定電流源回路及び定電流源回路素子 |
US5217915A (en) * | 1991-04-08 | 1993-06-08 | Texas Instruments Incorporated | Method of making gate array base cell |
US5367187A (en) * | 1992-12-22 | 1994-11-22 | Quality Semiconductor, Inc. | Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions |
JPH07326952A (ja) * | 1994-06-02 | 1995-12-12 | Fujitsu Ltd | Fetスイッチ |
JP2747223B2 (ja) * | 1994-06-27 | 1998-05-06 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路 |
JPH08148537A (ja) * | 1994-11-18 | 1996-06-07 | Toshiba Corp | 半導体集積回路 |
-
1995
- 1995-12-28 JP JP34256695A patent/JP3439290B2/ja not_active Expired - Lifetime
-
1996
- 1996-12-23 EP EP96120817A patent/EP0784345A3/fr not_active Withdrawn
- 1996-12-27 US US08/777,348 patent/US5973377A/en not_active Expired - Lifetime
- 1996-12-27 KR KR1019960074059A patent/KR100260329B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6367802A (ja) * | 1986-09-09 | 1988-03-26 | Nec Corp | スイツチ回路 |
EP0292913A2 (fr) * | 1987-05-27 | 1988-11-30 | Sgs-Thomson Microelectronics Gmbh | Dispositif de commutation en circuit intégré |
EP0373803A2 (fr) * | 1988-12-16 | 1990-06-20 | Raytheon Company | Circuits commutateurs en R.F. |
EP0445725A1 (fr) * | 1990-03-07 | 1991-09-11 | Kabushiki Kaisha Toshiba | FET ayant une électrode de grille en forme de U |
EP0480611A2 (fr) * | 1990-10-09 | 1992-04-15 | Mitsubishi Denki Kabushiki Kaisha | Dispositif de transistor à effet de champ pour la commutation d'un signal |
JPH0774185A (ja) * | 1993-08-31 | 1995-03-17 | Japan Energy Corp | 半導体装置 |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 012, no. 291 (E - 644) 9 August 1988 (1988-08-09) * |
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 06 31 July 1995 (1995-07-31) * |
Also Published As
Publication number | Publication date |
---|---|
US5973377A (en) | 1999-10-26 |
EP0784345A2 (fr) | 1997-07-16 |
KR970054536A (ko) | 1997-07-31 |
KR100260329B1 (ko) | 2000-07-01 |
JP3439290B2 (ja) | 2003-08-25 |
JPH09186501A (ja) | 1997-07-15 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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AK | Designated contracting states |
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PUAL | Search report despatched |
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RIC1 | Information provided on ipc code assigned before grant |
Free format text: 6H 01L 27/088 A, 6H 01L 27/06 B, 6H 01L 27/085 B |
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17P | Request for examination filed |
Effective date: 20000406 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20031119 |