EP0732605A2 - Appareil d'exposition - Google Patents

Appareil d'exposition Download PDF

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Publication number
EP0732605A2
EP0732605A2 EP95111070A EP95111070A EP0732605A2 EP 0732605 A2 EP0732605 A2 EP 0732605A2 EP 95111070 A EP95111070 A EP 95111070A EP 95111070 A EP95111070 A EP 95111070A EP 0732605 A2 EP0732605 A2 EP 0732605A2
Authority
EP
European Patent Office
Prior art keywords
lens
lens group
optical system
refracting power
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95111070A
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German (de)
English (en)
Other versions
EP0732605A3 (fr
Inventor
Hitoshi Matsuzawa
Koji Shigematsu
Kazumasa Endo
Yutaka Suenaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Priority to EP03003589A priority Critical patent/EP1310818A3/fr
Publication of EP0732605A2 publication Critical patent/EP0732605A2/fr
Publication of EP0732605A3 publication Critical patent/EP0732605A3/fr
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems

Definitions

  • the present invention relates to an exposure apparatus having a projection optical system for projecting a pattern of a first object onto a photosensitive substrate etc. as a second object, and more particularly to a projection optical system suitably applicable to projection exposure of a pattern for semiconductor or liquid crystal formed on a reticle (mask) as the first object onto the substrate (semiconductor wafer, plate, etc.) as the second object.
  • a projection optical system suitably applicable to projection exposure of a pattern for semiconductor or liquid crystal formed on a reticle (mask) as the first object onto the substrate (semiconductor wafer, plate, etc.) as the second object.
  • the resolving power required for the exposure apparatus used in printing of wafer also becomes higher and higher.
  • the projection optical systems of the exposure apparatus are required to decrease image stress.
  • the image stress includes those due to bowing etc. of the printed wafer on the image side of projection optical system and those due to bowing etc. of the reticle with circuit pattern etc. written therein, on the object side of projection optical system, as well as distortion caused by the projection optical system.
  • the conventional technology has employed the so-called image-side telecentric optical system that located the exit pupil position at a farther point on the image side of projection optical system.
  • the image stress due to the bowing of reticle can also be reduced by employing a so-called object-side telecentric optical system that locates the entrance pupil position of projection optical system at a farther point from the object plane, and there are suggestions to locate the entrance pupil position of projection optical system at a relatively far position from the object plane as described. Examples of those suggestions are described for example in Japanese Laid-open Patent Applications No. 63-118115 and No. 5-173065 and U.S Patent No.5,260,832.
  • An object of the present invention is to provide a high-performance projection optical system having a relatively large numerical aperture and achieving the bitelecentricity and good correction of aberrations, particularly distortion, in a very wide exposure area (exposure field).
  • the projection optical system can be applied to an exposure apparatus.
  • the present invention involves an exposure apparatus having a high-performance projection optical system comprising at least a first stage (wafer stage) allowing a photosensitive substrate (for example, a semiconductor wafer coated with a photosensitive material such as a photoresist) to be held on a main surface thereof, an illumination optical system having a light source for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern on a mask onto the substrate, and a projecting optical system for projecting an image on the mask, on the substrate surface.
  • the exposure apparatus further comprises a second stage (reticle stage) for supporting the mask at a predetermined position.
  • the above projecting optical system is provided between the first stage and the second stage and projects an image of a first object (for example, a mask with a pattern such as an integrated circuit) onto a second object (for example, a photosensitive substrate).
  • the projection optical system comprises a first lens group G 1 with positive refracting power, a second lens group G 2 with negative refracting power, a third lens group G 3 with positive refracting power, a fourth lens group G 4 with negative refracting power, and a fifth lens group G 5 with positive refracting power in the named order from the side of the first object R.
  • a magnification of the projection optical system is 1/2.5 so as to obtain a wider exposure field.
  • the first lens group G 1 with the positive refracting power contributes to correction of distortion while maintaining the telecentricity. Specifically, the first lens group G 1 generates positive distortion to correct in a good balance for negative distortion generated by a plurality of lens groups located on the second object side of the first lens group G 1 .
  • the second lens group G 2 with the negative refracting power and the fourth lens group G 4 with the negative refracting power contribute mainly to correction of Petzval sum to flatten the image surface.
  • the second lens group G 2 with the negative refracting power and the third lens group G 3 with the positive refracting power compose an inverted telephoto system in combination and contribute to securing the back focus (a distance from an optical surface such as a lens surface closest to the second object W in the projection optical system to the second object W) of the projection optical system.
  • the fifth lens group G 5 with the positive refracting power contributes mainly to suppressing appearance of distortion, and suppressing appearance of spherical aberration in particular as much as possible in order to fully meet a demand to achieve a high numerical aperture on the second object side.
  • f 1 is a focal length of the first lens group G 1
  • f 2 is a focal length of the second lens group G 2
  • f 3 is a focal length of the third lens group G 3
  • f 4 is a focal length of the fourth lens group G 4
  • f 5 is a focal length of the fifth lens group G 5
  • f 1-3 is a composite focal length of the first lens group G 1 to third lens group G 3
  • f 4-5 is a composite focal length of the fourth lens group G 4 and the fifth lens group G 5
  • L is a distance from the first object R to the second object W
  • the condition (1) defines an optimum ratio between the focal length f 1 of the first lens group G 1 with positive refracting power and the focal length f 3 of the third lens group G 3 with positive refracting power, which is an optimum refracting power (power) balance between the first lens group G 1 and the third lens group G 3 .
  • This condition (1) is mainly for correcting the distortion in a good balance. Below the lower limit of this condition (1) a large negative distortion is produced because the refracting power of the third lens group G 3 becomes relatively weak to the refracting power of the first lens group G 1 . Above the upper limit of the condition (1) a large negative distortion is produced because the refracting power of the first lens group G 1 becomes relatively weak to the refracting power of the third lens group G 3 .
  • the condition (2) defines an optimum ratio between the focal length f 2 of the second lens group G 2 with negative refracting power and the focal length f 4 of the fourth lens group G 4 with negative refracting power, which is an optimum refracting power (power) balance between the second lens group G 2 and the fourth lens group G 4 .
  • This condition (2) is mainly for keeping the Petzval sum small so as to correct the curvature of field well while securing a wide exposure field. Below the lower limit of the condition (2), a large positive Petzval sum appears because the refracting power of the fourth lens group G 4 becomes relatively weak to the refracting power of the second lens group G 2 .
  • the lower limit of the above condition (2) is preferably set to 0.8, i.e., 0.8 ⁇ f 2 /f 4 .
  • the condition (3) defines an optimum ratio between the focal length f 5 of the fifth lens group G 5 with positive refracting power and the distance (object-image distance) L from the first object R (reticle etc.) and the second object W (wafer etc.).
  • This condition (3) is for correcting the spherical aberration, distortion, and Petzval sum in a good balance while keeping a large numerical aperture.
  • the refracting power of the fifth lens group G 5 is too strong, so that this fifth lens group G 5 generates not only a negative distortion but also a great negative spherical aberration.
  • the condition (4) defines an optimum ratio of the composite focal length f 1-3 of the first positive lens group G 1 , the second negative lens group G 2 , and the third positive lens G 3 to the composite focal length f 4-5 of the fourth negative lens group G 4 and the fifth positive lens group G 5 to achieve a sufficiently wide exposure area and to effect sufficient correction for distortion.
  • the lower limit of the above condition (4) is preferably set to 1.5, as 1.5 ⁇ f 1-3 /f 4-5 .
  • the upper limit of the above condition (4) is preferably set to 2.2, as f 1-3 /f 4-5 ⁇ 2.2 .
  • the condition (5) defines an optimum ratio between the axial distance I from the first object R to the first-object-side focal point F of the entire projection optical system and the distance (object-image distance) L from the first object R (reticle etc.) to the second object W (wafer etc.).
  • the first-object-side focal point F of the entire projection optical system means an intersecting point of outgoing light from the projection optical system with the optical axis after collimated light beams are let to enter the projection optical system on the second object side in the paraxial region with respect to the optical axis of the projection optical system and when the light beams in the paraxial region are outgoing from the projection optical system.
  • the lower limit of this condition (5) is preferably set to 1.7, i.e., 1.7 ⁇ I/L.
  • the upper limit of the above condition (5) is preferably set to 6.8, i.e., I/L ⁇ 6.8.
  • the second lens group G 2 comprise a front lens L 2F with a negative refracting power disposed as closest to the first object R and shaped with a concave surface to the second object W, a rear lens L 2R of a meniscus shape with a negative refracting power disposed as closest to the second object W and shaped with a concave surface to the first object R, and an intermediate lens group G 2M disposed between the front lens L 2F in the second lens group G 2 and the rear lens L 2R in the second lens group G 2 , and that the intermediate lens group G 2M comprise at least a first lens L M1 with a positive refracting power, a second lens L M2 with a negative refracting power, and a third lens L M3 with a negative refracting power in order from the side of the first object R.
  • the front lens L 2F with the negative refracting power disposed as closest to the first object R and shaped with the concave surface to the second object W contributes to correction for curvature of field and coma
  • the rear lens L 2R of the meniscus shape with the negative refracting power disposed as closest to the second object W in the second lens group G 2 and shaped with the concave surface to the first object R contributes mainly to correction for coma.
  • the rear lens L 2R also contributes to correction for curvature of field.
  • the first lens L M1 with the positive refracting power contributes to correction for negative distortion generated by the second and third lenses L M2 , L M3 with the negative refracting powers greatly contributing to correction for curvature of field.
  • appearance of coma can be suppressed because there are two or more lenses of negative refracting powers placed on the second object side of the first lens L M1 with the positive refracting power.
  • f n is a composite focal length of from the second lens to the third lens in the second lens group G 2 and L is the distance from the first object R to the second object W, the following condition be satisfied: -1.4 ⁇ f n /L ⁇ -0.123.
  • the condition (6) defines an appropriate ratio of the composite focal length f n of from the second lens L M2 with the negative refracting power to the third lens L M3 with the negative refracting power in the intermediate lens group G 2M in the second lens group G 2 to the distance (object-to-image distance) L from the first object R to the second object W.
  • the composite focal length f n of from the second lens L M2 with the negative refracting power to the third lens L M3 with the negative refracting power in the intermediate lens group G 2M in the second lens group G 2 does not mean only the composite focal length of the two lenses, the second lens L M2 and the third lens L M3 , but also means a composite focal length of two or more lenses of from the second lens L M2 to the third lens L M3 in the cases where a plurality of lenses are present between the second lens L M2 and the third lens L M3 .
  • This condition (6) is for keeping the Petzval sum small as suppressing appearance of negative distortion.
  • the refracting power becomes too weak of the negative sub-lens group including at least two negative lenses of from the second negative lens L M2 to the third negative lens L M3 in the intermediate lens group G 2M in the second lens group G 2 , which will result in giving rise to large positive Petzval sum and weakening the refracting power of the third lens group G 3 , thus making it difficult to design the projection optical system in compact structure.
  • the lower limit of the above condition (6) is preferably set to -0.150, as -0.150 ⁇ f n /L .
  • the composite refracting power becomes too strong of the sub-lens group including at least two negative lenses of from the second negative lens L M2 to the third negative lens L M3 in the intermediate lens group G 2M in the second lens group G 2 , which makes it difficult to well correct negative distortion across a wide exposure area.
  • the upper limit of the above condition (6) is preferably set to -0.129, as f n /L ⁇ -0.129.
  • the fifth lens group G 5 preferably comprises a negative lens L 54 of a biconcave shape, a first positive lens L 53 disposed as adjacent to the negative lens L 54 of the biconcave shape on the first object side and shaped with a convex surface to the second object W, and a second positive lens L 55 disposed as adjacent to the negative lens of the biconcave shape on the second object side and shaped with a convex surface to the first object R.
  • r 5p1 is a radius of curvature of the convex surface of the first positive lens L 53 in the fifth lens group G 5 and r 5n1 is a radius of curvature of a concave surface on the first object side, of the negative lens L 54 of the biconcave shape in the fifth lens group G 5 , the following condition be satisfied: 0 ⁇ (r 5p1 - r 5n1 )/(r 5p1 + r 5n1 ) ⁇ 1.
  • r 5n2 is a radius of curvature of a concave surface on the second object side
  • r 5p2 is a radius of curvature of the convex surface of the second positive lens L 55 in the fifth lens group G 5
  • the following condition be satisfied: 0 ⁇ (r 5p2 - r 5n2 )/(r 5p2 + r 5n2 ) ⁇ 1.
  • condition (7) and condition (8) define appropriate shapes of gas lenses formed on the both sides of the negative lens L 54 of the biconcave shape in the fifth lens group G 5 so as to effect good correction for third-order spherical aberration.
  • condition (7) or condition (8) correction for third-order spherical aberration becomes insufficient; in contrast, above the upper limit of condition (7) or condition (8), the third-order spherical aberration becomes overcorrected, resulting in unpreferable correction in either case.
  • the lower limit of the condition (7) is more preferably set to 0.01, as 0.01 ⁇ (r 5p1 - r 5n1 )/(r 5p1 + r 5n1 )
  • the upper limit of condition (7) is more preferably set to 0.7, as (r 5p1 - r 5n1 )/(r 5p1 + r 5n1 ) ⁇ 0.7 .
  • the lower limit of the condition (8) is more preferably set to 0.01, as 0.01 ⁇ (r 5p2 - r 5n2 )/(r 5p2 + r 5n2 )
  • the upper limit of the condition (8) is more preferably set to 0.7, as (r 5p2 - r 5n2 )/(r 5p2 + r 5n2 ) ⁇ 0.7 .
  • the negative lens L 54 of the biconcave shape, the first positive lens L 53 disposed as adjacent on the first object side to the negative lens L 54 of the biconcave shape and shaped with the convex surface to the second object W, and the second positive lens L 55 disposed as adjacent on the second object side to the negative lens L 54 of the biconcave shape and shaped with the convex surface to the first object R be disposed between at least one positive lens, for example lens L 52 , in the fifth lens group G 5 and at least one positive lens, for example lens L 56 , in the fifth lens G 5 .
  • This constitution can suppress appearance of higher-order spherical aberration, which tends to appear as the numerical aperture increases. As a result, a concave lens will not be necessary at a space S2 between the lens L 56 and the lens L 57 .
  • f 3 is the focal length of the third lens group G 3 and f 5 is the focal length of the fifth lens group G 5 , the following condition be satisfied: 0.80 ⁇ f 3 /f 5 ⁇ 1.00.
  • the above condition (9) defines a preferred ratio of refracting powers of the third lens group G 3 and the fifth lens group G 5 .
  • an arrangement of nearly equal refracting powers of the third lens group G 3 and the fifth lens group G 5 can suppress appearance of asymmetric aberration (particularly, coma and distortion); and the arrangement that the refracting power of the fifth lens group G 5 is slightly weaker than that of the third lens group G 3 , as in the condition (9), can suppress appearance of negative distortion in particular.
  • the fourth lens group G 4 comprise a front lens L 41 with a negative refracting power disposed as closest to the first object R and shaped with a concave surface to the second object W, a rear lens L 43 with a negative refracting power disposed as closest to the second object W and shaped with a concave surface to the first object R, and at least one negative lens L 42 disposed between the front lens L 41 in the fourth lens group G 4 and the rear lens L 43 in the fourth lens group G 4 .
  • the Petzval sum and spherical aberration can be well corrected by the arrangement in which one or more negative lenses are disposed between the front lens L 41 and the rear lens L 43 in the fourth lens group G 4 .
  • r 4F is a radius of curvature of a second-object-side surface of the front lens L 41 disposed as closest to the first object R in the fourth lens group G 4 and r 4R1 a radius of curvature of a first-object-side surface of the rear lens L 43 disposed as closest to the second object W in the fourth lens G 4 , the following condition be satisfied: 1.03 ⁇
  • the lower limit of condition (10) is preferably set to 1.10, as 1.10 ⁇
  • D is an axial distance from a second-object-side lens surface of the third lens L M3 with the negative refracting power in the intermediate lens group G 2M in the second lens group G 2 to a first-object-side lens surface of the rear lens L 2R in the second lens group G 2 and L is the distance from the first object R to the second object W, the following condition be satisfied: 0.05 ⁇ D/L ⁇ 0.4.
  • f 4 is the focal length of the fourth lens group G 4 and L is the distance from the first object R to the second object W, the following condition be satisfied: -0.098 ⁇ f 4 /L ⁇ -0.005.
  • the lower limit of condition (12) is preferably set to -0.078, as -0.078 ⁇ f 4 /L
  • the upper limit of condition (12) is preferably set to -0.047, as f 4 /L ⁇ -0.047 .
  • f 2 is the focal length of the second lens group G 2 and L is the distance from the first object R to the second object W, the following condition be satisfied: -0.8 ⁇ f 2 /L ⁇ -0.050.
  • the lower limit of condition (13) is preferably set to -0.16, as -0.16 ⁇ f 2 /L .
  • the fourth lens group G 4 comprise a front lens L 41 with a negative refracting power disposed as closest to the first object R and shaped with a concave surface to the second object W, a rear lens L 43 with a negative refracting power disposed as closest to the second object W and shaped with a concave surface to the first object R, and at least one negative lens L 42 disposed between the front lens L 41 in the fourth lens group G 4 and the rear lens L 43 in the fourth lens group G 4 , and that when r 4R1 is a radius of curvature of a first-object-side surface of the rear lens L 43 disposed as closest to the second object W in the fourth lens group G 4 and r 4R2 is a radius of curvature of a second-object-side surface of the rear lens L 43 , the following condition be satisfied: -1.00 ⁇ (r 4R1 - r 4R2 )/(r 4R1 + r 4R2 ) ⁇ 0.
  • the negative, rear lens L 43 located as closest to the second object W in the fourth lens group G 4 becomes of a biconcave shape to generate higher-order spherical aberration; in contrast, above the upper limit of condition (14), the negative, rear lens L 43 located as closest to the second object W in the fourth lens group G 4 will have a positive refracting power, so that correction of Petzval sum tends to become difficult.
  • the first lens L M1 with the positive refracting power in the intermediate lens group G 2M in the second lens group G 2 have a lens shape with a convex surface to the second object W and that when ⁇ 21 is a refracting power of the second-object-side lens surface of the first lens L M1 with the positive refracting power in the intermediate lens group G 2M in the second lens group G 2 and L is the distance from the first object R to the second object W, the following condition be satisfied: 0.54 ⁇ 1/( ⁇ 21 ⁇ L) ⁇ 10.
  • the refracting power of the second-object-side lens surface, stated herein, of the first lens L M1 with positive refracting power in the intermediate lens group G 2M is given by the following formula when a refractive index of a medium for the first lens L M1 is n 1 , a refracting index of a medium in contact with the second-object-side lens surface of the first lens L M1 is n 2 , and a radius of curvature of the second-object-side lens surface of the first lens L M1 is r 21 .
  • ⁇ 21 (n 2 - n 1 )/r 21
  • the first lens group G 1 needs to more overcorrect distortion, which will generate spherical aberration of pupil, thus not preferred.
  • f 2F is a focal length of the front lens L 2F with the negative refracting power disposed as closest to the first object R in the second lens group G 2 and shaped with the concave surface to the second object W
  • f 2R is a focal length of the rear lens L 2R with the negative refracting power disposed as closest to the second object W in the second lens group G 2 and shaped with the concave surface to the first object R
  • the condition (16) defines an optimum ratio between the focal length f 2R of the rear lens L 2RF in the second lens group G 2 and the focal length f 2F of the front lens L 2F in the second lens group G 2 .
  • the balance of the refracting power of the first lens group G 1 or the third lens group G 3 is destroyed, it becomes difficult to well correct distortion or to simultaneously well correct Petzval sum and astigmatism.
  • the intermediate lens group G 2M in the second lens group G 2 preferably has a negative refracting power.
  • the second lens L M2 and the third lens L M3 have negative refracting powers in the intermediate lens group G 2M . It is preferred that when f 22 is the focal length of the second lens L M2 with the negative refracting power in the second lens group G 2 and f 23 the focal length of the third lens L M3 with the negative refracting power in the second lens group G 2 , the following condition (17) be satisfied: 0.7 ⁇ f 22 /f 23 .
  • the refracting power of the second negative lens L M2 becomes relatively stronger than the refracting power of the third negative lens L M3 , and the second negative lens L M2 generates large coma and negative distortion.
  • the lower limit of the above condition (17) is preferably set to 1.6, as 1.6 ⁇ f 22 /f 23 .
  • the upper limit of the above condition (17) is preferably set to 18, as f 22 /f 23 ⁇ 18.
  • the first lens group G 1 for the first lens group G 1 to have a function to suppress appearance of higher-order distortion and appearance of spherical aberration of pupil, the first lens group G 1 preferably has at least two positive lenses; for the second lens group G 2 to suppress appearance of coma while correcting Petzval sum, the second lens group G 2 preferably has at least two negative lenses.
  • the third lens group G 3 for the third lens group G 3 to have a function to suppress degradation of spherical aberration and Petzval sum, the third lens group G 3 preferably has at least three positive lenses; further, for the fourth lens group G 4 to have a function to suppress appearance of coma as correcting Petzval sum, the fourth lens group G 4 preferably has at least three negative lenses.
  • the fifth lens group G 5 For the fifth lens group G 5 to have a function to suppress appearance of negative distortion and spherical aberration, the fifth lens group G 5 preferably has at least five positive lenses. Further, for the fifth lens group G 5 to have a function to correct spherical aberration, the fifth lens group G 5 preferably has at least one negative lens.
  • Fig. 1 is drawing to show parameters defined in embodiments of the present invention.
  • Fig. 2 is a drawing to show schematic structure of an exposure apparatus to which the projection optical system according to the present invention is applied.
  • Fig. 3 is a lens arrangement drawing of the projection optical system in the first embodiment according to the present invention.
  • Fig. 4 is a lens arrangement drawing of the projection optical system in the second embodiment according to the present invention.
  • Fig. 5 is a lens arrangement drawing of the projection optical system in the third embodiment according to the present invention.
  • Fig. 6 is a lens arrangement drawing of the projection optical system in the fourth embodiment according to the present invention.
  • Fig. 7 is aberration diagrams to show aberrations in the projection optical system of the first embodiment as shown in Fig. 3.
  • Fig. 8 is aberration diagrams to show aberrations in the projection optical system of the second embodiment as shown in Fig. 4.
  • Fig. 9 is aberration diagrams to show aberrations in the projection optical system of the third embodiment as shown in Fig. 5.
  • Fig. 10 is aberration diagrams to show aberrations in the projection optical system of the fourth embodiment as shown in Fig. 6.
  • Fig. 2 shows a basic structure of the exposure apparatus according to the present invention. As shown in Fig.
  • an exposure apparatus of the present invention comprises at least a wafer stage 3 allowing a photosensitive substrate W to be held on a main surface 3a thereof, an illumination optical system 1 for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask (reticle R) onto the substrate W, a light source 100 for supplying an exposure light to the illumination optical system 1, a projection optical system 5 provided between a first surface P1 (object plane) on which the mask R is disposed and a second surface P2 (image plane) to which a surface of the substrate W is corresponded, for projecting an image of the pattern of the mask R onto the substrate W.
  • the illumination optical system 1 includes an alignment optical system 110 for adjusting a relative positions between the mask R and the wafer W, and the mask R is disposed on a reticle stage 2 which is movable in parallel with respect to the main surface of the wafer stage 3.
  • a reticle exchange system 200 conveys and changes a reticle (mask R) to be set on the reticle stage 2.
  • the reticle exchange system 200 includes a stage driver for moving the reticle stage 2 in parallel with respect to the main surface 3a of the wafer stage 3.
  • the projection optical system 5 has a space permitting an aperture stop 6 (AS) to be set therein.
  • the sensitive substrate W comprises a wafer 8 such as a silicon wafer or a glass plate, etc., and a photosensitive material 7 such as a photoresist or the like coating a surface of the wafer 8.
  • the wafer stage 3 is moved in parallel with respect to a object plane P1 by a stage control system 300. Further, since a main control section 400 such as a computer system controls the light source 100, the reticle exchange system 200, the stage control system 300 or the like, the exposure apparatus can perform a harmonious action as a whole.
  • the reference of United States Patent No. 4,497,015 teaches an illumination optical system (using a lamp source) applied to a scan type exposure apparatus.
  • the reference of United States Patent No. 4,666,273 teaches a step-and repeat type exposure apparatus capable of using the projection optical system of the present invention.
  • the reference of United States Patent No. 5,194,893 teaches an illumination optical system, an illumination region, mask-side and reticle-side interferometers, a focusing optical system, alignment optical system, or the like.
  • the reference of United States Patent No. 5,253,110 teaches an illumination optical system (using a laser source) applied to a step-and-repeat type exposure apparatus.
  • the '110 reference can be applied to a scan type exposure apparatus.
  • the reference of United States Patent No. 5,333,035 teaches an application of an illumination optical system applied to an exposure apparatus.
  • the reference of United States Patent No. 5,365,051 teaches a auto-focusing system applied to an exposure apparatus.
  • the reference of United States Patent No. 5,379,091 teaches an illumination optical system (using a laser source) applied to a scan type exposure apparatus.
  • the illumination optical system 1 illuminates the reticle R to form an image of the light source 100 at the pupil position of the projection optical system 5 (the position of aperture stop AS 6). Namely, the illumination optical system 1 uniformly illuminates the reticle R under Köhler illumination. Then the pattern image of reticle R illuminated under Köhler illumination is projected (or transferred) onto the wafer W.
  • the present embodiment shows an example of the projection optical system in which the light source disposed inside the illumination optical system 1 is a mercury lamp for supplying the i-line (365 nm).
  • the structure of the projection optical system in each embodiment will be described by reference to Fig. 3 to Fig. 6.
  • Fig. 3 to Fig. 6 are lens structural drawings of the projection optical systems in the first to fourth embodiments, respectively, according to the present invention.
  • the projection optical system in each embodiment has a first lens group G 1 with a positive refracting power, a second lens group G 2 with a negative refracting power, a third lens group G 3 with a positive refracting power, a fourth lens group G 4 with a negative refracting power, and a fifth lens group G 5 with a positive refracting power in order from the side of reticle R as a first object, is arranged as substantially telecentric on the object side (reticle R side) and on the image side (wafer W side), and has a reduction magnification.
  • an object-to-image distance (a distance along the optical axis from the object plane to the image plane, or a distance along the optical axis from the reticle R to wafer W) L is 1000, an image-side numerical aperture NA is 0.3, a projection magnification ⁇ is 1/2.5, and a diameter of an exposure area on the wafer W is 51.9.
  • the first lens group G 1 has a positive lens (positive lens of a biconvex shape) L 11 with a convex surface to the image, a negative lens of a biconcave shape L 12 , a positive lens (positive lens of a biconvex shape) L 13 with a convex surface to the object, and a positive lens of a biconvex shape L 14 in order from the object side.
  • the image means a pattern image which is projected onto the image plane P2 when exposure light from the illumination optical system 1 passes through the reticle R, and object means a pattern on the object plane P1 of the reticle R.
  • the second lens group G 2 has a negative lens (negative meniscus lens: front lens) L 2F disposed as closest to the object and shaped with a concave surface to the image, a negative meniscus lens (rear lens) L 2R disposed as closest to the image and shaped with a concave surface to the object, and an intermediate lens group G 2M with a negative refracting power disposed between these negative lens L 2F and negative lens L 2R .
  • a negative lens negative meniscus lens: front lens
  • L 2R negative meniscus lens
  • an intermediate lens group G 2M with a negative refracting power disposed between these negative lens L 2F and negative lens L 2R .
  • This intermediate lens group G 2M has a positive lens (positive lens of a biconvex shape: first lens) L M1 shaped with a convex surface to the object, a negative meniscus lens (second lens) L M2 shaped with a concave surface to the image, and a negative lens (negative lens of a biconcave shape: third lens) L M3 shaped with a concave surface to the image in order from the object side.
  • the third lens group G 3 has two positive lenses (positive meniscus lenses) L 31 , L 32 each shaped with a convex surface to the image, a positive lens (positive lens of a biconvex shape) L 33 shaped with a convex surface to the image, a positive lens (positive lens of a biconvex shape) L 34 shaped with a convex surface to the object, and two positive lenses (positive meniscus lenses) L 35 , L 36 each shaped with a convex surface to the object in order from the object side.
  • the fourth lens group G 4 has a negative lens (negative lens of a biconcave shape: front lens) L 41 disposed as closest to the object and shaped with a concave surface to the image, a negative lens (negative meniscus lens: rear lens) L 43 disposed as closest to the image and shaped with a concave surface to the object, and a negative lens L 42 of a biconcave shape disposed between these front lens L 41 and rear lens L 43 .
  • the fifth lens group G 5 has two positive lenses (positive meniscus lenses) L 50 , L 51 each shaped with a convex surface to the image, a positive lens (positive lens of a biconvex shape) L 52 shaped with a convex surface to the image, a positive lens (positive lens of a biconvex shape: first positive lens) L 53 shaped with a convex surface to the image, a negative lens L 54 of a biconcave shape, a positive lens (positive meniscus lens: second positive lens) L 55 shaped with a convex surface to the object, a positive lens (positive lens of a biconvex shape) L 56 shaped with a convex surface to the object, a positive lens (positive lens of a biconvex shape) L 57 shaped with a convex surface to the image, a negative lens L 58 of a biconcave shape, and a positive lens (positive meniscus lens) L 59 shaped with a convex surface to the object.
  • an aperture stop AS is disposed between the image-side concave surface of the front lens L 41 and the object-side concave surface of the rear lens L 43 in the fourth lens group G 4 .
  • the image-side convex surface of the positive biconvex lens L 11 and the object-side concave surface of the negative biconcave lens L 12 have nearly equal curvatures and are arranged as relatively close to each other. Further, in the first lens group G 1 , the image-side concave surface of the negative biconcave lens L 12 and the object-side convex surface of the positive biconvex lens L 13 have nearly equal curvatures and are arranged as relatively close to each other. In the present embodiment, each set of these lens surfaces arranged as close to each other are corrected for higher-order distortion.
  • the front lens L 2F in the second lens group G 2 is formed in a meniscus shape and shaped with a concave surface to the image, coma can be reduced. Since in the present embodiment the first lens L M1 with the positive refracting power in the intermediate lens group G 2M in the second lens group G 2 is formed in a biconvex shape and shaped with a convex surface to the image and another convex surface to the object, appearance of spherical aberration of pupil can be suppressed.
  • the fourth lens group G 4 in the present embodiment is so arranged that the negative lens (front lens) L 41 shaped with the concave surface to the image is disposed on the object side of the aperture stop AS and the negative lens (rear lens) L 43 with the concave surface to the object is disposed on the image side of the aperture stop AS, appearance of asymmetric aberration, particularly coma, can be suppressed.
  • the lens groups of from the third lens group G 3 to the fifth lens group G 5 have a nearly symmetric refractive-power arrangement with respect to the aperture stop AS located in the fourth lens group, appearance of asymmetric aberration, particularly coma and distortion, can be suppressed.
  • the first positive lens L 53 in the fifth lens group G 5 has the convex surface opposed to the negative lens L 54 of the biconcave shape and the other lens surface on the opposite side to the negative lens L 54 is also a convex surface, higher-order spherical aberration can be prevented from arising with an increase of numerical aperture.
  • spherical aberration and astigmatism is corrected by arranging the positive lens L 57 with the convex surface to the image, the negative lens of the biconcave shape L 58 , and the positive lens L 59 with the convex surface to the object near the image plane.
  • the lens arrangement of the second embodiment shown in Fig. 4 is similar to that of the first embodiment as shown in Fig. 3 and described above.
  • the third lens group in the second embodiment is different from that in the first embodiment in that the third lens group G 3 is composed of three positive lenses (positive meniscus lenses) L 31 , L 32 , L 33 each shaped with a convey surface to the image, a positive lens (positive lens of a biconvex shape) L 34 shaped with a convex surface to the object, and two positive lenses (positive meniscus lenses) L 35 , L 36 each shaped with a convex surface to the object in order from the object side, but the function thereof is the same as that of the first embodiment as described above.
  • the fourth lens group in the second embodiment is different from that of the first embodiment in that the fourth lens group G 4 has a negative lens (negative meniscus lens: front lens) L 41 disposed as closest to the object and shaped with a concave surface to the image, a negative lens (negative meniscus lens: rear lens) L 43 disposed as closest to the image and shaped with a concave surface to the object, and a negative lens L 42 of a biconcave shape disposed between these front lens L 41 and rear lens L 43 , but the function thereof is the same.
  • a negative lens negative meniscus lens: front lens
  • a negative lens negative meniscus lens: rear lens
  • the fifth lens group G 5 is different from that in the first embodiment in that the fifth lens group G 5 is composed of two positive lenses (positive meniscus lenses) L 50 , L 51 each shaped with a convex surface to the image, a positive lens L 52 of a biconvex shape, a positive lens (positive lens of a biconvex shape: first positive lens) L 53 shaped with a convex surface to the image, a negative lens L 54 of a biconvex shape, a positive lens (positive lens of a biconvex shape: second positive lens) L 55 shaped with a convex surface to the object, a positive lens (positive lens of a biconvex shape) L 56 shaped with a convex surface to the object, a positive lens (positive meniscus lens) L 57 shaped with a convex surface to the image, a negative lens L 58 of a biconcave shape, and a positive lens (positive meniscus lens) L 59 shaped with a conve
  • the aperture stop AS is disposed between the image-side concave surface of the front lens L 41 and the object-side concave surface of the rear lens L 43 in the fourth lens group G 4 .
  • the present embodiment is so arranged that the first positive lens L 53 in the fifth lens group G 5 has the convex surface opposed to the negative biconcave lens L 54 and the other lens surface on the opposite side to the negative lens L 54 is also a convex surface and that the second positive lens L 55 in the fifth lens group has the convex surface opposed to the negative biconcave lens L 54 and the other lens surface on the opposite side to the negative lens L 54 is also the convex surface, higher-order spherical aberration can be prevented from appearing with an increase of numerical aperture.
  • the present embodiment is so arranged that the second positive lens L 55 in the fifth lens group has the convex surface opposed to the negative biconcave lens L 54 and the other lens surface on the opposite side to the negative lens L 54 is also the convex surface, the higher-order spherical aberration can be prevented from appearing with an increase of numerical aperture. Further, spherical aberration and astigmatism is corrected in the present embodiment by arranging the positive lens L 57 with the convex surface to the image, the negative lens L 58 of the biconcave shape, and the positive lens L 59 with the convex surface to the object near the image plane.
  • the first and second lens groups G 1 , G 2 and the fourth lens group G 4 in the second embodiment achieve the same functions as those in the first embodiment as described above.
  • the lens arrangement of the third embodiment shown in Fig. 5 is similar to that of the first embodiment as shown in Fig. 3 and described previously.
  • the third lens group G 3 in the third embodiment is different from that of the first embodiment in that the third lens group G 3 is composed of two positive lenses (positive meniscus lenses) L 31 , L 32 each shaped with a convex surface to the image, a positive lens (positive lens of a biconvex shape) L 33 , a positive lens (positive meniscus lens) L 34 shaped with a convex surface to the object, and two positive lenses (positive meniscus lenses) L 35 , L 36 each shaped with a convex surface to the object in order from the object side.
  • the fourth lens group is also different from that of the first embodiment in that the fourth lens group G 4 has a negative lens (negative meniscus lens: front lens) L 41 disposed as closest to the object and shaped with a concave surface to the image, a negative lens (negative meniscus lens: rear lens) L 43 arranged as closest to the image and shaped with a concave surface to the object, and a negative lens L 42 of a biconcave shape disposed between these front lens L 41 and rear lens L 43 .
  • a negative lens negative meniscus lens: front lens
  • a negative lens negative meniscus lens: rear lens
  • the fifth lens group G 5 in the third embodiment has a positive meniscus lens L 50 shaped with a convex surface to the image, two positive lenses (positive lenses of biconvex shape) L 51 , L 52 each shaped with a convex surface to the image, a positive lens (positive lens of a biconvex shape: first positive lens) L 53 shaped with a convex surface to the image, a negative lens L 54 of a biconcave shape, a positive lens (positive meniscus lens: second positive tens) L 55 shaped with a convex surface to the object, a positive lens (positive lens of a biconvex shape) L 56 shaped with a convex surface to the object, a positive lens (positive meniscus lens) L 57 shaped with a convex surface to the image, a negative lens L 58 of a biconcave shape, and a positive lens (positive meniscus lens) L 59 shaped with a convex surface to the object in order from the object side.
  • the aperture stop AS is disposed between the image-side concave surface of the front lens L 41 and the object-side concave surface of the rear lens L 43 in the fourth lens group G 4 .
  • the present embodiment is so arranged that the first positive lens L 53 in the fifth lens group G 5 has a convex surface opposed to the negative biconcave lens L 54 and the other lens surface on the opposite side to the negative lens L 54 is also a convex surface, the higher-order spherical aberration can be prevented from arising with an increase of numerical aperture.
  • the first to fourth lens groups G 1 to G 4 in the present embodiment have the same functions as those in the first embodiment as described previously.
  • the lens arrangement of the fourth embodiment shown in Fig. 6 is similar to that of the first embodiment as shown in Fig. 3 and described previously.
  • the first lens group G 1 in the fourth embodiment is different from that in the first embodiment in that the first lens group G 1 is composed of a positive lens (positive meniscus lens) L 11 shaped with a convex surface to the image, a negative lens (negative lens of a biconcave shape) L 12 shaped with a concave surface to the object, a positive lens (positive lens of a biconvex shape) L 13 shaped with a convex surface to the object, and a positive lens L 14 of a biconvex shape in order from the object side.
  • the fourth lens group in the fourth embodiment is different from that in the first embodiment in that the fourth lens group G 4 has a negative lens (negative meniscus lens: front lens) L 41 disposed as closest to the object and shaped with a concave surface to the image, a negative lens (negative meniscus lens: rear lens) L 43 disposed as closest to the image and shaped with a concave surface to the object, and a negative lens L 42 of a biconcave shape disposed between these front lens L 41 and rear lens L 43 .
  • the aperture stop AS is disposed between the image-side concave surface of the front lens L 41 and the object-side concave surface of the rear lens L 43 in the fourth lens group G 4 .
  • the first lens group G 1 in the present embodiment is so arranged that the image-side convex surface of the positive meniscus lens L 11 and the object-side concave surface of the negative biconcave lens L 12 have nearly equal curvatures and are arranged as relatively close to each other and that the image-side concave surface of the negative biconcave lens L 12 and the object-side convex surface of the positive biconvex lens L 13 have nearly equal curvatures and are arranged as relatively close to each other.
  • higher-order distortion is corrected in each set of the lens surfaces arranged as close to each other.
  • the first positive lens L 53 in the fifth lens group G 5 is arranged to have a convex surface opposed to the negative biconcave lens L 54 and the other lens surface on the opposite side to the negative lens L 54 is also a convex surface, the higher-order spherical aberration can be prevented from appearing with an increase of numerical aperture.
  • the second to fourth lens groups G 2 -G 4 in the fourth embodiment achieve the same functions as in the first embodiment described previously.
  • left-end numerals represent orders from the object side (reticle R side).
  • the lens surface of No. 1 represents an object-side surface of the lens L 11
  • the lens surface of No. 2 represents an image-side surface of the lens L 11
  • the lens surface of No. 3 represents an object-side surface of the lens L 12 .
  • r radii of curvatures of lens surfaces, d separations between lens surfaces, n refractive indices of glass materials for exposure wavelength ⁇ of 365 nm, d 0 the distance along the optical axis from the first object (reticle R) to the lens surface (first lens surface) closest to the object (reticle R) in the first lens group G 1 , ⁇ the projection magnification of projection optical system, Bf the distance along the optical axis from the lens surface closest to the image (wafer W) in the fifth lens group G 5 to the image plane (wafer W plane), NA the numerical aperture on the image side (wafer W side), of projection optical system, and L the object-to-image distance from the object plane P1 (reticle R plane) to the image plane P2 (wafer W plane).
  • f 1 represents the focal length of the first lens group G 1
  • f 2 is the focal length of the second lens group G 2
  • f 3 is the focal length of the third lens group G 3
  • f 4 is the focal length of the fourth lens group G 4
  • f 5 is the focal length of the fifth lens group G 5
  • f 1-3 is the composite focal length of the first lens group G 1 to the third lens group G 3
  • f 4-5 is the composite focal length of the fourth lens group G 4 and the fifth lens group G 5
  • I is the axial distance from the first object (reticle) to the first-object-side focal point F of the entire projection optical system (provided that the first-object-side focal point F of the entire projection optical system means an intersecting point of emergent light with the optical axis when parallel light in the paraxial region with respect to the optical axis of the projection optical system is made incident from the second object side of the projection optical system and the light in the paraxial region is emergent from the projection optical system),
  • the projection optical systems according to the embodiments achieved satisfactory telecentricity on the object side (reticle R side) and an the image side (wafer W side) as securing the wide exposure areas and relatively large numerical apertures.
  • Fig. 7 to Fig. 10 are aberration diagrams to show aberrations in the first to fourth embodiments.
  • NA represents the numerical aperture of the projection optical system
  • Y the image height
  • the dashed line represents the meridional image surface and the solid line the sagittal image surface.
  • the above-described embodiments showed the examples using the mercury lamp as a light source for supplying the exposure light of the i-line (365 nm), but it is needless to mention that the invention is not limited to the examples; for example, the invention may employ light sources including a mercury lamp supplying the exposure light of the g-line (435 nm), and extreme ultraviolet light sources such as excimer lasers supplying light of 193 nm or 248 nm.
  • the lenses constituting the projection optical system are not cemented to each other, which can avoid a problem of a change of cemented surfaces with time.
  • the lenses constituting the projection optical system are made of a plurality of optic materials, they may be made of a single glass material, for example quartz (SiO 2 ) if the wavelength region of the light source is not a wide band.
  • the present invention can realize high-performance projection optical systems having relatively large numerical apertures and achieving the bitelecentricity and superior correction of aberrations in a very wide exposure area.
  • the present invention can achieve high-performance projection optical systems well corrected for distortion throughout a very wide exposure area.
EP95111070A 1995-03-15 1995-07-14 Appareil d'exposition Withdrawn EP0732605A3 (fr)

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JP05597995A JP3819048B2 (ja) 1995-03-15 1995-03-15 投影光学系及びそれを備えた露光装置並びに露光方法

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US5194893A (en) 1991-03-06 1993-03-16 Nikon Corporation Exposure method and projection exposure apparatus
JPH05173065A (ja) 1991-10-24 1993-07-13 Olympus Optical Co Ltd 縮小投影レンズ
US5333035A (en) 1992-05-15 1994-07-26 Nikon Corporation Exposing method
US5365051A (en) 1992-07-20 1994-11-15 Nikon Corporation Projection exposure apparatus
JPH0755979A (ja) 1993-08-12 1995-03-03 Toshiba Corp 原子炉格納容器

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930049A (en) * 1996-10-01 1999-07-27 Nikon Corporation Projection optical system and method of using such system for manufacturing devices
EP0877271A3 (fr) * 1997-04-25 1998-12-09 Nikon Corporation Système optique de projection et méthode pour fabriquer des dispositifs à l'aide de ce système
US6008884A (en) * 1997-04-25 1999-12-28 Nikon Corporation Projection lens system and apparatus
EP0877271A2 (fr) * 1997-04-25 1998-11-11 Nikon Corporation Système optique de projection et méthode pour fabriquer des dispositifs à l'aide de ce système
US6333781B1 (en) 1997-07-24 2001-12-25 Nikon Corporation Projection optical system and exposure apparatus and method
US6700645B1 (en) 1998-01-22 2004-03-02 Nikon Corporation Projection optical system and exposure apparatus and method
US6259508B1 (en) 1998-01-22 2001-07-10 Nikon Corporation Projection optical system and exposure apparatus and method
EP1686405A1 (fr) 1998-11-30 2006-08-02 Carl Zeiss SMT AG Objectif de réduction microlithographique comprenant cinq groupes de lentilles
US6806942B2 (en) 2002-05-14 2004-10-19 Carl Zeiss Smt Ag Projection exposure system
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
CN109581622A (zh) * 2017-09-29 2019-04-05 上海微电子装备（集团）股份有限公司 一种投影物镜
US10983442B2 (en) 2017-09-29 2021-04-20 Shanghai Micro Electronics Equipment (Group) Co., Ltd. Projection objective

Also Published As

Publication number Publication date
JP3819048B2 (ja) 2006-09-06
EP1310818A2 (fr) 2003-05-14
KR960035158A (ko) 1996-10-24
JPH08254652A (ja) 1996-10-01
KR100380267B1 (ko) 2003-11-05
EP0732605A3 (fr) 1997-10-08
EP1310818A3 (fr) 2005-02-02
US6084723A (en) 2000-07-04

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